Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (31403) > Сторінка 122 з 524
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NX3008NBKW,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 350MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 60502 шт: термін постачання 21-31 дні (днів) |
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NX3008PBK,215 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 230MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 26097 шт: термін постачання 21-31 дні (днів) |
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NX3008PBKS,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.2A 6TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 8432 шт: термін постачання 21-31 дні (днів) |
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NX3008PBKV,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.22A SOT666Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 8580 шт: термін постачання 21-31 дні (днів) |
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NX3008PBKW,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 200MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 22931 шт: термін постачання 21-31 дні (днів) |
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NX3020NAK,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 200MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V |
на замовлення 76749 шт: термін постачання 21-31 дні (днів) |
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NX3020NAKS,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.18A 6TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active |
на замовлення 3240 шт: термін постачання 21-31 дні (днів) |
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NX3020NAKV,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.2A SOT666Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-666 |
на замовлення 231598 шт: термін постачання 21-31 дні (днів) |
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NX3020NAKW,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 180MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 260mW (Ta), 1.1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V |
на замовлення 11320 шт: термін постачання 21-31 дні (днів) |
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NX7002AK,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 190MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 265mW (Ta), 1.33W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 24538 шт: термін постачання 21-31 дні (днів) |
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NX7002AKS,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 0.17A 6TSSOPCurrent - Continuous Drain (Id) @ 25°C: 170mA Drain to Source Voltage (Vdss): 60V Power - Max: 220mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 6-TSSOP Vgs(th) (Max) @ Id: 2.1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V |
на замовлення 5345 шт: термін постачання 21-31 дні (днів) |
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NX7002AKW,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 170MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 220mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 14910 шт: термін постачання 21-31 дні (днів) |
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PBSS2515MB,315 | Nexperia USA Inc. |
Description: TRANS NPN 15V 0.5A DFN1006B-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 420MHz Supplier Device Package: DFN1006B-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PBSS2540MB,315 | Nexperia USA Inc. |
Description: TRANS NPN 40V 0.5A DFN1006B-3Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Power - Max: 250 mW Qualification: AEC-Q100 Grade: Automotive Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: DFN1006B-3 Frequency - Transition: 450MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Current - Collector Cutoff (Max): 100µA (ICBO) |
на замовлення 9324 шт: термін постачання 21-31 дні (днів) |
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PBSS3515MB,315 | Nexperia USA Inc. |
Description: TRANS PNP 15V 0.5A DFN1006B-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 280MHz Supplier Device Package: DFN1006B-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1931 шт: термін постачання 21-31 дні (днів) |
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PBSS4240XF | Nexperia USA Inc. |
Description: TRANS NPN 40V 2A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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PBSS5240XF | Nexperia USA Inc. |
Description: TRANS PNP 40V 2A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 8649 шт: термін постачання 21-31 дні (днів) |
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PESD12VS1ULD,315 | Nexperia USA Inc. |
Description: TVS DIODE 12VWM 35VC DFN1006D-2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 38pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: DFN1006D-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.7V Voltage - Clamping (Max) @ Ipp: 35V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD12VV1BL,315 | Nexperia USA Inc. |
Description: TVS DIODE 12VWM 38VC DFN1006-2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 17pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.8A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.6V Voltage - Clamping (Max) @ Ipp: 38V Power - Peak Pulse: 290W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD15VS1ULD,315 | Nexperia USA Inc. |
Description: TVS DIODE 15VWM 40VC DFN1006D-2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 32pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: DFN1006D-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.6V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD1CAN-UX | Nexperia USA Inc. |
Description: TVS DIODE 24VWM 50VC SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: CAN Capacitance @ Frequency: 9.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-323 Bidirectional Channels: 2 Voltage - Breakdown (Min): 25.4V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2396 шт: термін постачання 21-31 дні (днів) |
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PESD1LVDS,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM DFN2510-10Packaging: Cut Tape (CT) Package / Case: 10-XFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: DFN2510-10 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Power Line Protection: Yes Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 34564 шт: термін постачання 21-31 дні (днів) |
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PESD36VS1UL,315 | Nexperia USA Inc. |
Description: TVS DIODE 36VWM 80VC DFN1006-2Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 80V Voltage - Breakdown (Min): 38.2V Unidirectional Channels: 1 Supplier Device Package: DFN1006-2 Voltage - Reverse Standoff (Typ): 36V (Max) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 18pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 189527 шт: термін постачання 21-31 дні (днів) |
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PESD5V0F1BRSFYL | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 12.8VC DSN0603-2Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.25pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DSN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12.8V Power - Peak Pulse: 28W Power Line Protection: No Part Status: Active |
на замовлення 1009 шт: термін постачання 21-31 дні (днів) |
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PESD5V0F1USF,315 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 10VC DSN0603-2Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 10V Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: DSN0603-2 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 0.6pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Cut Tape (CT) |
на замовлення 10516 шт: термін постачання 21-31 дні (днів) |
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PESD5V0F5UV,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.5V 15V SOT666 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD5V0L2UMB,315 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 15VC DFN1006B-3Voltage - Clamping (Max) @ Ipp: 15V Voltage - Breakdown (Min): 6.46V Unidirectional Channels: 2 Supplier Device Package: DFN1006B-3 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 16pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Part Status: Active Power Line Protection: No Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD5V0X1BCAL,315 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 17VC DFN1006-2Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 17V Voltage - Breakdown (Min): 8.1V Bidirectional Channels: 1 Supplier Device Package: DFN1006-2 Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 1.8A (8/20µs) Capacitance @ Frequency: 0.85pF @ 1MHz Operating Temperature: -65°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Cut Tape (CT) |
на замовлення 8684 шт: термін постачання 21-31 дні (днів) |
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PESD5V0X1UAB,115 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 9VC SOD523Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 9V (Typ) Voltage - Breakdown (Min): 5.8V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 2A (8/20µs) Capacitance @ Frequency: 1.55pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 62983 шт: термін постачання 21-31 дні (днів) |
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PESD5V0X1UALD,315 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 9VC DFN1006D-2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 1.55pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006D-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 9V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1160 шт: термін постачання 21-31 дні (днів) |
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PMCPB5530X,115 | Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 4A 6HUSONPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 490mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMDPB30XN,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSONPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMDPB70XPE,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3A 6HUSONPart Status: Active Supplier Device Package: 6-HUSON (2x2) Vgs(th) (Max) @ Id: 1.25V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3A Drain to Source Voltage (Vdss): 20V Power - Max: 515mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3004 шт: термін постачання 21-31 дні (днів) |
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PMDT290UCE,115 | Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.8A SOT666Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8784 шт: термін постачання 21-31 дні (днів) |
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PMDT290UNE,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.8A SOT666Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 67965 шт: термін постачання 21-31 дні (днів) |
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PMDT670UPE,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 0.55A SOT666Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 550mA Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3178 шт: термін постачання 21-31 дні (днів) |
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PMEG2005EPK,315 | Nexperia USA Inc. |
Description: DIODE SCHOTT 20V 500MA DFN1608D2Supplier Device Package: DFN1608D-2 Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 35pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 3 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 130 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: 150°C (Max) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG2010EPK,315 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 1A DFN1608D-2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Schottky Capacitance @ Vr, F: 65pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DFN1608D-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A Current - Reverse Leakage @ Vr: 600 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2834 шт: термін постачання 21-31 дні (днів) |
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PMEG2020EPK,315 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2Current - Reverse Leakage @ Vr: 900 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1608D-2 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 120pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6989 шт: термін постачання 21-31 дні (днів) |
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PMEG4005EPK,315 | Nexperia USA Inc. |
Description: DIODE SCHOTT 40V 500MA DFN1608D2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 ns Technology: Schottky Capacitance @ Vr, F: 30pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DFN1608D-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA Current - Reverse Leakage @ Vr: 2 µA @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG4010EPK,315 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 1A DFN1608D-2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 60pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DFN1608D-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG4010ETR,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 1A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.4 ns Technology: Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 14156 шт: термін постачання 21-31 дні (днів) |
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PMEG4020EPK,315 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 2A DFN1608D-2Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 5 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1608D-2 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 90pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Cut Tape (CT) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PMEG6002ELDYL | Nexperia USA Inc. |
Description: DIODE SCHOTT 60V 200MA DFN1006D2Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1006D-2 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 20pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 4.5 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Packaging: Cut Tape (CT) |
на замовлення 22883 шт: термін постачання 21-31 дні (днів) |
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PMEG6010ETR,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 1A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.4 ns Technology: Schottky Capacitance @ Vr, F: 120pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 60 µA @ 60 V |
на замовлення 10976 шт: термін постачання 21-31 дні (днів) |
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PMEG6020ETR,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.5 ns Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2 Voltage Coupled to Current - Reverse Leakage @ Vr: 60 |
на замовлення 242 шт: термін постачання 21-31 дні (днів) |
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PMEG6030ETPX | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5Current - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-128/CFP5 Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 360pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 12 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
на замовлення 17820 шт: термін постачання 21-31 дні (днів) |
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PMEG6030EVPX | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 575pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG6045ETPX | Nexperia USA Inc. |
Description: DIODE SCHOT 60V 4.5A SOD128/CFP5Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 575pF @ 1V, 1MHz Current - Average Rectified (Io): 4.5A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 4.5 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMFPB8032XP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.7A HUSON6Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Obsolete Supplier Device Package: 6-HUSON (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 485mW (Ta), 6.25W (Tc) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 20 V |
на замовлення 93 шт: термін постачання 21-31 дні (днів) |
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PMN27UP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5.7A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 2.4A, 4.5V Power Dissipation (Max): 540mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMPB20XPE,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V |
на замовлення 6214 шт: термін постачання 21-31 дні (днів) |
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PMPB47XP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 4A DFN2020MD-6Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMV33UPE,215 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4.4A TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V |
на замовлення 35021 шт: термін постачання 21-31 дні (днів) |
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PMV50UPE,215 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 3.2A TO236ABInput Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 4531 шт: термін постачання 21-31 дні (днів) |
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PTVS10VP1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 10VWM 17V SOD128/CFP5Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 17V Voltage - Breakdown (Min): 11.1V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 10V Current - Peak Pulse (10/1000µs): 35.3A Operating Temperature: -55°C ~ 185°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PTVS10VS1UTR,115 | Nexperia USA Inc. |
Description: TVS DIODE 10VWM 17VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 23.5A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1747 шт: термін постачання 21-31 дні (днів) |
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PTVS14VS1UTR,115 | Nexperia USA Inc. |
Description: TVS DIODE 14VWM 23.2VC SOD123WQualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 23.2V Voltage - Breakdown (Min): 15.6V Unidirectional Channels: 1 Supplier Device Package: SOD-123W Voltage - Reverse Standoff (Typ): 14V Current - Peak Pulse (10/1000µs): 17.2A Operating Temperature: -55°C ~ 185°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) |
на замовлення 7109 шт: термін постачання 21-31 дні (днів) |
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PTVS15VS1UTR,115 | Nexperia USA Inc. |
Description: TVS DIODE 15VWM 24.4VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 16.4A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2350 шт: термін постачання 21-31 дні (днів) |
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PTVS22VP1UTP,115 | Nexperia USA Inc. |
Description: TVS DIODE 22VWM 35.5VC SOD1285Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 35.5V Voltage - Breakdown (Min): 24.4V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 22V Current - Peak Pulse (10/1000µs): 16.9A Operating Temperature: -55°C ~ 185°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| NX3008NBKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 350MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 350MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Qualification: AEC-Q101
на замовлення 60502 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 14.93 грн |
| 35+ | 8.85 грн |
| 100+ | 5.47 грн |
| 500+ | 3.75 грн |
| 1000+ | 3.30 грн |
| NX3008PBK,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 230MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 230MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
на замовлення 26097 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.14 грн |
| 37+ | 8.40 грн |
| 100+ | 5.18 грн |
| 500+ | 3.54 грн |
| 1000+ | 3.12 грн |
| NX3008PBKS,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 0.2A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 0.2A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 8432 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.35 грн |
| 22+ | 14.22 грн |
| 100+ | 8.93 грн |
| 500+ | 6.20 грн |
| 1000+ | 5.50 грн |
| NX3008PBKV,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 0.22A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 0.22A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 8580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.85 грн |
| 18+ | 17.63 грн |
| 100+ | 11.12 грн |
| 500+ | 7.78 грн |
| 1000+ | 6.92 грн |
| 2000+ | 6.20 грн |
| NX3008PBKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
на замовлення 22931 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.71 грн |
| 34+ | 9.00 грн |
| 100+ | 5.56 грн |
| 500+ | 3.81 грн |
| 1000+ | 3.36 грн |
| NX3020NAK,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
Description: MOSFET N-CH 30V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
на замовлення 76749 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.78 грн |
| 38+ | 8.02 грн |
| 100+ | 4.08 грн |
| 500+ | 3.18 грн |
| 1000+ | 2.52 грн |
| NX3020NAKS,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 3240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.64 грн |
| 27+ | 11.35 грн |
| 100+ | 7.08 грн |
| 500+ | 4.90 грн |
| 1000+ | 4.33 грн |
| NX3020NAKV,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
на замовлення 231598 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.85 грн |
| 18+ | 17.70 грн |
| 100+ | 11.14 грн |
| 500+ | 7.79 грн |
| 1000+ | 6.93 грн |
| 2000+ | 6.21 грн |
| NX3020NAKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 180MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 260mW (Ta), 1.1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
Description: MOSFET N-CH 30V 180MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 260mW (Ta), 1.1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
на замовлення 11320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.35 грн |
| 39+ | 7.94 грн |
| 100+ | 4.88 грн |
| 500+ | 3.33 грн |
| 1000+ | 2.93 грн |
| NX7002AK,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 24538 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.43 грн |
| 54+ | 5.67 грн |
| 100+ | 3.45 грн |
| 500+ | 2.34 грн |
| 1000+ | 2.04 грн |
| NX7002AKS,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Current - Continuous Drain (Id) @ 25°C: 170mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Current - Continuous Drain (Id) @ 25°C: 170mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 2.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
на замовлення 5345 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.50 грн |
| 32+ | 9.76 грн |
| 100+ | 6.04 грн |
| 500+ | 4.15 грн |
| 1000+ | 3.66 грн |
| NX7002AKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 170MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 220mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 170MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 220mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 14910 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 47+ | 6.51 грн |
| 100+ | 3.98 грн |
| 500+ | 2.71 грн |
| 1000+ | 2.37 грн |
| PBSS2515MB,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 15V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 15V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| PBSS2540MB,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.5A DFN1006B-3
Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Qualification: AEC-Q100
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: DFN1006B-3
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Description: TRANS NPN 40V 0.5A DFN1006B-3
Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Qualification: AEC-Q100
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: DFN1006B-3
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
на замовлення 9324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.21 грн |
| 25+ | 12.56 грн |
| 50+ | 8.93 грн |
| 100+ | 7.29 грн |
| PBSS3515MB,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 15V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 15V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1931 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.07 грн |
| 29+ | 10.51 грн |
| 100+ | 6.57 грн |
| 500+ | 4.53 грн |
| 1000+ | 4.00 грн |
| PBSS4240XF |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 40V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.49 грн |
| 14+ | 22.69 грн |
| PBSS5240XF |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 40V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 40V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.71 грн |
| 20+ | 15.89 грн |
| 100+ | 10.01 грн |
| 500+ | 6.99 грн |
| 1000+ | 6.22 грн |
| 2000+ | 5.56 грн |
| PESD12VS1ULD,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 35VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.7V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 35VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.7V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| PESD12VV1BL,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 38VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 290W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 38VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 290W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PESD15VS1ULD,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 15VWM 40VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.6V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15VWM 40VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.6V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PESD1CAN-UX |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 24VWM 50VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 9.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 50VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 9.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2396 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.92 грн |
| 14+ | 21.63 грн |
| 100+ | 13.68 грн |
| 500+ | 9.64 грн |
| 1000+ | 8.61 грн |
| PESD1LVDS,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM DFN2510-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM DFN2510-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 34564 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 84.84 грн |
| 10+ | 51.14 грн |
| 100+ | 33.58 грн |
| 500+ | 24.44 грн |
| 1000+ | 22.16 грн |
| 2000+ | 20.25 грн |
| PESD36VS1UL,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 36VWM 80VC DFN1006-2
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 80V
Voltage - Breakdown (Min): 38.2V
Unidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 18pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TVS DIODE 36VWM 80VC DFN1006-2
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 80V
Voltage - Breakdown (Min): 38.2V
Unidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 18pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 189527 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 45+ | 6.73 грн |
| 116+ | 2.62 грн |
| PESD5V0F1BRSFYL |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12.8VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.8V
Power - Peak Pulse: 28W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 12.8VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.8V
Power - Peak Pulse: 28W
Power Line Protection: No
Part Status: Active
на замовлення 1009 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.78 грн |
| 23+ | 13.31 грн |
| 100+ | 8.34 грн |
| 500+ | 5.79 грн |
| 1000+ | 5.14 грн |
| PESD5V0F1USF,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 10VC DSN0603-2
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: DSN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM 10VC DSN0603-2
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: DSN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
на замовлення 10516 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.07 грн |
| 73+ | 4.16 грн |
| PESD5V0F5UV,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5V 15V SOT666
Description: TVS DIODE 5.5V 15V SOT666
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| PESD5V0L2UMB,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 15VC DFN1006B-3
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.46V
Unidirectional Channels: 2
Supplier Device Package: DFN1006B-3
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 16pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Qualification: AEC-Q101
Grade: Automotive
Description: TVS DIODE 5VWM 15VC DFN1006B-3
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.46V
Unidirectional Channels: 2
Supplier Device Package: DFN1006B-3
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 16pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Qualification: AEC-Q101
Grade: Automotive
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| PESD5V0X1BCAL,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 17VC DFN1006-2
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 8.1V
Bidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.8A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Description: TVS DIODE 5.5VWM 17VC DFN1006-2
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 8.1V
Bidirectional Channels: 1
Supplier Device Package: DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.8A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
на замовлення 8684 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.21 грн |
| 24+ | 12.86 грн |
| 50+ | 9.21 грн |
| 100+ | 7.52 грн |
| PESD5V0X1UAB,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9VC SOD523
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TVS DIODE 5VWM 9VC SOD523
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 62983 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 12+ | 26.70 грн |
| 50+ | 19.37 грн |
| 100+ | 15.93 грн |
| PESD5V0X1UALD,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 1.55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 9VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 1.55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.78 грн |
| 23+ | 13.16 грн |
| 100+ | 8.26 грн |
| 500+ | 5.74 грн |
| 1000+ | 5.09 грн |
| PMCPB5530X,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
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| PMDPB30XN,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
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| PMDPB70XPE,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3A 6HUSON
Part Status: Active
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 515mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 3A 6HUSON
Part Status: Active
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 515mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3004 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.20 грн |
| 10+ | 32.00 грн |
| 50+ | 23.28 грн |
| 100+ | 19.21 грн |
| PMDT290UCE,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.8A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 0.8A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8784 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.71 грн |
| 14+ | 22.47 грн |
| 100+ | 14.32 грн |
| 500+ | 10.10 грн |
| 1000+ | 9.03 грн |
| 2000+ | 8.12 грн |
| PMDT290UNE,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 0.8A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 67965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.21 грн |
| 16+ | 19.21 грн |
| 100+ | 12.13 грн |
| 500+ | 8.51 грн |
| 1000+ | 7.58 грн |
| 2000+ | 6.80 грн |
| PMDT670UPE,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 0.55A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 550mA
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 20V 0.55A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 550mA
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3178 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 35.35 грн |
| 15+ | 20.80 грн |
| 100+ | 13.22 грн |
| 500+ | 9.30 грн |
| 1000+ | 8.30 грн |
| 2000+ | 7.45 грн |
| PMEG2005EPK,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 20V 500MA DFN1608D2
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 130 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTT 20V 500MA DFN1608D2
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 130 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
Qualification: AEC-Q101
Grade: Automotive
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| PMEG2010EPK,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1A DFN1608D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 1A DFN1608D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 415 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2834 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.14 грн |
| 15+ | 21.03 грн |
| 100+ | 13.22 грн |
| 500+ | 9.21 грн |
| 1000+ | 8.17 грн |
| 2000+ | 7.30 грн |
| PMEG2020EPK,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 18+ | 16.87 грн |
| 100+ | 10.67 грн |
| 500+ | 7.47 грн |
| 1000+ | 6.14 грн |
| 2000+ | 5.95 грн |
| PMEG4005EPK,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 40V 500MA DFN1608D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTT 40V 500MA DFN1608D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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| PMEG4010EPK,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DFN1608D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A DFN1608D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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| PMEG4010ETR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 14156 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.71 грн |
| 19+ | 16.11 грн |
| 100+ | 10.09 грн |
| 500+ | 7.03 грн |
| 1000+ | 6.25 грн |
| PMEG4020EPK,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 2A DFN1608D-2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 2A DFN1608D-2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.07 грн |
| 18+ | 17.10 грн |
| 100+ | 10.81 грн |
| 500+ | 7.57 грн |
| 1000+ | 6.74 грн |
| PMEG6002ELDYL |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 60V 200MA DFN1006D2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1006D-2
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 4.5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTT 60V 200MA DFN1006D2
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1006D-2
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 4.5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
на замовлення 22883 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.35 грн |
| 39+ | 7.87 грн |
| 100+ | 7.17 грн |
| 500+ | 4.72 грн |
| 1000+ | 4.27 грн |
| 2000+ | 4.19 грн |
| 5000+ | 3.84 грн |
| PMEG6010ETR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
на замовлення 10976 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.71 грн |
| 19+ | 16.04 грн |
| 100+ | 10.05 грн |
| 500+ | 7.00 грн |
| 1000+ | 6.22 грн |
| PMEG6020ETR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
на замовлення 242 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 17+ | 17.93 грн |
| 100+ | 11.32 грн |
| PMEG6030ETPX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 17820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.49 грн |
| 11+ | 29.35 грн |
| 100+ | 18.86 грн |
| 500+ | 13.43 грн |
| 1000+ | 12.05 грн |
| PMEG6030EVPX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SCHOTTK 60V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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| PMEG6045ETPX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOT 60V 4.5A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 4.5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 4.5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SCHOT 60V 4.5A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 4.5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 4.5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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| PMFPB8032XP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.7A HUSON6
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 2.7A HUSON6
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
на замовлення 93 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 84.05 грн |
| 10+ | 50.53 грн |
| 50+ | 37.23 грн |
| PMN27UP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 10 V
Description: MOSFET P-CH 20V 5.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 10 V
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| PMPB20XPE,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V
на замовлення 6214 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.70 грн |
| 11+ | 28.82 грн |
| 100+ | 18.54 грн |
| 500+ | 13.24 грн |
| 1000+ | 11.90 грн |
| PMPB47XP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4A DFN2020MD-6
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Description: MOSFET P-CH 30V 4A DFN2020MD-6
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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| PMV33UPE,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V
Description: MOSFET P-CH 20V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V
на замовлення 35021 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.56 грн |
| 10+ | 33.66 грн |
| 100+ | 21.79 грн |
| 500+ | 15.65 грн |
| 1000+ | 14.10 грн |
| PMV50UPE,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.2A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.2A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 4531 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.06 грн |
| 13+ | 23.60 грн |
| 50+ | 17.07 грн |
| 100+ | 14.01 грн |
| PTVS10VP1UTP,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17V SOD128/CFP5
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: TVS DIODE 10VWM 17V SOD128/CFP5
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| PTVS10VS1UTR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 10VWM 17VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1747 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.92 грн |
| 14+ | 21.86 грн |
| 100+ | 13.92 грн |
| 500+ | 9.84 грн |
| 1000+ | 8.80 грн |
| PTVS14VS1UTR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 14VWM 23.2VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Description: TVS DIODE 14VWM 23.2VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 23.2V
Voltage - Breakdown (Min): 15.6V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 14V
Current - Peak Pulse (10/1000µs): 17.2A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
на замовлення 7109 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.35 грн |
| 11+ | 27.61 грн |
| 50+ | 20.06 грн |
| 100+ | 16.51 грн |
| PTVS15VS1UTR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 15VWM 24.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15VWM 24.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.92 грн |
| 14+ | 21.86 грн |
| 100+ | 13.92 грн |
| 500+ | 9.84 грн |
| 1000+ | 8.80 грн |
| PTVS22VP1UTP,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 22VWM 35.5VC SOD1285
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: TVS DIODE 22VWM 35.5VC SOD1285
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 16.9A
Operating Temperature: -55°C ~ 185°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.



















