Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (32401) > Сторінка 229 з 541
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMEG4005EGW,115 | Nexperia USA Inc. |
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,Part Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
PMEG4005EH/6X | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 500MA SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 43pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
PSMN1R5-50YLHX | Nexperia USA Inc. |
Description: PSMN1R5-50YLH/SOT1023/4 LEADSPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
PSMN1R5-50YLHX | Nexperia USA Inc. |
Description: PSMN1R5-50YLH/SOT1023/4 LEADSPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V |
на замовлення 2595 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PSMN1R2-55SLHAX | Nexperia USA Inc. |
Description: PSMN1R2-55SLH/SOT1235/LFPAK88Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 375W (Tc) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
PSMN1R2-55SLHAX | Nexperia USA Inc. |
Description: PSMN1R2-55SLH/SOT1235/LFPAK88Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 375W (Tc) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PSMN1R2-55SLH | Nexperia USA Inc. |
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 AInput Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 375W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
PSMN1R2-55SLH | Nexperia USA Inc. |
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 AInput Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 375W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Cut Tape (CT) |
на замовлення 1975 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PSMN1R2-25YLD,115 | Nexperia USA Inc. | Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PSMN1R7-25YLD115 | Nexperia USA Inc. |
Description: NOW NEXPERIA PSMN1R7-25YLD - POWPackaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PSMN1R1-30EL,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A I2PAKInput Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 338W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Bulk |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
74HCT10DB,112 | Nexperia USA Inc. |
Description: IC GATE NANDPackaging: Bulk Part Status: Active |
на замовлення 3868 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
74HCT10DB,112 | Nexperia USA Inc. |
Description: IC GATE NANDPackaging: Bulk Part Status: Active |
на замовлення 4056 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
PXP6R1-30QLJ | Nexperia USA Inc. |
Description: PXP6R1-30QL/SOT8002/MLPAK33Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
PXP6R1-30QLJ | Nexperia USA Inc. |
Description: PXP6R1-30QL/SOT8002/MLPAK33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
74AHCT1G125GF,132 | Nexperia USA Inc. |
Description: IC BUFF 4.5V/5.5V 6-XSON, SOT891Output Type: 3-State Package / Case: 6-XFDFN Number of Elements: 1 Mounting Type: Surface Mount Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Packaging: Bulk Part Status: Obsolete Supplier Device Package: 6-XSON, SOT891 (1x1) Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Voltage - Supply: 4.5V ~ 5.5V |
на замовлення 125643 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
74HC20PW118 | Nexperia USA Inc. | Description: IC GATE NAND 2CH 4-INP 14TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PUMT1 | Nexperia USA Inc. |
Description: PUMT1 - PNP GENERAL PURPOSE DOUB |
товару немає в наявності |
Мінімальне замовлення: 11901 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
PXN5R4-30QLJ | Nexperia USA Inc. |
Description: PXN5R4-30QL/SOT8002/MLPAK33Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
PXN5R4-30QLJ | Nexperia USA Inc. |
Description: PXN5R4-30QL/SOT8002/MLPAK33Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 16790 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BZX58550-C62-QX | Nexperia USA Inc. |
Description: BZX58550-C62-Q/SOD523/SC-79 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BZX58550-C62-QX | Nexperia USA Inc. |
Description: BZX58550-C62-Q/SOD523/SC-79 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
74LVC1G08GF/S500,1 | Nexperia USA Inc. |
Description: IC AND SNGL 2-INPPackaging: Bulk Part Status: Active |
на замовлення 245000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
74LVC1G08GM,115 | Nexperia USA Inc. |
Description: IC AND 1-CIR 2-IN 6-XSONPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-XSON, SOT886 (1.45x1) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 4 µA |
на замовлення 35343 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
LD6805K/12H,115 | Nexperia USA Inc. |
Description: IC REG LIN 1.2V 150MA DFN1010C-4Current - Supply (Max): 150 µA Protection Features: Over Current, Transient Voltage Voltage Dropout (Max): 0.25V @ 150mA PSRR: 75dB (1kHz) Part Status: Obsolete Control Features: Enable Voltage - Output (Min/Fixed): 1.2V Supplier Device Package: DFN1010C-4 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 35 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UDFN Exposed Pad Packaging: Bulk |
на замовлення 39750 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PESD3USB30Z | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 15WLCSP |
на замовлення 17350 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| PESD3USB3S/CZ | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 15WLCSPSupplier Device Package: 15-WLCSP (2.37x1.17) Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 8A (8/20µs) Capacitance @ Frequency: 0.45pF @ 1MHz Applications: HDMI, USB Operating Temperature: -40°C ~ 125°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 15-UFBGA, WLCSP Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V Unidirectional Channels: 3 |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | |||||||||||||||||
|
PESD2USB3S/CZ | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 10WLCSPCapacitance @ Frequency: 0.45pF @ 1MHz Applications: HDMI, USB Operating Temperature: -40°C ~ 125°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 10-UFBGA, WLCSP Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: 10-WLCSP (1.57x1.17) Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 8A (8/20µs) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PESD1USB3S/CZ | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 5WLCSPPart Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: 5-WLCSP (0.77x1.17) Mounting Type: Surface Mount Package / Case: 5-UFBGA, WLCSP Packaging: Tape & Reel (TR) Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 8A (8/20µs) Capacitance @ Frequency: 0.45pF @ 1MHz Applications: HDMI, USB Operating Temperature: -40°C ~ 125°C (TA) Type: Zener |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BZB84-B47,215 | Nexperia USA Inc. |
Description: DIODE ZENER ARRAY 47V SOT-23Tolerance: ±2% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: SOT-23 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V |
на замовлення 9273 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BZB84-C4V3,215 | Nexperia USA Inc. |
Description: DIODE ZENER ARRAY 4.3V SOT-23Packaging: Bulk Current - Reverse Leakage @ Vr: 3 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOT-23 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 4.3 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% |
на замовлення 168000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BZB84-B30,215 | Nexperia USA Inc. |
Description: DIODE ZENER ARRAY 30V TO-236ABCurrent - Reverse Leakage @ Vr: 50 nA @ 21 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 30 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2% Packaging: Bulk |
на замовлення 58251 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143ZQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143XQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143XQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143EQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PDTA143EQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143ZQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143ZQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143EQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PDTA143EQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143XQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143XQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143ZQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143ZQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143XQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143XQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143EQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143EQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143EQAZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 125000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143ZMB,315 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1006B-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
на замовлення 79888 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143XQAZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 130000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTA143ZQAZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 125000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTC143ZQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTC143ZQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
PDTC143ZQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTC143EQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTC143XQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. | ||||||||||||||||
|
PDTC143XQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PDTC143XQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
| PMEG4005EGW,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Part Status: Active
Packaging: Bulk
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Part Status: Active
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| PMEG4005EH/6X |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| PSMN1R5-50YLHX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| PSMN1R5-50YLHX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
на замовлення 2595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 318.76 грн |
| 10+ | 202.50 грн |
| 50+ | 157.49 грн |
| 100+ | 134.19 грн |
| 500+ | 114.63 грн |
| PSMN1R2-55SLHAX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PSMN1R2-55SLHAX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PSMN1R2-55SLH |
![]() |
Виробник: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PSMN1R2-55SLH |
![]() |
Виробник: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 289.42 грн |
| 10+ | 250.45 грн |
| 100+ | 205.18 грн |
| 500+ | 163.91 грн |
| 1000+ | 138.24 грн |
| PSMN1R2-25YLD,115 |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
товару немає в наявності
В кошику
од. на суму грн.
| PSMN1R1-30EL,127 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
Description: MOSFET N-CH 30V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 118+ | 176.80 грн |
| 74HCT10DB,112 |
![]() |
на замовлення 3868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 384+ | 54.08 грн |
| 74HCT10DB,112 |
![]() |
на замовлення 4056 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 384+ | 54.08 грн |
| PXP6R1-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PXP6R1-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| 74AHCT1G125GF,132 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC BUFF 4.5V/5.5V 6-XSON, SOT891
Output Type: 3-State
Package / Case: 6-XFDFN
Number of Elements: 1
Mounting Type: Surface Mount
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
Description: IC BUFF 4.5V/5.5V 6-XSON, SOT891
Output Type: 3-State
Package / Case: 6-XFDFN
Number of Elements: 1
Mounting Type: Surface Mount
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
на замовлення 125643 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 558+ | 37.44 грн |
| 74HC20PW118 |
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14TSSOP
Description: IC GATE NAND 2CH 4-INP 14TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| PUMT1 |
![]() |
Виробник: Nexperia USA Inc.
Description: PUMT1 - PNP GENERAL PURPOSE DOUB
Description: PUMT1 - PNP GENERAL PURPOSE DOUB
товару немає в наявності
Мінімальне замовлення: 11901 шт
В кошику
од. на суму грн.
| PXN5R4-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: PXN5R4-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.46 грн |
| 9000+ | 16.41 грн |
| PXN5R4-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: PXN5R4-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 16790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.46 грн |
| 10+ | 49.71 грн |
| 50+ | 36.73 грн |
| 100+ | 30.53 грн |
| 500+ | 23.57 грн |
| BZX58550-C62-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Description: BZX58550-C62-Q/SOD523/SC-79
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX58550-C62-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Description: BZX58550-C62-Q/SOD523/SC-79
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC1G08GF/S500,1 |
![]() |
на замовлення 245000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 720+ | 30.36 грн |
| 74LVC1G08GM,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC AND 1-CIR 2-IN 6-XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Description: IC AND 1-CIR 2-IN 6-XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
на замовлення 35343 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.89 грн |
| 40+ | 7.71 грн |
| 45+ | 6.81 грн |
| 100+ | 5.44 грн |
| 250+ | 4.98 грн |
| 500+ | 4.70 грн |
| 1000+ | 4.40 грн |
| 2500+ | 4.21 грн |
| LD6805K/12H,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC REG LIN 1.2V 150MA DFN1010C-4
Current - Supply (Max): 150 µA
Protection Features: Over Current, Transient Voltage
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: DFN1010C-4
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 35 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Bulk
Description: IC REG LIN 1.2V 150MA DFN1010C-4
Current - Supply (Max): 150 µA
Protection Features: Over Current, Transient Voltage
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: DFN1010C-4
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 35 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Bulk
на замовлення 39750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1068+ | 19.41 грн |
| PESD3USB30Z |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 15WLCSP
Description: TVS DIODE 5.5VWM 15WLCSP
на замовлення 17350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1159+ | 19.60 грн |
| PESD3USB3S/CZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 15WLCSP
Supplier Device Package: 15-WLCSP (2.37x1.17)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 15-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 3
Description: TVS DIODE 5VWM 15WLCSP
Supplier Device Package: 15-WLCSP (2.37x1.17)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 15-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 3
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику
од. на суму грн.
| PESD2USB3S/CZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 10WLCSP
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: 10-WLCSP (1.57x1.17)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Description: TVS DIODE 5VWM 10WLCSP
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: 10-WLCSP (1.57x1.17)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
товару немає в наявності
В кошику
од. на суму грн.
| PESD1USB3S/CZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: 5-WLCSP (0.77x1.17)
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Description: TVS DIODE 5VWM 5WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: 5-WLCSP (0.77x1.17)
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 0.45pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| BZB84-B47,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 47V SOT-23
Tolerance: ±2%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
Description: DIODE ZENER ARRAY 47V SOT-23
Tolerance: ±2%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
на замовлення 9273 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9273+ | 2.19 грн |
| BZB84-C4V3,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 4.3V SOT-23
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Description: DIODE ZENER ARRAY 4.3V SOT-23
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
на замовлення 168000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10764+ | 2.19 грн |
| BZB84-B30,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 30V TO-236AB
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Bulk
Description: DIODE ZENER ARRAY 30V TO-236AB
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Bulk
на замовлення 58251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9616+ | 2.19 грн |
| PDTA143ZQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.84 грн |
| PDTA143XQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.84 грн |
| PDTA143XQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 33+ | 9.32 грн |
| 100+ | 5.76 грн |
| 500+ | 3.96 грн |
| 1000+ | 3.49 грн |
| 2000+ | 3.10 грн |
| PDTA143EQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
| PDTA143EQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 32+ | 9.70 грн |
| 100+ | 6.02 грн |
| 500+ | 4.14 грн |
| 1000+ | 3.65 грн |
| 2000+ | 3.24 грн |
| PDTA143ZQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.84 грн |
| PDTA143ZQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 33+ | 9.32 грн |
| 100+ | 5.76 грн |
| 500+ | 3.96 грн |
| 1000+ | 3.49 грн |
| 2000+ | 3.10 грн |
| PDTA143EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
| PDTA143EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 33+ | 9.32 грн |
| 100+ | 5.76 грн |
| 500+ | 3.96 грн |
| 1000+ | 3.49 грн |
| 2000+ | 3.10 грн |
| PDTA143XQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.84 грн |
| PDTA143XQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 15.07 грн |
| 35+ | 8.93 грн |
| 100+ | 5.56 грн |
| 500+ | 3.82 грн |
| 1000+ | 3.36 грн |
| 2000+ | 2.98 грн |
| PDTA143ZQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.97 грн |
| PDTA143ZQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 33+ | 9.32 грн |
| 100+ | 5.80 грн |
| 500+ | 3.99 грн |
| 1000+ | 3.52 грн |
| 2000+ | 3.12 грн |
| PDTA143XQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.97 грн |
| PDTA143XQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 33+ | 9.32 грн |
| 100+ | 5.80 грн |
| 500+ | 3.99 грн |
| 1000+ | 3.52 грн |
| 2000+ | 3.12 грн |
| PDTA143EQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.73 грн |
| PDTA143EQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 15.07 грн |
| 35+ | 8.93 грн |
| 100+ | 5.56 грн |
| 500+ | 3.82 грн |
| 1000+ | 3.36 грн |
| 2000+ | 2.98 грн |
| PDTA143EQAZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 125000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3647+ | 5.35 грн |
| PDTA143ZMB,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
на замовлення 79888 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3519+ | 6.02 грн |
| PDTA143XQAZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3647+ | 5.35 грн |
| PDTA143ZQAZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 125000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3647+ | 5.55 грн |
| PDTC143ZQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 3.05 грн |
| PDTC143ZQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PDTC143ZQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 31+ | 10.08 грн |
| 100+ | 6.24 грн |
| 500+ | 4.29 грн |
| 1000+ | 3.78 грн |
| 2000+ | 3.35 грн |
| PDTC143EQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 3.05 грн |
| PDTC143XQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 25000 шт
В кошику
од. на суму грн.
| PDTC143XQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 31+ | 10.00 грн |
| 100+ | 6.19 грн |
| 500+ | 4.26 грн |
| 1000+ | 3.75 грн |
| 2000+ | 3.33 грн |
| PDTC143XQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 3.05 грн |

























