| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SBS010M-TL-E | onsemi |
Description: SCHOTTKY BARRIER RECTIFIER DIODE Packaging: Bulk Part Status: Active |
на замовлення 167296 шт: термін постачання 21-31 дні (днів) |
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NCV84090DR2G | onsemi |
Description: 90MOHM HIGH SIDE SMARTFETFeatures: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 90mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 24A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV84090DR2G | onsemi |
Description: 90MOHM HIGH SIDE SMARTFETFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 90mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 24A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO Part Status: Active |
на замовлення 2446 шт: термін постачання 21-31 дні (днів) |
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MC74HC7266AF | onsemi |
Description: IC GATE XNOR 4CH 2-INP SOEIAJ-14 Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: XNOR (Exclusive NOR) Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.2V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC7266AFEL | onsemi |
Description: IC GATE XNOR 4CH 2-INP 14SOIC Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: XNOR (Exclusive NOR) Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.2V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FGHL50T65MQDT | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 79 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 21ns/90ns Switching Energy: 1.19mJ (on), 630µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
на замовлення 690 шт: термін постачання 21-31 дні (днів) |
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FGHL50T65MQDTL4 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 79 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/336ns Switching Energy: 1mJ (on), 850µJ (off) Test Condition: 400V, 50A, 30Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
на замовлення 2055 шт: термін постачання 21-31 дні (днів) |
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FFSP0465A | onsemi |
Description: SIC DIODE - 650V, 4A, TO-220-2 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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FFSH4065A | onsemi |
Description: DIODE SIL CARB 650V 48A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1989pF @ 1V, 100kHz Current - Average Rectified (Io): 48A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 404 шт: термін постачання 21-31 дні (днів) |
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MC74LVX8051DTR2G | onsemi |
Description: IC MUX 8:1 25OHM 16TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 85°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.5V ~ 6V Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 8Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74LVX8051DTR2G | onsemi |
Description: IC MUX 8:1 25OHM 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 85°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.5V ~ 6V Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 8Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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FGHL40T65MQDT | onsemi |
Description: IGBT TRENCH FS 650V 60A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 86 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/75ns Switching Energy: 880µJ (on), 490µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W |
на замовлення 1266 шт: термін постачання 21-31 дні (днів) |
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AFGHL40T65RQDN | onsemi |
Description: IGBT FIELD STOP 650V 46A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 44 ns Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 26ns/77ns Switching Energy: 1.14mJ (on), 740µJ (off) Test Condition: 400V, 40A, 2.5Ohm, 15V Gate Charge: 47 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 46 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 288 W Qualification: AEC-Q101 |
на замовлення 11650 шт: термін постачання 21-31 дні (днів) |
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NM24C04EM8 | onsemi |
Description: IC EEPROM 4KBIT I2C 100KHZ 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 100 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: I2C Access Time: 3.5 µs Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| LV8281VR-TLM-H | onsemi | Description: IC SYSTEM MOTOR DRIVER |
на замовлення 92000 шт: термін постачання 21-31 дні (днів) |
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ATP212-TL-H | onsemi |
Description: MOSFET N-CH 60V 35A ATPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74FST3384DT | onsemi |
Description: BUS DRIVERPackaging: Bulk |
на замовлення 5952 шт: термін постачання 21-31 дні (днів) |
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NB7VPQ904MMUTWG | onsemi |
Description: IC USB TYPE C DISPLAY PORTPackaging: Tape & Reel (TR) Package / Case: 32-XFQFN Exposed Pad Delay Time: 110ps Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Voltage - Supply: 1.71V ~ 1.89V Applications: USB Type C Data Rate (Max): 10Gbps Supplier Device Package: 32-X2QFN (2.85x4.5) Signal Conditioning: Input Equalization Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NB7VPQ904MMUTWG | onsemi |
Description: IC USB TYPE C DISPLAY PORTPackaging: Cut Tape (CT) Package / Case: 32-XFQFN Exposed Pad Delay Time: 110ps Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Voltage - Supply: 1.71V ~ 1.89V Applications: USB Type C Data Rate (Max): 10Gbps Supplier Device Package: 32-X2QFN (2.85x4.5) Signal Conditioning: Input Equalization Part Status: Active |
на замовлення 807 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H848NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 13A/59A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS6B75NLWFT1G | onsemi |
Description: MOSFET N-CH 100V 7A/28A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS6B05NLT3G | onsemi |
Description: MOSFET N-CH 100V 17A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS6B25NLWFT3G | onsemi |
Description: MOSFET N-CH 100V 8A/33A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS6H836NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 16A/77A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 95µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDZ451PZ-P | onsemi | Description: MOSFET P-CH 20V 6WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCP45780IMN24RTWG | onsemi |
Description: 780 MCMFeatures: Power Good, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High/Low Side Input Type: Non-Inverting Voltage - Load: 3V ~ 24V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 20A Ratio - Input:Output: 2:1 Supplier Device Package: 12-DFN (3x3) Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP45780IMN24RTWG | onsemi |
Description: 780 MCMFeatures: Power Good, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High/Low Side Input Type: Non-Inverting Voltage - Load: 3V ~ 24V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 20A Ratio - Input:Output: 2:1 Supplier Device Package: 12-DFN (3x3) Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO |
на замовлення 234 шт: термін постачання 21-31 дні (днів) |
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NCP45770IMN24TWG | onsemi |
Description: 770 MCMFeatures: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 3.6mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 24V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: 12-DFN (3x3) Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NCP45790IMN24RTWG | onsemi |
Description: SOLITUDE 790 MCMFeatures: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 14-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 5.6mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 24V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 14-DFN (4x4) Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO Part Status: Active |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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NCP45760IMN24RTWG | onsemi |
Description: 760 MCMFeatures: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 17mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 24V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: 12-DFN (3x3) Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP51513ABMNTWG | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 19V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 150 V Supplier Device Package: 10-DFN (3x3) Rise / Fall Time (Typ): 9ns, 7ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 2A, 3A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP51513ABMNTWG | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 10DFNPackaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 19V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 150 V Supplier Device Package: 10-DFN (3x3) Rise / Fall Time (Typ): 9ns, 7ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 2A, 3A DigiKey Programmable: Not Verified |
на замовлення 1320 шт: термін постачання 21-31 дні (днів) |
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SBT10010JST | onsemi |
Description: DIODE SCHOTTKY 100V 10A TO220 Packaging: Bulk |
на замовлення 90008 шт: термін постачання 21-31 дні (днів) |
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SBT100-10G | onsemi |
Description: DIODE ARR SCHOTT 100V 10A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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NDS0610-PG | onsemi |
Description: MOSFET P-CH 60V SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NDS0610_NL | onsemi |
Description: MOSFET P-CH 60V 120MA SOT23-3Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NCV33163DW2G | onsemi | Description: IC REG BUCK BST ADJ 3.4A 16SOIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCP1655ADR2G | onsemi |
Description: MULTI-MODE POWER FACTOR CORRECTIPackaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8.5V ~ 11.25V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 9-SOIC Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCP1655ADR2G | onsemi |
Description: MULTI-MODE POWER FACTOR CORRECTIPackaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8.5V ~ 11.25V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 9-SOIC Part Status: Active |
на замовлення 4851 шт: термін постачання 21-31 дні (днів) |
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FCP165N60E | onsemi |
Description: MOSFET N-CH 600V 23A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V |
на замовлення 2644 шт: термін постачання 21-31 дні (днів) |
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BZX84B7V5LT1 | onsemi |
Description: DIODE ZENER 7.5V 225MW SOT23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CD8447DR2G | onsemi |
Description: IC COMPARATOR QUAD Packaging: Tape & Reel (TR) |
на замовлення 77500 шт: термін постачання 21-31 дні (днів) |
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AR0330CS1C12SPKAH3-GEVB | onsemi |
Description: BOARD EVAL 3.5 MP 1/3" CIS HBPackaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0330CS Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0330CM1C00SHAA0-DP2 | onsemi |
Description: 3 MP 1/3 CIS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMTSC1D3N08M7TXG | onsemi |
Description: MOSFET N-CH 80V 46A/348A 8DFNWPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V Power Dissipation (Max): 5.1W (Ta), 287W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDPC8012S | onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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FDPC8012S | onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
на замовлення 31951 шт: термін постачання 21-31 дні (днів) |
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NTTFS034N15MC | onsemi |
Description: PTNG 150V 34MOHM POWERCLIP33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta), 53.6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 70µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FDPC8011S-AU01 | onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta), 900mW (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: Powerclip-33 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1N5995BRL-ON | onsemi |
Description: DIODE ZENER 6.2V 500MW DO204AHTolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO–204AH Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 4 V |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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NTPF190N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tj) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: TO-220FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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2SD1828 | onsemi |
Description: TRANS NPN DARL 100V 3A TO-220MLPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 20MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
на замовлення 613 шт: термін постачання 21-31 дні (днів) |
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2SJ650 | onsemi |
Description: MOSFET P-CH 60V 12A TO220MLPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Supplier Device Package: TO-220ML Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V |
на замовлення 479100 шт: термін постачання 21-31 дні (днів) |
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SBJ100-04J | onsemi |
Description: DIODE ARR SCHOTT 40V 10A TO220MLPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 803 шт: термін постачання 21-31 дні (днів) |
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SBT80-06J | onsemi |
Description: DIODE ARR SCHOTT 60V 8A TO-220MLPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 64270 шт: термін постачання 21-31 дні (днів) |
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SBT250-04J | onsemi |
Description: DIODE ARRAY SCHOTTKY 40V TO220ML |
на замовлення 10185 шт: термін постачання 21-31 дні (днів) |
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SBT80-04J | onsemi |
Description: DIODE ARR SCHOTT 40V 8A TO-220MLPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
на замовлення 25202 шт: термін постачання 21-31 дні (днів) |
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SBT80-10JS | onsemi |
Description: DIODE ARR SCHOTT 100V 8A TO220MLPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
на замовлення 18753 шт: термін постачання 21-31 дні (днів) |
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| LB1934T-TLM-E | onsemi |
Description: SYSTEM MOTOR DRIVER Packaging: Bulk |
на замовлення 53682 шт: термін постачання 21-31 дні (днів) |
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LB1933M-TRM-E | onsemi |
Description: IC HALF BRIDGE DRIVER 1A 14MFPS Packaging: Bulk Package / Case: 14-LSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -30°C ~ 75°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 2.2V ~ 7.5V Applications: DC Motors, General Purpose, Stepper Motors Current - Output / Channel: 1A Technology: Bipolar Voltage - Load: 1.8V ~ 7.5V Supplier Device Package: 14-MFPS Fault Protection: Over Temperature Load Type: Inductive |
на замовлення 35916 шт: термін постачання 21-31 дні (днів) |
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| SBS010M-TL-E |
на замовлення 167296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2427+ | 8.68 грн |
| NCV84090DR2G |
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Виробник: onsemi
Description: 90MOHM HIGH SIDE SMARTFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Description: 90MOHM HIGH SIDE SMARTFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NCV84090DR2G |
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Виробник: onsemi
Description: 90MOHM HIGH SIDE SMARTFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Description: 90MOHM HIGH SIDE SMARTFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
на замовлення 2446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 169.35 грн |
| 10+ | 120.60 грн |
| 25+ | 110.13 грн |
| 100+ | 92.55 грн |
| 250+ | 87.40 грн |
| 500+ | 84.29 грн |
| 1000+ | 80.40 грн |
| MC74HC7266AF |
Виробник: onsemi
Description: IC GATE XNOR 4CH 2-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE XNOR 4CH 2-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC7266AFEL |
Виробник: onsemi
Description: IC GATE XNOR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE XNOR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1214+ | 18.16 грн |
| FGHL50T65MQDT |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/90ns
Switching Energy: 1.19mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/90ns
Switching Energy: 1.19mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
на замовлення 690 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 414.70 грн |
| 30+ | 210.41 грн |
| 120+ | 196.61 грн |
| 510+ | 167.18 грн |
| FGHL50T65MQDTL4 |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/336ns
Switching Energy: 1mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 30Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/336ns
Switching Energy: 1mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 30Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
на замовлення 2055 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 389.91 грн |
| 10+ | 291.47 грн |
| 450+ | 193.48 грн |
| 900+ | 176.67 грн |
| FFSP0465A |
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Виробник: onsemi
Description: SIC DIODE - 650V, 4A, TO-220-2
Description: SIC DIODE - 650V, 4A, TO-220-2
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 198+ | 125.35 грн |
| FFSH4065A |
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Виробник: onsemi
Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 404 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1093.74 грн |
| 30+ | 685.85 грн |
| 120+ | 650.54 грн |
| MC74LVX8051DTR2G |
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Виробник: onsemi
Description: IC MUX 8:1 25OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 8Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC MUX 8:1 25OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 8Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
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| MC74LVX8051DTR2G |
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Виробник: onsemi
Description: IC MUX 8:1 25OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 8Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC MUX 8:1 25OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 8Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 67 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.87 грн |
| 10+ | 53.14 грн |
| 25+ | 44.23 грн |
| FGHL40T65MQDT |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/75ns
Switching Energy: 880µJ (on), 490µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/75ns
Switching Energy: 880µJ (on), 490µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
на замовлення 1266 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 361.00 грн |
| 30+ | 180.97 грн |
| 120+ | 168.84 грн |
| 510+ | 139.47 грн |
| 1020+ | 127.35 грн |
| AFGHL40T65RQDN |
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Виробник: onsemi
Description: IGBT FIELD STOP 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/77ns
Switching Energy: 1.14mJ (on), 740µJ (off)
Test Condition: 400V, 40A, 2.5Ohm, 15V
Gate Charge: 47 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 288 W
Qualification: AEC-Q101
Description: IGBT FIELD STOP 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/77ns
Switching Energy: 1.14mJ (on), 740µJ (off)
Test Condition: 400V, 40A, 2.5Ohm, 15V
Gate Charge: 47 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 288 W
Qualification: AEC-Q101
на замовлення 11650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 455.18 грн |
| 30+ | 249.92 грн |
| 120+ | 208.49 грн |
| 510+ | 167.16 грн |
| 1020+ | 163.94 грн |
| NM24C04EM8 |
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Виробник: onsemi
Description: IC EEPROM 4KBIT I2C 100KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 100KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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| LV8281VR-TLM-H |
Виробник: onsemi
Description: IC SYSTEM MOTOR DRIVER
Description: IC SYSTEM MOTOR DRIVER
на замовлення 92000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 366+ | 63.19 грн |
| ATP212-TL-H |
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Виробник: onsemi
Description: MOSFET N-CH 60V 35A ATPAK
Description: MOSFET N-CH 60V 35A ATPAK
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| 74FST3384DT |
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на замовлення 5952 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1210+ | 18.83 грн |
| NB7VPQ904MMUTWG |
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Виробник: onsemi
Description: IC USB TYPE C DISPLAY PORT
Packaging: Tape & Reel (TR)
Package / Case: 32-XFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB Type C
Data Rate (Max): 10Gbps
Supplier Device Package: 32-X2QFN (2.85x4.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: IC USB TYPE C DISPLAY PORT
Packaging: Tape & Reel (TR)
Package / Case: 32-XFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB Type C
Data Rate (Max): 10Gbps
Supplier Device Package: 32-X2QFN (2.85x4.5)
Signal Conditioning: Input Equalization
Part Status: Active
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| NB7VPQ904MMUTWG |
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Виробник: onsemi
Description: IC USB TYPE C DISPLAY PORT
Packaging: Cut Tape (CT)
Package / Case: 32-XFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB Type C
Data Rate (Max): 10Gbps
Supplier Device Package: 32-X2QFN (2.85x4.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: IC USB TYPE C DISPLAY PORT
Packaging: Cut Tape (CT)
Package / Case: 32-XFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB Type C
Data Rate (Max): 10Gbps
Supplier Device Package: 32-X2QFN (2.85x4.5)
Signal Conditioning: Input Equalization
Part Status: Active
на замовлення 807 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.39 грн |
| 10+ | 170.63 грн |
| 100+ | 125.56 грн |
| 500+ | 117.57 грн |
| NVMFS6H848NLWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
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| NVMFS6B75NLWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 100V 7A/28A 5DFN
Description: MOSFET N-CH 100V 7A/28A 5DFN
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| NVMFS6B05NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 100V 17A 5DFN
Description: MOSFET N-CH 100V 17A 5DFN
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| NVMFS6B25NLWFT3G |
Виробник: onsemi
Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
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| NVMFS6H836NLWFT1G |
Виробник: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
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| FDZ451PZ-P |
Виробник: onsemi
Description: MOSFET P-CH 20V 6WLCSP
Description: MOSFET P-CH 20V 6WLCSP
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| NCP45780IMN24RTWG |
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Виробник: onsemi
Description: 780 MCM
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High/Low Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 2:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
Description: 780 MCM
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High/Low Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 2:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
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| NCP45780IMN24RTWG |
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Виробник: onsemi
Description: 780 MCM
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High/Low Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 2:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
Description: 780 MCM
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High/Low Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 2:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
на замовлення 234 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.48 грн |
| 10+ | 153.69 грн |
| 25+ | 131.00 грн |
| 100+ | 98.83 грн |
| NCP45770IMN24TWG |
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Виробник: onsemi
Description: 770 MCM
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Description: 770 MCM
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 86.64 грн |
| 6000+ | 81.79 грн |
| NCP45790IMN24RTWG |
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Виробник: onsemi
Description: SOLITUDE 790 MCM
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 5.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 14-DFN (4x4)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Part Status: Active
Description: SOLITUDE 790 MCM
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 5.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 14-DFN (4x4)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 138.72 грн |
| NCP45760IMN24RTWG |
![]() |
Виробник: onsemi
Description: 760 MCM
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 17mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Description: 760 MCM
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 17mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
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| NCP51513ABMNTWG |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 19V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 9ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 19V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 9ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
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| NCP51513ABMNTWG |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 19V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 9ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 19V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 9ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
на замовлення 1320 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.87 грн |
| 10+ | 63.24 грн |
| 25+ | 57.24 грн |
| 100+ | 47.55 грн |
| 250+ | 44.61 грн |
| 500+ | 42.83 грн |
| 1000+ | 40.70 грн |
| SBT10010JST |
на замовлення 90008 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1402+ | 16.61 грн |
| SBT100-10G |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 423+ | 56.15 грн |
| NDS0610-PG |
Виробник: onsemi
Description: MOSFET P-CH 60V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Description: MOSFET P-CH 60V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
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| NDS0610_NL |
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Виробник: onsemi
Description: MOSFET P-CH 60V 120MA SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Description: MOSFET P-CH 60V 120MA SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
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| NCV33163DW2G |
Виробник: onsemi
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
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| NCP1655ADR2G |
![]() |
Виробник: onsemi
Description: MULTI-MODE POWER FACTOR CORRECTI
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8.5V ~ 11.25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Description: MULTI-MODE POWER FACTOR CORRECTI
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8.5V ~ 11.25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 65.79 грн |
| NCP1655ADR2G |
![]() |
Виробник: onsemi
Description: MULTI-MODE POWER FACTOR CORRECTI
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8.5V ~ 11.25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Description: MULTI-MODE POWER FACTOR CORRECTI
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8.5V ~ 11.25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
на замовлення 4851 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 180.09 грн |
| 10+ | 118.29 грн |
| 100+ | 84.72 грн |
| 500+ | 65.56 грн |
| 1000+ | 61.01 грн |
| FCP165N60E |
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Виробник: onsemi
Description: MOSFET N-CH 600V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
Description: MOSFET N-CH 600V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
на замовлення 2644 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 161.09 грн |
| 10+ | 148.84 грн |
| 100+ | 137.73 грн |
| 800+ | 125.03 грн |
| 1600+ | 123.45 грн |
| BZX84B7V5LT1 |
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Виробник: onsemi
Description: DIODE ZENER 7.5V 225MW SOT23-3
Description: DIODE ZENER 7.5V 225MW SOT23-3
товару немає в наявності
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| CD8447DR2G |
на замовлення 77500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2273+ | 18.17 грн |
| AR0330CS1C12SPKAH3-GEVB |
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Виробник: onsemi
Description: BOARD EVAL 3.5 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0330CS
Supplied Contents: Board(s)
Description: BOARD EVAL 3.5 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0330CS
Supplied Contents: Board(s)
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| AR0330CM1C00SHAA0-DP2 |
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Виробник: onsemi
Description: 3 MP 1/3 CIS
Description: 3 MP 1/3 CIS
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| NVMTSC1D3N08M7TXG |
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Виробник: onsemi
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 197.53 грн |
| FDPC8012S |
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Виробник: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 117.42 грн |
| FDPC8012S |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 31951 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 278.39 грн |
| 10+ | 185.27 грн |
| 100+ | 135.91 грн |
| 500+ | 107.21 грн |
| 1000+ | 106.12 грн |
| NTTFS034N15MC |
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Виробник: onsemi
Description: PTNG 150V 34MOHM POWERCLIP33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 70µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Description: PTNG 150V 34MOHM POWERCLIP33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 70µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 55.33 грн |
| FDPC8011S-AU01 |
Виробник: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta), 900mW (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: Powerclip-33
Part Status: Active
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta), 900mW (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: Powerclip-33
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 104.86 грн |
| 1N5995BRL-ON |
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Виробник: onsemi
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO–204AH
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO–204AH
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.36 грн |
| NTPF190N65S3H |
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Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 352.74 грн |
| 50+ | 198.38 грн |
| 100+ | 191.36 грн |
| 500+ | 147.76 грн |
| 2SD1828 |
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Виробник: onsemi
Description: TRANS NPN DARL 100V 3A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 20MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS NPN DARL 100V 3A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 20MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
на замовлення 613 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 613+ | 44.29 грн |
| 2SJ650 |
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Виробник: onsemi
Description: MOSFET P-CH 60V 12A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220ML
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
Description: MOSFET P-CH 60V 12A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220ML
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
на замовлення 479100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 740+ | 32.25 грн |
| SBJ100-04J |
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Виробник: onsemi
Description: DIODE ARR SCHOTT 40V 10A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 10A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 606+ | 39.38 грн |
| SBT80-06J |
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Виробник: onsemi
Description: DIODE ARR SCHOTT 60V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE ARR SCHOTT 60V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 64270 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 370+ | 63.71 грн |
| SBT250-04J |
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Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 40V TO220ML
Description: DIODE ARRAY SCHOTTKY 40V TO220ML
на замовлення 10185 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 190+ | 136.03 грн |
| SBT80-04J |
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Виробник: onsemi
Description: DIODE ARR SCHOTT 40V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE ARR SCHOTT 40V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
на замовлення 25202 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 381+ | 62.14 грн |
| SBT80-10JS |
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Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
на замовлення 18753 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 386+ | 61.36 грн |
| LB1934T-TLM-E |
на замовлення 53682 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 173+ | 123.23 грн |
| LB1933M-TRM-E |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 1A 14MFPS
Packaging: Bulk
Package / Case: 14-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.2V ~ 7.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 1A
Technology: Bipolar
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 14-MFPS
Fault Protection: Over Temperature
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 1A 14MFPS
Packaging: Bulk
Package / Case: 14-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.2V ~ 7.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 1A
Technology: Bipolar
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 14-MFPS
Fault Protection: Over Temperature
Load Type: Inductive
на замовлення 35916 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 68+ | 310.90 грн |































