Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BC214L_D26Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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BC214L_L34Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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BC214LB | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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BC214LB_L34Z | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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BC237A | onsemi |
Description: TRANS NPN 45V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
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BC237B_S00Z | onsemi |
Description: TRANS NPN 50V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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BC308A | onsemi |
Description: TRANS PNP 25V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW |
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BC318C | onsemi |
Description: TRANS PNP 20V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 30nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
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BC32825 | onsemi |
Description: TRANS PNP 25V 0.8A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
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BC338 | onsemi |
Description: TRANS NPN 25V 0.8A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
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BC368_D26Z | onsemi |
Description: TRANS NPN 20V 2A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 45MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
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BC368_D27Z | onsemi |
Description: TRANS NPN 20V 2A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 45MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
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BC368_L34Z | onsemi |
Description: TRANS NPN 20V 2A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 45MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
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BC369_D74Z | onsemi |
Description: TRANS PNP 20V 1.5A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 45MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
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BC546A_D81Z | onsemi |
Description: TRANS NPN 65V 0.1A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
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BC556_J18Z | onsemi |
Description: TRANS PNP 65V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
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BC556B_J18Z | onsemi |
Description: TRANS PNP 65V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
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BC557B_D11Z | onsemi |
Description: TRANS PNP 45V 0.1A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
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BC635_D26Z | onsemi |
Description: TRANS NPN 45V 1A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
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BC635_D27Z | onsemi |
Description: TRANS NPN 45V 1A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
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BC637_D26Z | onsemi |
Description: TRANS NPN 60V 1A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
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BC637_D27Z | onsemi |
Description: TRANS NPN 60V 1A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
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BC637_D75Z | onsemi |
Description: TRANS NPN 60V 1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
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BC637_L34Z | onsemi |
Description: TRANS NPN 60V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
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BC640_J61Z | onsemi |
Description: TRANS PNP 80V 1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
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BCW30 | onsemi |
Description: TRANS PNP 32V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW |
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BCW60A | onsemi |
Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW |
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BCW60B | onsemi |
Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW |
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BCW60D | onsemi |
Description: TRANS NPN 32V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW |
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BCW71 | onsemi |
Description: TRANS NPN 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 330MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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BCW71_ND87Z | onsemi |
Description: TRANS NPN 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 330MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BCW89 | onsemi |
Description: TRANS PNP 60V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
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BCX20 | onsemi |
Description: TRANS NPN 25V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 310 mW |
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BCX70G | onsemi |
Description: TRANS NPN 45V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BCX70H | onsemi |
Description: TRANS NPN 45V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BCX70K | onsemi |
Description: TRANS NPN 45V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BCX71J_D87Z | onsemi |
Description: TRANS PNP 45V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BCX71K_D87Z | onsemi |
Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BCX71K_S00Z | onsemi |
Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BF494 | onsemi |
Description: RF TRANS NPN 20V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Supplier Device Package: TO-92-3 Part Status: Obsolete |
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BF494_D27Z | onsemi |
Description: RF TRANS NPN 20V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Supplier Device Package: TO-92-3 Part Status: Obsolete |
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BF494_D74Z | onsemi |
Description: RF TRANS NPN 20V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Supplier Device Package: TO-92-3 Part Status: Obsolete |
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CD4538BCWMX | onsemi |
Description: IC MULTIVIBRATOR 100NS 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -55°C ~ 125°C Propagation Delay: 100 ns Independent Circuits: 2 Current - Output High, Low: 8.8mA, 8.8mA Schmitt Trigger Input: No Supplier Device Package: 16-SOIC Part Status: Obsolete Voltage - Supply: 3 V ~ 15 V |
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FAN1086M25X | onsemi |
Description: IC REG LINEAR 2.5V 1.5A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: 25°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 7.5V Number of Regulators: 1 Supplier Device Package: TO-263-3 Voltage - Output (Min/Fixed): 2.5V PSRR: 72dB (120Hz) Voltage Dropout (Max): 1.5V @ 1.5A Protection Features: Over Current, Over Temperature |
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FAN5331SX_Q | onsemi |
Description: IC LED DRIVER RGLTR 1A SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.65MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 1A (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: SOT-23-5 Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
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FAN7532M | onsemi | Description: IC BALLAST CNTRL 52KHZ 16SOP |
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FCBS0650 | onsemi |
Description: IC SMART POWER MOD SPM27-BA Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 6 A Voltage: 500 V |
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FDB035AN06A0 | onsemi |
Description: MOSFET N-CH 60V 22A/80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FDB13AN06A0 | onsemi |
Description: MOSFET N-CH 60V 10.9A/62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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FDD120AN15A0 | onsemi |
Description: MOSFET N-CH 150V 2.8A/14A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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FDD13AN06A0 | onsemi |
Description: MOSFET N-CH 60V 9.9A/50A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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FDD3672 | onsemi |
Description: MOSFET N-CH 100V 6.5/44A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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FDH3632 | onsemi |
Description: MOSFET N-CH 100V 12A/80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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FDH400 | onsemi |
Description: DIODE GEN PURP 150V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
на замовлення 19976 шт: термін постачання 21-31 дні (днів) |
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FDH400TR | onsemi |
Description: DIODE GEN PURP 150V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
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FDS3692 | onsemi |
Description: MOSFET N-CH 100V 4.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FDS3992 | onsemi |
Description: MOSFET 2N-CH 100V 4.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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1N4148_NT50A | onsemi |
Description: DIODE GEN PURP 100V 200MA DO35 Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
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1N4148-T26A | onsemi |
Description: DIODE GEN PURP 100V 200MA DO35 Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 240000 шт: термін постачання 21-31 дні (днів) |
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1N4148_T26R | onsemi |
Description: DIODE GEN PURP 100V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
товар відсутній |
BC214L_D26Z |
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній
BC214L_L34Z |
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній
BC214LB |
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній
BC214LB_L34Z |
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній
BC237A |
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товар відсутній
BC237B_S00Z |
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
BC308A |
Виробник: onsemi
Description: TRANS PNP 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Description: TRANS PNP 25V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
товар відсутній
BC318C |
Виробник: onsemi
Description: TRANS PNP 20V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS PNP 20V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товар відсутній
BC32825 |
Виробник: onsemi
Description: TRANS PNP 25V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS PNP 25V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товар відсутній
BC338 |
Виробник: onsemi
Description: TRANS NPN 25V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS NPN 25V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товар відсутній
BC368_D26Z |
Виробник: onsemi
Description: TRANS NPN 20V 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS NPN 20V 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товар відсутній
BC368_D27Z |
Виробник: onsemi
Description: TRANS NPN 20V 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS NPN 20V 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товар відсутній
BC368_L34Z |
Виробник: onsemi
Description: TRANS NPN 20V 2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS NPN 20V 2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товар відсутній
BC369_D74Z |
Виробник: onsemi
Description: TRANS PNP 20V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS PNP 20V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товар відсутній
BC546A_D81Z |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC556_J18Z |
Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC556B_J18Z |
Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC557B_D11Z |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS PNP 45V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товар відсутній
BC635_D26Z |
Виробник: onsemi
Description: TRANS NPN 45V 1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: TRANS NPN 45V 1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
товар відсутній
BC635_D27Z |
Виробник: onsemi
Description: TRANS NPN 45V 1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: TRANS NPN 45V 1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
товар відсутній
BC637_D26Z |
Виробник: onsemi
Description: TRANS NPN 60V 1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
BC637_D27Z |
Виробник: onsemi
Description: TRANS NPN 60V 1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
BC637_D75Z |
Виробник: onsemi
Description: TRANS NPN 60V 1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
BC637_L34Z |
Виробник: onsemi
Description: TRANS NPN 60V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
BC640_J61Z |
Виробник: onsemi
Description: TRANS PNP 80V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
BCW30 |
Виробник: onsemi
Description: TRANS PNP 32V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
Description: TRANS PNP 32V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
товар відсутній
BCW60A |
Виробник: onsemi
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
товар відсутній
BCW60B |
Виробник: onsemi
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
товар відсутній
BCW60D |
Виробник: onsemi
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
товар відсутній
BCW71 |
Виробник: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.84 грн |
6000+ | 4.46 грн |
9000+ | 3.86 грн |
30000+ | 3.55 грн |
BCW71_ND87Z |
Виробник: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BCW89 |
Виробник: onsemi
Description: TRANS PNP 60V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Description: TRANS PNP 60V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
товар відсутній
BCX20 |
Виробник: onsemi
Description: TRANS NPN 25V 0.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 310 mW
Description: TRANS NPN 25V 0.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 310 mW
товар відсутній
BCX70G |
Виробник: onsemi
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BCX70H |
Виробник: onsemi
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BCX70K |
Виробник: onsemi
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BCX71J_D87Z |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BCX71K_D87Z |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BCX71K_S00Z |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BF494 |
Виробник: onsemi
Description: RF TRANS NPN 20V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Description: RF TRANS NPN 20V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
товар відсутній
BF494_D27Z |
Виробник: onsemi
Description: RF TRANS NPN 20V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Description: RF TRANS NPN 20V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
товар відсутній
BF494_D74Z |
Виробник: onsemi
Description: RF TRANS NPN 20V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Description: RF TRANS NPN 20V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
товар відсутній
CD4538BCWMX |
Виробник: onsemi
Description: IC MULTIVIBRATOR 100NS 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 100 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: No
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Voltage - Supply: 3 V ~ 15 V
Description: IC MULTIVIBRATOR 100NS 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 100 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: No
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Voltage - Supply: 3 V ~ 15 V
товар відсутній
FAN1086M25X |
Виробник: onsemi
Description: IC REG LINEAR 2.5V 1.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 25°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7.5V
Number of Regulators: 1
Supplier Device Package: TO-263-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.5V 1.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 25°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7.5V
Number of Regulators: 1
Supplier Device Package: TO-263-3
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
товар відсутній
FAN5331SX_Q |
Виробник: onsemi
Description: IC LED DRIVER RGLTR 1A SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.65MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 1A (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRIVER RGLTR 1A SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.65MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 1A (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SOT-23-5
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
FCBS0650 |
Виробник: onsemi
Description: IC SMART POWER MOD SPM27-BA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 6 A
Voltage: 500 V
Description: IC SMART POWER MOD SPM27-BA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 6 A
Voltage: 500 V
товар відсутній
FDB035AN06A0 |
Виробник: onsemi
Description: MOSFET N-CH 60V 22A/80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Description: MOSFET N-CH 60V 22A/80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 217.32 грн |
FDB13AN06A0 |
Виробник: onsemi
Description: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)FDD120AN15A0 |
Виробник: onsemi
Description: MOSFET N-CH 150V 2.8A/14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Description: MOSFET N-CH 150V 2.8A/14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 23.4 грн |
5000+ | 21.46 грн |
12500+ | 20.47 грн |
FDD13AN06A0 |
Виробник: onsemi
Description: MOSFET N-CH 60V 9.9A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 60V 9.9A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 51.7 грн |
5000+ | 47.92 грн |
FDD3672 |
Виробник: onsemi
Description: MOSFET N-CH 100V 6.5/44A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Description: MOSFET N-CH 100V 6.5/44A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 48.32 грн |
5000+ | 44.78 грн |
12500+ | 43.29 грн |
FDH3632 |
Виробник: onsemi
Description: MOSFET N-CH 100V 12A/80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Description: MOSFET N-CH 100V 12A/80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
на замовлення 445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 314.66 грн |
10+ | 254.36 грн |
100+ | 205.81 грн |
FDH400 |
Виробник: onsemi
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 19976 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.69 грн |
20+ | 13.74 грн |
100+ | 6.71 грн |
500+ | 5.25 грн |
1000+ | 3.65 грн |
2000+ | 3.16 грн |
5000+ | 2.88 грн |
10000+ | 2.39 грн |
FDH400TR |
Виробник: onsemi
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
товар відсутній
FDS3692 |
Виробник: onsemi
Description: MOSFET N-CH 100V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 25 V
Description: MOSFET N-CH 100V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 31.79 грн |
FDS3992 |
Виробник: onsemi
Description: MOSFET 2N-CH 100V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 42.51 грн |
1N4148_NT50A |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
1N4148-T26A |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 0.69 грн |
10000+ | 0.56 грн |
25000+ | 0.52 грн |
50000+ | 0.42 грн |
125000+ | 0.35 грн |
1N4148_T26R |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній