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PSMN2R2-40PS,127 PSMN2R2-40PS,127 NEXPERIA PSMN2R2-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R0-60PS,127 PSMN2R0-60PS,127 NEXPERIA PSMN2R0-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R5-60PLQ PSMN2R5-60PLQ NEXPERIA PSMN2R5-60PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R8-40YSDX NEXPERIA PSMN2R8-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R4-30MLDX NEXPERIA PSMN2R4-30MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
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PSMN2R0-100SSFJ NEXPERIA PSMN2R0-100SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R8-80BS,118 NEXPERIA PSMN2R8-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-25MLDX NEXPERIA PSMN2R0-25MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-60PSRQ NEXPERIA PSMN2R0-60PSR.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R2-40YSDX NEXPERIA PSMN2R2-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R7-30BL,118 NEXPERIA PSMN2R7-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R8-25MLC,115 NEXPERIA PSMN2R8-25MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-25YLDX NEXPERIA PSMN2R0-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-30YL,115 NEXPERIA PSMN2R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-30YLDX NEXPERIA PSMN2R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-40YLDX NEXPERIA PSMN2R0-40YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R2-25YLC,115 PSMN2R2-25YLC,115 NEXPERIA PSMN2R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R2-40BS,118 NEXPERIA PHGLS24325-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 962A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R5-30YL,115 NEXPERIA PSMN2R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R5-40YLDX NEXPERIA PSMN2R5-40YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R6-30YLC,115 NEXPERIA PSMN2R6-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R6-60PSQ PSMN2R6-60PSQ NEXPERIA PSMN2R6-60PS.pdf PHGL-S-A0001060194-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R9-25YLC,115 NEXPERIA PSMN2R9-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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PMBTA56,215 PMBTA56,215 NEXPERIA PMBTA56.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: 7 inch reel; tape
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PMBTA56-QR PMBTA56-QR NEXPERIA PMBTA56-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Current gain: 100
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PUMB20,115 PUMB20,115 NEXPERIA PEMB20_PUMB20.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
50+8.47 грн
Мінімальне замовлення: 50 шт
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PUMB30,115 PUMB30,115 NEXPERIA PEMB30_PUMB30.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 160 шт:
термін постачання 14-30 дні (днів)
100+4.56 грн
120+3.56 грн
160+2.54 грн
Мінімальне замовлення: 100 шт
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74LVC2T45GN,115 NEXPERIA 74LVC_LVCH2T45.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC2T45GS-Q100X NEXPERIA 74LVC_LVCH2T45_Q100.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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74LVC2T45GS,115 NEXPERIA 74LVC_LVCH2T45.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC2T45GT-Q100X NEXPERIA 74LVC_LVCH2T45_Q100.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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74LVC2T45GT,115 NEXPERIA 74LVC_LVCH2T45.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC74AD,118 74LVC74AD,118 NEXPERIA 74LVC74AD,118.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; LVC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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74LVC74ABQ,115 NEXPERIA 74LVC74ABQ,115.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74LVC74APW,118 74LVC74APW,118 NEXPERIA 74LVC74APW,118.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74AHCT14D.112 74AHCT14D.112 NEXPERIA 74AHCT14D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; AHCT; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Kind of package: tube
Technology: CMOS; TTL
Manufacturer series: AHCT
товару немає в наявності
 Мінімальне замовлення: 3 шт
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74AHCT14D,118 74AHCT14D,118 NEXPERIA 74AHCT14D,118.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Kind of package: reel; tape
Technology: CMOS; TTL
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BSS63,215 BSS63,215 NEXPERIA BSS63.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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BSS63-QR NEXPERIA BSS63-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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BAS16W.115 BAS16W.115 NEXPERIA BAS16_SER.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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 Мінімальне замовлення: 25 шт
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BAS16W-QX BAS16W-QX NEXPERIA BAS16W-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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BAS16WF BAS16WF NEXPERIA BAS16_SER.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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PCA9555PWJ NEXPERIA PCA9555.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
74HC1G86GW,125 74HC1G86GW,125 NEXPERIA 74HC1G86G-DTE.PDF Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: TSSOP5
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: Mini Logic
Technology: CMOS
на замовлення 3002 шт:
термін постачання 14-30 дні (днів)
56+8.20 грн
81+5.25 грн
96+4.44 грн
108+3.92 грн
250+3.61 грн
500+3.45 грн
1000+3.10 грн
3000+3.07 грн
Мінімальне замовлення: 56 шт
В кошику  од. на суму  грн.
PBSS4350T-QVL PBSS4350T-QVL NEXPERIA PBSS4350T-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Application: automotive industry
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 Мінімальне замовлення: 10000 шт
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PBSS4350TVL PBSS4350TVL NEXPERIA PBSS4350T.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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NCR320ZX NCR320ZX NEXPERIA NCR320Z_NCR321Z.pdf Category: LED drivers
Description: IC: driver; LED driver; SC73,SOT223; 11mA; 16V; Ch: 1; Uin: 25V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 11mA
Case: SC73; SOT223
Mounting: SMD
Number of channels: 1
Operating temperature: -55...150°C
Maximum output current: 0.3A
Input voltage: 25V
Output voltage: 16V
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BZV55-B6V2,115 BZV55-B6V2,115 NEXPERIA BZV55_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 6.2V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
на замовлення 1800 шт:
термін постачання 14-30 дні (днів)
84+5.47 грн
91+4.66 грн
118+3.61 грн
133+3.19 грн
500+2.52 грн
1000+2.28 грн
Мінімальне замовлення: 84 шт
В кошику  од. на суму  грн.
BZV55-B6V8,115 BZV55-B6V8,115 NEXPERIA BZV55_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 6.8V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
17+24.55 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
PTVS3V3P1UP,115 PTVS3V3P1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 3.3V
Operating temperature: max. 150°C
Leakage current: 5µA
на замовлення 8993 шт:
термін постачання 14-30 дні (днів)
16+29.17 грн
20+21.59 грн
25+19.30 грн
100+16.17 грн
250+14.56 грн
500+13.46 грн
1000+12.87 грн
3000+12.19 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
PTVS3V3P1UTP,115 PTVS3V3P1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 3.3V
Operating temperature: max. 185°C
Leakage current: 5µA
на замовлення 1955 шт:
термін постачання 14-30 дні (днів)
17+28.26 грн
20+21.59 грн
25+19.13 грн
100+16.34 грн
250+14.64 грн
500+13.63 грн
1000+12.95 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
BZA856A,115 BZA856A,115 NEXPERIA BZA800A_ser.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; Ch: 4; ESD
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A; SOT353
Max. off-state voltage: 5.6V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 2µA
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
16+29.17 грн
21+20.23 грн
26+16.59 грн
100+13.88 грн
250+10.41 грн
500+9.40 грн
1000+8.72 грн
3000+8.30 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
BZA456A,115 BZA456A,115 NEXPERIA BZA456A.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; ESD; Ch: 4
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 3.75A
Max. off-state voltage: 5.6V
Peak pulse power dissipation: 24W
Application: automotive industry
Semiconductor structure: common anode; quadruple
Type of diode: TVS array
Number of channels: 4
Version: ESD
на замовлення 6720 шт:
термін постачання 14-30 дні (днів)
22+20.97 грн
27+16.08 грн
30+14.14 грн
100+12.61 грн
250+10.58 грн
500+9.57 грн
1000+8.80 грн
3000+8.38 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
MMBZ5V6AL,215 MMBZ5V6AL,215 NEXPERIA MMBZxAL_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 5.6V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Application: automotive industry
Version: ESD
Leakage current: 240nA
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BZA856AVL,115 NEXPERIA BZA800AVL_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Type of diode: TVS array
Max. forward impulse current: 3.5A
Peak pulse power dissipation: 6W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A; SOT353
Max. off-state voltage: 5.6V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 0.2µA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MM3Z4V7T1GX NEXPERIA MM3Z_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. load current: 0.2A
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BAS16L-QYL BAS16L-QYL NEXPERIA BAS16L-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN1006-2
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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 Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
BZX84-C6V8,215 BZX84-C6V8,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.8V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
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BZX84-C6V8-QR NEXPERIA BZX84-Q_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.8V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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74LVC1G53DP,125 74LVC1G53DP,125 NEXPERIA 74LVC1G53.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 2; IN: 2; CMOS,TTL; SMD
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: demultiplexer; multiplexer
Type of integrated circuit: digital
Family: LVC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Number of inputs: 2
Number of channels: 2
на замовлення 1659 шт:
термін постачання 14-30 дні (днів)
8+61.08 грн
10+47.49 грн
25+38.01 грн
100+28.44 грн
500+25.65 грн
1000+23.79 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
PSMN2R2-40PS,127 PSMN2R2-40PS.pdf
PSMN2R2-40PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R0-60PS,127 PSMN2R0-60PS.pdf
PSMN2R0-60PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R5-60PLQ PSMN2R5-60PL.pdf
PSMN2R5-60PLQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R8-40YSDX PSMN2R8-40YSD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R4-30MLDX PSMN2R4-30MLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
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PSMN2R0-100SSFJ PSMN2R0-100SSF.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-25MLDX PSMN2R0-25MLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-60PSRQ PSMN2R0-60PSR.pdf
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R2-40YSDX PSMN2R2-40YSD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R7-30BL,118 PSMN2R7-30BL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R8-25MLC,115 PSMN2R8-25MLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-25YLDX PSMN2R0-25YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-30YL,115 PSMN2R0-30YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-30YLDX PSMN2R0-30YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-40YLDX PSMN2R0-40YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R2-25YLC,115 PSMN2R2-25YLC.pdf
PSMN2R2-25YLC,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R2-40BS,118 PHGLS24325-1.pdf?t.download=true&u=5oefqw
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 962A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R5-30YL,115 PSMN2R5-30YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R5-40YLDX PSMN2R5-40YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R6-30YLC,115 PSMN2R6-30YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R6-60PSQ PSMN2R6-60PS.pdf PHGL-S-A0001060194-1.pdf?t.download=true&u=5oefqw
PSMN2R6-60PSQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R9-25YLC,115 PSMN2R9-25YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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PMBTA56,215 PMBTA56.pdf
PMBTA56,215
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: 7 inch reel; tape
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PMBTA56-QR PMBTA56-Q.pdf
PMBTA56-QR
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Current gain: 100
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PUMB20,115 PEMB20_PUMB20.pdf
PUMB20,115
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
50+8.47 грн
Мінімальне замовлення: 50 шт
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PUMB30,115 PEMB30_PUMB30.pdf
PUMB30,115
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 160 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
100+4.56 грн
120+3.56 грн
160+2.54 грн
Мінімальне замовлення: 100 шт
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74LVC2T45GN,115 74LVC_LVCH2T45.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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Мінімальне замовлення: 5000 шт
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74LVC2T45GS-Q100X 74LVC_LVCH2T45_Q100.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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Мінімальне замовлення: 5000 шт
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74LVC2T45GS,115 74LVC_LVCH2T45.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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Мінімальне замовлення: 5000 шт
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74LVC2T45GT-Q100X 74LVC_LVCH2T45_Q100.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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Мінімальне замовлення: 5000 шт
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74LVC2T45GT,115 74LVC_LVCH2T45.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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Мінімальне замовлення: 5000 шт
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74LVC74AD,118 74LVC74AD,118.pdf
74LVC74AD,118
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; LVC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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74LVC74ABQ,115 74LVC74ABQ,115.pdf
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74LVC74APW,118 74LVC74APW,118.pdf
74LVC74APW,118
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74AHCT14D.112 74AHCT14D.pdf
74AHCT14D.112
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; AHCT; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Kind of package: tube
Technology: CMOS; TTL
Manufacturer series: AHCT
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Мінімальне замовлення: 3 шт
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74AHCT14D,118 74AHCT14D,118.pdf
74AHCT14D,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Kind of package: reel; tape
Technology: CMOS; TTL
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BSS63,215 BSS63.pdf
BSS63,215
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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BSS63-QR BSS63-Q.pdf
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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BAS16W.115 BAS16_SER.pdf
BAS16W.115
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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Мінімальне замовлення: 25 шт
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BAS16W-QX BAS16W-Q.pdf
BAS16W-QX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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BAS16WF BAS16_SER.pdf
BAS16WF
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
товару немає в наявності
Мінімальне замовлення: 10000 шт
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PCA9555PWJ PCA9555.pdf
Виробник: NEXPERIA
Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
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74HC1G86GW,125 74HC1G86G-DTE.PDF
74HC1G86GW,125
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: TSSOP5
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: Mini Logic
Technology: CMOS
на замовлення 3002 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
56+8.20 грн
81+5.25 грн
96+4.44 грн
108+3.92 грн
250+3.61 грн
500+3.45 грн
1000+3.10 грн
3000+3.07 грн
Мінімальне замовлення: 56 шт
В кошику  од. на суму  грн.
PBSS4350T-QVL PBSS4350T-Q.pdf
PBSS4350T-QVL
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PBSS4350TVL PBSS4350T.pdf
PBSS4350TVL
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
NCR320ZX NCR320Z_NCR321Z.pdf
NCR320ZX
Виробник: NEXPERIA
Category: LED drivers
Description: IC: driver; LED driver; SC73,SOT223; 11mA; 16V; Ch: 1; Uin: 25V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 11mA
Case: SC73; SOT223
Mounting: SMD
Number of channels: 1
Operating temperature: -55...150°C
Maximum output current: 0.3A
Input voltage: 25V
Output voltage: 16V
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BZV55-B6V2,115 BZV55_SER.pdf
BZV55-B6V2,115
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 6.2V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
на замовлення 1800 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
84+5.47 грн
91+4.66 грн
118+3.61 грн
133+3.19 грн
500+2.52 грн
1000+2.28 грн
Мінімальне замовлення: 84 шт
В кошику  од. на суму  грн.
BZV55-B6V8,115 BZV55_SER.pdf
BZV55-B6V8,115
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 6.8V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
17+24.55 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
PTVS3V3P1UP,115 PTVSXP1UP_SER.pdf
PTVS3V3P1UP,115
Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 3.3V
Operating temperature: max. 150°C
Leakage current: 5µA
на замовлення 8993 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
16+29.17 грн
20+21.59 грн
25+19.30 грн
100+16.17 грн
250+14.56 грн
500+13.46 грн
1000+12.87 грн
3000+12.19 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
PTVS3V3P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS3V3P1UTP,115
Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 3.3V
Operating temperature: max. 185°C
Leakage current: 5µA
на замовлення 1955 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
17+28.26 грн
20+21.59 грн
25+19.13 грн
100+16.34 грн
250+14.64 грн
500+13.63 грн
1000+12.95 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
BZA856A,115 BZA800A_ser.pdf
BZA856A,115
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; Ch: 4; ESD
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A; SOT353
Max. off-state voltage: 5.6V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 2µA
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
16+29.17 грн
21+20.23 грн
26+16.59 грн
100+13.88 грн
250+10.41 грн
500+9.40 грн
1000+8.72 грн
3000+8.30 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
BZA456A,115 BZA456A.pdf
BZA456A,115
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; ESD; Ch: 4
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 3.75A
Max. off-state voltage: 5.6V
Peak pulse power dissipation: 24W
Application: automotive industry
Semiconductor structure: common anode; quadruple
Type of diode: TVS array
Number of channels: 4
Version: ESD
на замовлення 6720 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
22+20.97 грн
27+16.08 грн
30+14.14 грн
100+12.61 грн
250+10.58 грн
500+9.57 грн
1000+8.80 грн
3000+8.38 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
MMBZ5V6AL,215 MMBZxAL_SER.pdf
MMBZ5V6AL,215
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 5.6V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Number of channels: 2
Application: automotive industry
Version: ESD
Leakage current: 240nA
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В кошику  од. на суму  грн.
BZA856AVL,115 BZA800AVL_SERIES.pdf
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Type of diode: TVS array
Max. forward impulse current: 3.5A
Peak pulse power dissipation: 6W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A; SOT353
Max. off-state voltage: 5.6V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 0.2µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MM3Z4V7T1GX MM3Z_SER.pdf
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. load current: 0.2A
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BAS16L-QYL BAS16L-Q.pdf
BAS16L-QYL
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN1006-2
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
BZX84-C6V8,215 BZX84_SER.pdf
BZX84-C6V8,215
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.8V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
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BZX84-C6V8-QR BZX84-Q_SER.pdf
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.8V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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В кошику  од. на суму  грн.
74LVC1G53DP,125 74LVC1G53.pdf
74LVC1G53DP,125
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 2; IN: 2; CMOS,TTL; SMD
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: demultiplexer; multiplexer
Type of integrated circuit: digital
Family: LVC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Number of inputs: 2
Number of channels: 2
на замовлення 1659 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
8+61.08 грн
10+47.49 грн
25+38.01 грн
100+28.44 грн
500+25.65 грн
1000+23.79 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
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