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74VHC32BQ,115 74VHC32BQ,115 Nexperia USA Inc. 74VHC_VHCT32.pdf Description: IC GATE OR 4CH 2-INP 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 839 шт:
термін постачання 21-31 дні (днів)
12+31.09 грн
16+21.12 грн
50+17.36 грн
100+15.21 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
74VHC541BQ,115 74VHC541BQ,115 Nexperia USA Inc. 74VHC_VHCT541.pdf Description: IC BUFF NON-INVERT 5.5V 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 8786 шт:
термін постачання 21-31 дні (днів)
9+39.73 грн
13+27.19 грн
25+24.38 грн
100+19.92 грн
250+18.50 грн
500+17.64 грн
1000+16.87 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
74VHC595BQ,115 74VHC595BQ,115 Nexperia USA Inc. 74VHC_VHCT595.pdf Description: IC SR TRI-STATE 8BIT 16-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Number of Bits per Element: 8
товару немає в наявності
В кошику  од. на суму  грн.
74VHCT244BQ,115 74VHCT244BQ,115 Nexperia USA Inc. 74VHC_VHCT244.pdf Description: IC BUFF NON-INVERT 5.5V 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
74VHCT541BQ,115 74VHCT541BQ,115 Nexperia USA Inc. 74VHC_VHCT541.pdf Description: IC BUF NON-INVERT 5.5V 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 1637 шт:
термін постачання 21-31 дні (днів)
8+47.50 грн
11+31.27 грн
25+27.68 грн
100+22.17 грн
250+20.36 грн
500+19.27 грн
1000+18.07 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74VHCT595BQ,115 74VHCT595BQ,115 Nexperia USA Inc. 74VHC_VHCT595.pdf Description: IC SHIFT REG 8BIT SISO 16DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Number of Bits per Element: 8
на замовлення 5805 шт:
термін постачання 21-31 дні (днів)
8+44.04 грн
12+30.19 грн
25+27.04 грн
100+22.10 грн
250+20.53 грн
500+19.58 грн
1000+18.49 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
CBT3244ABQ,115 CBT3244ABQ,115 Nexperia USA Inc. CBT3244A.pdf Description: IC BUS SWITCH 4 X 1:1 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Obsolete
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
9+41.45 грн
13+26.86 грн
25+23.72 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
XC7SH08GV,125 XC7SH08GV,125 Nexperia USA Inc. XC7SH08.pdf Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 5298 шт:
термін постачання 21-31 дні (днів)
11+33.68 грн
15+22.70 грн
25+20.22 грн
100+16.45 грн
250+15.25 грн
500+14.53 грн
1000+13.76 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
PSMN013-100BS,118 PSMN013-100BS,118 Nexperia USA Inc. PSMN013-100BS.pdf Description: MOSFET N-CH 100V 68A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)
800+55.13 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN1R1-40BS,118 PSMN1R1-40BS,118 Nexperia USA Inc. PSMN1R1-40BS.pdf Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+137.15 грн
1600+131.95 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN1R7-60BS,118 PSMN1R7-60BS,118 Nexperia USA Inc. PSMN1R7-60BS.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+143.91 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN2R8-80BS,118 PSMN2R8-80BS,118 Nexperia USA Inc. PSMN2R8-80BS.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
800+150.87 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN3R3-80BS,118 PSMN3R3-80BS,118 Nexperia USA Inc. PSMN3R3-80BS.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+114.71 грн
1600+107.22 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN3R8-100BS,118 PSMN3R8-100BS,118 Nexperia USA Inc. PSMN3R8-100BS.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
на замовлення 11200 шт:
термін постачання 21-31 дні (днів)
800+151.63 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMNR90-30BL,118 PSMNR90-30BL,118 Nexperia USA Inc. PSMNR90-30BL.pdf Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN4R3-30BL,118 PSMN4R3-30BL,118 Nexperia USA Inc. PSMN4R3-30BL.pdf Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+64.19 грн
1600+57.02 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN022-30BL,118 PSMN022-30BL,118 Nexperia USA Inc. PSMN022-30BL.pdf Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN4R5-40BS,118 PSMN4R5-40BS,118 Nexperia USA Inc. PSMN4R5-40BS.pdf Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+68.18 грн
1600+60.71 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN4R6-60BS,118 PSMN4R6-60BS,118 Nexperia USA Inc. PSMN4R6-60BS.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
800+83.61 грн
1600+74.70 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN4R4-80BS,118 PSMN4R4-80BS,118 Nexperia USA Inc. PSMN4R4-80BS.pdf Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
800+129.13 грн
1600+123.04 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN5R6-100BS,118 PSMN5R6-100BS,118 Nexperia USA Inc. PSMN5R6-100BS.pdf Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8061 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+99.04 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN013-100BS,118 PSMN013-100BS,118 Nexperia USA Inc. PSMN013-100BS.pdf Description: MOSFET N-CH 100V 68A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
на замовлення 13085 шт:
термін постачання 21-31 дні (днів)
2+191.72 грн
10+119.17 грн
100+81.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN1R1-40BS,118 PSMN1R1-40BS,118 Nexperia USA Inc. PSMN1R1-40BS.pdf Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
на замовлення 2028 шт:
термін постачання 21-31 дні (днів)
1+375.67 грн
10+238.51 грн
50+185.65 грн
100+158.23 грн
В кошику  од. на суму  грн.
PSMN1R7-60BS,118 PSMN1R7-60BS,118 Nexperia USA Inc. PSMN1R7-60BS.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
на замовлення 2356 шт:
термін постачання 21-31 дні (днів)
1+389.48 грн
10+247.82 грн
50+193.13 грн
100+164.73 грн
В кошику  од. на суму  грн.
PSMN2R8-80BS,118 PSMN2R8-80BS,118 Nexperia USA Inc. PSMN2R8-80BS.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
на замовлення 24378 шт:
термін постачання 21-31 дні (днів)
1+403.30 грн
10+257.05 грн
50+200.65 грн
100+171.25 грн
В кошику  од. на суму  грн.
PSMN3R3-80BS,118 PSMN3R3-80BS,118 Nexperia USA Inc. PSMN3R3-80BS.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
на замовлення 6719 шт:
термін постачання 21-31 дні (днів)
2+322.12 грн
10+203.16 грн
50+157.13 грн
100+133.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMNR90-30BL,118 PSMNR90-30BL,118 Nexperia USA Inc. PSMNR90-30BL.pdf Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
на замовлення 1043 шт:
термін постачання 21-31 дні (днів)
2+267.72 грн
10+191.77 грн
100+150.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN4R3-30BL,118 PSMN4R3-30BL,118 Nexperia USA Inc. PSMN4R3-30BL.pdf Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
2+196.90 грн
10+121.50 грн
50+91.88 грн
100+77.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN022-30BL,118 PSMN022-30BL,118 Nexperia USA Inc. PSMN022-30BL.pdf Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN4R5-40BS,118 PSMN4R5-40BS,118 Nexperia USA Inc. PSMN4R5-40BS.pdf Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
на замовлення 2267 шт:
термін постачання 21-31 дні (днів)
2+205.54 грн
10+127.24 грн
50+96.70 грн
100+81.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN4R6-60BS,118 PSMN4R6-60BS,118 Nexperia USA Inc. PSMN4R6-60BS.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
на замовлення 8593 шт:
термін постачання 21-31 дні (днів)
2+245.26 грн
10+152.93 грн
50+116.98 грн
100+98.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN4R4-80BS,118 PSMN4R4-80BS,118 Nexperia USA Inc. PSMN4R4-80BS.pdf Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
на замовлення 6459 шт:
термін постачання 21-31 дні (днів)
1+356.67 грн
10+225.95 грн
50+175.49 грн
100+149.42 грн
В кошику  од. на суму  грн.
PSMN017-30BL,118 PSMN017-30BL,118 Nexperia USA Inc. PSMN017-30BL.pdf Description: MOSFET N-CH 30V 32A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN017-30BL,118 PSMN017-30BL,118 Nexperia USA Inc. PSMN017-30BL.pdf Description: MOSFET N-CH 30V 32A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
3+132.13 грн
10+80.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TL431FDT,215 TL431FDT,215 Nexperia USA Inc. TL431_FAM.pdf Description: IC VREF SHUNT ADJ 2% TO236AB
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 2.495V
Grade: Automotive
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Qualification: AEC-Q100
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2N7002BKMB,315 2N7002BKMB,315 Nexperia USA Inc. 2N7002BKMB.pdf Description: MOSFET N-CH 60V 450MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
74AUP2G38GF,115 74AUP2G38GF,115 Nexperia USA Inc. 74AUP2G38.pdf Description: IC GATE NAND OD 2CH 2-INP 8XSON
товару немає в наявності
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74AUP2G79GF,115 74AUP2G79GF,115 Nexperia USA Inc. 74AUP2G79.pdf Description: IC FF D-TYPE DUAL 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Quiescent (Iq): 500 nA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 309 MHz
Input Capacitance: 0.6 pF
Supplier Device Package: 8-XSON (1.35x1)
Max Propagation Delay @ V, Max CL: 5.8ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Bits per Element: 1
товару немає в наявності
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74AVCH4T245GU,115 74AVCH4T245GU,115 Nexperia USA Inc. 74AVCH4T245.pdf Description: IC TRANSLATION TXRX 3.6V 16-XQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-XQFN (1.8x2.6)
Part Status: Active
товару немає в наявності
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74HC2G66GT,115 74HC2G66GT,115 Nexperia USA Inc. 74HC_HCT2G66.pdf Description: IC SWITCH SPST-NOX2 78OHM 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Voltage - Supply, Single (V+): 2V ~ 10V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 20ns, 27ns
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+9.20 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
74HCU04BQ,115 74HCU04BQ,115 Nexperia USA Inc. 74HCU04.pdf Description: IC INVERTER 6CH 1-INP 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
товару немає в наявності
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74LVC1G97GF,132 74LVC1G97GF,132 Nexperia USA Inc. 74LVC1G97.pdf Description: IC MF CFG 1-CIR 3-IN 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
Number of Circuits: 1
товару немає в наявності
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74LVC1G97GV,125 74LVC1G97GV,125 Nexperia USA Inc. 74LVC1G97.pdf Description: IC MF CFG 1-CIR 3-IN 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-TSOP
Part Status: Active
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+5.28 грн
6000+4.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
74LVC1G98GW,125 74LVC1G98GW,125 Nexperia USA Inc. 74LVC1G98.pdf Description: IC MF CFG 1-CIR 3-IN 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-TSSOP
Part Status: Active
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAS70-04,235 BAS70-04,235 Nexperia USA Inc. BAS70-04.pdf Description: DIODE ARR SCHOT 70V 70MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
товару немає в наявності
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BC51PA,115 BC51PA,115 Nexperia USA Inc. BCP51_BCX51_BC51PA.pdf Description: TRANS PNP 45V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC52-10PA,115 BC52-10PA,115 Nexperia USA Inc. BCP52_BCX52_BC52PA.pdf Description: TRANS PNP 60V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC52-16PA,115 BC52-16PA,115 Nexperia USA Inc. BCP52_BCX52_BC52PA.pdf Description: TRANS PNP 60V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC53PA,115 BC53PA,115 Nexperia USA Inc. BC53PA_SER.pdf Description: TRANS PNP 80V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC54PA,115 BC54PA,115 Nexperia USA Inc. BC54PA_SER.pdf Description: TRANS NPN 45V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
товару немає в наявності
В кошику  од. на суму  грн.
BC55-16PA,115 BC55-16PA,115 Nexperia USA Inc. BC55PA_SER.pdf Description: TRANS NPN 60V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 650 mW
Qualification: AEC-Q100
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)
3000+8.39 грн
6000+7.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BC55PA,115 BC55PA,115 Nexperia USA Inc. BC55PA_SER.pdf Description: TRANS NPN 60V 1A DFN2020D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC56PA,115 BC56PA,115 Nexperia USA Inc. BC56PA_SER.pdf Description: TRANS NPN 80V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BC69-16PA,115 BC69-16PA,115 Nexperia USA Inc. BCP69_BC869_BC69PA.pdf Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC69-25PA,115 BC69-25PA,115 Nexperia USA Inc. BCP69_BC869_BC69PA.pdf Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BC69PA,115 BC69PA,115 Nexperia USA Inc. BCP69_BC869_BC69PA.pdf Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.05 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSS84AKMB,315 BSS84AKMB,315 Nexperia USA Inc. BSS84AKMB.pdf Description: MOSFET P-CH 50V 230MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
товару немає в наявності
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BUK6246-75C,118 BUK6246-75C,118 Nexperia USA Inc. BUK6246-75C.pdf Description: MOSFET N-CH 75V 22A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK626R2-40C,118 BUK626R2-40C,118 Nexperia USA Inc. BUK626R2-40C.pdf Description: MOSFET N-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK653R3-30C,127 BUK653R3-30C,127 Nexperia USA Inc. BUK653R3-30C.pdf Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
74VHC32BQ,115 74VHC_VHCT32.pdf
74VHC32BQ,115
Виробник: Nexperia USA Inc.
Description: IC GATE OR 4CH 2-INP 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 839 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+31.09 грн
16+21.12 грн
50+17.36 грн
100+15.21 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
74VHC541BQ,115 74VHC_VHCT541.pdf
74VHC541BQ,115
Виробник: Nexperia USA Inc.
Description: IC BUFF NON-INVERT 5.5V 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 8786 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.73 грн
13+27.19 грн
25+24.38 грн
100+19.92 грн
250+18.50 грн
500+17.64 грн
1000+16.87 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
74VHC595BQ,115 74VHC_VHCT595.pdf
74VHC595BQ,115
Виробник: Nexperia USA Inc.
Description: IC SR TRI-STATE 8BIT 16-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Number of Bits per Element: 8
товару немає в наявності
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74VHCT244BQ,115 74VHC_VHCT244.pdf
74VHCT244BQ,115
Виробник: Nexperia USA Inc.
Description: IC BUFF NON-INVERT 5.5V 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
74VHCT541BQ,115 74VHC_VHCT541.pdf
74VHCT541BQ,115
Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 5.5V 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 1637 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+47.50 грн
11+31.27 грн
25+27.68 грн
100+22.17 грн
250+20.36 грн
500+19.27 грн
1000+18.07 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74VHCT595BQ,115 74VHC_VHCT595.pdf
74VHCT595BQ,115
Виробник: Nexperia USA Inc.
Description: IC SHIFT REG 8BIT SISO 16DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Number of Bits per Element: 8
на замовлення 5805 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.04 грн
12+30.19 грн
25+27.04 грн
100+22.10 грн
250+20.53 грн
500+19.58 грн
1000+18.49 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
CBT3244ABQ,115 CBT3244A.pdf
CBT3244ABQ,115
Виробник: Nexperia USA Inc.
Description: IC BUS SWITCH 4 X 1:1 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Obsolete
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+41.45 грн
13+26.86 грн
25+23.72 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
XC7SH08GV,125 XC7SH08.pdf
XC7SH08GV,125
Виробник: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 5298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+33.68 грн
15+22.70 грн
25+20.22 грн
100+16.45 грн
250+15.25 грн
500+14.53 грн
1000+13.76 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
PSMN013-100BS,118 PSMN013-100BS.pdf
PSMN013-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+55.13 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN1R1-40BS,118 PSMN1R1-40BS.pdf
PSMN1R1-40BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+137.15 грн
1600+131.95 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN1R7-60BS,118 PSMN1R7-60BS.pdf
PSMN1R7-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+143.91 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
PSMN2R8-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+150.87 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN3R3-80BS,118 PSMN3R3-80BS.pdf
PSMN3R3-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+114.71 грн
1600+107.22 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN3R8-100BS,118 PSMN3R8-100BS.pdf
PSMN3R8-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
на замовлення 11200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+151.63 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMNR90-30BL,118 PSMNR90-30BL.pdf
PSMNR90-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN4R3-30BL,118 PSMN4R3-30BL.pdf
PSMN4R3-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+64.19 грн
1600+57.02 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN022-30BL,118 PSMN022-30BL.pdf
PSMN022-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN4R5-40BS,118 PSMN4R5-40BS.pdf
PSMN4R5-40BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+68.18 грн
1600+60.71 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
PSMN4R6-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+83.61 грн
1600+74.70 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN4R4-80BS,118 PSMN4R4-80BS.pdf
PSMN4R4-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+129.13 грн
1600+123.04 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN5R6-100BS,118 PSMN5R6-100BS.pdf
PSMN5R6-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8061 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+99.04 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMN013-100BS,118 PSMN013-100BS.pdf
PSMN013-100BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
на замовлення 13085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.72 грн
10+119.17 грн
100+81.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN1R1-40BS,118 PSMN1R1-40BS.pdf
PSMN1R1-40BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
на замовлення 2028 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+375.67 грн
10+238.51 грн
50+185.65 грн
100+158.23 грн
В кошику  од. на суму  грн.
PSMN1R7-60BS,118 PSMN1R7-60BS.pdf
PSMN1R7-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
на замовлення 2356 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+389.48 грн
10+247.82 грн
50+193.13 грн
100+164.73 грн
В кошику  од. на суму  грн.
PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
PSMN2R8-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
на замовлення 24378 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+403.30 грн
10+257.05 грн
50+200.65 грн
100+171.25 грн
В кошику  од. на суму  грн.
PSMN3R3-80BS,118 PSMN3R3-80BS.pdf
PSMN3R3-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
на замовлення 6719 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+322.12 грн
10+203.16 грн
50+157.13 грн
100+133.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMNR90-30BL,118 PSMNR90-30BL.pdf
PSMNR90-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
на замовлення 1043 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+267.72 грн
10+191.77 грн
100+150.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN4R3-30BL,118 PSMN4R3-30BL.pdf
PSMN4R3-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+196.90 грн
10+121.50 грн
50+91.88 грн
100+77.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN022-30BL,118 PSMN022-30BL.pdf
PSMN022-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
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PSMN4R5-40BS,118 PSMN4R5-40BS.pdf
PSMN4R5-40BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
на замовлення 2267 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+205.54 грн
10+127.24 грн
50+96.70 грн
100+81.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
PSMN4R6-60BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V
на замовлення 8593 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+245.26 грн
10+152.93 грн
50+116.98 грн
100+98.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN4R4-80BS,118 PSMN4R4-80BS.pdf
PSMN4R4-80BS,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
на замовлення 6459 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+356.67 грн
10+225.95 грн
50+175.49 грн
100+149.42 грн
В кошику  од. на суму  грн.
PSMN017-30BL,118 PSMN017-30BL.pdf
PSMN017-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
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PSMN017-30BL,118 PSMN017-30BL.pdf
PSMN017-30BL,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.13 грн
10+80.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TL431FDT,215 TL431_FAM.pdf
TL431FDT,215
Виробник: Nexperia USA Inc.
Description: IC VREF SHUNT ADJ 2% TO236AB
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 2.495V
Grade: Automotive
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Qualification: AEC-Q100
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2N7002BKMB,315 2N7002BKMB.pdf
2N7002BKMB,315
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 450MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
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74AUP2G38GF,115 74AUP2G38.pdf
74AUP2G38GF,115
Виробник: Nexperia USA Inc.
Description: IC GATE NAND OD 2CH 2-INP 8XSON
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74AUP2G79GF,115 74AUP2G79.pdf
74AUP2G79GF,115
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DUAL 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Quiescent (Iq): 500 nA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 309 MHz
Input Capacitance: 0.6 pF
Supplier Device Package: 8-XSON (1.35x1)
Max Propagation Delay @ V, Max CL: 5.8ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Bits per Element: 1
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74AVCH4T245GU,115 74AVCH4T245.pdf
74AVCH4T245GU,115
Виробник: Nexperia USA Inc.
Description: IC TRANSLATION TXRX 3.6V 16-XQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-XQFN (1.8x2.6)
Part Status: Active
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74HC2G66GT,115 74HC_HCT2G66.pdf
74HC2G66GT,115
Виробник: Nexperia USA Inc.
Description: IC SWITCH SPST-NOX2 78OHM 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Voltage - Supply, Single (V+): 2V ~ 10V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 20ns, 27ns
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+9.20 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
74HCU04BQ,115 74HCU04.pdf
74HCU04BQ,115
Виробник: Nexperia USA Inc.
Description: IC INVERTER 6CH 1-INP 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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74LVC1G97GF,132 74LVC1G97.pdf
74LVC1G97GF,132
Виробник: Nexperia USA Inc.
Description: IC MF CFG 1-CIR 3-IN 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
Number of Circuits: 1
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74LVC1G97GV,125 74LVC1G97.pdf
74LVC1G97GV,125
Виробник: Nexperia USA Inc.
Description: IC MF CFG 1-CIR 3-IN 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-TSOP
Part Status: Active
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.28 грн
6000+4.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
74LVC1G98GW,125 74LVC1G98.pdf
74LVC1G98GW,125
Виробник: Nexperia USA Inc.
Description: IC MF CFG 1-CIR 3-IN 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-TSSOP
Part Status: Active
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAS70-04,235 BAS70-04.pdf
BAS70-04,235
Виробник: Nexperia USA Inc.
Description: DIODE ARR SCHOT 70V 70MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
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BC51PA,115 BCP51_BCX51_BC51PA.pdf
BC51PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q100
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BC52-10PA,115 BCP52_BCX52_BC52PA.pdf
BC52-10PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
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BC52-16PA,115 BCP52_BCX52_BC52PA.pdf
BC52-16PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
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BC53PA,115 BC53PA_SER.pdf
BC53PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 80V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Qualification: AEC-Q100
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BC54PA,115 BC54PA_SER.pdf
BC54PA,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
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BC55-16PA,115 BC55PA_SER.pdf
BC55-16PA,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 650 mW
Qualification: AEC-Q100
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.39 грн
6000+7.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BC55PA,115 BC55PA_SER.pdf
BC55PA,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A DFN2020D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
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BC56PA,115 BC56PA_SER.pdf
BC56PA,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 80V 1A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BC69-16PA,115 BCP69_BC869_BC69PA.pdf
BC69-16PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
BC69-25PA,115 BCP69_BC869_BC69PA.pdf
BC69-25PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BC69PA,115 BCP69_BC869_BC69PA.pdf
BC69PA,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 2A 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 420 mW
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.05 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSS84AKMB,315 BSS84AKMB.pdf
BSS84AKMB,315
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 50V 230MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BUK6246-75C,118 BUK6246-75C.pdf
BUK6246-75C,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 22A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK626R2-40C,118 BUK626R2-40C.pdf
BUK626R2-40C,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK653R3-30C,127 BUK653R3-30C.pdf
BUK653R3-30C,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
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