| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NGTB50N60FLWG | onsemi |
 Description: IGBT TRENCH FS 600V 100A TO-247Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Reverse Recovery Time (trr): 85 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 223 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Obsolete Gate Charge: 310 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 1.1mJ (on), 600µJ (off) Td (on/off) @ 25°C: 116ns/292ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NGTB50N60L2WG | onsemi |
Description: IGBT TRENCH FS 600V 100A TO-247 Power - Max: 500 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Gate Charge: 310 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 800µJ (on), 600µJ (off) Td (on/off) @ 25°C: 110ns/270ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Reverse Recovery Time (trr): 67 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NGTB75N60FL2WG | onsemi |
Description: IGBT TRENCH FS 600V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 595 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NGTB75N65FL2WG | onsemi |
Description: IGBT TRENCH FS 650V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 595 W |
на замовлення 320 шт: термін постачання 21-31 дні (днів) |
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NGTG50N60FLWG | onsemi |
Description: IGBT TRENCH 600V 100A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Td (on/off) @ 25°C: 116ns/292ns Switching Energy: 1.1mJ (on), 600µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 223 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NHPJ08S600G | onsemi |
Description: DIODE GP 600V 8A TO220-2FP Current - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NHPJ15S600G | onsemi |
Description: DIODE GP 600V 15A TO220-2FP Package / Case: TO-220-2 Full Pack Packaging: Tube Current - Reverse Leakage @ Vr: 60 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NHPV08S600G | onsemi |
Description: DIODE GEN PURP 600V 8A TO220-2 Current - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 489 шт: термін постачання 21-31 дні (днів) |
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NHPV15S600G | onsemi |
Description: DIODE GEN PURP 600V 15A TO220-2 Current - Reverse Leakage @ Vr: 60 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NIS5232MN1TXG | onsemi |
Description: IC ELECTRONIC FUSE 10DFN Part Status: Not For New Designs Supplier Device Package: 10-DFN (3x3) Operating Temperature: -40°C ~ 150°C Current - Output: 4.2A Voltage - Input: 9V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount Sensing Method: High-Side Package / Case: 10-VFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NJVMJD112G | onsemi |
Description: TRANS NPN DARL 100V 2A DPAK Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: DPAK Frequency - Transition: 25MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
на замовлення 6246 шт: термін постачання 21-31 дні (днів) |
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NJVMJD3055T4G | onsemi |
Description: TRANS NPN 60V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
на замовлення 62500 шт: термін постачання 21-31 дні (днів) |
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NJVMJD31CG | onsemi |
Description: TRANS NPN 100V 3A DPAK Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: DPAK Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Current - Collector Cutoff (Max): 50µA Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
на замовлення 775 шт: термін постачання 21-31 дні (днів) |
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NJW44H11G | onsemi |
Description: TRANS NPN 80V 10A TO-3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V Frequency - Transition: 85MHz Supplier Device Package: TO-3P-3L Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 120 W |
на замовлення 168 шт: термін постачання 21-31 дні (днів) |
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NL17SH02P5T5G | onsemi |
Description: IC GATE NOR 1CH 2-INP SOT953 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Supplier Device Package: SOT-953 Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NOR Gate Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NL17SH34P5T5G | onsemi |
Description: IC BUF NON-INVERT 5.5V SOT953 Supplier Device Package: SOT-953 Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: SOT-953 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NL17SZ02P5T5G | onsemi |
Description: IC GATE NOR 1CH 2-INP SOT953 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Part Status: Obsolete Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Supplier Device Package: SOT-953 Number of Inputs: 2 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 125°C Logic Type: NOR Gate |
на замовлення 144000 шт: термін постачання 21-31 дні (днів) |
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NL17SZ07P5T5G | onsemi |
Description: IC BUFF NON-INVERT 5.5V SOT-953 Output Type: Open Drain Part Status: Obsolete Supplier Device Package: SOT-953 Current - Output High, Low: -, 24mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Tape & Reel (TR) |
на замовлення 160000 шт: термін постачання 21-31 дні (днів) |
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NL17SZ08P5T5G | onsemi |
Description: IC GATE AND 1CH 2-INP SOT953 Packaging: Tape & Reel (TR) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-953 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 56000 шт: термін постачання 21-31 дні (днів) |
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NL17SZ14P5T5G | onsemi |
Description: IC INVERT SCHMITT 1CH 1IN SOT953 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF Input Logic Level - Low: 0.2V ~ 1.2V Input Logic Level - High: 1.4V ~ 3.6V Supplier Device Package: SOT-953 Number of Inputs: 1 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: SOT-953 Features: Schmitt Trigger Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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NL17SZ32P5T5G | onsemi |
Description: IC GATE OR 1CH 2-INP SOT953 Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Supplier Device Package: SOT-953 Number of Inputs: 2 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Tape & Reel (TR) Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLSV4T240EDR2G | onsemi |
Description: IC TRNSLTR UNIDIRECTIONAL 14SOIC Number of Circuits: 1 Part Status: Active Voltage - VCCB: 0.9 V ~ 4.5 V Voltage - VCCA: 0.9 V ~ 4.5 V Channels per Circuit: 4 Translator Type: Voltage Level Channel Type: Unidirectional Supplier Device Package: 14-SOIC Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Output Type: Tri-State, Inverted Package / Case: 14-SOIC (0.154", 3.90mm Width) Features: Over Voltage Protection, Power-Off Protection Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NLSX0102FCT1G | onsemi |
Description: IC XLTR VL BIDIR 8-FLIPCHIP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-XFBGA, FCBGA Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 24Mbps Supplier Device Package: 8-FlipChip Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.5 V ~ 5.5 V Voltage - VCCB: 1.5 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLSX0102FCT2G | onsemi |
Description: IC XLTR VL BIDIR 8-FLIPCHIP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-XFBGA, FCBGA Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 24Mbps Supplier Device Package: 8-FlipChip Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.5 V ~ 5.5 V Voltage - VCCB: 1.5 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLSX4302EBMUTCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UQFN Packaging: Tape & Reel (TR) Number of Circuits: 1 Part Status: Active Voltage - VCCB: 1.5 V ~ 5.5 V Voltage - VCCA: 1.5 V ~ 5.5 V Channels per Circuit: 2 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 8-UQFN (1.4x1.2) Data Rate: 20Mbps Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 8-UFQFN Features: Auto-Direction Sensing |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NLV74HC238ADTR2G | onsemi |
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NLVVHC1G132DFT2G | onsemi |
Description: IC GATE NAND 1CH 2-INP SC88A Features: Schmitt Trigger Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Current - Quiescent (Max): 1 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Input Logic Level - Low: 0.65V ~ 1.45V Input Logic Level - High: 2.25V ~ 3.7V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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NLVVHC1G132DTT1G | onsemi |
Description: IC GATE NAND 1CH 2-INP 5TSOP Qualification: AEC-Q100 Grade: Automotive Current - Quiescent (Max): 1 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Input Logic Level - Low: 0.65V ~ 1.45V Input Logic Level - High: 2.25V ~ 3.7V Supplier Device Package: 5-TSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Features: Schmitt Trigger Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NLVVHC1G86DTT1G | onsemi |
Description: IC GATE XOR 1CH 2-INP 5TSOP Qualification: AEC-Q100 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Grade: Automotive Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Input Logic Level - Low: 0.5V ~ 1.65V Input Logic Level - High: 1.5V ~ 3.85V Supplier Device Package: 5-TSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVB10100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 10A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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NRVB10100MFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 10A 5DFN Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NRVB1045MFST1G | onsemi |
Description: DIODE SCHOTTKY 45V 10A 5DFN Current - Reverse Leakage @ Vr: 500 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVB440MFST3G | onsemi |
Description: DIODE SCHOTTKY 40V 4A 5DFN Current - Reverse Leakage @ Vr: 800 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NRVB440MFSWFT1G | onsemi |
Description: DIODE SCHOTTKY 40V 4A 5DFN Current - Reverse Leakage @ Vr: 800 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| NRVB440MFSWFT3G | onsemi |
Description: DIODE SCHOTTKY 40V 4A 5DFN Current - Reverse Leakage @ Vr: 800 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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NRVB5100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 5A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NRVB540MFST1G | onsemi |
Description: DIODE SCHOTTKY 40V 5A 5DFN Current - Reverse Leakage @ Vr: 2 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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NRVB8H100MFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 8A 5DFN Current - Reverse Leakage @ Vr: 2 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBB2535CTLG | onsemi |
Description: DIODE ARR SCHOTT 35V 12.5A D2PAK Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 12.5 A Voltage - DC Reverse (Vr) (Max): 35 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 12.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | ||||||||||||||
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NRVBB2535CTLT4G | onsemi |
Description: DIODE ARR SCHOTT 35V 12.5A D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 12.5 A Voltage - DC Reverse (Vr) (Max): 35 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 12.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBB41H100CTT4G | onsemi |
Description: DIODE ARRAY GP 100V 20A D2PAK Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 40 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBM120ET3G | onsemi |
Description: DIODE SCHOTTKY 20V 1A POWERMITE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBM120LT3G | onsemi |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||
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NRVBM130LT3G | onsemi |
Description: DIODE SCHOTTKY 30V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||
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NRVBS260T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBSS24T3G | onsemi |
Description: DIODE SCHOTTKY 40V 2A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBA113EDXV6T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.25W SOT563 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhms Resistor - Emitter Base (R2): 1kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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NSBA123EF3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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NSBA124XDXV6T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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NSBA144TF3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms Resistors Included: R1 Only |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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NSBC113EPDXV6T1G | onsemi |
Description: TRANS PREBIAS NPN/PNP SOT563 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 1kOhm Resistor - Base (R1): 1kOhm DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
на замовлення 112000 шт: термін постачання 21-31 дні (днів) |
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NSBC123EF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 254 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-1123 DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBC143TF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-1123 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Tape & Reel (TR) Resistor - Base (R1): 4.7 kOhms Power - Max: 254 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBC143ZDXV6T5G | onsemi |
Description: TRANS 2NPN PREBIAS 0.5W SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBC144TF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Resistor - Base (R1): 47 kOhms Power - Max: 254 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-1123 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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NSBC144WDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0115CQP6T5G | onsemi |
Description: DIODE ARR SCHOT 15V 100MA SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-963 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA Current - Reverse Leakage @ Vr: 15 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR01F30MXT5G | onsemi |
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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NSR0240V2T5G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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NSR20F40NXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 2A 2DSN Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: 2-DSN (1.6x0.8), (0603) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
на замовлення 185000 шт: термін постачання 21-31 дні (днів) |
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| NGTB50N60FLWG |
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Виробник: onsemi
Description: IGBT TRENCH FS 600V 100A TO-247
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 85 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 223 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Gate Charge: 310 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.1mJ (on), 600µJ (off)
Td (on/off) @ 25°C: 116ns/292ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Description: IGBT TRENCH FS 600V 100A TO-247
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 85 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 223 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Gate Charge: 310 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.1mJ (on), 600µJ (off)
Td (on/off) @ 25°C: 116ns/292ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
товару немає в наявності
В кошику
од. на суму грн.
| NGTB50N60L2WG |
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Виробник: onsemi
Description: IGBT TRENCH FS 600V 100A TO-247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 310 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 800µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 110ns/270ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 600V 100A TO-247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 310 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 800µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 110ns/270ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| NGTB75N60FL2WG |
|
Виробник: onsemi
Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
товару немає в наявності
В кошику
од. на суму грн.
| NGTB75N65FL2WG |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 672.62 грн |
| 30+ | 382.61 грн |
| 120+ | 324.50 грн |
| NGTG50N60FLWG |
|
Виробник: onsemi
Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
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| NHPJ08S600G |
|
Виробник: onsemi
Description: DIODE GP 600V 8A TO220-2FP
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE GP 600V 8A TO220-2FP
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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| NHPJ15S600G |
|
Виробник: onsemi
Description: DIODE GP 600V 15A TO220-2FP
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Description: DIODE GP 600V 15A TO220-2FP
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
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| NHPV08S600G |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 600V 8A TO220-2
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.99 грн |
| 10+ | 106.71 грн |
| 25+ | 101.31 грн |
| 100+ | 73.00 грн |
| 250+ | 64.52 грн |
| NHPV15S600G |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 15A TO220-2
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Description: DIODE GEN PURP 600V 15A TO220-2
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
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| NIS5232MN1TXG |
|
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Part Status: Not For New Designs
Supplier Device Package: 10-DFN (3x3)
Operating Temperature: -40°C ~ 150°C
Current - Output: 4.2A
Voltage - Input: 9V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC ELECTRONIC FUSE 10DFN
Part Status: Not For New Designs
Supplier Device Package: 10-DFN (3x3)
Operating Temperature: -40°C ~ 150°C
Current - Output: 4.2A
Voltage - Input: 9V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
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| NJVMJD112G |
|
Виробник: onsemi
Description: TRANS NPN DARL 100V 2A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 25MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: TRANS NPN DARL 100V 2A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 25MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
на замовлення 6246 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.17 грн |
| 75+ | 31.02 грн |
| 150+ | 27.59 грн |
| 525+ | 21.30 грн |
| 1050+ | 19.31 грн |
| 2025+ | 17.71 грн |
| 5025+ | 15.64 грн |
| NJVMJD3055T4G |
|
Виробник: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
на замовлення 62500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 28.84 грн |
| 5000+ | 25.79 грн |
| 7500+ | 24.78 грн |
| 12500+ | 23.12 грн |
| NJVMJD31CG |
|
Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: TRANS NPN 100V 3A DPAK
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
на замовлення 775 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 29.03 грн |
| 150+ | 24.83 грн |
| NJW44H11G |
|
Виробник: onsemi
Description: TRANS NPN 80V 10A TO-3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V
Frequency - Transition: 85MHz
Supplier Device Package: TO-3P-3L
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 120 W
Description: TRANS NPN 80V 10A TO-3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V
Frequency - Transition: 85MHz
Supplier Device Package: TO-3P-3L
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 120 W
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 251.84 грн |
| 30+ | 132.50 грн |
| 120+ | 108.25 грн |
| NL17SH02P5T5G |
|
Виробник: onsemi
Description: IC GATE NOR 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Description: IC GATE NOR 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
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| NL17SH34P5T5G |
|
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V SOT953
Supplier Device Package: SOT-953
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Description: IC BUF NON-INVERT 5.5V SOT953
Supplier Device Package: SOT-953
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
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| NL17SZ02P5T5G |
|
Виробник: onsemi
Description: IC GATE NOR 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 125°C
Logic Type: NOR Gate
Description: IC GATE NOR 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 125°C
Logic Type: NOR Gate
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 3.94 грн |
| 16000+ | 3.43 грн |
| 24000+ | 3.24 грн |
| 40000+ | 2.85 грн |
| 56000+ | 2.73 грн |
| 80000+ | 2.62 грн |
| NL17SZ07P5T5G |
|
Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V SOT-953
Output Type: Open Drain
Part Status: Obsolete
Supplier Device Package: SOT-953
Current - Output High, Low: -, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Description: IC BUFF NON-INVERT 5.5V SOT-953
Output Type: Open Drain
Part Status: Obsolete
Supplier Device Package: SOT-953
Current - Output High, Low: -, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 3.54 грн |
| 16000+ | 3.08 грн |
| 24000+ | 2.92 грн |
| 40000+ | 2.56 грн |
| 56000+ | 2.46 грн |
| 80000+ | 2.36 грн |
| NL17SZ08P5T5G |
|
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.89 грн |
| NL17SZ14P5T5G |
|
Виробник: onsemi
Description: IC INVERT SCHMITT 1CH 1IN SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Input Logic Level - Low: 0.2V ~ 1.2V
Input Logic Level - High: 1.4V ~ 3.6V
Supplier Device Package: SOT-953
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SOT-953
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Description: IC INVERT SCHMITT 1CH 1IN SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Input Logic Level - Low: 0.2V ~ 1.2V
Input Logic Level - High: 1.4V ~ 3.6V
Supplier Device Package: SOT-953
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SOT-953
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| NL17SZ32P5T5G |
|
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP SOT953
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP SOT953
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
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| NLSV4T240EDR2G |
|
Виробник: onsemi
Description: IC TRNSLTR UNIDIRECTIONAL 14SOIC
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 4
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 14-SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Inverted
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Over Voltage Protection, Power-Off Protection
Packaging: Tape & Reel (TR)
Description: IC TRNSLTR UNIDIRECTIONAL 14SOIC
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 4
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 14-SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Inverted
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Over Voltage Protection, Power-Off Protection
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
В кошику
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| NLSX0102FCT1G |
|
Виробник: onsemi
Description: IC XLTR VL BIDIR 8-FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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В кошику
од. на суму грн.
| NLSX0102FCT2G |
|
Виробник: onsemi
Description: IC XLTR VL BIDIR 8-FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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| NLSX4302EBMUTCG |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.5 V ~ 5.5 V
Voltage - VCCA: 1.5 V ~ 5.5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UQFN (1.4x1.2)
Data Rate: 20Mbps
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-UFQFN
Features: Auto-Direction Sensing
Description: IC TRANSLTR BIDIRECTIONAL 8UQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.5 V ~ 5.5 V
Voltage - VCCA: 1.5 V ~ 5.5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UQFN (1.4x1.2)
Data Rate: 20Mbps
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-UFQFN
Features: Auto-Direction Sensing
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NLV74HC238ADTR2G |
|
Виробник: onsemi
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
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Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NLVVHC1G132DFT2G |
|
Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Description: IC GATE NAND 1CH 2-INP SC88A
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
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Мінімальне замовлення: 6000 шт
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| NLVVHC1G132DTT1G |
|
Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NLVVHC1G86DTT1G |
|
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 1.65V
Input Logic Level - High: 1.5V ~ 3.85V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Description: IC GATE XOR 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 1.65V
Input Logic Level - High: 1.5V ~ 3.85V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
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| NRVB10100MFST1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 27.85 грн |
| 3000+ | 24.72 грн |
| NRVB10100MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Description: DIODE SCHOTTKY 100V 10A 5DFN
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NRVB1045MFST1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 10A 5DFN
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 45V 10A 5DFN
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| NRVB440MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| NRVB440MFSWFT1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 18.83 грн |
| NRVB440MFSWFT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 15.89 грн |
| 10000+ | 14.74 грн |
| 25000+ | 14.17 грн |
| NRVB5100MFST1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 18.76 грн |
| 3000+ | 16.54 грн |
| NRVB540MFST1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 5A 5DFN
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 5A 5DFN
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 16.21 грн |
| 3000+ | 14.25 грн |
| NRVB8H100MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 8A 5DFN
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 8A 5DFN
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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од. на суму грн.
| NRVBB2535CTLG |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 35V 12.5A D2PAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: DIODE ARR SCHOTT 35V 12.5A D2PAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Мінімальне замовлення: 150 шт
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| NRVBB2535CTLT4G |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 35V 12.5A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE ARR SCHOTT 35V 12.5A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 12.5 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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| NRVBB41H100CTT4G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 100V 20A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 100V 20A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| NRVBM120ET3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Description: DIODE SCHOTTKY 20V 1A POWERMITE
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| NRVBM120LT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 10 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 10 V
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Мінімальне замовлення: 12000 шт
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| NRVBM130LT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
Description: DIODE SCHOTTKY 30V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
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Мінімальне замовлення: 12000 шт
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од. на суму грн.
| NRVBS260T3G-VF01 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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| NRVBSS24T3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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| NSBA113EDXV6T1G |
|
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT563
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: TRANS 2PNP PREBIAS 0.25W SOT563
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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Мінімальне замовлення: 4000 шт
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| NSBA123EF3T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
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Мінімальне замовлення: 8000 шт
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од. на суму грн.
| NSBA124XDXV6T1G |
|
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Description: TRANS 2PNP PREBIAS 0.5W SOT563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NSBA144TF3T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
товару немає в наявності
Мінімальне замовлення: 8000 шт
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| NSBC113EPDXV6T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 1kOhm
Resistor - Base (R1): 1kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN/PNP SOT563
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 1kOhm
Resistor - Base (R1): 1kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 7.05 грн |
| 8000+ | 6.25 грн |
| 12000+ | 5.97 грн |
| 20000+ | 5.31 грн |
| 28000+ | 5.13 грн |
| 40000+ | 5.03 грн |
| NSBC123EF3T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
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| NSBC143TF3T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Power - Max: 254 mW
Description: TRANS PREBIAS NPN 50V SOT1123
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Power - Max: 254 mW
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| NSBC143ZDXV6T5G |
|
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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| NSBC144TF3T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Base (R1): 47 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Base (R1): 47 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
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од. на суму грн.
| NSBC144WDXV6T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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| NSR0115CQP6T5G |
|
Виробник: onsemi
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| NSR01F30MXT5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NSR0240V2T5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| NSR20F40NXT5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8), (0603)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8), (0603)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 185000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 10.15 грн |
| 10000+ | 9.38 грн |
| 15000+ | 7.13 грн |
| 35000+ | 6.47 грн |
| 50000+ | 6.31 грн |