Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103044) > Сторінка 1065 з 1718
| Фото | Назва | Виробник | Інформація |
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ESR03EZPF1781 | Rohm Semiconductor |
Description: RES 1.78K OHM 1% 1/4W 0603Packaging: Tape & Reel (TR) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 1.78 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESR03EZPF1781 | Rohm Semiconductor |
Description: RES 1.78K OHM 1% 1/4W 0603Packaging: Cut Tape (CT) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 1.78 kOhms |
на замовлення 4525 шт: термін постачання 21-31 дні (днів) |
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RX2L10BBGC7G | Rohm Semiconductor |
Description: NCH 60V 180A, TO-220FP, POWER MOPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR20T40ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 10A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A Current - Reverse Leakage @ Vr: 240 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR20T30ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 10A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCOA0J106M8R | Rohm Semiconductor |
Description: CAP TANT POLY 10UF 6.3V 1206Tolerance: ±20% Features: General Purpose Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Mounting Type: Surface Mount Type: Molded Operating Temperature: -55°C ~ 105°C ESR (Equivalent Series Resistance): 200mOhm @ 100kHz Manufacturer Size Code: A Height - Seated (Max): 0.071" (1.80mm) Capacitance: 10 µF Voltage - Rated: 6.3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESR10EZPF8201 | Rohm Semiconductor |
Description: RES 8.2K OHM 1% 2/5W 0805Packaging: Tape & Reel (TR) Power (Watts): 0.4W, 2/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 8.2 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ESR10EZPF8201 | Rohm Semiconductor |
Description: RES 8.2K OHM 1% 2/5W 0805Packaging: Cut Tape (CT) Power (Watts): 0.4W, 2/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 8.2 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ392 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RES 0603 CAPower (Watts): 0.1W, 1/10W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 3.9 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR18EZPJ242 | Rohm Semiconductor |
Description: RES 2.4K OHM 5% 3/4W 1206 WIDEPower (Watts): 0.75W, 3/4W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 (1632 Metric) Height - Seated (Max): 0.026" (0.65mm) Resistance: 2.4 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR18EZPJ242 | Rohm Semiconductor |
Description: RES 2.4K OHM 5% 3/4W 1206 WIDEPower (Watts): 0.75W, 3/4W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 (1632 Metric) Height - Seated (Max): 0.026" (0.65mm) Resistance: 2.4 kOhms |
на замовлення 4989 шт: термін постачання 21-31 дні (днів) |
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MCR10SEQPF4702 | Rohm Semiconductor |
Description: 2012(0805)SIZE, HIGH POWER THICKPower (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 47 kOhms |
на замовлення 95000 шт: термін постачання 21-31 дні (днів) |
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MCR10SEQPF4702 | Rohm Semiconductor |
Description: 2012(0805)SIZE, HIGH POWER THICKPower (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 47 kOhms |
на замовлення 99870 шт: термін постачання 21-31 дні (днів) |
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LTR100LJZPJSR051 | Rohm Semiconductor |
Description: HIGH POWER CHIP RESISTOR : HIGH-Power (Watts): 4W Tolerance: ±5% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 51 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR100LJZPJSR051 | Rohm Semiconductor |
Description: HIGH POWER CHIP RESISTOR : HIGH-Power (Watts): 4W Tolerance: ±5% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 51 mOhms |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
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LTR18EZPJSR075 | Rohm Semiconductor |
Description: RES 0.075 OHM 5% 1.5W 1206 WIDEPower (Watts): 1.5W Tolerance: ±5% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.027" (0.68mm) Resistance: 75 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR18EZPJSR075 | Rohm Semiconductor |
Description: RES 0.075 OHM 5% 1.5W 1206 WIDEPower (Watts): 1.5W Tolerance: ±5% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: 0/ +150ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.027" (0.68mm) Resistance: 75 mOhms |
на замовлення 4995 шт: термін постачання 21-31 дні (днів) |
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LTR18EZPJ750 | Rohm Semiconductor |
Description: RES SMD 75 OHM 5% 1.5W 1206 WIDEPower (Watts): 1.5W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 (1632 Metric) Height - Seated (Max): 0.026" (0.65mm) Resistance: 75 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR18EZPJ750 | Rohm Semiconductor |
Description: RES SMD 75 OHM 5% 1.5W 1206 WIDEPower (Watts): 1.5W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 (1632 Metric) Height - Seated (Max): 0.026" (0.65mm) Resistance: 75 Ohms |
на замовлення 4490 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ111 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.4W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 110 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDR03EZPJ111 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.4W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 110 Ohms |
на замовлення 4100 шт: термін постачання 21-31 дні (днів) |
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RB178VYM-40FHTR | Rohm Semiconductor |
Description: 40V, 1A, SOD-323HE, SCHOTTKY BARPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A Current - Reverse Leakage @ Vr: 300 nA @ 40 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB178VYM-40FHTR | Rohm Semiconductor |
Description: 40V, 1A, SOD-323HE, SCHOTTKY BARPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A Current - Reverse Leakage @ Vr: 300 nA @ 40 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RH7L03BBKFRATCB | Rohm Semiconductor |
Description: NCH 60V 35A, DFN3333T8LSAB, POWEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 70µA Supplier Device Package: DFN3333T8LSAB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RH7L03BBKFRATCB | Rohm Semiconductor |
Description: NCH 60V 35A, DFN3333T8LSAB, POWEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 70µA Supplier Device Package: DFN3333T8LSAB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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LTR100JZPFLR300 | Rohm Semiconductor |
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDEPower (Watts): 3W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 300 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR100JZPFLR300 | Rohm Semiconductor |
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDEPower (Watts): 3W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 300 mOhms |
на замовлення 6609 шт: термін постачання 21-31 дні (днів) |
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ESR03EZPF9102 | Rohm Semiconductor |
Description: RES 91K OHM 1% 1/4W 0603Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 91 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ESR03EZPF9102 | Rohm Semiconductor |
Description: RES 91K OHM 1% 1/4W 0603Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 91 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RB228NS-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 30A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB228NS-30TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 30A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 30 V |
на замовлення 821 шт: термін постачання 21-31 дні (днів) |
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RB228NS-30FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 30A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB228NS-30FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 30A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 999 шт: термін постачання 21-31 дні (днів) |
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RB228NS-60FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 30A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB228NS-60FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 30A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 581 шт: термін постачання 21-31 дні (днів) |
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RB228NS-40TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 30A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB228NS-40TL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 30A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 670 шт: термін постачання 21-31 дні (днів) |
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RQ3L270BJFRATCB | Rohm Semiconductor |
Description: PCH -60V -27A, HSMT8AG, POWER MOPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 584µA Supplier Device Package: 8-HSMT (3.2x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ3L270BJFRATCB | Rohm Semiconductor |
Description: PCH -60V -27A, HSMT8AG, POWER MOPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 584µA Supplier Device Package: 8-HSMT (3.2x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF1202 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPackaging: Tape & Reel (TR) Power (Watts): 0.4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 12 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDR03EZPF1202 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPackaging: Cut Tape (CT) Power (Watts): 0.4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 12 kOhms |
на замовлення 8177 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF12R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPackaging: Tape & Reel (TR) Power (Watts): 0.4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 12 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDR03EZPF12R0 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPackaging: Cut Tape (CT) Power (Watts): 0.4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 12 Ohms |
на замовлення 1595 шт: термін постачання 21-31 дні (днів) |
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SH8MC4TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 60V 3.5A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SH8MC4TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 60V 3.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD67872MWV-ZE2 | Rohm Semiconductor |
Description: 4.5V TO 60V, THREE-PHASE BRUSHLEPackaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 125°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 60V Applications: General Purpose Technology: NMOS Voltage - Load: 4.5V ~ 60V Supplier Device Package: UQFN28AV040A Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD67872MWV-ZE2 | Rohm Semiconductor |
Description: 4.5V TO 60V, THREE-PHASE BRUSHLEPackaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 125°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 60V Applications: General Purpose Technology: NMOS Voltage - Load: 4.5V ~ 60V Supplier Device Package: UQFN28AV040A Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 2486 шт: термін постачання 21-31 дні (днів) |
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BD67870MWV-ZE2 | Rohm Semiconductor |
Description: 4.5V TO 60V, THREE-PHASE BRUSHLEPackaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 125°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 60V Applications: General Purpose Technology: NMOS Voltage - Load: 4.5V ~ 60V Supplier Device Package: UQFN28AV040A Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD67870MWV-ZE2 | Rohm Semiconductor |
Description: 4.5V TO 60V, THREE-PHASE BRUSHLEPackaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 125°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 60V Applications: General Purpose Technology: NMOS Voltage - Load: 4.5V ~ 60V Supplier Device Package: UQFN28AV040A Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 2489 шт: термін постачання 21-31 дні (днів) |
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BD67871MWV-ZE2 | Rohm Semiconductor |
Description: TRIC3 4.5 V TO 60 V, THREE-PHASEPackaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 125°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 60V Applications: General Purpose Technology: NMOS Voltage - Load: 4.5V ~ 60V Supplier Device Package: UQFN28AV040A Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD67871MWV-ZE2 | Rohm Semiconductor |
Description: TRIC3 4.5 V TO 60 V, THREE-PHASEPackaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 125°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 60V Applications: General Purpose Technology: NMOS Voltage - Load: 4.5V ~ 60V Supplier Device Package: UQFN28AV040A Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 2487 шт: термін постачання 21-31 дні (днів) |
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BD67871MWV-EVK-003 | Rohm Semiconductor |
Description: EVALUATION BOARD - BD67871MWV-EVPackaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BD67872MWV-EVK-003 | Rohm Semiconductor |
Description: EVALUATION BOARD - BD67872MWV-EVPackaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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BD67870MWV-EVK-003 | Rohm Semiconductor |
Description: EVALUATION BOARD - BD67870MWV-EVPackaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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R8011KNZ4C13 | Rohm Semiconductor |
Description: NCH 800V 11A, TO-247AD, HIGH-SPEPackaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5.5mA Supplier Device Package: TO-247G Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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R8011KNZ4C13 | Rohm Semiconductor |
Description: NCH 800V 11A, TO-247AD, HIGH-SPEPackaging: Cut Tape (CT) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5.5mA Supplier Device Package: TO-247G Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RH6E040BGTB1 | Rohm Semiconductor |
Description: NCH 30V 125A, HSMT8, POWER MOSFEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V Power Dissipation (Max): 2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RH6E040BGTB1 | Rohm Semiconductor |
Description: NCH 30V 125A, HSMT8, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V Power Dissipation (Max): 2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MCR03SEQPF5100 | Rohm Semiconductor |
Description: 1608(0603)SIZE, HIGH POWER THICKPower (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 510 Ohms |
на замовлення 95000 шт: термін постачання 21-31 дні (днів) |
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MCR03SEQPF5100 | Rohm Semiconductor |
Description: 1608(0603)SIZE, HIGH POWER THICKPower (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 510 Ohms |
на замовлення 99976 шт: термін постачання 21-31 дні (днів) |
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| ESR03EZPF1781 |
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Виробник: Rohm Semiconductor
Description: RES 1.78K OHM 1% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.78 kOhms
Description: RES 1.78K OHM 1% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.78 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| ESR03EZPF1781 |
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Виробник: Rohm Semiconductor
Description: RES 1.78K OHM 1% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.78 kOhms
Description: RES 1.78K OHM 1% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.78 kOhms
на замовлення 4525 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.17 грн |
| 63+ | 4.82 грн |
| 81+ | 3.74 грн |
| 96+ | 2.96 грн |
| 113+ | 2.52 грн |
| 250+ | 2.08 грн |
| 500+ | 1.79 грн |
| 1000+ | 1.60 грн |
| RX2L10BBGC7G |
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Виробник: Rohm Semiconductor
Description: NCH 60V 180A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: NCH 60V 180A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 423.24 грн |
| 30+ | 232.26 грн |
| 120+ | 193.69 грн |
| 510+ | 155.22 грн |
| RBR20T40ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
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| RBR20T30ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE ARR SCHOTT 30V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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| TCOA0J106M8R |
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Виробник: Rohm Semiconductor
Description: CAP TANT POLY 10UF 6.3V 1206
Tolerance: ±20%
Features: General Purpose
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Type: Molded
Operating Temperature: -55°C ~ 105°C
ESR (Equivalent Series Resistance): 200mOhm @ 100kHz
Manufacturer Size Code: A
Height - Seated (Max): 0.071" (1.80mm)
Capacitance: 10 µF
Voltage - Rated: 6.3 V
Description: CAP TANT POLY 10UF 6.3V 1206
Tolerance: ±20%
Features: General Purpose
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Type: Molded
Operating Temperature: -55°C ~ 105°C
ESR (Equivalent Series Resistance): 200mOhm @ 100kHz
Manufacturer Size Code: A
Height - Seated (Max): 0.071" (1.80mm)
Capacitance: 10 µF
Voltage - Rated: 6.3 V
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| ESR10EZPF8201 |
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Виробник: Rohm Semiconductor
Description: RES 8.2K OHM 1% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 8.2 kOhms
Description: RES 8.2K OHM 1% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 8.2 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 1.87 грн |
| ESR10EZPF8201 |
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Виробник: Rohm Semiconductor
Description: RES 8.2K OHM 1% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 8.2 kOhms
Description: RES 8.2K OHM 1% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 8.2 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.73 грн |
| 52+ | 5.80 грн |
| 66+ | 4.58 грн |
| 79+ | 3.62 грн |
| 100+ | 3.11 грн |
| 250+ | 2.60 грн |
| 500+ | 2.26 грн |
| 1000+ | 2.03 грн |
| SFR03EZPJ392 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RES 0603 CA
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.9 kOhms
Description: SULFUR TOLERANT CHIP RES 0603 CA
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.9 kOhms
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| LTR18EZPJ242 |
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Виробник: Rohm Semiconductor
Description: RES 2.4K OHM 5% 3/4W 1206 WIDE
Power (Watts): 0.75W, 3/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 kOhms
Description: RES 2.4K OHM 5% 3/4W 1206 WIDE
Power (Watts): 0.75W, 3/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 kOhms
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| LTR18EZPJ242 |
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Виробник: Rohm Semiconductor
Description: RES 2.4K OHM 5% 3/4W 1206 WIDE
Power (Watts): 0.75W, 3/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 kOhms
Description: RES 2.4K OHM 5% 3/4W 1206 WIDE
Power (Watts): 0.75W, 3/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 kOhms
на замовлення 4989 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.52 грн |
| 51+ | 5.95 грн |
| 65+ | 4.67 грн |
| 77+ | 3.69 грн |
| 100+ | 3.10 грн |
| 250+ | 2.64 грн |
| 500+ | 2.30 грн |
| 1000+ | 2.07 грн |
| MCR10SEQPF4702 |
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Виробник: Rohm Semiconductor
Description: 2012(0805)SIZE, HIGH POWER THICK
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
Description: 2012(0805)SIZE, HIGH POWER THICK
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 0.53 грн |
| 10000+ | 0.49 грн |
| 15000+ | 0.48 грн |
| 25000+ | 0.44 грн |
| 35000+ | 0.43 грн |
| MCR10SEQPF4702 |
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Виробник: Rohm Semiconductor
Description: 2012(0805)SIZE, HIGH POWER THICK
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
Description: 2012(0805)SIZE, HIGH POWER THICK
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
на замовлення 99870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.04 грн |
| 286+ | 1.05 грн |
| 323+ | 0.93 грн |
| 400+ | 0.71 грн |
| 449+ | 0.63 грн |
| 500+ | 0.58 грн |
| 1000+ | 0.54 грн |
| 2500+ | 0.50 грн |
| LTR100LJZPJSR051 |
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Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR : HIGH-
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 51 mOhms
Description: HIGH POWER CHIP RESISTOR : HIGH-
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 51 mOhms
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| LTR100LJZPJSR051 |
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Виробник: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR : HIGH-
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 51 mOhms
Description: HIGH POWER CHIP RESISTOR : HIGH-
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 51 mOhms
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.89 грн |
| 10+ | 46.56 грн |
| 25+ | 40.62 грн |
| 50+ | 34.91 грн |
| 100+ | 32.37 грн |
| 250+ | 29.78 грн |
| 500+ | 27.82 грн |
| 1000+ | 26.65 грн |
| LTR18EZPJSR075 |
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Виробник: Rohm Semiconductor
Description: RES 0.075 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 75 mOhms
Description: RES 0.075 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 75 mOhms
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од. на суму грн.
| LTR18EZPJSR075 |
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Виробник: Rohm Semiconductor
Description: RES 0.075 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 75 mOhms
Description: RES 0.075 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 75 mOhms
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.90 грн |
| 14+ | 22.68 грн |
| 25+ | 19.11 грн |
| 50+ | 16.03 грн |
| 100+ | 14.51 грн |
| 250+ | 12.98 грн |
| 500+ | 11.90 грн |
| 1000+ | 11.21 грн |
| LTR18EZPJ750 |
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Виробник: Rohm Semiconductor
Description: RES SMD 75 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 75 Ohms
Description: RES SMD 75 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 75 Ohms
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од. на суму грн.
| LTR18EZPJ750 |
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Виробник: Rohm Semiconductor
Description: RES SMD 75 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 75 Ohms
Description: RES SMD 75 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 75 Ohms
на замовлення 4490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.73 грн |
| 52+ | 5.88 грн |
| 66+ | 4.61 грн |
| 78+ | 3.63 грн |
| 100+ | 3.05 грн |
| 250+ | 2.61 грн |
| 500+ | 2.27 грн |
| 1000+ | 2.04 грн |
| SDR03EZPJ111 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 Ohms
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| SDR03EZPJ111 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 Ohms
на замовлення 4100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.82 грн |
| 82+ | 3.69 грн |
| 106+ | 2.86 грн |
| 128+ | 2.22 грн |
| 151+ | 1.87 грн |
| 250+ | 1.52 грн |
| 500+ | 1.30 грн |
| 1000+ | 1.14 грн |
| RB178VYM-40FHTR |
![]() |
Виробник: Rohm Semiconductor
Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.22 грн |
| RB178VYM-40FHTR |
![]() |
Виробник: Rohm Semiconductor
Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.68 грн |
| 13+ | 24.11 грн |
| 100+ | 15.41 грн |
| 500+ | 10.92 грн |
| 1000+ | 9.78 грн |
| RH7L03BBKFRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
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| RH7L03BBKFRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 116.57 грн |
| 10+ | 71.64 грн |
| 100+ | 48.03 грн |
| 500+ | 35.56 грн |
| 1000+ | 32.51 грн |
| LTR100JZPFLR300 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
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В кошику
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| LTR100JZPFLR300 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
на замовлення 6609 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.28 грн |
| 10+ | 40.98 грн |
| 25+ | 34.65 грн |
| 50+ | 30.67 грн |
| 100+ | 28.33 грн |
| 250+ | 25.96 грн |
| 500+ | 24.19 грн |
| 1000+ | 23.11 грн |
| ESR03EZPF9102 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 91K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 kOhms
Description: RES 91K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 1.45 грн |
| ESR03EZPF9102 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 91K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 kOhms
Description: RES 91K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.17 грн |
| 63+ | 4.82 грн |
| 80+ | 3.77 грн |
| 96+ | 2.97 грн |
| 112+ | 2.54 грн |
| 250+ | 2.09 грн |
| 500+ | 1.80 грн |
| 1000+ | 1.61 грн |
| RB228NS-30TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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од. на суму грн.
| RB228NS-30TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
на замовлення 821 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 156.47 грн |
| 10+ | 103.36 грн |
| 100+ | 75.46 грн |
| 500+ | 57.07 грн |
| RB228NS-30FHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
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од. на суму грн.
| RB228NS-30FHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
на замовлення 999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 165.85 грн |
| 10+ | 104.04 грн |
| 100+ | 81.51 грн |
| 500+ | 62.82 грн |
| RB228NS-60FHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
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од. на суму грн.
| RB228NS-60FHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
на замовлення 581 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.42 грн |
| 10+ | 109.24 грн |
| 100+ | 81.51 грн |
| 500+ | 62.82 грн |
| RB228NS-40TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| RB228NS-40TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 670 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 176.81 грн |
| 10+ | 109.99 грн |
| 100+ | 75.46 грн |
| 500+ | 57.07 грн |
| RQ3L270BJFRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 34.56 грн |
| RQ3L270BJFRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 127.52 грн |
| 10+ | 77.97 грн |
| 100+ | 52.00 грн |
| 500+ | 39.93 грн |
| 1000+ | 36.12 грн |
| SDR03EZPF1202 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| SDR03EZPF1202 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 kOhms
на замовлення 8177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.95 грн |
| 59+ | 5.12 грн |
| 76+ | 3.98 грн |
| 90+ | 3.15 грн |
| 105+ | 2.69 грн |
| 250+ | 2.23 грн |
| 500+ | 1.93 грн |
| 1000+ | 1.72 грн |
| SDR03EZPF12R0 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 Ohms
товару немає в наявності
В кошику
од. на суму грн.
| SDR03EZPF12R0 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 Ohms
на замовлення 1595 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.95 грн |
| 59+ | 5.12 грн |
| 76+ | 3.98 грн |
| 90+ | 3.15 грн |
| 105+ | 2.69 грн |
| 250+ | 2.23 грн |
| 500+ | 1.93 грн |
| 1000+ | 1.72 грн |
| SH8MC4TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 28.82 грн |
| SH8MC4TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 106.40 грн |
| 10+ | 64.79 грн |
| 100+ | 43.19 грн |
| 500+ | 31.85 грн |
| 1000+ | 29.06 грн |
| BD67872MWV-ZE2 |
![]() |
Виробник: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
товару немає в наявності
В кошику
од. на суму грн.
| BD67872MWV-ZE2 |
![]() |
Виробник: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 182.28 грн |
| 10+ | 130.93 грн |
| 25+ | 119.75 грн |
| 100+ | 100.83 грн |
| 250+ | 95.32 грн |
| 500+ | 93.22 грн |
| BD67870MWV-ZE2 |
![]() |
Виробник: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
товару немає в наявності
В кошику
од. на суму грн.
| BD67870MWV-ZE2 |
![]() |
Виробник: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 2489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 186.20 грн |
| 10+ | 133.42 грн |
| 25+ | 122.07 грн |
| 100+ | 102.82 грн |
| 250+ | 97.22 грн |
| 500+ | 95.15 грн |
| BD67871MWV-ZE2 |
![]() |
Виробник: Rohm Semiconductor
Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
товару немає в наявності
В кошику
од. на суму грн.
| BD67871MWV-ZE2 |
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Виробник: Rohm Semiconductor
Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 2487 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 276.95 грн |
| 10+ | 201.98 грн |
| 25+ | 185.72 грн |
| 100+ | 157.50 грн |
| 250+ | 149.50 грн |
| 500+ | 148.84 грн |
| BD67871MWV-EVK-003 |
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на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7732.58 грн |
| BD67872MWV-EVK-003 |
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на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7732.58 грн |
| BD67870MWV-EVK-003 |
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на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8484.40 грн |
| R8011KNZ4C13 |
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Виробник: Rohm Semiconductor
Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 600+ | 232.36 грн |
| R8011KNZ4C13 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 540.59 грн |
| 10+ | 354.30 грн |
| 100+ | 273.88 грн |
| RH6E040BGTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 42.69 грн |
| RH6E040BGTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.99 грн |
| 10+ | 92.96 грн |
| 100+ | 63.18 грн |
| 500+ | 47.31 грн |
| 1000+ | 45.59 грн |
| MCR03SEQPF5100 |
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Виробник: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 510 Ohms
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 510 Ohms
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 0.33 грн |
| 10000+ | 0.30 грн |
| 25000+ | 0.27 грн |
| 50000+ | 0.26 грн |
| MCR03SEQPF5100 |
![]() |
Виробник: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 510 Ohms
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 510 Ohms
на замовлення 99976 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.04 грн |
| 445+ | 0.68 грн |
| 500+ | 0.60 грн |
| 635+ | 0.45 грн |
| 710+ | 0.40 грн |
| 773+ | 0.37 грн |
| 1000+ | 0.34 грн |
| 2500+ | 0.31 грн |



















