Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101978) > Сторінка 774 з 1700
| Фото | Назва | Виробник | Інформація |
Доступність |
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BU52078GWZ-E2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLARPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±30mT Trip, ±16.4mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 6304 шт: термін постачання 21-31 дні (днів) |
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RF2001NS2DTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 20A TO-263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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SCS206AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 6A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 219pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 120 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS208AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 8A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 291pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A Current - Reverse Leakage @ Vr: 160 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS210AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 365pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 200 µA @ 600 V Reverse Recovery Time (trr): 0 ns Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS212AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 12A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 438pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS220AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCS206AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 6A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 219pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 120 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 746 шт: термін постачання 21-31 дні (днів) |
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SCS208AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 8A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 291pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A Current - Reverse Leakage @ Vr: 160 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS210AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 10A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 365pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 200 µA @ 600 V Reverse Recovery Time (trr): 0 ns Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 894 шт: термін постачання 21-31 дні (днів) |
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SCS212AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 12A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 438pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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SCS220AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2697 шт: термін постачання 21-31 дні (днів) |
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PDZVTR10A | Rohm Semiconductor |
Description: ZENER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR11A | Rohm Semiconductor |
Description: ZENER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR12B | Rohm Semiconductor |
Description: DIODE ZENER 12.75V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12.75 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 9 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR16B | Rohm Semiconductor |
Description: DIODE ZENER 17.25V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±6.09% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 17.25 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR18B | Rohm Semiconductor |
Description: DIODE ZENER 18V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±6.01% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR24A | Rohm Semiconductor |
Description: DIODE ZENER 24.2V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±5.79% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 24.2 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 19 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR27A | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR27B | Rohm Semiconductor |
Description: DIODE ZENER 28.9V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±6.57% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 28.9 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 21 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR3.6B | Rohm Semiconductor |
Description: DIODE ZENER 3.8V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±5.26% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.8 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR30B | Rohm Semiconductor |
Description: DIODE ZENER 32V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±6.25% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 32 V Impedance (Max) (Zzt): 18 Ohms Supplier Device Package: PMDTM Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 23 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR36B | Rohm Semiconductor |
Description: DIODE ZENER 38V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±5.26% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 38 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 27 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR4.3B | Rohm Semiconductor |
Description: DIODE ZENER 4.55V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±5.49% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.55 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR4.7B | Rohm Semiconductor |
Description: DIODE ZENER 4.95V 1W PMDTM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR43A | Rohm Semiconductor |
Description: ZENER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR5.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR5.6A | Rohm Semiconductor |
Description: DIODE ZENER 5.65V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±6.19% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.65 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR6.8B | Rohm Semiconductor |
Description: DIODE ZENER 7.25V 1W PMDTM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB050LAM-60TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTMPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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RF071LAM4STR | Rohm Semiconductor |
Description: DIODE STANDARD 400V 1A PMDTMPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RF201LAM4STR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1.5A PMDTMPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RFN2LAM4STR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1.5A PMDTM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDZVTR16 | Rohm Semiconductor |
Description: DIODE ZENER 16V 500MW TUMD2M |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TDZVTR18 | Rohm Semiconductor |
Description: DIODE ZENER 18V 500MW TUMD2M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDZVTR6.2 | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 500MW TUMD2M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR10A | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR11A | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR12B | Rohm Semiconductor |
Description: DIODE ZENER 12.75V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±5.88% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12.75 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 9 V |
на замовлення 14039 шт: термін постачання 21-31 дні (днів) |
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PDZVTR16B | Rohm Semiconductor |
Description: DIODE ZENER 17.25V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±6.09% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 17.25 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 12 V |
на замовлення 2315 шт: термін постачання 21-31 дні (днів) |
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PDZVTR18B | Rohm Semiconductor |
Description: DIODE ZENER 18V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±6.01% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 5617 шт: термін постачання 21-31 дні (днів) |
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PDZVTR24A | Rohm Semiconductor |
Description: DIODE ZENER 24.2V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±5.79% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 24.2 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 19 V |
на замовлення 2830 шт: термін постачання 21-31 дні (днів) |
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PDZVTR27A | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR27B | Rohm Semiconductor |
Description: DIODE ZENER 28.9V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±6.57% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 28.9 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 21 V |
на замовлення 6392 шт: термін постачання 21-31 дні (днів) |
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PDZVTR3.6B | Rohm Semiconductor |
Description: DIODE ZENER 3.8V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±5.26% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.8 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 27 V |
на замовлення 4712 шт: термін постачання 21-31 дні (днів) |
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PDZVTR36B | Rohm Semiconductor |
Description: DIODE ZENER 38V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±5.26% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 38 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 27 V |
на замовлення 6996 шт: термін постачання 21-31 дні (днів) |
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PDZVTR4.3B | Rohm Semiconductor |
Description: DIODE ZENER 4.55V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±5.49% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.55 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
на замовлення 3254 шт: термін постачання 21-31 дні (днів) |
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PDZVTR4.7B | Rohm Semiconductor |
Description: DIODE ZENER 4.95V 1W PMDTM |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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PDZVTR43A | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR5.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±5.88% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
на замовлення 11144 шт: термін постачання 21-31 дні (днів) |
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PDZVTR5.6A | Rohm Semiconductor |
Description: DIODE ZENER 5.65V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±6.19% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.65 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V |
на замовлення 6150 шт: термін постачання 21-31 дні (днів) |
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PDZVTR6.8B | Rohm Semiconductor |
Description: DIODE ZENER 7.25V 1W PMDTM |
на замовлення 3292 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB050LAM-60TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTMPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 25894 шт: термін постачання 21-31 дні (днів) |
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RF071LAM4STR | Rohm Semiconductor |
Description: DIODE STANDARD 400V 1A PMDTMPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 5214 шт: термін постачання 21-31 дні (днів) |
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RF201LAM4STR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1.5A PMDTMPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 7325 шт: термін постачання 21-31 дні (днів) |
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RFN2LAM4STR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1.5A PMDTM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDZVTR16 | Rohm Semiconductor |
Description: DIODE ZENER 16V 500MW TUMD2M |
на замовлення 8306 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TDZVTR6.2 | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 500MW TUMD2M |
на замовлення 347 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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PDZVTR43A | Rohm Semiconductor |
Description: ZENER DIODE |
на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB400VAM-50TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 50V 500MA TUMD2MPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
| BU52078GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±30mT Trip, ±16.4mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±30mT Trip, ±16.4mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 6304 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.96 грн |
| 17+ | 19.94 грн |
| 18+ | 18.87 грн |
| 25+ | 16.46 грн |
| 50+ | 15.59 грн |
| 100+ | 14.81 грн |
| 500+ | 13.03 грн |
| 1000+ | 12.45 грн |
| RF2001NS2DTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 20A TO-263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 20A TO-263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.03 грн |
| 10+ | 149.06 грн |
| SCS206AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SCS208AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SCS210AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SCS212AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SCS220AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 511.50 грн |
| SCS206AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 746 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 451.79 грн |
| 10+ | 291.27 грн |
| 100+ | 211.14 грн |
| 500+ | 183.94 грн |
| SCS208AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SCS210AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 894 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 621.21 грн |
| 10+ | 407.78 грн |
| 100+ | 318.81 грн |
| SCS212AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 646.88 грн |
| 10+ | 534.18 грн |
| SCS220AJHRTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2697 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1033.64 грн |
| 10+ | 694.11 грн |
| 100+ | 524.19 грн |
| 500+ | 462.24 грн |
| PDZVTR10A |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR11A |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR12B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.64 грн |
| PDZVTR16B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.09%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.09%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR18B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.01%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 18V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.01%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.96 грн |
| PDZVTR24A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 24.2V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.79%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
Description: DIODE ZENER 24.2V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.79%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR27A |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PDZVTR27B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 28.9V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.57%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 28.9 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 21 V
Description: DIODE ZENER 28.9V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.57%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 28.9 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 21 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.37 грн |
| PDZVTR3.6B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.8V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
Description: DIODE ZENER 3.8V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR30B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 32V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.25%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 32 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: PMDTM
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
Description: DIODE ZENER 32V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.25%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 32 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: PMDTM
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.37 грн |
| PDZVTR36B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 38V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
Description: DIODE ZENER 38V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.95 грн |
| 6000+ | 7.16 грн |
| PDZVTR4.3B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.55V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.49%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 4.55V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.49%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR4.7B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.95V 1W PMDTM
Description: DIODE ZENER 4.95V 1W PMDTM
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR43A |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR5.1B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 5.1V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.27 грн |
| 6000+ | 8.56 грн |
| PDZVTR5.6A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.65V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.19%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.65 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
Description: DIODE ZENER 5.65V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.19%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.65 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.13 грн |
| PDZVTR6.8B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.25V 1W PMDTM
Description: DIODE ZENER 7.25V 1W PMDTM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB050LAM-60TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.97 грн |
| 6000+ | 9.20 грн |
| 9000+ | 8.28 грн |
| RF071LAM4STR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 400V 1A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.22 грн |
| RF201LAM4STR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.39 грн |
| RFN2LAM4STR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDTM
Description: DIODE GEN PURP 400V 1.5A PMDTM
товару немає в наявності
В кошику
од. на суму грн.
| TDZVTR16 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW TUMD2M
Description: DIODE ZENER 16V 500MW TUMD2M
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TDZVTR18 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 500MW TUMD2M
Description: DIODE ZENER 18V 500MW TUMD2M
товару немає в наявності
В кошику
од. на суму грн.
| TDZVTR6.2 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW TUMD2M
Description: DIODE ZENER 6.2V 500MW TUMD2M
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR10A |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PDZVTR11A |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PDZVTR12B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 14039 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.78 грн |
| 13+ | 25.54 грн |
| 100+ | 16.26 грн |
| 500+ | 11.48 грн |
| 1000+ | 10.26 грн |
| PDZVTR16B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.09%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.09%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
на замовлення 2315 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.23 грн |
| 16+ | 21.92 грн |
| 100+ | 14.82 грн |
| 500+ | 10.84 грн |
| 1000+ | 9.77 грн |
| PDZVTR18B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.01%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 18V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.01%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 5617 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.22 грн |
| 14+ | 23.73 грн |
| 100+ | 15.11 грн |
| 500+ | 10.67 грн |
| 1000+ | 9.54 грн |
| PDZVTR24A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 24.2V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.79%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
Description: DIODE ZENER 24.2V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.79%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
на замовлення 2830 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.49 грн |
| 13+ | 26.61 грн |
| 100+ | 17.02 грн |
| 500+ | 12.06 грн |
| 1000+ | 10.79 грн |
| PDZVTR27A |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PDZVTR27B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 28.9V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.57%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 28.9 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 21 V
Description: DIODE ZENER 28.9V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.57%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 28.9 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 21 V
на замовлення 6392 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.08 грн |
| 15+ | 22.74 грн |
| 100+ | 15.42 грн |
| 500+ | 11.28 грн |
| 1000+ | 10.24 грн |
| PDZVTR3.6B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.8V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
Description: DIODE ZENER 3.8V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
на замовлення 4712 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.38 грн |
| 16+ | 20.68 грн |
| 100+ | 15.33 грн |
| 500+ | 11.28 грн |
| 1000+ | 9.20 грн |
| PDZVTR36B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 38V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
Description: DIODE ZENER 38V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
на замовлення 6996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.66 грн |
| 17+ | 20.52 грн |
| 100+ | 13.86 грн |
| 500+ | 10.13 грн |
| 1000+ | 9.13 грн |
| PDZVTR4.3B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.55V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.49%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 4.55V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.49%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 3254 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.08 грн |
| 13+ | 25.96 грн |
| 100+ | 15.56 грн |
| 500+ | 13.52 грн |
| 1000+ | 9.19 грн |
| PDZVTR4.7B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.95V 1W PMDTM
Description: DIODE ZENER 4.95V 1W PMDTM
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 41.07 грн |
| 11+ | 31.48 грн |
| PDZVTR43A |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PDZVTR5.1B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 5.1V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 11144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.23 грн |
| 13+ | 25.71 грн |
| 100+ | 15.40 грн |
| 500+ | 13.39 грн |
| 1000+ | 9.10 грн |
| PDZVTR5.6A |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.65V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.19%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.65 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
Description: DIODE ZENER 5.65V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.19%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.65 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
на замовлення 6150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 37.65 грн |
| 13+ | 25.38 грн |
| 100+ | 15.73 грн |
| 500+ | 11.85 грн |
| 1000+ | 9.79 грн |
| PDZVTR6.8B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.25V 1W PMDTM
Description: DIODE ZENER 7.25V 1W PMDTM
на замовлення 3292 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB050LAM-60TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 25894 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.79 грн |
| 12+ | 27.60 грн |
| 100+ | 16.56 грн |
| 500+ | 14.39 грн |
| 1000+ | 9.78 грн |
| RF071LAM4STR |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 400V 1A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 5214 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 22.25 грн |
| 23+ | 14.50 грн |
| 100+ | 6.92 грн |
| RF201LAM4STR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 7325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.67 грн |
| 16+ | 21.26 грн |
| 100+ | 14.75 грн |
| 500+ | 10.82 грн |
| 1000+ | 9.42 грн |
| RFN2LAM4STR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDTM
Description: DIODE GEN PURP 400V 1.5A PMDTM
товару немає в наявності
В кошику
од. на суму грн.
| TDZVTR16 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW TUMD2M
Description: DIODE ZENER 16V 500MW TUMD2M
на замовлення 8306 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TDZVTR6.2 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW TUMD2M
Description: DIODE ZENER 6.2V 500MW TUMD2M
на замовлення 347 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PDZVTR43A |
![]() |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB400VAM-50TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 50V 500MA TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 50V 500MA TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.06 грн |









