| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NRVHP120SFT3G | onsemi |
Description: DIODE STANDARD 200V 1A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7665 шт: термін постачання 21-31 дні (днів) |
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NRVHPM220T3G | onsemi |
Description: DIODE STANDARD 200V 2A POWERMITEPackaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 22330 шт: термін постачання 21-31 дні (днів) |
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NRVTS245ESFT3G | onsemi |
Description: DIODE SCHOTTKY 45V 2A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 75 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 37335 шт: термін постачання 21-31 дні (днів) |
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NRVTS260ESFT3G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 12 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVTSA3100ET3G | onsemi |
Description: DIODE SCHOTTKY 100V 3A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 14.3pF @ 100V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 995 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVTSA4100T3G | onsemi |
Description: DIODE SCHOTTKY 100V 4A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 54.7pF @ 100V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 4 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVUS220VT3G | onsemi |
Description: DIODE STANDARD 200V 2A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2648 шт: термін постачання 21-31 дні (днів) |
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NRVUS230T3G | onsemi |
Description: DIODE GEN PURP 300V 2A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NS5A4684SMNTBG | onsemi |
Description: IC SWITCH SPDTX2 400MOHM 10WQFNPackaging: Cut Tape (CT) Package / Case: 10-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 400mOhm -3db Bandwidth: 19MHz Supplier Device Package: 10-WQFN (1.4x1.8) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 38pC Crosstalk: -70dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm (Max) Switch Time (Ton, Toff) (Max): 50ns, 30ns Channel Capacitance (CS(off), CD(off)): 60pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 2 |
на замовлення 39156 шт: термін постачання 21-31 дні (днів) |
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NSBC114EDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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NSBC114EF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 92088 шт: термін постачання 21-31 дні (днів) |
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NSBC114EPDP6T5G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 674 шт: термін постачання 21-31 дні (днів) |
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NSBC114YDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 |
на замовлення 122126 шт: термін постачання 21-31 дні (днів) |
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NSBC114YF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 13728 шт: термін постачання 21-31 дні (днів) |
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NSBC114YPDP6T5G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 371274 шт: термін постачання 21-31 дні (днів) |
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NSBC124XDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
на замовлення 1945 шт: термін постачання 21-31 дні (днів) |
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NSBC143ZDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 1864 шт: термін постачання 21-31 дні (днів) |
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NSI45025ZT1G | onsemi |
Description: IC CURRENT REGULATOR 15% SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 25mA Accuracy: ±15% Operating Temperature: -40°C ~ 125°C Supplier Device Package: SOT-223 (TO-261) Part Status: Active |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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NSI45030ZT1G | onsemi |
Description: IC CURRENT REGULATOR 15% SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 30mA Accuracy: ±15% Operating Temperature: -40°C ~ 125°C Supplier Device Package: SOT-223 (TO-261) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0115CQP6T5G | onsemi |
Description: DIODE ARR SCHOT 15V 100MA SOT963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-963 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA Current - Reverse Leakage @ Vr: 15 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0170HT1G | onsemi |
Description: DIODE SCHOTTKY 70V 70MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 70mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA Current - Reverse Leakage @ Vr: 3 µA @ 70 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR01L30P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 100MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0240V2T5G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 9459 шт: термін постачання 21-31 дні (днів) |
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NSR02F30MXT5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA 2X3DFNPackaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSS40300DDR2G | onsemi |
Description: TRANS 2PNP DUAL 40V 3A 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 14697 шт: термін постачання 21-31 дні (днів) |
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NSS40300MDR2G | onsemi |
Description: TRANS 2PNP DUAL 40V 3A 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 2745 шт: термін постачання 21-31 дні (днів) |
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NSS60600MZ4T3G | onsemi |
Description: TRANS PNP 60V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
на замовлення 7446 шт: термін постачання 21-31 дні (днів) |
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NSS60601MZ4T3G | onsemi |
Description: TRANS NPN 60V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
на замовлення 1962 шт: термін постачання 21-31 дні (днів) |
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NSV20201LT1G | onsemi |
Description: TRANS NPN 20V 2A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 460 mW |
на замовлення 5960 шт: термін постачання 21-31 дні (днів) |
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NSV50150ADT4G | onsemi |
Description: IC CURRENT REGULATOR 10% DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 150mA ~ 350mA Accuracy: ±10% Operating Temperature: -55°C ~ 175°C Supplier Device Package: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVBAS19LT1G | onsemi |
Description: DIODE STANDARD 120V 200MA SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 69155 шт: термін постачання 21-31 дні (днів) |
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NSVBAS21HT3G | onsemi |
Description: DIODE STANDARD 250V 200MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3493 шт: термін постачання 21-31 дні (днів) |
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NSVBAS21M3T5G | onsemi |
Description: DIODE STANDARD 250V 200MA SOT723Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6080 шт: термін постачання 21-31 дні (днів) |
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NSVBAV70TT1G | onsemi |
Description: DIODE ARRAY GP 100V 100MA SC75Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3251 шт: термін постачання 21-31 дні (днів) |
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NSVBC143ZPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVBCP56-10T3G | onsemi |
Description: TRANS NPN 80V 1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVBCP69T1G | onsemi |
Description: TRANS PNP 20V 1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W |
на замовлення 10901 шт: термін постачання 21-31 дні (днів) |
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NSVBCW68GLT1G | onsemi |
Description: TRANS PNP 45V 0.8A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
на замовлення 29664 шт: термін постачання 21-31 дні (днів) |
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NSVBCX17LT1G | onsemi |
Description: TRANS PNP 45V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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NSVEMC2DXV5T1G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-553 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1109 шт: термін постачання 21-31 дні (днів) |
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NSVIMD10AMT1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SC-74RPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 285mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V Resistor - Base (R1): 13kOhms, 130Ohms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-74R Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2861 шт: термін постачання 21-31 дні (днів) |
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NSVMMBD354LT1G | onsemi |
Description: DIODE SCHOTTKY 7V 300MW SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Common Cathode Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 46691 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT3906TT1G | onsemi |
Description: TRANS PNP 40V 0.2A SC75 SOT416Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6468 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT5087LT1G | onsemi |
Description: TRANS PNP 50V 0.05A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 225 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 171135 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT6429LT1G | onsemi |
Description: TRANS NPN 45V 0.2A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V Frequency - Transition: 700MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT6520LT1G | onsemi |
Description: TRANS PNP 350V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 225 mW Qualification: AEC-Q101 |
на замовлення 6379 шт: термін постачання 21-31 дні (днів) |
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NSVMMBTA05LT1G | onsemi |
Description: TRANS NPN 60V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 225 mW |
на замовлення 11384 шт: термін постачання 21-31 дні (днів) |
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NSVMUN2212T1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5132T1G | onsemi |
Description: TRANS PREBIAS PNP 50V SC70-3 |
на замовлення 5164 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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NSVMUN5135DW1T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5211DW1T2G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 385mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11757 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5213DW1T3G | onsemi |
Description: TRANS NPN 50V DUAL BIPO SC88-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18342 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5316DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 112390 шт: термін постачання 21-31 дні (днів) |
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NSVPZTA92T1G | onsemi |
Description: TRANS PNP 300V 0.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.5 W |
на замовлення 556 шт: термін постачання 21-31 дні (днів) |
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NSVR0230M2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD723Packaging: Cut Tape (CT) Package / Case: SOD-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-723 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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NSVR0230P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V Qualification: AEC-Q101 |
на замовлення 6717 шт: термін постачання 21-31 дні (днів) |
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NSVR0240HT1G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 11577 шт: термін постачання 21-31 дні (днів) |
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NSVR0240P2T5G | onsemi |
Description: DIODE SCHOTTKY 40V 200MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 21663 шт: термін постачання 21-31 дні (днів) |
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NSVR0520V2T1G | onsemi |
Description: DIODE SCHOTTKY 20V 500MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 35pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVUMC5NT2G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SC88APackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V Resistor - Base (R1): 47kOhms, 4.7kOhms Resistor - Emitter Base (R2): 47kOhms, 10kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| NRVHP120SFT3G |
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Виробник: onsemi
Description: DIODE STANDARD 200V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7665 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.12 грн |
| 28+ | 11.18 грн |
| 5000+ | 10.70 грн |
| NRVHPM220T3G |
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Виробник: onsemi
Description: DIODE STANDARD 200V 2A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 2A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.28 грн |
| 10+ | 33.76 грн |
| 100+ | 25.39 грн |
| 500+ | 18.38 грн |
| 1000+ | 15.20 грн |
| 2000+ | 14.36 грн |
| 5000+ | 13.29 грн |
| NRVTS245ESFT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 45 V
Qualification: AEC-Q101
на замовлення 37335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.30 грн |
| 12+ | 26.51 грн |
| 100+ | 15.91 грн |
| 500+ | 13.83 грн |
| 1000+ | 9.40 грн |
| 2000+ | 8.66 грн |
| 5000+ | 8.16 грн |
| NRVTS260ESFT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
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од. на суму грн.
| NRVTSA3100ET3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 14.3pF @ 100V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 995 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 14.3pF @ 100V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 995 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NRVTSA4100T3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 54.7pF @ 100V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 54.7pF @ 100V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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од. на суму грн.
| NRVUS220VT3G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2648 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.02 грн |
| 15+ | 20.62 грн |
| 100+ | 14.76 грн |
| 500+ | 10.45 грн |
| 1000+ | 9.35 грн |
| NRVUS230T3G |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 300V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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В кошику
од. на суму грн.
| NS5A4684SMNTBG |
![]() |
Виробник: onsemi
Description: IC SWITCH SPDTX2 400MOHM 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 60pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPDTX2 400MOHM 10WQFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 10-WQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 60pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 2
на замовлення 39156 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.20 грн |
| 10+ | 34.14 грн |
| 25+ | 30.67 грн |
| 100+ | 25.19 грн |
| 250+ | 23.49 грн |
| 500+ | 22.46 грн |
| 1000+ | 21.81 грн |
| NSBC114EDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.10 грн |
| 20+ | 15.11 грн |
| 100+ | 9.50 грн |
| 500+ | 6.63 грн |
| 1000+ | 5.89 грн |
| 2000+ | 5.27 грн |
| NSBC114EF3T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 92088 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.75 грн |
| 23+ | 13.29 грн |
| 100+ | 8.32 грн |
| 500+ | 5.78 грн |
| 1000+ | 5.12 грн |
| 2000+ | 4.57 грн |
| NSBC114EPDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 674 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.75 грн |
| 23+ | 13.29 грн |
| 100+ | 8.33 грн |
| 500+ | 5.79 грн |
| NSBC114YDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 122126 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.75 грн |
| 23+ | 13.29 грн |
| 100+ | 8.33 грн |
| 500+ | 5.79 грн |
| 1000+ | 5.14 грн |
| 2000+ | 4.58 грн |
| NSBC114YF3T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 13728 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.61 грн |
| 26+ | 11.86 грн |
| 100+ | 7.39 грн |
| 500+ | 5.12 грн |
| 1000+ | 4.53 грн |
| 2000+ | 4.03 грн |
| NSBC114YPDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 371274 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.75 грн |
| 23+ | 13.29 грн |
| 100+ | 8.33 грн |
| 500+ | 5.79 грн |
| 1000+ | 5.14 грн |
| 2000+ | 4.58 грн |
| NSBC124XDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
на замовлення 1945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.53 грн |
| 20+ | 15.26 грн |
| 100+ | 10.32 грн |
| 500+ | 7.48 грн |
| 1000+ | 6.75 грн |
| NSBC143ZDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Part Status: Active
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 1864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.65 грн |
| 14+ | 22.21 грн |
| 100+ | 14.10 грн |
| 500+ | 9.94 грн |
| 1000+ | 8.88 грн |
| NSI45025ZT1G |
![]() |
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 25mA
Accuracy: ±15%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 25mA
Accuracy: ±15%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
на замовлення 363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.45 грн |
| 17+ | 18.28 грн |
| 25+ | 16.29 грн |
| 100+ | 13.23 грн |
| 250+ | 12.24 грн |
| NSI45030ZT1G |
![]() |
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NSR0115CQP6T5G |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| NSR0170HT1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
товару немає в наявності
В кошику
од. на суму грн.
| NSR01L30P2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| NSR0240V2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 9459 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.26 грн |
| 32+ | 9.74 грн |
| 100+ | 6.05 грн |
| 500+ | 4.17 грн |
| 1000+ | 3.57 грн |
| 2000+ | 3.26 грн |
| NSR02F30MXT5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| NSS40300DDR2G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 14697 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.64 грн |
| 10+ | 53.70 грн |
| 100+ | 35.51 грн |
| 500+ | 26.00 грн |
| 1000+ | 23.64 грн |
| NSS40300MDR2G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2745 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.42 грн |
| 10+ | 54.54 грн |
| 100+ | 36.06 грн |
| 500+ | 26.42 грн |
| 1000+ | 24.03 грн |
| NSS60600MZ4T3G |
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Виробник: onsemi
Description: TRANS PNP 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS PNP 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 7446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.42 грн |
| 10+ | 32.18 грн |
| 100+ | 21.96 грн |
| 500+ | 16.25 грн |
| 1000+ | 14.81 грн |
| 2000+ | 13.59 грн |
| NSS60601MZ4T3G |
![]() |
Виробник: onsemi
Description: TRANS NPN 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 1962 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.91 грн |
| 10+ | 35.43 грн |
| 100+ | 24.31 грн |
| 500+ | 18.05 грн |
| 1000+ | 16.48 грн |
| NSV20201LT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 20V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
Description: TRANS NPN 20V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.30 грн |
| 11+ | 29.31 грн |
| 100+ | 20.35 грн |
| 500+ | 14.91 грн |
| 1000+ | 12.12 грн |
| NSV50150ADT4G |
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Виробник: onsemi
Description: IC CURRENT REGULATOR 10% DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 150mA ~ 350mA
Accuracy: ±10%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DPAK
Description: IC CURRENT REGULATOR 10% DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 150mA ~ 350mA
Accuracy: ±10%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DPAK
товару немає в наявності
В кошику
од. на суму грн.
| NSVBAS19LT1G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 120V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 120V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 69155 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.06 грн |
| 66+ | 4.61 грн |
| 100+ | 4.40 грн |
| 500+ | 2.48 грн |
| 1000+ | 2.27 грн |
| NSVBAS21HT3G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3493 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.06 грн |
| 98+ | 3.10 грн |
| 123+ | 2.46 грн |
| NSVBAS21M3T5G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.83 грн |
| 28+ | 10.95 грн |
| 100+ | 6.85 грн |
| 500+ | 4.72 грн |
| 1000+ | 4.17 грн |
| 2000+ | 3.70 грн |
| NSVBAV70TT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 100V 100MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 100V 100MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3251 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.33 грн |
| 38+ | 8.01 грн |
| 100+ | 4.95 грн |
| 500+ | 3.38 грн |
| 1000+ | 2.97 грн |
| NSVBC143ZPDXV6T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NSVBCP56-10T3G |
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Виробник: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
товару немає в наявності
В кошику
од. на суму грн.
| NSVBCP69T1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 20V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Description: TRANS PNP 20V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
на замовлення 10901 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.65 грн |
| 14+ | 22.21 грн |
| 100+ | 14.13 грн |
| 500+ | 9.97 грн |
| NSVBCW68GLT1G |
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Виробник: onsemi
Description: TRANS PNP 45V 0.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS PNP 45V 0.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
на замовлення 29664 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.67 грн |
| 20+ | 15.79 грн |
| 100+ | 9.93 грн |
| 500+ | 6.93 грн |
| 1000+ | 6.16 грн |
| NSVBCX17LT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.88 грн |
| 20+ | 15.18 грн |
| NSVEMC2DXV5T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-553
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN/PNP 50V SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-553
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1109 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.57 грн |
| 13+ | 24.47 грн |
| 100+ | 15.58 грн |
| 500+ | 11.00 грн |
| 1000+ | 9.84 грн |
| NSVIMD10AMT1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SC-74R
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 285mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V
Resistor - Base (R1): 13kOhms, 130Ohms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-74R
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SC-74R
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 285mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V
Resistor - Base (R1): 13kOhms, 130Ohms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-74R
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.51 грн |
| 15+ | 20.24 грн |
| 100+ | 12.82 грн |
| 500+ | 9.01 грн |
| 1000+ | 8.04 грн |
| NSVMMBD354LT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 7V 300MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 7V 300MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 46691 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.28 грн |
| 10+ | 37.84 грн |
| 25+ | 35.35 грн |
| 100+ | 26.53 грн |
| 250+ | 24.63 грн |
| 500+ | 20.84 грн |
| 1000+ | 15.84 грн |
| NSVMMBT3906TT1G |
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Виробник: onsemi
Description: TRANS PNP 40V 0.2A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.53 грн |
| 22+ | 13.75 грн |
| 100+ | 8.60 грн |
| 500+ | 5.97 грн |
| 1000+ | 5.29 грн |
| NSVMMBT5087LT1G |
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Виробник: onsemi
Description: TRANS PNP 50V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 171135 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.96 грн |
| 24+ | 12.92 грн |
| 100+ | 8.10 грн |
| 500+ | 5.62 грн |
| 1000+ | 4.98 грн |
| NSVMMBT6429LT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.18 грн |
| 25+ | 12.46 грн |
| 100+ | 7.81 грн |
| 500+ | 5.42 грн |
| 1000+ | 4.80 грн |
| NSVMMBT6520LT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 350V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 225 mW
Qualification: AEC-Q101
Description: TRANS PNP 350V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 225 mW
Qualification: AEC-Q101
на замовлення 6379 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.85 грн |
| 11+ | 28.55 грн |
| 100+ | 18.38 грн |
| 500+ | 13.11 грн |
| 1000+ | 11.78 грн |
| NSVMMBTA05LT1G |
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Виробник: onsemi
Description: TRANS NPN 60V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
Description: TRANS NPN 60V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
на замовлення 11384 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.32 грн |
| 21+ | 14.43 грн |
| 100+ | 9.07 грн |
| 500+ | 6.32 грн |
| 1000+ | 5.61 грн |
| NSVMUN2212T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 348 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.26 грн |
| 23+ | 13.29 грн |
| 100+ | 7.03 грн |
| NSVMUN5132T1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Description: TRANS PREBIAS PNP 50V SC70-3
на замовлення 5164 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| NSVMUN5135DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.04 грн |
| 29+ | 10.57 грн |
| 100+ | 6.59 грн |
| 500+ | 4.55 грн |
| 1000+ | 4.02 грн |
| NSVMUN5211DW1T2G |
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Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11757 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.39 грн |
| 26+ | 11.86 грн |
| 100+ | 7.40 грн |
| 500+ | 5.11 грн |
| 1000+ | 4.51 грн |
| NSVMUN5213DW1T3G |
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Виробник: onsemi
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18342 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.39 грн |
| 26+ | 11.86 грн |
| 100+ | 7.41 грн |
| 500+ | 5.12 грн |
| 1000+ | 4.52 грн |
| 2000+ | 4.02 грн |
| 5000+ | 3.41 грн |
| NSVMUN5316DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 112390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.04 грн |
| 29+ | 10.50 грн |
| 100+ | 6.58 грн |
| 500+ | 4.54 грн |
| 1000+ | 4.01 грн |
| NSVPZTA92T1G |
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Виробник: onsemi
Description: TRANS PNP 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
Description: TRANS PNP 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
на замовлення 556 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.00 грн |
| 13+ | 23.57 грн |
| 100+ | 15.00 грн |
| 500+ | 10.63 грн |
| NSVR0230M2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD723
Packaging: Cut Tape (CT)
Package / Case: SOD-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-723
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOD723
Packaging: Cut Tape (CT)
Package / Case: SOD-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-723
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.59 грн |
| 17+ | 18.13 грн |
| 100+ | 11.47 грн |
| 500+ | 8.05 грн |
| 1000+ | 7.17 грн |
| 2000+ | 6.43 грн |
| NSVR0230P2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Qualification: AEC-Q101
на замовлення 6717 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.16 грн |
| 13+ | 24.32 грн |
| 100+ | 14.60 грн |
| 500+ | 12.68 грн |
| 1000+ | 8.63 грн |
| 2000+ | 7.94 грн |
| NSVR0240HT1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
на замовлення 11577 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.26 грн |
| 31+ | 9.97 грн |
| 100+ | 6.18 грн |
| 500+ | 4.25 грн |
| 1000+ | 3.75 грн |
| NSVR0240P2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Qualification: AEC-Q101
на замовлення 21663 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.55 грн |
| 44+ | 6.95 грн |
| 100+ | 4.31 грн |
| 500+ | 2.94 грн |
| 1000+ | 2.58 грн |
| NSVR0520V2T1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NSVUMC5NT2G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN/PNP 50V SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
































