| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SURA8105T3G | onsemi |
Description: DIODEPackaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KA431SMF2TF | onsemi |
Description: IC VREF SHUNT 36V 2% SOT23F-3Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.5V Part Status: Active Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KA431SMF2TF | onsemi |
Description: IC VREF SHUNT 36V 2% SOT23F-3Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.5V Part Status: Active Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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NSVMMBTH81LT3G | onsemi |
Description: RF TRANS PNP 20V 600MHZ SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 225mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 600MHz Supplier Device Package: SOT-23-3 Part Status: Active |
на замовлення 38083 шт: термін постачання 21-31 дні (днів) |
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P6KE16ARL | onsemi |
Description: TVS ZENER UNIDIR 600W 16V AXIALPackaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTFS5824NLWFTAG | onsemi |
Description: MOSFET N-CH 60V 20A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FAM65CR51AXZ2 | onsemi |
Description: APM16 SF3 FRFET & SIC DIODE 51MOPackaging: Tube Package / Case: 12-SIP Exposed Pad, Formed Leads Mounting Type: Through Hole Type: MOSFET Configuration: 2 Independent Part Status: Active Current: 64 A Voltage: 650 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FAM65HR51XS2 | onsemi |
Description: APM16 CAA H-BRIDGE SF3 FRFET 51MPackaging: Tube Package / Case: 16-SIP Exposed Pad, Formed Leads Mounting Type: Through Hole Type: MOSFET Configuration: H-Bridge Inverter Part Status: Active Current: 64 A Voltage: 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FAM65HR51DS1 | onsemi |
Description: FAM65HR51DS1Packaging: Bulk Package / Case: 16-SSIP Exposed Pad, Formed Leads Mounting Type: Through Hole Type: MOSFET Configuration: 1 Phase Part Status: Active Current: 33 A Voltage: 650 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FAM65CR51AXZ1 | onsemi |
Description: APM16 SF3 FRFET & SIC DIODE 51MOPackaging: Tube Package / Case: 12-SIP Exposed Pad, Formed Leads Mounting Type: Through Hole Type: MOSFET Configuration: 2 Independent Part Status: Active Current: 64 A Voltage: 650 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FAM65HR51XS1 | onsemi |
Description: APM16 CAA H-BRIDGE SF3 FRFET 51MPackaging: Tube Package / Case: 16-SIP Exposed Pad, Formed Leads Mounting Type: Through Hole Type: MOSFET Configuration: H-Bridge Inverter Part Status: Active Current: 64 A Voltage: 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| ENGFAM65CR51AXZ1 | onsemi |
Description: IC Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ENGFAM65CR51AXZ2 | onsemi |
Description: IC Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NV25160DWHFT3G | onsemi |
Description: IC EEPROM 16KBIT SPI 10MHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 150°C (TA) Voltage - Supply: 2.5V ~ 5.5V Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 40 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NV25640DTHFT3G | onsemi |
Description: IC EEPROM 64KBIT SPI 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 150°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 40 ns Memory Organization: 8K x 8 Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NV25640DTHFT3G | onsemi |
Description: IC EEPROM 64KBIT SPI 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 150°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 40 ns Memory Organization: 8K x 8 Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 17148 шт: термін постачання 21-31 дні (днів) |
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N24S64BC4DYT3G | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSPPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.77x0.77) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 400 ns Memory Organization: 8K x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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N24S64BC4DYT3G | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSPPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.77x0.77) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 400 ns Memory Organization: 8K x 8 |
на замовлення 4185 шт: термін постачання 21-31 дні (днів) |
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CAT34C02YI-GT5A | onsemi |
Description: IC EEPROM 2KBIT I2C 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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CAT34C02YI-GT5A | onsemi |
Description: IC EEPROM 2KBIT I2C 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 34566 шт: термін постачання 21-31 дні (днів) |
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GBPC2504 | onsemi |
Description: BRIDGE RECT 1PHASE 400V 25A GBPCPackaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 62 шт: термін постачання 21-31 дні (днів) |
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| FFLMC74HC4060ADTR2G | onsemi |
Description: IC REG LINEAR Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RS1AFA | onsemi |
Description: DIODE STD 50V 800MA SOD123FAPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RS1AFA | onsemi |
Description: DIODE STD 50V 800MA SOD123FAPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4184 шт: термін постачання 21-31 дні (днів) |
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NTD4815NH-1G | onsemi |
Description: MOSFET N-CH 30V 6.9A/35A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD4815NHT4G | onsemi |
Description: MOSFET N-CH 30V 6.9A/35A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD4815NH-35G | onsemi |
Description: MOSFET N-CH 30V 6.9A/35A IPAKPackaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC54HC244AJ | onsemi |
Description: BUS DRIVER, HC/UH SERIESPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN7190MX-F085P | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOP Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 22V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 25ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 2.5V Current - Peak Output (Source, Sink): 4.5A, 4.5A Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDB035AN06A0-F085 | onsemi |
Description: MOSFET N-CH 60V 22A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDB035AN06A0-F085 | onsemi |
Description: MOSFET N-CH 60V 22A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV57084DR2G | onsemi |
Description: ISOLATED COMPACT IGBT GATE DRIVEPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7.5A, 7A Technology: Capacitive Coupling Current - Output High, Low: 7.5A, 7A, 7.5A, 7A Voltage - Isolation: 2500Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 30ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 0V ~ 30V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV57084DR2G | onsemi |
Description: ISOLATED COMPACT IGBT GATE DRIVEPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7.5A, 7A Technology: Capacitive Coupling Current - Output High, Low: 7.5A, 7A, 7.5A, 7A Voltage - Isolation: 2500Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 30ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 0V ~ 30V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FCPF11N60T | onsemi |
Description: MOSFET N-CH 600V 11A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V |
на замовлення 1907 шт: термін постачання 21-31 дні (днів) |
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MM3Z6V8T1G | onsemi |
Description: DIODE ZENER 6.8V 300MW SOD323Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 4 V |
на замовлення 46072 шт: термін постачання 21-31 дні (днів) |
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FDB0260N1007L | onsemi |
Description: MOSFET N-CH 100V 200A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FDB0260N1007L | onsemi |
Description: MOSFET N-CH 100V 200A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V |
на замовлення 1069 шт: термін постачання 21-31 дні (днів) |
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MM74HCT374MTCX | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 7.2mA, 7.2mA Trigger Type: Positive Edge Clock Frequency: 30 MHz Input Capacitance: 10 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF Part Status: Active Number of Bits per Element: 8 |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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MM74HCT374MTCX | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 7.2mA, 7.2mA Trigger Type: Positive Edge Clock Frequency: 30 MHz Input Capacitance: 10 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF Part Status: Active Number of Bits per Element: 8 |
на замовлення 19320 шт: термін постачання 21-31 дні (днів) |
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NCP1345Q02D1R2G | onsemi |
Description: HIGHLY INTEGRATED QUASI-RESONANTPackaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): No Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 38V Supplier Device Package: 9-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 17 V Control Features: Frequency Control, Soft Start Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP1345Q02D1R2G | onsemi |
Description: HIGHLY INTEGRATED QUASI-RESONANTPackaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): No Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 38V Supplier Device Package: 9-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 17 V Control Features: Frequency Control, Soft Start Part Status: Active |
на замовлення 2341 шт: термін постачання 21-31 дні (днів) |
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1N4755A-T50A | onsemi |
Description: DIODE ZENER 43V 1W DO41Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V |
на замовлення 4748 шт: термін постачання 21-31 дні (днів) |
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1N4755A-T50A | onsemi |
Description: DIODE ZENER 43V 1W DO41Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FOD3184 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 3807 шт: термін постачання 21-31 дні (днів) |
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NVMFS2D3P04M8LT1G | onsemi |
Description: MV8 P INITIAL PROGRAMPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 205W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 2.7mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2609 шт: термін постачання 21-31 дні (днів) |
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NVMFS9D6P04M8LT1G | onsemi |
Description: MV8 P-CH 40V SO-8FL PORTFOLIO EXPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NVMFS025P04M8LT1G | onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 255µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V |
на замовлення 1492 шт: термін постачання 21-31 дні (днів) |
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NVMFS014P04M8LT1G | onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 35605 шт: термін постачання 21-31 дні (днів) |
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NVMFWS014P04M8LT1G | onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1222 шт: термін постачання 21-31 дні (днів) |
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NTD5862NT4G | onsemi |
Description: POWER FIELD-EFFECT TRANSISTOR, 9Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FMBS2383 | onsemi |
Description: TRANS NPN 160V 0.8A SUPERSOT-6Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: SuperSOT™-6 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 630 mW |
на замовлення 2755 шт: термін постачання 21-31 дні (днів) |
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FQD12N20LTM-F085 | onsemi |
Description: MOSFET N-CH 200V 9A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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NC7SZ373P6X-L22347 | onsemi |
Description: IC D-TYPE TRANSP 1:1 SC-70-6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Tri-State Mounting Type: Surface Mount Circuit: 1:1 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Delay Time - Propagation: 2.6ns Supplier Device Package: SC-70-6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7SZ373P6X-L22347 | onsemi |
Description: IC D-TYPE TRANSP 1:1 SC-70-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Tri-State Mounting Type: Surface Mount Circuit: 1:1 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Delay Time - Propagation: 2.6ns Supplier Device Package: SC-70-6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7SZ373P6 | onsemi |
Description: IC D-TYPE TRANSP 1:1 SC-88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Tri-State Mounting Type: Surface Mount Circuit: 1:1 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Delay Time - Propagation: 2.6ns Supplier Device Package: SC-88 (SC-70-6) Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7SZ373L6X | onsemi |
Description: IC D-TYPE TRANSP 1:1 6-MICROPAKPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Tri-State Mounting Type: Surface Mount Circuit: 1:1 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Delay Time - Propagation: 2.6ns Supplier Device Package: 6-MicroPak Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SPC5748CK1MMJ6 | onsemi |
Description: MPC5748G - CALYPSO 6M-32 BIT, 6M Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NVTFS4C06NTAG | onsemi |
Description: MOSFET N-CH 30V 21A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C06NTAG | onsemi |
Description: MOSFET N-CH 30V 21A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ4V7T1G | onsemi |
Description: DIODE ZENER 4.7V 500MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| KA431SMF2TF |
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Виробник: onsemi
Description: IC VREF SHUNT 36V 2% SOT23F-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT 36V 2% SOT23F-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| KA431SMF2TF |
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Виробник: onsemi
Description: IC VREF SHUNT 36V 2% SOT23F-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT 36V 2% SOT23F-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.31 грн |
| 15+ | 22.80 грн |
| 25+ | 18.73 грн |
| NSVMMBTH81LT3G |
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Виробник: onsemi
Description: RF TRANS PNP 20V 600MHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Description: RF TRANS PNP 20V 600MHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: SOT-23-3
Part Status: Active
на замовлення 38083 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.71 грн |
| 18+ | 18.03 грн |
| 100+ | 14.34 грн |
| 500+ | 10.11 грн |
| 1000+ | 9.03 грн |
| 2000+ | 8.23 грн |
| 5000+ | 7.02 грн |
| P6KE16ARL |
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Виробник: onsemi
Description: TVS ZENER UNIDIR 600W 16V AXIAL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: TVS ZENER UNIDIR 600W 16V AXIAL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS5824NLWFTAG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 20A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| FAM65CR51AXZ2 |
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Виробник: onsemi
Description: APM16 SF3 FRFET & SIC DIODE 51MO
Packaging: Tube
Package / Case: 12-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 2 Independent
Part Status: Active
Current: 64 A
Voltage: 650 V
Description: APM16 SF3 FRFET & SIC DIODE 51MO
Packaging: Tube
Package / Case: 12-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 2 Independent
Part Status: Active
Current: 64 A
Voltage: 650 V
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| FAM65HR51XS2 |
![]() |
Виробник: onsemi
Description: APM16 CAA H-BRIDGE SF3 FRFET 51M
Packaging: Tube
Package / Case: 16-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge Inverter
Part Status: Active
Current: 64 A
Voltage: 650 V
Description: APM16 CAA H-BRIDGE SF3 FRFET 51M
Packaging: Tube
Package / Case: 16-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge Inverter
Part Status: Active
Current: 64 A
Voltage: 650 V
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| FAM65HR51DS1 |
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Виробник: onsemi
Description: FAM65HR51DS1
Packaging: Bulk
Package / Case: 16-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 1 Phase
Part Status: Active
Current: 33 A
Voltage: 650 V
Description: FAM65HR51DS1
Packaging: Bulk
Package / Case: 16-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 1 Phase
Part Status: Active
Current: 33 A
Voltage: 650 V
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| FAM65CR51AXZ1 |
![]() |
Виробник: onsemi
Description: APM16 SF3 FRFET & SIC DIODE 51MO
Packaging: Tube
Package / Case: 12-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 2 Independent
Part Status: Active
Current: 64 A
Voltage: 650 V
Description: APM16 SF3 FRFET & SIC DIODE 51MO
Packaging: Tube
Package / Case: 12-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 2 Independent
Part Status: Active
Current: 64 A
Voltage: 650 V
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| FAM65HR51XS1 |
![]() |
Виробник: onsemi
Description: APM16 CAA H-BRIDGE SF3 FRFET 51M
Packaging: Tube
Package / Case: 16-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge Inverter
Part Status: Active
Current: 64 A
Voltage: 650 V
Description: APM16 CAA H-BRIDGE SF3 FRFET 51M
Packaging: Tube
Package / Case: 16-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge Inverter
Part Status: Active
Current: 64 A
Voltage: 650 V
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| NV25160DWHFT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 16KBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 16KBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 26.77 грн |
| 6000+ | 24.87 грн |
| 9000+ | 24.35 грн |
| 15000+ | 22.25 грн |
| 21000+ | 21.86 грн |
| NV25640DTHFT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 8K x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 8K x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 29.61 грн |
| 6000+ | 27.81 грн |
| 9000+ | 27.40 грн |
| 15000+ | 25.23 грн |
| NV25640DTHFT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 8K x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 8K x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 17148 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.79 грн |
| 10+ | 34.37 грн |
| 25+ | 33.45 грн |
| 50+ | 30.72 грн |
| 100+ | 30.06 грн |
| 250+ | 29.17 грн |
| 500+ | 28.03 грн |
| 1000+ | 27.36 грн |
| N24S64BC4DYT3G |
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Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
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| N24S64BC4DYT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
на замовлення 4185 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.62 грн |
| 25+ | 19.15 грн |
| 50+ | 17.86 грн |
| 100+ | 15.86 грн |
| 250+ | 15.66 грн |
| 500+ | 15.17 грн |
| 1000+ | 14.77 грн |
| CAT34C02YI-GT5A |
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Виробник: onsemi
Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 14.14 грн |
| 10000+ | 13.31 грн |
| CAT34C02YI-GT5A |
![]() |
Виробник: onsemi
Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
на замовлення 34566 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 14+ | 24.10 грн |
| 25+ | 23.00 грн |
| 50+ | 20.82 грн |
| 100+ | 20.10 грн |
| 250+ | 19.17 грн |
| 500+ | 18.19 грн |
| 1000+ | 17.55 грн |
| GBPC2504 |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 400V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 486.23 грн |
| 50+ | 249.57 грн |
| RS1AFA |
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Виробник: onsemi
Description: DIODE STD 50V 800MA SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STD 50V 800MA SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.98 грн |
| RS1AFA |
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Виробник: onsemi
Description: DIODE STD 50V 800MA SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STD 50V 800MA SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4184 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.03 грн |
| 20+ | 16.66 грн |
| 100+ | 10.45 грн |
| 500+ | 8.90 грн |
| 1000+ | 8.31 грн |
| NTD4815NH-1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
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| NTD4815NHT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 6.9A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
Description: MOSFET N-CH 30V 6.9A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
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| NTD4815NH-35G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
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| FAN7190MX-F085P |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| FDB035AN06A0-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Description: MOSFET N-CH 60V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
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| FDB035AN06A0-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Description: MOSFET N-CH 60V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
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| NCV57084DR2G |
![]() |
Виробник: onsemi
Description: ISOLATED COMPACT IGBT GATE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Description: ISOLATED COMPACT IGBT GATE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 108.16 грн |
| NCV57084DR2G |
![]() |
Виробник: onsemi
Description: ISOLATED COMPACT IGBT GATE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Description: ISOLATED COMPACT IGBT GATE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 235.98 грн |
| 10+ | 204.43 грн |
| 25+ | 192.85 грн |
| 100+ | 154.21 грн |
| 250+ | 144.80 грн |
| 500+ | 126.70 грн |
| 1000+ | 103.26 грн |
| FCPF11N60T |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
на замовлення 1907 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 325.83 грн |
| 50+ | 161.33 грн |
| 100+ | 146.60 грн |
| 500+ | 113.35 грн |
| 1000+ | 105.57 грн |
| MM3Z6V8T1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 6.8V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Description: DIODE ZENER 6.8V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
на замовлення 46072 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.60 грн |
| 44+ | 7.36 грн |
| 100+ | 4.54 грн |
| 500+ | 3.09 грн |
| 1000+ | 2.71 грн |
| FDB0260N1007L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 363.40 грн |
| FDB0260N1007L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
на замовлення 1069 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 772.60 грн |
| 10+ | 514.08 грн |
| 100+ | 428.33 грн |
| MM74HCT374MTCX |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 23.86 грн |
| 5000+ | 21.12 грн |
| 7500+ | 20.17 грн |
| 12500+ | 17.94 грн |
| 17500+ | 17.81 грн |
| MM74HCT374MTCX |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 19320 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.93 грн |
| 10+ | 58.47 грн |
| 25+ | 48.68 грн |
| 100+ | 35.30 грн |
| 250+ | 30.18 грн |
| 500+ | 27.04 грн |
| 1000+ | 24.00 грн |
| NCP1345Q02D1R2G |
![]() |
Виробник: onsemi
Description: HIGHLY INTEGRATED QUASI-RESONANT
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Description: HIGHLY INTEGRATED QUASI-RESONANT
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NCP1345Q02D1R2G |
![]() |
Виробник: onsemi
Description: HIGHLY INTEGRATED QUASI-RESONANT
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Description: HIGHLY INTEGRATED QUASI-RESONANT
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
на замовлення 2341 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.32 грн |
| 10+ | 103.27 грн |
| 25+ | 87.18 грн |
| 100+ | 64.75 грн |
| 250+ | 56.37 грн |
| 500+ | 51.22 грн |
| 1000+ | 46.13 грн |
| 1N4755A-T50A |
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Виробник: onsemi
Description: DIODE ZENER 43V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
Description: DIODE ZENER 43V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
на замовлення 4748 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.80 грн |
| 32+ | 10.11 грн |
| 100+ | 5.45 грн |
| 500+ | 4.43 грн |
| 1000+ | 3.91 грн |
| 1N4755A-T50A |
![]() |
Виробник: onsemi
Description: DIODE ZENER 43V 1W DO41
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
Description: DIODE ZENER 43V 1W DO41
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.84 грн |
| 6000+ | 2.86 грн |
| FOD3184 |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 3807 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.34 грн |
| 50+ | 127.64 грн |
| 100+ | 119.24 грн |
| 500+ | 97.87 грн |
| 1000+ | 93.30 грн |
| 2000+ | 89.44 грн |
| NVMFS2D3P04M8LT1G |
![]() |
Виробник: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2609 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 296.44 грн |
| 10+ | 213.09 грн |
| 100+ | 165.47 грн |
| 500+ | 134.55 грн |
| NVMFS9D6P04M8LT1G |
![]() |
Виробник: onsemi
Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 41.81 грн |
| 3000+ | 39.18 грн |
| NVMFS025P04M8LT1G |
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Виробник: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.42 грн |
| 10+ | 63.56 грн |
| 100+ | 44.03 грн |
| 500+ | 34.53 грн |
| NVMFS014P04M8LT1G |
![]() |
Виробник: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 35605 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.17 грн |
| 10+ | 69.79 грн |
| 100+ | 47.97 грн |
| 500+ | 35.37 грн |
| NVMFWS014P04M8LT1G |
![]() |
Виробник: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1222 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.06 грн |
| 10+ | 57.50 грн |
| 100+ | 44.74 грн |
| 500+ | 35.59 грн |
| NTD5862NT4G |
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Виробник: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FMBS2383 |
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Виробник: onsemi
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 630 mW
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 630 mW
на замовлення 2755 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1285+ | 16.98 грн |
| FQD12N20LTM-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 37.75 грн |
| 5000+ | 34.09 грн |
| NC7SZ373P6X-L22347 |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 1:1 SC-70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-70-6
Part Status: Active
Description: IC D-TYPE TRANSP 1:1 SC-70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-70-6
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NC7SZ373P6X-L22347 |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP 1:1 SC-70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-70-6
Part Status: Active
Description: IC D-TYPE TRANSP 1:1 SC-70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-70-6
Part Status: Active
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| NC7SZ373P6 |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 1:1 SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Discontinued at Digi-Key
Description: IC D-TYPE TRANSP 1:1 SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Discontinued at Digi-Key
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| NC7SZ373L6X |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 1:1 6-MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Description: IC D-TYPE TRANSP 1:1 6-MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
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В кошику
од. на суму грн.
| NVTFS4C06NTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 44.13 грн |
| NVTFS4C06NTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.01 грн |
| 10+ | 85.56 грн |
| 100+ | 60.51 грн |
| 500+ | 46.30 грн |
| SZMMSZ4V7T1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.95 грн |
| 6000+ | 3.73 грн |
| 9000+ | 3.72 грн |





























