Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BC846CLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 225 mW |
на замовлення 8708 шт: термін постачання 21-31 дні (днів) |
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SN74LS30DR2 | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 57500 шт: термін постачання 21-31 дні (днів) |
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SN74LS30MEL | onsemi |
Description: 8 INPUT POSITIVE NAND GATE Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MC74VHC139M | onsemi |
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на замовлення 5650 шт: термін постачання 21-31 дні (днів) |
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MC74VHC139DTR2 | onsemi |
![]() Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 2 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MC74VHC139D | onsemi |
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на замовлення 14160 шт: термін постачання 21-31 дні (днів) |
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MC74VHC139DT | onsemi |
![]() Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 2 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
на замовлення 10075 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C650NLWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 125W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 98µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C650NLWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 125W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 98µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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2SC5966-CA | onsemi |
Description: BIP NPN 20A 800V Packaging: Bulk Part Status: Active |
на замовлення 5992 шт: термін постачання 21-31 дні (днів) |
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NTLJS7D2P02P8ZTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NTLJS7D2P02P8ZTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V |
на замовлення 36114 шт: термін постачання 21-31 дні (днів) |
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NTLJS5D0N03CTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NTLJS5D0N03CTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V |
на замовлення 35828 шт: термін постачання 21-31 дні (днів) |
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NTLJS3D0N02P8ZTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTLJS3D0N02P8ZTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V |
на замовлення 7160 шт: термін постачання 21-31 дні (днів) |
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NTLJS17D0P03P8ZTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTLJS17D0P03P8ZTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 4484 шт: термін постачання 21-31 дні (днів) |
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NVTFWS014P04M8LTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFWS014P04M8LTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 2047 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C628NWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NVMFS5C628NWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 670 шт: термін постачання 21-31 дні (днів) |
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NXV04V120DB1 | onsemi |
![]() Packaging: Tube Package / Case: 19-PowerDIP Module (1.480", 37.60mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Grade: Automotive Current: 160 A Voltage: 40 V |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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NC7S04M5-ON | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
LA6358NSLL-E | onsemi |
![]() Packaging: Bulk Package / Case: 9-SIP Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: -30°C ~ 85°C Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Supplier Device Package: 9-SIP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 30 V |
на замовлення 18024 шт: термін постачання 21-31 дні (днів) |
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LA6358NLL-E | onsemi |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: -30°C ~ 85°C Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-DIP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 30 V |
на замовлення 43543 шт: термін постачання 21-31 дні (днів) |
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LA6358NL-E | onsemi |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: -30°C ~ 85°C Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-DIP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 30 V |
на замовлення 18180 шт: термін постачання 21-31 дні (днів) |
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LA6358N-E | onsemi |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: -30°C ~ 85°C Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-DIP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 30 V |
на замовлення 576 шт: термін постачання 21-31 дні (днів) |
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SNRVUD620CTT4G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SNRVUD620CTT4G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 5879 шт: термін постачання 21-31 дні (днів) |
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NRVUB1620CTT4G | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NRVUB1620CTT4G | onsemi |
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на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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NRVTS8100PFST3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 660pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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XCY99008BR2 | onsemi |
Description: PWM CURRENT-MODE CONTROLLER Packaging: Bulk |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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CS51021ED16 | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 1728 шт: термін постачання 21-31 дні (днів) |
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LV52206XA-TSD | onsemi |
Description: SEU - MOBILE DRIVER, 33048080 Packaging: Bulk Part Status: Active |
на замовлення 95000 шт: термін постачання 21-31 дні (днів) |
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2SC2344E | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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LC75844MHS-MPB-E | onsemi |
![]() Packaging: Tube Package / Case: 36-SOP (0.311", 7.90mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 88 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 6V Supplier Device Package: 36-MFPSDJ Part Status: Obsolete Current - Supply: 230 µA |
на замовлення 1523 шт: термін постачання 21-31 дні (днів) |
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MJE18002 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V Frequency - Transition: 13MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 50 W |
на замовлення 4915 шт: термін постачання 21-31 дні (днів) |
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MJE18002G | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V Frequency - Transition: 13MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 50 W |
на замовлення 65841 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5226BLT1G | onsemi |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 16320 шт: термін постачання 21-31 дні (днів) |
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MC10H115FNR2G | onsemi |
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на замовлення 5737 шт: термін постачання 21-31 дні (днів) |
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MC10H115FNR2 | onsemi |
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на замовлення 4217 шт: термін постачання 21-31 дні (днів) |
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SB0030-04A-AT1 | onsemi |
Description: DIODE SCHOTTKY 40V 30MA Packaging: Bulk Part Status: Active |
на замовлення 705000 шт: термін постачання 21-31 дні (днів) |
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SB0030-04A | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 108292 шт: термін постачання 21-31 дні (днів) |
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H11G46 | onsemi |
Description: PHOTO DARLINGTON OPTOISOLATOR Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Darlington with Base Mounting Type: Through Hole Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 350% @ 500µA Supplier Device Package: 6-DIP Voltage - Output (Max): 55V Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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NL17SZ125DFT2G9D | onsemi |
Description: LOG NON-INVRT 3-STATE BUF Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NL17SZ125DFT2 | onsemi |
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на замовлення 73632 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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CS3524AGN16 | onsemi |
![]() Packaging: Bulk |
на замовлення 27748 шт: термін постачання 21-31 дні (днів) |
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CS3524AGDWR16 | onsemi |
![]() Packaging: Bulk |
на замовлення 28338 шт: термін постачання 21-31 дні (днів) |
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CS3524AGDW16 | onsemi |
![]() Packaging: Bulk |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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NCP1218AD65R2G | onsemi |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9.9V ~ 20V Supplier Device Package: 7-SOIC Fault Protection: Over Load, Over Temperature, Over Voltage Voltage - Start Up: 12.7 V Part Status: Obsolete |
на замовлення 18137 шт: термін постачання 21-31 дні (днів) |
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NCP1217AD65R2 | onsemi |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 150°C (TJ) Duty Cycle: 46.5% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V Supplier Device Package: 8-SOIC Fault Protection: Over Load, Over Temperature, Short Circuit Voltage - Start Up: 12.8 V Part Status: Obsolete |
на замовлення 6776 шт: термін постачання 21-31 дні (днів) |
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NCP1249AD65R2G | onsemi |
![]() Packaging: Bulk Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 30V Supplier Device Package: 9-SOIC Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 18 V Part Status: Obsolete |
на замовлення 16682 шт: термін постачання 21-31 дні (днів) |
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MPS2369RLRA | onsemi |
![]() Packaging: Bulk Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 625 mW Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads |
на замовлення 20588 шт: термін постачання 21-31 дні (днів) |
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NLV14099BDWR2G | onsemi |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Standard Mounting Type: Surface Mount Circuit: 4:4 Logic Type: D-Type, Addressable Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 50ns Supplier Device Package: 16-SOIC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 26241 шт: термін постачання 21-31 дні (днів) |
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NLV14067BDWR2G | onsemi |
![]() Packaging: Bulk Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 280Ohm Supplier Device Package: 24-SOIC Voltage - Supply, Single (V+): 3V ~ 18V Multiplexer/Demultiplexer Circuit: 16:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 100pF Current - Leakage (IS(off)) (Max): 100nA Grade: Automotive Number of Circuits: 1 Qualification: AEC-Q100 |
на замовлення 1851 шт: термін постачання 21-31 дні (днів) |
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LB11970RV-W-AH | onsemi | Description: SINGLE PHASE MOTOR DRIVER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
LE25S20XATAG | onsemi |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
SSV1MUN2211T1 | onsemi | Description: SSV1MUN2211T1 |
товару немає в наявності |
В кошику од. на суму грн. |
BC846CLT1G |
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Виробник: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
на замовлення 8708 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.80 грн |
6000+ | 1.53 грн |
SN74LS30DR2 |
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на замовлення 57500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4438+ | 5.31 грн |
MC74VHC139M |
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на замовлення 5650 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3122+ | 7.00 грн |
MC74VHC139DTR2 |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2427+ | 8.40 грн |
MC74VHC139D |
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на замовлення 14160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2184+ | 9.80 грн |
MC74VHC139DT |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 10075 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2184+ | 9.80 грн |
NVMFD5C650NLWFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 169.49 грн |
NVMFD5C650NLWFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 426.55 грн |
10+ | 274.73 грн |
100+ | 197.59 грн |
500+ | 154.56 грн |
2SC5966-CA |
на замовлення 5992 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
226+ | 97.63 грн |
NTLJS7D2P02P8ZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 23.86 грн |
NTLJS7D2P02P8ZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
на замовлення 36114 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.25 грн |
10+ | 63.68 грн |
100+ | 42.18 грн |
500+ | 30.92 грн |
1000+ | 28.13 грн |
NTLJS5D0N03CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Description: MOSFET N-CH 30V 11.2A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 22.53 грн |
9000+ | 21.32 грн |
NTLJS5D0N03CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Description: MOSFET N-CH 30V 11.2A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
на замовлення 35828 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 66.85 грн |
10+ | 48.97 грн |
100+ | 32.55 грн |
500+ | 25.26 грн |
1000+ | 23.66 грн |
NTLJS3D0N02P8ZTAG |
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Виробник: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Description: MOSFET N-CH 20V 12.1A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 25.31 грн |
6000+ | 22.66 грн |
NTLJS3D0N02P8ZTAG |
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Виробник: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Description: MOSFET N-CH 20V 12.1A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
на замовлення 7160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 93.91 грн |
10+ | 57.48 грн |
100+ | 39.34 грн |
500+ | 28.83 грн |
1000+ | 26.23 грн |
NTLJS17D0P03P8ZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: MOSFET P-CH 30V 7A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 31.76 грн |
NTLJS17D0P03P8ZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: MOSFET P-CH 30V 7A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 4484 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 82.76 грн |
10+ | 65.29 грн |
100+ | 46.30 грн |
500+ | 35.06 грн |
1000+ | 32.24 грн |
NVTFWS014P04M8LTAG |
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Виробник: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 31.14 грн |
NVTFWS014P04M8LTAG |
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Виробник: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2047 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.83 грн |
10+ | 55.87 грн |
100+ | 43.42 грн |
500+ | 34.54 грн |
NVMFS5C628NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NVMFS5C628NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
на замовлення 670 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 245.91 грн |
10+ | 158.78 грн |
100+ | 113.28 грн |
500+ | 89.54 грн |
NXV04V120DB1 |
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Виробник: onsemi
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
на замовлення 84 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2135.95 грн |
44+ | 1282.53 грн |
NC7S04M5-ON |
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Виробник: onsemi
Description: INVERTER, HC/UH SERIES, 1 FUNC,
Description: INVERTER, HC/UH SERIES, 1 FUNC,
товару немає в наявності
В кошику
од. на суму грн.
LA6358NSLL-E |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 9SIP
Packaging: Bulk
Package / Case: 9-SIP
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 9-SIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP GP 2 CIRCUIT 9SIP
Packaging: Bulk
Package / Case: 9-SIP
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 9-SIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
на замовлення 18024 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2664+ | 8.38 грн |
LA6358NLL-E |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
на замовлення 43543 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2049+ | 11.43 грн |
LA6358NL-E |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
на замовлення 18180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2049+ | 11.43 грн |
LA6358N-E |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
на замовлення 576 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
346+ | 66.28 грн |
SNRVUD620CTT4G |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 17.17 грн |
5000+ | 15.34 грн |
SNRVUD620CTT4G |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5879 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 54.91 грн |
10+ | 38.24 грн |
100+ | 30.53 грн |
500+ | 21.83 грн |
1000+ | 18.24 грн |
NRVUB1620CTT4G |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
Description: DIODE GEN PURP 200V 8A D2PAK-3
товару немає в наявності
В кошику
од. на суму грн.
NRVUB1620CTT4G |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
Description: DIODE GEN PURP 200V 8A D2PAK-3
на замовлення 226 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 195.77 грн |
10+ | 169.90 грн |
100+ | 136.58 грн |
NRVTS8100PFST3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 23.16 грн |
XCY99008BR2 |
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1025+ | 21.52 грн |
CS51021ED16 |
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на замовлення 1728 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
386+ | 57.88 грн |
LV52206XA-TSD |
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
683+ | 32.33 грн |
LC75844MHS-MPB-E |
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Виробник: onsemi
Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
на замовлення 1523 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
150+ | 147.54 грн |
MJE18002 |
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Виробник: onsemi
Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
на замовлення 4915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1025+ | 22.09 грн |
MJE18002G |
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Виробник: onsemi
Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
на замовлення 65841 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
513+ | 44.95 грн |
SZMMBZ5226BLT1G |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
на замовлення 16320 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.32 грн |
33+ | 9.50 грн |
100+ | 5.11 грн |
500+ | 3.77 грн |
1000+ | 2.62 грн |
MC10H115FNR2G |
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Виробник: onsemi
Description: IC RECEIVER 0/4 20PLCC
Description: IC RECEIVER 0/4 20PLCC
на замовлення 5737 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
128+ | 183.35 грн |
MC10H115FNR2 |
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Виробник: onsemi
Description: IC RECEIVER 0/4 20PLCC
Description: IC RECEIVER 0/4 20PLCC
на замовлення 4217 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
128+ | 183.35 грн |
SB0030-04A-AT1 |
на замовлення 705000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6662+ | 3.70 грн |
SB0030-04A |
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на замовлення 108292 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5323+ | 4.44 грн |
H11G46 |
Виробник: onsemi
Description: PHOTO DARLINGTON OPTOISOLATOR
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 350% @ 500µA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTO DARLINGTON OPTOISOLATOR
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 350% @ 500µA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
NL17SZ125DFT2 |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC88A
Description: IC BUFFER NON-INVERT 5.5V SC88A
на замовлення 73632 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
CS3524AGN16 |
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на замовлення 27748 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
701+ | 31.60 грн |
CS3524AGDWR16 |
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на замовлення 28338 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
468+ | 47.03 грн |
CS3524AGDW16 |
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на замовлення 235 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
235+ | 99.94 грн |
NCP1218AD65R2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.9V ~ 20V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12.7 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.9V ~ 20V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12.7 V
Part Status: Obsolete
на замовлення 18137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
761+ | 28.85 грн |
NCP1217AD65R2 |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Duty Cycle: 46.5%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 12.8 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Duty Cycle: 46.5%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 12.8 V
Part Status: Obsolete
на замовлення 6776 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
761+ | 29.59 грн |
NCP1249AD65R2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 9SOIC
Packaging: Bulk
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 9-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 9SOIC
Packaging: Bulk
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 9-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
на замовлення 16682 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
701+ | 32.76 грн |
MPS2369RLRA |
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Виробник: onsemi
Description: TRANS NPN 15V 0.2A TO92
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 625 mW
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Description: TRANS NPN 15V 0.2A TO92
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 625 mW
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
на замовлення 20588 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6662+ | 3.57 грн |
NLV14099BDWR2G |
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Виробник: onsemi
Description: IC LATCH 8BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
Grade: Automotive
Qualification: AEC-Q100
Description: IC LATCH 8BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 26241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
503+ | 44.53 грн |
NLV14067BDWR2G |
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Виробник: onsemi
Description: IC MUX 16:1 280OHM 24SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 280Ohm
Supplier Device Package: 24-SOIC
Voltage - Supply, Single (V+): 3V ~ 18V
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 100pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
Description: IC MUX 16:1 280OHM 24SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 280Ohm
Supplier Device Package: 24-SOIC
Voltage - Supply, Single (V+): 3V ~ 18V
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 100pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
на замовлення 1851 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
386+ | 59.11 грн |
LB11970RV-W-AH |
Виробник: onsemi
Description: SINGLE PHASE MOTOR DRIVER
Description: SINGLE PHASE MOTOR DRIVER
товару немає в наявності
В кошику
од. на суму грн.
LE25S20XATAG |
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Виробник: onsemi
Description: IC FLASH 2MBIT SPI 40MHZ 8WLCSP
Description: IC FLASH 2MBIT SPI 40MHZ 8WLCSP
товару немає в наявності
В кошику
од. на суму грн.
SSV1MUN2211T1 |
Виробник: onsemi
Description: SSV1MUN2211T1
Description: SSV1MUN2211T1
товару немає в наявності
В кошику
од. на суму грн.