| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NC7SZ10L6X | onsemi |
Description: IC GATE NAND 1CH 3-INP 6MICROPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NC7SZ386P6X | onsemi |
Description: IC GATE XOR 1CH 3-INP SC88Current - Quiescent (Max): 2 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF Supplier Device Package: SC-88 (SC-70-6) Number of Inputs: 3 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 193979 шт: термін постачання 21-31 дні (днів) |
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NC7WP125L8X | onsemi |
Description: IC BUF NON-INVERT 3.6V 8MICROPAKSupplier Device Package: 8-MicroPak™ Current - Output High, Low: 2.6mA, 2.6mA Number of Bits per Element: 1 Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-UFQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NC7WP32L8X | onsemi |
Description: IC GATE OR 2CH 2-INP 8MICROPAKSupplier Device Package: 8-MicroPak™ Number of Inputs: 2 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: 8-UFQFN Packaging: Cut Tape (CT) Current - Quiescent (Max): 900 nA Number of Circuits: 2 Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF Input Logic Level - Low: 0.7V ~ 0.9V Input Logic Level - High: 1.6V ~ 2.1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NC7WV14L6X | onsemi |
Description: IC INVERTER 2CH 2-INP 6MICROPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NC7WZ02L8X | onsemi |
Description: IC GATE NOR 2CH 2-INP 8MICROPAKCurrent - Quiescent (Max): 1 µA Number of Circuits: 2 Max Propagation Delay @ V, Max CL: 3.7ns @ 5V, 50pF Supplier Device Package: 8-MicroPak™ Number of Inputs: 2 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: NOR Gate Mounting Type: Surface Mount Package / Case: 8-UFQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NC7WZ241L8X | onsemi |
Description: IC BUFF 1.65V 8-MICROPAKPackaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 8-MicroPak™ Part Status: Obsolete |
на замовлення 1297 шт: термін постачання 21-31 дні (днів) |
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PZTA29 | onsemi |
Description: TRANS NPN DARL 100V 0.8A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 7878 шт: термін постачання 21-31 дні (днів) |
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QED123A4R0 | onsemi |
Description: EMITTER IR 880NM 100MA RADIALPackaging: Cut Tape (CT) Package / Case: Radial, 5mm Dia (T 1 3/4) Wavelength: 890nm Mounting Type: Through Hole Type: Infrared (IR) Orientation: Top View Operating Temperature: -40°C ~ 100°C (TA) Voltage - Forward (Vf) (Typ): 1.7V (Max) Viewing Angle: 16° Current - DC Forward (If) (Max): 100mA Radiant Intensity (Ie) Min @ If: 50mW/sr @ 100mA |
на замовлення 9874 шт: термін постачання 21-31 дні (днів) |
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RGF1K | onsemi |
Description: DIODE STANDARD 800V 1A DO214ACCurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 7183 шт: термін постачання 21-31 дні (днів) |
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H11AA4SR2VM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.17V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 46665 шт: термін постачання 21-31 дні (днів) |
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STK544UC62K-E | onsemi |
Description: IC HALF BRIDGE DRIVER 10A 23SIPFault Protection: Shoot-Through, UVLO Supplier Device Package: 23-SIP-1 Voltage - Load: 450V (Max) Technology: IGBT Current - Peak Output: 20A Current - Output / Channel: 10A Applications: AC Motors Voltage - Supply: 12.5V ~ 17.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 23-SIP, 19 Leads, Formed Leads Features: Bootstrap Circuit Packaging: Tube Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STK551U362A-E | onsemi |
Description: IC HALF BRIDGE DRIVER 10A 29SIPLoad Type: Inductive Fault Protection: Current Limiting, Shoot-Through, UVLO Supplier Device Package: 29-SIP Voltage - Load: 450V (Max) Technology: IGBT Current - Peak Output: 20A Current - Output / Channel: 10A Applications: AC Motors Voltage - Supply: 12.5V ~ 17.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 29-SSIP Module, 21 Leads, Formed Leads Features: Bootstrap Circuit, Status Flag Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STK551U392A-E | onsemi |
Description: IC HALF BRIDGE DRIVER 15A 29SIPLoad Type: Inductive Fault Protection: Current Limiting, Shoot-Through, UVLO Supplier Device Package: 29-SIP Voltage - Load: 450V (Max) Technology: IGBT Current - Peak Output: 30A Current - Output / Channel: 15A Applications: AC Motors Voltage - Supply: 12.5V ~ 17.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 29-SSIP Module, 21 Leads, Formed Leads Features: Bootstrap Circuit, Latch Function, Status Flag Packaging: Bulk |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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STK554U362A-E | onsemi |
Description: IC HALF BRIDGE DRIVER 10A 29SIPLoad Type: Inductive Fault Protection: Current Limiting, Shoot-Through, UVLO Supplier Device Package: 29-SIP Voltage - Load: 450V (Max) Technology: IGBT Current - Peak Output: 20A Current - Output / Channel: 10A Applications: AC Motors Voltage - Supply: 12.5V ~ 17.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 29-SSIP Module, 21 Leads, Formed Leads Features: Bootstrap Circuit, Status Flag Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STK554U362C-E | onsemi |
Description: IC HALF BRIDGE DRIVER 10A 29SIPPackaging: Bulk Load Type: Inductive Fault Protection: Current Limiting, Shoot-Through, UVLO Supplier Device Package: 29-SIP Voltage - Load: 450V (Max) Technology: IGBT Current - Peak Output: 20A Current - Output / Channel: 10A Applications: AC Motors Voltage - Supply: 12.5V ~ 17.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 29-SSIP Module, 21 Leads, Formed Leads Features: Bootstrap Circuit, Status Flag |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCMT199N60 | onsemi |
Description: MOSFET N-CH 600V 20.2A POWER88Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: Power88 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDBL86210-F085 | onsemi |
Description: MOSFET N-CH 150V 169A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 169A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V Power Dissipation (Max): 500W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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FDMC86259P | onsemi |
Description: MOSFET P-CH 150V 3.2A/13A PWR33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V Power Dissipation (Max): 2.3W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V |
на замовлення 16550 шт: термін постачання 21-31 дні (днів) |
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FDMD84100 | onsemi |
Description: MOSFET 2N-CH 100V 7A 8-PQFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FDMS86263P | onsemi |
Description: MOSFET P-CH 150V 4.4A/22A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V |
на замовлення 1100 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1100 шт В кошику од. на суму грн. | ||||||||||||||
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FL7733MX | onsemi |
Description: IC LED DRIVER OFFL 8SOICVoltage - Supply (Max): 30V Supplier Device Package: 8-SOIC Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost) Internal Switch(s): No Operating Temperature: -40°C ~ 125°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 1.5V ~ 5V Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCMT199N60 | onsemi |
Description: MOSFET N-CH 600V 20.2A POWER88Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: Power88 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V |
на замовлення 6322 шт: термін постачання 21-31 дні (днів) |
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FDBL86210-F085 | onsemi |
Description: MOSFET N-CH 150V 169A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 169A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V Power Dissipation (Max): 500W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V Qualification: AEC-Q101 |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
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FDMC86259P | onsemi |
Description: MOSFET P-CH 150V 3.2A/13A PWR33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V Power Dissipation (Max): 2.3W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V |
на замовлення 16628 шт: термін постачання 21-31 дні (днів) |
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FDMD84100 | onsemi |
Description: MOSFET 2N-CH 100V 7A 8-PQFN |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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FDMS86263P | onsemi |
Description: MOSFET P-CH 150V 4.4A/22A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V |
на замовлення 1223 шт: термін постачання 21-31 дні (днів) |
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FL7733MX | onsemi |
Description: IC LED DRIVER OFFL 8SOICNumber of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 1.5V ~ 5V Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Voltage - Supply (Max): 30V Supplier Device Package: 8-SOIC Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost) Internal Switch(s): No Operating Temperature: -40°C ~ 125°C (TJ) Type: AC DC Offline Switcher |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDB024N08BL7 | onsemi |
Description: MOSFET N-CH 80V 120A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 246W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
на замовлення 3900 шт: термін постачання 21-31 дні (днів) |
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FDB20N50F | onsemi |
Description: MOSFET N-CH 500V 20A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
на замовлення 12800 шт: термін постачання 21-31 дні (днів) |
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FDMC4435BZ-F126 | onsemi |
Description: MOSFET P-CH 30V 8.5A/18A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Power Dissipation (Max): 2.3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMC7692S-F126 | onsemi |
Description: MOSFET N-CH 30V 12.5A/18A 8MLP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMC8878_F126 | onsemi |
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLPInput Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FDMC8884-F126 | onsemi |
Description: MOSFET N-CH 30V 9A/15A 8MLPDrain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FODM3022R4_NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 10mA Static dV/dt (Min): 10V/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FQB5N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 4.5A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQB8N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 7.5A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQD2N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 1.9A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FQD4P40TM-AM002 | onsemi |
Description: MOSFET P-CH 400V 2.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQD5N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 2.8A DPAKInput Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FDZ1416NZ | onsemi |
Description: MOSFET 2N-CH 4WLCSPPart Status: Obsolete Supplier Device Package: 4-WLCSP (1.6x1.4) Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NC7SB3157P6X-F080 | onsemi |
Description: IC SWITCH SPDT X 1 15OHM SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: SC-88 (SC-70-6) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NC7SB3157P6X-F40 | onsemi |
Description: IC SWITCH SPDT X 1 15OHM SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: SC-88 (SC-70-6) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FQA16N50-F109 | onsemi |
Description: MOSFET N-CH 500V 16A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||
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FQU5N50CTU-WS | onsemi |
Description: MOSFET N-CH 500V 4A IPAKInput Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 5040 шт В кошику од. на суму грн. | ||||||||||||||
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FDB024N08BL7 | onsemi |
Description: MOSFET N-CH 80V 120A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 246W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
на замовлення 5116 шт: термін постачання 21-31 дні (днів) |
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FDB20N50F | onsemi |
Description: MOSFET N-CH 500V 20A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
на замовлення 13008 шт: термін постачання 21-31 дні (днів) |
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FDMC7692S-F126 | onsemi |
Description: MOSFET N-CH 30V 12.5A/18A 8MLP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FODM3022R4_NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 10mA Static dV/dt (Min): 10V/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQB5N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 4.5A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 760 шт: термін постачання 21-31 дні (днів) |
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FDZ1416NZ | onsemi |
Description: MOSFET 2N-CH 4WLCSPPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-WLCSP (1.6x1.4) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD8004MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8VC 10UDFNPackaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8V (Typ) Power Line Protection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ESD8040MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 12VC 18UDFNPackaging: Tape & Reel (TR) Package / Case: 18-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 18-UDFN (5.5x1.5) Unidirectional Channels: 14 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 12V (Typ) Power Line Protection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ESD8006MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8.4VC 8UDFNPackaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.32pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 8-UDFN (3.3x1.0) Unidirectional Channels: 6 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8.4V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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ESD8008MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8.1VC 14UDFNPackaging: Tape & Reel (TR) Package / Case: 14-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 14-UDFN (5.5x1.5) Unidirectional Channels: 8 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8.1V (Typ) Power Line Protection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ESD8104MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 11.4VC 10UDFNPackaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 11.4V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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ESD8004MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8VC 10UDFNPackaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 1543 шт: термін постачання 21-31 дні (днів) |
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ESD8040MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 12VC 18UDFNPackaging: Cut Tape (CT) Package / Case: 18-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 18-UDFN (5.5x1.5) Unidirectional Channels: 14 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 12V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 3522 шт: термін постачання 21-31 дні (днів) |
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ESD8006MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8.4VC 8UDFNPackaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.32pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 8-UDFN (3.3x1.0) Unidirectional Channels: 6 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8.4V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 28381 шт: термін постачання 21-31 дні (днів) |
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ESD8008MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 8.1VC 14UDFNPackaging: Cut Tape (CT) Package / Case: 14-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 14-UDFN (5.5x1.5) Unidirectional Channels: 8 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8.1V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 455 шт: термін постачання 21-31 дні (днів) |
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| NC7SZ10L6X |
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Виробник: onsemi
Description: IC GATE NAND 1CH 3-INP 6MICROPAK
Description: IC GATE NAND 1CH 3-INP 6MICROPAK
товару немає в наявності
В кошику
од. на суму грн.
| NC7SZ386P6X |
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Виробник: onsemi
Description: IC GATE XOR 1CH 3-INP SC88
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: IC GATE XOR 1CH 3-INP SC88
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 193979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.14 грн |
| 69+ | 4.43 грн |
| 79+ | 3.88 грн |
| 100+ | 3.07 грн |
| 250+ | 2.78 грн |
| 500+ | 2.61 грн |
| 1000+ | 2.43 грн |
| NC7WP125L8X |
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Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 8MICROPAK
Supplier Device Package: 8-MicroPak™
Current - Output High, Low: 2.6mA, 2.6mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
Description: IC BUF NON-INVERT 3.6V 8MICROPAK
Supplier Device Package: 8-MicroPak™
Current - Output High, Low: 2.6mA, 2.6mA
Number of Bits per Element: 1
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NC7WP32L8X |
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Виробник: onsemi
Description: IC GATE OR 2CH 2-INP 8MICROPAK
Supplier Device Package: 8-MicroPak™
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 900 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2.1V
Description: IC GATE OR 2CH 2-INP 8MICROPAK
Supplier Device Package: 8-MicroPak™
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 900 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2.1V
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| NC7WV14L6X |
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Виробник: onsemi
Description: IC INVERTER 2CH 2-INP 6MICROPAK
Description: IC INVERTER 2CH 2-INP 6MICROPAK
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| NC7WZ02L8X |
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Виробник: onsemi
Description: IC GATE NOR 2CH 2-INP 8MICROPAK
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 3.7ns @ 5V, 50pF
Supplier Device Package: 8-MicroPak™
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
Description: IC GATE NOR 2CH 2-INP 8MICROPAK
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 3.7ns @ 5V, 50pF
Supplier Device Package: 8-MicroPak™
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Packaging: Cut Tape (CT)
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| NC7WZ241L8X |
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Виробник: onsemi
Description: IC BUFF 1.65V 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
Part Status: Obsolete
Description: IC BUFF 1.65V 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
Part Status: Obsolete
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.62 грн |
| 22+ | 14.05 грн |
| 25+ | 12.43 грн |
| 100+ | 10.05 грн |
| 250+ | 9.27 грн |
| 500+ | 8.80 грн |
| 1000+ | 8.28 грн |
| PZTA29 |
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Виробник: onsemi
Description: TRANS NPN DARL 100V 0.8A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN DARL 100V 0.8A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 7878 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.30 грн |
| 10+ | 33.52 грн |
| 100+ | 21.62 грн |
| 500+ | 15.47 грн |
| 1000+ | 13.91 грн |
| 2000+ | 12.60 грн |
| QED123A4R0 |
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Виробник: onsemi
Description: EMITTER IR 880NM 100MA RADIAL
Packaging: Cut Tape (CT)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 890nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Viewing Angle: 16°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 50mW/sr @ 100mA
Description: EMITTER IR 880NM 100MA RADIAL
Packaging: Cut Tape (CT)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 890nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Viewing Angle: 16°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 50mW/sr @ 100mA
на замовлення 9874 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.37 грн |
| 10+ | 32.53 грн |
| 100+ | 23.63 грн |
| 500+ | 18.45 грн |
| RGF1K |
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Виробник: onsemi
Description: DIODE STANDARD 800V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 800V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 7183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.55 грн |
| 14+ | 22.91 грн |
| 100+ | 18.10 грн |
| 500+ | 12.89 грн |
| 1000+ | 10.06 грн |
| 2000+ | 9.90 грн |
| H11AA4SR2VM |
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Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 46665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 49.33 грн |
| 100+ | 36.45 грн |
| 500+ | 28.83 грн |
| STK544UC62K-E |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 23SIP
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: 23-SIP-1
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-SIP, 19 Leads, Formed Leads
Features: Bootstrap Circuit
Packaging: Tube
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 10A 23SIP
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: 23-SIP-1
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-SIP, 19 Leads, Formed Leads
Features: Bootstrap Circuit
Packaging: Tube
Load Type: Inductive
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| STK551U362A-E |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
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| STK551U392A-E |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 15A 29SIP
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 30A
Current - Output / Channel: 15A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Bulk
Description: IC HALF BRIDGE DRIVER 15A 29SIP
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 30A
Current - Output / Channel: 15A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Bulk
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1617.57 грн |
| 10+ | 1431.83 грн |
| STK554U362A-E |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
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| STK554U362C-E |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Status Flag
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Load Type: Inductive
Fault Protection: Current Limiting, Shoot-Through, UVLO
Supplier Device Package: 29-SIP
Voltage - Load: 450V (Max)
Technology: IGBT
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Features: Bootstrap Circuit, Status Flag
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| FCMT199N60 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 195.22 грн |
| FDBL86210-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
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Мінімальне замовлення: 2000 шт
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| FDMC86259P |
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Виробник: onsemi
Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 16550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 95.08 грн |
| FDMD84100 |
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Виробник: onsemi
Description: MOSFET 2N-CH 100V 7A 8-PQFN
Description: MOSFET 2N-CH 100V 7A 8-PQFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FDMS86263P |
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Виробник: onsemi
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
| FL7733MX |
![]() |
Виробник: onsemi
Description: IC LED DRIVER OFFL 8SOIC
Voltage - Supply (Max): 30V
Supplier Device Package: 8-SOIC
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 1.5V ~ 5V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER OFFL 8SOIC
Voltage - Supply (Max): 30V
Supplier Device Package: 8-SOIC
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 1.5V ~ 5V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| FCMT199N60 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 6322 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 519.37 грн |
| 10+ | 336.50 грн |
| 50+ | 266.48 грн |
| 100+ | 228.94 грн |
| 500+ | 203.71 грн |
| FDBL86210-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 482.89 грн |
| 10+ | 313.21 грн |
| 100+ | 227.25 грн |
| FDMC86259P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 16628 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 299.73 грн |
| 10+ | 189.59 грн |
| 100+ | 133.31 грн |
| 500+ | 105.17 грн |
| FDMD84100 |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7A 8-PQFN
Description: MOSFET 2N-CH 100V 7A 8-PQFN
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| FDMS86263P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
на замовлення 1223 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 294.97 грн |
| 10+ | 186.61 грн |
| 100+ | 131.26 грн |
| 500+ | 103.62 грн |
| FL7733MX |
![]() |
Виробник: onsemi
Description: IC LED DRIVER OFFL 8SOIC
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 1.5V ~ 5V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 30V
Supplier Device Package: 8-SOIC
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Description: IC LED DRIVER OFFL 8SOIC
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 1.5V ~ 5V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 30V
Supplier Device Package: 8-SOIC
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
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| FDB024N08BL7 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 246W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 120A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 246W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
на замовлення 3900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 148.59 грн |
| FDB20N50F |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 115.80 грн |
| FDMC4435BZ-F126 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
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| FDMC7692S-F126 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 12.5A/18A 8MLP
Description: MOSFET N-CH 30V 12.5A/18A 8MLP
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| FDMC8878_F126 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FDMC8884-F126 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/15A 8MLP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Description: MOSFET N-CH 30V 9A/15A 8MLP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
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| FODM3022R4_NF098 |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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| FQB5N60CTM-WS |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FQB8N60CTM-WS |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
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| FQD2N60CTM-WS |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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| FQD4P40TM-AM002 |
Виробник: onsemi
Description: MOSFET P-CH 400V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 400V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FQD5N60CTM-WS |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 2.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| FDZ1416NZ |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 4WLCSP
Part Status: Obsolete
Supplier Device Package: 4-WLCSP (1.6x1.4)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 4WLCSP
Part Status: Obsolete
Supplier Device Package: 4-WLCSP (1.6x1.4)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
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| NC7SB3157P6X-F080 |
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Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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| NC7SB3157P6X-F40 |
![]() |
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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| FQA16N50-F109 |
Виробник: onsemi
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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Мінімальне замовлення: 450 шт
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| FQU5N50CTU-WS |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 500V 4A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 500V 4A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Мінімальне замовлення: 5040 шт
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| FDB024N08BL7 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 246W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 120A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 246W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 5116 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 417.87 грн |
| 10+ | 268.32 грн |
| 100+ | 192.55 грн |
| FDB20N50F |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 13008 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 344.92 грн |
| 10+ | 219.68 грн |
| 50+ | 171.56 грн |
| 100+ | 146.45 грн |
| FDMC7692S-F126 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 12.5A/18A 8MLP
Description: MOSFET N-CH 30V 12.5A/18A 8MLP
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| FODM3022R4_NF098 |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FQB5N60CTM-WS |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.66 грн |
| 10+ | 93.08 грн |
| 100+ | 63.35 грн |
| FDZ1416NZ |
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Виробник: onsemi
Description: MOSFET 2N-CH 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
Description: MOSFET 2N-CH 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| ESD8004MUTAG |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ESD8040MUTAG |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Tape & Reel (TR)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Tape & Reel (TR)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ESD8006MUTAG |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.4VC 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8.4VC 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 28.91 грн |
| 6000+ | 25.86 грн |
| ESD8008MUTAG |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Tape & Reel (TR)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Tape & Reel (TR)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ESD8104MUTAG |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.88 грн |
| 6000+ | 14.06 грн |
| ESD8004MUTAG |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 1543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.57 грн |
| 10+ | 45.28 грн |
| 100+ | 31.28 грн |
| 500+ | 23.41 грн |
| 1000+ | 21.46 грн |
| ESD8040MUTAG |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 12VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 3522 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.79 грн |
| 10+ | 103.46 грн |
| 100+ | 73.84 грн |
| 500+ | 56.98 грн |
| 1000+ | 52.96 грн |
| ESD8006MUTAG |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.4VC 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8.4VC 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 28381 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.22 грн |
| 10+ | 66.96 грн |
| 50+ | 50.03 грн |
| 100+ | 41.79 грн |
| 500+ | 32.74 грн |
| ESD8008MUTAG |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Cut Tape (CT)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 8.1VC 14UDFN
Packaging: Cut Tape (CT)
Package / Case: 14-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 14-UDFN (5.5x1.5)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8.1V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 455 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.26 грн |
| 10+ | 50.47 грн |
| 100+ | 33.08 грн |




























