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BBS3002-DL-1E BBS3002-DL-1E onsemi Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BBS3002-TL-1E BBS3002-TL-1E onsemi Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BC337-25RLRAG BC337-25RLRAG onsemi Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BD135TG BD135TG onsemi bd135-d.pdf Description: TRANS NPN 45V 1.5A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
4+87.33 грн
50+39.17 грн
100+34.75 грн
Мінімальне замовлення: 4
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BD438TG BD438TG onsemi bd438-d.pdf Description: TRANS PNP 45V 4A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
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BFL4004-1E BFL4004-1E onsemi BFL4004.pdf Description: MOSFET N-CH 800V 4.3A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
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BFL4007-1E BFL4007-1E onsemi Description: MOSFET N-CH 600V 8.7A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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BFL4026-1E BFL4026-1E onsemi bfl4026-d.pdf Description: MOSFET N-CH 900V 3.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
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BFL4037-1E BFL4037-1E onsemi Description: MOSFET N-CH 500V 11A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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BMS3003-1E BMS3003-1E onsemi ena1907-d.pdf Description: MOSFET P-CH 60V 78A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 39A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BMS3004-1E BMS3004-1E onsemi ena1908-d.pdf Description: MOSFET P-CH 75V 68A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
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CAT24C04C5ATR CAT24C04C5ATR onsemi cat24c01-d.pdf Description: IC EEPROM 4KBIT I2C 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-WLCSP (0.86x0.84)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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CAT24C512YIGT3JN CAT24C512YIGT3JN onsemi cat24c512-d.pdf Description: IC EEPROM 512KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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CAT25256HU4I-GT3 CAT25256HU4I-GT3 onsemi cat25256-d.pdf Description: IC EEPROM 256KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+38.48 грн
Мінімальне замовлення: 3000
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CAT25M01LI-G CAT25M01LI-G onsemi Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT25M01VI-G CAT25M01VI-G onsemi cat25m01-d.pdf Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT25M01VI-GT3 CAT25M01VI-GT3 onsemi cat25m01-d.pdf Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+61.56 грн
Мінімальне замовлення: 3000
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CAT25M01YI-G CAT25M01YI-G onsemi cat25m01-d.pdf Description: IC EEPROM 1MBIT SPI 10MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT34TS04HU4GT4A CAT34TS04HU4GT4A onsemi cat34ts04-d.pdf Description: SENSOR DIGITAL -20C-125C 8UDFN
Packaging: Tape & Reel (TR)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 2.2V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-UDFN-EP (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
Part Status: Obsolete
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CAT34TS04VP2GT4A CAT34TS04VP2GT4A onsemi cat34ts04-d.pdf Description: SENSOR DIGITAL -20C-125C 8TDFN
Packaging: Tape & Reel (TR)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-WFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 2.2V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-TDFN (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
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CAT6241-ADJHU2MUTAG CAT6241-ADJHU2MUTAG onsemi cat6241-d.pdf Description: IC REG LINEAR POS ADJ 1A 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-UDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable
Part Status: Obsolete
PSRR: 54dB ~ 42dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.7V @ 1A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 250 µA
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CAT872-30ULGT3 CAT872-30ULGT3 onsemi cat871-d.pdf Description: IC SUPERVISOR 2 CHANNEL 6ULLGA
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CAV24C128WE-GT3 CAV24C128WE-GT3 onsemi cav24c128-d.pdf Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CAV24C128YE-GT3 CAV24C128YE-GT3 onsemi cav24c128-d.pdf Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CAV24C256WE-GT3 CAV24C256WE-GT3 onsemi cav24c256-d.pdf Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CAV25128VE-GT3 CAV25128VE-GT3 onsemi cav25128-d.pdf Description: IC EEPROM 128KBIT SPI 8SOIC
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CAX803JTBI-T3 CAX803JTBI-T3 onsemi design-resources?notFound=CAX803-D.PDF Description: IC SUPERVISOR 1 CHANNEL SOT23-3
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CAX803ZTBI-T3 CAX803ZTBI-T3 onsemi design-resources?notFound=CAX803-D.PDF Description: IC SUPERVISOR 1 CHANNEL SOT23-3
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CPH3205-M-TL-E CPH3205-M-TL-E onsemi Description: TRANS NPN 50V 3A 3-CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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CPH3350-TL-W CPH3350-TL-W onsemi ena0151-d.pdf Description: MOSFET P-CH 20V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
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CPH3910-TL-E CPH3910-TL-E onsemi ENA1965-D.html Description: JFET N-CH 25V 50MA 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
Voltage - Breakdown (V(BR)GSS): 25 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CPH
Part Status: Active
Drain to Source Voltage (Vdss): 25 V
Power - Max: 400 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V
на замовлення 447000 шт:
термін постачання 21-31 дні (днів)
3000+10.76 грн
6000+9.93 грн
9000+9.64 грн
15000+8.70 грн
21000+8.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CPH6341-TL-W CPH6341-TL-W onsemi cph6341-d.pdf Description: MOSFET P-CH 30V 5A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
3000+17.91 грн
6000+15.90 грн
9000+15.21 грн
15000+13.64 грн
21000+13.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CPH6350-P-TL-E onsemi Description: MOSFET P-CH 30V 6A CPH6
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
CPH6350-TL-W CPH6350-TL-W onsemi cph6350-d.pdf Description: MOSFET P-CH 30V 6A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 204000 шт:
термін постачання 21-31 дні (днів)
3000+11.84 грн
6000+10.66 грн
9000+10.16 грн
15000+9.00 грн
21000+8.80 грн
30000+8.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CPH6445-TL-W CPH6445-TL-W onsemi Description: MOSFET N-CH 60V 3.5A 6CPH
товару немає в наявності
В кошику  од. на суму  грн.
DAN222M3T5G DAN222M3T5G onsemi dan222m3-d.pdf Description: DIODE ARRAY GP 80V 100MA SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
8000+2.22 грн
16000+2.08 грн
24000+2.02 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
DTA115TET1G DTA115TET1G onsemi dta115t-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+2.22 грн
6000+1.90 грн
9000+1.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTC113EET1G DTC113EET1G onsemi dtc113e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
3000+2.41 грн
6000+2.19 грн
9000+1.87 грн
30000+1.62 грн
75000+1.40 грн
150000+1.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTC144WET1G DTC144WET1G onsemi dtc144w-d.pdf Description: TRANS PREBIAS NPN 50V 100MA SC75
товару немає в наявності
В кошику  од. на суму  грн.
EFC6601R-TR EFC6601R-TR onsemi ENA2151-D.html Description: MOSFET 2N-CH EFCP2718
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
EFC6604R-A-TR onsemi Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Supplier Device Package: 6-EFCP (1.9x1.46)
товару немає в наявності
В кошику  од. на суму  грн.
EFC6604R-TR onsemi efc6604r-d.pdf Description: MOSFET 2N-CH 6EFCP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: 6-EFCP (1.9x1.46)
товару немає в наявності
В кошику  од. на суму  грн.
EMH1405-P-TL-H EMH1405-P-TL-H onsemi Description: MOSFET N-CH 30V 8.5A EMH8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tj)
Supplier Device Package: 8-EMH
товару немає в наявності
В кошику  од. на суму  грн.
EMH2407-S-TL-H EMH2407-S-TL-H onsemi Description: MOSFET 2N-CH 20V 6A EMH8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Supplier Device Package: 8-EMH
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
EMI4162MUTAG EMI4162MUTAG onsemi EMI4162MU.pdf Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 8Ohm (Typ)
товару немає в наявності
В кошику  од. на суму  грн.
EMI4163MUTAG onsemi EMI4163MU.pdf Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.157" L x 0.079" W (4.00mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 8Ohm (Typ)
товару немає в наявності
В кошику  од. на суму  грн.
EMI4182MUTAG EMI4182MUTAG onsemi Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 8Ohm (Typ)
товару немає в наявності
В кошику  од. на суму  грн.
EMI4184MUTAG EMI4184MUTAG onsemi EMI4184.pdf Description: CMC 100MA 8LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 20-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.197" L x 0.079" W (5.00mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 8
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 8Ohm (Typ)
товару немає в наявності
В кошику  од. на суму  грн.
ESD5382MUT5G ESD5382MUT5G onsemi esd5381-d.pdf Description: TVS DIODE 3VWM 26VC 2X3DFN
товару немає в наявності
В кошику  од. на суму  грн.
ESD5481MUT5G ESD5481MUT5G onsemi esd5481-d.pdf Description: TVS DIODE 5VWM 12.4VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 12.4V
Power Line Protection: No
Part Status: Active
на замовлення 1190000 шт:
термін постачання 21-31 дні (днів)
10000+2.07 грн
20000+1.71 грн
30000+1.67 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ESD7181MUT5G ESD7181MUT5G onsemi esd7181mu-d.pdf Description: TVS DIODE 18.5VWM 35VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.5V
Voltage - Clamping (Max) @ Ipp: 35V (Typ)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
ESD7381MUT5G ESD7381MUT5G onsemi esd7381-d.pdf Description: TVS DIODE 3.3VWM 10VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+6.30 грн
20000+5.73 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ESD7481MUT5G ESD7481MUT5G onsemi esd7481-d.pdf Description: TVS DIODE 3.3VWM 12VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V (Typ)
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: No
Part Status: Active
на замовлення 220000 шт:
термін постачання 21-31 дні (днів)
10000+8.35 грн
20000+7.71 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ESD9D5.0ST5G ESD9D5.0ST5G onsemi esd9d5.0s-d.pdf Description: TVS DIODE 5VWM 13.5VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.4V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESDONCAN1LT1G ESDONCAN1LT1G onsemi esdoncan1-d.pdf Description: TVS DIODE 24VWM 50VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power Line Protection: No
на замовлення 273000 шт:
термін постачання 21-31 дні (днів)
3000+7.01 грн
6000+6.71 грн
9000+6.67 грн
15000+6.14 грн
21000+5.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESDR7534W1T2G ESDR7534W1T2G onsemi esdr7534-d.pdf Description: TVS DIODE 5VWM 30VC SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: Yes
товару немає в наявності
В кошику  од. на суму  грн.
FST3125DTR2G FST3125DTR2G onsemi 74fst3125.pdf Description: IC BUS SWITCH 1 X 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
Part Status: Active
товару немає в наявності
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IMD10AMT1G IMD10AMT1G onsemi imd10amt1g-d.pdf Description: TRANS NPN/PNP PREBIAS SC74R
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 285mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V
Resistor - Base (R1): 13kOhms, 130Ohms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-74R
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+9.65 грн
6000+8.46 грн
9000+8.04 грн
15000+7.10 грн
21000+6.84 грн
30000+6.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
LA1225MC-AH LA1225MC-AH onsemi LA1225MC.pdf Description: IC RF DETECT 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 3V
Supplier Device Package: 10-SOIC
Part Status: Obsolete
Current - Supply: 4 mA
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LA1235MC-AH LA1235MC-AH onsemi Description: IC FM IF SYSTEM TUNER MFP30SDJ
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 10-SOIC
Part Status: Obsolete
товару немає в наявності
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BBS3002-DL-1E
BBS3002-DL-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BBS3002-TL-1E
BBS3002-TL-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BC337-25RLRAG
BC337-25RLRAG
Виробник: onsemi
Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BD135TG bd135-d.pdf
BD135TG
Виробник: onsemi
Description: TRANS NPN 45V 1.5A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.33 грн
50+39.17 грн
100+34.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BD438TG bd438-d.pdf
BD438TG
Виробник: onsemi
Description: TRANS PNP 45V 4A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
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BFL4004-1E BFL4004.pdf
BFL4004-1E
Виробник: onsemi
Description: MOSFET N-CH 800V 4.3A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
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BFL4007-1E
BFL4007-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 8.7A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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BFL4026-1E bfl4026-d.pdf
BFL4026-1E
Виробник: onsemi
Description: MOSFET N-CH 900V 3.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
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BFL4037-1E
BFL4037-1E
Виробник: onsemi
Description: MOSFET N-CH 500V 11A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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BMS3003-1E ena1907-d.pdf
BMS3003-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 78A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 39A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BMS3004-1E ena1908-d.pdf
BMS3004-1E
Виробник: onsemi
Description: MOSFET P-CH 75V 68A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
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CAT24C04C5ATR cat24c01-d.pdf
CAT24C04C5ATR
Виробник: onsemi
Description: IC EEPROM 4KBIT I2C 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-WLCSP (0.86x0.84)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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CAT24C512YIGT3JN cat24c512-d.pdf
CAT24C512YIGT3JN
Виробник: onsemi
Description: IC EEPROM 512KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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CAT25256HU4I-GT3 cat25256-d.pdf
CAT25256HU4I-GT3
Виробник: onsemi
Description: IC EEPROM 256KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+38.48 грн
Мінімальне замовлення: 3000
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CAT25M01LI-G
CAT25M01LI-G
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT25M01VI-G cat25m01-d.pdf
CAT25M01VI-G
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT25M01VI-GT3 cat25m01-d.pdf
CAT25M01VI-GT3
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+61.56 грн
Мінімальне замовлення: 3000
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CAT25M01YI-G cat25m01-d.pdf
CAT25M01YI-G
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT34TS04HU4GT4A cat34ts04-d.pdf
CAT34TS04HU4GT4A
Виробник: onsemi
Description: SENSOR DIGITAL -20C-125C 8UDFN
Packaging: Tape & Reel (TR)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 2.2V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-UDFN-EP (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
Part Status: Obsolete
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CAT34TS04VP2GT4A cat34ts04-d.pdf
CAT34TS04VP2GT4A
Виробник: onsemi
Description: SENSOR DIGITAL -20C-125C 8TDFN
Packaging: Tape & Reel (TR)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-WFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 2.2V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-TDFN (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
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CAT6241-ADJHU2MUTAG cat6241-d.pdf
CAT6241-ADJHU2MUTAG
Виробник: onsemi
Description: IC REG LINEAR POS ADJ 1A 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-UDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable
Part Status: Obsolete
PSRR: 54dB ~ 42dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.7V @ 1A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 250 µA
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CAT872-30ULGT3 cat871-d.pdf
CAT872-30ULGT3
Виробник: onsemi
Description: IC SUPERVISOR 2 CHANNEL 6ULLGA
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CAV24C128WE-GT3 cav24c128-d.pdf
CAV24C128WE-GT3
Виробник: onsemi
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CAV24C128YE-GT3 cav24c128-d.pdf
CAV24C128YE-GT3
Виробник: onsemi
Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CAV24C256WE-GT3 cav24c256-d.pdf
CAV24C256WE-GT3
Виробник: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CAV25128VE-GT3 cav25128-d.pdf
CAV25128VE-GT3
Виробник: onsemi
Description: IC EEPROM 128KBIT SPI 8SOIC
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CAX803JTBI-T3 design-resources?notFound=CAX803-D.PDF
CAX803JTBI-T3
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
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CAX803ZTBI-T3 design-resources?notFound=CAX803-D.PDF
CAX803ZTBI-T3
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
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CPH3205-M-TL-E
CPH3205-M-TL-E
Виробник: onsemi
Description: TRANS NPN 50V 3A 3-CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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CPH3350-TL-W ena0151-d.pdf
CPH3350-TL-W
Виробник: onsemi
Description: MOSFET P-CH 20V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
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CPH3910-TL-E ENA1965-D.html
CPH3910-TL-E
Виробник: onsemi
Description: JFET N-CH 25V 50MA 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
Voltage - Breakdown (V(BR)GSS): 25 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CPH
Part Status: Active
Drain to Source Voltage (Vdss): 25 V
Power - Max: 400 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V
на замовлення 447000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.76 грн
6000+9.93 грн
9000+9.64 грн
15000+8.70 грн
21000+8.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CPH6341-TL-W cph6341-d.pdf
CPH6341-TL-W
Виробник: onsemi
Description: MOSFET P-CH 30V 5A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.91 грн
6000+15.90 грн
9000+15.21 грн
15000+13.64 грн
21000+13.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CPH6350-P-TL-E
Виробник: onsemi
Description: MOSFET P-CH 30V 6A CPH6
Packaging: Tape & Reel (TR)
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CPH6350-TL-W cph6350-d.pdf
CPH6350-TL-W
Виробник: onsemi
Description: MOSFET P-CH 30V 6A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 204000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.84 грн
6000+10.66 грн
9000+10.16 грн
15000+9.00 грн
21000+8.80 грн
30000+8.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CPH6445-TL-W
CPH6445-TL-W
Виробник: onsemi
Description: MOSFET N-CH 60V 3.5A 6CPH
товару немає в наявності
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DAN222M3T5G dan222m3-d.pdf
DAN222M3T5G
Виробник: onsemi
Description: DIODE ARRAY GP 80V 100MA SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+2.22 грн
16000+2.08 грн
24000+2.02 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
DTA115TET1G dta115t-d.pdf
DTA115TET1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.22 грн
6000+1.90 грн
9000+1.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTC113EET1G dtc113e-d.pdf
DTC113EET1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.41 грн
6000+2.19 грн
9000+1.87 грн
30000+1.62 грн
75000+1.40 грн
150000+1.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTC144WET1G dtc144w-d.pdf
DTC144WET1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 100MA SC75
товару немає в наявності
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EFC6601R-TR ENA2151-D.html
EFC6601R-TR
Виробник: onsemi
Description: MOSFET 2N-CH EFCP2718
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
Part Status: Active
товару немає в наявності
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EFC6604R-A-TR
Виробник: onsemi
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Supplier Device Package: 6-EFCP (1.9x1.46)
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EFC6604R-TR efc6604r-d.pdf
Виробник: onsemi
Description: MOSFET 2N-CH 6EFCP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: 6-EFCP (1.9x1.46)
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EMH1405-P-TL-H
EMH1405-P-TL-H
Виробник: onsemi
Description: MOSFET N-CH 30V 8.5A EMH8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tj)
Supplier Device Package: 8-EMH
товару немає в наявності
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EMH2407-S-TL-H
EMH2407-S-TL-H
Виробник: onsemi
Description: MOSFET 2N-CH 20V 6A EMH8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Supplier Device Package: 8-EMH
Part Status: Obsolete
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EMI4162MUTAG EMI4162MU.pdf
EMI4162MUTAG
Виробник: onsemi
Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 8Ohm (Typ)
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EMI4163MUTAG EMI4163MU.pdf
Виробник: onsemi
Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.157" L x 0.079" W (4.00mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 8Ohm (Typ)
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EMI4182MUTAG
EMI4182MUTAG
Виробник: onsemi
Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 8Ohm (Typ)
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EMI4184MUTAG EMI4184.pdf
EMI4184MUTAG
Виробник: onsemi
Description: CMC 100MA 8LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 20-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.197" L x 0.079" W (5.00mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 8
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 8Ohm (Typ)
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ESD5382MUT5G esd5381-d.pdf
ESD5382MUT5G
Виробник: onsemi
Description: TVS DIODE 3VWM 26VC 2X3DFN
товару немає в наявності
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ESD5481MUT5G esd5481-d.pdf
ESD5481MUT5G
Виробник: onsemi
Description: TVS DIODE 5VWM 12.4VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 12.4V
Power Line Protection: No
Part Status: Active
на замовлення 1190000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.07 грн
20000+1.71 грн
30000+1.67 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ESD7181MUT5G esd7181mu-d.pdf
ESD7181MUT5G
Виробник: onsemi
Description: TVS DIODE 18.5VWM 35VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.5V
Voltage - Clamping (Max) @ Ipp: 35V (Typ)
Power Line Protection: No
Part Status: Active
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ESD7381MUT5G esd7381-d.pdf
ESD7381MUT5G
Виробник: onsemi
Description: TVS DIODE 3.3VWM 10VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.37pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+6.30 грн
20000+5.73 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ESD7481MUT5G esd7481-d.pdf
ESD7481MUT5G
Виробник: onsemi
Description: TVS DIODE 3.3VWM 12VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V (Typ)
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: No
Part Status: Active
на замовлення 220000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+8.35 грн
20000+7.71 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ESD9D5.0ST5G esd9d5.0s-d.pdf
ESD9D5.0ST5G
Виробник: onsemi
Description: TVS DIODE 5VWM 13.5VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.4V
Voltage - Clamping (Max) @ Ipp: 13.5V
Power Line Protection: No
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ESDONCAN1LT1G esdoncan1-d.pdf
ESDONCAN1LT1G
Виробник: onsemi
Description: TVS DIODE 24VWM 50VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power Line Protection: No
на замовлення 273000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.01 грн
6000+6.71 грн
9000+6.67 грн
15000+6.14 грн
21000+5.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESDR7534W1T2G esdr7534-d.pdf
ESDR7534W1T2G
Виробник: onsemi
Description: TVS DIODE 5VWM 30VC SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: Yes
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FST3125DTR2G 74fst3125.pdf
FST3125DTR2G
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
Part Status: Active
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IMD10AMT1G imd10amt1g-d.pdf
IMD10AMT1G
Виробник: onsemi
Description: TRANS NPN/PNP PREBIAS SC74R
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 285mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V
Resistor - Base (R1): 13kOhms, 130Ohms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-74R
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.65 грн
6000+8.46 грн
9000+8.04 грн
15000+7.10 грн
21000+6.84 грн
30000+6.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
LA1225MC-AH LA1225MC.pdf
LA1225MC-AH
Виробник: onsemi
Description: IC RF DETECT 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 3V
Supplier Device Package: 10-SOIC
Part Status: Obsolete
Current - Supply: 4 mA
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LA1235MC-AH
LA1235MC-AH
Виробник: onsemi
Description: IC FM IF SYSTEM TUNER MFP30SDJ
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 10-SOIC
Part Status: Obsolete
товару немає в наявності
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