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IP4292CZ10-TBR,115 IP4292CZ10-TBR,115 Nexperia USA Inc. IP4292CZ10-TBR.pdf Description: TVS DIODE 5.5VWM 4VC DFN2510A-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DFN2510A-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4V (Typ)
Power Line Protection: Yes
Part Status: Not For New Designs
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+8.33 грн
10000+7.37 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NX3008NBKMB,315 NX3008NBKMB,315 Nexperia USA Inc. NX3008NBKMB.pdf Description: MOSFET N-CH 30V 530MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PBSS2515MB,315 PBSS2515MB,315 Nexperia USA Inc. PBSS2515MB.pdf Description: TRANS NPN 15V 0.5A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.97 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PESD5V0X1BCAL,315 PESD5V0X1BCAL,315 Nexperia USA Inc. PESD5V0X1BCAL.pdf Description: TVS DIODE 5.5VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 0.85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+3.43 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PMEG2010EPK,315 PMEG2010EPK,315 Nexperia USA Inc. PMEG2010EPK.pdf Description: DIODE SCHOTTKY 20V 1A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PMN35EN,125 PMN35EN,125 Nexperia USA Inc. PMN35EN.pdf Description: MOSFET N-CH 30V 5.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PMZB670UPE,315 PMZB670UPE,315 Nexperia USA Inc. PMZB670UPE.pdf Description: MOSFET P-CH 20V 680MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 10 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+6.04 грн
20000+5.33 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PSMN012-80BS,118 PSMN012-80BS,118 Nexperia USA Inc. PSMN012-80BS.pdf Description: MOSFET N-CH 80V 74A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+49.48 грн
1600+46.80 грн
2400+45.95 грн
4000+42.28 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN015-60BS,118 PSMN015-60BS,118 Nexperia USA Inc. PSMN015-60BS.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
на замовлення 11200 шт:
термін постачання 21-31 дні (днів)
800+50.65 грн
1600+44.95 грн
2400+43.52 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN016-100BS,118 PSMN016-100BS,118 Nexperia USA Inc. PSMN016-100BS.pdf Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tj)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 50 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+55.65 грн
1600+50.67 грн
2400+48.92 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN017-80BS,118 PSMN017-80BS,118 Nexperia USA Inc. PSMN017-80BS.pdf Description: MOSFET N-CH 80V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+53.85 грн
1600+47.84 грн
2400+45.79 грн
4000+40.81 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN027-100BS,118 PSMN027-100BS,118 Nexperia USA Inc. PSMN027-100BS.pdf Description: MOSFET N-CH 100V 37A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN034-100BS,118 PSMN034-100BS,118 Nexperia USA Inc. PSMN034-100BS.pdf Description: MOSFET N-CH 100V 32A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+50.65 грн
1600+44.95 грн
2400+43.52 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN6R5-80BS,118 PSMN6R5-80BS,118 Nexperia USA Inc. PSMN6R5-80BS.pdf Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+83.92 грн
1600+75.11 грн
2400+72.43 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN7R0-100BS,118 PSMN7R0-100BS,118 Nexperia USA Inc. PSMN7R0-100BS.pdf Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Power Dissipation (Max): 269W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+89.89 грн
1600+85.87 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN7R6-60BS,118 PSMN7R6-60BS,118 Nexperia USA Inc. PSMN7R6-60BS.pdf Description: MOSFET N-CH 60V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN8R0-40BS,118 PSMN8R0-40BS,118 Nexperia USA Inc. PSMN8R0-40BS.pdf Description: MOSFET N-CH 40V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+50.65 грн
1600+44.95 грн
2400+43.52 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN8R7-80BS,118 PSMN8R7-80BS,118 Nexperia USA Inc. PSMN8R7-80BS.pdf Description: MOSFET N-CH 80V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
800+51.89 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN9R5-100BS,118 PSMN9R5-100BS,118 Nexperia USA Inc. PSMN9R5-100BS.pdf Description: MOSFET N-CH 100V 89A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+71.29 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BUK765R0-100E,118 BUK765R0-100E,118 Nexperia USA Inc. BUK765R0-100E.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
800+124.98 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BUK962R5-60E,118 BUK962R5-60E,118 Nexperia USA Inc. BUK962R5-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+135.05 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BUK965R8-100E,118 BUK965R8-100E,118 Nexperia USA Inc. BUK965R8-100E.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6300 шт:
термін постачання 21-31 дні (днів)
800+107.21 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN013-30MLC,115 PSMN013-30MLC,115 Nexperia USA Inc. PSMN013-30MLC.pdf Description: MOSFET N-CH 30V 39A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 519 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+14.54 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
PSMN2R8-25MLC,115 PSMN2R8-25MLC,115 Nexperia USA Inc. PSMN2R8-25MLC.pdf Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2432 pF @ 12.5 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
1500+31.49 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
PSMN3R0-30MLC,115 PSMN3R0-30MLC,115 Nexperia USA Inc. PSMN3R0-30MLC.pdf Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PSMN3R9-25MLC,115 PSMN3R9-25MLC,115 Nexperia USA Inc. PSMN3R9-25MLC.pdf Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.15mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1524 pF @ 12.5 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+18.04 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
PSMN4R4-30MLC,115 PSMN4R4-30MLC,115 Nexperia USA Inc. PSMN4R4-30MLC.pdf Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.65mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN7R0-30MLC,115 PSMN7R0-30MLC,115 Nexperia USA Inc. PSMN7R0-30MLC.pdf Description: MOSFET N-CH 30V 67A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1076 pF @ 15 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
1500+20.54 грн
3000+16.60 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
PSMN9R0-25MLC,115 PSMN9R0-25MLC,115 Nexperia USA Inc. PSMN9R0-25MLC.pdf Description: MOSFET N-CH 25V 55A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.65mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12.5 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN9R8-30MLC,115 PSMN9R8-30MLC,115 Nexperia USA Inc. PSMN9R8-30MLC.pdf Description: MOSFET N-CH 30V 50A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BUK765R0-100E,118 BUK765R0-100E,118 Nexperia USA Inc. BUK765R0-100E.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10171 шт:
термін постачання 21-31 дні (днів)
2+319.21 грн
10+208.59 грн
100+149.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK962R5-60E,118 BUK962R5-60E,118 Nexperia USA Inc. BUK962R5-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2892 шт:
термін постачання 21-31 дні (днів)
1+374.59 грн
10+238.78 грн
100+169.69 грн
В кошику  од. на суму  грн.
BUK965R8-100E,118 BUK965R8-100E,118 Nexperia USA Inc. BUK965R8-100E.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6326 шт:
термін постачання 21-31 дні (днів)
2+267.91 грн
10+169.06 грн
100+118.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN013-30MLC,115 PSMN013-30MLC,115 Nexperia USA Inc. PSMN013-30MLC.pdf Description: MOSFET N-CH 30V 39A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 519 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
7+51.30 грн
11+30.66 грн
100+19.74 грн
500+14.10 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PSMN2R8-25MLC,115 PSMN2R8-25MLC,115 Nexperia USA Inc. PSMN2R8-25MLC.pdf Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2432 pF @ 12.5 V
на замовлення 24373 шт:
термін постачання 21-31 дні (днів)
6+59.45 грн
10+46.50 грн
100+36.17 грн
500+28.78 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PSMN3R0-30MLC,115 PSMN3R0-30MLC,115 Nexperia USA Inc. PSMN3R0-30MLC.pdf Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)
4+83.06 грн
10+50.34 грн
100+33.15 грн
500+24.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PSMN3R9-25MLC,115 PSMN3R9-25MLC,115 Nexperia USA Inc. PSMN3R9-25MLC.pdf Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.15mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1524 pF @ 12.5 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
6+64.33 грн
10+43.13 грн
100+28.83 грн
500+22.85 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PSMN4R4-30MLC,115 PSMN4R4-30MLC,115 Nexperia USA Inc. PSMN4R4-30MLC.pdf Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.65mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN7R0-30MLC,115 PSMN7R0-30MLC,115 Nexperia USA Inc. PSMN7R0-30MLC.pdf Description: MOSFET N-CH 30V 67A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1076 pF @ 15 V
на замовлення 15407 шт:
термін постачання 21-31 дні (днів)
6+58.63 грн
10+36.78 грн
100+25.16 грн
500+20.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PSMN9R0-25MLC,115 PSMN9R0-25MLC,115 Nexperia USA Inc. PSMN9R0-25MLC.pdf Description: MOSFET N-CH 25V 55A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.65mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12.5 V
на замовлення 1397 шт:
термін постачання 21-31 дні (днів)
7+52.12 грн
10+50.26 грн
100+33.32 грн
500+24.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PSMN9R8-30MLC,115 PSMN9R8-30MLC,115 Nexperia USA Inc. PSMN9R8-30MLC.pdf Description: MOSFET N-CH 30V 50A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
на замовлення 509 шт:
термін постачання 21-31 дні (днів)
7+52.93 грн
10+34.11 грн
100+23.37 грн
500+17.33 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BAS40XY,115 BAS40XY,115 Nexperia USA Inc. BAS40XY.pdf Description: DIODE ARR SCHOT 40V 120MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15565 шт:
термін постачання 21-31 дні (днів)
24+13.84 грн
34+9.41 грн
100+9.27 грн
500+6.80 грн
1000+6.04 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BUK7109-75ATE,118 BUK7109-75ATE,118 Nexperia USA Inc. BUK7109-75ATE.pdf Description: MOSFET N-CH 75V 75A SOT426
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK714R1-40BT,118 BUK714R1-40BT,118 Nexperia USA Inc. BUK714R1-40BT.pdf Description: MOSFET N-CH 40V 75A SOT426
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK72150-55A,118 BUK72150-55A,118 Nexperia USA Inc. BUK72150-55A.pdf Description: MOSFET N-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7373 шт:
термін постачання 21-31 дні (днів)
4+95.28 грн
10+57.71 грн
100+38.10 грн
500+27.83 грн
1000+25.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK7222-55A,118 BUK7222-55A,118 Nexperia USA Inc. BUK7222-55A.pdf Description: MOSFET N-CH 55V 48A DPAK
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
4+100.98 грн
10+86.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK7240-100A,118 BUK7240-100A,118 Nexperia USA Inc. BUK7240-100A.pdf Description: MOSFET N-CH 100V 34A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2293 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4935 шт:
термін постачання 21-31 дні (днів)
2+173.45 грн
10+106.49 грн
100+72.35 грн
500+54.18 грн
1000+49.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK7275-100A,118 BUK7275-100A,118 Nexperia USA Inc. BUK7275-100A.pdf Description: MOSFET N-CH 100V 21.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5564 шт:
термін постачання 21-31 дні (днів)
3+125.40 грн
10+77.16 грн
100+51.73 грн
500+38.31 грн
1000+35.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7608-55A,118 BUK7608-55A,118 Nexperia USA Inc. BUK7608-55A.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK7609-75A,118 BUK7609-75A,118 Nexperia USA Inc. BUK7609-75A.pdf Description: MOSFET N-CH 75V 75A D2PAK
товару немає в наявності
В кошику  од. на суму  грн.
BUK7635-100A,118 BUK7635-100A,118 Nexperia USA Inc. BUK7635-100A.pdf Description: MOSFET N-CH 100V 41A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9215-55A,118 BUK9215-55A,118 Nexperia USA Inc. BUK9215-55A.pdf Description: MOSFET N-CH 55V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2916 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9219-55A,118 BUK9219-55A,118 Nexperia USA Inc. BUK9219-55A.pdf Description: MOSFET N-CH 55V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
3+119.70 грн
10+94.41 грн
100+73.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9225-55A,118 BUK9225-55A,118 Nexperia USA Inc. BUK9225-55A.pdf Description: MOSFET N-CH 55V 43A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9226-75A,118 BUK9226-75A,118 Nexperia USA Inc. BUK9226-75A.pdf Description: MOSFET N-CH 75V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 24.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2262 шт:
термін постачання 21-31 дні (днів)
2+173.45 грн
10+106.72 грн
100+72.52 грн
500+54.30 грн
1000+49.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9240-100A,118 BUK9240-100A,118 Nexperia USA Inc. BUK9240-100A.pdf Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1269 шт:
термін постачання 21-31 дні (днів)
3+155.53 грн
10+95.59 грн
100+64.95 грн
500+48.63 грн
1000+44.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9606-55A,118 BUK9606-55A,118 Nexperia USA Inc. BUK9606-55A.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+289.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9609-75A,118 BUK9609-75A,118 Nexperia USA Inc. BUK9609-75A.pdf Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9620-55A,118 BUK9620-55A,118 Nexperia USA Inc. BUK9620-55A.pdf Description: MOSFET N-CH 55V 54A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9624-55A,118 BUK9624-55A,118 Nexperia USA Inc. BUK9624-55A.pdf Description: MOSFET N-CH 55V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)
3+124.59 грн
10+99.90 грн
100+79.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IP4292CZ10-TBR,115 IP4292CZ10-TBR.pdf
IP4292CZ10-TBR,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 4VC DFN2510A-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DFN2510A-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4V (Typ)
Power Line Protection: Yes
Part Status: Not For New Designs
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+8.33 грн
10000+7.37 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NX3008NBKMB,315 NX3008NBKMB.pdf
NX3008NBKMB,315
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 530MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PBSS2515MB,315 PBSS2515MB.pdf
PBSS2515MB,315
Виробник: Nexperia USA Inc.
Description: TRANS NPN 15V 0.5A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.97 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PESD5V0X1BCAL,315 PESD5V0X1BCAL.pdf
PESD5V0X1BCAL,315
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 0.85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+3.43 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PMEG2010EPK,315 PMEG2010EPK.pdf
PMEG2010EPK,315
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PMN35EN,125 PMN35EN.pdf
PMN35EN,125
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PMZB670UPE,315 PMZB670UPE.pdf
PMZB670UPE,315
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 680MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 10 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+6.04 грн
20000+5.33 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PSMN012-80BS,118 PSMN012-80BS.pdf
PSMN012-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 74A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+49.48 грн
1600+46.80 грн
2400+45.95 грн
4000+42.28 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
на замовлення 11200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+50.65 грн
1600+44.95 грн
2400+43.52 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN016-100BS,118 PSMN016-100BS.pdf
PSMN016-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tj)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 50 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+55.65 грн
1600+50.67 грн
2400+48.92 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN017-80BS,118 PSMN017-80BS.pdf
PSMN017-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+53.85 грн
1600+47.84 грн
2400+45.79 грн
4000+40.81 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN027-100BS,118 PSMN027-100BS.pdf
PSMN027-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 37A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN034-100BS,118 PSMN034-100BS.pdf
PSMN034-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 32A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+50.65 грн
1600+44.95 грн
2400+43.52 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN6R5-80BS,118 PSMN6R5-80BS.pdf
PSMN6R5-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+83.92 грн
1600+75.11 грн
2400+72.43 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN7R0-100BS,118 PSMN7R0-100BS.pdf
PSMN7R0-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Power Dissipation (Max): 269W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+89.89 грн
1600+85.87 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN7R6-60BS,118 PSMN7R6-60BS.pdf
PSMN7R6-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN8R0-40BS,118 PSMN8R0-40BS.pdf
PSMN8R0-40BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+50.65 грн
1600+44.95 грн
2400+43.52 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN8R7-80BS,118 PSMN8R7-80BS.pdf
PSMN8R7-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+51.89 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN9R5-100BS,118 PSMN9R5-100BS.pdf
PSMN9R5-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 89A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+71.29 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BUK765R0-100E,118 BUK765R0-100E.pdf
BUK765R0-100E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+124.98 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BUK962R5-60E,118 BUK962R5-60E.pdf
BUK962R5-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+135.05 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
BUK965R8-100E,118 BUK965R8-100E.pdf
BUK965R8-100E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+107.21 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN013-30MLC,115 PSMN013-30MLC.pdf
PSMN013-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 39A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 519 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+14.54 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
PSMN2R8-25MLC,115 PSMN2R8-25MLC.pdf
PSMN2R8-25MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2432 pF @ 12.5 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+31.49 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
PSMN3R0-30MLC,115 PSMN3R0-30MLC.pdf
PSMN3R0-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PSMN3R9-25MLC,115 PSMN3R9-25MLC.pdf
PSMN3R9-25MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.15mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1524 pF @ 12.5 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+18.04 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
PSMN4R4-30MLC,115 PSMN4R4-30MLC.pdf
PSMN4R4-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.65mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN7R0-30MLC,115 PSMN7R0-30MLC.pdf
PSMN7R0-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 67A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1076 pF @ 15 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+20.54 грн
3000+16.60 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
PSMN9R0-25MLC,115 PSMN9R0-25MLC.pdf
PSMN9R0-25MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 55A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.65mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12.5 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN9R8-30MLC,115 PSMN9R8-30MLC.pdf
PSMN9R8-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 50A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BUK765R0-100E,118 BUK765R0-100E.pdf
BUK765R0-100E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+319.21 грн
10+208.59 грн
100+149.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK962R5-60E,118 BUK962R5-60E.pdf
BUK962R5-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2892 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+374.59 грн
10+238.78 грн
100+169.69 грн
В кошику  од. на суму  грн.
BUK965R8-100E,118 BUK965R8-100E.pdf
BUK965R8-100E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6326 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+267.91 грн
10+169.06 грн
100+118.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN013-30MLC,115 PSMN013-30MLC.pdf
PSMN013-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 39A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 519 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.30 грн
11+30.66 грн
100+19.74 грн
500+14.10 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PSMN2R8-25MLC,115 PSMN2R8-25MLC.pdf
PSMN2R8-25MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2432 pF @ 12.5 V
на замовлення 24373 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.45 грн
10+46.50 грн
100+36.17 грн
500+28.78 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PSMN3R0-30MLC,115 PSMN3R0-30MLC.pdf
PSMN3R0-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.06 грн
10+50.34 грн
100+33.15 грн
500+24.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PSMN3R9-25MLC,115 PSMN3R9-25MLC.pdf
PSMN3R9-25MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.15mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1524 pF @ 12.5 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+64.33 грн
10+43.13 грн
100+28.83 грн
500+22.85 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PSMN4R4-30MLC,115 PSMN4R4-30MLC.pdf
PSMN4R4-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.65mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN7R0-30MLC,115 PSMN7R0-30MLC.pdf
PSMN7R0-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 67A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1076 pF @ 15 V
на замовлення 15407 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+58.63 грн
10+36.78 грн
100+25.16 грн
500+20.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PSMN9R0-25MLC,115 PSMN9R0-25MLC.pdf
PSMN9R0-25MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 55A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.65mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12.5 V
на замовлення 1397 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+52.12 грн
10+50.26 грн
100+33.32 грн
500+24.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PSMN9R8-30MLC,115 PSMN9R8-30MLC.pdf
PSMN9R8-30MLC,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 50A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
на замовлення 509 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+52.93 грн
10+34.11 грн
100+23.37 грн
500+17.33 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BAS40XY,115 BAS40XY.pdf
BAS40XY,115
Виробник: Nexperia USA Inc.
Description: DIODE ARR SCHOT 40V 120MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15565 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.84 грн
34+9.41 грн
100+9.27 грн
500+6.80 грн
1000+6.04 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BUK7109-75ATE,118 BUK7109-75ATE.pdf
BUK7109-75ATE,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A SOT426
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK714R1-40BT,118 BUK714R1-40BT.pdf
BUK714R1-40BT,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A SOT426
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK72150-55A,118 BUK72150-55A.pdf
BUK72150-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7373 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.28 грн
10+57.71 грн
100+38.10 грн
500+27.83 грн
1000+25.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK7222-55A,118 BUK7222-55A.pdf
BUK7222-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 48A DPAK
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.98 грн
10+86.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK7240-100A,118 BUK7240-100A.pdf
BUK7240-100A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 34A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2293 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.45 грн
10+106.49 грн
100+72.35 грн
500+54.18 грн
1000+49.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK7275-100A,118 BUK7275-100A.pdf
BUK7275-100A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 21.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5564 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.40 грн
10+77.16 грн
100+51.73 грн
500+38.31 грн
1000+35.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7608-55A,118 BUK7608-55A.pdf
BUK7608-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK7609-75A,118 BUK7609-75A.pdf
BUK7609-75A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
товару немає в наявності
В кошику  од. на суму  грн.
BUK7635-100A,118 BUK7635-100A.pdf
BUK7635-100A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 41A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9215-55A,118 BUK9215-55A.pdf
BUK9215-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2916 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9219-55A,118 BUK9219-55A.pdf
BUK9219-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.70 грн
10+94.41 грн
100+73.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9225-55A,118 BUK9225-55A.pdf
BUK9225-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 43A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9226-75A,118 BUK9226-75A.pdf
BUK9226-75A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 24.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2262 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.45 грн
10+106.72 грн
100+72.52 грн
500+54.30 грн
1000+49.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9240-100A,118 BUK9240-100A.pdf
BUK9240-100A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1269 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.53 грн
10+95.59 грн
100+64.95 грн
500+48.63 грн
1000+44.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9606-55A,118 BUK9606-55A.pdf
BUK9606-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+289.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9609-75A,118 BUK9609-75A.pdf
BUK9609-75A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9620-55A,118 BUK9620-55A.pdf
BUK9620-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 54A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9624-55A,118 BUK9624-55A.pdf
BUK9624-55A,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.59 грн
10+99.90 грн
100+79.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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