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NC7ST32P5 NC7ST32P5 onsemi ONSM-S-A0003590421-1.pdf?t.download=true&u=5oefqw Description: IC GATE OR 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7SV04L6X NC7SV04L6X onsemi ONSM-S-A0003590925-1.pdf?t.download=true&u=5oefqw Description: IC INVERTER 1CH 1-INP 6MICROPAK
на замовлення 95202 шт:
термін постачання 21-31 дні (днів)
7+46.69 грн
10+38.29 грн
25+35.72 грн
100+26.80 грн
250+24.88 грн
500+21.06 грн
1000+16.01 грн
2500+14.59 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NC7SV86L6X NC7SV86L6X onsemi nc7sv86-d.pdf Description: IC GATE XOR 1CH 2-INP 6MICROPAK
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NC7SZ05L6X NC7SZ05L6X onsemi ONSM-S-A0003591171-1.pdf?t.download=true&u=5oefqw Description: IC INVERT OD 1CH 1-INP 6MICROPAK
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NC7SZ10L6X NC7SZ10L6X onsemi nc7sz10-d.pdf Description: IC GATE NAND 1CH 3-INP 6MICROPAK
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NC7SZ386P6X NC7SZ386P6X onsemi nc7sz386-d.pdf Description: IC GATE XOR 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88 (SC-70-6)
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 194595 шт:
термін постачання 21-31 дні (днів)
14+23.34 грн
24+12.94 грн
30+10.54 грн
100+7.34 грн
250+6.08 грн
500+5.30 грн
1000+4.57 грн
Мінімальне замовлення: 14
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NC7WP125L8X NC7WP125L8X onsemi nc7wp125-d.pdf Description: IC BUF NON-INVERT 3.6V 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 2.6mA, 2.6mA
Supplier Device Package: 8-MicroPak™
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NC7WP32L8X NC7WP32L8X onsemi nc7wp32-d.pdf Description: IC GATE OR 2CH 2-INP 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 8-MicroPak™
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
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NC7WV14L6X NC7WV14L6X onsemi nc7wv14-d.pdf Description: IC INVERTER 2CH 2-INP 6MICROPAK
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NC7WZ02L8X NC7WZ02L8X onsemi nc7wz02-d.pdf Description: IC GATE NOR 2CH 2-INP 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 3.7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
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NC7WZ241L8X NC7WZ241L8X onsemi FAIRS42890-1.pdf?t.download=true&u=5oefqw Description: IC BUF NON-INVERT 5.5V 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
Part Status: Obsolete
на замовлення 4875 шт:
термін постачання 21-31 дні (днів)
7+51.52 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PZTA29 PZTA29 onsemi pzta29-d.pdf Description: TRANS NPN DARL 100V 0.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 5282 шт:
термін постачання 21-31 дні (днів)
9+37.03 грн
11+30.23 грн
100+20.98 грн
500+15.38 грн
1000+12.50 грн
2000+11.17 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
QED123A4R0 QED123A4R0 onsemi qed123-d.pdf Description: EMITTER IR 880NM 100MA RADIAL
Packaging: Cut Tape (CT)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 890nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Viewing Angle: 16°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 50mW/sr @ 100mA
на замовлення 13827 шт:
термін постачання 21-31 дні (днів)
7+49.91 грн
10+32.87 грн
100+23.87 грн
500+18.63 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
RGF1K RGF1K onsemi RGF1M-D.PDF Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 7183 шт:
термін постачання 21-31 дні (днів)
12+28.98 грн
14+23.25 грн
100+18.37 грн
500+13.09 грн
1000+10.22 грн
2000+10.05 грн
Мінімальне замовлення: 12
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SB520 SB520 onsemi sb580-d.pdf Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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H11AA4SR2VM H11AA4SR2VM onsemi h11aa4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 3056 шт:
термін постачання 21-31 дні (днів)
4+88.55 грн
10+59.92 грн
100+44.61 грн
500+35.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STK544UC62K-E STK544UC62K-E onsemi stk544uc62k-e-d.pdf Description: IC HALF BRIDGE DRIVER 10A 23SIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 23-SIP-1
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
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STK551U362A-E STK551U362A-E onsemi stk551u362a-e-d.pdf Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
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STK551U392A-E STK551U392A-E onsemi stk551u392a-e-d.pdf Description: IC HALF BRIDGE DRIVER 15A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 15A
Current - Peak Output: 30A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+1642.11 грн
10+1453.55 грн
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STK554U362A-E STK554U362A-E onsemi stk554u362a-e-d.pdf Description: IC HALF BRIDGE DRIVER 10A 29SIP
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
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STK554U362C-E STK554U362C-E onsemi stk554u362c-e-d.pdf Description: IC HALF BRIDGE DRIVER 10A 29SIP
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
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FCMT199N60 FCMT199N60 onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+170.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDBL86210-F085 FDBL86210-F085 onsemi fdbl86210_f085-d.pdf Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+207.48 грн
Мінімальне замовлення: 2000
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FDMC86259P FDMC86259P onsemi fdmc86259p-d.pdf Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+92.21 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDMD84100 FDMD84100 onsemi fdmd84100-d.pdf Description: MOSFET 2N-CH 100V 7A 8-PQFN
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FDMS86263P FDMS86263P onsemi fdms86263p-d.pdf Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
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FL7733MX FL7733MX onsemi FL7733.pdf Description: IC LED DRIVER OFFL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
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FCMT199N60 FCMT199N60 onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 15653 шт:
термін постачання 21-31 дні (днів)
1+384.77 грн
10+266.26 грн
100+200.97 грн
В кошику  од. на суму  грн.
FDBL86210-F085 FDBL86210-F085 onsemi fdbl86210_f085-d.pdf Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
на замовлення 3911 шт:
термін постачання 21-31 дні (днів)
1+498.27 грн
10+322.92 грн
100+234.31 грн
500+187.50 грн
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FDMC86259P FDMC86259P onsemi fdmc86259p-d.pdf Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 13887 шт:
термін постачання 21-31 дні (днів)
2+207.68 грн
10+152.47 грн
100+121.92 грн
500+101.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMD84100 FDMD84100 onsemi fdmd84100-d.pdf Description: MOSFET 2N-CH 100V 7A 8-PQFN
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FDMS86263P FDMS86263P onsemi fdms86263p-d.pdf Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
на замовлення 1451 шт:
термін постачання 21-31 дні (днів)
2+259.20 грн
10+176.73 грн
100+127.23 грн
500+107.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FL7733MX FL7733MX onsemi FL7733.pdf Description: IC LED DRIVER OFFL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
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FDB024N08BL7 FDB024N08BL7 onsemi fdb024n08bl7-d.pdf Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 95200 шт:
термін постачання 21-31 дні (днів)
800+158.33 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
FDB20N50F FDB20N50F onsemi fdb20n50f-d.pdf Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+110.76 грн
1600+105.42 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
FDMC4435BZ-F126 FDMC4435BZ-F126 onsemi fdmc4435bz-d.pdf Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
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FDMC7692S-F126 FDMC7692S-F126 onsemi fdmc7692s-d.pdf Description: MOSFET N-CH 30V 12.5A/18A 8MLP
товару немає в наявності
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FDMC8878_F126 FDMC8878_F126 onsemi FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
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В кошику  од. на суму  грн.
FDMC8884-F126 FDMC8884-F126 onsemi FDMC8884_RevE4_Jun2014.pdf Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
товару немає в наявності
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FODM3022R4_NF098 FODM3022R4_NF098 onsemi FODM30xx.pdf Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
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FQB5N60CTM-WS FQB5N60CTM-WS onsemi FQB5N60CTM_WS.pdf Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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FQB8N60CTM-WS FQB8N60CTM-WS onsemi fqi8n60c-d.pdf Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
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FQD2N60CTM-WS FQD2N60CTM-WS onsemi fqu2n60c-d.pdf Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
товару немає в наявності
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FQD4P40TM-AM002 FQD4P40TM-AM002 onsemi Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
товару немає в наявності
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FQD5N60CTM-WS FQD5N60CTM-WS onsemi fqu5n60c-d.pdf Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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MDB10SV MDB10SV onsemi MDB10SV.pdf Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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FDZ1416NZ FDZ1416NZ onsemi fdz1416nz-d.pdf Description: MOSFET 2N-CH 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
товару немає в наявності
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NC7SB3157P6X-F080 NC7SB3157P6X-F080 onsemi NC7SB3157%2C%20FSA3157.pdf Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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NC7SB3157P6X-F40 NC7SB3157P6X-F40 onsemi NC7SB3157%2C%20FSA3157.pdf Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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FQA16N50-F109 FQA16N50-F109 onsemi Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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FQU5N50CTU-WS FQU5N50CTU-WS onsemi FQU5N50CTU_WS.pdf Description: MOSFET N-CH 500V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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FDB024N08BL7 FDB024N08BL7 onsemi fdb024n08bl7-d.pdf Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 95552 шт:
термін постачання 21-31 дні (днів)
1+405.70 грн
10+260.99 грн
100+187.24 грн
В кошику  од. на суму  грн.
FDB20N50F FDB20N50F onsemi fdb20n50f-d.pdf Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)
2+285.76 грн
10+196.03 грн
100+139.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMC7692S-F126 FDMC7692S-F126 onsemi fdmc7692s-d.pdf Description: MOSFET N-CH 30V 12.5A/18A 8MLP
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FODM3022R4_NF098 FODM3022R4_NF098 onsemi FODM30xx.pdf Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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FQB5N60CTM-WS FQB5N60CTM-WS onsemi FQB5N60CTM_WS.pdf Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
2+165.02 грн
10+101.78 грн
100+69.24 грн
Мінімальне замовлення: 2
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FQD4P40TM-AM002 FQD4P40TM-AM002 onsemi Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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FQD5N60CTM-WS FQD5N60CTM-WS onsemi fqu5n60c-d.pdf Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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MDB10SV MDB10SV onsemi MDB10SV.pdf Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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FDZ1416NZ FDZ1416NZ onsemi fdz1416nz-d.pdf Description: MOSFET 2N-CH 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
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NC7ST32P5 ONSM-S-A0003590421-1.pdf?t.download=true&u=5oefqw
NC7ST32P5
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7SV04L6X ONSM-S-A0003590925-1.pdf?t.download=true&u=5oefqw
NC7SV04L6X
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
на замовлення 95202 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+46.69 грн
10+38.29 грн
25+35.72 грн
100+26.80 грн
250+24.88 грн
500+21.06 грн
1000+16.01 грн
2500+14.59 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NC7SV86L6X nc7sv86-d.pdf
NC7SV86L6X
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP 6MICROPAK
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NC7SZ05L6X ONSM-S-A0003591171-1.pdf?t.download=true&u=5oefqw
NC7SZ05L6X
Виробник: onsemi
Description: IC INVERT OD 1CH 1-INP 6MICROPAK
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NC7SZ10L6X nc7sz10-d.pdf
NC7SZ10L6X
Виробник: onsemi
Description: IC GATE NAND 1CH 3-INP 6MICROPAK
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NC7SZ386P6X nc7sz386-d.pdf
NC7SZ386P6X
Виробник: onsemi
Description: IC GATE XOR 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88 (SC-70-6)
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 194595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.34 грн
24+12.94 грн
30+10.54 грн
100+7.34 грн
250+6.08 грн
500+5.30 грн
1000+4.57 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
NC7WP125L8X nc7wp125-d.pdf
NC7WP125L8X
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 2.6mA, 2.6mA
Supplier Device Package: 8-MicroPak™
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NC7WP32L8X nc7wp32-d.pdf
NC7WP32L8X
Виробник: onsemi
Description: IC GATE OR 2CH 2-INP 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 8-MicroPak™
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
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NC7WV14L6X nc7wv14-d.pdf
NC7WV14L6X
Виробник: onsemi
Description: IC INVERTER 2CH 2-INP 6MICROPAK
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NC7WZ02L8X nc7wz02-d.pdf
NC7WZ02L8X
Виробник: onsemi
Description: IC GATE NOR 2CH 2-INP 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 3.7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
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NC7WZ241L8X FAIRS42890-1.pdf?t.download=true&u=5oefqw
NC7WZ241L8X
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
Part Status: Obsolete
на замовлення 4875 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.52 грн
Мінімальне замовлення: 7
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PZTA29 pzta29-d.pdf
PZTA29
Виробник: onsemi
Description: TRANS NPN DARL 100V 0.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 5282 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.03 грн
11+30.23 грн
100+20.98 грн
500+15.38 грн
1000+12.50 грн
2000+11.17 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
QED123A4R0 qed123-d.pdf
QED123A4R0
Виробник: onsemi
Description: EMITTER IR 880NM 100MA RADIAL
Packaging: Cut Tape (CT)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 890nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Viewing Angle: 16°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 50mW/sr @ 100mA
на замовлення 13827 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.91 грн
10+32.87 грн
100+23.87 грн
500+18.63 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
RGF1K RGF1M-D.PDF
RGF1K
Виробник: onsemi
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 7183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.98 грн
14+23.25 грн
100+18.37 грн
500+13.09 грн
1000+10.22 грн
2000+10.05 грн
Мінімальне замовлення: 12
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SB520 sb580-d.pdf
SB520
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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H11AA4SR2VM h11aa4m-d.pdf
H11AA4SR2VM
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 3056 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.55 грн
10+59.92 грн
100+44.61 грн
500+35.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STK544UC62K-E stk544uc62k-e-d.pdf
STK544UC62K-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 23SIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 23-SIP-1
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
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STK551U362A-E stk551u362a-e-d.pdf
STK551U362A-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
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STK551U392A-E stk551u392a-e-d.pdf
STK551U392A-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 15A 29SIP
Packaging: Bulk
Features: Bootstrap Circuit, Latch Function, Status Flag
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 15A
Current - Peak Output: 30A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1642.11 грн
10+1453.55 грн
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STK554U362A-E stk554u362a-e-d.pdf
STK554U362A-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
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STK554U362C-E stk554u362c-e-d.pdf
STK554U362C-E
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 29SIP
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 450V (Max)
Supplier Device Package: 29-SIP
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive
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FCMT199N60 fcmt199n60-d.pdf
FCMT199N60
Виробник: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+170.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDBL86210-F085 fdbl86210_f085-d.pdf
FDBL86210-F085
Виробник: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+207.48 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
FDMC86259P fdmc86259p-d.pdf
FDMC86259P
Виробник: onsemi
Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+92.21 грн
Мінімальне замовлення: 3000
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FDMD84100 fdmd84100-d.pdf
FDMD84100
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7A 8-PQFN
товару немає в наявності
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FDMS86263P fdms86263p-d.pdf
FDMS86263P
Виробник: onsemi
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
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FL7733MX FL7733.pdf
FL7733MX
Виробник: onsemi
Description: IC LED DRIVER OFFL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
товару немає в наявності
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FCMT199N60 fcmt199n60-d.pdf
FCMT199N60
Виробник: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
на замовлення 15653 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+384.77 грн
10+266.26 грн
100+200.97 грн
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FDBL86210-F085 fdbl86210_f085-d.pdf
FDBL86210-F085
Виробник: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Qualification: AEC-Q101
на замовлення 3911 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+498.27 грн
10+322.92 грн
100+234.31 грн
500+187.50 грн
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FDMC86259P fdmc86259p-d.pdf
FDMC86259P
Виробник: onsemi
Description: MOSFET P-CH 150V 3.2A/13A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 3A, 10V
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 75 V
на замовлення 13887 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+207.68 грн
10+152.47 грн
100+121.92 грн
500+101.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMD84100 fdmd84100-d.pdf
FDMD84100
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7A 8-PQFN
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FDMS86263P fdms86263p-d.pdf
FDMS86263P
Виробник: onsemi
Description: MOSFET P-CH 150V 4.4A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
на замовлення 1451 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+259.20 грн
10+176.73 грн
100+127.23 грн
500+107.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FL7733MX FL7733.pdf
FL7733MX
Виробник: onsemi
Description: IC LED DRIVER OFFL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
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FDB024N08BL7 fdb024n08bl7-d.pdf
FDB024N08BL7
Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 95200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+158.33 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
FDB20N50F fdb20n50f-d.pdf
FDB20N50F
Виробник: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+110.76 грн
1600+105.42 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
FDMC4435BZ-F126 fdmc4435bz-d.pdf
FDMC4435BZ-F126
Виробник: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
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FDMC7692S-F126 fdmc7692s-d.pdf
FDMC7692S-F126
Виробник: onsemi
Description: MOSFET N-CH 30V 12.5A/18A 8MLP
товару немає в наявності
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FDMC8878_F126 FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw
FDMC8878_F126
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
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FDMC8884-F126 FDMC8884_RevE4_Jun2014.pdf
FDMC8884-F126
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
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FODM3022R4_NF098 FODM30xx.pdf
FODM3022R4_NF098
Виробник: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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FQB5N60CTM-WS FQB5N60CTM_WS.pdf
FQB5N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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FQB8N60CTM-WS fqi8n60c-d.pdf
FQB8N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
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FQD2N60CTM-WS fqu2n60c-d.pdf
FQD2N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
товару немає в наявності
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FQD4P40TM-AM002
FQD4P40TM-AM002
Виробник: onsemi
Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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FQD5N60CTM-WS fqu5n60c-d.pdf
FQD5N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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MDB10SV MDB10SV.pdf
MDB10SV
Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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FDZ1416NZ fdz1416nz-d.pdf
FDZ1416NZ
Виробник: onsemi
Description: MOSFET 2N-CH 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
товару немає в наявності
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NC7SB3157P6X-F080 NC7SB3157%2C%20FSA3157.pdf
NC7SB3157P6X-F080
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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NC7SB3157P6X-F40 NC7SB3157%2C%20FSA3157.pdf
NC7SB3157P6X-F40
Виробник: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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FQA16N50-F109
FQA16N50-F109
Виробник: onsemi
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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FQU5N50CTU-WS FQU5N50CTU_WS.pdf
FQU5N50CTU-WS
Виробник: onsemi
Description: MOSFET N-CH 500V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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FDB024N08BL7 fdb024n08bl7-d.pdf
FDB024N08BL7
Виробник: onsemi
Description: MOSFET N-CH 80V 120A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
на замовлення 95552 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+405.70 грн
10+260.99 грн
100+187.24 грн
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FDB20N50F fdb20n50f-d.pdf
FDB20N50F
Виробник: onsemi
Description: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+285.76 грн
10+196.03 грн
100+139.03 грн
Мінімальне замовлення: 2
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FDMC7692S-F126 fdmc7692s-d.pdf
FDMC7692S-F126
Виробник: onsemi
Description: MOSFET N-CH 30V 12.5A/18A 8MLP
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FODM3022R4_NF098 FODM30xx.pdf
FODM3022R4_NF098
Виробник: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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FQB5N60CTM-WS FQB5N60CTM_WS.pdf
FQB5N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.02 грн
10+101.78 грн
100+69.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FQD4P40TM-AM002
FQD4P40TM-AM002
Виробник: onsemi
Description: MOSFET P-CH 400V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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FQD5N60CTM-WS fqu5n60c-d.pdf
FQD5N60CTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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MDB10SV MDB10SV.pdf
MDB10SV
Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1.2A MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.2 A
Voltage - Forward (Vf) (Max) @ If: 1.015 V @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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FDZ1416NZ fdz1416nz-d.pdf
FDZ1416NZ
Виробник: onsemi
Description: MOSFET 2N-CH 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.4)
Part Status: Obsolete
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