Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11551) > Сторінка 129 з 193
| Фото | Назва | Виробник | Інформація |
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1N5339CE3/TR8 | Microsemi Corporation |
 Description: DIODE ZENER 5.6V 5W T18Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
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1N5339E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.6V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
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2N3251A | Microsemi Corporation |
Description: TRANS PNP 60V 0.2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
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JANTX2N3251A | Microsemi Corporation |
Description: TRANS PNP 60V 0.2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/323 |
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JAN2N3251A | Microsemi Corporation |
Description: TRANS PNP 60V 0.2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Qualification: MIL-PRF-19500/323 |
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JAN2N3251AUB | Microsemi Corporation |
Description: TRANS PNP 60V 0.2A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Supplier Device Package: UB Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
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JANTXV2N3251AUB | Microsemi Corporation |
Description: TRANS PNP 60V 0.2A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Supplier Device Package: UB Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
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2N3251AUB | Microsemi Corporation |
Description: TRANS PNP 60V 0.2A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Supplier Device Package: UB Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
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JANTXV2N3251A | Microsemi Corporation |
Description: TRANS PNP 60V 0.2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
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A42MX16-1TQ176 | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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A42MX16-1TQ176M | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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A42MX16-1TQ176I | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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| APTGF530U120D4G | Microsemi Corporation | Description: IGBT MODULE 1200V 700A 3900W D4 |
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| APTGT450DU60G | Microsemi Corporation |
Description: IGBT MODULE 600V 550A 1750W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 550 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1750 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
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| APTGT580U60D4G | Microsemi Corporation |
Description: IGBT MODULE 600V 760A 1600W D4 |
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| DME800 | Microsemi Corporation |
Description: RF TRANS NPN 65V 1.15GHZ 55ST-1 |
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1.5KE39CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 33.3VWM 53.9VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 28A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: CASE-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
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SMAJ440CAe3/TR13 | Microsemi Corporation |
Description: TVS DIODE 440VWM DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 440V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Power - Peak Pulse: 500W Power Line Protection: No |
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| MAX24188EVKIT# | Microsemi Corporation |
Description: KIT EVALUATION MAX24188 |
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| IPS1010-WP | Microsemi Corporation | Description: POE PSE CONTROLLER |
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P6KE27AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 23.1VWM 37.5VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 23.1V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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| PD70200EVB25B | Microsemi Corporation |
Description: POE PD MODULE |
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1N5383/TR12 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383A/TR12 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383AE3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383AE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383B/TR12 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383BE3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383BE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383C/TR12 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383CE3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383E3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383/TR8 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383A/TR8 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383AE3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383B/TR8 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383BE3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383C/TR8 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383CE3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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1N5383E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 150V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 108 V |
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SMDA15C-7 | Microsemi Corporation |
Description: TVS DIODE 15VWM 30VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 70pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: 8-SO Bidirectional Channels: 7 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 30V Power - Peak Pulse: 300W Power Line Protection: No |
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1.5KE24AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 20.5VWM 33.2VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 45A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
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| MDS500L | Microsemi Corporation |
Description: RF TRANS NPN 70V 1.09GHZ 55ST Packaging: Bulk Package / Case: 55ST Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 9.2dB Power - Max: 833W Current - Collector (Ic) (Max): 24A Voltage - Collector Emitter Breakdown (Max): 70V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Frequency - Transition: 1.03GHz ~ 1.09GHz Supplier Device Package: 55ST Part Status: Obsolete |
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1.5KE75AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 64.1VWM 103VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 14.6A Voltage - Reverse Standoff (Typ): 64.1V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.3V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
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PD02B104 | Microsemi Corporation |
Description: DISPLAY PLASMA GRAPHIC 128X64MOD Packaging: Box Display Type: Plasma Backlight: Without Backlight Interface: Serial Viewing Area: 129.54mm W x 64.52mm H Dot Pixels: 64 x 128 Background Color: Gray Graphics Color: Orange |
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PD02D104 | Microsemi Corporation |
Description: DISPLAY PLASMA GRAPHIC 128X64MOD |
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JANTX1N4977CUS | Microsemi Corporation |
Description: DIODE ZENER 62V 5W D5B Tolerance: ±2% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 42 Ohms Supplier Device Package: D-5B Grade: Military Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 47.1 V Qualification: MIL-PRF-19500/435 |
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APT30N60KC6 | Microsemi Corporation |
Description: MOSFET N-CH 600V 30A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 960µA Supplier Device Package: TO-220 [K] Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V |
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APT30N60SC6 | Microsemi Corporation |
Description: MOSFET N-CH 600V 30A D3PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 960µA Supplier Device Package: D3Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V |
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APT11N80KC3G | Microsemi Corporation |
Description: MOSFET N-CH 800V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 680µA Supplier Device Package: TO-220 [K] Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V |
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A42MX16-2TQ176 | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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A42MX16-2TQ176I | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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A42MX16-3TQ176 | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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A42MX16-3TQ176I | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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A42MX16-FTQ176 | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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A42MX16-TQ176 | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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A42MX16-TQ176A | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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A42MX16-TQ176I | Microsemi Corporation |
Description: IC FPGA 140 I/O 176TQFP Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Number of Gates: 24000 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Supplier Device Package: 176-TQFP (24x24) Part Status: Obsolete Number of I/O: 140 DigiKey Programmable: Not Verified |
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| 1N5339CE3/TR8 |
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Виробник: Microsemi Corporation
Description: DIODE ZENER 5.6V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
товар відсутній
| 1N5339E3/TR8 |
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Виробник: Microsemi Corporation
Description: DIODE ZENER 5.6V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
товар відсутній
| 2N3251A |
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Виробник: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товар відсутній
| JANTX2N3251A |
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Виробник: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/323
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/323
товар відсутній
| JAN2N3251A |
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Виробник: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/323
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/323
товар відсутній
| JAN2N3251AUB |
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Виробник: Microsemi Corporation
Description: TRANS PNP 60V 0.2A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: UB
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Description: TRANS PNP 60V 0.2A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: UB
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товар відсутній
| JANTXV2N3251AUB |
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Виробник: Microsemi Corporation
Description: TRANS PNP 60V 0.2A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: UB
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Description: TRANS PNP 60V 0.2A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: UB
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товар відсутній
| 2N3251AUB |
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Виробник: Microsemi Corporation
Description: TRANS PNP 60V 0.2A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: UB
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Description: TRANS PNP 60V 0.2A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: UB
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товар відсутній
| JANTXV2N3251A |
Виробник: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товар відсутній
| A42MX16-1TQ176 |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| A42MX16-1TQ176M |
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Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| A42MX16-1TQ176I |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| APTGF530U120D4G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 700A 3900W D4
Description: IGBT MODULE 1200V 700A 3900W D4
товар відсутній
| APTGT450DU60G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 550A 1750W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1750 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MODULE 600V 550A 1750W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1750 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товар відсутній
| APTGT580U60D4G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 760A 1600W D4
Description: IGBT MODULE 600V 760A 1600W D4
товар відсутній
| 1.5KE39CAE3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 33.3VWM 53.9VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 33.3VWM 53.9VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
| SMAJ440CAe3/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 440VWM DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 440VWM DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| P6KE27AE3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 23.1VWM 37.5VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 23.1VWM 37.5VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| 1N5383/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383A/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383AE3/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383AE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383B/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383BE3/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383BE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383C/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383CE3/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383CE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383E3/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383E3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383A/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383AE3/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383B/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383BE3/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383C/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383CE3/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| 1N5383E3/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 150V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
Description: DIODE ZENER 150V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 108 V
товар відсутній
| SMDA15C-7 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 15VWM 30VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SO
Bidirectional Channels: 7
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 15VWM 30VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: 8-SO
Bidirectional Channels: 7
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 300W
Power Line Protection: No
товар відсутній
| 1.5KE24AE3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 20.5VWM 33.2VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 20.5VWM 33.2VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
| MDS500L |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 70V 1.09GHZ 55ST
Packaging: Bulk
Package / Case: 55ST
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9.2dB
Power - Max: 833W
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 70V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55ST
Part Status: Obsolete
Description: RF TRANS NPN 70V 1.09GHZ 55ST
Packaging: Bulk
Package / Case: 55ST
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9.2dB
Power - Max: 833W
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 70V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55ST
Part Status: Obsolete
товар відсутній
| 1.5KE75AE3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 64.1VWM 103VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 64.1VWM 103VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
| PD02B104 |
|
Виробник: Microsemi Corporation
Description: DISPLAY PLASMA GRAPHIC 128X64MOD
Packaging: Box
Display Type: Plasma
Backlight: Without Backlight
Interface: Serial
Viewing Area: 129.54mm W x 64.52mm H
Dot Pixels: 64 x 128
Background Color: Gray
Graphics Color: Orange
Description: DISPLAY PLASMA GRAPHIC 128X64MOD
Packaging: Box
Display Type: Plasma
Backlight: Without Backlight
Interface: Serial
Viewing Area: 129.54mm W x 64.52mm H
Dot Pixels: 64 x 128
Background Color: Gray
Graphics Color: Orange
товар відсутній
| PD02D104 |
|
Виробник: Microsemi Corporation
Description: DISPLAY PLASMA GRAPHIC 128X64MOD
Description: DISPLAY PLASMA GRAPHIC 128X64MOD
товар відсутній
| JANTX1N4977CUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 62V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: D-5B
Grade: Military
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 47.1 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 62V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: D-5B
Grade: Military
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 47.1 V
Qualification: MIL-PRF-19500/435
товар відсутній
| APT30N60KC6 |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 600V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: TO-220 [K]
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: TO-220 [K]
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
товар відсутній
| APT30N60SC6 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 600V 30A D3PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: D3Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
Description: MOSFET N-CH 600V 30A D3PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: D3Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
товар відсутній
| APT11N80KC3G |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 800V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: TO-220 [K]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
Description: MOSFET N-CH 800V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: TO-220 [K]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
товар відсутній
| A42MX16-2TQ176 |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| A42MX16-2TQ176I |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| A42MX16-3TQ176 |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| A42MX16-3TQ176I |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| A42MX16-FTQ176 |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| A42MX16-TQ176 |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| A42MX16-TQ176A |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній
| A42MX16-TQ176I |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176TQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Number of Gates: 24000
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 176-TQFP (24x24)
Part Status: Obsolete
Number of I/O: 140
DigiKey Programmable: Not Verified
товар відсутній