Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SE81NLV74HC4052ADTR2G | onsemi |
Description: 74HC4052 - ANAL MULTIPLEXERS/DEM Packaging: Bulk |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CS52843EDR14 | onsemi |
Description: SWITCHING CONTROLLER Packaging: Bulk Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FQP50N06L-EPKE0003 | onsemi |
Description: MOSFET N-CH 60V 65A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
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NCS21874DR2G | onsemi |
Description: IC OPAMP ZER-DRIFT 4CIRC 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 28µA Slew Rate: 0.1V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 60 pA Voltage - Input Offset: 6 µV Supplier Device Package: 14-SOIC Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 11 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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NCS21874DR2G | onsemi |
Description: IC OPAMP ZER-DRIFT 4CIRC 14SOIC Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 28µA Slew Rate: 0.1V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 60 pA Voltage - Input Offset: 6 µV Supplier Device Package: 14-SOIC Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 11 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 8283 шт: термін постачання 21-31 дні (днів) |
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AR0138AT4B00XUEA0-TRBR | onsemi | Description: 1MP 1/3 CIS SO |
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AR0138AT4R00XUEA1-DPBM | onsemi |
Description: 1MP 1/3 CIS SO Packaging: Tape & Reel (TR) Package / Case: 109-LFBGA Type: CMOS Pixel Size: 4.2µm x 4.2µm Active Pixel Array: 1288H x 968V Supplier Device Package: 109-IBGA (10x9) Frames per Second: 69 |
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AR0138AT4B00XUEA0-TPBR | onsemi | Description: 1MP 1/3 CIS SO |
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AR0138AT4R00XUEA1-DRBM | onsemi | Description: 1MP 1/3 CIS SO |
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AR0138AT4B00XUEA0-DPBR | onsemi | Description: 1MP 1/3 CIS SO |
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AR0138AT4B00XUEA0-DRBR | onsemi | Description: 1MP 1/3 CIS SO |
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AR0138AT4R00XUEA1-TPBM | onsemi | Description: 1MP 1/3 CIS SO |
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AR0138AT3R00XUEA0-DPBR | onsemi | Description: IMAGE SENSOR CMOS 1.2MP |
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AR0138AT3R00XUEA0-DRBR | onsemi | Description: IMAGE SENSOR CMOS 1.2MP |
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NCV866710D250R2G | onsemi |
Description: IC REG LINEAR 5V 150MA 14SOIC Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 35 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 14-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset Part Status: Obsolete PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 50 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5102 шт: термін постачання 21-31 дні (днів) |
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LA1773M-A-MPB-E-ON | onsemi | Description: TUNER IC |
на замовлення 4098 шт: термін постачання 21-31 дні (днів) |
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LA1773M-B-MPB-E | onsemi | Description: TUNER IC |
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NLAS7213MUTBG | onsemi |
Description: IC USB SWITCH DPST 8UQFN Packaging: Bulk Features: USB 2.0 Package / Case: 8-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 7.5Ohm -3db Bandwidth: 1.118GHz Supplier Device Package: 8-UQFN (1.5x1.5) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Switch Circuit: DPST Part Status: Active Number of Channels: 1 |
на замовлення 721196 шт: термін постачання 21-31 дні (днів) |
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FDMS3669S-SN00345 | onsemi | Description: MOSFET 2N-CH 30V |
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SZMMSZ4713T1G | onsemi |
Description: DIODE ZENER 30V 500MW SOD123 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 30 V Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 nA @ 22.8 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ4713T1G | onsemi |
Description: DIODE ZENER 30V 500MW SOD123 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 30 V Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 nA @ 22.8 V |
на замовлення 6076 шт: термін постачання 21-31 дні (днів) |
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NCP1077BAP065G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 68% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Supplier Device Package: 8-PDIP Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 8.4 V Part Status: Active Power (Watts): 31 W |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NCP1071P100G | onsemi |
Description: HIGH-VOLTAGE SWITCHER FOR LOW PO Packaging: Bulk Part Status: Active |
на замовлення 16400 шт: термін постачання 21-31 дні (днів) |
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NCP1070P100G | onsemi |
Description: HIGH-VOLTAGE SWITCHER REGULATOR Packaging: Bulk Part Status: Active |
на замовлення 4600 шт: термін постачання 21-31 дні (днів) |
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NCP1052ST44T3G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 77% Frequency - Switching: 44kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V Supplier Device Package: SOT-223 (TO-261) Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature Voltage - Start Up: 8.5 V Part Status: Obsolete Power (Watts): 40 W |
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NCV2333DMR2G | onsemi | Description: IC OPAMP ZERO-DRIFT 2 CIRC 8MSOP |
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CAT28LV64W-20 | onsemi |
Description: IC EEPROM 64KBIT 200NS 28SOIC Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: Parallel Access Time: 200 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 992 шт: термін постачання 21-31 дні (днів) |
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CAT93C56XI-T2 | onsemi |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Memory Interface: Microwire Memory Organization: 256 x 8, 128 x 16 DigiKey Programmable: Not Verified |
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CAT93C56XI-T2 | onsemi |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Memory Interface: Microwire Memory Organization: 256 x 8, 128 x 16 DigiKey Programmable: Not Verified |
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CAT93C56V | onsemi |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Memory Interface: Microwire Access Time: 250 ns Memory Organization: 128 x 16, 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 6573 шт: термін постачання 21-31 дні (днів) |
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CAT93C56VGI-1.8-T3 | onsemi |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Memory Interface: Microwire Access Time: 250 ns Memory Organization: 128 x 16, 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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CAT93C56SA-26545T | onsemi |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Memory Interface: Microwire Access Time: 250 ns Memory Organization: 128 x 16, 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FFB20UP20DN-SB82195-ON | onsemi |
Description: RECTIFIER, AVALANCHE, 1 PHASE, 2 Packaging: Bulk |
на замовлення 8450 шт: термін постачання 21-31 дні (днів) |
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FDMT800120DC-22897 | onsemi |
Description: FET 120V 4.2 MOHM PQFN88 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V |
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FDMT800100DC-22897 | onsemi |
Description: FET 100V 2.95 MOHM PQFN88 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
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NTMT061N60S5F | onsemi |
Description: SUPERFET5 FRFET, 61MOHM, PQFN88 Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 4.6mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V |
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SMUN5237DW1T1G | onsemi |
Description: TRANS 2NPN PREBIAS 0.187W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
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SMUN5237DW1T1G | onsemi |
Description: TRANS 2NPN PREBIAS 0.187W SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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SMUN5237DW1T1G | onsemi |
Description: TRANS 2NPN PREBIAS 0.187W SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2386 шт: термін постачання 21-31 дні (днів) |
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MUN5234T1G | onsemi | Description: MUN5234 - NPN BIPOLAR DIGITAL TR |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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SMUN5235T1G-M02 | onsemi | Description: NPN BIPOLAR DIGITAL TRANSISTOR ( |
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NSVMUN5237T1G | onsemi | Description: NSVMUN5237 - NPN BIPOLAR DIGITAL |
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MUN5236T1 | onsemi | Description: TRANS PREBIAS NPN 202MW SC70-3 |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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MUN5234T1 | onsemi | Description: TRANS PREBIAS NPN 202MW SC70-3 |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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MUN5237T1 | onsemi | Description: TRANS PREBIAS NPN 202MW SC70-3 |
на замовлення 42985 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5236T1G | onsemi | Description: TRANS PREBIAS NPN 50V SC70-3 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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MUN5236T1G | onsemi | Description: TRANS PREBIAS NPN 50V SC70-3 |
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MUN5236T1G | onsemi | Description: TRANS PREBIAS NPN 50V SC70-3 |
на замовлення 132000 шт: термін постачання 21-31 дні (днів) |
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MUN5233T1 | onsemi |
Description: TRANS BRT NPN 100MA 50V SOT-323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 310 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 146750 шт: термін постачання 21-31 дні (днів) |
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MUN5231T1 | onsemi | Description: TRANS PREBIAS NPN 202MW SC70-3 |
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MUN5237T1G | onsemi | Description: TRANS PREBIAS NPN 50V SC70-3 |
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MUN5238T1G | onsemi | Description: TRANS PREBIAS NPN 50V SC70-3 |
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MUN5237DW1T1G | onsemi | Description: TRANS BRT NPN DUAL 50V SC88-6 |
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BAS16SL | onsemi |
Description: DIODE GEN PURP 85V 150MA SOD923F Packaging: Bulk Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-923F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1483400 шт: термін постачання 21-31 дні (днів) |
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NTTFD9D0N06HLTWG | onsemi |
Description: MOSFET, POWER, 60V POWERTRENCH P Packaging: Tape & Reel (TR) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
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NTTFD9D0N06HLTWG | onsemi |
Description: MOSFET, POWER, 60V POWERTRENCH P Packaging: Cut Tape (CT) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
на замовлення 2984 шт: термін постачання 21-31 дні (днів) |
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SCV2903DR2G | onsemi | Description: IC COMPARATOR 8-SOIC |
товар відсутній |
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CAT25C08YI | onsemi |
Description: IC EEPROM 8KBIT SPI 10MHZ 8TSSOP Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 40 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 3197 шт: термін постачання 21-31 дні (днів) |
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CAT25C08VI-1.8TE13 | onsemi |
Description: IC EEPROM 8KBIT SPI 1MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Access Time: 250 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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CAT25C08LGI-26736 | onsemi |
Description: IC EEPROM 8KBIT SPI 10MHZ 8DIP Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 40 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 7767 шт: термін постачання 21-31 дні (днів) |
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SE81NLV74HC4052ADTR2G |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2664+ | 7.72 грн |
CS52843EDR14 |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
289+ | 81.32 грн |
FQP50N06L-EPKE0003 |
Виробник: onsemi
Description: MOSFET N-CH 60V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 60V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
товар відсутній
NCS21874DR2G |
Виробник: onsemi
Description: IC OPAMP ZER-DRIFT 4CIRC 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 14-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP ZER-DRIFT 4CIRC 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 14-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 33.02 грн |
5000+ | 30.6 грн |
NCS21874DR2G |
Виробник: onsemi
Description: IC OPAMP ZER-DRIFT 4CIRC 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 14-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP ZER-DRIFT 4CIRC 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 14-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 8283 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.1 грн |
10+ | 70.55 грн |
25+ | 66.92 грн |
100+ | 48.23 грн |
250+ | 42.63 грн |
500+ | 40.38 грн |
1000+ | 30.89 грн |
AR0138AT4R00XUEA1-DPBM |
Виробник: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 109-LFBGA
Type: CMOS
Pixel Size: 4.2µm x 4.2µm
Active Pixel Array: 1288H x 968V
Supplier Device Package: 109-IBGA (10x9)
Frames per Second: 69
Description: 1MP 1/3 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 109-LFBGA
Type: CMOS
Pixel Size: 4.2µm x 4.2µm
Active Pixel Array: 1288H x 968V
Supplier Device Package: 109-IBGA (10x9)
Frames per Second: 69
товар відсутній
NCV866710D250R2G |
Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 50 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 150MA 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 50 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
260+ | 80.76 грн |
LA1773M-A-MPB-E-ON |
Виробник: onsemi
Description: TUNER IC
Description: TUNER IC
на замовлення 4098 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
104+ | 229.19 грн |
NLAS7213MUTBG |
Виробник: onsemi
Description: IC USB SWITCH DPST 8UQFN
Packaging: Bulk
Features: USB 2.0
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 7.5Ohm
-3db Bandwidth: 1.118GHz
Supplier Device Package: 8-UQFN (1.5x1.5)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Switch Circuit: DPST
Part Status: Active
Number of Channels: 1
Description: IC USB SWITCH DPST 8UQFN
Packaging: Bulk
Features: USB 2.0
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 7.5Ohm
-3db Bandwidth: 1.118GHz
Supplier Device Package: 8-UQFN (1.5x1.5)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Switch Circuit: DPST
Part Status: Active
Number of Channels: 1
на замовлення 721196 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
693+ | 30.93 грн |
SZMMSZ4713T1G |
Виробник: onsemi
Description: DIODE ZENER 30V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 nA @ 22.8 V
Description: DIODE ZENER 30V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 nA @ 22.8 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.7 грн |
SZMMSZ4713T1G |
Виробник: onsemi
Description: DIODE ZENER 30V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 nA @ 22.8 V
Description: DIODE ZENER 30V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 nA @ 22.8 V
на замовлення 6076 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.02 грн |
17+ | 18.07 грн |
100+ | 10.25 грн |
500+ | 6.37 грн |
1000+ | 4.88 грн |
NCP1077BAP065G |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
281+ | 76.97 грн |
NCP1071P100G |
на замовлення 16400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
458+ | 47.17 грн |
NCP1070P100G |
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
582+ | 37.54 грн |
NCP1052ST44T3G |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 77%
Frequency - Switching: 44kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Supplier Device Package: SOT-223 (TO-261)
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature
Voltage - Start Up: 8.5 V
Part Status: Obsolete
Power (Watts): 40 W
Description: IC OFFLINE SWITCH FLYBACK SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 77%
Frequency - Switching: 44kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Supplier Device Package: SOT-223 (TO-261)
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature
Voltage - Start Up: 8.5 V
Part Status: Obsolete
Power (Watts): 40 W
товар відсутній
CAT28LV64W-20 |
Виробник: onsemi
Description: IC EEPROM 64KBIT 200NS 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT 200NS 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 992 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
52+ | 427.54 грн |
CAT93C56XI-T2 |
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
товар відсутній
CAT93C56XI-T2 |
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
товар відсутній
CAT93C56V |
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 250 ns
Memory Organization: 128 x 16, 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 250 ns
Memory Organization: 128 x 16, 256 x 8
DigiKey Programmable: Not Verified
на замовлення 6573 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2664+ | 7.72 грн |
CAT93C56VGI-1.8-T3 |
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 250 ns
Memory Organization: 128 x 16, 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 250 ns
Memory Organization: 128 x 16, 256 x 8
DigiKey Programmable: Not Verified
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2664+ | 7.72 грн |
CAT93C56SA-26545T |
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 250 ns
Memory Organization: 128 x 16, 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Memory Interface: Microwire
Access Time: 250 ns
Memory Organization: 128 x 16, 256 x 8
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4438+ | 4.92 грн |
FFB20UP20DN-SB82195-ON |
на замовлення 8450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
360+ | 61.42 грн |
FDMT800120DC-22897 |
Виробник: onsemi
Description: FET 120V 4.2 MOHM PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Description: FET 120V 4.2 MOHM PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
товар відсутній
FDMT800100DC-22897 |
Виробник: onsemi
Description: FET 100V 2.95 MOHM PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: FET 100V 2.95 MOHM PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
товар відсутній
NTMT061N60S5F |
Виробник: onsemi
Description: SUPERFET5 FRFET, 61MOHM, PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 4.6mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V
Description: SUPERFET5 FRFET, 61MOHM, PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 4.6mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V
товар відсутній
SMUN5237DW1T1G |
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMUN5237DW1T1G |
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 18.76 грн |
27+ | 11.22 грн |
100+ | 7.01 грн |
500+ | 4.84 грн |
1000+ | 4.27 грн |
SMUN5237DW1T1G |
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2386 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.18 грн |
15+ | 20.93 грн |
100+ | 13.25 грн |
500+ | 9.34 грн |
1000+ | 8.33 грн |
MUN5234T1G |
Виробник: onsemi
Description: MUN5234 - NPN BIPOLAR DIGITAL TR
Description: MUN5234 - NPN BIPOLAR DIGITAL TR
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11920+ | 2.31 грн |
MUN5236T1 |
Виробник: onsemi
Description: TRANS PREBIAS NPN 202MW SC70-3
Description: TRANS PREBIAS NPN 202MW SC70-3
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7212+ | 3.07 грн |
MUN5234T1 |
Виробник: onsemi
Description: TRANS PREBIAS NPN 202MW SC70-3
Description: TRANS PREBIAS NPN 202MW SC70-3
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7212+ | 3.07 грн |
MUN5237T1 |
Виробник: onsemi
Description: TRANS PREBIAS NPN 202MW SC70-3
Description: TRANS PREBIAS NPN 202MW SC70-3
на замовлення 42985 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7212+ | 3.07 грн |
NSVMUN5236T1G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Description: TRANS PREBIAS NPN 50V SC70-3
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8795+ | 2.31 грн |
MUN5236T1G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Description: TRANS PREBIAS NPN 50V SC70-3
на замовлення 132000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11920+ | 2.31 грн |
MUN5233T1 |
Виробник: onsemi
Description: TRANS BRT NPN 100MA 50V SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS BRT NPN 100MA 50V SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 146750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6662+ | 3.6 грн |
BAS16SL |
Виробник: onsemi
Description: DIODE GEN PURP 85V 150MA SOD923F
Packaging: Bulk
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-923F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE GEN PURP 85V 150MA SOD923F
Packaging: Bulk
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-923F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1483400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5323+ | 4.28 грн |
NTTFD9D0N06HLTWG |
Виробник: onsemi
Description: MOSFET, POWER, 60V POWERTRENCH P
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Part Status: Active
Description: MOSFET, POWER, 60V POWERTRENCH P
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Part Status: Active
товар відсутній
NTTFD9D0N06HLTWG |
Виробник: onsemi
Description: MOSFET, POWER, 60V POWERTRENCH P
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Part Status: Active
Description: MOSFET, POWER, 60V POWERTRENCH P
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Part Status: Active
на замовлення 2984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 221.27 грн |
10+ | 177.01 грн |
100+ | 140.87 грн |
500+ | 111.86 грн |
1000+ | 94.92 грн |
CAT25C08YI |
Виробник: onsemi
Description: IC EEPROM 8KBIT SPI 10MHZ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT SPI 10MHZ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 3197 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2049+ | 10.79 грн |
CAT25C08VI-1.8TE13 |
Виробник: onsemi
Description: IC EEPROM 8KBIT SPI 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Access Time: 250 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT SPI 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Access Time: 250 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2049+ | 10.79 грн |
CAT25C08LGI-26736 |
Виробник: onsemi
Description: IC EEPROM 8KBIT SPI 10MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT SPI 10MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 7767 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2049+ | 10.79 грн |