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PMBT2222AYSX PMBT2222AYSX Nexperia USA Inc. PMBT2222AYS.pdf Description: TRANS 2NPN 40V 600MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.01 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMBT2907AYSX PMBT2907AYSX Nexperia USA Inc. PMBT2907AYS.pdf Description: TRANS 2PNP 60V 600MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.91 грн
6000+3.38 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMBT4401YSX PMBT4401YSX Nexperia USA Inc. PMBT4401YS.pdf Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.62 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMCM4401VNEAZ PMCM4401VNEAZ Nexperia USA Inc. PMCM4401VNE.pdf Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
товару немає в наявності
В кошику  од. на суму  грн.
PMCM4401VPEZ PMCM4401VPEZ Nexperia USA Inc. PMCM4401VPE.pdf Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
товару немає в наявності
 Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMDPB56XNEAX PMDPB56XNEAX Nexperia USA Inc. PMDPB56XNEA.pdf Description: MOSFET 2N-CH 30V 3.1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020D-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+12.27 грн
6000+10.82 грн
9000+10.31 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMEG050T150EPDZ PMEG050T150EPDZ Nexperia USA Inc. PMEG050T150EPD.pdf Description: DIODE SCHOTTKY 50V 15A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+31.43 грн
3000+27.93 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PMEG100V080ELPDZ PMEG100V080ELPDZ Nexperia USA Inc. PMEG100V080ELPD.pdf Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Qualification: AEC-Q101
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)
1500+17.95 грн
4500+15.02 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PMEG100V100ELPDZ PMEG100V100ELPDZ Nexperia USA Inc. PMEG100V100ELPD.pdf Description: DIODE SCHOTTKY 100V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+19.20 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PMEG3010AESBZ PMEG3010AESBZ Nexperia USA Inc. PMEG3010AESB.pdf Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 ns
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 30 V
товару немає в наявності
 Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMEG3010ESBZ PMEG3010ESBZ Nexperia USA Inc. PMEG3010ESB.pdf Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.2 ns
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
товару немає в наявності
 Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMEG4010AESBZ PMEG4010AESBZ Nexperia USA Inc. PMEG4010AESB.pdf Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.1 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V
товару немає в наявності
 Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMEG4010ESBYL PMEG4010ESBYL Nexperia USA Inc. PMEG4010ESB.pdf Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
PMEG4010ESBZ PMEG4010ESBZ Nexperia USA Inc. PMEG4010ESB.pdf Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
товару немає в наявності
 Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMEG45T15EPDAZ PMEG45T15EPDAZ Nexperia USA Inc. PMEG45T15EPD.pdf Description: DIODE SCHOTTKY 45V 15A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 2200pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+31.10 грн
4500+26.40 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PMEG6010AESBYL PMEG6010AESBYL Nexperia USA Inc. PMEG6010AESB.pdf Description: DIODE SCHOTTKY 60V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.4 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PMF250XNEX PMF250XNEX Nexperia USA Inc. PMF250XNE.pdf Description: MOSFET N-CH 30V 1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Power Dissipation (Max): 342mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMF63UNEX PMF63UNEX Nexperia USA Inc. PMF63UNE.pdf Description: MOSFET N-CH 20V 2.2A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Power Dissipation (Max): 395mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMGD175XNEX PMGD175XNEX Nexperia USA Inc. PMGD175XNE.pdf Description: MOSFET 2N-CH 30V 0.87A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN27UPH PMN27UPH Nexperia USA Inc. PMN27UP.pdf Description: MOSFET P-CH 20V 5.7A 6TSOP
товару немає в наявності
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PMN30UNEX PMN30UNEX Nexperia USA Inc. PMN30UNE.pdf Description: MOSFET N-CH 20V 4.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 558 pF @ 10 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN30UNX PMN30UNX Nexperia USA Inc. PMN30UN.pdf Description: MOSFET N-CH 30V 4.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN30XPX PMN30XPX Nexperia USA Inc. PMN30XP.pdf Description: MOSFET P-CH 20V 5.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN40UPEAX PMN40UPEAX Nexperia USA Inc. PMN40UPE.pdf Description: MOSFET P-CH 20V 4.7A 6TSOP
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PMN52XPX PMN52XPX Nexperia USA Inc. PMN52XP.pdf Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.65 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN70XPEAX PMN70XPEAX Nexperia USA Inc. PMN70XPE.pdf Description: MOSFET P-CH 20V 3.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PMPB10XNEZ PMPB10XNEZ Nexperia USA Inc. PMPB10XNE.pdf Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMPB12UNEX PMPB12UNEX Nexperia USA Inc. PMPB12UNE.pdf Description: MOSFET N-CH 20V 11.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMV100ENEAR PMV100ENEAR Nexperia USA Inc. PMV100ENEA.pdf Description: MOSFET N-CH 30V 3A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 460mW (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMV120ENEAR PMV120ENEAR Nexperia USA Inc. PMV120ENEA.pdf Description: MOSFET N-CH 60V 2.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V
Power Dissipation (Max): 513mW (Ta), 6.4W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.16 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMV42ENER PMV42ENER Nexperia USA Inc. PMV42ENE.pdf Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PQMB11Z PQMB11Z Nexperia USA Inc. PQMB11.pdf Description: TRANS PREBIAS 2PNP DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PQMD13Z PQMD13Z Nexperia USA Inc. PQMD13.pdf Description: TRANS PREBIAS 1NPN 1PNP 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PQMD3Z PQMD3Z Nexperia USA Inc. PQMD3.pdf Description: TRANS PREBIAS 1NPN 1PNP 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PQMH10Z PQMH10Z Nexperia USA Inc. PQMH10.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PQMH11Z PQMH11Z Nexperia USA Inc. PQMH11.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PSMN010-80YLX PSMN010-80YLX Nexperia USA Inc. PSMN010-80YL.pdf Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+46.41 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN013-60YLX PSMN013-60YLX Nexperia USA Inc. PSMN013-60YL.pdf Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+25.24 грн
3000+22.34 грн
4500+21.35 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN014-80YLX PSMN014-80YLX Nexperia USA Inc. PSMN014-80YL.pdf Description: MOSFET N-CH 80V 62A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+29.82 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN015-100YLX PSMN015-100YLX Nexperia USA Inc. PSMN015-100YL.pdf Description: MOSFET N-CH 100V 69A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
PSMN019-100YLX PSMN019-100YLX Nexperia USA Inc. PSMN019-100YL.pdf Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+36.28 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN021-100YLX PSMN021-100YLX Nexperia USA Inc. PSMN021-100YL.pdf Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN0R7-25YLDX PSMN0R7-25YLDX Nexperia USA Inc. PSMN0R7-25YLD.pdf Description: MOSFET N-CH 25V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 12 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+90.90 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN5R2-60YLX PSMN5R2-60YLX Nexperia USA Inc. PSMN5R2-60YL.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6319 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
1500+39.90 грн
4500+34.14 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN5R6-60YLX PSMN5R6-60YLX Nexperia USA Inc. PSMN5R6-60YL.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 25 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+32.36 грн
4500+27.54 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN7R5-60YLX PSMN7R5-60YLX Nexperia USA Inc. PSMN7R5-60YL.pdf Description: MOSFET N-CH 60V 86A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+31.78 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PTVS12VZ1USKNYL PTVS12VZ1USKNYL Nexperia USA Inc. PTVS12VZ1USKN.pdf Description: TVS DIODE 12VWM 32VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 430pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
PTVS5V0Z1USKNYL PTVS5V0Z1USKNYL Nexperia USA Inc. PTVS5V0Z1USKN.pdf Description: TVS DIODE 5VWM 12VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
PSMN2R0-60PSRQ PSMN2R0-60PSRQ Nexperia USA Inc. PSMN2R0-60PSR.pdf Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PSMN0R7-25YLDX PSMN0R7-25YLDX Nexperia USA Inc. PSMN0R7-25YLD.pdf Description: MOSFET N-CH 25V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 12 V
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)
2+258.39 грн
10+162.44 грн
50+125.50 грн
100+106.59 грн
500+87.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BSR41F BSR41F Nexperia USA Inc. BSR41.pdf Description: TRANS NPN 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PBSS4480XZ PBSS4480XZ Nexperia USA Inc. PBSS4480X.pdf Description: TRANS NPN 80V 4A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 550 mW
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
74HC4067D-Q100J 74HC4067D-Q100J Nexperia USA Inc. 74HC_HCT4067_Q100.pdf Description: IC MUX 16:1 120OHM 24SO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 100MHz
Supplier Device Package: 24-SO
Voltage - Supply, Single (V+): 2V ~ 10V
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 45ns, 45ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Part Status: Obsolete
Number of Circuits: 1
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BCP56-10TX BCP56-10TX Nexperia USA Inc. BCP56T_SER.pdf Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
товару немає в наявності
В кошику  од. на суму  грн.
PBSS4360PASX PBSS4360PASX Nexperia USA Inc. PBSS4360PAS.pdf Description: TRANS NPN 60V 3A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
Qualification: AEC-Q101
на замовлення 6119 шт:
термін постачання 21-31 дні (днів)
7+48.59 грн
11+28.97 грн
100+18.62 грн
500+13.31 грн
1000+11.96 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
PMV120ENEAR PMV120ENEAR Nexperia USA Inc. PMV120ENEA.pdf Description: MOSFET N-CH 60V 2.1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V
Power Dissipation (Max): 513mW (Ta), 6.4W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4241 шт:
термін постачання 21-31 дні (днів)
10+33.94 грн
15+19.83 грн
100+12.59 грн
500+8.87 грн
1000+7.92 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
BCP56-10TX BCP56-10TX Nexperia USA Inc. BCP56T_SER.pdf Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
PBHV9515QAZ PBHV9515QAZ Nexperia USA Inc. PBHV9515QA.pdf Description: TRANS PNP 150V 0.5A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 325 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BAS116QAZ BAS116QAZ Nexperia USA Inc. BAS116QA.pdf Description: DIODE STD 75V 300MA DFN1010D3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BAS116QAZ BAS116QAZ Nexperia USA Inc. BAS116QA.pdf Description: DIODE STD 75V 300MA DFN1010D3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
16+19.28 грн
28+10.99 грн
50+7.87 грн
100+6.43 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
PMBT2222AYSX PMBT2222AYS.pdf
PMBT2222AYSX
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 40V 600MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+4.01 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMBT2907AYSX PMBT2907AYS.pdf
PMBT2907AYSX
Виробник: Nexperia USA Inc.
Description: TRANS 2PNP 60V 600MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+3.91 грн
6000+3.38 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMBT4401YSX PMBT4401YS.pdf
PMBT4401YSX
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+3.62 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMCM4401VNEAZ PMCM4401VNE.pdf
PMCM4401VNEAZ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
товару немає в наявності
В кошику  од. на суму  грн.
PMCM4401VPEZ PMCM4401VPE.pdf
PMCM4401VPEZ
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMDPB56XNEAX PMDPB56XNEA.pdf
PMDPB56XNEAX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 3.1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020D-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+12.27 грн
6000+10.82 грн
9000+10.31 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMEG050T150EPDZ PMEG050T150EPD.pdf
PMEG050T150EPDZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 15A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+31.43 грн
3000+27.93 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PMEG100V080ELPDZ PMEG100V080ELPD.pdf
PMEG100V080ELPDZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Qualification: AEC-Q101
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+17.95 грн
4500+15.02 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PMEG100V100ELPDZ PMEG100V100ELPD.pdf
PMEG100V100ELPDZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+19.20 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PMEG3010AESBZ PMEG3010AESB.pdf
PMEG3010AESBZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 ns
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 30 V
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMEG3010ESBZ PMEG3010ESB.pdf
PMEG3010ESBZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.2 ns
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 565 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMEG4010AESBZ PMEG4010AESB.pdf
PMEG4010AESBZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.1 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 505 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 40 V
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMEG4010ESBYL PMEG4010ESB.pdf
PMEG4010ESBYL
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
PMEG4010ESBZ PMEG4010ESB.pdf
PMEG4010ESBZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
PMEG45T15EPDAZ PMEG45T15EPD.pdf
PMEG45T15EPDAZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 15A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 2200pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+31.10 грн
4500+26.40 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PMEG6010AESBYL PMEG6010AESB.pdf
PMEG6010AESBYL
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 1A DSN1006-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.4 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PMF250XNEX PMF250XNE.pdf
PMF250XNEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Power Dissipation (Max): 342mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMF63UNEX PMF63UNE.pdf
PMF63UNEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.2A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Power Dissipation (Max): 395mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMGD175XNEX PMGD175XNE.pdf
PMGD175XNEX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.87A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN27UPH PMN27UP.pdf
PMN27UPH
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.7A 6TSOP
товару немає в наявності
В кошику  од. на суму  грн.
PMN30UNEX PMN30UNE.pdf
PMN30UNEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 558 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN30UNX PMN30UN.pdf
PMN30UNX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN30XPX PMN30XP.pdf
PMN30XPX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN40UPEAX PMN40UPE.pdf
PMN40UPEAX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.7A 6TSOP
товару немає в наявності
В кошику  од. на суму  грн.
PMN52XPX PMN52XP.pdf
PMN52XPX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+6.65 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMN70XPEAX PMN70XPE.pdf
PMN70XPEAX
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
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PMPB10XNEZ PMPB10XNE.pdf
PMPB10XNEZ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMPB12UNEX PMPB12UNE.pdf
PMPB12UNEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 11.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMV100ENEAR PMV100ENEA.pdf
PMV100ENEAR
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 460mW (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMV120ENEAR PMV120ENEA.pdf
PMV120ENEAR
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 2.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V
Power Dissipation (Max): 513mW (Ta), 6.4W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+8.16 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PMV42ENER PMV42ENE.pdf
PMV42ENER
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PQMB11Z PQMB11.pdf
PQMB11Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PQMD13Z PQMD13.pdf
PQMD13Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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PQMD3Z PQMD3.pdf
PQMD3Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PQMH10Z PQMH10.pdf
PQMH10Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PQMH11Z PQMH11.pdf
PQMH11Z
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PSMN010-80YLX PSMN010-80YL.pdf
PSMN010-80YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+46.41 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+25.24 грн
3000+22.34 грн
4500+21.35 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN014-80YLX PSMN014-80YL.pdf
PSMN014-80YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 62A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+29.82 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN015-100YLX PSMN015-100YL.pdf
PSMN015-100YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 69A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
PSMN019-100YLX PSMN019-100YL.pdf
PSMN019-100YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+36.28 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN021-100YLX PSMN021-100YL.pdf
PSMN021-100YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN0R7-25YLDX PSMN0R7-25YLD.pdf
PSMN0R7-25YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 12 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+90.90 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN5R2-60YLX PSMN5R2-60YL.pdf
PSMN5R2-60YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6319 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+39.90 грн
4500+34.14 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN5R6-60YLX PSMN5R6-60YL.pdf
PSMN5R6-60YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 25 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+32.36 грн
4500+27.54 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PSMN7R5-60YLX PSMN7R5-60YL.pdf
PSMN7R5-60YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 86A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1500+31.78 грн
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
PTVS12VZ1USKNYL PTVS12VZ1USKN.pdf
PTVS12VZ1USKNYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 32VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 430pF @ 1MHz
Current - Peak Pulse (10/1000µs): 65A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 32V
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
товару немає в наявності
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PTVS5V0Z1USKNYL PTVS5V0Z1USKN.pdf
PTVS5V0Z1USKNYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
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PSMN2R0-60PSRQ PSMN2R0-60PSR.pdf
PSMN2R0-60PSRQ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PSMN0R7-25YLDX PSMN0R7-25YLD.pdf
PSMN0R7-25YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 12 V
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+258.39 грн
10+162.44 грн
50+125.50 грн
100+106.59 грн
500+87.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BSR41F BSR41.pdf
BSR41F
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PBSS4480XZ PBSS4480X.pdf
PBSS4480XZ
Виробник: Nexperia USA Inc.
Description: TRANS NPN 80V 4A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 550 mW
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
74HC4067D-Q100J 74HC_HCT4067_Q100.pdf
74HC4067D-Q100J
Виробник: Nexperia USA Inc.
Description: IC MUX 16:1 120OHM 24SO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 100MHz
Supplier Device Package: 24-SO
Voltage - Supply, Single (V+): 2V ~ 10V
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 45ns, 45ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Part Status: Obsolete
Number of Circuits: 1
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
BCP56-10TX BCP56T_SER.pdf
BCP56-10TX
Виробник: Nexperia USA Inc.
Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
товару немає в наявності
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PBSS4360PASX PBSS4360PAS.pdf
PBSS4360PASX
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 3A DFN2020D-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 600 mW
Qualification: AEC-Q101
на замовлення 6119 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7+48.59 грн
11+28.97 грн
100+18.62 грн
500+13.31 грн
1000+11.96 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
PMV120ENEAR PMV120ENEA.pdf
PMV120ENEAR
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 2.1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V
Power Dissipation (Max): 513mW (Ta), 6.4W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4241 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+33.94 грн
15+19.83 грн
100+12.59 грн
500+8.87 грн
1000+7.92 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
BCP56-10TX BCP56T_SER.pdf
BCP56-10TX
Виробник: Nexperia USA Inc.
Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
PBHV9515QAZ PBHV9515QA.pdf
PBHV9515QAZ
Виробник: Nexperia USA Inc.
Description: TRANS PNP 150V 0.5A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 325 mW
Qualification: AEC-Q101
товару немає в наявності
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BAS116QAZ BAS116QA.pdf
BAS116QAZ
Виробник: Nexperia USA Inc.
Description: DIODE STD 75V 300MA DFN1010D3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BAS116QAZ BAS116QA.pdf
BAS116QAZ
Виробник: Nexperia USA Inc.
Description: DIODE STD 75V 300MA DFN1010D3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
16+19.28 грн
28+10.99 грн
50+7.87 грн
100+6.43 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.