Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (32064) > Сторінка 190 з 535
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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PMZ350UPEYL | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1A DFN1006-3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V |
на замовлення 580 шт: термін постачання 21-31 дні (днів) |
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| PMEG150G20ELRX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 2A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NXS0108BQX | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 20-DHVQFNPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 110Mbps Supplier Device Package: 20-DHVQFN (4.5x2.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XS3A1T5157GSH | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 1 900MOHM 6XSONPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 900mOhm -3db Bandwidth: 40MHz Supplier Device Package: 6-XSON, SOT1202 (1x1) Voltage - Supply, Single (V+): 1.4V ~ 4.3V Charge Injection: 15pC Crosstalk: -90dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 40ns, 20ns Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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XS3A1T5157GSH | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 1 900MOHM 6XSONPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 900mOhm -3db Bandwidth: 40MHz Supplier Device Package: 6-XSON, SOT1202 (1x1) Voltage - Supply, Single (V+): 1.4V ~ 4.3V Charge Injection: 15pC Crosstalk: -90dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 40ns, 20ns Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVC1G3157GW-Q100,125 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74LVC1G3157GW - SINPart Status: Active Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 74LVC1G3157GW-Q100125 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74LVC1G3157GW - SINPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PMEG150G10ELRX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 1A SOD123W Current - Reverse Leakage @ Vr: 30 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 34pF @ 1V, 1MHz Technology: SiGe (Silicon Germanium) Reverse Recovery Time (trr): 15 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC857CW/DG/B4F | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A SC-70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG060V030EPDZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 3A CFP15Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 350pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG060V030EPDZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 3A CFP15Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 350pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1295 шт: термін постачання 21-31 дні (днів) |
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BUK7909-75ATE127 | Nexperia USA Inc. |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK7909-75ATE,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A TO220-5Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-220-5 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 272W (Tc) FET Feature: Temperature Sensing Diode Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK7909-75AIE,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A TO220-5Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PDZ20B,115 | Nexperia USA Inc. |
Description: DIODE ZENER 20V 400MW SOD323Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 15 V |
на замовлення 2902 шт: термін постачання 21-31 дні (днів) |
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PTVS12VS1UR/8X | Nexperia USA Inc. |
Description: TVS DIODE 12VWM 19.9VC SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 20.1A Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMV52ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.2A TO236ABVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 630mW (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMV52ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.2A TO236ABQualification: AEC-Q101 Grade: Automotive Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Power Dissipation (Max): 630mW (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 4303 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 31533 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 30445 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 10673 шт: термін постачання 21-31 дні (днів) |
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PBSS3540E,115 | Nexperia USA Inc. |
Description: TRANS PNP 40V 0.5A SC-75Packaging: Bulk Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 300MHz Supplier Device Package: SC-75 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 95574 шт: термін постачання 21-31 дні (днів) |
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BUK7S1R5-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 260A LFPAK88Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -10V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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BUK7S1R5-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 260A LFPAK88Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -10V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1846 шт: термін постачання 21-31 дні (днів) |
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BUK7S0R9-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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PSMNR90-40SSHJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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PSMNR90-40SSHJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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PSMNR70-40SSHJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 425A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 425A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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PTVS7V0S1UR,115 | Nexperia USA Inc. |
Description: TVS DIODE 7VWM 12VC SOD123WQualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 12V Voltage - Breakdown (Min): 7.78V Unidirectional Channels: 1 Supplier Device Package: SOD-123W Voltage - Reverse Standoff (Typ): 7V Current - Peak Pulse (10/1000µs): 33.3A Operating Temperature: -55°C ~ 150°C (TA) Type: Zener |
на замовлення 8840 шт: термін постачання 21-31 дні (днів) |
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74LVT16374ADGG,118 | Nexperia USA Inc. |
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOPNumber of Bits per Element: 8 Part Status: Active Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF Supplier Device Package: 48-TSSOP Input Capacitance: 3 pF Clock Frequency: 150 MHz Trigger Type: Positive Edge Current - Output High, Low: 32mA, 64mA Current - Quiescent (Iq): 120 µA Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: D-Type Function: Standard Number of Elements: 2 Mounting Type: Surface Mount Output Type: Tri-State, Non-Inverted Package / Case: 48-TFSOP (0.240", 6.10mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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74LVT16374ADGG,118 | Nexperia USA Inc. |
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOPNumber of Bits per Element: 8 Part Status: Active Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF Supplier Device Package: 48-TSSOP Input Capacitance: 3 pF Clock Frequency: 150 MHz Trigger Type: Positive Edge Current - Output High, Low: 32mA, 64mA Current - Quiescent (Iq): 120 µA Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: D-Type Function: Standard Number of Elements: 2 Mounting Type: Surface Mount Output Type: Tri-State, Non-Inverted Package / Case: 48-TFSOP (0.240", 6.10mm Width) Packaging: Cut Tape (CT) |
на замовлення 572 шт: термін постачання 21-31 дні (днів) |
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BZX84-A75215 | Nexperia USA Inc. |
Description: NOW NEXPERIA ZENER DIODE, 75V, 1 |
товару немає в наявності |
Мінімальне замовлення: 3076 шт В кошику од. на суму грн. | ||||||||||||||
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BCP56T,115 | Nexperia USA Inc. |
Description: 1A, 80V, NPN, SILICONPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT46GW,118 | Nexperia USA Inc. |
Description: RECTIFIER DIODE, SCHOTTKY, 0.25APackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVC273BQ,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SGL 8-BIT 20-DHVQFNNumber of Bits per Element: 8 Part Status: Active Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF Supplier Device Package: 20-DHVQFN (4.5x2.5) Input Capacitance: 5 pF Clock Frequency: 230 MHz Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Current - Quiescent (Iq): 10 µA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Type: D-Type Function: Master Reset Number of Elements: 1 Mounting Type: Surface Mount Output Type: Non-Inverted Package / Case: 20-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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74LVC273BQ,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SGL 8-BIT 20-DHVQFNCurrent - Quiescent (Iq): 10 µA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Type: D-Type Function: Master Reset Number of Elements: 1 Mounting Type: Surface Mount Output Type: Non-Inverted Package / Case: 20-VFQFN Exposed Pad Packaging: Cut Tape (CT) Number of Bits per Element: 8 Part Status: Active Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF Supplier Device Package: 20-DHVQFN (4.5x2.5) Input Capacitance: 5 pF Clock Frequency: 230 MHz Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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| PMEG060V050EPD,139 | Nexperia USA Inc. |
Description: NOW NEXPERIA PMEG060V050EPD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PMEG045V150EPD,139 | Nexperia USA Inc. |
Description: NOW NEXPERIA PMEG045V150EPDPackaging: Bulk Part Status: Active |
на замовлення 2810 шт: термін постачання 21-31 дні (днів) |
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LD6816CX4/C13P,315 | Nexperia USA Inc. |
Description: IC REG LINEAR 1.3V 150MA 4-WLCSPPackaging: Bulk Part Status: Active Package / Case: 4-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WLCSP (0.76x0.76) Voltage - Output (Min/Fixed): 1.3V Control Features: Enable PSRR: 55dB (1kHz) Voltage Dropout (Max): 0.075V @ 150mA Protection Features: Over Current, Over Temperature, Transient Voltage Current - Supply (Max): 250 µA |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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74LVCH8T245BQ118 | Nexperia USA Inc. |
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK661R9-40C,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. | ||||||||||||||
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BUK661R9-40C,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAKCurrent - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V |
на замовлення 1310 шт: термін постачання 21-31 дні (днів) |
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BUK9Y1R9-40H,115 | Nexperia USA Inc. |
Description: POWER FIELD-EFFECT TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NHDTA114YTR | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 80V TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NHDTA114YUX | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 33909 шт: термін постачання 21-31 дні (днів) |
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BCP56H,115 | Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 155MHz Supplier Device Package: SOT-223 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2.2 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC857BQBZ | Nexperia USA Inc. |
Description: TRANS 45V 0.1A DFN1110D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: DFN1110D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC857BQBZ | Nexperia USA Inc. |
Description: TRANS 45V 0.1A DFN1110D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: DFN1110D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52-C5V1,115 | Nexperia USA Inc. |
Description: ZENER DIODE, 5.1V, 4.99%, 0.41W,Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCP56-10T,115 | Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,Part Status: Active Packaging: Bulk Current - Collector (Ic) (Max): 1 A Supplier Device Package: SOT-223 Frequency - Transition: 155MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LSF0102GXX | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 8-X2SONNumber of Circuits: 1 Part Status: Active Voltage - VCCB: 0 V ~ 5 V Voltage - VCCA: 0 V ~ 5 V Channels per Circuit: 2 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 8-X2SON (1.35x0.8) Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Open Drain, Push-Pull Package / Case: 8-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 8510 шт: термін постачання 21-31 дні (днів) |
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LSF0102DCH | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 8-VSSOPNumber of Circuits: 1 Part Status: Active Voltage - VCCB: 0 V ~ 5 V Voltage - VCCA: 0 V ~ 5 V Channels per Circuit: 2 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 8-VSSOP Data Rate: 100MHz Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Open Drain, Push-Pull Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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LSF0102DCH | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 8-VSSOPData Rate: 100MHz Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Open Drain, Push-Pull Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) Number of Circuits: 1 Part Status: Active Voltage - VCCB: 0 V ~ 5 V Voltage - VCCA: 0 V ~ 5 V Channels per Circuit: 2 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 8-VSSOP |
на замовлення 495 шт: термін постачання 21-31 дні (днів) |
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LSF0101GMX | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 6-XSON/SOT886Number of Circuits: 1 Part Status: Active Voltage - VCCB: 0.95 V ~ 5 V Voltage - VCCA: 0.95 V ~ 5 V Channels per Circuit: 1 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 6-XSON, SOT886 (1.45x1) Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Open Drain, Push-Pull Package / Case: 6-XFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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LSF0101GWH | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 6-TSSOPOutput Type: Open Drain, Push-Pull Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Number of Circuits: 1 Part Status: Active Voltage - VCCB: 1.8 V ~ 5.5 V Voltage - VCCA: 0.95 V ~ 4.5 V Channels per Circuit: 1 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 6-TSSOP Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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74HC2G17GW-Q100H | Nexperia USA Inc. |
Description: IC BUFF 2V/6V 6-TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 5.2mA, 5.2mA Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4327 шт: термін постачання 21-31 дні (днів) |
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PMEG120G30ELPX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 3A SOD128/CFP5 Current - Reverse Leakage @ Vr: 30 nA @ 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-128/CFP5 Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 103pF @ 1V, 1MHz Technology: SiGe (Silicon Germanium) Reverse Recovery Time (trr): 11 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| PMZ350UPEYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.18 грн |
| 19+ | 16.23 грн |
| 50+ | 11.65 грн |
| 100+ | 9.54 грн |
| PMEG150G20ELRX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| NXS0108BQX |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.01 грн |
| 10+ | 45.40 грн |
| 25+ | 40.92 грн |
| 100+ | 33.76 грн |
| 250+ | 31.56 грн |
| 500+ | 30.22 грн |
| 1000+ | 29.65 грн |
| XS3A1T5157GSH |
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Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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| XS3A1T5157GSH |
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Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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| 74LVC1G3157GW-Q100,125 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
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| 74LVC1G3157GW-Q100125 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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| PMEG150G10ELRX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Description: DIODE SIGE 150V 1A SOD123W
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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| BC857CW/DG/B4F |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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| PMEG060V030EPDZ |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 1500 шт
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| PMEG060V030EPDZ |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.58 грн |
| 10+ | 36.35 грн |
| 100+ | 23.51 грн |
| 500+ | 16.87 грн |
| BUK7909-75ATE127 |
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Виробник: Nexperia USA Inc.
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| BUK7909-75ATE,127 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
Description: MOSFET N-CH 75V 75A TO220-5
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
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| BUK7909-75AIE,127 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| PDZ20B,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 20V 400MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
Description: DIODE ZENER 20V 400MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
на замовлення 2902 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.76 грн |
| 35+ | 8.68 грн |
| 50+ | 6.15 грн |
| 100+ | 5.00 грн |
| PTVS12VS1UR/8X |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| PMV52ENEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 3.2A TO236AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.27 грн |
| PMV52ENEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 3.2A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 4303 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 15+ | 20.19 грн |
| 100+ | 10.60 грн |
| 500+ | 9.04 грн |
| 1000+ | 7.78 грн |
| NHDTC143ZUF |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.68 грн |
| 20000+ | 2.33 грн |
| 30000+ | 2.21 грн |
| NHDTC143ZUF |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 31533 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.31 грн |
| 32+ | 9.50 грн |
| 100+ | 5.87 грн |
| 500+ | 4.02 грн |
| 1000+ | 3.54 грн |
| 2000+ | 3.14 грн |
| 5000+ | 2.65 грн |
| NHDTC143ZTR |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.78 грн |
| 6000+ | 2.39 грн |
| 9000+ | 2.24 грн |
| 15000+ | 1.95 грн |
| 21000+ | 1.86 грн |
| 30000+ | 1.77 грн |
| NHDTC143ZTR |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 30445 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.98 грн |
| 37+ | 8.15 грн |
| 100+ | 5.07 грн |
| 500+ | 3.47 грн |
| 1000+ | 3.05 грн |
| NHDTC143ZUX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.04 грн |
| 6000+ | 2.62 грн |
| NHDTC143ZUX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 10673 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.76 грн |
| 34+ | 8.90 грн |
| 100+ | 5.51 грн |
| 500+ | 3.78 грн |
| 1000+ | 3.33 грн |
| PBSS3540E,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 40V 0.5A SC-75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS PNP 40V 0.5A SC-75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 95574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1979+ | 10.21 грн |
| BUK7S1R5-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 260A LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 260A LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BUK7S1R5-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 260A LFPAK88
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 260A LFPAK88
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1846 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.22 грн |
| 10+ | 193.25 грн |
| 50+ | 149.75 грн |
| 100+ | 127.41 грн |
| 500+ | 100.65 грн |
| BUK7S0R9-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PSMNR90-40SSHJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PSMNR90-40SSHJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 385.99 грн |
| PSMNR70-40SSHJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 462.10 грн |
| 10+ | 298.10 грн |
| 50+ | 235.06 грн |
| 100+ | 201.56 грн |
| 500+ | 175.59 грн |
| PTVS7V0S1UR,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 7VWM 12VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Description: TVS DIODE 7VWM 12VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
на замовлення 8840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.61 грн |
| 13+ | 23.33 грн |
| 100+ | 14.84 грн |
| 500+ | 10.47 грн |
| 1000+ | 9.36 грн |
| 74LVT16374ADGG,118 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Supplier Device Package: 48-TSSOP
Input Capacitance: 3 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 120 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Supplier Device Package: 48-TSSOP
Input Capacitance: 3 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 120 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 74LVT16374ADGG,118 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Supplier Device Package: 48-TSSOP
Input Capacitance: 3 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 120 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Supplier Device Package: 48-TSSOP
Input Capacitance: 3 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 120 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.77 грн |
| 10+ | 55.79 грн |
| 50+ | 47.03 грн |
| 100+ | 41.58 грн |
| BZX84-A75215 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA ZENER DIODE, 75V, 1
Description: NOW NEXPERIA ZENER DIODE, 75V, 1
товару немає в наявності
Мінімальне замовлення: 3076 шт
В кошику
од. на суму грн.
| BAT46GW,118 |
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Виробник: Nexperia USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, 0.25A
Packaging: Bulk
Part Status: Active
Description: RECTIFIER DIODE, SCHOTTKY, 0.25A
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC273BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SGL 8-BIT 20-DHVQFN
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Input Capacitance: 5 pF
Clock Frequency: 230 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC FF D-TYPE SGL 8-BIT 20-DHVQFN
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Input Capacitance: 5 pF
Clock Frequency: 230 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74LVC273BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SGL 8-BIT 20-DHVQFN
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Input Capacitance: 5 pF
Clock Frequency: 230 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Description: IC FF D-TYPE SGL 8-BIT 20-DHVQFN
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Input Capacitance: 5 pF
Clock Frequency: 230 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.17 грн |
| 13+ | 23.03 грн |
| 25+ | 20.55 грн |
| PMEG060V050EPD,139 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PMEG060V050EPD
Description: NOW NEXPERIA PMEG060V050EPD
товару немає в наявності
В кошику
од. на суму грн.
| PMEG045V150EPD,139 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PMEG045V150EPD
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA PMEG045V150EPD
Packaging: Bulk
Part Status: Active
на замовлення 2810 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 838+ | 27.96 грн |
| LD6816CX4/C13P,315 |
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Виробник: Nexperia USA Inc.
Description: IC REG LINEAR 1.3V 150MA 4-WLCSP
Packaging: Bulk
Part Status: Active
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
Description: IC REG LINEAR 1.3V 150MA 4-WLCSP
Packaging: Bulk
Part Status: Active
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1165+ | 17.38 грн |
| 74LVCH8T245BQ118 |
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Виробник: Nexperia USA Inc.
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN
товару немає в наявності
В кошику
од. на суму грн.
| BUK661R9-40C,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 120A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику
од. на суму грн.
| BUK661R9-40C,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Description: MOSFET N-CH 40V 120A D2PAK
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
на замовлення 1310 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.50 грн |
| 10+ | 174.78 грн |
| 100+ | 128.16 грн |
| BUK9Y1R9-40H,115 |
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Виробник: Nexperia USA Inc.
Description: POWER FIELD-EFFECT TRANSISTOR
Description: POWER FIELD-EFFECT TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| NHDTA114YTR |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.58 грн |
| 6000+ | 2.22 грн |
| 9000+ | 2.08 грн |
| NHDTA114YUX |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 33909 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.76 грн |
| 34+ | 8.97 грн |
| 100+ | 5.55 грн |
| 500+ | 3.80 грн |
| 1000+ | 3.35 грн |
| BCP56H,115 |
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Виробник: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.2 W
Qualification: AEC-Q101
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.2 W
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BC857BQBZ |
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Виробник: Nexperia USA Inc.
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
товару немає в наявності
В кошику
од. на суму грн.
| BC857BQBZ |
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Виробник: Nexperia USA Inc.
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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| BZT52-C5V1,115 |
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Виробник: Nexperia USA Inc.
Description: ZENER DIODE, 5.1V, 4.99%, 0.41W,
Packaging: Bulk
Part Status: Active
Description: ZENER DIODE, 5.1V, 4.99%, 0.41W,
Packaging: Bulk
Part Status: Active
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| BCP56-10T,115 |
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Виробник: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Part Status: Active
Packaging: Bulk
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-223
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Part Status: Active
Packaging: Bulk
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-223
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
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| LSF0102GXX |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 8-X2SON
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0 V ~ 5 V
Voltage - VCCA: 0 V ~ 5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-X2SON (1.35x0.8)
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 8-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC XLTR VL BIDIR 8-X2SON
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0 V ~ 5 V
Voltage - VCCA: 0 V ~ 5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-X2SON (1.35x0.8)
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 8-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 8510 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.40 грн |
| 14+ | 22.59 грн |
| 25+ | 20.13 грн |
| 100+ | 16.42 грн |
| 250+ | 15.24 грн |
| 500+ | 14.52 грн |
| 1000+ | 13.82 грн |
| LSF0102DCH |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 8-VSSOP
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0 V ~ 5 V
Voltage - VCCA: 0 V ~ 5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-VSSOP
Data Rate: 100MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC XLTR VL BIDIR 8-VSSOP
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0 V ~ 5 V
Voltage - VCCA: 0 V ~ 5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-VSSOP
Data Rate: 100MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| LSF0102DCH |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 8-VSSOP
Data Rate: 100MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0 V ~ 5 V
Voltage - VCCA: 0 V ~ 5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-VSSOP
Description: IC XLTR VL BIDIR 8-VSSOP
Data Rate: 100MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0 V ~ 5 V
Voltage - VCCA: 0 V ~ 5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-VSSOP
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.85 грн |
| 19+ | 16.30 грн |
| 25+ | 14.54 грн |
| 100+ | 11.75 грн |
| 250+ | 10.86 грн |
| LSF0101GMX |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 6-XSON/SOT886
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.95 V ~ 5 V
Voltage - VCCA: 0.95 V ~ 5 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Description: IC XLTR VL BIDIR 6-XSON/SOT886
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.95 V ~ 5 V
Voltage - VCCA: 0.95 V ~ 5 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| LSF0101GWH |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 6-TSSOP
Output Type: Open Drain, Push-Pull
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.8 V ~ 5.5 V
Voltage - VCCA: 0.95 V ~ 4.5 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-TSSOP
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Description: IC XLTR VL BIDIR 6-TSSOP
Output Type: Open Drain, Push-Pull
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.8 V ~ 5.5 V
Voltage - VCCA: 0.95 V ~ 4.5 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-TSSOP
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.60 грн |
| 6000+ | 8.98 грн |
| 74HC2G17GW-Q100H |
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Виробник: Nexperia USA Inc.
Description: IC BUFF 2V/6V 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF 2V/6V 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4327 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.42 грн |
| 24+ | 12.79 грн |
| 27+ | 11.34 грн |
| 100+ | 9.14 грн |
| 250+ | 8.42 грн |
| 500+ | 7.99 грн |
| 1000+ | 7.51 грн |
| PMEG120G30ELPX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 3A SOD128/CFP5
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE SIGE 120V 3A SOD128/CFP5
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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