Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (32043) > Сторінка 113 з 535
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IP4294CZ10-TBR,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 4.1V DFN2510A10Packaging: Tape & Reel (TR) Package / Case: 10-XFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: DFN2510A-10 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 4.1V Power Line Protection: Yes |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NX3020NAK,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 200MA TO236ABDrive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) FET Type: N-Channel |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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NX7002AK,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 190MA TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 265mW (Ta), 1.33W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NX7002AKS,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 0.17A 6TSSOPPart Status: Active Supplier Device Package: 6-TSSOP Vgs(th) (Max) @ Id: 2.1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Current - Continuous Drain (Id) @ 25°C: 170mA Drain to Source Voltage (Vdss): 60V Power - Max: 220mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NX7002AKW,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 170MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 220mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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PBSM5240PFH,115 | Nexperia USA Inc. |
Description: TRANS PNP/N CH 40V 1.8A 6HUSONPackaging: Tape & Reel (TR) Voltage - Rated: 40V PNP, 30V N-Channel Package / Case: 6-UFDFN Exposed Pad Current Rating (Amps): 1.8A PNP, 660mA N-Channel Mounting Type: Surface Mount Transistor Type: PNP, N-Channel Applications: General Purpose Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PBSS2540MB,315 | Nexperia USA Inc. |
Description: TRANS NPN 40V 0.5A DFN1006B-3Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: DFN1006B-3 Frequency - Transition: 450MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Current - Collector Cutoff (Max): 100µA (ICBO) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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PBSS3515MB,315 | Nexperia USA Inc. |
Description: TRANS PNP 15V 0.5A DFN1006B-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 280MHz Supplier Device Package: DFN1006B-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD12VV1BL,315 | Nexperia USA Inc. |
Description: TVS DIODE 12VWM 38VC DFN1006-2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 17pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.8A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.6V Voltage - Clamping (Max) @ Ipp: 38V Power - Peak Pulse: 290W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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PESD1LVDS,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM DFN2510-10Packaging: Tape & Reel (TR) Package / Case: 10-XFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: DFN2510-10 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Power Line Protection: Yes Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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PESD36VS1UL,315 | Nexperia USA Inc. |
Description: TVS DIODE 36VWM 80VC DFN1006-2Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 80V Voltage - Breakdown (Min): 38.2V Unidirectional Channels: 1 Supplier Device Package: DFN1006-2 Voltage - Reverse Standoff (Typ): 36V (Max) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 18pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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PESD5V0L2UMB,315 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 15VC DFN1006B-3Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 15V Voltage - Breakdown (Min): 6.46V Unidirectional Channels: 2 Supplier Device Package: DFN1006B-3 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 16pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD5V0X1BCL,315 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 18VC DFN1006-2Qualification: AEC-Q101 Grade: Automotive Capacitance @ Frequency: 0.49pF @ 1MHz Operating Temperature: -65°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 18V Voltage - Breakdown (Min): 8.1V Bidirectional Channels: 1 Supplier Device Package: DFN1006-2 Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 1.7A (8/20µs) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| PH7630DLX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V LFPAK Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PMBT3904MB,315 | Nexperia USA Inc. |
Description: TRANS NPN 40V 0.2A DFN1006B-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: DFN1006B-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMC85XP,115 | Nexperia USA Inc. |
Description: MOSFET NPN/P CH 30V 2.6A 6HUSONPackaging: Tape & Reel (TR) Voltage - Rated: 30V Package / Case: 6-UFDFN Exposed Pad Current Rating (Amps): 2.6A Mounting Type: Surface Mount Transistor Type: NPN Pre-Biased, P-Channel Applications: General Purpose Supplier Device Package: 6-HUSON (2x2) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMDPB58UPE,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3.6A 6HUSONPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-HUSON (2x2) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMDPB80XP,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 2.7A 6HUSONSupplier Device Package: 6-HUSON (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate, 1.8V Drive Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2.7A Drain to Source Voltage (Vdss): 20V Power - Max: 485mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG2005EPK,315 | Nexperia USA Inc. |
Description: DIODE SCHOTT 20V 500MA DFN1608D2Current - Reverse Leakage @ Vr: 130 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1608D-2 Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 35pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 3 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG2020EPK,315 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2Current - Reverse Leakage @ Vr: 900 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 120pF @ 1V, 1MHz Qualification: AEC-Q101 Grade: Automotive Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Tape & Reel (TR) Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1608D-2 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG4010ETP,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTK 40V 1A SOD128/CFP5Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG4010ETR,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 1A SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.4 ns Technology: Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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PMEG4020ETP,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTK 40V 2A SOD128/CFP5Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 250pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG4030ETP,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTK 40V 3A SOD128/CFP5Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 350pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMEG4050ETP,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTK 40V 5A SOD128/CFP5Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 600pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG6010ETR,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 1A SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.4 ns Technology: Schottky Capacitance @ Vr, F: 120pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 60 µA @ 60 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMEG6020ETR,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.5 ns Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2 Voltage Coupled to Current - Reverse Leakage @ Vr: 60 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMEG6030ETPX | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5Current - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-128/CFP5 Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 360pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 12 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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PMFPB8032XP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.7A HUSON6Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Obsolete Supplier Device Package: 6-HUSON (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 485mW (Ta), 6.25W (Tc) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMPB11EN,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 9A DFN2020MD-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMPB20XPE,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMPB29XPE,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMPB33XP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMPB40SNA,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 12.9A 6DFNInput Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMPB47XP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 4A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMPB48EP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMZB290UN,315 | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1A DFN1006B-3Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Discontinued at Digi-Key Supplier Device Package: DFN1006B-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMZB420UN,315 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 900MA DFN1006B-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 490mOhm @ 200mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.98 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PNS40010ER,115 | Nexperia USA Inc. |
Description: DIODE GEN PURP 400V 1A SOD123WCurrent - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 147000 шт: термін постачання 21-31 дні (днів) |
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PRTR5V0U2AX/S911,2 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM SOT143BVoltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: SOT-143B Voltage - Reverse Standoff (Typ): 5.5V (Max) Capacitance @ Frequency: 1.8pF @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: Yes |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMN013-100YSEX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 82A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tj) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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PTVS17VP1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 17VWM 27.6VC SOD1285Packaging: Tape & Reel (TR) Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 27.6V Voltage - Breakdown (Min): 18.9V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 17V Current - Peak Pulse (10/1000µs): 21.7A Operating Temperature: -55°C ~ 185°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PTVS22VP1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 22VWM 35.5VC SOD1285Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 35.5V Voltage - Breakdown (Min): 24.4V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 22V Current - Peak Pulse (10/1000µs): 16.9A Operating Temperature: -55°C ~ 185°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PTVS28VP1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 28VWM 45.4VC SOD1285Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 45.4V Voltage - Breakdown (Min): 31.1V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 28V Current - Peak Pulse (10/1000µs): 13.2A Operating Temperature: -55°C ~ 185°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PTVS33VP1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 33VWM 53.3VC SOD1285Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 11.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: SOD-128/CFP5 Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PTVS36VP1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 36VWM 58.1VC SOD1285Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 10.3A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: SOD-128/CFP5 Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PTVS3V3P1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM 8V SOD128/CFP5Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 75A Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: SOD-128/CFP5 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 8V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PTVS43VP1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 43VWM 69.4VC CFP5 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PTVS5V0P1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 9.2V SOD128/CFP5Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 65.2A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-128/CFP5 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PTVS6V5P1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 6.5VWM 11.2VC SOD128Qualification: AEC-Q101 Grade: Automotive Voltage - Breakdown (Min): 7.22V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 6.5V Current - Peak Pulse (10/1000µs): 53.6A Operating Temperature: -55°C ~ 185°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 11.2V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PTVS7V5P1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 7.5VWM 12.9VC SOD128Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 12.9V Voltage - Breakdown (Min): 8.33V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 7.5V Current - Peak Pulse (10/1000µs): 46.5A Operating Temperature: -55°C ~ 185°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PTVS8V0P1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 8VWM 13.6V SOD128/CFP5Operating Temperature: -55°C ~ 185°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 13.6V Voltage - Breakdown (Min): 8.89V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 8V Current - Peak Pulse (10/1000µs): 44.1A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PUMB9,125 | Nexperia USA Inc. |
Description: TRANS PREBIAS 2PNP 50V 6-TSSOPPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Frequency - Transition: 180MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PSMN1R9-40PLQ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 150A TO220ABPart Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 467 шт: термін постачання 21-31 дні (днів) |
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PSMN3R9-60PSQ | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 130A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 4023 шт: термін постачання 21-31 дні (днів) |
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BUK7613-100E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 72A D2PAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 182W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 4881 шт: термін постачання 21-31 дні (днів) |
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BUK9611-80E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 75A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 182W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4526 шт: термін постачання 21-31 дні (днів) |
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BUK962R8-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 324W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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BUK963R1-40E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A D2PAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 69.5 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Grade: Automotive Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 234W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BUK963R3-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2386 шт: термін постачання 21-31 дні (днів) |
|
| IP4294CZ10-TBR,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 4.1V DFN2510A10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DFN2510A-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.1V
Power Line Protection: Yes
Description: TVS DIODE 5.5VWM 4.1V DFN2510A10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DFN2510A-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.1V
Power Line Protection: Yes
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NX3020NAK,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 200MA TO236AB
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Description: MOSFET N-CH 30V 200MA TO236AB
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
FET Type: N-Channel
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.62 грн |
| 6000+ | 1.43 грн |
| 9000+ | 1.37 грн |
| NX7002AK,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NX7002AKS,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 170mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 170mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.32 грн |
| NX7002AKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 170MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 220mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 170MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 220mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.13 грн |
| 6000+ | 1.82 грн |
| 9000+ | 1.71 грн |
| PBSM5240PFH,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP/N CH 40V 1.8A 6HUSON
Packaging: Tape & Reel (TR)
Voltage - Rated: 40V PNP, 30V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 1.8A PNP, 660mA N-Channel
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: TRANS PNP/N CH 40V 1.8A 6HUSON
Packaging: Tape & Reel (TR)
Voltage - Rated: 40V PNP, 30V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 1.8A PNP, 660mA N-Channel
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
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В кошику
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| PBSS2540MB,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.5A DFN1006B-3
Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: DFN1006B-3
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Qualification: AEC-Q100
Grade: Automotive
Description: TRANS NPN 40V 0.5A DFN1006B-3
Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: DFN1006B-3
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PBSS3515MB,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 15V 0.5A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 15V 0.5A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| PESD12VV1BL,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 38VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 290W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 38VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 290W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PESD1LVDS,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM DFN2510-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM DFN2510-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PESD36VS1UL,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 36VWM 80VC DFN1006-2
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 80V
Voltage - Breakdown (Min): 38.2V
Unidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 18pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TVS DIODE 36VWM 80VC DFN1006-2
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 80V
Voltage - Breakdown (Min): 38.2V
Unidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 18pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.20 грн |
| PESD5V0L2UMB,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 15VC DFN1006B-3
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.46V
Unidirectional Channels: 2
Supplier Device Package: DFN1006B-3
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 16pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TVS DIODE 5VWM 15VC DFN1006B-3
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.46V
Unidirectional Channels: 2
Supplier Device Package: DFN1006B-3
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 16pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| PESD5V0X1BCL,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 18VC DFN1006-2
Qualification: AEC-Q101
Grade: Automotive
Capacitance @ Frequency: 0.49pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 18V
Voltage - Breakdown (Min): 8.1V
Bidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.7A (8/20µs)
Description: TVS DIODE 5.5VWM 18VC DFN1006-2
Qualification: AEC-Q101
Grade: Automotive
Capacitance @ Frequency: 0.49pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 18V
Voltage - Breakdown (Min): 8.1V
Bidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.7A (8/20µs)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| PH7630DLX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V LFPAK
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 30V LFPAK
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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од. на суму грн.
| PMBT3904MB,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
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| PMC85XP,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET NPN/P CH 30V 2.6A 6HUSON
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 2.6A
Mounting Type: Surface Mount
Transistor Type: NPN Pre-Biased, P-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Description: MOSFET NPN/P CH 30V 2.6A 6HUSON
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 2.6A
Mounting Type: Surface Mount
Transistor Type: NPN Pre-Biased, P-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
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| PMDPB58UPE,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
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Мінімальне замовлення: 3000 шт
В кошику
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| PMDPB80XP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 485mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 485mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
В кошику
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| PMEG2005EPK,315 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 20V 500MA DFN1608D2
Current - Reverse Leakage @ Vr: 130 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTT 20V 500MA DFN1608D2
Current - Reverse Leakage @ Vr: 130 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Мінімальне замовлення: 8000 шт
В кошику
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| PMEG2020EPK,315 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Qualification: AEC-Q101
Grade: Automotive
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Qualification: AEC-Q101
Grade: Automotive
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
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Мінімальне замовлення: 8000 шт
В кошику
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| PMEG4010ETP,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 1A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTK 40V 1A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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Мінімальне замовлення: 3000 шт
В кошику
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| PMEG4010ETR,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.84 грн |
| 6000+ | 5.08 грн |
| 9000+ | 4.81 грн |
| 15000+ | 4.22 грн |
| 21000+ | 4.04 грн |
| 30000+ | 3.88 грн |
| PMEG4020ETP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTK 40V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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Мінімальне замовлення: 3000 шт
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| PMEG4030ETP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTK 40V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.63 грн |
| PMEG4050ETP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 5A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Description: DIODE SCHOTTK 40V 5A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
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Мінімальне замовлення: 3000 шт
В кошику
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| PMEG6010ETR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.84 грн |
| PMEG6020ETR,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.63 грн |
| PMEG6030ETPX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.19 грн |
| 9000+ | 10.22 грн |
| PMFPB8032XP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.7A HUSON6
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Description: MOSFET P-CH 20V 2.7A HUSON6
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
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| PMPB11EN,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
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| PMPB20XPE,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V
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| PMPB29XPE,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 5A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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| PMPB33XP,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| PMPB40SNA,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 12.9A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 12.9A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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| PMPB47XP,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 4A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| PMPB48EP,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| PMZB290UN,315 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
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| PMZB420UN,315 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 900MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 490mOhm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Description: MOSFET N-CH 30V 900MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 490mOhm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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| PNS40010ER,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 400V 1A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE GEN PURP 400V 1A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.85 грн |
| 6000+ | 5.10 грн |
| 9000+ | 4.82 грн |
| 15000+ | 4.23 грн |
| 21000+ | 4.06 грн |
| 30000+ | 3.89 грн |
| 75000+ | 3.47 грн |
| PRTR5V0U2AX/S911,2 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM SOT143B
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143B
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Capacitance @ Frequency: 1.8pF @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
Description: TVS DIODE 5.5VWM SOT143B
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143B
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Capacitance @ Frequency: 1.8pF @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
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| PSMN013-100YSEX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 55.53 грн |
| 3000+ | 49.80 грн |
| 4500+ | 47.93 грн |
| 7500+ | 43.01 грн |
| 10500+ | 42.93 грн |
| PTVS17VP1UTP,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 17VWM 27.6VC SOD1285
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Description: TVS DIODE 17VWM 27.6VC SOD1285
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
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Мінімальне замовлення: 3000 шт
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| PTVS22VP1UTP,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 22VWM 35.5VC SOD1285
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: TVS DIODE 22VWM 35.5VC SOD1285
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PTVS28VP1UTP,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 28VWM 45.4VC SOD1285
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 13.2A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: TVS DIODE 28VWM 45.4VC SOD1285
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 28V
Current - Peak Pulse (10/1000µs): 13.2A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PTVS33VP1UTP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 33VWM 53.3VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.40 грн |
| 6000+ | 10.03 грн |
| PTVS36VP1UTP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 36VWM 58.1VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36VWM 58.1VC SOD1285
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.21 грн |
| 6000+ | 8.99 грн |
| PTVS3V3P1UTP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 8V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 75A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 8V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 75A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.14 грн |
| 6000+ | 9.81 грн |
| PTVS43VP1UTP,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 43VWM 69.4VC CFP5
Description: TVS DIODE 43VWM 69.4VC CFP5
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PTVS5V0P1UTP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9.2V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 9.2V SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.31 грн |
| PTVS6V5P1UTP,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 6.5VWM 11.2VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 53.6A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 11.2V
Description: TVS DIODE 6.5VWM 11.2VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 53.6A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 11.2V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PTVS7V5P1UTP,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 46.5A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: TVS DIODE 7.5VWM 12.9VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 46.5A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PTVS8V0P1UTP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 8VWM 13.6V SOD128/CFP5
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 44.1A
Description: TVS DIODE 8VWM 13.6V SOD128/CFP5
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 44.1A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PUMB9,125 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PREBIAS 2PNP 50V 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.53 грн |
| PSMN1R9-40PLQ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 150A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 40V 150A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 347.16 грн |
| 10+ | 221.37 грн |
| 100+ | 157.09 грн |
| PSMN3R9-60PSQ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 130A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4023 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.31 грн |
| 10+ | 209.40 грн |
| 100+ | 171.59 грн |
| 500+ | 137.08 грн |
| 1000+ | 115.61 грн |
| 2000+ | 109.83 грн |
| BUK7613-100E,118 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 72A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 72A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 4881 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.45 грн |
| 10+ | 140.45 грн |
| 100+ | 97.25 грн |
| BUK9611-80E,118 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4526 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.90 грн |
| 10+ | 134.92 грн |
| 100+ | 93.15 грн |
| BUK962R8-60E,118 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 323.08 грн |
| 10+ | 205.66 грн |
| BUK963R1-40E,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69.5 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69.5 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BUK963R3-60E,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2386 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 282.69 грн |
| 10+ | 178.59 грн |
| 100+ | 125.44 грн |






















