| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BCV62A,215 | NEXPERIA |
 Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT143B Mounting: SMD Frequency: 100MHz Kind of package: reel; tape Semiconductor structure: common base Current gain: 100...250 |
на замовлення 820 шт: термін постачання 14-30 дні (днів) |
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BAS40-07,215 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT143B; SMD; 40V; 0.12A; reel,tape Type of diode: Schottky switching Case: SOT143B Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double independent Capacitance: 5pF Max. forward voltage: 1V Leakage current: 10µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT74,215 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT143B; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Semiconductor structure: double independent Mounting: SMD Case: SOT143B Max. off-state voltage: 30V Load current: 0.2A Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PRTR5V0U2AX,215 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2 Type of diode: TVS array Breakdown voltage: 6...9V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA Number of channels: 2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD2ETH-AXR | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2; ESD Type of diode: TVS array Breakdown voltage: 6...9V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA Number of channels: 2 Application: automotive industry; Ethernet Version: ESD Capacitance: 1.8pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PRTR5V0U2X,215 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 7.5V; unidirectional; SOT143B; Ch: 2 Type of diode: TVS array Breakdown voltage: 7.5V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA Number of channels: 2 Application: universal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAW101,215 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 600V; 250mA; 50ns; SOT143B; Ufmax: 1.1V; 0.35W Type of diode: switching Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: double independent Features of semiconductor devices: fast switching Case: SOT143B Max. forward voltage: 1.1V Max. forward impulse current: 4.5A Kind of package: reel; tape Power dissipation: 0.35W Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCV62C,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT143B Mounting: SMD Frequency: 100MHz Kind of package: reel; tape Semiconductor structure: common base Current gain: 420...800 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCV61B,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base Mounting: SMD Case: SOT143B Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Type of transistor: NPN x2 Semiconductor structure: common base Collector-emitter voltage: 30V Current gain: 200...450 Polarisation: bipolar Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCV61C,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base Mounting: SMD Case: SOT143B Kind of package: reel; tape Collector current: 0.1A Pulsed collector current: 0.2A Power dissipation: 0.25W Type of transistor: NPN x2 Semiconductor structure: common base Collector-emitter voltage: 30V Current gain: 420...800 Polarisation: bipolar Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCV65,215 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; 30V; 0.1A; 250mW; SOT143B Semiconductor structure: common base; common emitter Mounting: SMD Case: SOT143B Power dissipation: 0.25W Collector-emitter voltage: 30V Current gain: 75...800 Polarisation: bipolar Type of transistor: NPN / PNP Kind of package: reel; tape Collector current: 0.1A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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74LVC139BQ,115 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD Operating temperature: -40...125°C Family: LVC Kind of package: reel; tape Mounting: SMD Supply voltage: 1.2...3.6V DC Number of channels: 2 Number of inputs: 3 Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer Technology: CMOS; TTL Case: DHVQFN16 Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG6010CEH,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 9A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG6010CEH.115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 9A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
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74HC4002D,653 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: SO14 Operating temperature: -40...125°C Quiescent current: 40µA Family: HC Kind of package: reel; tape Delay time: 150ns Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 1830 шт: термін постачання 14-30 дні (днів) |
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74HC4002DB,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SSOP14; 2÷6VDC; tube; HC Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: SSOP14 Family: HC Kind of package: tube Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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74HC4002PW,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; tube; HC Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: HC Kind of package: tube Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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74HC4002PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -40...125°C Quiescent current: 40µA Family: HC Kind of package: reel; tape Delay time: 150ns Supply voltage: 2...6V DC Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| MJD2873-QJ | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 15W Case: DPAK; TO252 Current gain: 40...360 Mounting: SMD Kind of package: reel; tape Frequency: 65MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PSMN1R2-25YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 121W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 121W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMN0R7-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 235A Power dissipation: 158W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.47mΩ Mounting: SMD Gate charge: 110.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMN1R3-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 121W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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PSMN4R2-80YSEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 698A Power dissipation: 294W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PSMN4R8-100YSEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 115A Pulsed drain current: 653A Power dissipation: 294W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN1R0-40YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 198A; Idm: 1284A; 198W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 198A Pulsed drain current: 1284A Power dissipation: 198W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 1.93mΩ Mounting: SMD Gate charge: 127nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN1R2-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 209A Pulsed drain current: 1181A Power dissipation: 194W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 2.05mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN3R0-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 90A; Idm: 512A; 91W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 512A Power dissipation: 91W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 46.4nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN7R5-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 202A Power dissipation: 34W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN2R4-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 625A Power dissipation: 106W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 4mΩ Mounting: SMD Gate charge: 31.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMNR67-30YLEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 361A; Idm: 2.07kA; 333W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 361A Pulsed drain current: 2.07kA Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 185nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
| PSMNR58-30YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 347A; Idm: 1960A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 347A Pulsed drain current: 1960A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BUK7J1R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN1R0-40YSHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 277A; Idm: 1564A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 277A Pulsed drain current: 1564A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMNR51-25YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 380A Pulsed drain current: 2174A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.46mΩ Mounting: SMD Gate charge: 186nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMNR90-40YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 285A Pulsed drain current: 1613A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PUMD16,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 180...230MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
на замовлення 1877 шт: термін постачання 14-30 дні (днів) |
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PUMD20,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Frequency: 180...230MHz |
на замовлення 673 шт: термін постачання 14-30 дні (днів) |
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PUMD4-QX | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry |
на замовлення 2550 шт: термін постачання 14-30 дні (днів) |
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PUMD48-QX | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 80...100 Mounting: SMD Kind of package: reel; tape Base resistor: 47/2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 2850 шт: термін постачання 14-30 дні (днів) |
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PUMD14,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 180...230MHz Base resistor: 47kΩ |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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PUMD30,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: NPN / PNP Power dissipation: 0.3W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 2.2kΩ Case: SC88; SOT363; TSSOP6 Frequency: 180...230MHz |
на замовлення 423 шт: термін постачання 14-30 дні (днів) |
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PUMD12-QX | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 80 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PUMD9-QX | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD3-QF | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD12-QF | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 80 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD24,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 20mA Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 20mA Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Base-emitter resistor: 100kΩ Frequency: 180...230MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD3-QZ | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD10,125 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD9-QF | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD10-QF | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||
| PUMD10-QX | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| PUMD13-QX | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| PUMD15-QX | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||
|
|
PUMD17,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 180...230MHz Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD18,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 180...230MHz Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PUMD2-QH | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||
|
|
PUMD3-QH | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD3,125 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD6,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 180...230MHz Base resistor: 4.7kΩ |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||
|
|
PUMD6,135 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| BCV62A,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT143B
Mounting: SMD
Frequency: 100MHz
Kind of package: reel; tape
Semiconductor structure: common base
Current gain: 100...250
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT143B
Mounting: SMD
Frequency: 100MHz
Kind of package: reel; tape
Semiconductor structure: common base
Current gain: 100...250
на замовлення 820 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 17.32 грн |
| 32+ | 13.54 грн |
| 100+ | 10.75 грн |
| BAS40-07,215 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143B; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Case: SOT143B
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 10µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143B; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Case: SOT143B
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 10µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BAT74,215 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143B; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Semiconductor structure: double independent
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 30V
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143B; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Semiconductor structure: double independent
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 30V
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PRTR5V0U2AX,215 |
|
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PESD2ETH-AXR |
|
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; Ethernet
Version: ESD
Capacitance: 1.8pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; Ethernet
Version: ESD
Capacitance: 1.8pF
товару немає в наявності
В кошику
од. на суму грн.
| PRTR5V0U2X,215 |
|
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: universal
товару немає в наявності
В кошику
од. на суму грн.
| BAW101,215 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 600V; 250mA; 50ns; SOT143B; Ufmax: 1.1V; 0.35W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: fast switching
Case: SOT143B
Max. forward voltage: 1.1V
Max. forward impulse current: 4.5A
Kind of package: reel; tape
Power dissipation: 0.35W
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 600V; 250mA; 50ns; SOT143B; Ufmax: 1.1V; 0.35W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: fast switching
Case: SOT143B
Max. forward voltage: 1.1V
Max. forward impulse current: 4.5A
Kind of package: reel; tape
Power dissipation: 0.35W
Leakage current: 50µA
товару немає в наявності
В кошику
од. на суму грн.
| BCV62C,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT143B
Mounting: SMD
Frequency: 100MHz
Kind of package: reel; tape
Semiconductor structure: common base
Current gain: 420...800
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT143B
Mounting: SMD
Frequency: 100MHz
Kind of package: reel; tape
Semiconductor structure: common base
Current gain: 420...800
товару немає в наявності
В кошику
од. на суму грн.
| BCV61B,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Mounting: SMD
Case: SOT143B
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Type of transistor: NPN x2
Semiconductor structure: common base
Collector-emitter voltage: 30V
Current gain: 200...450
Polarisation: bipolar
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Mounting: SMD
Case: SOT143B
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Type of transistor: NPN x2
Semiconductor structure: common base
Collector-emitter voltage: 30V
Current gain: 200...450
Polarisation: bipolar
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| BCV61C,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Mounting: SMD
Case: SOT143B
Kind of package: reel; tape
Collector current: 0.1A
Pulsed collector current: 0.2A
Power dissipation: 0.25W
Type of transistor: NPN x2
Semiconductor structure: common base
Collector-emitter voltage: 30V
Current gain: 420...800
Polarisation: bipolar
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Mounting: SMD
Case: SOT143B
Kind of package: reel; tape
Collector current: 0.1A
Pulsed collector current: 0.2A
Power dissipation: 0.25W
Type of transistor: NPN x2
Semiconductor structure: common base
Collector-emitter voltage: 30V
Current gain: 420...800
Polarisation: bipolar
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| BCV65,215 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 30V; 0.1A; 250mW; SOT143B
Semiconductor structure: common base; common emitter
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 75...800
Polarisation: bipolar
Type of transistor: NPN / PNP
Kind of package: reel; tape
Collector current: 0.1A
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 30V; 0.1A; 250mW; SOT143B
Semiconductor structure: common base; common emitter
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 75...800
Polarisation: bipolar
Type of transistor: NPN / PNP
Kind of package: reel; tape
Collector current: 0.1A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74LVC139BQ,115 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Operating temperature: -40...125°C
Family: LVC
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Number of channels: 2
Number of inputs: 3
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Technology: CMOS; TTL
Case: DHVQFN16
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Operating temperature: -40...125°C
Family: LVC
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Number of channels: 2
Number of inputs: 3
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Technology: CMOS; TTL
Case: DHVQFN16
Type of integrated circuit: digital
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В кошику
од. на суму грн.
| PMEG6010CEH,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
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В кошику
од. на суму грн.
| PMEG6010CEH.115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
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Мінімальне замовлення: 5 шт
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| 74HC4002D,653 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: HC
Kind of package: reel; tape
Delay time: 150ns
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: HC
Kind of package: reel; tape
Delay time: 150ns
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 1830 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 56.52 грн |
| 10+ | 46.56 грн |
| 11+ | 42.16 грн |
| 25+ | 37.16 грн |
| 100+ | 32.25 грн |
| 74HC4002DB,112 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 40.11 грн |
| 14+ | 32.00 грн |
| 25+ | 27.60 грн |
| 74HC4002PW,112 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| 74HC4002PW,118 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: HC
Kind of package: reel; tape
Delay time: 150ns
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: HC
Kind of package: reel; tape
Delay time: 150ns
Supply voltage: 2...6V DC
Technology: CMOS
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Мінімальне замовлення: 2500 шт
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| MJD2873-QJ |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 40...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 65MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 40...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 65MHz
Application: automotive industry
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| PSMN1R2-25YL,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN0R7-25YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 235A
Power dissipation: 158W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.47mΩ
Mounting: SMD
Gate charge: 110.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 235A
Power dissipation: 158W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.47mΩ
Mounting: SMD
Gate charge: 110.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R3-30YL,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| PSMN4R2-80YSEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 698A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 698A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN4R8-100YSEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R0-40YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; Idm: 1284A; 198W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1284A
Power dissipation: 198W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.93mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; Idm: 1284A; 198W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1284A
Power dissipation: 198W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.93mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMN1R2-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 209A
Pulsed drain current: 1181A
Power dissipation: 194W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 209A
Pulsed drain current: 1181A
Power dissipation: 194W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMN3R0-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 90A; Idm: 512A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 512A
Power dissipation: 91W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 46.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 90A; Idm: 512A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 512A
Power dissipation: 91W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 46.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMN7R5-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMN2R4-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMNR67-30YLEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 361A; Idm: 2.07kA; 333W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 361A
Pulsed drain current: 2.07kA
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 361A; Idm: 2.07kA; 333W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 361A
Pulsed drain current: 2.07kA
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| PSMNR58-30YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 347A; Idm: 1960A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 347A
Pulsed drain current: 1960A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 347A; Idm: 1960A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 347A
Pulsed drain current: 1960A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BUK7J1R4-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PSMN1R0-40YSHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 277A; Idm: 1564A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 277A
Pulsed drain current: 1564A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 277A; Idm: 1564A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 277A
Pulsed drain current: 1564A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMNR51-25YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 380A
Pulsed drain current: 2174A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 380A
Pulsed drain current: 2174A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMNR90-40YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 285A
Pulsed drain current: 1613A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 285A
Pulsed drain current: 1613A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| PUMD16,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
на замовлення 1877 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 30+ | 15.50 грн |
| 49+ | 8.72 грн |
| 83+ | 5.15 грн |
| 100+ | 4.39 грн |
| 250+ | 3.28 грн |
| 500+ | 2.98 грн |
| 1000+ | 2.76 грн |
| PUMD20,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 180...230MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 180...230MHz
на замовлення 673 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 32+ | 14.59 грн |
| 55+ | 7.79 грн |
| 82+ | 5.21 грн |
| 114+ | 3.72 грн |
| 250+ | 3.35 грн |
| 500+ | 3.13 грн |
| PUMD4-QX |
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
на замовлення 2550 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 88+ | 4.83 грн |
| 105+ | 4.06 грн |
| PUMD48-QX |
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 80...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47/2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 80...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47/2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 2850 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 105+ | 4.06 грн |
| 118+ | 3.59 грн |
| 127+ | 3.34 грн |
| 250+ | 3.19 грн |
| 500+ | 2.86 грн |
| 1000+ | 2.82 грн |
| PUMD14,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 47kΩ
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 91.16 грн |
| PUMD30,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180...230MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180...230MHz
на замовлення 423 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 32+ | 14.59 грн |
| 54+ | 7.96 грн |
| 80+ | 5.32 грн |
| 114+ | 3.72 грн |
| 250+ | 3.35 грн |
| PUMD12-QX |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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В кошику
од. на суму грн.
| PUMD9-QX |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
| PUMD3-QF |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| PUMD12-QF |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| PUMD24,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 20mA
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 20mA
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Frequency: 180...230MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 20mA
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 20mA
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Frequency: 180...230MHz
товару немає в наявності
В кошику
од. на суму грн.
| PUMD3-QZ |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| PUMD10,125 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
| PUMD9-QF |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| PUMD10-QF |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| PUMD10-QX |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PUMD13-QX |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PUMD15-QX |
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| PUMD17,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PUMD18,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| PUMD2-QH |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| PUMD3-QH |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| PUMD3,125 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| PUMD6,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 4.7kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 180...230MHz
Base resistor: 4.7kΩ
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| PUMD6,135 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
товару немає в наявності
В кошику
од. на суму грн.