Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (31405) > Сторінка 192 з 524
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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74HCT109D-Q100J | Nexperia USA Inc. |
Description: IC FF JK TYPE DOUBLE 1BIT 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 81 MHz Input Capacitance: 3.5 pF Supplier Device Package: 16-SO Max Propagation Delay @ V, Max CL: 35ns @ 4.5V, 50pF Grade: Automotive Part Status: Active Number of Bits per Element: 1 Qualification: AEC-Q100 |
на замовлення 2436 шт: термін постачання 21-31 дні (днів) |
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74HCT10PW-Q100J | Nexperia USA Inc. |
Description: IC GATE NAND 3CH 3-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 3 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF Grade: Automotive Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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74HCT10PW-Q100J | Nexperia USA Inc. |
Description: IC GATE NAND 3CH 3-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 3 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF Grade: Automotive Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 6436 шт: термін постачання 21-31 дні (днів) |
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PESD1NFC-L315 | Nexperia USA Inc. | Description: TVS DIODE |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3206 шт В кошику од. на суму грн. | ||||||||||||||
| 74HC4050PW | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 6V 16TSSOP Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 5.2mA, 5.2mA Supplier Device Package: 16-TSSOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74AHCT373D,112 | Nexperia USA Inc. |
Description: IC D-TYPE TRANSP 8:8 20-SOPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 4ns Supplier Device Package: 20-SO |
на замовлення 10032 шт: термін постачання 21-31 дні (днів) |
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| 74AHC1G14GV | Nexperia USA Inc. |
Description: INVERTER, AHC/VHC/H/U/V SERIES, |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74LV132PW,118 | Nexperia USA Inc. |
Description: IC GATE NAND 4CH 2-INP 14TSSOPFeatures: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1V ~ 5.5V Current - Output High, Low: 12mA, 12mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.4V ~ 3.9V Input Logic Level - Low: 0.3V ~ 1.2V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 40 µA |
на замовлення 12250 шт: термін постачання 21-31 дні (днів) |
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| 74LV393D | Nexperia USA Inc. |
Description: NOW NEXPERIA 74LV132D - NAND GATPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZT52-C33,115 | Nexperia USA Inc. |
Description: ZENER DIODE, 33V, 5%, 0.41W, SILPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52-C33,118 | Nexperia USA Inc. |
Description: ZENER DIODEPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK7M42-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 20A LFPAK33Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BUK7M42-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 20A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4319 шт: термін постачання 21-31 дні (днів) |
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PBSS306PZ,135 | Nexperia USA Inc. |
Description: TRANS PNP 100V 4.1A SOT-223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 325mV @ 410mA, 4.1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 4.1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PBSS306PZ,135 | Nexperia USA Inc. |
Description: TRANS PNP 100V 4.1A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 325mV @ 410mA, 4.1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 4.1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W Qualification: AEC-Q100 |
на замовлення 510 шт: термін постачання 21-31 дні (днів) |
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PBSS306PX,115 | Nexperia USA Inc. |
Description: TRANS PNP 100V 3.7A SOT-89Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3.7 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2.1 W Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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PBSS306PX,115 | Nexperia USA Inc. |
Description: TRANS PNP 100V 3.7A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3.7 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2.1 W Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AUP1G386GS,132 | Nexperia USA Inc. |
Description: IC GATE XOR 1CH 3-INP 6XSONPackaging: Bulk Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 3 Supplier Device Package: 6-XSON, SOT1202 (1x1) Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PBSS4360PAS115 | Nexperia USA Inc. |
Description: NOW NEXPERIA PBSS4360PAS SMALL S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PBSS4360PAS115 | Nexperia USA Inc. |
Description: NOW NEXPERIA PBSS4360PAS SMALL S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CBTD16210DGG/S400, | Nexperia USA Inc. |
Description: IC BUS SWITCH 20BIT 48TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74HC3GU04DP,125 | Nexperia USA Inc. |
Description: IC INVERTER 3CH 3-INP 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 3 Supplier Device Package: 8-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 5ns @ 6V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 20 µA |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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LSF0102GXX | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 8-X2SONPackaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 8-X2SON (1.35x0.8) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0 V ~ 5 V Voltage - VCCB: 0 V ~ 5 V Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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NHDTA114YUF | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 80V SOT323Resistors Included: R1 and R2 Qualification: AEC-Q101 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 150 MHz Power - Max: 235 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
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74AUP1Z125GW,125 | Nexperia USA Inc. |
Description: IC INVERT/X-TAL DRVR 6-TSSOPPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: Inverter, X-Tal Driver Operating Temperature: -40°C ~ 125°C Supply Voltage: 0.8V ~ 3.6V Supplier Device Package: 6-TSSOP Part Status: Active |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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74AUP1Z125GW,125 | Nexperia USA Inc. |
Description: IC INVERT/X-TAL DRVR 6-TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: Inverter, X-Tal Driver Operating Temperature: -40°C ~ 125°C Supply Voltage: 0.8V ~ 3.6V Supplier Device Package: 6-TSSOP Part Status: Active |
на замовлення 44494 шт: термін постачання 21-31 дні (днів) |
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PBSS4032SN,115 | Nexperia USA Inc. |
Description: TRANS 2NPN DUAL 30V 5.7A 8-SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.3W Current - Collector (Ic) (Max): 5.7A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: 8-SO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AUP1T57GW,125 | Nexperia USA Inc. |
Description: IC XLTR VL UNIDIR 6-TSSOPNumber of Circuits: 1 Voltage - VCCB: 2.3 V ~ 3.6 V Voltage - VCCA: 1.8 V ~ 2.7 V Channels per Circuit: 1 Translator Type: Voltage Level Channel Type: Unidirectional Supplier Device Package: 6-TSSOP Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Single-Ended Package / Case: 6-TSSOP, SC-88, SOT-363 Features: Configurable Gate Logic Functions Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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74AUP1T57GW,125 | Nexperia USA Inc. |
Description: IC XLTR VL UNIDIR 6-TSSOPFeatures: Configurable Gate Logic Functions Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Single-Ended Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Supplier Device Package: 6-TSSOP Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.8 V ~ 2.7 V Voltage - VCCB: 2.3 V ~ 3.6 V Number of Circuits: 1 |
на замовлення 8964 шт: термін постачання 21-31 дні (днів) |
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74HCT9046APW118 | Nexperia USA Inc. |
Description: IC PHASE LOCK LOOP 16TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 19MHz Type: Phase Lock Loop (PLL) Input: Clock Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Ratio - Input:Output: 2:2 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes Divider/Multiplier: No/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 32160 шт: термін постачання 21-31 дні (днів) |
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PMEG3005ELD,315 | Nexperia USA Inc. |
Description: DIODE SCHOTT 30V 500MA DFN1006D2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Schottky Capacitance @ Vr, F: 30pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DFN1006D-2 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 500 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 89043 шт: термін постачання 21-31 дні (днів) |
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NHDTC123JUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
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NHDTC123JUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NHDTC123JUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 885 шт: термін постачання 21-31 дні (днів) |
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NHDTC123JTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NHDTC123JTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 20840 шт: термін постачання 21-31 дні (днів) |
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PMZB350UPE,315 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1A DFN1006B-3Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: DFN1006B-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
на замовлення 20021 шт: термін постачання 21-31 дні (днів) |
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BUK9Y6R5-40HX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 70A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2360 шт: термін постачання 21-31 дні (днів) |
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BUK6Y24-40PX | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 39A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 9012 шт: термін постачання 21-31 дні (днів) |
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BUK6Y61-60PX | Nexperia USA Inc. |
Description: MOSFET P-CH 60V 25A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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BUK6Y61-60PX | Nexperia USA Inc. |
Description: MOSFET P-CH 60V 25A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 1125 шт: термін постачання 21-31 дні (днів) |
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BUK6Y19-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 45A LFPAK56Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
на замовлення 9063 шт: термін постачання 21-31 дні (днів) |
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BUK6Y10-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 80A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK6Y10-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 80A LFPAK56Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 110W (Tc) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2941 шт: термін постачання 21-31 дні (днів) |
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BUK6Y14-40PX | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 64A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK6Y14-40PX | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 64A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN3R2-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.05V @ 1mA Power Dissipation (Max): 115W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN3R2-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.05V @ 1mA Power Dissipation (Max): 115W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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PSMN1R9-40YSDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 200A LFPAK56FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 194W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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PSMN1R9-40YSDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 200A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 194W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
на замовлення 918 шт: термін постачання 21-31 дні (днів) |
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PSMN1R7-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 200A LFPAK56Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7966 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.05V @ 1mA Power Dissipation (Max): 194W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 8240 шт: термін постачання 21-31 дні (днів) |
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PSMNR70-30YLHX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 2mA Power Dissipation (Max): 268W (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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PSMNR70-30YLHX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 2mA Power Dissipation (Max): 268W (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK7Y7R0-40HX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 68A LFPAK56Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PSMN1R5-40YSDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 240A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 238W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN1R5-40YSDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 240A LFPAK56Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 238W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
на замовлення 3896 шт: термін постачання 21-31 дні (днів) |
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BZV85-C75,133 | Nexperia USA Inc. |
Description: DIODE ZENER 75V 1.3W DO41Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 225 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 53 V |
на замовлення 60937 шт: термін постачання 21-31 дні (днів) |
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74HC4053DB118 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74HC4053DB - SINGLEPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX79-C7V5,143 | Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 400MW ALF2Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: ALF2 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX79-C7V5,133 | Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 400MW ALF2Current - Reverse Leakage @ Vr: 1 µA @ 5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 400 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 9800 шт: термін постачання 21-31 дні (днів) |
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| 74HCT109D-Q100J |
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Виробник: Nexperia USA Inc.
Description: IC FF JK TYPE DOUBLE 1BIT 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 81 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-SO
Max Propagation Delay @ V, Max CL: 35ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Bits per Element: 1
Qualification: AEC-Q100
Description: IC FF JK TYPE DOUBLE 1BIT 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 81 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-SO
Max Propagation Delay @ V, Max CL: 35ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Bits per Element: 1
Qualification: AEC-Q100
на замовлення 2436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.42 грн |
| 15+ | 21.11 грн |
| 25+ | 18.88 грн |
| 100+ | 15.36 грн |
| 250+ | 14.24 грн |
| 500+ | 13.57 грн |
| 1000+ | 12.87 грн |
| 74HCT10PW-Q100J |
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Виробник: Nexperia USA Inc.
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| 74HCT10PW-Q100J |
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Виробник: Nexperia USA Inc.
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 6436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 15+ | 20.20 грн |
| 25+ | 18.06 грн |
| 100+ | 14.70 грн |
| 250+ | 13.62 грн |
| 500+ | 12.97 грн |
| 1000+ | 12.27 грн |
| PESD1NFC-L315 |
Виробник: Nexperia USA Inc.
Description: TVS DIODE
Description: TVS DIODE
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| 74HC4050PW |
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 16-TSSOP
Part Status: Active
Description: IC BUFFER NON-INVERT 6V 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 16-TSSOP
Part Status: Active
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| 74AHCT373D,112 |
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Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-SO
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4ns
Supplier Device Package: 20-SO
Description: IC D-TYPE TRANSP 8:8 20-SO
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4ns
Supplier Device Package: 20-SO
на замовлення 10032 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 621+ | 32.45 грн |
| 74AHC1G14GV |
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Виробник: Nexperia USA Inc.
Description: INVERTER, AHC/VHC/H/U/V SERIES,
Description: INVERTER, AHC/VHC/H/U/V SERIES,
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| 74LV132PW,118 |
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Виробник: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 3.9V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 3.9V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
на замовлення 12250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.28 грн |
| 26+ | 11.65 грн |
| 30+ | 10.32 грн |
| 100+ | 8.30 грн |
| 250+ | 7.64 грн |
| 500+ | 7.24 грн |
| 1000+ | 6.80 грн |
| 74LV393D |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74LV132D - NAND GAT
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA 74LV132D - NAND GAT
Packaging: Bulk
Part Status: Active
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| BZT52-C33,115 |
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Виробник: Nexperia USA Inc.
Description: ZENER DIODE, 33V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Description: ZENER DIODE, 33V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
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| BUK7M42-60EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 16.76 грн |
| 3000+ | 14.73 грн |
| BUK7M42-60EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4319 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 63.63 грн |
| 10+ | 38.13 грн |
| 100+ | 24.71 грн |
| 500+ | 17.78 грн |
| PBSS306PZ,135 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 100V 4.1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 410mA, 4.1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 4.1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Qualification: AEC-Q100
Description: TRANS PNP 100V 4.1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 410mA, 4.1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 4.1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Qualification: AEC-Q100
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| PBSS306PZ,135 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 100V 4.1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 410mA, 4.1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 4.1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Qualification: AEC-Q100
Description: TRANS PNP 100V 4.1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 410mA, 4.1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 4.1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Qualification: AEC-Q100
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 106.05 грн |
| 10+ | 63.62 грн |
| 100+ | 41.58 грн |
| 500+ | 30.13 грн |
| PBSS306PX,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 100V 3.7A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3.7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q100
Description: TRANS PNP 100V 3.7A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3.7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| PBSS306PX,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 100V 3.7A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3.7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q100
Description: TRANS PNP 100V 3.7A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3.7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q100
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| 74AUP1G386GS,132 |
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Виробник: Nexperia USA Inc.
Description: IC GATE XOR 1CH 3-INP 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC GATE XOR 1CH 3-INP 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1138+ | 18.84 грн |
| PBSS4360PAS115 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PBSS4360PAS SMALL S
Description: NOW NEXPERIA PBSS4360PAS SMALL S
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| PBSS4360PAS115 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PBSS4360PAS SMALL S
Description: NOW NEXPERIA PBSS4360PAS SMALL S
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| CBTD16210DGG/S400, |
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Виробник: Nexperia USA Inc.
Description: IC BUS SWITCH 20BIT 48TSSOP
Description: IC BUS SWITCH 20BIT 48TSSOP
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| 74HC3GU04DP,125 |
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Виробник: Nexperia USA Inc.
Description: IC INVERTER 3CH 3-INP 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 5ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 20 µA
Description: IC INVERTER 3CH 3-INP 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 5ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 20 µA
на замовлення 159 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.70 грн |
| 10+ | 40.40 грн |
| 25+ | 37.70 грн |
| 100+ | 28.30 грн |
| LSF0102GXX |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 8-X2SON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-X2SON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NHDTA114YUF |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 80V SOT323
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
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од. на суму грн.
| 74AUP1Z125GW,125 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 14.94 грн |
| 6000+ | 14.00 грн |
| 9000+ | 13.80 грн |
| 15000+ | 12.75 грн |
| 21000+ | 12.64 грн |
| 30000+ | 12.52 грн |
| 74AUP1Z125GW,125 |
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Виробник: Nexperia USA Inc.
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 44494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.78 грн |
| 14+ | 23.00 грн |
| 25+ | 20.55 грн |
| 100+ | 16.76 грн |
| 250+ | 15.56 грн |
| 500+ | 14.84 грн |
| 1000+ | 14.13 грн |
| PBSS4032SN,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS 2NPN DUAL 30V 5.7A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 5.7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: TRANS 2NPN DUAL 30V 5.7A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 5.7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
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В кошику
од. на суму грн.
| 74AUP1T57GW,125 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC XLTR VL UNIDIR 6-TSSOP
Number of Circuits: 1
Voltage - VCCB: 2.3 V ~ 3.6 V
Voltage - VCCA: 1.8 V ~ 2.7 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 6-TSSOP
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Configurable Gate Logic Functions
Packaging: Tape & Reel (TR)
Description: IC XLTR VL UNIDIR 6-TSSOP
Number of Circuits: 1
Voltage - VCCB: 2.3 V ~ 3.6 V
Voltage - VCCA: 1.8 V ~ 2.7 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 6-TSSOP
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Configurable Gate Logic Functions
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.48 грн |
| 6000+ | 9.79 грн |
| 74AUP1T57GW,125 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC XLTR VL UNIDIR 6-TSSOP
Features: Configurable Gate Logic Functions
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 6-TSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.8 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 1
Description: IC XLTR VL UNIDIR 6-TSSOP
Features: Configurable Gate Logic Functions
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 6-TSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.8 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 1
на замовлення 8964 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 19+ | 16.79 грн |
| 50+ | 13.74 грн |
| 100+ | 12.00 грн |
| 74HCT9046APW118 |
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Виробник: Nexperia USA Inc.
Description: IC PHASE LOCK LOOP 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 19MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 2:2
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC PHASE LOCK LOOP 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 19MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 2:2
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 32160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 234+ | 91.67 грн |
| PMEG3005ELD,315 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 30V 500MA DFN1006D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 30V 500MA DFN1006D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
на замовлення 89043 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.42 грн |
| 25+ | 12.33 грн |
| 100+ | 8.99 грн |
| 500+ | 6.27 грн |
| 1000+ | 5.24 грн |
| 2000+ | 4.86 грн |
| 5000+ | 4.25 грн |
| NHDTC123JUF |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| NHDTC123JUF |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NHDTC123JUX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.21 грн |
| 45+ | 6.81 грн |
| 100+ | 4.55 грн |
| 500+ | 3.25 грн |
| NHDTC123JTR |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.75 грн |
| 6000+ | 2.37 грн |
| 9000+ | 2.22 грн |
| 15000+ | 1.93 грн |
| NHDTC123JTR |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 20840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.35 грн |
| 38+ | 8.09 грн |
| 100+ | 5.02 грн |
| 500+ | 3.43 грн |
| 1000+ | 3.02 грн |
| PMZB350UPE,315 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
на замовлення 20021 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.49 грн |
| 19+ | 16.26 грн |
| 100+ | 7.42 грн |
| 500+ | 6.32 грн |
| 1000+ | 5.33 грн |
| 2000+ | 5.15 грн |
| 5000+ | 4.82 грн |
| BUK9Y6R5-40HX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 70A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 70A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.27 грн |
| 10+ | 42.36 грн |
| 25+ | 38.10 грн |
| 100+ | 31.39 грн |
| 250+ | 29.31 грн |
| 500+ | 28.05 грн |
| BUK6Y24-40PX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 40V 39A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 39A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 20 V
Qualification: AEC-Q101
на замовлення 9012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 100.55 грн |
| 10+ | 61.05 грн |
| 100+ | 40.53 грн |
| 500+ | 29.74 грн |
| BUK6Y61-60PX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| BUK6Y61-60PX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
на замовлення 1125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 76.20 грн |
| 10+ | 49.09 грн |
| 100+ | 37.25 грн |
| 500+ | 29.85 грн |
| BUK6Y19-30PX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 45A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 9063 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.19 грн |
| 10+ | 66.27 грн |
| 100+ | 44.04 грн |
| 500+ | 32.37 грн |
| BUK6Y10-30PX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 80A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 30V 80A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 38.76 грн |
| BUK6Y10-30PX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 80A LFPAK56
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 30V 80A LFPAK56
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2941 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 132.76 грн |
| 10+ | 80.94 грн |
| 100+ | 54.29 грн |
| 500+ | 40.23 грн |
| BUK6Y14-40PX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 35.93 грн |
| BUK6Y14-40PX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 122.55 грн |
| 10+ | 75.19 грн |
| 100+ | 50.40 грн |
| 500+ | 37.31 грн |
| PSMN3R2-40YLDX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 120A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 44.95 грн |
| PSMN3R2-40YLDX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 120A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 102.91 грн |
| 10+ | 80.56 грн |
| 100+ | 62.69 грн |
| 500+ | 49.87 грн |
| PSMN1R9-40YSDX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Description: MOSFET N-CH 40V 200A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| PSMN1R9-40YSDX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 200A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 177.54 грн |
| 10+ | 110.29 грн |
| 100+ | 75.62 грн |
| 500+ | 57.05 грн |
| PSMN1R7-40YLDX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7966 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 40V 200A LFPAK56
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7966 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 8240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 208.96 грн |
| 10+ | 129.66 грн |
| 50+ | 98.93 грн |
| 100+ | 83.54 грн |
| PSMNR70-30YLHX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| PSMNR70-30YLHX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BUK7Y7R0-40HX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 68A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Description: MOSFET N-CH 40V 68A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 38.71 грн |
| 3000+ | 34.42 грн |
| PSMN1R5-40YSDX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 238W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 240A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 238W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 55.14 грн |
| PSMN1R5-40YSDX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 238W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 40V 240A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 238W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
на замовлення 3896 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 177.54 грн |
| 10+ | 109.99 грн |
| 100+ | 75.22 грн |
| 500+ | 56.62 грн |
| BZV85-C75,133 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 75V 1.3W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 225 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 53 V
Description: DIODE ZENER 75V 1.3W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 225 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 53 V
на замовлення 60937 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2844+ | 7.40 грн |
| 74HC4053DB118 |
![]() |
Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74HC4053DB - SINGLE
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA 74HC4053DB - SINGLE
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BZX79-C7V5,143 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 400MW ALF2
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Description: DIODE ZENER 7.5V 400MW ALF2
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BZX79-C7V5,133 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 400MW ALF2
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 7.5V 400MW ALF2
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 9800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 37+ | 8.64 грн |
| 57+ | 5.37 грн |
| 100+ | 3.29 грн |
| 500+ | 2.24 грн |
| 1000+ | 1.96 грн |
| 2000+ | 1.72 грн |
| 5000+ | 1.44 грн |
























