| Фото | Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||||||
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|   | NVLJWS022N06CLTAG | onsemi |  Description: T6 60V LL 2X2 WDFNW6 Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 77µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Qualification: AEC-Q101 | на замовлення 12000 шт:термін постачання 21-31 дні (днів) | 
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|   | NVMJD012N06CLTWG | onsemi |  Description: MOSFET 2N-CH 60V 11.5A 8LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 42W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
| 2SC4080D-TD-E | onsemi |  Description: 2SC4080 - NPN EPITAXIAL PLANAR S | на замовлення 18000 шт:термін постачання 21-31 дні (днів) | 
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|   | SS14FL | onsemi |  Description: DIODE SCHOTTKY 40V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.695 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 40 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | FDS86252 | onsemi |  Description: MOSFET N-CH 150V 4.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V | на замовлення 2500 шт:термін постачання 21-31 дні (днів) | 
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|   | FDS86252 | onsemi |  Description: MOSFET N-CH 150V 4.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V | на замовлення 5308 шт:термін постачання 21-31 дні (днів) | 
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|   | NTHD2110TT1G | onsemi |  Description: MOSFET P-CH 12V 4.5A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: ChipFET™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | FDA16N50-F109 | onsemi |  Description: MOSFET N-CH 500V 16.5A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V | на замовлення 338 шт:термін постачання 21-31 дні (днів) | 
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|   | SZBZX84B10LT1G | onsemi |  Description: DIODE ZENER 10V 250MW SOT23-3 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 | на замовлення 90000 шт:термін постачання 21-31 дні (днів) | 
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|   | SZBZX84B10LT1G | onsemi |  Description: DIODE ZENER 10V 250MW SOT23-3 Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 | на замовлення 92914 шт:термін постачання 21-31 дні (днів) | 
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|   | NCP12711ADNR2G | onsemi |  Description: 4-45 V INPUT CURRENT MODE ISOLAT Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 100kHz ~ 1MHz Topology: Flyback, Forward Converter Voltage - Supply (Vcc/Vdd): 4V ~ 45V Supplier Device Package: 10-MSOP Synchronous Rectifier: Yes Control Features: Frequency Control, Soft Start Output Phases: 1 Duty Cycle (Max): 94% Clock Sync: No Part Status: Active Number of Outputs: 1 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | NCP12711ADNR2G | onsemi |  Description: 4-45 V INPUT CURRENT MODE ISOLAT Packaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 100kHz ~ 1MHz Topology: Flyback, Forward Converter Voltage - Supply (Vcc/Vdd): 4V ~ 45V Supplier Device Package: 10-MSOP Synchronous Rectifier: Yes Control Features: Frequency Control, Soft Start Output Phases: 1 Duty Cycle (Max): 94% Clock Sync: No Part Status: Active Number of Outputs: 1 | на замовлення 3699 шт:термін постачання 21-31 дні (днів) | 
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| SBRS8190T3 | onsemi | Description: DIODE SCHOTTKY 90V 1A SMB | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | SBRS8190T3G-VF01 | onsemi |  Description: DIODE SCHOTTKY 90V 2A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 90 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | CS8191XDWFR20 | onsemi | Description: IC TRANSCEIVER 1/0 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 105°C Voltage - Supply: 8.5V ~ 15V Number of Drivers/Receivers: 1/0 Supplier Device Package: 20-SOIC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | SJ6522AG | onsemi | Description: BIP T03 PNP SPECIAL Packaging: Bulk Part Status: Active | на замовлення 801 шт:термін постачання 21-31 дні (днів) | 
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|   | FQP7P06 | onsemi |  Description: MOSFET P-CH 60V 7A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 410mOhm @ 3.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | BD17510STU | onsemi |  Description: TRANS NPN 45V 3A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 30 W | на замовлення 1830 шт:термін постачання 21-31 дні (днів) | 
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|   | MC100EL07DR2G | onsemi |  Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Logic Type: 2 Input XOR/XNOR Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Number of Inputs: 2 Schmitt Trigger Input: No Supplier Device Package: 8-SOIC Number of Circuits: 1 | на замовлення 7500 шт:термін постачання 21-31 дні (днів) | 
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|   | MC100EL07DR2G | onsemi |  Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Logic Type: 2 Input XOR/XNOR Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Number of Inputs: 2 Schmitt Trigger Input: No Supplier Device Package: 8-SOIC Number of Circuits: 1 | на замовлення 9999 шт:термін постачання 21-31 дні (днів) | 
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|   | MC33063AVPG | onsemi |  Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive or Negative Frequency - Switching: 100kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-PDIP Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V Part Status: Active | на замовлення 13973 шт:термін постачання 21-31 дні (днів) | 
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|   | 7WB3305CMX1TCG | onsemi |  Description: IC BUS SWITCH 1 X 1:1 8ULLGA | на замовлення 5990 шт:термін постачання 21-31 дні (днів) | 
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|   | KSC2785YBU | onsemi |  Description: TRANS NPN 50V 0.15A TO92S Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Short Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 300MHz Supplier Device Package: TO-92S Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | FDMF5071 | onsemi |  Description: SMART POWER STAGE (SPS) MODULES Packaging: Tape & Reel (TR) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: MOSFET Configuration: 1 Phase Current: 90 A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | FDMF5071 | onsemi |  Description: SMART POWER STAGE (SPS) MODULES Packaging: Cut Tape (CT) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: MOSFET Configuration: 1 Phase Current: 90 A | на замовлення 2807 шт:термін постачання 21-31 дні (днів) | 
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|   | LM2901NG | onsemi |  Description: IC COMPARATOR 4 GEN PUR 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Output Type: CMOS, Open-Collector, TTL Mounting Type: Through Hole Number of Elements: 4 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 105°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 14-PDIP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Obsolete | на замовлення 5254 шт:термін постачання 21-31 дні (днів) | 
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|   | ES2B | onsemi |  Description: DIODE STANDARD 100V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V | на замовлення 9000 шт:термін постачання 21-31 дні (днів) | 
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|   | ES2B | onsemi |  Description: DIODE STANDARD 100V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V | на замовлення 9872 шт:термін постачання 21-31 дні (днів) | 
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|   | FDS2170N3 | onsemi |  Description: MOSFET N-CH 200V 3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | FDS2170N3 | onsemi |  Description: MOSFET N-CH 200V 3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | SZCM1213A-02SR | onsemi |  Description: TVS DIODE 3.3VWM 10VC SOT143 Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: SOT-143 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes Grade: Automotive Part Status: Active Qualification: AEC-Q101 | на замовлення 3000 шт:термін постачання 21-31 дні (днів) | 
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|   | SZCM1213A-02SR | onsemi |  Description: TVS DIODE 3.3VWM 10VC SOT143 Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: SOT-143 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes Grade: Automotive Part Status: Active Qualification: AEC-Q101 | на замовлення 3198 шт:термін постачання 21-31 дні (днів) | 
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|   | NVMFWS027N10MCLT1G | onsemi |  Description: PTNG 100V LL SO8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 3.5W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Qualification: AEC-Q101 | на замовлення 6000 шт:термін постачання 21-31 дні (днів) | 
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|   | NVMFS4C308NWFT1G | onsemi |  Description: TRENCH 30V NCH Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 30.6W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | NVMFS5C404NWFET1G | onsemi |  Description: T6-40V N 0.7 MOHMS SL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Qualification: AEC-Q101 | на замовлення 1731000 шт:термін постачання 21-31 дні (днів) | 
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|   | NVMFWS021N10MCLT1G | onsemi |  Description: PTNG 100V LL SO8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 3.6W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 3V @ 42µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | NVMFS5831NLWFT1G | onsemi | Description: T2 40V LL, SINGLE NCH, SO-8FL 2. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 161A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4946 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
| NVMFWS004N10MCT1G | onsemi |  Description: MOSFET N-CH 100V 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V Power Dissipation (Max): 3.8W (Ta), 164W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|  | CAT93C57V-26528T | onsemi |  Description: IC EEPROM 2KBIT MICROWIRE 8SOIC | на замовлення 16000 шт:термін постачання 21-31 дні (днів) | 
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| CAT93C57S-TE13 | onsemi |  Description: IC EEPROM 2KBIT MICROWIRE 8SOIC | на замовлення 4000 шт:термін постачання 21-31 дні (днів) | 
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|   | NTD4809NT4G | onsemi |  Description: POWER FIELD-EFFECT TRANSISTOR, 9 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 1.4W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V | на замовлення 65285 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||||
| OPB865N55 | onsemi |  Description: SENSOR OPT PC PINS SLOT TYPE Package / Case: Module, PC Pins, Slot Type Mounting Type: Through Hole | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|  | NL17SZ08XV5T2G-L22087 | onsemi |  Description: IC GATE AND 1CH 2-INP SOT553 Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|  | NL17SZ08P5T5G-L22088 | onsemi |  Description: IC GATE AND 1CH 2-INP SOT953 Packaging: Tape & Reel (TR) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-953 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | MMSF2P02ER2 | onsemi |  Description: P-CHANNEL POWER MOSFET | на замовлення 94753 шт:термін постачання 21-31 дні (днів) | 
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|  | MMDF2P02HDR2G | onsemi |  Description: MOSFET 2P-CH 20V 3.3A 8-SOIC | на замовлення 809 шт:термін постачання 21-31 дні (днів) | 
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|  | MMDF2P02ER2 | onsemi |  Description: MOSFET PWR P-CH 25V 2.5A 8-SOIC | на замовлення 4104 шт:термін постачання 21-31 дні (днів) | 
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|   | FCH47N60 | onsemi |    Description: MOSFET N-CH 600V 47A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
| NGD18N45CLBT4G | onsemi |  Description: INSULATED GATE BIPOLAR TRANSISTO | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
|   | LE2432RDXATDG | onsemi | Description: IC EEPROM 32KBIT I2C 1MHZ 6WLCSP | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | LE2432RDXATDG | onsemi | Description: IC EEPROM 32KBIT I2C 1MHZ 6WLCSP | на замовлення 5000 шт:термін постачання 21-31 дні (днів) | 
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| LE2464RDXATDG | onsemi | Description: IC EEPROM 64KBIT I2C 1MHZ 6WLCSP Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 6-WLCSP (1.2x0.80) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||||
| LE2464RDXATDG | onsemi | Description: IC EEPROM 64KBIT I2C 1MHZ 6WLCSP Packaging: Bulk Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 6-WLCSP (1.2x0.80) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified | на замовлення 5000 шт:термін постачання 21-31 дні (днів) | 
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| LE2416RDXATDG | onsemi | Description: IC EEPROM 16KBIT I2C 1MHZ 6WLCSP Packaging: Bulk Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 6-WLCSP (1.2x0.80) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified | на замовлення 5000 шт:термін постачання 21-31 дні (днів) | 
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|   | NSVBCH807-40LT1G | onsemi |  Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Qualification: AEC-Q101 | на замовлення 60000 шт:термін постачання 21-31 дні (днів) | 
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|   | NSVBCH807-25LT1G | onsemi |  Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Qualification: AEC-Q101 | на замовлення 27000 шт:термін постачання 21-31 дні (днів) | 
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|   | MOC3042SR2VM | onsemi |  Description: OPTOISOLATOR 4.17KV TRIAC 6SMD Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Voltage - Isolation: 4170Vrms Approval Agency: IEC/EN/DIN, UL Current - Hold (Ih): 400µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: Yes Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA | на замовлення 10000 шт:термін постачання 21-31 дні (днів) | 
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|   | MOC3042SR2VM | onsemi |  Description: OPTOISOLATOR 4.17KV TRIAC 6SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Voltage - Isolation: 4170Vrms Approval Agency: IEC/EN/DIN, UL Current - Hold (Ih): 400µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: Yes Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA | на замовлення 10713 шт:термін постачання 21-31 дні (днів) | 
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|   | SMMBFJ175LT1G | onsemi |  Description: JFET P-CH 30V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Power - Max: 225 mW Resistance - RDS(On): 125 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||||
|   | SMMBFJ175LT1G | onsemi |  Description: JFET P-CH 30V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Power - Max: 225 mW Resistance - RDS(On): 125 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V Qualification: AEC-Q101 | на замовлення 1901 шт:термін постачання 21-31 дні (днів) | 
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| NVLJWS022N06CLTAG |  | 
Виробник: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
    Description: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 21.44 грн | 
| 6000+ | 19.02 грн | 
| 9000+ | 18.20 грн | 
| NVMJD012N06CLTWG |  | 
Виробник: onsemi
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 42W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
    Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 42W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| 2SC4080D-TD-E |  | 
Виробник: onsemi
Description: 2SC4080 - NPN EPITAXIAL PLANAR S
    Description: 2SC4080 - NPN EPITAXIAL PLANAR S
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1312+ | 17.37 грн | 
| SS14FL |  | 
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.695 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
    Description: DIODE SCHOTTKY 40V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.695 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| FDS86252 |  | 
Виробник: onsemi
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
    Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2500+ | 33.78 грн | 
| FDS86252 |  | 
Виробник: onsemi
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
    Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
на замовлення 5308 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3+ | 123.91 грн | 
| 10+ | 75.57 грн | 
| 100+ | 50.50 грн | 
| 500+ | 37.29 грн | 
| 1000+ | 34.04 грн | 
| NTHD2110TT1G |  | 
Виробник: onsemi
Description: MOSFET P-CH 12V 4.5A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V
    Description: MOSFET P-CH 12V 4.5A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V
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| FDA16N50-F109 |  | 
Виробник: onsemi
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
    Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
на замовлення 338 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 280.87 грн | 
| 30+ | 167.32 грн | 
| 120+ | 135.38 грн | 
| SZBZX84B10LT1G |  | 
Виробник: onsemi
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
    Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 1.42 грн | 
| 6000+ | 1.31 грн | 
| SZBZX84B10LT1G |  | 
Виробник: onsemi
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
    Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
на замовлення 92914 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 37+ | 9.09 грн | 
| 54+ | 5.97 грн | 
| 108+ | 2.96 грн | 
| 500+ | 2.70 грн | 
| 1000+ | 2.56 грн | 
| NCP12711ADNR2G |  | 
Виробник: onsemi
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
    Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
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| NCP12711ADNR2G |  | 
Виробник: onsemi
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
    Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
на замовлення 3699 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 181.74 грн | 
| 10+ | 110.41 грн | 
| 25+ | 93.39 грн | 
| 100+ | 69.62 грн | 
| 250+ | 60.76 грн | 
| 500+ | 55.31 грн | 
| 1000+ | 49.92 грн | 
| SBRS8190T3 | 
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 1A SMB
    Description: DIODE SCHOTTKY 90V 1A SMB
товару немає в наявності
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     од. на суму     грн.
| SBRS8190T3G-VF01 |  | 
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
    Description: DIODE SCHOTTKY 90V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
товару немає в наявності
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     од. на суму     грн.
| CS8191XDWFR20 | 
Виробник: onsemi
Description: IC TRANSCEIVER 1/0 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 8.5V ~ 15V
Number of Drivers/Receivers: 1/0
Supplier Device Package: 20-SOIC
    Description: IC TRANSCEIVER 1/0 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 8.5V ~ 15V
Number of Drivers/Receivers: 1/0
Supplier Device Package: 20-SOIC
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     од. на суму     грн.
| SJ6522AG | 
на замовлення 801 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 110+ | 212.70 грн | 
| FQP7P06 |  | 
Виробник: onsemi
Description: MOSFET P-CH 60V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
    Description: MOSFET P-CH 60V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
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| BD17510STU |  | 
Виробник: onsemi
Description: TRANS NPN 45V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 30 W
    Description: TRANS NPN 45V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 30 W
на замовлення 1830 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4+ | 85.91 грн | 
| 10+ | 51.71 грн | 
| 100+ | 34.05 грн | 
| 500+ | 24.83 грн | 
| MC100EL07DR2G |  | 
Виробник: onsemi
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
    Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2500+ | 237.51 грн | 
| MC100EL07DR2G |  | 
Виробник: onsemi
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
    Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
на замовлення 9999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 546.87 грн | 
| 10+ | 359.40 грн | 
| 25+ | 317.40 грн | 
| 100+ | 254.24 грн | 
| 250+ | 233.30 грн | 
| 500+ | 220.60 грн | 
| 1000+ | 211.12 грн | 
| MC33063AVPG |  | 
Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
    Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
на замовлення 13973 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 5+ | 71.04 грн | 
| 10+ | 48.84 грн | 
| 50+ | 41.22 грн | 
| 100+ | 36.45 грн | 
| 250+ | 34.10 грн | 
| 500+ | 32.69 грн | 
| 1000+ | 31.00 грн | 
| 2500+ | 29.79 грн | 
| 5000+ | 29.06 грн | 
| 7WB3305CMX1TCG |  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
    Description: IC BUS SWITCH 1 X 1:1 8ULLGA
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1603+ | 14.35 грн | 
| KSC2785YBU |  | 
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
    Description: TRANS NPN 50V 0.15A TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
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| FDMF5071 |  | 
Виробник: onsemi
Description: SMART POWER STAGE (SPS) MODULES
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 1 Phase
Current: 90 A
    Description: SMART POWER STAGE (SPS) MODULES
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 1 Phase
Current: 90 A
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| FDMF5071 |  | 
Виробник: onsemi
Description: SMART POWER STAGE (SPS) MODULES
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 1 Phase
Current: 90 A
    Description: SMART POWER STAGE (SPS) MODULES
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 1 Phase
Current: 90 A
на замовлення 2807 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 378.35 грн | 
| 10+ | 241.59 грн | 
| 100+ | 172.10 грн | 
| 500+ | 133.67 грн | 
| 1000+ | 124.81 грн | 
| LM2901NG |  | 
Виробник: onsemi
Description: IC COMPARATOR 4 GEN PUR 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: CMOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 14-PDIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Obsolete
    Description: IC COMPARATOR 4 GEN PUR 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: CMOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 14-PDIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Obsolete
на замовлення 5254 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1010+ | 21.25 грн | 
| ES2B |  | 
Виробник: onsemi
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
    Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 9.39 грн | 
| 6000+ | 8.87 грн | 
| 9000+ | 8.80 грн | 
| ES2B |  | 
Виробник: onsemi
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
    Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 9872 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 9+ | 40.48 грн | 
| 13+ | 25.69 грн | 
| 100+ | 19.85 грн | 
| 500+ | 14.12 грн | 
| 1000+ | 12.34 грн | 
| FDS2170N3 |  | 
Виробник: onsemi
Description: MOSFET N-CH 200V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
    Description: MOSFET N-CH 200V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
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| FDS2170N3 |  | 
Виробник: onsemi
Description: MOSFET N-CH 200V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
    Description: MOSFET N-CH 200V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
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| SZCM1213A-02SR |  | 
Виробник: onsemi
Description: TVS DIODE 3.3VWM 10VC SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
    Description: TVS DIODE 3.3VWM 10VC SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 17.69 грн | 
| SZCM1213A-02SR |  | 
Виробник: onsemi
Description: TVS DIODE 3.3VWM 10VC SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
    Description: TVS DIODE 3.3VWM 10VC SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3198 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 5+ | 72.70 грн | 
| 10+ | 43.59 грн | 
| 100+ | 28.38 грн | 
| 500+ | 20.48 грн | 
| 1000+ | 18.50 грн | 
| NVMFWS027N10MCLT1G |  | 
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
    Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1500+ | 25.46 грн | 
| 3000+ | 24.03 грн | 
| 4500+ | 23.60 грн | 
| NVMFS4C308NWFT1G |  | 
Виробник: onsemi
Description: TRENCH 30V NCH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Qualification: AEC-Q101
    Description: TRENCH 30V NCH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Qualification: AEC-Q101
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| NVMFS5C404NWFET1G |  | 
Виробник: onsemi
Description: T6-40V N 0.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Qualification: AEC-Q101
    Description: T6-40V N 0.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1731000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1500+ | 218.34 грн | 
| 3000+ | 197.98 грн | 
| NVMFWS021N10MCLT1G |  | 
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 42µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Qualification: AEC-Q101
    Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 42µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Qualification: AEC-Q101
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| NVMFS5831NLWFT1G | 
Виробник: onsemi
Description: T2 40V LL, SINGLE NCH, SO-8FL 2.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4946 pF @ 25 V
Qualification: AEC-Q101
    Description: T2 40V LL, SINGLE NCH, SO-8FL 2.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4946 pF @ 25 V
Qualification: AEC-Q101
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| NVMFWS004N10MCT1G |  | 
Виробник: onsemi
Description: MOSFET N-CH 100V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V
Power Dissipation (Max): 3.8W (Ta), 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
    Description: MOSFET N-CH 100V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V
Power Dissipation (Max): 3.8W (Ta), 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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| CAT93C57V-26528T |  | 
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
    Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1803+ | 12.84 грн | 
| CAT93C57S-TE13 |  | 
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
    Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1697+ | 13.59 грн | 
| NTD4809NT4G |  | 
Виробник: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
    Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
на замовлення 65285 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| OPB865N55 |  | 
Виробник: onsemi
Description: SENSOR OPT PC PINS SLOT TYPE
Package / Case: Module, PC Pins, Slot Type
Mounting Type: Through Hole
    Description: SENSOR OPT PC PINS SLOT TYPE
Package / Case: Module, PC Pins, Slot Type
Mounting Type: Through Hole
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| NL17SZ08XV5T2G-L22087 |  | 
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
    Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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| NL17SZ08P5T5G-L22088 |  | 
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
    Description: IC GATE AND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товару немає в наявності
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| MMSF2P02ER2 |  | 
Виробник: onsemi
Description: P-CHANNEL POWER MOSFET
    Description: P-CHANNEL POWER MOSFET
на замовлення 94753 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 962+ | 23.41 грн | 
| MMDF2P02HDR2G |  | 
Виробник: onsemi
Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
    Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
на замовлення 809 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 507+ | 44.55 грн | 
| MMDF2P02ER2 |  | 
Виробник: onsemi
Description: MOSFET PWR P-CH 25V 2.5A 8-SOIC
    Description: MOSFET PWR P-CH 25V 2.5A 8-SOIC
на замовлення 4104 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 507+ | 44.55 грн | 
| FCH47N60 |  |  | 
Виробник: onsemi
Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
    Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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| NGD18N45CLBT4G |  | 
Виробник: onsemi
Description: INSULATED GATE BIPOLAR TRANSISTO
    Description: INSULATED GATE BIPOLAR TRANSISTO
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| LE2432RDXATDG | 
Виробник: onsemi
Description: IC EEPROM 32KBIT I2C 1MHZ 6WLCSP
    Description: IC EEPROM 32KBIT I2C 1MHZ 6WLCSP
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| LE2432RDXATDG | 
Виробник: onsemi
Description: IC EEPROM 32KBIT I2C 1MHZ 6WLCSP
    Description: IC EEPROM 32KBIT I2C 1MHZ 6WLCSP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1548+ | 14.35 грн | 
| LE2464RDXATDG | 
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 6-WLCSP (1.2x0.80)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
    Description: IC EEPROM 64KBIT I2C 1MHZ 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 6-WLCSP (1.2x0.80)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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| LE2464RDXATDG | 
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 6WLCSP
Packaging: Bulk
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 6-WLCSP (1.2x0.80)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
    Description: IC EEPROM 64KBIT I2C 1MHZ 6WLCSP
Packaging: Bulk
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 6-WLCSP (1.2x0.80)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1424+ | 16.02 грн | 
| LE2416RDXATDG | 
Виробник: onsemi
Description: IC EEPROM 16KBIT I2C 1MHZ 6WLCSP
Packaging: Bulk
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 6-WLCSP (1.2x0.80)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
    Description: IC EEPROM 16KBIT I2C 1MHZ 6WLCSP
Packaging: Bulk
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 6-WLCSP (1.2x0.80)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1354+ | 16.78 грн | 
| NSVBCH807-40LT1G |  | 
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Qualification: AEC-Q101
    Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Qualification: AEC-Q101
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 3.97 грн | 
| 6000+ | 3.44 грн | 
| 9000+ | 3.24 грн | 
| 15000+ | 2.84 грн | 
| 21000+ | 2.71 грн | 
| 30000+ | 2.67 грн | 
| NSVBCH807-25LT1G |  | 
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Qualification: AEC-Q101
    Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 4.67 грн | 
| 6000+ | 4.05 грн | 
| 9000+ | 3.82 грн | 
| 15000+ | 3.34 грн | 
| 21000+ | 3.20 грн | 
| MOC3042SR2VM |  | 
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
    Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1000+ | 36.58 грн | 
| 2000+ | 33.33 грн | 
| 3000+ | 32.36 грн | 
| 5000+ | 29.33 грн | 
| 7000+ | 28.72 грн | 
| 10000+ | 28.12 грн | 
| MOC3042SR2VM |  | 
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
    Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 10713 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4+ | 88.39 грн | 
| 10+ | 59.74 грн | 
| 100+ | 44.31 грн | 
| 500+ | 35.16 грн | 
| SMMBFJ175LT1G |  | 
Виробник: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Qualification: AEC-Q101
    Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Qualification: AEC-Q101
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     од. на суму     грн.
| SMMBFJ175LT1G |  | 
Виробник: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Qualification: AEC-Q101
    Description: JFET P-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Qualification: AEC-Q101
на замовлення 1901 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 17+ | 19.83 грн | 
| 25+ | 13.21 грн | 
| 28+ | 11.74 грн | 
| 100+ | 9.46 грн | 
| 250+ | 8.72 грн | 
| 500+ | 8.27 грн | 
| 1000+ | 7.77 грн |