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PSMN3R8-100BS,118 PSMN3R8-100BS,118 Nexperia USA Inc. PSMN3R8-100BS.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+125.85 грн
1600+113.53 грн
2400+109.93 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMNR90-30BL,118 PSMNR90-30BL,118 Nexperia USA Inc. PSMNR90-30BL.pdf Description: MOSFET N-CH 30V 120A D2PAK
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 306W (Tc)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN4R3-30BL,118 PSMN4R3-30BL,118 Nexperia USA Inc. PSMN4R3-30BL.pdf Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN022-30BL,118 PSMN022-30BL,118 Nexperia USA Inc. PSMN022-30BL.pdf Description: MOSFET N-CH 30V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
товару немає в наявності
 Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
PSMN4R5-40BS,118 PSMN4R5-40BS,118 Nexperia USA Inc. PSMN4R5-40BS.pdf Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+57.32 грн
1600+51.03 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN4R6-60BS,118 PSMN4R6-60BS,118 Nexperia USA Inc. PSMN4R6-60BS.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN4R4-80BS,118 PSMN4R4-80BS,118 Nexperia USA Inc. PSMN4R4-80BS.pdf Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+118.56 грн
1600+112.97 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN5R6-100BS,118 PSMN5R6-100BS,118 Nexperia USA Inc. PSMN5R6-100BS.pdf Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8061 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+90.93 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN013-100BS,118 PSMN013-100BS,118 Nexperia USA Inc. PSMN013-100BS.pdf Description: MOSFET N-CH 100V 68A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
на замовлення 174 шт:
термін постачання 21-31 дні (днів)
2+182.37 грн
10+113.16 грн
100+77.46 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN1R1-40BS,118 PSMN1R1-40BS,118 Nexperia USA Inc. PSMN1R1-40BS.pdf Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 2028 шт:
термін постачання 21-31 дні (днів)
1+344.92 грн
10+218.99 грн
50+170.46 грн
100+145.28 грн
В кошику  од. на суму  грн.
PSMN1R7-60BS,118 PSMN1R7-60BS,118 Nexperia USA Inc. PSMN1R7-60BS.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
на замовлення 1150 шт:
термін постачання 21-31 дні (днів)
1+331.44 грн
10+210.97 грн
100+149.41 грн
В кошику  од. на суму  грн.
PSMN2R8-80BS,118 PSMN2R8-80BS,118 Nexperia USA Inc. PSMN2R8-80BS.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
на замовлення 7151 шт:
термін постачання 21-31 дні (днів)
1+338.58 грн
10+216.09 грн
100+153.41 грн
В кошику  од. на суму  грн.
PSMN3R3-80BS,118 PSMN3R3-80BS,118 Nexperia USA Inc. PSMN3R3-80BS.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
на замовлення 1109 шт:
термін постачання 21-31 дні (днів)
2+251.36 грн
10+158.52 грн
100+111.03 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMNR90-30BL,118 PSMNR90-30BL,118 Nexperia USA Inc. PSMNR90-30BL.pdf Description: MOSFET N-CH 30V 120A D2PAK
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1043 шт:
термін постачання 21-31 дні (днів)
2+245.81 грн
10+176.08 грн
100+137.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN4R3-30BL,118 PSMN4R3-30BL,118 Nexperia USA Inc. PSMN4R3-30BL.pdf Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 163 шт:
термін постачання 21-31 дні (днів)
3+153.83 грн
10+94.61 грн
100+64.15 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PSMN022-30BL,118 PSMN022-30BL,118 Nexperia USA Inc. PSMN022-30BL.pdf Description: MOSFET N-CH 30V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN4R5-40BS,118 PSMN4R5-40BS,118 Nexperia USA Inc. PSMN4R5-40BS.pdf Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
на замовлення 2261 шт:
термін постачання 21-31 дні (днів)
2+172.86 грн
10+106.97 грн
100+73.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN4R6-60BS,118 PSMN4R6-60BS,118 Nexperia USA Inc. PSMN4R6-60BS.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
2+206.16 грн
10+128.58 грн
100+88.60 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN4R4-80BS,118 PSMN4R4-80BS,118 Nexperia USA Inc. PSMN4R4-80BS.pdf Description: MOSFET N-CH 80V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 6459 шт:
термін постачання 21-31 дні (днів)
1+327.48 грн
10+207.46 грн
50+161.13 грн
100+137.20 грн
В кошику  од. на суму  грн.
PSMN017-30BL,118 PSMN017-30BL,118 Nexperia USA Inc. PSMN017-30BL.pdf Description: MOSFET N-CH 30V 32A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN017-30BL,118 PSMN017-30BL,118 Nexperia USA Inc. PSMN017-30BL.pdf Description: MOSFET N-CH 30V 32A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
3+121.32 грн
10+74.07 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TL431FDT,215 TL431FDT,215 Nexperia USA Inc. TL431_FAM.pdf Description: IC VREF SHUNT ADJ 2% TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
2N7002BKMB,315 2N7002BKMB,315 Nexperia USA Inc. 2N7002BKMB.pdf Description: MOSFET N-CH 60V 450MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
74AUP2G38GF,115 74AUP2G38GF,115 Nexperia USA Inc. 74AUP2G38.pdf Description: IC GATE NAND OD 2CH 2-INP 8XSON
товару немає в наявності
В кошику  од. на суму  грн.
74AUP2G79GF,115 74AUP2G79GF,115 Nexperia USA Inc. 74AUP2G79.pdf Description: IC FF D-TYPE DUAL 1BIT 8XSON
Number of Bits per Element: 1
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 5.8ns @ 3.3V, 30pF
Supplier Device Package: 8-XSON (1.35x1)
Input Capacitance: 0.6 pF
Clock Frequency: 309 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Iq): 500 nA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 8-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
74AVCH4T245GU,115 74AVCH4T245GU,115 Nexperia USA Inc. 74AVCH4T245.pdf Description: IC TRANSLATION TXRX 0.8V/3.6V
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-XQFN (1.8x2.6)
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
4000+31.08 грн
8000+29.27 грн
12000+28.94 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
74HC2G66GT,115 74HC2G66GT,115 Nexperia USA Inc. 74HC_HCT2G66.pdf Description: IC SWITCH SPST-NOX2 78OHM 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Voltage - Supply, Single (V+): 2V ~ 10V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 20ns, 27ns
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+6.89 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
74HCU04BQ,115 74HCU04BQ,115 Nexperia USA Inc. 74HCU04.pdf Description: IC INVERTER 6CH 1-INP 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
74LVC1G97GF,132 74LVC1G97GF,132 Nexperia USA Inc. 74LVC1G97.pdf Description: IC MF CFG 1-CIR 3-IN 6XSON
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
74LVC1G97GV,125 74LVC1G97GV,125 Nexperia USA Inc. 74LVC1G97.pdf Description: IC MF CFG 1-CIR 3-IN 6TSOP
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 6-TSOP
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: SC-74, SOT-457
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+4.85 грн
6000+4.51 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
74LVC1G98GW,125 74LVC1G98GW,125 Nexperia USA Inc. 74LVC1G98.pdf Description: IC MF CFG 1-CIR 3-IN 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-TSSOP
Part Status: Active
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.26 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS70-04,235 BAS70-04,235 Nexperia USA Inc. BAS70-04.pdf Description: DIODE ARR SCHOT 70V 70MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
BC51PA,115 BC51PA,115 Nexperia USA Inc. BCP51_BCX51_BC51PA.pdf Description: TRANS PNP 45V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC52-10PA,115 BC52-10PA,115 Nexperia USA Inc. BCP52_BCX52_BC52PA.pdf Description: TRANS PNP 60V 1A 3HUSON
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
Power - Max: 420 mW
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC52-16PA,115 BC52-16PA,115 Nexperia USA Inc. BCP52_BCX52_BC52PA.pdf Description: TRANS PNP 60V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC53PA,115 BC53PA,115 Nexperia USA Inc. BC53PA_SER.pdf Description: TRANS PNP 80V 1A 3HUSON
Qualification: AEC-Q100
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
Power - Max: 420 mW
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC54PA,115 BC54PA,115 Nexperia USA Inc. BC54PA_SER.pdf Description: TRANS NPN 45V 1A 3HUSON
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BC55-16PA,115 BC55-16PA,115 Nexperia USA Inc. BC55PA_SER.pdf Description: TRANS NPN 60V 1A 3HUSON
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)
3000+7.70 грн
6000+6.72 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC55PA,115 BC55PA,115 Nexperia USA Inc. BC55PA_SER.pdf Description: TRANS NPN 60V 1A DFN2020D-3
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: DFN2020D-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC56PA,115 BC56PA,115 Nexperia USA Inc. BC56PA_SER.pdf Description: TRANS NPN 80V 1A 3HUSON
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.33 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC69-16PA,115 BC69-16PA,115 Nexperia USA Inc. BCP69_BC869_BC69PA.pdf Description: TRANS PNP 20V 2A 3HUSON
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC69-25PA,115 BC69-25PA,115 Nexperia USA Inc. BCP69_BC869_BC69PA.pdf Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC69PA,115 BC69PA,115 Nexperia USA Inc. BCP69_BC869_BC69PA.pdf Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.39 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BSS84AKMB,315 BSS84AKMB,315 Nexperia USA Inc. BSS84AKMB.pdf Description: MOSFET P-CH 50V 230MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
BUK6246-75C,118 BUK6246-75C,118 Nexperia USA Inc. BUK6246-75C.pdf Description: MOSFET N-CH 75V 22A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BUK626R2-40C,118 BUK626R2-40C,118 Nexperia USA Inc. BUK626R2-40C.pdf Description: MOSFET N-CH 40V 90A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BUK653R3-30C,127 BUK653R3-30C,127 Nexperia USA Inc. BUK653R3-30C.pdf Description: MOSFET N-CH 30V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IP4252CZ8-4-TTL,13 IP4252CZ8-4-TTL,13 Nexperia USA Inc. IP4251_52_53_54-TTL.pdf Description: FILTER RC(PI) 40 OHMS ESD SMD
Number of Channels: 4
Part Status: Active
ESD Protection: Yes
Resistance - Channel (Ohms): 40
Technology: RC (Pi)
Applications: LAN, WAN
Filter Order: 2nd
Attenuation Value: 12dB @ 800MHz ~ 3GHz
Height: 0.022" (0.55mm)
Values: R = 40Ohms, C = 12pF (Total)
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+14.63 грн
8000+13.25 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IP4253CZ12-6-TTL,1 IP4253CZ12-6-TTL,1 Nexperia USA Inc. IP4251_52_53_54-TTL.pdf Description: FILTER RC(PI) 200 OHMS ESD SMD
Number of Channels: 6
ESD Protection: Yes
Resistance - Channel (Ohms): 200
Technology: RC (Pi)
Applications: LAN, WAN
Filter Order: 2nd
Attenuation Value: 33dB @ 800MHz ~ 3GHz
Height: 0.022" (0.55mm)
Values: R = 200Ohms, C = 30pF (Total)
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Package / Case: 12-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IP4283CZ10-TBA,115 IP4283CZ10-TBA,115 Nexperia USA Inc. IP4283CZ10_SER.pdf Description: TVS DIODE 5.5VWM 9.5V DFN251010
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 9.5V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10
Voltage - Reverse Standoff (Typ): 5.5V
Current - Peak Pulse (10/1000µs): 3.8A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IP4283CZ10-TBR,115 IP4283CZ10-TBR,115 Nexperia USA Inc. IP4283CZ10_SER.pdf Description: TVS DIODE 5.5VWM 9.5V DFN2510A10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 3.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DFN2510A-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.5V (Typ)
Power Line Protection: Yes
Part Status: Active
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
5000+9.36 грн
10000+8.27 грн
15000+7.89 грн
25000+7.00 грн
35000+6.76 грн
50000+6.53 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IP4292CZ10-TBR,115 IP4292CZ10-TBR,115 Nexperia USA Inc. IP4292CZ10-TBR.pdf Description: TVS DIODE 5.5VWM 4VC DFN2510A-10
Part Status: Not For New Designs
Power Line Protection: Yes
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: DFN2510A-10
Voltage - Reverse Standoff (Typ): 5.5V
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Applications: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 4V (Typ)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+10.13 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
NX3008NBKMB,315 NX3008NBKMB,315 Nexperia USA Inc. NX3008NBKMB.pdf Description: MOSFET N-CH 30V 530MA DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PBSS2515MB,315 PBSS2515MB,315 Nexperia USA Inc. PBSS2515MB.pdf Description: TRANS NPN 15V 0.5A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
PESD5V0X1BCAL,315 PESD5V0X1BCAL,315 Nexperia USA Inc. PESD5V0X1BCAL.pdf Description: TVS DIODE 5.5VWM 17VC DFN1006-2
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 8.1V
Bidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.8A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PMEG2010EPK,315 PMEG2010EPK,315 Nexperia USA Inc. PMEG2010EPK.pdf Description: DIODE SCHOTTKY 20V 1A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PMN35EN,125 PMN35EN,125 Nexperia USA Inc. PMN35EN.pdf Description: MOSFET N-CH 30V 5.1A 6TSOP
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 15 V
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
PMZB670UPE,315 PMZB670UPE,315 Nexperia USA Inc. PMZB670UPE.pdf Description: MOSFET P-CH 20V 680MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+5.01 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PSMN012-80BS,118 PSMN012-80BS,118 Nexperia USA Inc. PSMN012-80BS.pdf Description: MOSFET N-CH 80V 74A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+57.32 грн
1600+51.03 грн
2400+48.92 грн
4000+43.67 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN015-60BS,118 PSMN015-60BS,118 Nexperia USA Inc. PSMN015-60BS.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
800+44.12 грн
1600+39.16 грн
2400+37.46 грн
4000+33.37 грн
5600+32.61 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN3R8-100BS,118 PSMN3R8-100BS.pdf
PSMN3R8-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+125.85 грн
1600+113.53 грн
2400+109.93 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMNR90-30BL,118 PSMNR90-30BL.pdf
PSMNR90-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 306W (Tc)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN4R3-30BL,118 PSMN4R3-30BL.pdf
PSMN4R3-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN022-30BL,118 PSMN022-30BL.pdf
PSMN022-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
PSMN4R5-40BS,118 PSMN4R5-40BS.pdf
PSMN4R5-40BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+57.32 грн
1600+51.03 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
PSMN4R6-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN4R4-80BS,118 PSMN4R4-80BS.pdf
PSMN4R4-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+118.56 грн
1600+112.97 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN5R6-100BS,118 PSMN5R6-100BS.pdf
PSMN5R6-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8061 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+90.93 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN013-100BS,118 PSMN013-100BS.pdf
PSMN013-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
на замовлення 174 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+182.37 грн
10+113.16 грн
100+77.46 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN1R1-40BS,118 PSMN1R1-40BS.pdf
PSMN1R1-40BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 2028 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+344.92 грн
10+218.99 грн
50+170.46 грн
100+145.28 грн
В кошику  од. на суму  грн.
PSMN1R7-60BS,118 PSMN1R7-60BS.pdf
PSMN1R7-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
на замовлення 1150 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+331.44 грн
10+210.97 грн
100+149.41 грн
В кошику  од. на суму  грн.
PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
PSMN2R8-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
на замовлення 7151 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+338.58 грн
10+216.09 грн
100+153.41 грн
В кошику  од. на суму  грн.
PSMN3R3-80BS,118 PSMN3R3-80BS.pdf
PSMN3R3-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
на замовлення 1109 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+251.36 грн
10+158.52 грн
100+111.03 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMNR90-30BL,118 PSMNR90-30BL.pdf
PSMNR90-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1043 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+245.81 грн
10+176.08 грн
100+137.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN4R3-30BL,118 PSMN4R3-30BL.pdf
PSMN4R3-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 163 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+153.83 грн
10+94.61 грн
100+64.15 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PSMN022-30BL,118 PSMN022-30BL.pdf
PSMN022-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN4R5-40BS,118 PSMN4R5-40BS.pdf
PSMN4R5-40BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
на замовлення 2261 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+172.86 грн
10+106.97 грн
100+73.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
PSMN4R6-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+206.16 грн
10+128.58 грн
100+88.60 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN4R4-80BS,118 PSMN4R4-80BS.pdf
PSMN4R4-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 6459 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+327.48 грн
10+207.46 грн
50+161.13 грн
100+137.20 грн
В кошику  од. на суму  грн.
PSMN017-30BL,118 PSMN017-30BL.pdf
PSMN017-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN017-30BL,118 PSMN017-30BL.pdf
PSMN017-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+121.32 грн
10+74.07 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TL431FDT,215 TL431_FAM.pdf
TL431FDT,215
Виробник: Nexperia USA Inc.
Description: IC VREF SHUNT ADJ 2% TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
2N7002BKMB,315 2N7002BKMB.pdf
2N7002BKMB,315
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 450MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
74AUP2G38GF,115 74AUP2G38.pdf
74AUP2G38GF,115
Виробник: Nexperia USA Inc.
Description: IC GATE NAND OD 2CH 2-INP 8XSON
товару немає в наявності
В кошику  од. на суму  грн.
74AUP2G79GF,115 74AUP2G79.pdf
74AUP2G79GF,115
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DUAL 1BIT 8XSON
Number of Bits per Element: 1
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 5.8ns @ 3.3V, 30pF
Supplier Device Package: 8-XSON (1.35x1)
Input Capacitance: 0.6 pF
Clock Frequency: 309 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Iq): 500 nA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 8-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
74AVCH4T245GU,115 74AVCH4T245.pdf
74AVCH4T245GU,115
Виробник: Nexperia USA Inc.
Description: IC TRANSLATION TXRX 0.8V/3.6V
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-XQFN (1.8x2.6)
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4000+31.08 грн
8000+29.27 грн
12000+28.94 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
74HC2G66GT,115 74HC_HCT2G66.pdf
74HC2G66GT,115
Виробник: Nexperia USA Inc.
Description: IC SWITCH SPST-NOX2 78OHM 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Voltage - Supply, Single (V+): 2V ~ 10V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 20ns, 27ns
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5000+6.89 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
74HCU04BQ,115 74HCU04.pdf
74HCU04BQ,115
Виробник: Nexperia USA Inc.
Description: IC INVERTER 6CH 1-INP 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
74LVC1G97GF,132 74LVC1G97.pdf
74LVC1G97GF,132
Виробник: Nexperia USA Inc.
Description: IC MF CFG 1-CIR 3-IN 6XSON
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
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74LVC1G97GV,125 74LVC1G97.pdf
74LVC1G97GV,125
Виробник: Nexperia USA Inc.
Description: IC MF CFG 1-CIR 3-IN 6TSOP
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 6-TSOP
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: SC-74, SOT-457
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+4.85 грн
6000+4.51 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
74LVC1G98GW,125 74LVC1G98.pdf
74LVC1G98GW,125
Виробник: Nexperia USA Inc.
Description: IC MF CFG 1-CIR 3-IN 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-TSSOP
Part Status: Active
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+3.26 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS70-04,235 BAS70-04.pdf
BAS70-04,235
Виробник: Nexperia USA Inc.
Description: DIODE ARR SCHOT 70V 70MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
BC51PA,115 BCP51_BCX51_BC51PA.pdf
BC51PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
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BC52-10PA,115 BCP52_BCX52_BC52PA.pdf
BC52-10PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
Power - Max: 420 mW
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC52-16PA,115 BCP52_BCX52_BC52PA.pdf
BC52-16PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC53PA,115 BC53PA_SER.pdf
BC53PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 80V 1A 3HUSON
Qualification: AEC-Q100
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
Power - Max: 420 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC54PA,115 BC54PA_SER.pdf
BC54PA,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 1A 3HUSON
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BC55-16PA,115 BC55PA_SER.pdf
BC55-16PA,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A 3HUSON
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+7.70 грн
6000+6.72 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC55PA,115 BC55PA_SER.pdf
BC55PA,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A DFN2020D-3
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: DFN2020D-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC56PA,115 BC56PA_SER.pdf
BC56PA,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 80V 1A 3HUSON
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+6.33 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC69-16PA,115 BCP69_BC869_BC69PA.pdf
BC69-16PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A 3HUSON
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 3-HUSON (2x2)
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC69-25PA,115 BCP69_BC869_BC69PA.pdf
BC69-25PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC69PA,115 BCP69_BC869_BC69PA.pdf
BC69PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+7.39 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BSS84AKMB,315 BSS84AKMB.pdf
BSS84AKMB,315
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 50V 230MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
BUK6246-75C,118 BUK6246-75C.pdf
BUK6246-75C,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 22A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
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BUK626R2-40C,118 BUK626R2-40C.pdf
BUK626R2-40C,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 90A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
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BUK653R3-30C,127 BUK653R3-30C.pdf
BUK653R3-30C,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
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IP4252CZ8-4-TTL,13 IP4251_52_53_54-TTL.pdf
IP4252CZ8-4-TTL,13
Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) 40 OHMS ESD SMD
Number of Channels: 4
Part Status: Active
ESD Protection: Yes
Resistance - Channel (Ohms): 40
Technology: RC (Pi)
Applications: LAN, WAN
Filter Order: 2nd
Attenuation Value: 12dB @ 800MHz ~ 3GHz
Height: 0.022" (0.55mm)
Values: R = 40Ohms, C = 12pF (Total)
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4000+14.63 грн
8000+13.25 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
IP4253CZ12-6-TTL,1 IP4251_52_53_54-TTL.pdf
IP4253CZ12-6-TTL,1
Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) 200 OHMS ESD SMD
Number of Channels: 6
ESD Protection: Yes
Resistance - Channel (Ohms): 200
Technology: RC (Pi)
Applications: LAN, WAN
Filter Order: 2nd
Attenuation Value: 33dB @ 800MHz ~ 3GHz
Height: 0.022" (0.55mm)
Values: R = 200Ohms, C = 30pF (Total)
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Package / Case: 12-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
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IP4283CZ10-TBA,115 IP4283CZ10_SER.pdf
IP4283CZ10-TBA,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 9.5V DFN251010
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 9.5V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: DFN2510-10
Voltage - Reverse Standoff (Typ): 5.5V
Current - Peak Pulse (10/1000µs): 3.8A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IP4283CZ10-TBR,115 IP4283CZ10_SER.pdf
IP4283CZ10-TBR,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 9.5V DFN2510A10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 3.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DFN2510A-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.5V (Typ)
Power Line Protection: Yes
Part Status: Active
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5000+9.36 грн
10000+8.27 грн
15000+7.89 грн
25000+7.00 грн
35000+6.76 грн
50000+6.53 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IP4292CZ10-TBR,115 IP4292CZ10-TBR.pdf
IP4292CZ10-TBR,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 4VC DFN2510A-10
Part Status: Not For New Designs
Power Line Protection: Yes
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: DFN2510A-10
Voltage - Reverse Standoff (Typ): 5.5V
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Applications: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-XFDFN
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 4V (Typ)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5000+10.13 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
NX3008NBKMB,315 NX3008NBKMB.pdf
NX3008NBKMB,315
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 530MA DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PBSS2515MB,315 PBSS2515MB.pdf
PBSS2515MB,315
Виробник: Nexperia USA Inc.
Description: TRANS NPN 15V 0.5A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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PESD5V0X1BCAL,315 PESD5V0X1BCAL.pdf
PESD5V0X1BCAL,315
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 17VC DFN1006-2
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 8.1V
Bidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.8A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PMEG2010EPK,315 PMEG2010EPK.pdf
PMEG2010EPK,315
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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PMN35EN,125 PMN35EN.pdf
PMN35EN,125
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.1A 6TSOP
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 15 V
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
товару немає в наявності
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PMZB670UPE,315 PMZB670UPE.pdf
PMZB670UPE,315
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 680MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
10000+5.01 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PSMN012-80BS,118 PSMN012-80BS.pdf
PSMN012-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 74A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+57.32 грн
1600+51.03 грн
2400+48.92 грн
4000+43.67 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+44.12 грн
1600+39.16 грн
2400+37.46 грн
4000+33.37 грн
5600+32.61 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
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