Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (32401) > Сторінка 237 з 541
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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CBT3257ADS,112 | Nexperia USA Inc. |
Description: IC MUX/DEMUX 4 X 2:1 16-SSOPPackaging: Bulk Package / Case: 16-SSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-SSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CBT3257ABQ115 | Nexperia USA Inc. |
Description: NOW NEXPERIA CBT3257ABQ - MULTIP |
товару немає в наявності |
Мінімальне замовлення: 2581 шт В кошику од. на суму грн. | ||||||||||||||
| CBT3257AD | Nexperia USA Inc. | Description: NOW NEXPERIA CBT3257AD - MULTIPL |
товару немає в наявності |
Мінімальне замовлення: 1548 шт В кошику од. на суму грн. | |||||||||||||||
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74AHCT377PW,118 | Nexperia USA Inc. |
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 3 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 8 |
на замовлення 17045 шт: термін постачання 21-31 дні (днів) |
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74CBTLVD3245PW,118 | Nexperia USA Inc. |
Description: IC BUS SWITCH 8 X 1:1 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 8 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 2472 шт: термін постачання 21-31 дні (днів) |
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PMEG6010ER/S501X | Nexperia USA Inc. |
Description: PMEG6010ER - 1 A LOW VF MEGA SCH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG6010EP/6X | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 1A SOD128/CFP5Current - Reverse Leakage @ Vr: 60 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-128/CFP5 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 120pF @ 1V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NXV100XPR | Nexperia USA Inc. |
Description: NXV100XP/SOT23/TO-236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Power Dissipation (Max): 340mW (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NXV100XPR | Nexperia USA Inc. |
Description: NXV100XP/SOT23/TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Power Dissipation (Max): 340mW (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PDTA114YQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNQualification: AEC-Q101 Grade: Automotive Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 180 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. | ||||||||||||||
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PDTA114YQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNQualification: AEC-Q101 Grade: Automotive Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 180 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3679 шт: термін постачання 21-31 дні (днів) |
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PMV164ENER | Nexperia USA Inc. |
Description: PMV164ENE/SOT23/TO-236ABInput Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 640mW (Ta), 5.8W (Tc) Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PMV164ENER | Nexperia USA Inc. |
Description: PMV164ENE/SOT23/TO-236ABInput Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 640mW (Ta), 5.8W (Tc) Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| PMV28ENER | Nexperia USA Inc. |
Description: PMV28ENE/SOT23/TO-236ABRds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 660mW (Ta), 8.3W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| PMV28ENER | Nexperia USA Inc. |
Description: PMV28ENE/SOT23/TO-236ABTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 660mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) FET Type: N-Channel Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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NXV90EPR | Nexperia USA Inc. |
Description: NXV90EP/SOT23/TO-236ABPart Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 340mW (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NXV90EPR | Nexperia USA Inc. |
Description: NXV90EP/SOT23/TO-236ABDrive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 340mW (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AUP2G34GM,115 | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 3.6V 6XSONPart Status: Active Supplier Device Package: 6-XSON, SOT886 (1.45x1) Current - Output High, Low: 4mA, 4mA Number of Bits per Element: 1 Voltage - Supply: 0.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 6-XFDFN Packaging: Cut Tape (CT) |
на замовлення 6368 шт: термін постачання 21-31 дні (днів) |
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2PA1774QM,315 | Nexperia USA Inc. |
Description: NEXPERIA 2PA1774QM - SMALL SIGNA |
на замовлення 118982 шт: термін постачання 21-31 дні (днів) |
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PMEG2015EPK,315 | Nexperia USA Inc. |
Description: DIODE SCHOTTK 20V 1.5A DFN1608D2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 120pF @ 1V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DFN1608D-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1.5 A Current - Reverse Leakage @ Vr: 350 µA @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PZU3.6BL,315 | Nexperia USA Inc. |
Description: PZU3.6BL - SINGLE ZENER DIODES |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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PZU6.8B2L,315 | Nexperia USA Inc. |
Description: NEXPERIA PZU6.8B2L - ZENER DIODETolerance: ±2% Packaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V |
на замовлення 89977 шт: термін постачання 21-31 дні (днів) |
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PZU2.7BL,315 | Nexperia USA Inc. |
Description: PZU2.7BL - SINGLE ZENER DIODESTolerance: ±5% Packaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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PZU22BL,315 | Nexperia USA Inc. |
Description: PZUXBL SERIES - SINGLE ZENER DIOTolerance: ±5% Packaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 17 V |
на замовлення 130000 шт: термін постачання 21-31 дні (днів) |
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PZU7.5BL,315 | Nexperia USA Inc. |
Description: PZUXBL SERIES - SINGLE ZENER DIO |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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LD6805K/28P,115 | Nexperia USA Inc. |
Description: IC REG LIN 2.8V 150MA DFN1010C-4Current - Supply (Max): 150 µA Protection Features: Over Current, Transient Voltage Voltage Dropout (Max): 0.25V @ 150mA PSRR: 75dB (1kHz) Part Status: Obsolete Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: DFN1010C-4 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 35 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UDFN Exposed Pad Packaging: Bulk |
на замовлення 8753 шт: термін постачання 21-31 дні (днів) |
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BZX8850S-C5V6YL | Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 365MW DFN1006BDCurrent - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 365 mW Supplier Device Package: DFN1006BD-2 Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX8850S-C5V6YL | Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 365MW DFN1006BDCurrent - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 365 mW Supplier Device Package: DFN1006BD-2 Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 6557 шт: термін постачання 21-31 дні (днів) |
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BZX8850S-C5V6-QYL | Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 365MW DFN1006BDQualification: AEC-Q101 Grade: Automotive Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 365 mW Part Status: Active Supplier Device Package: DFN1006BD-2 Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: SOD-882 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX8850S-C5V6-QYL | Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 365MW DFN1006BDQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 365 mW Part Status: Active Supplier Device Package: DFN1006BD-2 Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: SOD-882 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 9380 шт: термін постачання 21-31 дні (днів) |
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BZX8450-C5V6-QR | Nexperia USA Inc. |
Description: BZX8450-C5V6-Q/SOT23/TO-236ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX8450-C5V6-QR | Nexperia USA Inc. |
Description: BZX8450-C5V6-Q/SOT23/TO-236ABPackaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% |
на замовлення 2170 шт: термін постачання 21-31 дні (днів) |
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BZX8450-C9V1-QR | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 250MW TO236ABQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Tape & Reel (TR) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BZX8450-C9V1-QR | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 250MW TO236ABQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 23432 шт: термін постачання 21-31 дні (днів) |
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BZX38450-C9V1-QX | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 300MW SOD323Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±5% Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX38450-C9V1-QX | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 300MW SOD323Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±5% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2407 шт: термін постачання 21-31 дні (днів) |
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BZX8850S-C9V1YL | Nexperia USA Inc. |
Description: BZX8850S-C9V1/SOD882BD/XSON2 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX8850S-C9V1YL | Nexperia USA Inc. |
Description: BZX8850S-C9V1/SOD882BD/XSON2 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZB84-B2V7,215 | Nexperia USA Inc. |
Description: DIODE ZENER ARRAY 2.7V SOT23 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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PMEG100T20ELXDX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 2A SOD323HPCurrent - Reverse Leakage @ Vr: 600 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD323HP Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 120pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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PMEG100T20ELXDX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 2A SOD323HPCurrent - Reverse Leakage @ Vr: 600 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD323HP Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 120pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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PMEG100V080ELPE-QZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 8A CFP15BQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: CFP15B Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 97pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 10 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PMEG100V080ELPE-QZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 8A CFP15BQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: CFP15B Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 97pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 10 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 8215 шт: термін постачання 21-31 дні (днів) |
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PMEG100T120ELPEZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 12A CFP15BCurrent - Reverse Leakage @ Vr: 6 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 12 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: CFP15B Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 28 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG100T120ELPEZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 12A CFP15BCurrent - Reverse Leakage @ Vr: 6 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 12 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: CFP15B Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 28 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 4995 шт: термін постачання 21-31 дні (днів) |
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PMEG100T10ELR-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 1A SOD123WCurrent - Reverse Leakage @ Vr: 900 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 125pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 11.5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMEG100T10ELR-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 1A SOD123WCurrent - Reverse Leakage @ Vr: 900 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 125pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 11.5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4514 шт: термін постачання 21-31 дні (днів) |
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PMEG45T10EXDX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 45V 1A SOD323HPCurrent - Reverse Leakage @ Vr: 20 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: 175°C Supplier Device Package: SOD323HP Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 80pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 8 ns Package / Case: 2-SMD, Flat Lead Packaging: Tape & Reel (TR) Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG45T10EXDX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 45V 1A SOD323HPCurrent - Reverse Leakage @ Vr: 20 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 80pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 8 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) Operating Temperature - Junction: 175°C Supplier Device Package: SOD323HP |
на замовлення 1491 шт: термін постачання 21-31 дні (днів) |
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PMN15ENEX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 6.4A 6TSOPGate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 667mW (Ta), 7.5W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMN15ENEX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 6.4A 6TSOPDrain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 667mW (Ta), 7.5W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMBT4401/S911,215 | Nexperia USA Inc. |
Description: TRANS NPN 40V 0.6A SOT23-3Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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BC857AQCZ | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1412D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 850mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
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BC857AQC-QZ | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1412D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
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BC857AQC-QZ | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1412D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 360 mW Qualification: AEC-Q101 |
на замовлення 3994 шт: термін постачання 21-31 дні (днів) |
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PDTA123JQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNResistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 180 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTA123JQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNResistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 180 MHz |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTA123JQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTA123JQCZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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74LV1T04GW125 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74LV1T04GW - SINGLE |
товару немає в наявності |
Мінімальне замовлення: 4014 шт В кошику од. на суму грн. |
| CBT3257ADS,112 |
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Виробник: Nexperia USA Inc.
Description: IC MUX/DEMUX 4 X 2:1 16-SSOP
Packaging: Bulk
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SSOP
Description: IC MUX/DEMUX 4 X 2:1 16-SSOP
Packaging: Bulk
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 347+ | 59.10 грн |
| CBT3257ABQ115 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA CBT3257ABQ - MULTIP
Description: NOW NEXPERIA CBT3257ABQ - MULTIP
товару немає в наявності
Мінімальне замовлення: 2581 шт
В кошику
од. на суму грн.
| CBT3257AD |
Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA CBT3257AD - MULTIPL
Description: NOW NEXPERIA CBT3257AD - MULTIPL
товару немає в наявності
Мінімальне замовлення: 1548 шт
В кошику
од. на суму грн.
| 74AHCT377PW,118 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 3 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 3 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 17045 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 406+ | 49.53 грн |
| 74CBTLVD3245PW,118 |
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Виробник: Nexperia USA Inc.
Description: IC BUS SWITCH 8 X 1:1 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUS SWITCH 8 X 1:1 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 2472 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 13+ | 24.82 грн |
| 25+ | 22.20 грн |
| 100+ | 18.14 грн |
| 250+ | 16.85 грн |
| 500+ | 16.07 грн |
| 1000+ | 15.37 грн |
| PMEG6010ER/S501X |
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Виробник: Nexperia USA Inc.
Description: PMEG6010ER - 1 A LOW VF MEGA SCH
Description: PMEG6010ER - 1 A LOW VF MEGA SCH
товару немає в наявності
В кошику
од. на суму грн.
| PMEG6010EP/6X |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 1A SOD128/CFP5
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 1A SOD128/CFP5
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NXV100XPR |
![]() |
Виробник: Nexperia USA Inc.
Description: NXV100XP/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 15 V
Description: NXV100XP/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NXV100XPR |
![]() |
Виробник: Nexperia USA Inc.
Description: NXV100XP/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 15 V
Description: NXV100XP/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| PDTA114YQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 25000 шт
В кошику
од. на суму грн.
| PDTA114YQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3679 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 19.03 грн |
| 28+ | 10.92 грн |
| 100+ | 6.75 грн |
| 500+ | 4.64 грн |
| 1000+ | 4.09 грн |
| 2000+ | 3.63 грн |
| PMV164ENER |
![]() |
Виробник: Nexperia USA Inc.
Description: PMV164ENE/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 640mW (Ta), 5.8W (Tc)
Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: PMV164ENE/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 640mW (Ta), 5.8W (Tc)
Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.23 грн |
| 6000+ | 5.42 грн |
| PMV164ENER |
![]() |
Виробник: Nexperia USA Inc.
Description: PMV164ENE/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 640mW (Ta), 5.8W (Tc)
Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: PMV164ENE/SOT23/TO-236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 640mW (Ta), 5.8W (Tc)
Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.34 грн |
| 18+ | 17.41 грн |
| 50+ | 12.51 грн |
| 100+ | 10.23 грн |
| PMV28ENER |
![]() |
Виробник: Nexperia USA Inc.
Description: PMV28ENE/SOT23/TO-236AB
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
Description: PMV28ENE/SOT23/TO-236AB
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMV28ENER |
![]() |
Виробник: Nexperia USA Inc.
Description: PMV28ENE/SOT23/TO-236AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: PMV28ENE/SOT23/TO-236AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.92 грн |
| 13+ | 24.28 грн |
| NXV90EPR |
![]() |
Виробник: Nexperia USA Inc.
Description: NXV90EP/SOT23/TO-236AB
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: NXV90EP/SOT23/TO-236AB
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NXV90EPR |
![]() |
Виробник: Nexperia USA Inc.
Description: NXV90EP/SOT23/TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Description: NXV90EP/SOT23/TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
товару немає в наявності
В кошику
од. на суму грн.
| 74AUP2G34GM,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 3.6V 6XSON
Part Status: Active
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Description: IC BUFFER NON-INVERT 3.6V 6XSON
Part Status: Active
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
на замовлення 6368 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.44 грн |
| 28+ | 11.15 грн |
| 50+ | 9.06 грн |
| 100+ | 7.89 грн |
| 2PA1774QM,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: NEXPERIA 2PA1774QM - SMALL SIGNA
Description: NEXPERIA 2PA1774QM - SMALL SIGNA
на замовлення 118982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8410+ | 2.96 грн |
| PMEG2015EPK,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 20V 1.5A DFN1608D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 350 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTK 20V 1.5A DFN1608D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 350 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PZU3.6BL,315 |
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Виробник: Nexperia USA Inc.
Description: PZU3.6BL - SINGLE ZENER DIODES
Description: PZU3.6BL - SINGLE ZENER DIODES
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15000+ | 1.48 грн |
| PZU6.8B2L,315 |
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Виробник: Nexperia USA Inc.
Description: NEXPERIA PZU6.8B2L - ZENER DIODE
Tolerance: ±2%
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Description: NEXPERIA PZU6.8B2L - ZENER DIODE
Tolerance: ±2%
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
на замовлення 89977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10764+ | 2.38 грн |
| PZU2.7BL,315 |
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Виробник: Nexperia USA Inc.
Description: PZU2.7BL - SINGLE ZENER DIODES
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: PZU2.7BL - SINGLE ZENER DIODES
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15000+ | 1.49 грн |
| PZU22BL,315 |
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Виробник: Nexperia USA Inc.
Description: PZUXBL SERIES - SINGLE ZENER DIO
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 17 V
Description: PZUXBL SERIES - SINGLE ZENER DIO
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 17 V
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12070+ | 1.48 грн |
| PZU7.5BL,315 |
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Виробник: Nexperia USA Inc.
Description: PZUXBL SERIES - SINGLE ZENER DIO
Description: PZUXBL SERIES - SINGLE ZENER DIO
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15000+ | 1.48 грн |
| LD6805K/28P,115 |
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Виробник: Nexperia USA Inc.
Description: IC REG LIN 2.8V 150MA DFN1010C-4
Current - Supply (Max): 150 µA
Protection Features: Over Current, Transient Voltage
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: DFN1010C-4
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 35 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Bulk
Description: IC REG LIN 2.8V 150MA DFN1010C-4
Current - Supply (Max): 150 µA
Protection Features: Over Current, Transient Voltage
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: DFN1010C-4
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 35 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Bulk
на замовлення 8753 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1068+ | 19.41 грн |
| BZX8850S-C5V6YL |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 365MW DFN1006BD
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 5.6V 365MW DFN1006BD
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| BZX8850S-C5V6YL |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 365MW DFN1006BD
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 5.6V 365MW DFN1006BD
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 6557 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.79 грн |
| 22+ | 13.97 грн |
| 50+ | 10.00 грн |
| 100+ | 8.17 грн |
| BZX8850S-C5V6-QYL |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 365MW DFN1006BD
Qualification: AEC-Q101
Grade: Automotive
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Part Status: Active
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-882
Description: DIODE ZENER 5.6V 365MW DFN1006BD
Qualification: AEC-Q101
Grade: Automotive
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Part Status: Active
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-882
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZX8850S-C5V6-QYL |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 365MW DFN1006BD
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Part Status: Active
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 5.6V 365MW DFN1006BD
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Part Status: Active
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 9380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.99 грн |
| 24+ | 13.21 грн |
| 50+ | 9.44 грн |
| 100+ | 7.71 грн |
| BZX8450-C5V6-QR |
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Виробник: Nexperia USA Inc.
Description: BZX8450-C5V6-Q/SOT23/TO-236AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: BZX8450-C5V6-Q/SOT23/TO-236AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX8450-C5V6-QR |
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Виробник: Nexperia USA Inc.
Description: BZX8450-C5V6-Q/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Description: BZX8450-C5V6-Q/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
на замовлення 2170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.48 грн |
| 40+ | 7.79 грн |
| 100+ | 4.82 грн |
| 500+ | 3.29 грн |
| 1000+ | 2.89 грн |
| BZX8450-C9V1-QR |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 250MW TO236AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.1V 250MW TO236AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.29 грн |
| 6000+ | 2.83 грн |
| BZX8450-C9V1-QR |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 250MW TO236AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 9.1V 250MW TO236AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 23432 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 32+ | 9.70 грн |
| 50+ | 6.92 грн |
| 100+ | 5.63 грн |
| BZX38450-C9V1-QX |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 300MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ZENER 9.1V 300MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX38450-C9V1-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 300MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ZENER 9.1V 300MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 32+ | 9.62 грн |
| 50+ | 6.84 грн |
| 100+ | 5.57 грн |
| BZX8850S-C9V1YL |
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Виробник: Nexperia USA Inc.
Description: BZX8850S-C9V1/SOD882BD/XSON2
Description: BZX8850S-C9V1/SOD882BD/XSON2
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.50 грн |
| BZX8850S-C9V1YL |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX8850S-C9V1/SOD882BD/XSON2
Description: BZX8850S-C9V1/SOD882BD/XSON2
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.75 грн |
| 15+ | 21.30 грн |
| 100+ | 11.29 грн |
| 500+ | 6.98 грн |
| 1000+ | 4.74 грн |
| 2000+ | 4.28 грн |
| 5000+ | 3.66 грн |
| BZB84-B2V7,215 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 2.7V SOT23
Description: DIODE ZENER ARRAY 2.7V SOT23
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11823+ | 2.29 грн |
| PMEG100T20ELXDX |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 2A SOD323HP
Current - Reverse Leakage @ Vr: 600 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD323HP
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 2A SOD323HP
Current - Reverse Leakage @ Vr: 600 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD323HP
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 5.45 грн |
| PMEG100T20ELXDX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 2A SOD323HP
Current - Reverse Leakage @ Vr: 600 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD323HP
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 2A SOD323HP
Current - Reverse Leakage @ Vr: 600 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD323HP
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.96 грн |
| 20+ | 16.03 грн |
| 100+ | 10.07 грн |
| 500+ | 7.02 грн |
| 1000+ | 6.23 грн |
| 2000+ | 5.57 грн |
| PMEG100V080ELPE-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 8A CFP15B
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 97pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 8A CFP15B
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 97pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 13.89 грн |
| PMEG100V080ELPE-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 8A CFP15B
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 97pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 8A CFP15B
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 97pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 8215 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 37.19 грн |
| 100+ | 24.07 грн |
| 500+ | 17.27 грн |
| 1000+ | 13.29 грн |
| 2000+ | 13.17 грн |
| PMEG100T120ELPEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 12A CFP15B
Current - Reverse Leakage @ Vr: 6 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 12A CFP15B
Current - Reverse Leakage @ Vr: 6 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PMEG100T120ELPEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 12A CFP15B
Current - Reverse Leakage @ Vr: 6 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 12A CFP15B
Current - Reverse Leakage @ Vr: 6 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15B
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 62.64 грн |
| 10+ | 52.00 грн |
| 100+ | 35.99 грн |
| 500+ | 28.22 грн |
| 1000+ | 24.02 грн |
| 2000+ | 21.39 грн |
| PMEG100T10ELR-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 1A SOD123W
Current - Reverse Leakage @ Vr: 900 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 11.5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 100V 1A SOD123W
Current - Reverse Leakage @ Vr: 900 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 11.5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.52 грн |
| PMEG100T10ELR-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 1A SOD123W
Current - Reverse Leakage @ Vr: 900 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 11.5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 100V 1A SOD123W
Current - Reverse Leakage @ Vr: 900 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 11.5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4514 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.89 грн |
| 15+ | 20.39 грн |
| 50+ | 14.71 грн |
| 100+ | 12.07 грн |
| 500+ | 9.03 грн |
| PMEG45T10EXDX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 1A SOD323HP
Current - Reverse Leakage @ Vr: 20 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD323HP
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 8 ns
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 45V 1A SOD323HP
Current - Reverse Leakage @ Vr: 20 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD323HP
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 8 ns
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику
од. на суму грн.
| PMEG45T10EXDX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 1A SOD323HP
Current - Reverse Leakage @ Vr: 20 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD323HP
Description: DIODE SCHOTTKY 45V 1A SOD323HP
Current - Reverse Leakage @ Vr: 20 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD323HP
на замовлення 1491 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 14+ | 22.53 грн |
| 100+ | 11.38 грн |
| 500+ | 8.71 грн |
| 1000+ | 6.46 грн |
| PMN15ENEX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 6.4A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Description: MOSFET N-CH 30V 6.4A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMN15ENEX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 6.4A 6TSOP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Description: MOSFET N-CH 30V 6.4A 6TSOP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| PMBT4401/S911,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8696+ | 2.08 грн |
| BC857AQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| BC857AQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| BC857AQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 360 mW
Qualification: AEC-Q101
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.44 грн |
| 30+ | 10.31 грн |
| 100+ | 6.38 грн |
| 500+ | 4.38 грн |
| 1000+ | 3.86 грн |
| 2000+ | 3.42 грн |
| PDTA123JQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 3.21 грн |
| PDTA123JQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.24 грн |
| 30+ | 10.46 грн |
| 100+ | 6.50 грн |
| 500+ | 4.47 грн |
| 1000+ | 3.94 грн |
| 2000+ | 3.50 грн |
| PDTA123JQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.88 грн |
| PDTA123JQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 34+ | 9.09 грн |
| 100+ | 5.64 грн |
| 500+ | 3.87 грн |
| 1000+ | 3.41 грн |
| 2000+ | 3.02 грн |
| 74LV1T04GW125 |
![]() |
Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74LV1T04GW - SINGLE
Description: NOW NEXPERIA 74LV1T04GW - SINGLE
товару немає в наявності
Мінімальне замовлення: 4014 шт
В кошику
од. на суму грн.



























