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2SK4066-1E 2SK4066-1E onsemi ONSMS35711-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
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2SK4066-DL-1E 2SK4066-DL-1E onsemi ONSMS35711-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
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2SK4087LS-1E 2SK4087LS-1E onsemi Description: MOSFET N-CH 600V 9.2A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4088LS-1E 2SK4088LS-1E onsemi 2SK4088LS_May2013.pdf Description: MOSFET N-CH 650V 7.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
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2SK4099LS-1E 2SK4099LS-1E onsemi Description: MOSFET N-CH 600V 6.9A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V
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2SK4124-1E 2SK4124-1E onsemi Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4125-1E 2SK4125-1E onsemi Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4177-DL-1E 2SK4177-DL-1E onsemi ena0869-d.pdf Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK536-MTK-TB-E 2SK536-MTK-TB-E onsemi Description: MOSFET N-CH 50V 0.1A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: 3-CP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
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2SK596S-A 2SK596S-A onsemi 2SK596S_Rev_Aug2013.pdf Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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2SK596S-C 2SK596S-C onsemi Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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3LN01S-K-TL-E 3LN01S-K-TL-E onsemi Description: MOSFET N-CH 30V 0.15A SMCP
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3SK263-5-TG-E 3SK263-5-TG-E onsemi 3SK263.pdf Description: FET RF 15V 200MHZ CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 21dB
Technology: MOSFET
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Part Status: Obsolete
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
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5LN01SP 5LN01SP onsemi mosfets?documentNotFound=3&documentId=77736 Description: MOSFET N-CH 50V 100MA 3SPA
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5LP01SP 5LP01SP onsemi Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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5LP01SP-AC 5LP01SP-AC onsemi Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Tape & Reel (TR)
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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ASM811JEUSF-T ASM811JEUSF-T onsemi Description: IC SUPERVISOR 1 CHANNEL SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-143
DigiKey Programmable: Not Verified
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ASM811LEUSF-T ASM811LEUSF-T onsemi Description: IC SUPERVISOR 1 CHANNEL SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
DigiKey Programmable: Not Verified
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ATP304-TL-H ATP304-TL-H onsemi ena2192-d.pdf Description: MOSFET P-CH 60V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
3000+175.30 грн
Мінімальне замовлення: 3000
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ATP401-TL-H ATP401-TL-H onsemi ena2167-d.pdf Description: MOSFET N-CH 60V 100A ATPAK
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ATP404-H-TL-H ATP404-H-TL-H onsemi Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Supplier Device Package: ATPAK
Part Status: Obsolete
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BAS16P2T5G BAS16P2T5G onsemi bas16p2-d.pdf Description: DIODE STANDARD 100V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 248000 шт:
термін постачання 21-31 дні (днів)
8000+1.57 грн
16000+1.50 грн
Мінімальне замовлення: 8000
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BAV23CLT3G BAV23CLT3G onsemi bav23clt1-d.pdf Description: DIODE ARR GP 250V 400MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
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BBS3002-DL-1E BBS3002-DL-1E onsemi Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BBS3002-TL-1E BBS3002-TL-1E onsemi Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BC337-25RLRAG BC337-25RLRAG onsemi Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BD135TG BD135TG onsemi bd135-d.pdf Description: TRANS NPN 45V 1.5A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
4+84.52 грн
50+37.86 грн
100+33.59 грн
Мінімальне замовлення: 4
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BD438TG BD438TG onsemi bd438-d.pdf Description: TRANS PNP 45V 4A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
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BFL4004-1E BFL4004-1E onsemi BFL4004.pdf Description: MOSFET N-CH 800V 4.3A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
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BFL4007-1E BFL4007-1E onsemi Description: MOSFET N-CH 600V 8.7A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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BFL4026-1E BFL4026-1E onsemi bfl4026-d.pdf Description: MOSFET N-CH 900V 3.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
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BFL4037-1E BFL4037-1E onsemi Description: MOSFET N-CH 500V 11A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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BMS3003-1E BMS3003-1E onsemi ena1907-d.pdf Description: MOSFET P-CH 60V 78A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 39A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BMS3004-1E BMS3004-1E onsemi ena1908-d.pdf Description: MOSFET P-CH 75V 68A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
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CAT24C04C5ATR CAT24C04C5ATR onsemi cat24c01-d.pdf Description: IC EEPROM 4KBIT I2C 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-WLCSP (0.86x0.84)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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CAT24C512YIGT3JN CAT24C512YIGT3JN onsemi cat24c512-d.pdf Description: IC EEPROM 512KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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CAT25256HU4I-GT3 CAT25256HU4I-GT3 onsemi cat25256-d.pdf Description: IC EEPROM 256KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+37.19 грн
6000+34.92 грн
Мінімальне замовлення: 3000
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CAT25M01LI-G CAT25M01LI-G onsemi Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT25M01VI-G CAT25M01VI-G onsemi cat25m01-d.pdf Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT25M01VI-GT3 CAT25M01VI-GT3 onsemi cat25m01-d.pdf Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Verified
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CAT25M01YI-G CAT25M01YI-G onsemi cat25m01-d.pdf Description: IC EEPROM 1MBIT SPI 10MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT34TS04HU4GT4A CAT34TS04HU4GT4A onsemi cat34ts04-d.pdf Description: SENSOR DIGITAL -20C-125C 8UDFN
Packaging: Tape & Reel (TR)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 2.2V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-UDFN-EP (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
Part Status: Obsolete
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CAT34TS04VP2GT4A CAT34TS04VP2GT4A onsemi cat34ts04-d.pdf Description: SENSOR DIGITAL -20C-125C 8TDFN
Packaging: Tape & Reel (TR)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-WFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 2.2V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-TDFN (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
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CAT6241-ADJHU2MUTAG CAT6241-ADJHU2MUTAG onsemi cat6241-d.pdf Description: IC REG LINEAR POS ADJ 1A 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-UDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable
Part Status: Obsolete
PSRR: 54dB ~ 42dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.7V @ 1A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 250 µA
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CAT872-30ULGT3 CAT872-30ULGT3 onsemi cat871-d.pdf Description: IC SUPERVISOR 2 CHANNEL 6ULLGA
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CAV24C128WE-GT3 CAV24C128WE-GT3 onsemi cav24c128-d.pdf Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CAV24C128YE-GT3 CAV24C128YE-GT3 onsemi cav24c128-d.pdf Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CAV24C256WE-GT3 CAV24C256WE-GT3 onsemi cav24c256-d.pdf Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CAV25128VE-GT3 CAV25128VE-GT3 onsemi cav25128-d.pdf Description: IC EEPROM 128KBIT SPI 8SOIC
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CAX803JTBI-T3 CAX803JTBI-T3 onsemi design-resources?notFound=CAX803-D.PDF Description: IC SUPERVISOR 1 CHANNEL SOT23-3
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CAX803ZTBI-T3 CAX803ZTBI-T3 onsemi design-resources?notFound=CAX803-D.PDF Description: IC SUPERVISOR 1 CHANNEL SOT23-3
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CPH3205-M-TL-E CPH3205-M-TL-E onsemi Description: TRANS NPN 50V 3A 3-CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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CPH3350-TL-W CPH3350-TL-W onsemi ena0151-d.pdf Description: MOSFET P-CH 20V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
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CPH3910-TL-E CPH3910-TL-E onsemi ENA1965-D.html Description: JFET N-CH 25V 50MA 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
Voltage - Breakdown (V(BR)GSS): 25 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CPH
Part Status: Active
Drain to Source Voltage (Vdss): 25 V
Power - Max: 400 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V
на замовлення 438000 шт:
термін постачання 21-31 дні (днів)
3000+10.18 грн
6000+9.38 грн
9000+8.90 грн
15000+8.12 грн
21000+7.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CPH6341-TL-W CPH6341-TL-W onsemi cph6341-d.pdf Description: MOSFET P-CH 30V 5A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
3000+18.16 грн
6000+16.12 грн
9000+15.42 грн
15000+13.83 грн
21000+13.40 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CPH6350-P-TL-E onsemi Description: MOSFET P-CH 30V 6A CPH6
Packaging: Tape & Reel (TR)
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CPH6350-TL-W CPH6350-TL-W onsemi cph6350-d.pdf Description: MOSFET P-CH 30V 6A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 204000 шт:
термін постачання 21-31 дні (днів)
3000+12.01 грн
6000+10.81 грн
9000+10.30 грн
15000+9.13 грн
21000+8.92 грн
30000+8.34 грн
Мінімальне замовлення: 3000
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CPH6445-TL-W CPH6445-TL-W onsemi Description: MOSFET N-CH 60V 3.5A 6CPH
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DAN222M3T5G DAN222M3T5G onsemi dan222m3-d.pdf Description: DIODE ARRAY GP 80V 100MA SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
8000+2.25 грн
16000+2.11 грн
24000+2.04 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
DTA115TET1G DTA115TET1G onsemi dta115t-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+2.25 грн
6000+1.92 грн
9000+1.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SK4066-1E ONSMS35711-1.pdf?t.download=true&u=5oefqw
2SK4066-1E
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
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2SK4066-DL-1E ONSMS35711-1.pdf?t.download=true&u=5oefqw
2SK4066-DL-1E
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
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2SK4087LS-1E
2SK4087LS-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 9.2A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4088LS-1E 2SK4088LS_May2013.pdf
2SK4088LS-1E
Виробник: onsemi
Description: MOSFET N-CH 650V 7.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
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2SK4099LS-1E
2SK4099LS-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 6.9A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V
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2SK4124-1E
2SK4124-1E
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4125-1E
2SK4125-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4177-DL-1E ena0869-d.pdf
2SK4177-DL-1E
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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2SK536-MTK-TB-E
2SK536-MTK-TB-E
Виробник: onsemi
Description: MOSFET N-CH 50V 0.1A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: 3-CP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
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2SK596S-A 2SK596S_Rev_Aug2013.pdf
2SK596S-A
Виробник: onsemi
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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2SK596S-C
2SK596S-C
Виробник: onsemi
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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3LN01S-K-TL-E
3LN01S-K-TL-E
Виробник: onsemi
Description: MOSFET N-CH 30V 0.15A SMCP
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3SK263-5-TG-E 3SK263.pdf
3SK263-5-TG-E
Виробник: onsemi
Description: FET RF 15V 200MHZ CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 21dB
Technology: MOSFET
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Part Status: Obsolete
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
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5LN01SP mosfets?documentNotFound=3&documentId=77736
5LN01SP
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3SPA
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5LP01SP
5LP01SP
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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5LP01SP-AC
5LP01SP-AC
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Tape & Reel (TR)
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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ASM811JEUSF-T
ASM811JEUSF-T
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-143
DigiKey Programmable: Not Verified
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ASM811LEUSF-T
ASM811LEUSF-T
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
DigiKey Programmable: Not Verified
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ATP304-TL-H ena2192-d.pdf
ATP304-TL-H
Виробник: onsemi
Description: MOSFET P-CH 60V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+175.30 грн
Мінімальне замовлення: 3000
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ATP401-TL-H ena2167-d.pdf
ATP401-TL-H
Виробник: onsemi
Description: MOSFET N-CH 60V 100A ATPAK
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ATP404-H-TL-H
ATP404-H-TL-H
Виробник: onsemi
Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Supplier Device Package: ATPAK
Part Status: Obsolete
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BAS16P2T5G bas16p2-d.pdf
BAS16P2T5G
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 248000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+1.57 грн
16000+1.50 грн
Мінімальне замовлення: 8000
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BAV23CLT3G bav23clt1-d.pdf
BAV23CLT3G
Виробник: onsemi
Description: DIODE ARR GP 250V 400MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
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BBS3002-DL-1E
BBS3002-DL-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BBS3002-TL-1E
BBS3002-TL-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BC337-25RLRAG
BC337-25RLRAG
Виробник: onsemi
Description: TRANS NPN 45V 0.8A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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BD135TG bd135-d.pdf
BD135TG
Виробник: onsemi
Description: TRANS NPN 45V 1.5A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+84.52 грн
50+37.86 грн
100+33.59 грн
Мінімальне замовлення: 4
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BD438TG bd438-d.pdf
BD438TG
Виробник: onsemi
Description: TRANS PNP 45V 4A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
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BFL4004-1E BFL4004.pdf
BFL4004-1E
Виробник: onsemi
Description: MOSFET N-CH 800V 4.3A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
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BFL4007-1E
BFL4007-1E
Виробник: onsemi
Description: MOSFET N-CH 600V 8.7A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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BFL4026-1E bfl4026-d.pdf
BFL4026-1E
Виробник: onsemi
Description: MOSFET N-CH 900V 3.5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
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BFL4037-1E
BFL4037-1E
Виробник: onsemi
Description: MOSFET N-CH 500V 11A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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BMS3003-1E ena1907-d.pdf
BMS3003-1E
Виробник: onsemi
Description: MOSFET P-CH 60V 78A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 39A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
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BMS3004-1E ena1908-d.pdf
BMS3004-1E
Виробник: onsemi
Description: MOSFET P-CH 75V 68A TO220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
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CAT24C04C5ATR cat24c01-d.pdf
CAT24C04C5ATR
Виробник: onsemi
Description: IC EEPROM 4KBIT I2C 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-WLCSP (0.86x0.84)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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CAT24C512YIGT3JN cat24c512-d.pdf
CAT24C512YIGT3JN
Виробник: onsemi
Description: IC EEPROM 512KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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CAT25256HU4I-GT3 cat25256-d.pdf
CAT25256HU4I-GT3
Виробник: onsemi
Description: IC EEPROM 256KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+37.19 грн
6000+34.92 грн
Мінімальне замовлення: 3000
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CAT25M01LI-G
CAT25M01LI-G
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT25M01VI-G cat25m01-d.pdf
CAT25M01VI-G
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT25M01VI-GT3 cat25m01-d.pdf
CAT25M01VI-GT3
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Verified
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CAT25M01YI-G cat25m01-d.pdf
CAT25M01YI-G
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CAT34TS04HU4GT4A cat34ts04-d.pdf
CAT34TS04HU4GT4A
Виробник: onsemi
Description: SENSOR DIGITAL -20C-125C 8UDFN
Packaging: Tape & Reel (TR)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 2.2V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-UDFN-EP (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
Part Status: Obsolete
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CAT34TS04VP2GT4A cat34ts04-d.pdf
CAT34TS04VP2GT4A
Виробник: onsemi
Description: SENSOR DIGITAL -20C-125C 8TDFN
Packaging: Tape & Reel (TR)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-WFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 2.2V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-TDFN (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
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CAT6241-ADJHU2MUTAG cat6241-d.pdf
CAT6241-ADJHU2MUTAG
Виробник: onsemi
Description: IC REG LINEAR POS ADJ 1A 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-UDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable
Part Status: Obsolete
PSRR: 54dB ~ 42dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.7V @ 1A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 250 µA
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CAT872-30ULGT3 cat871-d.pdf
CAT872-30ULGT3
Виробник: onsemi
Description: IC SUPERVISOR 2 CHANNEL 6ULLGA
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CAV24C128WE-GT3 cav24c128-d.pdf
CAV24C128WE-GT3
Виробник: onsemi
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CAV24C128YE-GT3 cav24c128-d.pdf
CAV24C128YE-GT3
Виробник: onsemi
Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CAV24C256WE-GT3 cav24c256-d.pdf
CAV24C256WE-GT3
Виробник: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CAV25128VE-GT3 cav25128-d.pdf
CAV25128VE-GT3
Виробник: onsemi
Description: IC EEPROM 128KBIT SPI 8SOIC
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CAX803JTBI-T3 design-resources?notFound=CAX803-D.PDF
CAX803JTBI-T3
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
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CAX803ZTBI-T3 design-resources?notFound=CAX803-D.PDF
CAX803ZTBI-T3
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
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CPH3205-M-TL-E
CPH3205-M-TL-E
Виробник: onsemi
Description: TRANS NPN 50V 3A 3-CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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CPH3350-TL-W ena0151-d.pdf
CPH3350-TL-W
Виробник: onsemi
Description: MOSFET P-CH 20V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
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CPH3910-TL-E ENA1965-D.html
CPH3910-TL-E
Виробник: onsemi
Description: JFET N-CH 25V 50MA 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
Voltage - Breakdown (V(BR)GSS): 25 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CPH
Part Status: Active
Drain to Source Voltage (Vdss): 25 V
Power - Max: 400 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V
на замовлення 438000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.18 грн
6000+9.38 грн
9000+8.90 грн
15000+8.12 грн
21000+7.91 грн
Мінімальне замовлення: 3000
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CPH6341-TL-W cph6341-d.pdf
CPH6341-TL-W
Виробник: onsemi
Description: MOSFET P-CH 30V 5A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.16 грн
6000+16.12 грн
9000+15.42 грн
15000+13.83 грн
21000+13.40 грн
Мінімальне замовлення: 3000
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CPH6350-P-TL-E
Виробник: onsemi
Description: MOSFET P-CH 30V 6A CPH6
Packaging: Tape & Reel (TR)
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CPH6350-TL-W cph6350-d.pdf
CPH6350-TL-W
Виробник: onsemi
Description: MOSFET P-CH 30V 6A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 204000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.01 грн
6000+10.81 грн
9000+10.30 грн
15000+9.13 грн
21000+8.92 грн
30000+8.34 грн
Мінімальне замовлення: 3000
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CPH6445-TL-W
CPH6445-TL-W
Виробник: onsemi
Description: MOSFET N-CH 60V 3.5A 6CPH
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DAN222M3T5G dan222m3-d.pdf
DAN222M3T5G
Виробник: onsemi
Description: DIODE ARRAY GP 80V 100MA SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+2.25 грн
16000+2.11 грн
24000+2.04 грн
Мінімальне замовлення: 8000
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DTA115TET1G dta115t-d.pdf
DTA115TET1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.25 грн
6000+1.92 грн
9000+1.80 грн
Мінімальне замовлення: 3000
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