Продукція > GT0
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| GT025N06D5 | Goford Semiconductor | Description: N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| GT025N06D5 | Goford Semiconductor | Description: N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V | на замовлення 4759 шт: термін постачання 21-31 дні (днів) |
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| GT025N06F | Goford Semiconductor | Description: MOSFET,N-CH,60V,120A,55W,TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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| GT025N06M | Goford Semiconductor | Description: MOSFET,N-CH,60V,170A,215W,TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | товару немає в наявності | Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| GT025N06M | Goford Semiconductor | Description: MOSFET,N-CH,60V,170A,215W,TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | на замовлення 148 шт: термін постачання 21-31 дні (днів) |
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| GT025N06TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 200A; 230W; TOLL Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 230W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 101nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT025N06TL | Goford Semiconductor | Description: MOSFET N-CH 60V 200A 230W TOLL-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 30 V | товару немає в наявності | Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
| GT025N06TL | Goford Semiconductor | Description: MOSFET N-CH 60V 200A 230W TOLL-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 30 V | на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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| GT03-111-034-B | ICE Components | Pulse Transformers SMT Gate Driver Transformer 1:1:1 | на замовлення 74 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT03-111-052-A | ICE Components | Pulse Transformers Gate Drive Transformer | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
| GT03-111-069-B | ICE Components | Pulse Transformers SMT Gate Driver Transformer 1:1:1 | на замовлення 1662 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT03-111-110-A | ICE Components | Pulse Transformers SMT Gate Driver Transformer 1:1:1 | на замовлення 618 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT03-122-055-A | ICE Components | Pulse Transformers SMT Gate Driver Xfmr 1:2.5:2.5 | товару немає в наявності | Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
| GT0300-17M000 | NMB Technologies Corporation | Description: HYBRID 17 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 1.654" x 1.654" (42.00mm x 42.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.06° Torque - Holding (oz-in / mNm): 212.44 / 1500 Coil Type: Unipolar Diameter - Shaft: 0.236" (6.00mm) Mounting Hole Spacing: 1.220" (31.00mm) Length - Shaft and Bearing: 0.787" (20.00mm) NEMA Frame Size: 17 Current Rating (Amps): 1 A Coil Resistance: 3.1 Ohms Steps per Revolution: 6000.0 | товару немає в наявності | Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| GT0300-23M201 | NMB Technologies Corporation | Description: HYBRID 23 STEP MOTOR LOW BACKLAS Features: Flatted Shaft Packaging: Bulk Voltage - Rated: 24VDC Size / Dimension: Square - 2.362" x 2.362" (60.00mm x 60.00mm) Type: Hybrid Gear Motor Operating Temperature: -10°C ~ 50°C Termination Style: Wire Leads Step Angle: 0.06° Torque - Holding (oz-in / mNm): 566.57 / 4000 Coil Type: Unipolar Diameter - Shaft: 0.315" (8.00mm) Mounting Hole Spacing: 1.949" (49.50mm) Length - Shaft and Bearing: 1.260" (32.00mm) NEMA Frame Size: 24 Current Rating (Amps): 900 mA Coil Resistance: 5.8 Ohms Steps per Revolution: 6000.0 | товару немає в наявності | Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| GT030N08T | Goford Semiconductor | Description: N85V,200A,RD<3.0M@10V,VTH2.0V~4. Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5822 pF @ 50 V | на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| GT030PCM32-ARP-120 | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR RECPT 120 AMPS 4 AWG | товару немає в наявності | Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
| GT030PCM32-ARP-80 | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR RECPT 80 AMPS 4-6 AWG | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT030PCM32-ARP-80 | Amphenol Industrial Operations | Description: CONN RCPT MALE 4POS SILVER SCREW | товару немає в наявності | Мінімальне замовлення: 47 шт В кошику од. на суму грн. | ||||||||||||||
| GT0312-90 | Ondrives.US Corp | Description: SHAFT, 0.0312 DIA. X 9IN LG Packaging: Bulk Type: Shaft, Ground Specifications: 0.031" Dia x 9.000" L (0.78mm x 228.60mm) Part Status: Active | на замовлення 83 шт: термін постачання 21-31 дні (днів) |
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| GT035N06T | Goford Semiconductor | Description: N-CH, 60V,170A, RD(MAX)<3.5M@10V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5064 pF @ 30 V | на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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| GT035N06T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 170A; 215W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 170A Power dissipation: 215W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 70nC Kind of channel: enhancement Technology: SGT | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT035N10M | Goford Semiconductor | Description: N100V, 190A,RD<3.5M@10V,VTH2V~4V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6188 pF @ 50 V | товару немає в наявності | Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| GT035N10M | Goford Semiconductor | Description: N100V, 190A,RD<3.5M@10V,VTH2V~4V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6188 pF @ 50 V | на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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| GT035N10Q | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 190A; Idm: 760A; 250W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 100V Drain current: 190A Pulsed drain current: 760A Power dissipation: 250W Case: TO247 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 68nC Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT035N10Q | Goford Semiconductor | Description: MOSFET N-CH 100V 190A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6516 pF @ 50 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT035N10T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 190A; Idm: 760A; 250W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 100V Drain current: 190A Pulsed drain current: 760A Power dissipation: 250W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 68nC Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT035N10T | Goford Semiconductor | Description: N100V,190A,RD<3.5M@10V,VTH2.0V~4 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6057 pF @ 50 V | на замовлення 44 шт: термін постачання 21-31 дні (днів) |
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| GT035N12T | Goford Semiconductor | Description: MOSFET N-CH 120V 180A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8336 pF @ 60 V | на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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| GT038P06M | Goford Semiconductor | Description: MOSFET P-CH 60V 200A 350W TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 386 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11988 pF @ 30 V | товару немає в наявності | Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| GT038P06M | Goford Semiconductor | Description: MOSFET P-CH 60V 200A 350W TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 386 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11988 pF @ 30 V | на замовлення 599 шт: термін постачання 21-31 дні (днів) |
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| GT04-111-063-A | ICE Components, Inc. | Description: THT GATE DRIVE TRANSFORMER Packaging: Tray Inductance: 247µH Size / Dimension: 0.810" L x 0.480" W (20.57mm x 12.19mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 155°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 63VµS Height - Seated (Max): 0.750" (19.05mm) | на замовлення 242 шт: термін постачання 21-31 дні (днів) |
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| GT04-111-063-B | ICE Components | Pulse Transformers Gate Drive Transformer | на замовлення 8515 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT04-111-126-A | ICE Components | Pulse Transformers Gate Drive Transformer | на замовлення 1811 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT04-111-126-A | ICE Components, Inc. | Description: THT GATE DRIVE TRANSFORMER Packaging: Tray Inductance: 990µH Size / Dimension: 0.810" L x 0.480" W (20.57mm x 12.19mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 155°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 126VµS Height - Seated (Max): 0.750" (19.05mm) | на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| GT04-111-126-B | ICE Components | Pulse Transformers Gate Drive Transformer | на замовлення 987 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT04-111-189-A | ICE Components | Pulse Transformers Gate Drive Transformer | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT04-111-252-A | ICE Components | Pulse Transformers Gate Drive Transformer | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT04-111-252-A | ICE Components, Inc. | Description: THT GATE DRIVE TRANSFORMER Packaging: Tray Inductance: 3.96mH Size / Dimension: 0.810" L x 0.480" W (20.57mm x 12.19mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 155°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 252VµS Height - Seated (Max): 0.750" (19.05mm) | на замовлення 482 шт: термін постачання 21-31 дні (днів) |
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| GT04-111-252-B | ICE Components | Pulse Transformers Gate Drive Transformer | на замовлення 769 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT04-111-315-A | ICE Components | Pulse Transformers Gate Drive Transformer | товару немає в наявності | Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
| GT04-111-315-B | ICE Components | Pulse Transformers Gate Drive Transformer | на замовлення 781 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT04-111-378-A | ICE Components, Inc. | Description: THT GATE DRIVE TRANSFORMER Packaging: Tray Inductance: 8.91mH Size / Dimension: 0.810" L x 0.480" W (20.57mm x 12.19mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 155°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 378VµS Height - Seated (Max): 0.750" (19.05mm) | на замовлення 187 шт: термін постачання 21-31 дні (днів) |
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| GT04-111-378-A | ICE Components | Pulse Transformers Gate Drive Transformer | на замовлення 509 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT04-111-378-B | ICE Components | Pulse Transformers Gate Drive Transformer | на замовлення 202 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT04-122-252-A | ICE Components | Pulse Transformers Gate Drive Transformer | товару немає в наявності | Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
| GT04-122-378-A | ICE Components | Pulse Transformers Gate Drive Transformer | товару немає в наявності | Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
| GT040N04D5I | Goford Semiconductor | Description: N40V,110A,RD<3.5M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2298 pF @ 20 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| GT040N04M | Goford Semiconductor | Description: MOSFET,N-CH,40V,120A,82W,TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V | товару немає в наявності | Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| GT040N04M | Goford Semiconductor | Description: MOSFET,N-CH,40V,120A,82W,TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V | на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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| GT040N04T | Goford Semiconductor | Description: MOSFET N-CH 40V 120A 96W 4M(MAX) Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2794 pF @ 20 V | на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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| GT040N04T | Goford Semiconductor | Description: MOSFET,N-CH,40V,110A,87W,TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 87W Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| GT040N04TI | Goford Semiconductor | Description: N40V, 110A,RD<4M@10V,VTH1.0V~2.5 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 20 V | на замовлення 1 шт: термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT040N10M | Goford Semiconductor | Description: MOSFET N-CH 100V 140A 200W TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V | товару немає в наявності | Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| GT040N10M | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 140A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 200W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 0.1µC Kind of channel: enhancement Technology: SGT | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT040N10M | Goford Semiconductor | Description: MOSFET N-CH 100V 140A 200W TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V | на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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| GT040N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 140A 200W 4.5m Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| GT040N10T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 140A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 0.1µC Kind of channel: enhancement Technology: SGT Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT0410EM | FAIRCHIL.. | 09+ SOP14 | на замовлення 1758 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT0416A | Marathon Motors | Description: MOTOR 7.5HP 1750RPM 213JM DPPE 3 | на замовлення 1 шт: термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT042P06T | Goford Semiconductor | Description: MOSFET P-CH 60V 160A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V FET Feature: Standard Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT042P06T | GOFORD Semiconductor | P-Channel Enhancement Mode Power MOSFET | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| GT042P06T | Goford Semiconductor | Description: MOSFET, P-CH,-60V,-160A,RD(MAX)< Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V FET Feature: Standard Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9151 pF @ 30 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT042P06T | GOFORD Semiconductor | P-Channel Enhancement Mode Power MOSFET | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| GT043N15F | Goford Semiconductor | Description: MOSFET 150V 95A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V | на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| GT043N15M | Goford Semiconductor | Description: MOSFET,N-CH,150V,143A,275W,TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Power Dissipation (Max): 275W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 75 V | на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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| GT043N15M | Goford Semiconductor | Description: MOSFET,N-CH,150V,143A,275W,TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Power Dissipation (Max): 275W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 75 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT043N15Q | Goford Semiconductor | Description: MOSFET 150V 180A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V | на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| GT043N15T | Goford Semiconductor | Description: MOSFET 150V 143A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V Power Dissipation (Max): 275W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V | на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| GT043N15TL | Goford Semiconductor | Description: MOSFET,N-CH,150V,202A,350W,TOLL- Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 75 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT043N15TL | Goford Semiconductor | Description: MOSFET,N-CH,150V,202A,350W,TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 75 V | на замовлення 185 шт: термін постачання 21-31 дні (днів) | Мінімальне замовлення: 185 шт В кошику од. на суму грн. | ||||||||||||||
| GT045N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 120A DFN5*6-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V | на замовлення 4447 шт: термін постачання 21-31 дні (днів) |
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| GT045N10D5 | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; DFN5x6-8 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 180W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 78nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT045N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 120A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4217 pF @ 50 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| GT045N10M | Goford Semiconductor | Description: N100V, 120A,RD<4.5M@10V,VTH2V~4V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4198 pF @ 50 V | товару немає в наявності | Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| GT045N10M | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; TO263 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 180W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 81nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT045N10M | Goford Semiconductor | Description: MOSFET N-CH 100V 120A TO-263 | на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| GT045N10M | Goford Semiconductor | Description: N100V, 120A,RD<4.5M@10V,VTH2V~4V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4198 pF @ 50 V | на замовлення 258 шт: термін постачання 21-31 дні (днів) |
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| GT045N10Q | Goford Semiconductor | Description: MOSFET N-CH 100V 145A 208W TO-24 | на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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| GT045N10Q | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 145A; 208W; TO247 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 145A Power dissipation: 208W Case: TO247 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 78nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT045N10Q | Goford Semiconductor | Description: MOSFET,N-CH,100V,145A,208W,TO-24 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 208W Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V | на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| GT045N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 120A 180W 4.5m( Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6094 pF @ 50 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| GT045N10T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 120A; 180W; TO220 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 180W Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 78nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT045N10T | Goford Semiconductor | Description: N100V, 150A,RD<4.8M@10V,VTH2V~4V | на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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| GT0468-60 | Ondrives.US Corp | Description: SHAFT, 0.0468 DIA. X 6IN LG Packaging: Bulk Type: Shaft, Ground Specifications: 0.046" Dia x 6.000" L (1.18mm x 152.40mm) Part Status: Active | на замовлення 44 шт: термін постачання 21-31 дні (днів) |
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| GT048N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 110A 150W 4.8M Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V | на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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| GT05-14S | Amphenol Industrial | Circular MIL Spec Tools, Hardware & Accessories Dummy Rcpt 14S Shell Rvs Bay Cpling Conn | на замовлення 44 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GT05-20(025) | Amphenol Industrial | Circular MIL Spec Tools, Hardware & Accessories Dummy Receptacle | товару немає в наявності | Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
| GT05-20(025) | Amphenol Industrial Operations | Description: DUMMYRECEPT Packaging: Bulk | товару немає в наявності | Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
| GT055N06D5 | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W DFN5*6-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| GT055N06D5 | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W DFN5*6-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | на замовлення 1960 шт: термін постачання 21-31 дні (днів) |
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| GT055N06K | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| GT055N06K | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | на замовлення 254 шт: термін постачання 21-31 дні (днів) |
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| GT055N06K | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 90A; 78W; TO252 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 30nC Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT055N06M | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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| GT055N06M | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | товару немає в наявності | Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| GT055N06M | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 90A; 78W; TO263 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 30nC Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT055N06M | Goford Semiconductor | Description: MOSFET,N-CH,60V,90A,78W,TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V Power Dissipation (Max): 78W Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V | на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| GT055N06T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 90A; 78W; TO220 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 30nC Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GT055N06T | Goford Semiconductor | Description: MOSFET N-CH 60V 90A 78W TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V | на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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