| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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NTS10120MFST1G | onsemi |
 Description: DIODE SCHOTTKY 120V 10A 5DFNCurrent - Reverse Leakage @ Vr: 30 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTS260ESFT1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123FL Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 12 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTTFS4C06NTAG | onsemi |
Description: MOSFET N-CH 30V 11A/67A 8WDFN Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 810mW (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 2310 шт: термін постачання 21-31 дні (днів) |
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NTTFS5116PLTWG | onsemi |
Description: MOSFET P-CH 60V 5.7A 8WDFN Power Dissipation (Max): 3.2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA |
на замовлення 4863 шт: термін постачання 21-31 дні (днів) |
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NUF4310MNTAG | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMD Number of Channels: 4 Part Status: Active ESD Protection: Yes Resistance - Channel (Ohms): 100 Center / Cutoff Frequency: 185MHz (Cutoff) Technology: RC (Pi) Applications: Data Lines for Mobile Devices Filter Order: 2nd Attenuation Value: -25dB @ 800MHz ~ 4GHz Height: 0.031" (0.79mm) Values: R = 100Ohms, C = 9pF Operating Temperature: -40°C ~ 85°C Type: Low Pass Mounting Type: Surface Mount Size / Dimension: 0.063" L x 0.039" W (1.60mm x 1.00mm) Package / Case: 8-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 8354 шт: термін постачання 21-31 дні (днів) |
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NUP4106DR2G | onsemi |
Description: TVS DIODE 3.3VWM 15VC 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8pF @ 1MHz Current - Peak Pulse (10/1000µs): 25A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 8-SOIC Unidirectional Channels: 4 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 500W Power Line Protection: Yes |
на замовлення 8128 шт: термін постачання 21-31 дні (днів) |
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NVD6416ANLT4G-VF01 | onsemi |
Description: MOSFET N-CH 100V 19A DPAK-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DPAK-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7659 шт: термін постачання 21-31 дні (днів) |
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NVD6495NLT4G-VF01 | onsemi |
Description: MOSFET N-CH 100V 25A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 1858 шт: термін постачання 21-31 дні (днів) |
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NVMD6N04R2G | onsemi |
Description: MOSFET 2N-CH 40V 4.6A 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C450NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 110A 5DFN Qualification: AEC-Q101 Grade: Automotive FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) |
на замовлення 1850 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C460NLAFT1G | onsemi |
Description: MOSFET N-CH 40V 21A/78A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 856 шт: термін постачання 21-31 дні (днів) |
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NVR5124PLT1G | onsemi |
Description: MOSFET P-CH 60V 1.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2359 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C06NWFTAG | onsemi |
Description: MOSFET N-CH 30V 21A 8WDFN Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTFS5C673NLTAG | onsemi |
Description: MOSFET N-CH 60V 13A/50A 8WDFN Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 463 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C680NLTAG | onsemi |
Description: MOSFET N-CH 60V 7.82A/20A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTR0202PLT1G | onsemi |
Description: MOSFET P-CH 20V 400MA SOT23 Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.3V @ 250µA Qualification: AEC-Q101 Grade: Automotive |
на замовлення 17777 шт: термін постачання 21-31 дні (днів) |
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NZ9F18VST5G | onsemi |
Description: DIODE ZENER 18V 250MW SOD923 Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: SOD-923 Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-923 Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 342 шт: термін постачання 21-31 дні (днів) |
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NZ9F18VT5G | onsemi |
Description: DIODE ZENER 18V 250MW SOD923 Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-923 Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: SOD-923 Impedance (Max) (Zzt): 50 Ohms |
на замовлення 7935 шт: термін постачання 21-31 дні (днів) |
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NZ9F5V6ST5G | onsemi |
Description: DIODE ZENER 5.6V 250MW SOD923 Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Part Status: Active Supplier Device Package: SOD-923 Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-923 Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 6963 шт: термін постачання 21-31 дні (днів) |
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P3PS850BHG-08CR | onsemi |
Description: IC CLK GEN EMI MODULATOR 8-WDFN DigiKey Programmable: Not Verified Packaging: Cut Tape (CT) |
на замовлення 1637 шт: термін постачання 21-31 дні (днів) |
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PCA9306FMUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN Number of Circuits: 1 Part Status: Active Voltage - VCCB: 1.8 V ~ 5.5 V Voltage - VCCA: 1 V ~ 3.6 V Channels per Circuit: 2 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 8-UDFN (1.45x1) Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 8-UFDFN Features: Auto-Direction Sensing Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PCA9535ECDTR2G | onsemi |
Description: IC XPND 100KHZ I2C SMBUS 24TSSOP DigiKey Programmable: Not Verified Part Status: Active Current - Output Source/Sink: 25mA Supplier Device Package: 24-TSSOP Interrupt Output: Yes Clock Frequency: 100 kHz Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Number of I/O: 16 Interface: I2C, SMBus Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 24-TSSOP (0.173", 4.40mm Width) Features: POR Packaging: Cut Tape (CT) |
на замовлення 1211 шт: термін постачання 21-31 дні (днів) |
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PCA9535ECDWR2G | onsemi |
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC Part Status: Obsolete Current - Output Source/Sink: 25mA Supplier Device Package: 24-SOIC Interrupt Output: Yes DigiKey Programmable: Not Verified Clock Frequency: 100 kHz Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Number of I/O: 16 Interface: I2C, SMBus Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 24-SOIC (0.295", 7.50mm Width) Features: POR Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1Z1SMB5919BT3G | onsemi |
Description: DIODE ZENER 5.6V 3W SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Supplier Device Package: SMB Part Status: Active Tolerance: ±5% Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 2 Ohms Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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S2SA1774G | onsemi |
Description: TRANS PNP 50V 0.1A SC75 SOT416 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-75, SOT-416 |
на замовлення 5105 шт: термін постачання 21-31 дні (днів) |
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SBAS16LT3G | onsemi |
Description: DIODE STANDARD 100V 200MA SOT233 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6950 шт: термін постачання 21-31 дні (днів) |
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SBAT54CWT1G | onsemi |
Description: DIODE ARR SCHOTT 30V 200MA SC703 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
на замовлення 57839 шт: термін постачання 21-31 дні (днів) |
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SBAV199LT3G | onsemi |
Description: DIODE ARRAY GP 70V 215MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 70 V Qualification: AEC-Q101 |
на замовлення 19049 шт: термін постачання 21-31 дні (днів) |
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SBAV70LT3G | onsemi |
Description: DIODE ARR GP 100V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 µA @ 70 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBAW56LT3G | onsemi |
Description: DIODE ARRAY GP 70V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 207650 шт: термін постачання 21-31 дні (днів) |
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SBC817-25LT3G | onsemi |
Description: TRANS NPN 45V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBC847BDW1T3G | onsemi |
Description: TRANS 2NPN 45V 100MA SC88/SC70 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBC847CDW1T1G | onsemi |
Description: TRANS 2NPN 45V 100MA SC88/SC70 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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SBC847CWT1G | onsemi |
Description: TRANS NPN 45V 0.1A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SBC848BLT1G | onsemi |
Description: TRANS NPN 30V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8336 шт: термін постачання 21-31 дні (днів) |
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SBC856BDW1T3G | onsemi |
Description: TRANS 2PNP 65V 100MA SC88/SC70 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 599 шт: термін постачання 21-31 дні (днів) |
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SBC857ALT1G | onsemi |
Description: TRANS PNP 45V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12073 шт: термін постачання 21-31 дні (днів) |
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SBCP53-10T1G | onsemi |
Description: TRANS PNP 80V 1.5A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBCP53T1G | onsemi |
Description: TRANS PNP 80V 1.5A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBCP56T1G | onsemi |
Description: TRANS NPN 80V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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SBCP56T3G | onsemi |
Description: TRANS NPN 80V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1636 шт: термін постачання 21-31 дні (днів) |
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SBRS8190T3G | onsemi |
Description: DIODE SCHOTTKY 90V 1A SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBSP52T1G | onsemi |
Description: TRANS NPN DARL 80V 1A SOT223 Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-223 (TO-261) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6527 шт: термін постачання 21-31 дні (днів) |
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SCM1293A-04SO | onsemi |
Description: TVS DIODE 9.9VC SC74 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C Applications: DVI, HDMI Capacitance @ Frequency: 2pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Supplier Device Package: SC-74 Unidirectional Channels: 4 Voltage - Clamping (Max) @ Ipp: 9.9V (Typ) Power Line Protection: Yes Part Status: Active |
на замовлення 112347 шт: термін постачання 21-31 дні (днів) |
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SDTA114YET1G | onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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SDTC114EET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5479 шт: термін постачання 21-31 дні (днів) |
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SDTC114YET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 61959 шт: термін постачання 21-31 дні (днів) |
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SESD7L5.0DT5G | onsemi |
Description: TVS DIODE 5VWM 10.4VC SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 0.25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-723 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.4V Voltage - Clamping (Max) @ Ipp: 10.4V Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SMMBD301LT3G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOT23-3 Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 nA @ 25 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 mA Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 9703 шт: термін постачання 21-31 дні (днів) |
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SMMBF4393LT1G | onsemi |
Description: JFET N-CH 30V SOT23-3 Qualification: AEC-Q101 Grade: Automotive Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Resistance - RDS(On): 100 Ohms Power - Max: 225 mW Drain to Source Voltage (Vdss): 30 V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 26578 шт: термін постачання 21-31 дні (днів) |
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SMMBFJ309LT1G | onsemi |
Description: RF MOSFET JFET 25V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Current Rating (Amps): 30mA Mounting Type: Surface Mount Configuration: N-Channel Technology: JFET Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Voltage - Rated: 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 26676 шт: термін постачання 21-31 дні (днів) |
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SMMBFJ310LT3G | onsemi |
Description: RF MOSFET JFET 10V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Current Rating (Amps): 60mA Mounting Type: Surface Mount Configuration: N-Channel Gain: 12dB Technology: JFET Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Voltage - Rated: 25 V Voltage - Test: 10 V Current - Test: 10 mA Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMBT2369ALT1G | onsemi |
Description: TRANS NPN 15V 0.2A SOT23-3 Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Current - Collector Cutoff (Max): 400nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 200 mA |
на замовлення 115554 шт: термін постачання 21-31 дні (днів) |
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SMMBT6427LT1G | onsemi |
Description: TRANS NPN DARL 40V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 225 mW |
на замовлення 19931 шт: термін постачання 21-31 дні (днів) |
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SMMBTA14LT1G | onsemi |
Description: TRANS NPN DARL 30V 0.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW |
на замовлення 3742 шт: термін постачання 21-31 дні (днів) |
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SMMSD103T1G | onsemi |
Description: DIODE STANDARD 250V 200MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 10822 шт: термін постачання 21-31 дні (днів) |
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SMMSD701T1G | onsemi |
Description: DIODE SCHOTTKY 70V 200MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 35 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 36411 шт: термін постачання 21-31 дні (днів) |
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SMMSZ4689ET1G | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD123 Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Supplier Device Package: SOD-123 Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 214 шт: термін постачання 21-31 дні (днів) |
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SMUN2111T1G | onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC59 Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Power - Max: 230 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 12354 шт: термін постачання 21-31 дні (днів) |
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SMUN2113T1G | onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC59 Qualification: AEC-Q101 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Power - Max: 230 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| NTS10120MFST1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 120V 10A 5DFN
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 120V 10A 5DFN
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTS260ESFT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTTFS4C06NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/67A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A/67A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 2310 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.08 грн |
| 10+ | 36.48 грн |
| 100+ | 23.62 грн |
| 500+ | 16.98 грн |
| NTTFS5116PLTWG |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 5.7A 8WDFN
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Description: MOSFET P-CH 60V 5.7A 8WDFN
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
на замовлення 4863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.23 грн |
| 10+ | 48.40 грн |
| 100+ | 33.54 грн |
| 500+ | 25.11 грн |
| 1000+ | 21.26 грн |
| NUF4310MNTAG |
|
Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Number of Channels: 4
Part Status: Active
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 185MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -25dB @ 800MHz ~ 4GHz
Height: 0.031" (0.79mm)
Values: R = 100Ohms, C = 9pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.039" W (1.60mm x 1.00mm)
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: FILTER RC(PI) 100 OHMS ESD SMD
Number of Channels: 4
Part Status: Active
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 185MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -25dB @ 800MHz ~ 4GHz
Height: 0.031" (0.79mm)
Values: R = 100Ohms, C = 9pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.039" W (1.60mm x 1.00mm)
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 8354 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.74 грн |
| 16+ | 19.36 грн |
| 25+ | 17.78 грн |
| 50+ | 15.69 грн |
| 100+ | 14.76 грн |
| 250+ | 13.61 грн |
| 500+ | 12.59 грн |
| 1000+ | 11.84 грн |
| NUP4106DR2G |
|
Виробник: onsemi
Description: TVS DIODE 3.3VWM 15VC 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Description: TVS DIODE 3.3VWM 15VC 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 500W
Power Line Protection: Yes
на замовлення 8128 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 263.66 грн |
| 10+ | 166.11 грн |
| 100+ | 116.25 грн |
| 500+ | 89.10 грн |
| 1000+ | 89.01 грн |
| NVD6416ANLT4G-VF01 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 19A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 19A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7659 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.84 грн |
| 10+ | 73.19 грн |
| 100+ | 48.95 грн |
| 500+ | 36.21 грн |
| 1000+ | 33.08 грн |
| NVD6495NLT4G-VF01 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 25A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 100V 25A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 1858 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.48 грн |
| 10+ | 76.24 грн |
| 100+ | 51.40 грн |
| 500+ | 38.25 грн |
| 1000+ | 35.04 грн |
| NVMD6N04R2G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 4.6A 8-SOIC
Description: MOSFET 2N-CH 40V 4.6A 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS5C450NLWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Description: MOSFET N-CH 40V 110A 5DFN
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.98 грн |
| 10+ | 118.38 грн |
| 100+ | 81.22 грн |
| 500+ | 61.32 грн |
| NVMFS5C460NLAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.60 грн |
| 10+ | 99.69 грн |
| 100+ | 67.85 грн |
| 500+ | 50.88 грн |
| NVR5124PLT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 1.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 1.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2359 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.16 грн |
| 11+ | 28.22 грн |
| 100+ | 18.14 грн |
| 500+ | 12.95 грн |
| 1000+ | 11.64 грн |
| NVTFS4C06NWFTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS5C673NLTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 463 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.62 грн |
| 10+ | 71.18 грн |
| 100+ | 50.61 грн |
| NVTFS5C680NLTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 7.82A/20A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 7.82A/20A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NVTR0202PLT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 400MA SOT23
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 20V 400MA SOT23
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Qualification: AEC-Q101
Grade: Automotive
на замовлення 17777 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.06 грн |
| 17+ | 18.32 грн |
| 100+ | 9.24 грн |
| 500+ | 7.69 грн |
| 1000+ | 5.98 грн |
| NZ9F18VST5G |
|
Виробник: onsemi
Description: DIODE ZENER 18V 250MW SOD923
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 18V 250MW SOD923
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 342 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.78 грн |
| 23+ | 13.03 грн |
| 100+ | 4.34 грн |
| NZ9F18VT5G |
|
Виробник: onsemi
Description: DIODE ZENER 18V 250MW SOD923
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 50 Ohms
Description: DIODE ZENER 18V 250MW SOD923
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 50 Ohms
на замовлення 7935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.01 грн |
| 27+ | 11.17 грн |
| 100+ | 5.43 грн |
| 500+ | 4.62 грн |
| 1000+ | 4.14 грн |
| NZ9F5V6ST5G |
|
Виробник: onsemi
Description: DIODE ZENER 5.6V 250MW SOD923
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 5.6V 250MW SOD923
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 6963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.37 грн |
| 36+ | 8.34 грн |
| 100+ | 5.55 грн |
| 500+ | 3.97 грн |
| 1000+ | 3.56 грн |
| 2000+ | 3.20 грн |
| P3PS850BHG-08CR |
Виробник: onsemi
Description: IC CLK GEN EMI MODULATOR 8-WDFN
DigiKey Programmable: Not Verified
Packaging: Cut Tape (CT)
Description: IC CLK GEN EMI MODULATOR 8-WDFN
DigiKey Programmable: Not Verified
Packaging: Cut Tape (CT)
на замовлення 1637 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.52 грн |
| 10+ | 101.33 грн |
| 25+ | 96.20 грн |
| 100+ | 74.16 грн |
| 250+ | 69.32 грн |
| 500+ | 61.26 грн |
| 1000+ | 47.57 грн |
| PCA9306FMUTAG |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.8 V ~ 5.5 V
Voltage - VCCA: 1 V ~ 3.6 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UDFN (1.45x1)
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 8-UFDFN
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.8 V ~ 5.5 V
Voltage - VCCA: 1 V ~ 3.6 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UDFN (1.45x1)
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 8-UFDFN
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PCA9535ECDTR2G |
|
Виробник: onsemi
Description: IC XPND 100KHZ I2C SMBUS 24TSSOP
DigiKey Programmable: Not Verified
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
Description: IC XPND 100KHZ I2C SMBUS 24TSSOP
DigiKey Programmable: Not Verified
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
на замовлення 1211 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 371.90 грн |
| 10+ | 237.96 грн |
| 25+ | 207.76 грн |
| 100+ | 163.67 грн |
| 250+ | 148.64 грн |
| 500+ | 139.54 грн |
| 1000+ | 129.84 грн |
| PCA9535ECDWR2G |
|
Виробник: onsemi
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
Part Status: Obsolete
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-SOIC
Interrupt Output: Yes
DigiKey Programmable: Not Verified
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Features: POR
Packaging: Cut Tape (CT)
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
Part Status: Obsolete
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-SOIC
Interrupt Output: Yes
DigiKey Programmable: Not Verified
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Features: POR
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| S1Z1SMB5919BT3G |
|
Виробник: onsemi
Description: DIODE ZENER 5.6V 3W SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Supplier Device Package: SMB
Part Status: Active
Tolerance: ±5%
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 3W SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Supplier Device Package: SMB
Part Status: Active
Tolerance: ±5%
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.42 грн |
| 15+ | 20.33 грн |
| 100+ | 19.23 грн |
| 500+ | 17.40 грн |
| 1000+ | 15.34 грн |
| S2SA1774G |
|
Виробник: onsemi
Description: TRANS PNP 50V 0.1A SC75 SOT416
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-75, SOT-416
Description: TRANS PNP 50V 0.1A SC75 SOT416
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-75, SOT-416
на замовлення 5105 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.42 грн |
| 23+ | 13.25 грн |
| 100+ | 8.34 грн |
| 500+ | 5.80 грн |
| 1000+ | 5.14 грн |
| SBAS16LT3G |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.60 грн |
| 46+ | 6.55 грн |
| 100+ | 4.06 грн |
| 500+ | 2.76 грн |
| 1000+ | 2.42 грн |
| 2000+ | 2.13 грн |
| 5000+ | 1.79 грн |
| SBAT54CWT1G |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 57839 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.79 грн |
| 15+ | 20.25 грн |
| 100+ | 12.82 грн |
| 500+ | 9.01 грн |
| 1000+ | 8.04 грн |
| SBAV199LT3G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 70V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 70 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 70V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 70 V
Qualification: AEC-Q101
на замовлення 19049 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.60 грн |
| 44+ | 6.85 грн |
| 100+ | 4.21 грн |
| 500+ | 2.86 грн |
| 1000+ | 2.51 грн |
| 2000+ | 2.21 грн |
| 5000+ | 1.86 грн |
| SBAV70LT3G |
|
Виробник: onsemi
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Qualification: AEC-Q101
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Qualification: AEC-Q101
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| SBAW56LT3G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 207650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.14 грн |
| 40+ | 7.59 грн |
| 100+ | 4.68 грн |
| 500+ | 3.19 грн |
| 1000+ | 2.80 грн |
| 2000+ | 2.47 грн |
| 5000+ | 2.08 грн |
| SBC817-25LT3G |
|
Виробник: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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| SBC847BDW1T3G |
|
Виробник: onsemi
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SBC847CDW1T1G |
|
Виробник: onsemi
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.46 грн |
| 34+ | 8.86 грн |
| 100+ | 5.51 грн |
| SBC847CWT1G |
|
Виробник: onsemi
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| SBC848BLT1G |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8336 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.82 грн |
| 46+ | 6.48 грн |
| 100+ | 3.98 грн |
| 500+ | 2.70 грн |
| 1000+ | 2.37 грн |
| SBC856BDW1T3G |
|
Виробник: onsemi
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 599 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.78 грн |
| 29+ | 10.35 грн |
| 100+ | 6.43 грн |
| 500+ | 4.43 грн |
| SBC857ALT1G |
|
Виробник: onsemi
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12073 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.10 грн |
| 25+ | 11.91 грн |
| 100+ | 7.47 грн |
| 500+ | 5.16 грн |
| 1000+ | 4.56 грн |
| SBCP53-10T1G |
|
Виробник: onsemi
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SBCP53T1G |
|
Виробник: onsemi
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBCP56T1G |
|
Виробник: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.03 грн |
| 10+ | 30.38 грн |
| SBCP56T3G |
|
Виробник: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1636 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.03 грн |
| 10+ | 30.38 грн |
| 100+ | 19.52 грн |
| 500+ | 13.93 грн |
| 1000+ | 12.51 грн |
| SBRS8190T3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 1A SMB
Description: DIODE SCHOTTKY 90V 1A SMB
товару немає в наявності
В кошику
од. на суму грн.
| SBSP52T1G |
|
Виробник: onsemi
Description: TRANS NPN DARL 80V 1A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS NPN DARL 80V 1A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6527 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.03 грн |
| 10+ | 30.53 грн |
| 100+ | 19.62 грн |
| 500+ | 14.01 грн |
| SCM1293A-04SO |
|
Виробник: onsemi
Description: TVS DIODE 9.9VC SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C
Applications: DVI, HDMI
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 9.9VC SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C
Applications: DVI, HDMI
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Active
на замовлення 112347 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.88 грн |
| 24+ | 12.51 грн |
| 100+ | 7.83 грн |
| 500+ | 5.42 грн |
| 1000+ | 4.79 грн |
| SDTA114YET1G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.37 грн |
| 41+ | 7.37 грн |
| 100+ | 4.57 грн |
| 500+ | 3.13 грн |
| 1000+ | 2.75 грн |
| SDTC114EET1G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5479 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.14 грн |
| 39+ | 7.82 грн |
| 100+ | 4.85 грн |
| 500+ | 3.31 грн |
| 1000+ | 2.91 грн |
| SDTC114YET1G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 61959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.37 грн |
| 41+ | 7.30 грн |
| 100+ | 4.55 грн |
| 500+ | 3.11 грн |
| 1000+ | 2.73 грн |
| SESD7L5.0DT5G |
|
Виробник: onsemi
Description: TVS DIODE 5VWM 10.4VC SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.4V
Voltage - Clamping (Max) @ Ipp: 10.4V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 10.4VC SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-723
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.4V
Voltage - Clamping (Max) @ Ipp: 10.4V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.50 грн |
| 10+ | 50.78 грн |
| 100+ | 33.39 грн |
| 500+ | 24.31 грн |
| 1000+ | 22.05 грн |
| 2000+ | 20.14 грн |
| SMMBD301LT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 9703 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.89 грн |
| 14+ | 22.26 грн |
| 100+ | 14.12 грн |
| 500+ | 9.95 грн |
| 1000+ | 8.88 грн |
| 2000+ | 7.98 грн |
| 5000+ | 6.89 грн |
| SMMBF4393LT1G |
|
Виробник: onsemi
Description: JFET N-CH 30V SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 225 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: JFET N-CH 30V SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 225 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 26578 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.98 грн |
| 11+ | 29.63 грн |
| 100+ | 21.73 грн |
| 500+ | 13.84 грн |
| SMMBFJ309LT1G |
|
Виробник: onsemi
Description: RF MOSFET JFET 25V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: RF MOSFET JFET 25V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 26676 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.33 грн |
| 24+ | 12.66 грн |
| 27+ | 11.26 грн |
| 100+ | 9.07 грн |
| 250+ | 8.36 грн |
| 500+ | 7.92 грн |
| 1000+ | 7.45 грн |
| SMMBFJ310LT3G |
|
Виробник: onsemi
Description: RF MOSFET JFET 10V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 60mA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 12dB
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Voltage - Test: 10 V
Current - Test: 10 mA
Grade: Automotive
Qualification: AEC-Q101
Description: RF MOSFET JFET 10V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 60mA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 12dB
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Voltage - Rated: 25 V
Voltage - Test: 10 V
Current - Test: 10 mA
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMMBT2369ALT1G |
|
Виробник: onsemi
Description: TRANS NPN 15V 0.2A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Description: TRANS NPN 15V 0.2A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
на замовлення 115554 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.06 грн |
| 19+ | 16.08 грн |
| 100+ | 10.12 грн |
| 500+ | 7.07 грн |
| 1000+ | 6.29 грн |
| SMMBT6427LT1G |
|
Виробник: onsemi
Description: TRANS NPN DARL 40V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
Description: TRANS NPN DARL 40V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
на замовлення 19931 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.29 грн |
| 19+ | 15.78 грн |
| 100+ | 9.92 грн |
| 500+ | 6.93 грн |
| 1000+ | 6.16 грн |
| SMMBTA14LT1G |
|
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
Description: TRANS NPN DARL 30V 0.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
на замовлення 3742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.93 грн |
| 17+ | 18.09 грн |
| 100+ | 11.44 грн |
| 500+ | 8.02 грн |
| 1000+ | 7.14 грн |
| SMMSD103T1G |
|
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 10822 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.24 грн |
| 31+ | 9.75 грн |
| 100+ | 6.06 грн |
| 500+ | 4.17 грн |
| 1000+ | 3.67 грн |
| SMMSD701T1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 70V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 35 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE SCHOTTKY 70V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 35 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 36411 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.97 грн |
| 22+ | 13.85 грн |
| 100+ | 8.67 грн |
| 500+ | 6.02 грн |
| 1000+ | 5.33 грн |
| SMMSZ4689ET1G |
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 5.1V 500MW SOD123
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.97 грн |
| 19+ | 15.86 грн |
| 100+ | 7.76 грн |
| SMUN2111T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 12354 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.92 грн |
| 35+ | 8.56 грн |
| 100+ | 5.30 грн |
| 500+ | 3.63 грн |
| 1000+ | 3.20 грн |
| SMUN2113T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
товару немає в наявності
В кошику
од. на суму грн.