| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NSBC114EF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 92088 шт: термін постачання 21-31 дні (днів) |
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NSBC114EPDP6T5G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 674 шт: термін постачання 21-31 дні (днів) |
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NSBC114YDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 |
на замовлення 122126 шт: термін постачання 21-31 дні (днів) |
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NSBC114YF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 13728 шт: термін постачання 21-31 дні (днів) |
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NSBC114YPDP6T5G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 371274 шт: термін постачання 21-31 дні (днів) |
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NSBC124XDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT563Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 1945 шт: термін постачання 21-31 дні (днів) |
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NSBC143ZDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963Part Status: Active Supplier Device Package: SOT-963 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Cut Tape (CT) |
на замовлення 1864 шт: термін постачання 21-31 дні (днів) |
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NSI45025ZT1G | onsemi |
Description: IC CURRENT REGULATOR 15% SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 25mA Accuracy: ±15% Operating Temperature: -40°C ~ 125°C Supplier Device Package: SOT-223 (TO-261) Part Status: Active |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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NSI45030ZT1G | onsemi |
Description: IC CURRENT REGULATOR 15% SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 45V Current - Output: 30mA Accuracy: ±15% Operating Temperature: -40°C ~ 125°C Supplier Device Package: SOT-223 (TO-261) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0115CQP6T5G | onsemi |
Description: DIODE ARR SCHOT 15V 100MA SOT963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-963 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA Current - Reverse Leakage @ Vr: 15 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0170HT1G | onsemi |
Description: DIODE SCHOTTKY 70V 70MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 70mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA Current - Reverse Leakage @ Vr: 3 µA @ 70 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR01L30P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 100MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0240V2T5G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 261 шт: термін постачання 21-31 дні (днів) |
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NSR02F30MXT5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA 2X3DFNPackaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSS40300DDR2G | onsemi |
Description: TRANS 2PNP DUAL 40V 3A 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 14697 шт: термін постачання 21-31 дні (днів) |
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NSS40300MDR2G | onsemi |
Description: TRANS 2PNP DUAL 40V 3A 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 2745 шт: термін постачання 21-31 дні (днів) |
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NSS60600MZ4T3G | onsemi |
Description: TRANS PNP 60V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
на замовлення 7446 шт: термін постачання 21-31 дні (днів) |
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NSS60601MZ4T3G | onsemi |
Description: TRANS NPN 60V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
на замовлення 1962 шт: термін постачання 21-31 дні (днів) |
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NSV20201LT1G | onsemi |
Description: TRANS NPN 20V 2A SOT23-3Power - Max: 460 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5960 шт: термін постачання 21-31 дні (днів) |
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NSV50150ADT4G | onsemi |
Description: IC CURRENT REGULATOR 10% DPAKSupplier Device Package: DPAK Operating Temperature: -55°C ~ 175°C Accuracy: ±10% Current - Output: 150mA ~ 350mA Voltage - Input: 50V Function: Current Regulator Mounting Type: Surface Mount Sensing Method: High/Low-Side Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVBAS19LT1G | onsemi |
Description: DIODE STANDARD 120V 200MA SOT233Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 69155 шт: термін постачання 21-31 дні (днів) |
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NSVBAS21HT3G | onsemi |
Description: DIODE STANDARD 250V 200MA SOD323Qualification: AEC-Q101 Grade: Automotive Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 250 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns |
на замовлення 3493 шт: термін постачання 21-31 дні (днів) |
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NSVBAS21M3T5G | onsemi |
Description: DIODE STANDARD 250V 200MA SOT723Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3880 шт: термін постачання 21-31 дні (днів) |
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NSVBAV70TT1G | onsemi |
Description: DIODE ARRAY GP 100V 100MA SC75Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3251 шт: термін постачання 21-31 дні (днів) |
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NSVBC143ZPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVBCP56-10T3G | onsemi |
Description: TRANS NPN 80V 1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVBCP69T1G | onsemi |
Description: TRANS PNP 20V 1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W |
на замовлення 10691 шт: термін постачання 21-31 дні (днів) |
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NSVBCW68GLT1G | onsemi |
Description: TRANS PNP 45V 0.8A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
на замовлення 29664 шт: термін постачання 21-31 дні (днів) |
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NSVBCX17LT1G | onsemi |
Description: TRANS PNP 45V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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NSVEMC2DXV5T1G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT553Package / Case: SOT-553 Packaging: Cut Tape (CT) Supplier Device Package: SOT-553 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) Qualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Part Status: Active |
на замовлення 1109 шт: термін постачання 21-31 дні (днів) |
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NSVIMD10AMT1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SC-74RPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 285mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V Resistor - Base (R1): 13kOhms, 130Ohms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-74R Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2861 шт: термін постачання 21-31 дні (днів) |
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NSVMMBD354LT1G | onsemi |
Description: DIODE SCHOTTKY 7V 300MW SOT23-3Power Dissipation (Max): 300 mW Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 7V Capacitance @ Vr, F: 1pF @ 0V, 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Schottky - 1 Pair Common Cathode Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 46691 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT3906TT1G | onsemi |
Description: TRANS PNP 40V 0.2A SC75 SOT416Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6136 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT5087LT1G | onsemi |
Description: TRANS PNP 50V 0.05A SOT23-3Qualification: AEC-Q101 Grade: Automotive Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 50 mA Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 40MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 123729 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT6429LT1G | onsemi |
Description: TRANS NPN 45V 0.2A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V Frequency - Transition: 700MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT6520LT1G | onsemi |
Description: TRANS PNP 350V 0.5A SOT23-3Qualification: AEC-Q101 Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 6379 шт: термін постачання 21-31 дні (днів) |
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NSVMMBTA05LT1G | onsemi |
Description: TRANS NPN 60V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 225 mW |
на замовлення 1497 шт: термін постачання 21-31 дні (днів) |
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NSVMUN2212T1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Power - Max: 230 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5132T1G | onsemi |
Description: TRANS PREBIAS PNP 50V SC70-3 |
на замовлення 5164 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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NSVMUN5135DW1T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5211DW1T2G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-363Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 385mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1364 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5213DW1T3G | onsemi |
Description: TRANS NPN 50V DUAL BIPO SC88-6Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SC-88/SC70-6/SOT-363 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 18342 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5316DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 112390 шт: термін постачання 21-31 дні (днів) |
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NSVPZTA92T1G | onsemi |
Description: TRANS PNP 300V 0.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.5 W |
на замовлення 556 шт: термін постачання 21-31 дні (днів) |
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NSVR0230M2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD723Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-723 Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-723 Packaging: Cut Tape (CT) |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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NSVR0230P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD923Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-923 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-923 |
на замовлення 6717 шт: термін постачання 21-31 дні (днів) |
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NSVR0240HT1G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD323Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 4pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 11577 шт: термін постачання 21-31 дні (днів) |
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NSVR0240P2T5G | onsemi |
Description: DIODE SCHOTTKY 40V 200MA SOD923Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-923 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 7pF @ 1V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-923 Packaging: Cut Tape (CT) |
на замовлення 21663 шт: термін постачання 21-31 дні (днів) |
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NSVR0520V2T1G | onsemi |
Description: DIODE SCHOTTKY 20V 500MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 35pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVUMC5NT2G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SC88AQualification: AEC-Q101 Grade: Automotive Supplier Device Package: SC-88A (SC-70-5/SOT-353) Resistor - Emitter Base (R2): 47kOhms, 10kOhms Resistor - Base (R1): 47kOhms, 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTDV20P06LT4G | onsemi |
Description: MOSFET P-CH 60V 15.5A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTJD4152PT2G | onsemi |
Description: MOSFET 2P-CH 20V 0.88A SC88Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Current - Continuous Drain (Id) @ 25°C: 880mA Drain to Source Voltage (Vdss): 20V Power - Max: 272mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V |
на замовлення 22228 шт: термін постачання 21-31 дні (днів) |
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NTK3139PT5G | onsemi |
Description: MOSFET P-CH 20V 660MA SOT723Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-723 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 15287 шт: термін постачання 21-31 дні (днів) |
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NTLUS3A18PZTBG | onsemi |
Description: MOSFET P-CH 20V 5.1A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTLUS3A40PZTBG | onsemi |
Description: MOSFET P-CH 20V 4A 6UDFNDrain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4837NHT1G | onsemi |
Description: MOSFET N-CH 30V 10.2A/75A 5DFNPower Dissipation (Max): 880mW (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.5V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4C025NT1G | onsemi |
Description: MOSFET N-CH 30V 20A/69A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc) Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 1770 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C029NT1G | onsemi |
Description: MOSFET N-CH 30V 15A/46A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
на замовлення 18550 шт: термін постачання 21-31 дні (днів) |
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NTMS4937NR2G | onsemi |
Description: MOSFET N-CH 30V 8.6A 8SOICRds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 810mW (Ta) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTR3C21NZT1G | onsemi |
Description: MOSFET N-CH 20V 3.6A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 755 шт: термін постачання 21-31 дні (днів) |
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| NSBC114EF3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 92088 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.42 грн |
| 23+ | 13.10 грн |
| 100+ | 8.20 грн |
| 500+ | 5.70 грн |
| 1000+ | 5.05 грн |
| 2000+ | 4.51 грн |
| NSBC114EPDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 674 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.42 грн |
| 23+ | 13.10 грн |
| 100+ | 8.21 грн |
| 500+ | 5.71 грн |
| NSBC114YDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 122126 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.42 грн |
| 23+ | 13.10 грн |
| 100+ | 8.21 грн |
| 500+ | 5.71 грн |
| 1000+ | 5.06 грн |
| 2000+ | 4.52 грн |
| NSBC114YF3T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 13728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.33 грн |
| 26+ | 11.69 грн |
| 100+ | 7.29 грн |
| 500+ | 5.04 грн |
| 1000+ | 4.46 грн |
| 2000+ | 3.98 грн |
| NSBC114YPDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 371274 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.42 грн |
| 23+ | 13.10 грн |
| 100+ | 8.21 грн |
| 500+ | 5.71 грн |
| 1000+ | 5.06 грн |
| 2000+ | 4.52 грн |
| NSBC124XDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 1945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.20 грн |
| 20+ | 15.04 грн |
| 100+ | 10.17 грн |
| 500+ | 7.38 грн |
| 1000+ | 6.65 грн |
| NSBC143ZDP6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Part Status: Active
Supplier Device Package: SOT-963
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN 50V SOT-963
Part Status: Active
Supplier Device Package: SOT-963
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Cut Tape (CT)
на замовлення 1864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.11 грн |
| 14+ | 21.89 грн |
| 100+ | 13.90 грн |
| 500+ | 9.80 грн |
| 1000+ | 8.75 грн |
| NSI45025ZT1G |
![]() |
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 25mA
Accuracy: ±15%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 25mA
Accuracy: ±15%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.06 грн |
| 17+ | 18.02 грн |
| 25+ | 16.05 грн |
| 100+ | 13.04 грн |
| 250+ | 12.07 грн |
| NSI45030ZT1G |
![]() |
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NSR0115CQP6T5G |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| NSR0170HT1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
товару немає в наявності
В кошику
од. на суму грн.
| NSR01L30P2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| NSR0240V2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 261 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.78 грн |
| 29+ | 10.42 грн |
| 100+ | 6.45 грн |
| NSR02F30MXT5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| NSS40300DDR2G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 14697 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.37 грн |
| 10+ | 52.94 грн |
| 100+ | 35.00 грн |
| 500+ | 25.63 грн |
| 1000+ | 23.30 грн |
| NSS40300MDR2G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2745 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.14 грн |
| 10+ | 53.76 грн |
| 100+ | 35.54 грн |
| 500+ | 26.04 грн |
| 1000+ | 23.68 грн |
| NSS60600MZ4T3G |
![]() |
Виробник: onsemi
Description: TRANS PNP 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS PNP 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 7446 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.71 грн |
| 10+ | 31.72 грн |
| 100+ | 21.64 грн |
| 500+ | 16.02 грн |
| 1000+ | 14.60 грн |
| 2000+ | 13.39 грн |
| NSS60601MZ4T3G |
![]() |
Виробник: onsemi
Description: TRANS NPN 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 1962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.12 грн |
| 10+ | 34.92 грн |
| 100+ | 23.96 грн |
| 500+ | 17.79 грн |
| 1000+ | 16.24 грн |
| NSV20201LT1G |
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Виробник: onsemi
Description: TRANS NPN 20V 2A SOT23-3
Power - Max: 460 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 20V 2A SOT23-3
Power - Max: 460 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.79 грн |
| 11+ | 28.89 грн |
| 100+ | 20.06 грн |
| 500+ | 14.70 грн |
| 1000+ | 11.95 грн |
| NSV50150ADT4G |
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Виробник: onsemi
Description: IC CURRENT REGULATOR 10% DPAK
Supplier Device Package: DPAK
Operating Temperature: -55°C ~ 175°C
Accuracy: ±10%
Current - Output: 150mA ~ 350mA
Voltage - Input: 50V
Function: Current Regulator
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: IC CURRENT REGULATOR 10% DPAK
Supplier Device Package: DPAK
Operating Temperature: -55°C ~ 175°C
Accuracy: ±10%
Current - Output: 150mA ~ 350mA
Voltage - Input: 50V
Function: Current Regulator
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NSVBAS19LT1G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 120V 200MA SOT233
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 120V 200MA SOT233
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 69155 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.96 грн |
| 66+ | 4.54 грн |
| 100+ | 4.33 грн |
| 500+ | 2.45 грн |
| 1000+ | 2.24 грн |
| NSVBAS21HT3G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Description: DIODE STANDARD 250V 200MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
на замовлення 3493 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.96 грн |
| 98+ | 3.05 грн |
| 123+ | 2.43 грн |
| NSVBAS21M3T5G |
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Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.33 грн |
| 27+ | 11.17 грн |
| 100+ | 6.96 грн |
| 500+ | 4.80 грн |
| 1000+ | 4.24 грн |
| 2000+ | 3.76 грн |
| NSVBAV70TT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 100V 100MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 100V 100MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.14 грн |
| 38+ | 7.97 грн |
| 100+ | 4.92 грн |
| 500+ | 3.36 грн |
| 1000+ | 2.95 грн |
| NSVBC143ZPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NSVBCP56-10T3G |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
товару немає в наявності
В кошику
од. на суму грн.
| NSVBCP69T1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 20V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Description: TRANS PNP 20V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
на замовлення 10691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.11 грн |
| 14+ | 22.04 грн |
| 100+ | 14.04 грн |
| 500+ | 9.91 грн |
| NSVBCW68GLT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS PNP 45V 0.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
на замовлення 29664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.29 грн |
| 20+ | 15.56 грн |
| 100+ | 9.78 грн |
| 500+ | 6.83 грн |
| 1000+ | 6.07 грн |
| NSVBCX17LT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.52 грн |
| 20+ | 14.97 грн |
| NSVEMC2DXV5T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT553
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Part Status: Active
Description: TRANS PREBIAS NPN/PNP 50V SOT553
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Part Status: Active
на замовлення 1109 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.98 грн |
| 13+ | 24.12 грн |
| 100+ | 15.35 грн |
| 500+ | 10.85 грн |
| 1000+ | 9.70 грн |
| NSVIMD10AMT1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SC-74R
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 285mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V
Resistor - Base (R1): 13kOhms, 130Ohms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-74R
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SC-74R
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 285mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V
Resistor - Base (R1): 13kOhms, 130Ohms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-74R
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2861 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.02 грн |
| 15+ | 19.95 грн |
| 100+ | 12.63 грн |
| 500+ | 8.89 грн |
| 1000+ | 7.92 грн |
| NSVMMBD354LT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 7V 300MW SOT23-3
Power Dissipation (Max): 300 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 7V 300MW SOT23-3
Power Dissipation (Max): 300 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Cathode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 46691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.62 грн |
| 10+ | 37.30 грн |
| 25+ | 34.84 грн |
| 100+ | 26.15 грн |
| 250+ | 24.28 грн |
| 500+ | 20.54 грн |
| 1000+ | 15.61 грн |
| NSVMMBT3906TT1G |
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Виробник: onsemi
Description: TRANS PNP 40V 0.2A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6136 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.97 грн |
| 22+ | 14.00 грн |
| 100+ | 8.75 грн |
| 500+ | 6.07 грн |
| 1000+ | 5.38 грн |
| NSVMMBT5087LT1G |
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Виробник: onsemi
Description: TRANS PNP 50V 0.05A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 50V 0.05A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 123729 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.20 грн |
| 22+ | 13.70 грн |
| 100+ | 8.58 грн |
| 500+ | 5.96 грн |
| 1000+ | 5.28 грн |
| NSVMMBT6429LT1G |
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Виробник: onsemi
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.88 грн |
| 25+ | 12.28 грн |
| 100+ | 7.70 грн |
| 500+ | 5.34 грн |
| 1000+ | 4.73 грн |
| NSVMMBT6520LT1G |
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Виробник: onsemi
Description: TRANS PNP 350V 0.5A SOT23-3
Qualification: AEC-Q101
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 350V 0.5A SOT23-3
Qualification: AEC-Q101
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 6379 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.16 грн |
| 11+ | 28.14 грн |
| 100+ | 18.12 грн |
| 500+ | 12.93 грн |
| 1000+ | 11.61 грн |
| NSVMMBTA05LT1G |
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Виробник: onsemi
Description: TRANS NPN 60V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
Description: TRANS NPN 60V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
на замовлення 1497 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.52 грн |
| 20+ | 14.97 грн |
| 100+ | 9.40 грн |
| 500+ | 6.55 грн |
| 1000+ | 5.81 грн |
| NSVMUN2212T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.01 грн |
| 23+ | 13.10 грн |
| 100+ | 6.93 грн |
| NSVMUN5132T1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Description: TRANS PREBIAS PNP 50V SC70-3
на замовлення 5164 шт:
термін постачання 21-31 дні (днів)
| NSVMUN5135DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.78 грн |
| 29+ | 10.42 грн |
| 100+ | 6.50 грн |
| 500+ | 4.49 грн |
| 1000+ | 3.96 грн |
| NSVMUN5211DW1T2G |
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Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-363
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 385mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS 2NPN 50V SOT-363
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 385mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1364 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.33 грн |
| 27+ | 11.17 грн |
| 100+ | 6.96 грн |
| 500+ | 4.80 грн |
| 1000+ | 4.24 грн |
| NSVMUN5213DW1T3G |
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Виробник: onsemi
Description: TRANS NPN 50V DUAL BIPO SC88-6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V DUAL BIPO SC88-6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 18342 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.10 грн |
| 26+ | 11.69 грн |
| 100+ | 7.30 грн |
| 500+ | 5.04 грн |
| 1000+ | 4.46 грн |
| 2000+ | 3.96 грн |
| 5000+ | 3.36 грн |
| NSVMUN5316DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 112390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.78 грн |
| 29+ | 10.35 грн |
| 100+ | 6.48 грн |
| 500+ | 4.47 грн |
| 1000+ | 3.95 грн |
| NSVPZTA92T1G |
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Виробник: onsemi
Description: TRANS PNP 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
Description: TRANS PNP 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
на замовлення 556 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.98 грн |
| 13+ | 24.27 грн |
| 100+ | 15.49 грн |
| 500+ | 10.96 грн |
| NSVR0230M2T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD723
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-723
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-723
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 200MA SOD723
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-723
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-723
Packaging: Cut Tape (CT)
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.15 грн |
| 17+ | 17.87 грн |
| 100+ | 11.30 грн |
| 500+ | 7.93 грн |
| 1000+ | 7.06 грн |
| 2000+ | 6.34 грн |
| NSVR0230P2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD923
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-923
Description: DIODE SCHOTTKY 30V 200MA SOD923
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-923
на замовлення 6717 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.70 грн |
| 13+ | 23.97 грн |
| 100+ | 14.39 грн |
| 500+ | 12.50 грн |
| 1000+ | 8.50 грн |
| 2000+ | 7.83 грн |
| NSVR0240HT1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 11577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.01 грн |
| 31+ | 9.83 грн |
| 100+ | 6.09 грн |
| 500+ | 4.19 грн |
| 1000+ | 3.70 грн |
| NSVR0240P2T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 200MA SOD923
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 200MA SOD923
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Cut Tape (CT)
на замовлення 21663 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.37 грн |
| 44+ | 6.85 грн |
| 100+ | 4.25 грн |
| 500+ | 2.90 грн |
| 1000+ | 2.55 грн |
| NSVR0520V2T1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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| NSVUMC5NT2G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SC88A
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Resistor - Base (R1): 47kOhms, 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN/PNP 50V SC88A
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Resistor - Base (R1): 47kOhms, 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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| NTDV20P06LT4G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 60V 15.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 15.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| NTJD4152PT2G |
![]() |
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.88A SC88
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 272mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Description: MOSFET 2P-CH 20V 0.88A SC88
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 272mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
на замовлення 22228 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.43 грн |
| 13+ | 23.23 грн |
| 100+ | 14.79 грн |
| 500+ | 10.45 грн |
| 1000+ | 9.34 грн |
| NTK3139PT5G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 660MA SOT723
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 660MA SOT723
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 15287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.25 грн |
| 15+ | 20.03 грн |
| 100+ | 12.68 грн |
| 500+ | 8.91 грн |
| 1000+ | 7.51 грн |
| 2000+ | 7.13 грн |
| NTLUS3A18PZTBG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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| NTLUS3A40PZTBG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 4A 6UDFN
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Description: MOSFET P-CH 20V 4A 6UDFN
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
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| NTMFS4837NHT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 10.2A/75A 5DFN
Power Dissipation (Max): 880mW (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Description: MOSFET N-CH 30V 10.2A/75A 5DFN
Power Dissipation (Max): 880mW (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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| NTMFS4C025NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 20A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 20A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.39 грн |
| 11+ | 28.07 грн |
| 100+ | 18.03 грн |
| 500+ | 12.85 грн |
| NTMFS4C029NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
на замовлення 18550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.66 грн |
| 14+ | 22.86 грн |
| 100+ | 14.57 грн |
| 500+ | 10.32 грн |
| NTMS4937NR2G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 8.6A 8SOIC
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Description: MOSFET N-CH 30V 8.6A 8SOIC
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
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| NTR3C21NZT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 3.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 3.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 755 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.11 грн |
| 14+ | 22.04 грн |
| 100+ | 14.03 грн |
| 500+ | 9.92 грн |



































