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PSMN3R9-60PSQ PSMN3R9-60PSQ Nexperia USA Inc. PSMN3R9-60PS.pdf Description: MOSFET N-CH 60V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 4023 шт:
термін постачання 21-31 дні (днів)
2+257.74 грн
10+222.74 грн
100+182.52 грн
500+145.81 грн
1000+122.97 грн
2000+116.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK7613-100E,118 BUK7613-100E,118 Nexperia USA Inc. BUK7613-100E.pdf Description: MOSFET N-CH 100V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Qualification: AEC-Q101
на замовлення 6320 шт:
термін постачання 21-31 дні (днів)
2+244.52 грн
10+152.89 грн
100+105.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK761R7-40E,118 BUK761R7-40E,118 Nexperia USA Inc. BUK761R7-40E.pdf Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9611-80E,118 BUK9611-80E,118 Nexperia USA Inc. BUK9611-80E.pdf Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3055 шт:
термін постачання 21-31 дні (днів)
2+242.87 грн
10+151.94 грн
100+105.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK962R8-60E,118 BUK962R8-60E,118 Nexperia USA Inc. BUK962R8-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
1+338.70 грн
10+215.10 грн
В кошику  од. на суму  грн.
BUK963R1-40E,118 BUK963R1-40E,118 Nexperia USA Inc. BUK963R1-40E.pdf Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK963R3-60E,118 BUK963R3-60E,118 Nexperia USA Inc. BUK963R3-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3870 шт:
термін постачання 21-31 дні (днів)
2+295.74 грн
10+196.73 грн
100+138.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK964R2-60E,118 BUK964R2-60E,118 Nexperia USA Inc. BUK964R2-60E.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PSMN1R5-30BLEJ PSMN1R5-30BLEJ Nexperia USA Inc. PSMN1R5-30BLE.pdf Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 401W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
1+485.74 грн
10+311.99 грн
50+245.04 грн
100+209.75 грн
В кошику  од. на суму  грн.
PSMN3R4-30BLE,118 PSMN3R4-30BLE,118 Nexperia USA Inc. PSMN3R4-30BLE.pdf Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
на замовлення 3228 шт:
термін постачання 21-31 дні (днів)
3+118.96 грн
10+93.47 грн
100+79.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN4R8-100BSEJ PSMN4R8-100BSEJ Nexperia USA Inc. PSMN4R8-100BSE.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)
1+436.18 грн
10+278.50 грн
50+217.73 грн
100+185.98 грн
В кошику  од. на суму  грн.
PSMN7R6-100BSEJ PSMN7R6-100BSEJ Nexperia USA Inc. PSMN7R6-100BSE.pdf Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 296W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
на замовлення 4817 шт:
термін постачання 21-31 дні (днів)
2+298.22 грн
10+192.43 грн
100+135.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK7Y12-40EX BUK7Y12-40EX Nexperia USA Inc. BUK7Y12-40E.pdf Description: MOSFET N-CH 40V 52A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2704 шт:
термін постачання 21-31 дні (днів)
3+117.30 грн
10+70.80 грн
50+52.65 грн
100+43.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7Y21-40EX BUK7Y21-40EX Nexperia USA Inc. BUK7Y21-40E.pdf Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 617 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2686 шт:
термін постачання 21-31 дні (днів)
4+87.57 грн
10+52.18 грн
50+38.47 грн
100+31.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK7Y38-100EX BUK7Y38-100EX Nexperia USA Inc. BUK7Y38-100E.pdf Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2784 шт:
термін постачання 21-31 дні (днів)
3+116.48 грн
10+70.48 грн
50+52.41 грн
100+43.70 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7Y4R4-40EX BUK7Y4R4-40EX Nexperia USA Inc. BUK7Y4R4-40E.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2781 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4024 шт:
термін постачання 21-31 дні (днів)
5+75.17 грн
10+55.84 грн
100+44.52 грн
500+38.72 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BUK7Y65-100EX BUK7Y65-100EX Nexperia USA Inc. BUK7Y65-100E.pdf Description: MOSFET N-CH 100V 19A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4184 шт:
термін постачання 21-31 дні (днів)
6+64.44 грн
10+42.64 грн
100+28.45 грн
500+22.86 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK9Y107-80EX BUK9Y107-80EX Nexperia USA Inc. BUK9Y107-80E.pdf Description: MOSFET N-CH 80V 11.8A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V
Qualification: AEC-Q101
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
7+47.91 грн
10+40.01 грн
100+27.69 грн
500+21.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BUK9Y11-80EX BUK9Y11-80EX Nexperia USA Inc. BUK9Y11-80E.pdf Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1013 шт:
термін постачання 21-31 дні (днів)
3+113.17 грн
10+90.69 грн
100+72.18 грн
500+57.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9Y12-100E,115 BUK9Y12-100E,115 Nexperia USA Inc. BUK9Y12-100E.pdf Description: MOSFET N-CH 100V 85A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 5V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7973 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)
2+165.22 грн
10+103.02 грн
100+70.22 грн
500+52.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9Y12-40E,115 BUK9Y12-40E,115 Nexperia USA Inc. BUK9Y12-40E.pdf Description: MOSFET N-CH 40V 52A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2807 шт:
термін постачання 21-31 дні (днів)
10+35.52 грн
11+30.31 грн
100+22.73 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BUK9Y21-40E,115 BUK9Y21-40E,115 Nexperia USA Inc. BUK9Y21-40E.pdf Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 824 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5823 шт:
термін постачання 21-31 дні (днів)
6+61.96 грн
10+42.08 грн
100+28.96 грн
500+22.65 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK9Y65-100E,115 BUK9Y65-100E,115 Nexperia USA Inc. BUK9Y65-100E.pdf Description: MOSFET N-CH 100V 19A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 63.3mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1523 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
4+106.57 грн
10+64.20 грн
50+47.63 грн
100+39.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK9Y8R5-80EX BUK9Y8R5-80EX Nexperia USA Inc. BUK9Y8R5-80E.pdf Description: MOSFET N-CH 80V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8167 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4357 шт:
термін постачання 21-31 дні (днів)
3+163.57 грн
10+107.23 грн
100+76.51 грн
500+59.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9Y8R7-60E,115 BUK9Y8R7-60E,115 Nexperia USA Inc. BUK9Y8R7-60E.pdf Description: MOSFET N-CH 60V 86A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
4+94.17 грн
10+73.98 грн
100+57.54 грн
500+45.77 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PSMN013-100YSEX PSMN013-100YSEX Nexperia USA Inc. PSMN013-100YSE.pdf Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
на замовлення 30363 шт:
термін постачання 21-31 дні (днів)
3+143.74 грн
10+96.81 грн
100+76.63 грн
500+57.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN2R0-30YLE,115 PSMN2R0-30YLE,115 Nexperia USA Inc. PSMN2R0-30YLE.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)
4+90.87 грн
10+71.28 грн
100+61.13 грн
500+56.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PMBT2222A,235 PMBT2222A,235 Nexperia USA Inc. PMBT2222A.pdf Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 11667 шт:
термін постачання 21-31 дні (днів)
27+12.39 грн
45+7.08 грн
64+5.00 грн
100+4.07 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BAS21SW,115 BAS21SW,115 Nexperia USA Inc. BAS21SW.pdf Description: DIODE ARRAY GP 250V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q100
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
15+22.30 грн
25+13.05 грн
50+9.34 грн
100+7.62 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BC857C,235 BC857C,235 Nexperia USA Inc. BC856_BC857_BC858.pdf Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BSR16,215 BSR16,215 Nexperia USA Inc. BSR16.pdf Description: TRANS PNP 60V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 1797 шт:
термін постачання 21-31 дні (днів)
9+37.17 грн
15+21.64 грн
50+15.58 грн
100+12.77 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSS138BK,215 BSS138BK,215 Nexperia USA Inc. BSS138BK.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS138P,215 BSS138P,215 Nexperia USA Inc. BSS138P.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS138PW,115 BSS138PW,115 Nexperia USA Inc. BSS138PW.pdf Description: MOSFET N-CH 60V 320MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS84AK,215 BSS84AK,215 Nexperia USA Inc. BSS84AK.pdf Description: MOSFET P-CH 50V 180MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZX384-C24,115 BZX384-C24,115 Nexperia USA Inc. BZX384_SER.pdf Description: DIODE ZENER 24V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
на замовлення 30067 шт:
термін постачання 21-31 дні (днів)
31+10.74 грн
50+6.36 грн
100+3.89 грн
500+2.64 грн
1000+2.32 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
BZX384-C4V3,115 BZX384-C4V3,115 Nexperia USA Inc. BZX384_SER.pdf Description: DIODE ZENER 4.3V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 24541 шт:
термін постачання 21-31 дні (днів)
45+7.43 грн
87+3.66 грн
137+2.32 грн
500+1.99 грн
1000+1.86 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
NX2301P,215 NX2301P,215 Nexperia USA Inc. NX2301P.pdf Description: MOSFET P-CH 20V 2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 400mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 6 V
Qualification: AEC-Q101
на замовлення 68414 шт:
термін постачання 21-31 дні (днів)
16+20.65 грн
27+11.93 грн
100+9.04 грн
500+6.64 грн
1000+5.14 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
NX3008NBKV,115 NX3008NBKV,115 Nexperia USA Inc. NX3008NBKV.pdf Description: MOSFET 2N-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
9+38.00 грн
15+22.43 грн
50+16.21 грн
100+13.31 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PESD24VS1UA,115 PESD24VS1UA,115 Nexperia USA Inc. PESD24VS1UA.pdf Description: TVS DIODE 24VWM 70VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 70V
Power - Peak Pulse: 160W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15747 шт:
термін постачання 21-31 дні (днів)
12+29.74 грн
19+17.42 грн
100+10.96 грн
500+7.67 грн
1000+6.82 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
PMV160UP,215 PMV160UP,215 Nexperia USA Inc. PMV160UP.pdf Description: MOSFET P-CH 20V 1.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 335mW (Ta), 2.17W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
на замовлення 84584 шт:
термін постачання 21-31 дні (днів)
10+33.04 грн
17+19.65 грн
100+12.39 грн
500+8.67 грн
1000+7.72 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
PMV32UP,215 PMV32UP,215 Nexperia USA Inc. PMV32UP.pdf Description: MOSFET P-CH 20V 4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
на замовлення 3722 шт:
термін постачання 21-31 дні (днів)
11+30.57 грн
14+24.34 грн
100+16.59 грн
500+11.25 грн
1000+10.42 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
PUMD10,115 PUMD10,115 Nexperia USA Inc. PUMD10.pdf Description: TRANS PREBIAS 1NPN 1PNP 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
16+21.48 грн
26+12.33 грн
50+8.83 грн
100+7.20 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
74HCT03PW-Q100J 74HCT03PW-Q100J Nexperia USA Inc. 74HC_HCT03_Q100.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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74HCT04DB-Q100J Nexperia USA Inc. 74HC_HCT04_Q100.pdf Description: IC INVERTER 6CH 1-INP 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
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74HCT08D/AUJ 74HCT08D/AUJ Nexperia USA Inc. 74HC_HCT08.pdf Description: IC GATE AND 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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74HCT151D/AUJ 74HCT151D/AUJ Nexperia USA Inc. 74HC_HCT151.pdf Description: IC MULTIPLEXER 1 X 8:1 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
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74HCT163D-Q100J 74HCT163D-Q100J Nexperia USA Inc. 74HC_HCT163_Q100.pdf Description: IC BINARY COUNTER 4-BIT 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SO
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 50 MHz
Number of Bits per Element: 4
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74HCT257D/AUJ 74HCT257D/AUJ Nexperia USA Inc. 74HC_HCT257.pdf Description: IC MULTIPLEXER 4 X 2:1 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Active
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74HCT273D-Q100J 74HCT273D-Q100J Nexperia USA Inc. 74HC_HCT273_Q100.pdf Description: IC FF D-TYPE SINGLE 8-BIT 20-SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 36 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-SO
Max Propagation Delay @ V, Max CL: 30ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Bits per Element: 8
Qualification: AEC-Q100
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74HCT4060DB-Q100J 74HCT4060DB-Q100J Nexperia USA Inc. 74HC_HCT4060_Q100.pdf Description: IC BINARY COUNTER 12-BIT 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SSOP
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 88 MHz
Number of Bits per Element: 14
Grade: Automotive
Qualification: AEC-Q100
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74HCT541D-Q100J 74HCT541D-Q100J Nexperia USA Inc. 74HC_HCT541_Q100.pdf Description: IC BUFFER NON-INVERT 5.5V 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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74HCT573DB-Q100J 74HCT573DB-Q100J Nexperia USA Inc. 74HC_HCT573_Q100.pdf Description: IC D-TYPE TRANSP SGL 8:8 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 15ns
Supplier Device Package: 20-SSOP
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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74HCT595DB-Q100J 74HCT595DB-Q100J Nexperia USA Inc. 74HC_HCT595_Q100.pdf Description: IC SR TRI-STATE 8BIT 16-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-SSOP
Grade: Automotive
Part Status: Obsolete
Number of Bits per Element: 8
Qualification: AEC-Q100
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74HCT125D/AUJ 74HCT125D/AUJ Nexperia USA Inc. 74HC_HCT125.pdf Description: IC BUFFER NON-INVERT 5.5V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-SO
Part Status: Active
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74AHCT02D-Q100J 74AHCT02D-Q100J Nexperia USA Inc. 74AHC_AHCT02_Q100.pdf Description: IC GATE NOR 4CH 2-INP 14SO
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74AHCT240PW-Q100J 74AHCT240PW-Q100J Nexperia USA Inc. 74AHCT240_Q100.pdf Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+24.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74HC05PW,112 74HC05PW,112 Nexperia USA Inc. 74HC05.pdf Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tube
Features: Open Drain
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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74AHC3G14GD-Q100H 74AHC3G14GD-Q100H Nexperia USA Inc. Description: IC INVERT SCHMITT 3CH 3-IN 8XSON
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74AUP1G32GW-Q100H 74AUP1G32GW-Q100H Nexperia USA Inc. 74AUP1G32_Q100.pdf Description: IC GATE OR 1CH 2-INP 5TSSOP
товару немає в наявності
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PSMN3R9-60PSQ PSMN3R9-60PS.pdf
PSMN3R9-60PSQ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 4023 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+257.74 грн
10+222.74 грн
100+182.52 грн
500+145.81 грн
1000+122.97 грн
2000+116.82 грн
Мінімальне замовлення: 2
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BUK7613-100E,118 BUK7613-100E.pdf
BUK7613-100E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Qualification: AEC-Q101
на замовлення 6320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+244.52 грн
10+152.89 грн
100+105.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK761R7-40E,118 BUK761R7-40E.pdf
BUK761R7-40E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Qualification: AEC-Q101
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BUK9611-80E,118 BUK9611-80E.pdf
BUK9611-80E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3055 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+242.87 грн
10+151.94 грн
100+105.21 грн
Мінімальне замовлення: 2
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BUK962R8-60E,118 BUK962R8-60E.pdf
BUK962R8-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+338.70 грн
10+215.10 грн
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BUK963R1-40E,118 BUK963R1-40E.pdf
BUK963R1-40E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK963R3-60E,118 BUK963R3-60E.pdf
BUK963R3-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3870 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+295.74 грн
10+196.73 грн
100+138.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK964R2-60E,118 BUK964R2-60E.pdf
BUK964R2-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PSMN1R5-30BLEJ PSMN1R5-30BLE.pdf
PSMN1R5-30BLEJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 401W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+485.74 грн
10+311.99 грн
50+245.04 грн
100+209.75 грн
В кошику  од. на суму  грн.
PSMN3R4-30BLE,118 PSMN3R4-30BLE.pdf
PSMN3R4-30BLE,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
на замовлення 3228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.96 грн
10+93.47 грн
100+79.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN4R8-100BSEJ PSMN4R8-100BSE.pdf
PSMN4R8-100BSEJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+436.18 грн
10+278.50 грн
50+217.73 грн
100+185.98 грн
В кошику  од. на суму  грн.
PSMN7R6-100BSEJ PSMN7R6-100BSE.pdf
PSMN7R6-100BSEJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 296W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
на замовлення 4817 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+298.22 грн
10+192.43 грн
100+135.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK7Y12-40EX BUK7Y12-40E.pdf
BUK7Y12-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2704 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.30 грн
10+70.80 грн
50+52.65 грн
100+43.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7Y21-40EX BUK7Y21-40E.pdf
BUK7Y21-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 617 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2686 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.57 грн
10+52.18 грн
50+38.47 грн
100+31.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK7Y38-100EX BUK7Y38-100E.pdf
BUK7Y38-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2784 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.48 грн
10+70.48 грн
50+52.41 грн
100+43.70 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7Y4R4-40EX BUK7Y4R4-40E.pdf
BUK7Y4R4-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2781 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4024 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.17 грн
10+55.84 грн
100+44.52 грн
500+38.72 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BUK7Y65-100EX BUK7Y65-100E.pdf
BUK7Y65-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 19A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+64.44 грн
10+42.64 грн
100+28.45 грн
500+22.86 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK9Y107-80EX BUK9Y107-80E.pdf
BUK9Y107-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 11.8A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 25 V
Qualification: AEC-Q101
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.91 грн
10+40.01 грн
100+27.69 грн
500+21.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BUK9Y11-80EX BUK9Y11-80E.pdf
BUK9Y11-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1013 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.17 грн
10+90.69 грн
100+72.18 грн
500+57.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9Y12-100E,115 BUK9Y12-100E.pdf
BUK9Y12-100E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 85A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 5V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7973 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.22 грн
10+103.02 грн
100+70.22 грн
500+52.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9Y12-40E,115 BUK9Y12-40E.pdf
BUK9Y12-40E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2807 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.52 грн
11+30.31 грн
100+22.73 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BUK9Y21-40E,115 BUK9Y21-40E.pdf
BUK9Y21-40E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 824 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5823 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.96 грн
10+42.08 грн
100+28.96 грн
500+22.65 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK9Y65-100E,115 BUK9Y65-100E.pdf
BUK9Y65-100E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 19A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 63.3mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1523 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+106.57 грн
10+64.20 грн
50+47.63 грн
100+39.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK9Y8R5-80EX BUK9Y8R5-80E.pdf
BUK9Y8R5-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8167 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4357 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+163.57 грн
10+107.23 грн
100+76.51 грн
500+59.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9Y8R7-60E,115 BUK9Y8R7-60E.pdf
BUK9Y8R7-60E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 86A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.17 грн
10+73.98 грн
100+57.54 грн
500+45.77 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PSMN013-100YSEX PSMN013-100YSE.pdf
PSMN013-100YSEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
на замовлення 30363 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+143.74 грн
10+96.81 грн
100+76.63 грн
500+57.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN2R0-30YLE,115 PSMN2R0-30YLE.pdf
PSMN2R0-30YLE,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
на замовлення 3950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.87 грн
10+71.28 грн
100+61.13 грн
500+56.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PMBT2222A,235 PMBT2222A.pdf
PMBT2222A,235
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 11667 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.39 грн
45+7.08 грн
64+5.00 грн
100+4.07 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BAS21SW,115 BAS21SW.pdf
BAS21SW,115
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY GP 250V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q100
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+22.30 грн
25+13.05 грн
50+9.34 грн
100+7.62 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BC857C,235 BC856_BC857_BC858.pdf
BC857C,235
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BSR16,215 BSR16.pdf
BSR16,215
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 1797 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.17 грн
15+21.64 грн
50+15.58 грн
100+12.77 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSS138BK,215 BSS138BK.pdf
BSS138BK,215
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS138P,215 BSS138P.pdf
BSS138P,215
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS138PW,115 BSS138PW.pdf
BSS138PW,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 320MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS84AK,215 BSS84AK.pdf
BSS84AK,215
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 50V 180MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZX384-C24,115 BZX384_SER.pdf
BZX384-C24,115
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 24V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
на замовлення 30067 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+10.74 грн
50+6.36 грн
100+3.89 грн
500+2.64 грн
1000+2.32 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
BZX384-C4V3,115 BZX384_SER.pdf
BZX384-C4V3,115
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 4.3V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 24541 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
45+7.43 грн
87+3.66 грн
137+2.32 грн
500+1.99 грн
1000+1.86 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
NX2301P,215 NX2301P.pdf
NX2301P,215
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 400mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 6 V
Qualification: AEC-Q101
на замовлення 68414 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+20.65 грн
27+11.93 грн
100+9.04 грн
500+6.64 грн
1000+5.14 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
NX3008NBKV,115 NX3008NBKV.pdf
NX3008NBKV,115
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.00 грн
15+22.43 грн
50+16.21 грн
100+13.31 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PESD24VS1UA,115 PESD24VS1UA.pdf
PESD24VS1UA,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 24VWM 70VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 70V
Power - Peak Pulse: 160W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15747 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.74 грн
19+17.42 грн
100+10.96 грн
500+7.67 грн
1000+6.82 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
PMV160UP,215 PMV160UP.pdf
PMV160UP,215
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 335mW (Ta), 2.17W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
на замовлення 84584 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.04 грн
17+19.65 грн
100+12.39 грн
500+8.67 грн
1000+7.72 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
PMV32UP,215 PMV32UP.pdf
PMV32UP,215
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
на замовлення 3722 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.57 грн
14+24.34 грн
100+16.59 грн
500+11.25 грн
1000+10.42 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
PUMD10,115 PUMD10.pdf
PUMD10,115
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.48 грн
26+12.33 грн
50+8.83 грн
100+7.20 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
74HCT03PW-Q100J 74HC_HCT03_Q100.pdf
74HCT03PW-Q100J
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
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74HCT04DB-Q100J 74HC_HCT04_Q100.pdf
Виробник: Nexperia USA Inc.
Description: IC INVERTER 6CH 1-INP 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
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74HCT08D/AUJ 74HC_HCT08.pdf
74HCT08D/AUJ
Виробник: Nexperia USA Inc.
Description: IC GATE AND 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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74HCT151D/AUJ 74HC_HCT151.pdf
74HCT151D/AUJ
Виробник: Nexperia USA Inc.
Description: IC MULTIPLEXER 1 X 8:1 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
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74HCT163D-Q100J 74HC_HCT163_Q100.pdf
74HCT163D-Q100J
Виробник: Nexperia USA Inc.
Description: IC BINARY COUNTER 4-BIT 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SO
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 50 MHz
Number of Bits per Element: 4
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74HCT257D/AUJ 74HC_HCT257.pdf
74HCT257D/AUJ
Виробник: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Active
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74HCT273D-Q100J 74HC_HCT273_Q100.pdf
74HCT273D-Q100J
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 8-BIT 20-SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 36 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-SO
Max Propagation Delay @ V, Max CL: 30ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Bits per Element: 8
Qualification: AEC-Q100
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74HCT4060DB-Q100J 74HC_HCT4060_Q100.pdf
74HCT4060DB-Q100J
Виробник: Nexperia USA Inc.
Description: IC BINARY COUNTER 12-BIT 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SSOP
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 88 MHz
Number of Bits per Element: 14
Grade: Automotive
Qualification: AEC-Q100
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74HCT541D-Q100J 74HC_HCT541_Q100.pdf
74HCT541D-Q100J
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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74HCT573DB-Q100J 74HC_HCT573_Q100.pdf
74HCT573DB-Q100J
Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP SGL 8:8 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 15ns
Supplier Device Package: 20-SSOP
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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74HCT595DB-Q100J 74HC_HCT595_Q100.pdf
74HCT595DB-Q100J
Виробник: Nexperia USA Inc.
Description: IC SR TRI-STATE 8BIT 16-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-SSOP
Grade: Automotive
Part Status: Obsolete
Number of Bits per Element: 8
Qualification: AEC-Q100
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74HCT125D/AUJ 74HC_HCT125.pdf
74HCT125D/AUJ
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-SO
Part Status: Active
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74AHCT02D-Q100J 74AHC_AHCT02_Q100.pdf
74AHCT02D-Q100J
Виробник: Nexperia USA Inc.
Description: IC GATE NOR 4CH 2-INP 14SO
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74AHCT240PW-Q100J 74AHCT240_Q100.pdf
74AHCT240PW-Q100J
Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+24.10 грн
Мінімальне замовлення: 2500
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74HC05PW,112 74HC05.pdf
74HC05PW,112
Виробник: Nexperia USA Inc.
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tube
Features: Open Drain
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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74AHC3G14GD-Q100H
74AHC3G14GD-Q100H
Виробник: Nexperia USA Inc.
Description: IC INVERT SCHMITT 3CH 3-IN 8XSON
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74AUP1G32GW-Q100H 74AUP1G32_Q100.pdf
74AUP1G32GW-Q100H
Виробник: Nexperia USA Inc.
Description: IC GATE OR 1CH 2-INP 5TSSOP
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