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PTVS6V5P1UTP,115 PTVS6V5P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 6.5VWM 11.2VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 53.6A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 11.2V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PTVS7V5P1UTP,115 PTVS7V5P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 7.5VWM 12.9VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 46.5A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PTVS8V0P1UTP,115 PTVS8V0P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 8VWM 13.6V SOD128/CFP5
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 44.1A
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PUMB9,125 PUMB9,125 Nexperia USA Inc. PUMB9.pdf Description: TRANS PREBIAS 2PNP 50V 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.56 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PSMN1R9-40PLQ PSMN1R9-40PLQ Nexperia USA Inc. PSMN1R9-40PL.pdf Description: MOSFET N-CH 40V 150A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
1+351.15 грн
10+223.91 грн
100+158.90 грн
В кошику  од. на суму  грн.
PSMN3R9-60PSQ PSMN3R9-60PSQ Nexperia USA Inc. PSMN3R9-60PS.pdf Description: MOSFET N-CH 60V 130A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4023 шт:
термін постачання 21-31 дні (днів)
2+245.09 грн
10+211.81 грн
100+173.56 грн
500+138.66 грн
1000+116.94 грн
2000+111.09 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK7613-100E,118 BUK7613-100E,118 Nexperia USA Inc. BUK7613-100E.pdf Description: MOSFET N-CH 100V 72A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 6320 шт:
термін постачання 21-31 дні (днів)
2+232.53 грн
10+145.39 грн
100+100.63 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK761R7-40E,118 BUK761R7-40E,118 Nexperia USA Inc. BUK761R7-40E.pdf Description: MOSFET N-CH 40V 120A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
товару немає в наявності
В кошику  од. на суму  грн.
BUK9611-80E,118 BUK9611-80E,118 Nexperia USA Inc. BUK9611-80E.pdf Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 526 шт:
термін постачання 21-31 дні (днів)
2+223.88 грн
10+139.79 грн
100+96.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK962R8-60E,118 BUK962R8-60E,118 Nexperia USA Inc. BUK962R8-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
1+322.08 грн
10+204.55 грн
В кошику  од. на суму  грн.
BUK963R1-40E,118 BUK963R1-40E,118 Nexperia USA Inc. BUK963R1-40E.pdf Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69.5 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
BUK963R3-60E,118 BUK963R3-60E,118 Nexperia USA Inc. BUK963R3-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2386 шт:
термін постачання 21-31 дні (днів)
2+285.94 грн
10+180.64 грн
100+126.88 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN1R5-30BLEJ PSMN1R5-30BLEJ Nexperia USA Inc. PSMN1R5-30BLE.pdf Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 401W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V
на замовлення 1518 шт:
термін постачання 21-31 дні (днів)
1+329.94 грн
10+210.90 грн
100+150.26 грн
В кошику  од. на суму  грн.
PSMN3R4-30BLE,118 PSMN3R4-30BLE,118 Nexperia USA Inc. PSMN3R4-30BLE.pdf Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
2+217.60 грн
10+135.79 грн
100+93.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN4R8-100BSEJ PSMN4R8-100BSEJ Nexperia USA Inc. PSMN4R8-100BSE.pdf Description: MOSFET N-CH 100V 120A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
на замовлення 1819 шт:
термін постачання 21-31 дні (днів)
1+381.00 грн
10+243.66 грн
50+190.49 грн
100+162.71 грн
В кошику  од. на суму  грн.
PSMN7R6-100BSEJ PSMN7R6-100BSEJ Nexperia USA Inc. PSMN7R6-100BSE.pdf Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 296W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 4817 шт:
термін постачання 21-31 дні (днів)
2+283.59 грн
10+182.99 грн
100+128.67 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK7Y12-40EX BUK7Y12-40EX Nexperia USA Inc. BUK7Y12-40E.pdf Description: MOSFET N-CH 40V 52A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 65W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 2704 шт:
термін постачання 21-31 дні (днів)
3+111.55 грн
10+67.33 грн
50+50.06 грн
100+41.76 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BUK7Y21-40EX BUK7Y21-40EX Nexperia USA Inc. BUK7Y21-40E.pdf Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 617 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
5+71.49 грн
10+42.97 грн
100+28.02 грн
500+20.25 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BUK7Y38-100EX BUK7Y38-100EX Nexperia USA Inc. BUK7Y38-100E.pdf Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1982 шт:
термін постачання 21-31 дні (днів)
4+89.55 грн
10+54.01 грн
100+35.63 грн
500+26.01 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BUK7Y4R4-40EX BUK7Y4R4-40EX Nexperia USA Inc. BUK7Y4R4-40E.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2781 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 934 шт:
термін постачання 21-31 дні (днів)
3+151.61 грн
10+92.89 грн
50+69.84 грн
100+58.55 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BUK7Y65-100EX BUK7Y65-100EX Nexperia USA Inc. BUK7Y65-100E.pdf Description: MOSFET N-CH 100V 19A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2391 шт:
термін постачання 21-31 дні (днів)
5+72.27 грн
10+43.27 грн
100+28.25 грн
500+20.43 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BUK9Y107-80EX BUK9Y107-80EX Nexperia USA Inc. BUK9Y107-80E.pdf Description: MOSFET N-CH 80V 11.8A LFPAK56
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
7+45.56 грн
10+38.05 грн
100+26.33 грн
500+20.65 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
BUK9Y11-80EX BUK9Y11-80EX Nexperia USA Inc. BUK9Y11-80E.pdf Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2033 шт:
термін постачання 21-31 дні (днів)
2+157.11 грн
10+96.52 грн
100+65.50 грн
500+49.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK9Y12-100E,115 BUK9Y12-100E,115 Nexperia USA Inc. BUK9Y12-100E.pdf Description: MOSFET N-CH 100V 85A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 5V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7973 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8940 шт:
термін постачання 21-31 дні (днів)
2+172.04 грн
10+106.66 грн
100+72.79 грн
500+54.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK9Y12-40E,115 BUK9Y12-40E,115 Nexperia USA Inc. BUK9Y12-40E.pdf Description: MOSFET N-CH 40V 52A LFPAK56
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
BUK9Y21-40E,115 BUK9Y21-40E,115 Nexperia USA Inc. BUK9Y21-40E.pdf Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 824 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1422 шт:
термін постачання 21-31 дні (днів)
5+73.84 грн
10+44.48 грн
100+29.03 грн
500+21.01 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BUK9Y65-100E,115 BUK9Y65-100E,115 Nexperia USA Inc. BUK9Y65-100E.pdf Description: MOSFET N-CH 100V 19A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 63.3mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1523 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2822 шт:
термін постачання 21-31 дні (днів)
5+72.27 грн
10+43.50 грн
100+28.38 грн
500+20.53 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BUK9Y8R5-80EX BUK9Y8R5-80EX Nexperia USA Inc. BUK9Y8R5-80E.pdf Description: MOSFET N-CH 80V 100A LFPAK56
Drive Voltage (Max Rds On, Min Rds On): 5V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54.7 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 962 шт:
термін постачання 21-31 дні (днів)
2+224.67 грн
10+139.57 грн
50+106.42 грн
100+89.85 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK9Y8R7-60E,115 BUK9Y8R7-60E,115 Nexperia USA Inc. BUK9Y8R7-60E.pdf Description: MOSFET N-CH 60V 86A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
4+89.55 грн
10+70.35 грн
100+54.72 грн
500+43.52 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
PSMN013-100YSEX PSMN013-100YSEX Nexperia USA Inc. PSMN013-100YSE.pdf Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
на замовлення 17300 шт:
термін постачання 21-31 дні (днів)
2+175.97 грн
10+108.86 грн
100+74.35 грн
500+55.93 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN2R0-30YLE,115 PSMN2R0-30YLE,115 Nexperia USA Inc. PSMN2R0-30YLE.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)
2+175.97 грн
10+108.63 грн
100+74.25 грн
500+55.85 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PMBT2222A,235 PMBT2222A,235 Nexperia USA Inc. PMBT2222A.pdf Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BAS21SW,115 BAS21SW,115 Nexperia USA Inc. BAS21SW.pdf Description: DIODE ARRAY GP 250V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 554 шт:
термін постачання 21-31 дні (днів)
18+18.07 грн
29+10.67 грн
100+6.65 грн
500+4.58 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BC857C,235 BC857C,235 Nexperia USA Inc. BC856_BC857_BC858.pdf Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BSR16,215 BSR16,215 Nexperia USA Inc. BSR16.pdf Description: TRANS PNP 60V 0.6A TO-236AB
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1797 шт:
термін постачання 21-31 дні (днів)
9+35.35 грн
15+20.58 грн
50+14.81 грн
100+12.15 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
BSS138BK,215 BSS138BK,215 Nexperia USA Inc. BSS138BK.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Qualification: AEC-Q101
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
22+14.93 грн
35+8.78 грн
100+5.43 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
BSS138P,215 BSS138P,215 Nexperia USA Inc. BSS138P.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
на замовлення 184223 шт:
термін постачання 21-31 дні (днів)
25+12.57 грн
40+7.56 грн
100+4.67 грн
500+3.19 грн
1000+2.80 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
BSS138PW,115 BSS138PW,115 Nexperia USA Inc. BSS138PW.pdf Description: MOSFET N-CH 60V 320MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2147 шт:
термін постачання 21-31 дні (днів)
22+14.93 грн
36+8.62 грн
100+5.31 грн
500+3.64 грн
1000+3.20 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
BSS84AK,215 BSS84AK,215 Nexperia USA Inc. BSS84AK.pdf Description: MOSFET P-CH 50V 180MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZX384-C24,115 BZX384-C24,115 Nexperia USA Inc. BZX384_SER.pdf Description: DIODE ZENER 24V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
товару немає в наявності
В кошику  од. на суму  грн.
BZX384-C4V3,115 BZX384-C4V3,115 Nexperia USA Inc. BZX384_SER.pdf Description: DIODE ZENER 4.3V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
31+10.21 грн
52+5.90 грн
100+3.62 грн
500+2.46 грн
1000+2.16 грн
Мінімальне замовлення: 31 шт
В кошику  од. на суму  грн.
NX2301P,215 NX2301P,215 Nexperia USA Inc. NX2301P.pdf Description: MOSFET P-CH 20V 2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 400mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 6 V
Qualification: AEC-Q101
на замовлення 6333 шт:
термін постачання 21-31 дні (днів)
14+23.57 грн
22+13.77 грн
100+8.58 грн
500+5.96 грн
1000+5.28 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
NX3008NBKV,115 NX3008NBKV,115 Nexperia USA Inc. NX3008NBKV.pdf Description: MOSFET 2N-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 13980 шт:
термін постачання 21-31 дні (днів)
11+29.85 грн
18+17.32 грн
100+10.92 грн
500+7.63 грн
1000+6.79 грн
2000+6.08 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
PESD24VS1UA,115 PESD24VS1UA,115 Nexperia USA Inc. PESD24VS1UA.pdf Description: TVS DIODE 24VWM 70VC SOD323
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Capacitance @ Frequency: 23pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 160W
Voltage - Clamping (Max) @ Ipp: 70V
Voltage - Breakdown (Min): 26.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
на замовлення 15747 шт:
термін постачання 21-31 дні (днів)
12+28.28 грн
19+16.57 грн
100+10.42 грн
500+7.29 грн
1000+6.49 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
PMV160UP,215 PMV160UP,215 Nexperia USA Inc. PMV160UP.pdf Description: MOSFET P-CH 20V 1.2A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 335mW (Ta), 2.17W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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PMV32UP,215 PMV32UP,215 Nexperia USA Inc. PMV32UP.pdf Description: MOSFET P-CH 20V 4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
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PUMD10,115 PUMD10,115 Nexperia USA Inc. PUMD10.pdf Description: TRANS PREBIAS 1NPN 1PNP 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 8150 шт:
термін постачання 21-31 дні (днів)
25+12.57 грн
40+7.72 грн
100+4.75 грн
500+3.25 грн
1000+2.86 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
74HCT03PW-Q100J 74HCT03PW-Q100J Nexperia USA Inc. 74HC_HCT03_Q100.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
74HCT04DB-Q100J Nexperia USA Inc. 74HC_HCT04_Q100.pdf Description: IC INVERTER 6CH 1-INP 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
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В кошику  од. на суму  грн.
74HCT08D/AUJ 74HCT08D/AUJ Nexperia USA Inc. 74HC_HCT08.pdf Description: IC GATE AND 4CH 2-INP 14SO
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 4mA, 5.2mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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В кошику  од. на суму  грн.
74HCT151D/AUJ 74HCT151D/AUJ Nexperia USA Inc. 74HC_HCT151.pdf Description: IC MULTIPLEXER 1 X 8:1 16SO
Supplier Device Package: 16-SO
Voltage Supply Source: Single Supply
Current - Output High, Low: 4mA, 4mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 1 x 8:1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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74HCT163D-Q100J 74HCT163D-Q100J Nexperia USA Inc. 74HC_HCT163_Q100.pdf Description: IC BINARY COUNTER 4-BIT 16SO
Number of Bits per Element: 4
Count Rate: 50 MHz
Voltage - Supply: 4.5 V ~ 5.5 V
Part Status: Obsolete
Supplier Device Package: 16-SO
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up
Operating Temperature: -40°C ~ 125°C
Reset: Synchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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74HCT257D/AUJ 74HCT257D/AUJ Nexperia USA Inc. 74HC_HCT257.pdf Description: IC MULTIPLEXER 4 X 2:1 16SO
Part Status: Active
Supplier Device Package: 16-SO
Voltage Supply Source: Single Supply
Current - Output High, Low: 6mA, 6mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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74HCT273D-Q100J 74HCT273D-Q100J Nexperia USA Inc. 74HC_HCT273_Q100.pdf Description: IC FF D-TYPE SINGLE 8-BIT 20-SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 36 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-SO
Max Propagation Delay @ V, Max CL: 30ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
74HCT4060DB-Q100J 74HCT4060DB-Q100J Nexperia USA Inc. 74HC_HCT4060_Q100.pdf Description: IC BINARY COUNTER 12-BIT 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SSOP
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 88 MHz
Number of Bits per Element: 14
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
74HCT541D-Q100J 74HCT541D-Q100J Nexperia USA Inc. 74HC_HCT541_Q100.pdf Description: IC BUFFER NON-INVERT 5.5V 20-SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
74HCT573DB-Q100J 74HCT573DB-Q100J Nexperia USA Inc. 74HC_HCT573_Q100.pdf Description: IC D-TYPE TRANSP SGL 8:8 20SSOP
Qualification: AEC-Q100
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: 20-SSOP
Delay Time - Propagation: 15ns
Current - Output High, Low: 6mA, 6mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
74HCT595DB-Q100J 74HCT595DB-Q100J Nexperia USA Inc. 74HC_HCT595_Q100.pdf Description: IC SR TRI-STATE 8BIT 16-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-SSOP
Part Status: Obsolete
Number of Bits per Element: 8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
74HCT125D/AUJ 74HCT125D/AUJ Nexperia USA Inc. 74HC_HCT125.pdf Description: IC BUFFER NON-INVERT 5.5V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-SO
Part Status: Active
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В кошику  од. на суму  грн.
74AHCT240PW-Q100J 74AHCT240PW-Q100J Nexperia USA Inc. 74AHCT240_Q100.pdf Description: IC BUFFER INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PTVS6V5P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS6V5P1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 6.5VWM 11.2VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 53.6A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 11.2V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PTVS7V5P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS7V5P1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 46.5A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PTVS8V0P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS8V0P1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 8VWM 13.6V SOD128/CFP5
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 44.1A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PUMB9,125 PUMB9.pdf
PUMB9,125
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+2.56 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PSMN1R9-40PLQ PSMN1R9-40PL.pdf
PSMN1R9-40PLQ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 150A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+351.15 грн
10+223.91 грн
100+158.90 грн
В кошику  од. на суму  грн.
PSMN3R9-60PSQ PSMN3R9-60PS.pdf
PSMN3R9-60PSQ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4023 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+245.09 грн
10+211.81 грн
100+173.56 грн
500+138.66 грн
1000+116.94 грн
2000+111.09 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK7613-100E,118 BUK7613-100E.pdf
BUK7613-100E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 72A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 6320 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+232.53 грн
10+145.39 грн
100+100.63 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK761R7-40E,118 BUK761R7-40E.pdf
BUK761R7-40E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
товару немає в наявності
В кошику  од. на суму  грн.
BUK9611-80E,118 BUK9611-80E.pdf
BUK9611-80E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 526 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+223.88 грн
10+139.79 грн
100+96.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK962R8-60E,118 BUK962R8-60E.pdf
BUK962R8-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+322.08 грн
10+204.55 грн
В кошику  од. на суму  грн.
BUK963R1-40E,118 BUK963R1-40E.pdf
BUK963R1-40E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69.5 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
BUK963R3-60E,118 BUK963R3-60E.pdf
BUK963R3-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2386 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+285.94 грн
10+180.64 грн
100+126.88 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN1R5-30BLEJ PSMN1R5-30BLE.pdf
PSMN1R5-30BLEJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 401W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V
на замовлення 1518 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+329.94 грн
10+210.90 грн
100+150.26 грн
В кошику  од. на суму  грн.
PSMN3R4-30BLE,118 PSMN3R4-30BLE.pdf
PSMN3R4-30BLE,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+217.60 грн
10+135.79 грн
100+93.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN4R8-100BSEJ PSMN4R8-100BSE.pdf
PSMN4R8-100BSEJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
на замовлення 1819 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+381.00 грн
10+243.66 грн
50+190.49 грн
100+162.71 грн
В кошику  од. на суму  грн.
PSMN7R6-100BSEJ PSMN7R6-100BSE.pdf
PSMN7R6-100BSEJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 296W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 4817 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+283.59 грн
10+182.99 грн
100+128.67 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK7Y12-40EX BUK7Y12-40E.pdf
BUK7Y12-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 65W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 2704 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+111.55 грн
10+67.33 грн
50+50.06 грн
100+41.76 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BUK7Y21-40EX BUK7Y21-40E.pdf
BUK7Y21-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 617 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5+71.49 грн
10+42.97 грн
100+28.02 грн
500+20.25 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BUK7Y38-100EX BUK7Y38-100E.pdf
BUK7Y38-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1982 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+89.55 грн
10+54.01 грн
100+35.63 грн
500+26.01 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BUK7Y4R4-40EX BUK7Y4R4-40E.pdf
BUK7Y4R4-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2781 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 934 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+151.61 грн
10+92.89 грн
50+69.84 грн
100+58.55 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BUK7Y65-100EX BUK7Y65-100E.pdf
BUK7Y65-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 19A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2391 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5+72.27 грн
10+43.27 грн
100+28.25 грн
500+20.43 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BUK9Y107-80EX BUK9Y107-80E.pdf
BUK9Y107-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 11.8A LFPAK56
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
7+45.56 грн
10+38.05 грн
100+26.33 грн
500+20.65 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
BUK9Y11-80EX BUK9Y11-80E.pdf
BUK9Y11-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2033 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+157.11 грн
10+96.52 грн
100+65.50 грн
500+49.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK9Y12-100E,115 BUK9Y12-100E.pdf
BUK9Y12-100E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 85A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 5V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7973 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8940 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+172.04 грн
10+106.66 грн
100+72.79 грн
500+54.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK9Y12-40E,115 BUK9Y12-40E.pdf
BUK9Y12-40E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
BUK9Y21-40E,115 BUK9Y21-40E.pdf
BUK9Y21-40E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 824 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1422 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5+73.84 грн
10+44.48 грн
100+29.03 грн
500+21.01 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BUK9Y65-100E,115 BUK9Y65-100E.pdf
BUK9Y65-100E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 19A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 63.3mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1523 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2822 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5+72.27 грн
10+43.50 грн
100+28.38 грн
500+20.53 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
BUK9Y8R5-80EX BUK9Y8R5-80E.pdf
BUK9Y8R5-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A LFPAK56
Drive Voltage (Max Rds On, Min Rds On): 5V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54.7 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 962 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+224.67 грн
10+139.57 грн
50+106.42 грн
100+89.85 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BUK9Y8R7-60E,115 BUK9Y8R7-60E.pdf
BUK9Y8R7-60E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 86A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+89.55 грн
10+70.35 грн
100+54.72 грн
500+43.52 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
PSMN013-100YSEX PSMN013-100YSE.pdf
PSMN013-100YSEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
на замовлення 17300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+175.97 грн
10+108.86 грн
100+74.35 грн
500+55.93 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PSMN2R0-30YLE,115 PSMN2R0-30YLE.pdf
PSMN2R0-30YLE,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2+175.97 грн
10+108.63 грн
100+74.25 грн
500+55.85 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PMBT2222A,235 PMBT2222A.pdf
PMBT2222A,235
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BAS21SW,115 BAS21SW.pdf
BAS21SW,115
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY GP 250V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 554 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
18+18.07 грн
29+10.67 грн
100+6.65 грн
500+4.58 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
BC857C,235 BC856_BC857_BC858.pdf
BC857C,235
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BSR16,215 BSR16.pdf
BSR16,215
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 0.6A TO-236AB
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1797 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
9+35.35 грн
15+20.58 грн
50+14.81 грн
100+12.15 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
BSS138BK,215 BSS138BK.pdf
BSS138BK,215
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Qualification: AEC-Q101
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
22+14.93 грн
35+8.78 грн
100+5.43 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
BSS138P,215 BSS138P.pdf
BSS138P,215
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
на замовлення 184223 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
25+12.57 грн
40+7.56 грн
100+4.67 грн
500+3.19 грн
1000+2.80 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
BSS138PW,115 BSS138PW.pdf
BSS138PW,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 320MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2147 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
22+14.93 грн
36+8.62 грн
100+5.31 грн
500+3.64 грн
1000+3.20 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
BSS84AK,215 BSS84AK.pdf
BSS84AK,215
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 50V 180MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZX384-C24,115 BZX384_SER.pdf
BZX384-C24,115
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 24V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
товару немає в наявності
В кошику  од. на суму  грн.
BZX384-C4V3,115 BZX384_SER.pdf
BZX384-C4V3,115
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 4.3V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
31+10.21 грн
52+5.90 грн
100+3.62 грн
500+2.46 грн
1000+2.16 грн
Мінімальне замовлення: 31 шт
В кошику  од. на суму  грн.
NX2301P,215 NX2301P.pdf
NX2301P,215
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 400mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 6 V
Qualification: AEC-Q101
на замовлення 6333 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
14+23.57 грн
22+13.77 грн
100+8.58 грн
500+5.96 грн
1000+5.28 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
NX3008NBKV,115 NX3008NBKV.pdf
NX3008NBKV,115
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 13980 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
11+29.85 грн
18+17.32 грн
100+10.92 грн
500+7.63 грн
1000+6.79 грн
2000+6.08 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
PESD24VS1UA,115 PESD24VS1UA.pdf
PESD24VS1UA,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 24VWM 70VC SOD323
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Capacitance @ Frequency: 23pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 160W
Voltage - Clamping (Max) @ Ipp: 70V
Voltage - Breakdown (Min): 26.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
на замовлення 15747 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
12+28.28 грн
19+16.57 грн
100+10.42 грн
500+7.29 грн
1000+6.49 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
PMV160UP,215 PMV160UP.pdf
PMV160UP,215
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1.2A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 335mW (Ta), 2.17W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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PMV32UP,215 PMV32UP.pdf
PMV32UP,215
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
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PUMD10,115 PUMD10.pdf
PUMD10,115
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 8150 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
25+12.57 грн
40+7.72 грн
100+4.75 грн
500+3.25 грн
1000+2.86 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
74HCT03PW-Q100J 74HC_HCT03_Q100.pdf
74HCT03PW-Q100J
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
74HCT04DB-Q100J 74HC_HCT04_Q100.pdf
Виробник: Nexperia USA Inc.
Description: IC INVERTER 6CH 1-INP 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
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74HCT08D/AUJ 74HC_HCT08.pdf
74HCT08D/AUJ
Виробник: Nexperia USA Inc.
Description: IC GATE AND 4CH 2-INP 14SO
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 4mA, 5.2mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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74HCT151D/AUJ 74HC_HCT151.pdf
74HCT151D/AUJ
Виробник: Nexperia USA Inc.
Description: IC MULTIPLEXER 1 X 8:1 16SO
Supplier Device Package: 16-SO
Voltage Supply Source: Single Supply
Current - Output High, Low: 4mA, 4mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 1 x 8:1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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74HCT163D-Q100J 74HC_HCT163_Q100.pdf
74HCT163D-Q100J
Виробник: Nexperia USA Inc.
Description: IC BINARY COUNTER 4-BIT 16SO
Number of Bits per Element: 4
Count Rate: 50 MHz
Voltage - Supply: 4.5 V ~ 5.5 V
Part Status: Obsolete
Supplier Device Package: 16-SO
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up
Operating Temperature: -40°C ~ 125°C
Reset: Synchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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74HCT257D/AUJ 74HC_HCT257.pdf
74HCT257D/AUJ
Виробник: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16SO
Part Status: Active
Supplier Device Package: 16-SO
Voltage Supply Source: Single Supply
Current - Output High, Low: 6mA, 6mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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74HCT273D-Q100J 74HC_HCT273_Q100.pdf
74HCT273D-Q100J
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 8-BIT 20-SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 36 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-SO
Max Propagation Delay @ V, Max CL: 30ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
74HCT4060DB-Q100J 74HC_HCT4060_Q100.pdf
74HCT4060DB-Q100J
Виробник: Nexperia USA Inc.
Description: IC BINARY COUNTER 12-BIT 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SSOP
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 88 MHz
Number of Bits per Element: 14
Grade: Automotive
Qualification: AEC-Q100
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74HCT541D-Q100J 74HC_HCT541_Q100.pdf
74HCT541D-Q100J
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 20-SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
74HCT573DB-Q100J 74HC_HCT573_Q100.pdf
74HCT573DB-Q100J
Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP SGL 8:8 20SSOP
Qualification: AEC-Q100
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: 20-SSOP
Delay Time - Propagation: 15ns
Current - Output High, Low: 6mA, 6mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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74HCT595DB-Q100J 74HC_HCT595_Q100.pdf
74HCT595DB-Q100J
Виробник: Nexperia USA Inc.
Description: IC SR TRI-STATE 8BIT 16-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-SSOP
Part Status: Obsolete
Number of Bits per Element: 8
Grade: Automotive
Qualification: AEC-Q100
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74HCT125D/AUJ 74HC_HCT125.pdf
74HCT125D/AUJ
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-SO
Part Status: Active
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74AHCT240PW-Q100J 74AHCT240_Q100.pdf
74AHCT240PW-Q100J
Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
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