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ESD8104MUTAG ESD8104MUTAG onsemi ESD8104-D.PDF Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
5+65.81 грн
10+39.63 грн
50+29.08 грн
100+24.08 грн
500+18.47 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
MG2040MUTAG MG2040MUTAG onsemi mg2040-d.pdf Description: TVS DIODE 5VWM 10VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
NIS5132MN2TXG NIS5132MN2TXG onsemi nis5132-d.pdf Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Part Status: Not For New Designs
на замовлення 8215 шт:
термін постачання 21-31 дні (днів)
5+74.54 грн
10+51.77 грн
25+46.73 грн
100+38.71 грн
250+36.25 грн
500+34.77 грн
1000+33.01 грн
2500+31.74 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
NIS5135MN2TXG NIS5135MN2TXG onsemi nis5135-d.pdf Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
на замовлення 7081 шт:
термін постачання 21-31 дні (днів)
4+88.81 грн
10+76.51 грн
25+72.60 грн
100+52.32 грн
250+46.24 грн
500+43.80 грн
1000+33.51 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
NSBC124EF3T5G NSBC124EF3T5G onsemi dtc124e-d.pdf Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 4290 шт:
термін постачання 21-31 дні (днів)
10+34.10 грн
16+20.31 грн
100+12.85 грн
500+9.03 грн
1000+8.05 грн
2000+7.22 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FEBFHR1200-SPG01A-GEVB FEBFHR1200-SPG01A-GEVB onsemi FEBFHR1200_SPG01A.pdf Description: EVAL BOARD SHUNT REGULATOR
Packaging: Bulk
Type: Power Management
Utilized IC / Part: FHR1200
Supplied Contents: Board(s)
товару немає в наявності
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2N7002WST1G onsemi Description: MOSFET N-CH 60V 0.115A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2SA1418T-TD-E 2SA1418T-TD-E onsemi en1788-d.pdf Description: TRANS PNP 160V 0.7A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SA2125-S-TD-E 2SA2125-S-TD-E onsemi Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
товару немає в наявності
В кошику  од. на суму  грн.
2SA2125-S-TD-H 2SA2125-S-TD-H onsemi Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
товару немає в наявності
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2SA2126-S-TL-E 2SA2126-S-TL-E onsemi en7990-d.pdf Description: TRANS PNP 50V 3A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA2210-1E 2SA2210-1E onsemi 2SA2210-D.PDF Description: TRANS PNP 50V 20A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SA2210-EPN-1EX onsemi Description: TRANS PNP 50V 20A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1203S-H-TL-E 2SB1203S-H-TL-E onsemi Description: TRANS PNP 50V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1203T-H-TL-E onsemi Description: TRANS PNP 50V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB817C-1E 2SB817C-1E onsemi ENA0188-D.PDF Description: TRANS PNP 140V 12A TO-3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 120 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC3332R onsemi Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC3332R-AA 2SC3332R-AA onsemi Description: TRANS NPN 160V 0.7A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC3646S-P-TD-E 2SC3646S-P-TD-E onsemi Description: TRANS NPN 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SC3646T-P-TD-E 2SC3646T-P-TD-E onsemi Description: TRANS NPN 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SC4486S-AN onsemi Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
товару немає в наявності
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2SC4486T-AN 2SC4486T-AN onsemi Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5231C8-TL-E onsemi Description: TRANS NPN 10V 0.07A SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Supplier Device Package: SMCP
товару немає в наявності
В кошику  од. на суму  грн.
2SC5414AE onsemi Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5414AE-AA onsemi Description: TRANS NPN 12V 0.1A 3NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 3-NP
товару немає в наявності
В кошику  од. на суму  грн.
2SC5414AF onsemi Description: TRANS NPN 12V 0.1A 3NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Part Status: Obsolete
Supplier Device Package: 3-NP
товару немає в наявності
В кошику  од. на суму  грн.
2SC5414AF-AA onsemi Description: TRANS NPN 12V 0.1A 3NP
Part Status: Obsolete
Supplier Device Package: 3-NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2SC5415AF-TD-E 2SC5415AF-TD-E onsemi ena1080-d.pdf Description: RF TRANS NPN 12V 6.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5488-TL-E 2SC5488-TL-E onsemi Description: TRANS NPN 10V 0.07A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-623F
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5706-P-E onsemi Description: TRANS NPN 100V 5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SC5706-P-TL-E onsemi Description: TRANS NPN 100V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SC5964-S-TD-E 2SC5964-S-TD-E onsemi Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC5964-S-TD-H 2SC5964-S-TD-H onsemi Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC5964-TD-H 2SC5964-TD-H onsemi 2sa2125-d.pdf Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
1000+17.19 грн
2000+15.04 грн
3000+14.27 грн
5000+12.57 грн
7000+12.09 грн
10000+11.62 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2SC6017-TL-EX onsemi Description: TRANS NPN 50V 10A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
товару немає в наявності
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2SC6082-1E 2SC6082-1E onsemi 2SC6082-D.PDF Description: TRANS NPN 50V 15A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
на замовлення 4813 шт:
термін постачання 21-31 дні (днів)
2+187.13 грн
50+88.70 грн
100+79.82 грн
500+60.29 грн
1000+55.59 грн
2000+51.64 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
2SC6082-EPN-1E 2SC6082-EPN-1E onsemi ena0279jp-d.pdf Description: TRANS NPN 50V 15A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
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2SD1060R-1E 2SD1060R-1E onsemi en686-d.pdf Description: TRANS NPN 50V 5A TO220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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2SD1060R-1EX 2SD1060R-1EX onsemi en686-d.pdf Description: TRANS NPN 50V 5A TO220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
2SD1060S-1E 2SD1060S-1E onsemi en686-d.pdf Description: TRANS NPN 50V 5A TO-220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4892 шт:
термін постачання 21-31 дні (днів)
3+155.41 грн
50+72.37 грн
100+64.85 грн
500+48.46 грн
1000+44.48 грн
2000+41.13 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2SJ652-1E 2SJ652-1E onsemi Description: MOSFET P-CH 60V 28A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK3703-1E 2SK3703-1E onsemi Description: MOSFET N-CH 60V 30A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK3707-1E 2SK3707-1E onsemi Description: MOSFET N-CH 100V 20A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK3738-TL-E 2SK3738-TL-E onsemi EN7671-D.PDF Description: JFET N-CH 40V 1MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 50 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2.3 V @ 1 µA
Power - Max: 100 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SMCP
Current Drain (Id) - Max: 1 mA
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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2SK3745LS-1E 2SK3745LS-1E onsemi 2SK3745LS-D.PDF Description: MOSFET N-CH 1500V 2A TO220F-3FS
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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В кошику  од. на суму  грн.
2SK3746-1E 2SK3746-1E onsemi 2SK3746-D.PDF Description: MOSFET N-CH 1500V 2A TO3P-3L
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P-3L
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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2SK3747-1E 2SK3747-1E onsemi 2SK3747-D.PDF Description: MOSFET N-CH 1500V 2A TO3PF-3
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±35V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF-3
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Packaging: Tube
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2SK3748-1E 2SK3748-1E onsemi 2SK3748-D.PDF Description: MOSFET N-CH 1500V 4A TO3PF-3
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF-3
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Package / Case: SC-94
Packaging: Tube
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2SK3820-DL-1E 2SK3820-DL-1E onsemi 2SK3820-D.PDF Description: MOSFET N-CH 100V 26A TO263-2
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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2SK4066-1E 2SK4066-1E onsemi ONSMS35711-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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2SK4066-DL-1E 2SK4066-DL-1E onsemi ONSMS35711-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO263-2
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
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2SK4087LS-1E 2SK4087LS-1E onsemi Description: MOSFET N-CH 600V 9.2A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK4088LS-1E 2SK4088LS-1E onsemi 2SK4088LS_May2013.pdf Description: MOSFET N-CH 650V 7.5A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK4099LS-1E 2SK4099LS-1E onsemi Description: MOSFET N-CH 600V 6.9A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK4124-1E onsemi Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4125-1E onsemi Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4177-DL-1E 2SK4177-DL-1E onsemi ENA0869-D.PDF Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK536-MTK-TB-E onsemi Description: MOSFET N-CH 50V 0.1A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: 3-CP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
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2SK596S-A 2SK596S-A onsemi 2SK596S_Rev_Aug2013.pdf Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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2SK596S-C 2SK596S-C onsemi Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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ESD8104MUTAG ESD8104-D.PDF
ESD8104MUTAG
Виробник: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+65.81 грн
10+39.63 грн
50+29.08 грн
100+24.08 грн
500+18.47 грн
Мінімальне замовлення: 5 шт
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MG2040MUTAG mg2040-d.pdf
MG2040MUTAG
Виробник: onsemi
Description: TVS DIODE 5VWM 10VC 18UDFN
Packaging: Cut Tape (CT)
Package / Case: 18-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 18-UDFN (5.5x1.5)
Unidirectional Channels: 14
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
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NIS5132MN2TXG nis5132-d.pdf
NIS5132MN2TXG
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Part Status: Not For New Designs
на замовлення 8215 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+74.54 грн
10+51.77 грн
25+46.73 грн
100+38.71 грн
250+36.25 грн
500+34.77 грн
1000+33.01 грн
2500+31.74 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
NIS5135MN2TXG nis5135-d.pdf
NIS5135MN2TXG
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
на замовлення 7081 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+88.81 грн
10+76.51 грн
25+72.60 грн
100+52.32 грн
250+46.24 грн
500+43.80 грн
1000+33.51 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
NSBC124EF3T5G dtc124e-d.pdf
NSBC124EF3T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 4290 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+34.10 грн
16+20.31 грн
100+12.85 грн
500+9.03 грн
1000+8.05 грн
2000+7.22 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FEBFHR1200-SPG01A-GEVB FEBFHR1200_SPG01A.pdf
FEBFHR1200-SPG01A-GEVB
Виробник: onsemi
Description: EVAL BOARD SHUNT REGULATOR
Packaging: Bulk
Type: Power Management
Utilized IC / Part: FHR1200
Supplied Contents: Board(s)
товару немає в наявності
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2N7002WST1G
Виробник: onsemi
Description: MOSFET N-CH 60V 0.115A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2SA1418T-TD-E en1788-d.pdf
2SA1418T-TD-E
Виробник: onsemi
Description: TRANS PNP 160V 0.7A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
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2SA2125-S-TD-E
2SA2125-S-TD-E
Виробник: onsemi
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
товару немає в наявності
В кошику  од. на суму  грн.
2SA2125-S-TD-H
2SA2125-S-TD-H
Виробник: onsemi
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
товару немає в наявності
В кошику  од. на суму  грн.
2SA2126-S-TL-E en7990-d.pdf
2SA2126-S-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 3A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA2210-1E 2SA2210-D.PDF
2SA2210-1E
Виробник: onsemi
Description: TRANS PNP 50V 20A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SA2210-EPN-1EX
Виробник: onsemi
Description: TRANS PNP 50V 20A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1203S-H-TL-E
2SB1203S-H-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1203T-H-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB817C-1E ENA0188-D.PDF
2SB817C-1E
Виробник: onsemi
Description: TRANS PNP 140V 12A TO-3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 120 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC3332R
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC3332R-AA
2SC3332R-AA
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товару немає в наявності
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2SC3646S-P-TD-E
2SC3646S-P-TD-E
Виробник: onsemi
Description: TRANS NPN 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SC3646T-P-TD-E
2SC3646T-P-TD-E
Виробник: onsemi
Description: TRANS NPN 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SC4486S-AN
Виробник: onsemi
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC4486T-AN
2SC4486T-AN
Виробник: onsemi
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5231C8-TL-E
Виробник: onsemi
Description: TRANS NPN 10V 0.07A SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Supplier Device Package: SMCP
товару немає в наявності
В кошику  од. на суму  грн.
2SC5414AE
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5414AE-AA
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 3-NP
товару немає в наявності
В кошику  од. на суму  грн.
2SC5414AF
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Part Status: Obsolete
Supplier Device Package: 3-NP
товару немає в наявності
В кошику  од. на суму  грн.
2SC5414AF-AA
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Part Status: Obsolete
Supplier Device Package: 3-NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2SC5415AF-TD-E ena1080-d.pdf
2SC5415AF-TD-E
Виробник: onsemi
Description: RF TRANS NPN 12V 6.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
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2SC5488-TL-E
2SC5488-TL-E
Виробник: onsemi
Description: TRANS NPN 10V 0.07A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-623F
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Part Status: Obsolete
товару немає в наявності
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2SC5706-P-E
Виробник: onsemi
Description: TRANS NPN 100V 5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товару немає в наявності
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2SC5706-P-TL-E
Виробник: onsemi
Description: TRANS NPN 100V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товару немає в наявності
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2SC5964-S-TD-E
2SC5964-S-TD-E
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товару немає в наявності
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2SC5964-S-TD-H
2SC5964-S-TD-H
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC5964-TD-H 2sa2125-d.pdf
2SC5964-TD-H
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+17.19 грн
2000+15.04 грн
3000+14.27 грн
5000+12.57 грн
7000+12.09 грн
10000+11.62 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2SC6017-TL-EX
Виробник: onsemi
Description: TRANS NPN 50V 10A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
товару немає в наявності
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2SC6082-1E 2SC6082-D.PDF
2SC6082-1E
Виробник: onsemi
Description: TRANS NPN 50V 15A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
на замовлення 4813 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+187.13 грн
50+88.70 грн
100+79.82 грн
500+60.29 грн
1000+55.59 грн
2000+51.64 грн
Мінімальне замовлення: 2 шт
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2SC6082-EPN-1E ena0279jp-d.pdf
2SC6082-EPN-1E
Виробник: onsemi
Description: TRANS NPN 50V 15A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
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2SD1060R-1E en686-d.pdf
2SD1060R-1E
Виробник: onsemi
Description: TRANS NPN 50V 5A TO220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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2SD1060R-1EX en686-d.pdf
2SD1060R-1EX
Виробник: onsemi
Description: TRANS NPN 50V 5A TO220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Мінімальне замовлення: 300 шт
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2SD1060S-1E en686-d.pdf
2SD1060S-1E
Виробник: onsemi
Description: TRANS NPN 50V 5A TO-220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4892 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+155.41 грн
50+72.37 грн
100+64.85 грн
500+48.46 грн
1000+44.48 грн
2000+41.13 грн
Мінімальне замовлення: 3 шт
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2SJ652-1E
2SJ652-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 28A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK3703-1E
2SK3703-1E
Виробник: onsemi
Description: MOSFET N-CH 60V 30A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK3707-1E
2SK3707-1E
Виробник: onsemi
Description: MOSFET N-CH 100V 20A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK3738-TL-E EN7671-D.PDF
2SK3738-TL-E
Виробник: onsemi
Description: JFET N-CH 40V 1MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 50 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2.3 V @ 1 µA
Power - Max: 100 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SMCP
Current Drain (Id) - Max: 1 mA
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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2SK3745LS-1E 2SK3745LS-D.PDF
2SK3745LS-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO220F-3FS
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK3746-1E 2SK3746-D.PDF
2SK3746-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO3P-3L
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P-3L
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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2SK3747-1E 2SK3747-D.PDF
2SK3747-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO3PF-3
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±35V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF-3
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Packaging: Tube
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2SK3748-1E 2SK3748-D.PDF
2SK3748-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 4A TO3PF-3
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF-3
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Package / Case: SC-94
Packaging: Tube
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2SK3820-DL-1E 2SK3820-D.PDF
2SK3820-DL-1E
Виробник: onsemi
Description: MOSFET N-CH 100V 26A TO263-2
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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2SK4066-1E ONSMS35711-1.pdf?t.download=true&u=5oefqw
2SK4066-1E
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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2SK4066-DL-1E ONSMS35711-1.pdf?t.download=true&u=5oefqw
2SK4066-DL-1E
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO263-2
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
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2SK4087LS-1E
2SK4087LS-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 9.2A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK4088LS-1E 2SK4088LS_May2013.pdf
2SK4088LS-1E
Виробник: onsemi
Description: MOSFET N-CH 650V 7.5A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK4099LS-1E
2SK4099LS-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 6.9A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2SK4124-1E
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4125-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4177-DL-1E ENA0869-D.PDF
2SK4177-DL-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK536-MTK-TB-E
Виробник: onsemi
Description: MOSFET N-CH 50V 0.1A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: 3-CP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
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2SK596S-A 2SK596S_Rev_Aug2013.pdf
2SK596S-A
Виробник: onsemi
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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2SK596S-C
2SK596S-C
Виробник: onsemi
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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