| Фото | Назва | Виробник | Інформація |
Доступність |
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NCP785AH150T1G | onsemi |
 Description: IC REG LINEAR 15V 10MA SOT89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 22 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 15V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 14303 шт: термін постачання 21-31 дні (днів) |
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NCP785AH33T1G | onsemi |
Description: IC REG LINEAR 3.3V 10MA SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 14 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 3.3V PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 7447 шт: термін постачання 21-31 дні (днів) |
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NCP785AH50T1G | onsemi |
Description: IC REG LINEAR 5V 10MA SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 21 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 1436 шт: термін постачання 21-31 дні (днів) |
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FDMA86108LZ | onsemi |
Description: MOSFET N-CH 100V 2.2A 6MICROFET |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMA86108LZ | onsemi |
Description: MOSFET N-CH 100V 2.2A 6MICROFET |
на замовлення 11455 шт: термін постачання 21-31 дні (днів) |
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FAN54020UCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 25WLCSP |
товар відсутній |
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FAN54020UCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 25WLCSP |
товар відсутній |
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FDMT800150DC | onsemi |
Description: MOSFET N-CH 150V 15A/99A 8DUAL Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FDMT800100DC | onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUAL Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMT800150DC | onsemi |
Description: MOSFET N-CH 150V 15A/99A 8DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V |
на замовлення 15577 шт: термін постачання 21-31 дні (днів) |
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FDMT800100DC | onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V |
на замовлення 4803 шт: термін постачання 21-31 дні (днів) |
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| FSA553UCX | onsemi |
Description: IC AUDIO SWITCH SPST DUAL WLCSP Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 800mOhm -3db Bandwidth: 200MHz Supplier Device Package: 9-WLCSP (1.22x1.22) Voltage - Supply, Single (V+): 1.5V ~ 3V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Number of Channels: 2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| FSA553UCX | onsemi |
Description: IC AUDIO SWITCH SPST DUAL WLCSP Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 800mOhm -3db Bandwidth: 200MHz Supplier Device Package: 9-WLCSP (1.22x1.22) Voltage - Supply, Single (V+): 1.5V ~ 3V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Number of Channels: 2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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3LN01SS-TL-E | onsemi |
Description: MOSFET N-CH 30V 150MA SC81 |
товар відсутній |
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.jpg "TND321VD-TL-H") |
TND321VD-TL-H | onsemi |
Description: IC HALF BRIDGE DRIVER SOT28FL Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 11Ohm HS Applications: General Purpose Current - Peak Output: 800mA, 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: SOT-28FL/VEC8 Load Type: Inductive Part Status: Obsolete |
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TND322VD-TL-H | onsemi |
Description: IC HALF BRIDGE DRIVER SOT28FL Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 11Ohm HS Applications: General Purpose Current - Peak Output: 800mA, 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: SOT-28FL/VEC8 Load Type: Inductive Part Status: Obsolete |
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TND323VD-TL-H | onsemi |
Description: IC HALF BRIDGE DRIVER SOT28FL Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 11Ohm HS Applications: General Purpose Current - Peak Output: 800mA, 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: SOT-28FL/VEC8 Load Type: Inductive Part Status: Obsolete |
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FDN86501LZ | onsemi |
Description: MOSFET N-CH 60V 2.6A SUPERSOT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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FDN86501LZ | onsemi |
Description: MOSFET N-CH 60V 2.6A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V |
на замовлення 36536 шт: термін постачання 21-31 дні (днів) |
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FDMC86262P | onsemi |
Description: MOSFET P-CH 150V 2A/8.4A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc) Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FDMC86262P | onsemi |
Description: MOSFET P-CH 150V 2A/8.4A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc) Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V |
на замовлення 12933 шт: термін постачання 21-31 дні (днів) |
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FNA25060 | onsemi |
Description: MOD SPM 600V 50A SPMCA-A34 Packaging: Tube Package / Case: 34-PowerDIP Module (1.480", 37.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Active Current: 50 A Voltage: 600 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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FDMS86368-F085 | onsemi |
Description: MOSFET N-CH 80V 80A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V Qualification: AEC-Q101 |
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FDB86563-F085 | onsemi |
Description: MOSFET N-CH 60V 110A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V |
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FCB110N65F | onsemi |
Description: MOSFET N-CH 650V 35A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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FDMS86368-F085 | onsemi |
Description: MOSFET N-CH 80V 80A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V Qualification: AEC-Q101 |
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FDB86563-F085 | onsemi |
Description: MOSFET N-CH 60V 110A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V |
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FCB110N65F | onsemi |
Description: MOSFET N-CH 650V 35A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FSB50550ASE | onsemi |
Description: MODULE SPM 500V 2A SPM5Q Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Not For New Designs Current: 2 A Voltage: 500 V |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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FSV1045V | onsemi |
Description: DIODE SCHOTTKY 45V 10A TO277-3 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 820pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A Current - Reverse Leakage @ Vr: 220 µA @ 45 V |
на замовлення 4380 шт: термін постачання 21-31 дні (днів) |
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FSV1060V | onsemi |
Description: DIODE SCHOTTKY 60V 10A TO277-3 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 550pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
на замовлення 22488 шт: термін постачання 21-31 дні (днів) |
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HCPL2531SDVM | onsemi |
Description: OPTOISO 5KV 2CH TRANS 8SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA |
на замовлення 2291 шт: термін постачання 21-31 дні (днів) |
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| KAF-4320-AAA-JP-B1 | onsemi |
Description: IMAGE SENSOR CCD 4.3MP 84CPGA |
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| KAF-4320-AAA-JP-B2 | onsemi |
Description: IMAGE SENSOR CCD 4.3MP 84CPGA |
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| NOM02A4-AG01G | onsemi |
Description: MOD IMAGE SENSOR 200DPI GRN A4 Packaging: Box Package / Case: Module Supplier Device Package: Module |
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KAF-0261-AAA-CD-BA | onsemi |
Description: IMAGE SENSOR CCD VGA 24CDIP |
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KAF-0402-AAA-CB-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
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KAF-0402-AAA-CP-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
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KAF-0402-AAA-CP-B2 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
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KAF-0402-ABA-CD-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
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KAF-0402-ABA-CD-B2 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
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KAF-0402-ABA-CP-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
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KAF-0402-ABA-CP-B2 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
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| KAF-1001-AAA-CB-B2 | onsemi |
Description: IMAGE SENSOR CCD 1.0MP 26CDIP |
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| KAF-1001-AAA-CP-B1 | onsemi |
Description: IMAGE SENSOR CCD 1.0MP 26CDIP |
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| KAF-1001-AAA-CP-B2 | onsemi |
Description: IMAGE SENSOR CCD 1.0MP 26CDIP |
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| KAF-16801-AAA-DP-B1 | onsemi |
Description: IMAGE SENSOR CCD 16.8MP 34CDIP Packaging: Bulk Package / Case: 34-CDIP Module Type: CCD Operating Temperature: -60°C ~ 60°C (TA) Voltage - Supply: 14.5V ~ 17V Pixel Size: 9µm x 9µm Active Pixel Array: 4096H x 4096V Supplier Device Package: 34-CDIP |
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| KAF-16801-AAA-DP-B2 | onsemi |
Description: IMAGE SENSOR CCD 16.8MP 34CDIP Packaging: Bulk Package / Case: 34-CDIP Module Type: CCD Operating Temperature: -60°C ~ 60°C (TA) Voltage - Supply: 14.5V ~ 17V Pixel Size: 9µm x 9µm Active Pixel Array: 4096H x 4096V Supplier Device Package: 34-CDIP |
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| KAF-16803-ABA-DD-BA | onsemi |
Description: IMAGE SENSOR CCD 16.8MP 34CDIP Packaging: Bulk Package / Case: 34-CDIP Module Type: CCD Operating Temperature: -60°C ~ 60°C (TA) Voltage - Supply: 14.75V ~ 17V Pixel Size: 9µm x 9µm Active Pixel Array: 4096H x 4096V Supplier Device Package: 34-CDIP |
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| KAF-16803-ABA-DP-BA | onsemi |
Description: IMAGE SENSOR CCD 16.8MP 34CDIP Packaging: Bulk Package / Case: 34-CDIP Module Type: CCD Operating Temperature: -60°C ~ 60°C (TA) Voltage - Supply: 14.75V ~ 17V Pixel Size: 9µm x 9µm Active Pixel Array: 4096H x 4096V Supplier Device Package: 34-CDIP |
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KAF-3200-ABA-CD-B2 | onsemi |
Description: IMAGE SENSOR CCD 3.3MP 24CDIP Packaging: Bulk Package / Case: 24-CDIP Module Type: CCD Operating Temperature: -60°C ~ 60°C (TA) Voltage - Supply: 14.5V ~ 15.25V Pixel Size: 6.8µm x 6.8µm Active Pixel Array: 2184H x 1472V Supplier Device Package: 24-CDIP |
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KAF-3200-ABA-CP-B2 | onsemi |
Description: IMAGE SENSOR CCD 3.3MP 24CDIP Packaging: Bulk Package / Case: 24-CDIP Module Type: CCD Operating Temperature: -60°C ~ 60°C (TA) Voltage - Supply: 14.5V ~ 15.25V Pixel Size: 6.8µm x 6.8µm Active Pixel Array: 2184H x 1472V Supplier Device Package: 24-CDIP |
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| KAF-40000-CXA-JD-AA | onsemi |
Description: IMAGE SENSOR CCD 40MP 52CPGA Packaging: Bulk Package / Case: 52-BCPGA Type: CCD Operating Temperature: 0°C ~ 60°C (TA) Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 6µm x 6µm Active Pixel Array: 7304H x 5478V Supplier Device Package: 52-CPGA (57.5x49) Part Status: Obsolete |
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| KAF-50100-AAA-JD-BA | onsemi |
Description: IMAGE SENSOR CCD 50.1MP 52CPGA Packaging: Bulk Package / Case: 52-BCPGA Type: CCD Operating Temperature: 0°C ~ 60°C (TA) Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 6µm x 6µm Active Pixel Array: 8176H x 6132V Supplier Device Package: 52-CPGA (57.5x49) Part Status: Obsolete |
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| KAF-50100-ABA-JR-BA | onsemi |
Description: IMAGE SENSOR CCD 50.1MP 52CPGA Packaging: Bulk Package / Case: 52-BCPGA Type: CCD Operating Temperature: 0°C ~ 60°C (TA) Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 6µm x 6µm Active Pixel Array: 8176H x 6132V Supplier Device Package: 52-CPGA (57.5x49) Part Status: Discontinued at Digi-Key |
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| KAF-50100-CAA-JD-AA | onsemi |
Description: IMAGE SENSOR CCD 50.1MP 52CPGA Packaging: Bulk Package / Case: 52-BCPGA Type: CCD Operating Temperature: 0°C ~ 60°C (TA) Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 6µm x 6µm Active Pixel Array: 8176H x 6132V Supplier Device Package: 52-CPGA (57.5x49) Part Status: Obsolete |
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| KAF-6303-AAA-CD-B2 | onsemi |
Description: IMAGE SENSOR CCD 6.3MP 26CDIP |
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| KAF-8300-AXC-CB-AA | onsemi |
Description: IMAGE SENSOR CCD 8.3MP 32CDIP Packaging: Bulk Package / Case: 32-CDIP Module Type: CCD Operating Temperature: -10°C ~ 70°C (TA) Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.4µm x 5.4µm Active Pixel Array: 3326H x 2504V Supplier Device Package: 32-CDIP Part Status: Obsolete |
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| KAF-8300-AXC-CD-AA | onsemi |
Description: IMAGE SENSOR CCD 8.3MP 32CDIP Packaging: Bulk Package / Case: 32-CDIP Module Type: CCD Operating Temperature: -10°C ~ 70°C (TA) Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.4µm x 5.4µm Active Pixel Array: 3326H x 2504V Supplier Device Package: 32-CDIP Part Status: Obsolete |
товар відсутній |
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| KAF-8300-AXC-CP-AA | onsemi |
Description: IMAGE SENSOR CCD 8.3MP 32CDIP Packaging: Bulk Package / Case: 32-CDIP Module Type: CCD Operating Temperature: -10°C ~ 70°C (TA) Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.4µm x 5.4µm Active Pixel Array: 3326H x 2504V Supplier Device Package: 32-CDIP Part Status: Obsolete |
товар відсутній |
| NCP785AH150T1G |
|
Виробник: onsemi
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 14303 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.99 грн |
| 10+ | 57.58 грн |
| 25+ | 54.66 грн |
| 100+ | 39.39 грн |
| 250+ | 34.81 грн |
| 500+ | 32.98 грн |
| 1000+ | 25.23 грн |
| NCP785AH33T1G |
|
Виробник: onsemi
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 7447 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.99 грн |
| 10+ | 57.58 грн |
| 25+ | 54.66 грн |
| 100+ | 39.39 грн |
| 250+ | 34.81 грн |
| 500+ | 32.98 грн |
| 1000+ | 25.23 грн |
| NCP785AH50T1G |
|
Виробник: onsemi
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 1436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 74.12 грн |
| 10+ | 63.96 грн |
| 25+ | 60.72 грн |
| 100+ | 43.75 грн |
| 250+ | 38.67 грн |
| 500+ | 36.63 грн |
| 1000+ | 28.02 грн |
| FDMA86108LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Description: MOSFET N-CH 100V 2.2A 6MICROFET
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 36.52 грн |
| 6000+ | 33.41 грн |
| FDMA86108LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Description: MOSFET N-CH 100V 2.2A 6MICROFET
на замовлення 11455 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.24 грн |
| 10+ | 74.12 грн |
| 100+ | 57.77 грн |
| 500+ | 44.79 грн |
| 1000+ | 35.36 грн |
| FDMT800150DC |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 247.61 грн |
| FDMT800100DC |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 283.05 грн |
| FDMT800150DC |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
на замовлення 15577 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 334.97 грн |
| 10+ | 276.31 грн |
| 100+ | 238.44 грн |
| FDMT800100DC |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
на замовлення 4803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 532.39 грн |
| 10+ | 439.58 грн |
| 100+ | 366.29 грн |
| 500+ | 303.31 грн |
| 1000+ | 272.98 грн |
| FSA553UCX |
|
Виробник: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 44.06 грн |
| FSA553UCX |
|
Виробник: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.04 грн |
| 10+ | 94.09 грн |
| 25+ | 89.33 грн |
| 100+ | 64.36 грн |
| 250+ | 56.88 грн |
| 500+ | 53.89 грн |
| 1000+ | 41.22 грн |
| TND321VD-TL-H |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
товар відсутній
| TND322VD-TL-H |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
товар відсутній
| TND323VD-TL-H |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
товар відсутній
| FDN86501LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 58.68 грн |
| 6000+ | 54.38 грн |
| 9000+ | 52.58 грн |
| FDN86501LZ |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
на замовлення 36536 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.42 грн |
| 10+ | 104.11 грн |
| 100+ | 82.85 грн |
| 500+ | 65.79 грн |
| 1000+ | 55.82 грн |
| FDMC86262P |
|
Виробник: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 33.47 грн |
| 6000+ | 30.7 грн |
| 9000+ | 29.28 грн |
| FDMC86262P |
|
Виробник: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
на замовлення 12933 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.25 грн |
| 10+ | 63.76 грн |
| 100+ | 49.59 грн |
| 500+ | 39.44 грн |
| 1000+ | 32.13 грн |
| FNA25060 |
|
Виробник: onsemi
Description: MOD SPM 600V 50A SPMCA-A34
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 600 V
Description: MOD SPM 600V 50A SPMCA-A34
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3838.6 грн |
| FDMS86368-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
| FDB86563-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
товар відсутній
| FCB110N65F |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 250.88 грн |
| 1600+ | 217.43 грн |
| FDMS86368-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
| FDB86563-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
товар відсутній
| FCB110N65F |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 398.4 грн |
| 10+ | 328.6 грн |
| 100+ | 273.8 грн |
| FSB50550ASE |
|
Виробник: onsemi
Description: MODULE SPM 500V 2A SPM5Q
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Not For New Designs
Current: 2 A
Voltage: 500 V
Description: MODULE SPM 500V 2A SPM5Q
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Not For New Designs
Current: 2 A
Voltage: 500 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 654.97 грн |
| 10+ | 540.67 грн |
| 100+ | 450.56 грн |
| FSV1045V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 10A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
на замовлення 4380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.81 грн |
| 10+ | 66.71 грн |
| 100+ | 51.9 грн |
| 500+ | 41.28 грн |
| 1000+ | 33.63 грн |
| 2000+ | 31.66 грн |
| FSV1060V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 10A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SCHOTTKY 60V 10A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 22488 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.96 грн |
| 10+ | 64.44 грн |
| 100+ | 50.11 грн |
| 500+ | 39.86 грн |
| 1000+ | 32.47 грн |
| 2000+ | 30.57 грн |
| HCPL2531SDVM |
|
Виробник: onsemi
Description: OPTOISO 5KV 2CH TRANS 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV 2CH TRANS 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
на замовлення 2291 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 152.52 грн |
| 10+ | 98.07 грн |
| 100+ | 75.48 грн |
| 500+ | 64.03 грн |
| NOM02A4-AG01G |
|
Виробник: onsemi
Description: MOD IMAGE SENSOR 200DPI GRN A4
Packaging: Box
Package / Case: Module
Supplier Device Package: Module
Description: MOD IMAGE SENSOR 200DPI GRN A4
Packaging: Box
Package / Case: Module
Supplier Device Package: Module
товар відсутній
| KAF-16801-AAA-DP-B1 |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Packaging: Bulk
Package / Case: 34-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 17V
Pixel Size: 9µm x 9µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 34-CDIP
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Packaging: Bulk
Package / Case: 34-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 17V
Pixel Size: 9µm x 9µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 34-CDIP
товар відсутній
| KAF-16801-AAA-DP-B2 |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Packaging: Bulk
Package / Case: 34-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 17V
Pixel Size: 9µm x 9µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 34-CDIP
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Packaging: Bulk
Package / Case: 34-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 17V
Pixel Size: 9µm x 9µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 34-CDIP
товар відсутній
| KAF-16803-ABA-DD-BA |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Packaging: Bulk
Package / Case: 34-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.75V ~ 17V
Pixel Size: 9µm x 9µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 34-CDIP
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Packaging: Bulk
Package / Case: 34-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.75V ~ 17V
Pixel Size: 9µm x 9µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 34-CDIP
товар відсутній
| KAF-16803-ABA-DP-BA |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Packaging: Bulk
Package / Case: 34-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.75V ~ 17V
Pixel Size: 9µm x 9µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 34-CDIP
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Packaging: Bulk
Package / Case: 34-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.75V ~ 17V
Pixel Size: 9µm x 9µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 34-CDIP
товар відсутній
| KAF-3200-ABA-CD-B2 |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 3.3MP 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.25V
Pixel Size: 6.8µm x 6.8µm
Active Pixel Array: 2184H x 1472V
Supplier Device Package: 24-CDIP
Description: IMAGE SENSOR CCD 3.3MP 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.25V
Pixel Size: 6.8µm x 6.8µm
Active Pixel Array: 2184H x 1472V
Supplier Device Package: 24-CDIP
товар відсутній
| KAF-3200-ABA-CP-B2 |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 3.3MP 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.25V
Pixel Size: 6.8µm x 6.8µm
Active Pixel Array: 2184H x 1472V
Supplier Device Package: 24-CDIP
Description: IMAGE SENSOR CCD 3.3MP 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Operating Temperature: -60°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.25V
Pixel Size: 6.8µm x 6.8µm
Active Pixel Array: 2184H x 1472V
Supplier Device Package: 24-CDIP
товар відсутній
| KAF-40000-CXA-JD-AA |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 40MP 52CPGA
Packaging: Bulk
Package / Case: 52-BCPGA
Type: CCD
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 6µm x 6µm
Active Pixel Array: 7304H x 5478V
Supplier Device Package: 52-CPGA (57.5x49)
Part Status: Obsolete
Description: IMAGE SENSOR CCD 40MP 52CPGA
Packaging: Bulk
Package / Case: 52-BCPGA
Type: CCD
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 6µm x 6µm
Active Pixel Array: 7304H x 5478V
Supplier Device Package: 52-CPGA (57.5x49)
Part Status: Obsolete
товар відсутній
| KAF-50100-AAA-JD-BA |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 50.1MP 52CPGA
Packaging: Bulk
Package / Case: 52-BCPGA
Type: CCD
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 6µm x 6µm
Active Pixel Array: 8176H x 6132V
Supplier Device Package: 52-CPGA (57.5x49)
Part Status: Obsolete
Description: IMAGE SENSOR CCD 50.1MP 52CPGA
Packaging: Bulk
Package / Case: 52-BCPGA
Type: CCD
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 6µm x 6µm
Active Pixel Array: 8176H x 6132V
Supplier Device Package: 52-CPGA (57.5x49)
Part Status: Obsolete
товар відсутній
| KAF-50100-ABA-JR-BA |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 50.1MP 52CPGA
Packaging: Bulk
Package / Case: 52-BCPGA
Type: CCD
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 6µm x 6µm
Active Pixel Array: 8176H x 6132V
Supplier Device Package: 52-CPGA (57.5x49)
Part Status: Discontinued at Digi-Key
Description: IMAGE SENSOR CCD 50.1MP 52CPGA
Packaging: Bulk
Package / Case: 52-BCPGA
Type: CCD
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 6µm x 6µm
Active Pixel Array: 8176H x 6132V
Supplier Device Package: 52-CPGA (57.5x49)
Part Status: Discontinued at Digi-Key
товар відсутній
| KAF-50100-CAA-JD-AA |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 50.1MP 52CPGA
Packaging: Bulk
Package / Case: 52-BCPGA
Type: CCD
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 6µm x 6µm
Active Pixel Array: 8176H x 6132V
Supplier Device Package: 52-CPGA (57.5x49)
Part Status: Obsolete
Description: IMAGE SENSOR CCD 50.1MP 52CPGA
Packaging: Bulk
Package / Case: 52-BCPGA
Type: CCD
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 6µm x 6µm
Active Pixel Array: 8176H x 6132V
Supplier Device Package: 52-CPGA (57.5x49)
Part Status: Obsolete
товар відсутній
| KAF-8300-AXC-CB-AA |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 8.3MP 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP Module
Type: CCD
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.4µm x 5.4µm
Active Pixel Array: 3326H x 2504V
Supplier Device Package: 32-CDIP
Part Status: Obsolete
Description: IMAGE SENSOR CCD 8.3MP 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP Module
Type: CCD
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.4µm x 5.4µm
Active Pixel Array: 3326H x 2504V
Supplier Device Package: 32-CDIP
Part Status: Obsolete
товар відсутній
| KAF-8300-AXC-CD-AA |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 8.3MP 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP Module
Type: CCD
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.4µm x 5.4µm
Active Pixel Array: 3326H x 2504V
Supplier Device Package: 32-CDIP
Part Status: Obsolete
Description: IMAGE SENSOR CCD 8.3MP 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP Module
Type: CCD
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.4µm x 5.4µm
Active Pixel Array: 3326H x 2504V
Supplier Device Package: 32-CDIP
Part Status: Obsolete
товар відсутній
| KAF-8300-AXC-CP-AA |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 8.3MP 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP Module
Type: CCD
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.4µm x 5.4µm
Active Pixel Array: 3326H x 2504V
Supplier Device Package: 32-CDIP
Part Status: Obsolete
Description: IMAGE SENSOR CCD 8.3MP 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP Module
Type: CCD
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.4µm x 5.4µm
Active Pixel Array: 3326H x 2504V
Supplier Device Package: 32-CDIP
Part Status: Obsolete
товар відсутній