Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103035) > Сторінка 1015 з 1718

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YQ5LAM10CTFTR YQ5LAM10CTFTR Rohm Semiconductor datasheet?p=YQ5LAM10CTF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+20.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
YQ5LAM10CTFTR YQ5LAM10CTFTR Rohm Semiconductor datasheet?p=YQ5LAM10CTF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
6+53.20 грн
10+45.20 грн
25+42.46 грн
100+32.52 грн
250+30.21 грн
500+25.71 грн
1000+20.23 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
YQ5LAM10ETFTR YQ5LAM10ETFTR Rohm Semiconductor datasheet?p=YQ5LAM10ETF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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YQ5LAM10ETFTR YQ5LAM10ETFTR Rohm Semiconductor datasheet?p=YQ5LAM10ETF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
на замовлення 2632 шт:
термін постачання 21-31 дні (днів)
3+112.66 грн
10+66.67 грн
25+55.72 грн
100+40.68 грн
250+34.97 грн
500+31.46 грн
1000+28.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PDZVTR4.3A PDZVTR4.3A Rohm Semiconductor Marking_PMDTM-e.pdf Description: DIODE ZENER 4.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.25 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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PDZVTR4.3A PDZVTR4.3A Rohm Semiconductor Marking_PMDTM-e.pdf Description: DIODE ZENER 4.25V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.25 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
10+32.08 грн
13+23.73 грн
100+14.22 грн
500+12.36 грн
1000+8.41 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ESR01MZPJ682 ESR01MZPJ682 Rohm Semiconductor esr-e.pdf Description: RES 6.8K OHM 5% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.8 kOhms
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ESR01MZPJ682 ESR01MZPJ682 Rohm Semiconductor esr-e.pdf Description: RES 6.8K OHM 5% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.8 kOhms
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)
22+14.86 грн
43+7.16 грн
53+5.73 грн
62+4.61 грн
100+3.98 грн
250+3.36 грн
500+3.03 грн
1000+2.68 грн
5000+2.23 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
ESR10EZPD6801 ESR10EZPD6801 Rohm Semiconductor esr-e.pdf Description: RES 6.8K OHM 0.5% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.8 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+2.72 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR10EZPD6801 ESR10EZPD6801 Rohm Semiconductor esr-e.pdf Description: RES 6.8K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.8 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
19+17.21 грн
35+8.74 грн
51+5.98 грн
100+4.84 грн
500+3.55 грн
1000+3.15 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
SDR10EZPF62R0 SDR10EZPF62R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 62 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+2.76 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SDR10EZPF62R0 SDR10EZPF62R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 62 Ohms
на замовлення 11835 шт:
термін постачання 21-31 дні (днів)
20+15.65 грн
39+7.91 грн
49+6.24 грн
57+5.02 грн
100+4.36 грн
250+3.68 грн
500+3.24 грн
1000+2.94 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SIM-22ST Rohm Semiconductor datasheet?p=SIM-22ST&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: GAAS INFRARED LIGHT EMITTING DIO
Packaging: Bulk
Package / Case: Radial
Wavelength: 950nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Side View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Viewing Angle: 60°
Current - DC Forward (If) (Max): 50mA
Radiant Intensity (Ie) Min @ If: 0.8mW/sr @ 10mA
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SDR03EZPF2R40 SDR03EZPF2R40 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+0.55 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SDR03EZPF2R40 SDR03EZPF2R40 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 Ohms
на замовлення 9770 шт:
термін постачання 21-31 дні (днів)
25+12.52 грн
50+6.03 грн
75+4.05 грн
100+3.25 грн
500+2.33 грн
1000+2.05 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SFR10EZPF3002 SFR10EZPF3002 Rohm Semiconductor sfr-e.pdf Description: RES 30K OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 30 kOhms
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SFR10EZPF3002 SFR10EZPF3002 Rohm Semiconductor sfr-e.pdf Description: RES 30K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 30 kOhms
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)
27+11.73 грн
56+5.42 грн
71+4.25 грн
85+3.35 грн
111+2.55 грн
250+2.23 грн
500+2.06 грн
1000+1.84 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
RB161SS-20LDT2R Rohm Semiconductor Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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RB160SS-40HWT2R Rohm Semiconductor Description: DIODE SCHOTTKY 40V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RB160SS-407HWT2R Rohm Semiconductor Description: DIODE SCHOTTKY 40V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RB161SS-30T2R Rohm Semiconductor rb161ss-30t2r-e.pdf Description: DIODE SCHOTTKY 30V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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RB561SS-40T2R Rohm Semiconductor datasheet?p=RB561SS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 500MA KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 500 mA
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
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RB160SS-40TR Rohm Semiconductor Description: DIODE SCHOTTKY 40V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RB560SS-40T2R Rohm Semiconductor datasheet?p=RB560SS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 500MA KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
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RB160SS-30T2R Rohm Semiconductor datasheet?p=RB160SS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
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BD733U2EFJ-CE2 BD733U2EFJ-CE2 Rohm Semiconductor datasheet?p=BD733U2EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 200MA 3.3V OUTPUT, ULTRA LOW IQ,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 15 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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BD733U2EFJ-CE2 BD733U2EFJ-CE2 Rohm Semiconductor datasheet?p=BD733U2EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 200MA 3.3V OUTPUT, ULTRA LOW IQ,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 15 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
3+132.21 грн
10+114.51 грн
25+108.03 грн
100+86.37 грн
250+81.10 грн
500+70.96 грн
1000+57.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
YQ3LAM10DTR YQ3LAM10DTR Rohm Semiconductor datasheet?p=YQ3LAM10D&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRENCH MOS STRUCTURE, 100V, 3A
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
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YQ3LAM10DTR YQ3LAM10DTR Rohm Semiconductor datasheet?p=YQ3LAM10D&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRENCH MOS STRUCTURE, 100V, 3A
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
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RSX205LAM30TFTR RSX205LAM30TFTR Rohm Semiconductor datasheet?p=RSX205LAM30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
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RSX205LAM30TFTR RSX205LAM30TFTR Rohm Semiconductor datasheet?p=RSX205LAM30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
на замовлення 2665 шт:
термін постачання 21-31 дні (днів)
9+35.20 грн
12+26.22 грн
100+15.71 грн
500+13.65 грн
1000+9.28 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
RSX205L-30TFTE25 RSX205L-30TFTE25 Rohm Semiconductor rsx205l-30tfte25-e.pdf Description: 30V 2A, SINGLE, DO-214AC, HIGHLY
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
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RSX205L-30TFTE25 RSX205L-30TFTE25 Rohm Semiconductor rsx205l-30tfte25-e.pdf Description: 30V 2A, SINGLE, DO-214AC, HIGHLY
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
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RSX205L-30TE25 RSX205L-30TE25 Rohm Semiconductor Description: DIODE SCHOTTKY 30V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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MCH183FN224ZK MCH183FN224ZK Rohm Semiconductor mch18.pdf Description: CAP CER 0.22UF 16V Y5V 0603
Packaging: Tape & Reel (TR)
Tolerance: -20%, +80%
Voltage - Rated: 16V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: Y5V (F)
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -30°C ~ 85°C
Applications: General Purpose
Thickness (Max): 0.035" (0.90mm)
Capacitance: 0.22 µF
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MCH185CN152KK MCH185CN152KK Rohm Semiconductor mch18.pdf Description: CAP CER 1500PF 50V X7R 0603
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.035" (0.90mm)
Capacitance: 1500 pF
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MCH185CN152KK MCH185CN152KK Rohm Semiconductor mch18.pdf Description: CAP CER 1500PF 50V X7R 0603
Packaging: Cut Tape (CT)
Tolerance: ±10%
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.035" (0.90mm)
Capacitance: 1500 pF
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MCH032CN152KK MCH032CN152KK Rohm Semiconductor MCH03.pdf Description: CAP CER 1500PF 25V X7R 0201
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 25V
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.012" (0.30mm)
Capacitance: 1500 pF
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MCH032CN152KK MCH032CN152KK Rohm Semiconductor MCH03.pdf Description: CAP CER 1500PF 25V X7R 0201
Packaging: Cut Tape (CT)
Tolerance: ±10%
Voltage - Rated: 25V
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.012" (0.30mm)
Capacitance: 1500 pF
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BR93G66FJ-3GTE2 BR93G66FJ-3GTE2 Rohm Semiconductor datasheet?p=BR93G66FJ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT SPI 3MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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BR93G66FJ-3GTE2 BR93G66FJ-3GTE2 Rohm Semiconductor datasheet?p=BR93G66FJ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT SPI 3MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
13+23.20 грн
25+21.55 грн
50+20.12 грн
100+17.87 грн
250+17.64 грн
500+17.09 грн
1000+16.63 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BR93G66F-3GTE2 BR93G66F-3GTE2 Rohm Semiconductor datasheet?p=BR93G66F-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT SPI 3MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
BR93G66F-3GTE2 BR93G66F-3GTE2 Rohm Semiconductor datasheet?p=BR93G66F-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT SPI 3MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
8+43.03 грн
10+37.97 грн
25+37.49 грн
50+34.97 грн
100+31.27 грн
250+31.00 грн
500+30.04 грн
1000+28.97 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BR93G66F-3AGTE2 BR93G66F-3AGTE2 Rohm Semiconductor datasheet?p=BR93G66F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT SPI 3MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
BR93G66F-3AGTE2 BR93G66F-3AGTE2 Rohm Semiconductor datasheet?p=BR93G66F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT SPI 3MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
на замовлення 1259 шт:
термін постачання 21-31 дні (днів)
8+43.03 грн
10+37.82 грн
25+37.34 грн
50+34.84 грн
100+31.14 грн
250+30.88 грн
500+29.93 грн
1000+28.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
GMR100HTBFA10L0 GMR100HTBFA10L0 Rohm Semiconductor gmr-e.pdf Description: RES 0.01 OHM 1% 7W 2512
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 10 mOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+44.14 грн
4000+39.81 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
GMR100HTBFA10L0 GMR100HTBFA10L0 Rohm Semiconductor gmr-e.pdf Description: RES 0.01 OHM 1% 7W 2512
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 10 mOhms
на замовлення 5916 шт:
термін постачання 21-31 дні (днів)
3+136.13 грн
10+86.86 грн
25+74.79 грн
50+63.11 грн
100+57.09 грн
250+50.50 грн
500+45.61 грн
1000+42.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GMR100HJBFIR022 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 22M HIGH P
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 mOhms
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GMR100HJBFIR022 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 22M HIGH P
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 mOhms
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GMR100HJBFMR033 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 33M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 33 mOhms
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GMR100HJBFMR033 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 33M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 33 mOhms
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GMR100HJBFA10L0 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 10M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 10 mOhms
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GMR100HJBFA10L0 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 10M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 10 mOhms
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GMR100HJBFHR020 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 20M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 20 mOhms
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GMR100HJBFHR020 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 20M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 20 mOhms
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GMR100HJBFER015 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 15M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 MOhms
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GMR100HJBFER015 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 15M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 MOhms
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GMR100HJBFQR047 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 47M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 47 mOhms
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GMR100HJBFQR047 Rohm Semiconductor Description: 6432 (2512) SIZE, 7W, 47M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 47 mOhms
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LTR100JZPJ473 LTR100JZPJ473 Rohm Semiconductor ltr-e.pdf Description: RES SMD 47K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 47 kOhms
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YQ5LAM10CTFTR datasheet?p=YQ5LAM10CTF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
YQ5LAM10CTFTR
Виробник: Rohm Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+20.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
YQ5LAM10CTFTR datasheet?p=YQ5LAM10CTF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
YQ5LAM10CTFTR
Виробник: Rohm Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+53.20 грн
10+45.20 грн
25+42.46 грн
100+32.52 грн
250+30.21 грн
500+25.71 грн
1000+20.23 грн
Мінімальне замовлення: 6
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YQ5LAM10ETFTR datasheet?p=YQ5LAM10ETF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
YQ5LAM10ETFTR
Виробник: Rohm Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
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YQ5LAM10ETFTR datasheet?p=YQ5LAM10ETF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
YQ5LAM10ETFTR
Виробник: Rohm Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 5A
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
на замовлення 2632 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.66 грн
10+66.67 грн
25+55.72 грн
100+40.68 грн
250+34.97 грн
500+31.46 грн
1000+28.05 грн
Мінімальне замовлення: 3
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PDZVTR4.3A Marking_PMDTM-e.pdf
PDZVTR4.3A
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.25 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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PDZVTR4.3A Marking_PMDTM-e.pdf
PDZVTR4.3A
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.25V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.25 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.08 грн
13+23.73 грн
100+14.22 грн
500+12.36 грн
1000+8.41 грн
Мінімальне замовлення: 10
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ESR01MZPJ682 esr-e.pdf
ESR01MZPJ682
Виробник: Rohm Semiconductor
Description: RES 6.8K OHM 5% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.8 kOhms
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ESR01MZPJ682 esr-e.pdf
ESR01MZPJ682
Виробник: Rohm Semiconductor
Description: RES 6.8K OHM 5% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.8 kOhms
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+14.86 грн
43+7.16 грн
53+5.73 грн
62+4.61 грн
100+3.98 грн
250+3.36 грн
500+3.03 грн
1000+2.68 грн
5000+2.23 грн
Мінімальне замовлення: 22
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ESR10EZPD6801 esr-e.pdf
ESR10EZPD6801
Виробник: Rohm Semiconductor
Description: RES 6.8K OHM 0.5% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.8 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+2.72 грн
Мінімальне замовлення: 5000
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ESR10EZPD6801 esr-e.pdf
ESR10EZPD6801
Виробник: Rohm Semiconductor
Description: RES 6.8K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.8 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.21 грн
35+8.74 грн
51+5.98 грн
100+4.84 грн
500+3.55 грн
1000+3.15 грн
Мінімальне замовлення: 19
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SDR10EZPF62R0 sdr-e.pdf
SDR10EZPF62R0
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 62 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+2.76 грн
Мінімальне замовлення: 5000
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SDR10EZPF62R0 sdr-e.pdf
SDR10EZPF62R0
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 62 Ohms
на замовлення 11835 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.65 грн
39+7.91 грн
49+6.24 грн
57+5.02 грн
100+4.36 грн
250+3.68 грн
500+3.24 грн
1000+2.94 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SIM-22ST datasheet?p=SIM-22ST&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: Rohm Semiconductor
Description: GAAS INFRARED LIGHT EMITTING DIO
Packaging: Bulk
Package / Case: Radial
Wavelength: 950nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Side View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Viewing Angle: 60°
Current - DC Forward (If) (Max): 50mA
Radiant Intensity (Ie) Min @ If: 0.8mW/sr @ 10mA
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SDR03EZPF2R40 sdr-e.pdf
SDR03EZPF2R40
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+0.55 грн
Мінімальне замовлення: 5000
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SDR03EZPF2R40 sdr-e.pdf
SDR03EZPF2R40
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 Ohms
на замовлення 9770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.52 грн
50+6.03 грн
75+4.05 грн
100+3.25 грн
500+2.33 грн
1000+2.05 грн
Мінімальне замовлення: 25
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SFR10EZPF3002 sfr-e.pdf
SFR10EZPF3002
Виробник: Rohm Semiconductor
Description: RES 30K OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 30 kOhms
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SFR10EZPF3002 sfr-e.pdf
SFR10EZPF3002
Виробник: Rohm Semiconductor
Description: RES 30K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 30 kOhms
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.73 грн
56+5.42 грн
71+4.25 грн
85+3.35 грн
111+2.55 грн
250+2.23 грн
500+2.06 грн
1000+1.84 грн
Мінімальне замовлення: 27
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RB161SS-20LDT2R
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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RB160SS-40HWT2R
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RB160SS-407HWT2R
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RB161SS-30T2R rb161ss-30t2r-e.pdf
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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RB561SS-40T2R datasheet?p=RB561SS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 500 mA
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
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RB160SS-40TR
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RB560SS-40T2R datasheet?p=RB560SS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
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RB160SS-30T2R datasheet?p=RB160SS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
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BD733U2EFJ-CE2 datasheet?p=BD733U2EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733U2EFJ-CE2
Виробник: Rohm Semiconductor
Description: 200MA 3.3V OUTPUT, ULTRA LOW IQ,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 15 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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BD733U2EFJ-CE2 datasheet?p=BD733U2EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD733U2EFJ-CE2
Виробник: Rohm Semiconductor
Description: 200MA 3.3V OUTPUT, ULTRA LOW IQ,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 15 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.21 грн
10+114.51 грн
25+108.03 грн
100+86.37 грн
250+81.10 грн
500+70.96 грн
1000+57.84 грн
Мінімальне замовлення: 3
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YQ3LAM10DTR datasheet?p=YQ3LAM10D&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
YQ3LAM10DTR
Виробник: Rohm Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 3A
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
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YQ3LAM10DTR datasheet?p=YQ3LAM10D&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
YQ3LAM10DTR
Виробник: Rohm Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 3A
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
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RSX205LAM30TFTR datasheet?p=RSX205LAM30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSX205LAM30TFTR
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
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RSX205LAM30TFTR datasheet?p=RSX205LAM30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSX205LAM30TFTR
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
на замовлення 2665 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+35.20 грн
12+26.22 грн
100+15.71 грн
500+13.65 грн
1000+9.28 грн
Мінімальне замовлення: 9
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RSX205L-30TFTE25 rsx205l-30tfte25-e.pdf
RSX205L-30TFTE25
Виробник: Rohm Semiconductor
Description: 30V 2A, SINGLE, DO-214AC, HIGHLY
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
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RSX205L-30TFTE25 rsx205l-30tfte25-e.pdf
RSX205L-30TFTE25
Виробник: Rohm Semiconductor
Description: 30V 2A, SINGLE, DO-214AC, HIGHLY
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
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RSX205L-30TE25
RSX205L-30TE25
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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MCH183FN224ZK mch18.pdf
MCH183FN224ZK
Виробник: Rohm Semiconductor
Description: CAP CER 0.22UF 16V Y5V 0603
Packaging: Tape & Reel (TR)
Tolerance: -20%, +80%
Voltage - Rated: 16V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: Y5V (F)
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -30°C ~ 85°C
Applications: General Purpose
Thickness (Max): 0.035" (0.90mm)
Capacitance: 0.22 µF
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MCH185CN152KK mch18.pdf
MCH185CN152KK
Виробник: Rohm Semiconductor
Description: CAP CER 1500PF 50V X7R 0603
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.035" (0.90mm)
Capacitance: 1500 pF
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MCH185CN152KK mch18.pdf
MCH185CN152KK
Виробник: Rohm Semiconductor
Description: CAP CER 1500PF 50V X7R 0603
Packaging: Cut Tape (CT)
Tolerance: ±10%
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.035" (0.90mm)
Capacitance: 1500 pF
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MCH032CN152KK MCH03.pdf
MCH032CN152KK
Виробник: Rohm Semiconductor
Description: CAP CER 1500PF 25V X7R 0201
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Voltage - Rated: 25V
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.012" (0.30mm)
Capacitance: 1500 pF
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MCH032CN152KK MCH03.pdf
MCH032CN152KK
Виробник: Rohm Semiconductor
Description: CAP CER 1500PF 25V X7R 0201
Packaging: Cut Tape (CT)
Tolerance: ±10%
Voltage - Rated: 25V
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.012" (0.30mm)
Capacitance: 1500 pF
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BR93G66FJ-3GTE2 datasheet?p=BR93G66FJ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66FJ-3GTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT SPI 3MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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BR93G66FJ-3GTE2 datasheet?p=BR93G66FJ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66FJ-3GTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT SPI 3MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+23.20 грн
25+21.55 грн
50+20.12 грн
100+17.87 грн
250+17.64 грн
500+17.09 грн
1000+16.63 грн
Мінімальне замовлення: 13
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BR93G66F-3GTE2 datasheet?p=BR93G66F-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66F-3GTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT SPI 3MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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BR93G66F-3GTE2 datasheet?p=BR93G66F-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66F-3GTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT SPI 3MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.03 грн
10+37.97 грн
25+37.49 грн
50+34.97 грн
100+31.27 грн
250+31.00 грн
500+30.04 грн
1000+28.97 грн
Мінімальне замовлення: 8
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BR93G66F-3AGTE2 datasheet?p=BR93G66F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66F-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT SPI 3MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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BR93G66F-3AGTE2 datasheet?p=BR93G66F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR93G66F-3AGTE2
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT SPI 3MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
на замовлення 1259 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.03 грн
10+37.82 грн
25+37.34 грн
50+34.84 грн
100+31.14 грн
250+30.88 грн
500+29.93 грн
1000+28.86 грн
Мінімальне замовлення: 8
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GMR100HTBFA10L0 gmr-e.pdf
GMR100HTBFA10L0
Виробник: Rohm Semiconductor
Description: RES 0.01 OHM 1% 7W 2512
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 10 mOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+44.14 грн
4000+39.81 грн
Мінімальне замовлення: 2000
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GMR100HTBFA10L0 gmr-e.pdf
GMR100HTBFA10L0
Виробник: Rohm Semiconductor
Description: RES 0.01 OHM 1% 7W 2512
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 10 mOhms
на замовлення 5916 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.13 грн
10+86.86 грн
25+74.79 грн
50+63.11 грн
100+57.09 грн
250+50.50 грн
500+45.61 грн
1000+42.16 грн
Мінімальне замовлення: 3
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GMR100HJBFIR022
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 22M HIGH P
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 mOhms
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GMR100HJBFIR022
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 22M HIGH P
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 mOhms
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GMR100HJBFMR033
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 33M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 33 mOhms
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GMR100HJBFMR033
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 33M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 33 mOhms
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GMR100HJBFA10L0
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 10M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 10 mOhms
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GMR100HJBFA10L0
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 10M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 10 mOhms
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GMR100HJBFHR020
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 20M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 20 mOhms
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GMR100HJBFHR020
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 20M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 20 mOhms
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GMR100HJBFER015
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 15M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 MOhms
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GMR100HJBFER015
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 15M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 MOhms
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GMR100HJBFQR047
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 47M, HIGH
Packaging: Tape & Reel (TR)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 47 mOhms
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GMR100HJBFQR047
Виробник: Rohm Semiconductor
Description: 6432 (2512) SIZE, 7W, 47M, HIGH
Packaging: Cut Tape (CT)
Power (Watts): 7W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.252" L x 0.126" W (6.40mm x 3.20mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 47 mOhms
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LTR100JZPJ473 ltr-e.pdf
LTR100JZPJ473
Виробник: Rohm Semiconductor
Description: RES SMD 47K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 47 kOhms
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