| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMBTA13,215 | NEXPERIA |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Kind of transistor: Darlington Current gain: 5000...10000 Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PMBTA44-QR | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 400V; 0.3A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.3A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Application: automotive industry Frequency: 20MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PBHV8515QAZ | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 150V; 0.5A; 325mW; DFN1010D-3,SOT1215 Mounting: SMD Case: DFN1010D-3; SOT1215 Kind of package: reel; tape Application: automotive industry Power dissipation: 325mW Collector current: 0.5A Type of transistor: NPN Pulsed collector current: 1A Collector-emitter voltage: 150V Current gain: 215 Polarisation: bipolar Frequency: 75MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BSP225,115 | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -250V; -0.225A; 1.5W; SC73,SOT223 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Case: SC73; SOT223 Mounting: SMD Polarisation: unipolar Drain-source voltage: -250V Drain current: -0.225A Power dissipation: 1.5W On-state resistance: 15Ω Gate-source voltage: ±20V |
на замовлення 126 шт: термін постачання 14-30 дні (днів) |
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PTVS15VS1UR,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Max. forward impulse current: 16.4A Operating temperature: max. 150°C |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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PTVS15VS1UTR,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Max. forward impulse current: 16.4A Operating temperature: max. 185°C |
на замовлення 964 шт: термін постачання 14-30 дні (днів) |
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| PTVS15VU1UPAZ | NEXPERIA |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061 Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Semiconductor structure: unidirectional Case: SOT1061 Mounting: SMD Leakage current: 50nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS16,235 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS16-QR | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMBT3946YPN,115 | NEXPERIA |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 60/40V Collector current: 0.2A Power dissipation: 0.35W Case: SC88; SOT363; TSSOP6 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PMBT3946VPN,115 | NEXPERIA |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 60/40V Collector current: 0.2A Power dissipation: 0.36W Case: SOT666 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
74HCT166D,653 | NEXPERIA |
Category: Shift registersDescription: IC: digital; 8bit,shift register,parallel in,serial output Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel in; serial output; shift register Technology: CMOS Mounting: SMD Case: SO16 Family: AHCT Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
на замовлення 117 шт: термін постачання 14-30 дні (днів) |
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74HCT597DB,112 | NEXPERIA |
Category: Shift registersDescription: IC: digital; 8bit,shift register,parallel in,serial output Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel in; serial output; shift register Technology: CMOS; TTL Mounting: SMD Case: SSOP16 Family: HCT Kind of package: tube |
на замовлення 139 шт: термін постачання 14-30 дні (днів) |
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| BZX84-C15.215 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 15V; SMD; SOT23; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Max. forward voltage: 0.9V Max. load current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAT54H,115 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123F; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Leakage current: 2µA Capacitance: 10pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT174D,653 | NEXPERIA |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 6; CMOS,TTL; SMD; SO16; HCT; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: SO16 Operating temperature: -40...125°C Family: HCT Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74HCT174PW,118 | NEXPERIA |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Operating temperature: -40...125°C Family: HCT Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74HCT03PW,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Family: HCT Kind of output: open drain Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Technology: CMOS; TTL Delay time: 36ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX52-10,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1.35W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.35W Case: SC62; SOT89 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 145MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX52-16,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1.35W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.35W Case: SC62; SOT89 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX52,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1.35W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.35W Case: SC62; SOT89 Current gain: 63...250 Mounting: SMD Kind of package: reel; tape Frequency: 145MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX52TF | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1.1W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.1W Case: SC62; SOT89 Current gain: 63...250 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMF170XP,115 | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.7A Power dissipation: 0.36W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 6875 шт: термін постачання 14-30 дні (днів) |
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HEF4528BT,653 | NEXPERIA |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 5; CMOS; 3÷15VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 5 Technology: CMOS Supply voltage: 3...15V DC Mounting: SMD Case: SO16 Family: HEF4000B Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 600µA |
на замовлення 1814 шт: термін постачання 14-30 дні (днів) |
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PNS40010ER,115 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V Type of diode: rectifying Case: SOD123W Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.4A Semiconductor structure: single diode Max. forward voltage: 0.93V Max. forward impulse current: 32A Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Reverse recovery time: 1.8µs Leakage current: 0.5mA |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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| PMBTA13,215 |
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Виробник: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of transistor: Darlington
Current gain: 5000...10000
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of transistor: Darlington
Current gain: 5000...10000
Frequency: 125MHz
товару немає в наявності
В кошику
од. на суму грн.
| PMBTA44-QR |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Frequency: 20MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Frequency: 20MHz
товару немає в наявності
В кошику
од. на суму грн.
| PBHV8515QAZ |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 0.5A; 325mW; DFN1010D-3,SOT1215
Mounting: SMD
Case: DFN1010D-3; SOT1215
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 325mW
Collector current: 0.5A
Type of transistor: NPN
Pulsed collector current: 1A
Collector-emitter voltage: 150V
Current gain: 215
Polarisation: bipolar
Frequency: 75MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 0.5A; 325mW; DFN1010D-3,SOT1215
Mounting: SMD
Case: DFN1010D-3; SOT1215
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 325mW
Collector current: 0.5A
Type of transistor: NPN
Pulsed collector current: 1A
Collector-emitter voltage: 150V
Current gain: 215
Polarisation: bipolar
Frequency: 75MHz
товару немає в наявності
В кошику
од. на суму грн.
| BSP225,115 |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.225A; 1.5W; SC73,SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC73; SOT223
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.225A
Power dissipation: 1.5W
On-state resistance: 15Ω
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.225A; 1.5W; SC73,SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC73; SOT223
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.225A
Power dissipation: 1.5W
On-state resistance: 15Ω
Gate-source voltage: ±20V
на замовлення 126 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.76 грн |
| 12+ | 36.33 грн |
| 50+ | 25.39 грн |
| PTVS15VS1UR,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Max. forward impulse current: 16.4A
Operating temperature: max. 150°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Max. forward impulse current: 16.4A
Operating temperature: max. 150°C
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.43 грн |
| PTVS15VS1UTR,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Max. forward impulse current: 16.4A
Operating temperature: max. 185°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Max. forward impulse current: 16.4A
Operating temperature: max. 185°C
на замовлення 964 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.39 грн |
| 39+ | 10.77 грн |
| 43+ | 9.77 грн |
| 100+ | 9.27 грн |
| 250+ | 8.77 грн |
| 500+ | 8.02 грн |
| PTVS15VU1UPAZ |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
товару немає в наявності
В кошику
од. на суму грн.
| BAS16,235 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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В кошику
од. на суму грн.
| BAS16-QR |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
товару немає в наявності
В кошику
од. на суму грн.
| PMBT3946YPN,115 |
![]() |
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SC88; SOT363; TSSOP6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SC88; SOT363; TSSOP6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
| PMBT3946VPN,115 |
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Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| 74HCT166D,653 |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS
Mounting: SMD
Case: SO16
Family: AHCT
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS
Mounting: SMD
Case: SO16
Family: AHCT
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
на замовлення 117 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.97 грн |
| 11+ | 39.92 грн |
| 100+ | 29.90 грн |
| 74HCT597DB,112 |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP16
Family: HCT
Kind of package: tube
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP16
Family: HCT
Kind of package: tube
на замовлення 139 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.76 грн |
| 10+ | 47.27 грн |
| 25+ | 43.76 грн |
| 78+ | 41.76 грн |
| BZX84-C15.215 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; SOT23; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; SOT23; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.2A
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| BAT54H,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 2µA
Capacitance: 10pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 2µA
Capacitance: 10pF
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| 74HCT174D,653 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS,TTL; SMD; SO16; HCT; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS,TTL; SMD; SO16; HCT; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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| 74HCT174PW,118 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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| 74HCT03PW,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of output: open drain
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Delay time: 36ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of output: open drain
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS; TTL
Delay time: 36ns
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| BCX52-10,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
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| BCX52-16,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
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| BCX52,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
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| BCX52TF |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.1W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.1W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.1W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.1W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
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| PMF170XP,115 |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.36W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.36W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 6875 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.59 грн |
| 43+ | 9.77 грн |
| 50+ | 8.52 грн |
| 100+ | 7.20 грн |
| 250+ | 5.73 грн |
| 500+ | 4.33 грн |
| 1000+ | 3.89 грн |
| 3000+ | 3.60 грн |
| HEF4528BT,653 |
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Виробник: NEXPERIA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 5; CMOS; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 5
Technology: CMOS
Supply voltage: 3...15V DC
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 600µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 5; CMOS; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 5
Technology: CMOS
Supply voltage: 3...15V DC
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 600µA
на замовлення 1814 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.78 грн |
| 17+ | 24.80 грн |
| 25+ | 23.55 грн |
| PNS40010ER,115 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Type of diode: rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.4A
Semiconductor structure: single diode
Max. forward voltage: 0.93V
Max. forward impulse current: 32A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Type of diode: rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.4A
Semiconductor structure: single diode
Max. forward voltage: 0.93V
Max. forward impulse current: 32A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
на замовлення 9 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.37 грн |













