Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103507) > Сторінка 779 з 1726
| Фото | Назва | Виробник | Інформація |
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RF2001NS2DFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 20A LPDSReverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard Qualification: AEC-Q101 Grade: Automotive |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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RB050LAM-60TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTMPackage / Case: SOD-128 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 26.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
на замовлення 12659 шт: термін постачання 21-31 дні (днів) |
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RB085BM-40FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 10A TO252Current - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Qualification: AEC-Q101 Grade: Automotive Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 12.3 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 6381 шт: термін постачання 21-31 дні (днів) |
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RB160VYM-60FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 1A TUMD2MQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 40 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 6.65 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ20BM45AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 20A TO252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 200 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2081 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS45AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 45V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 647 шт: термін постачання 21-31 дні (днів) |
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RF501BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 5A TO252Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 5A Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Technology: Standard |
на замовлення 4666 шт: термін постачання 21-31 дні (днів) |
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RK7002BMHZGT116 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12166 шт: термін постачання 21-31 дні (днів) |
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RRL025P03FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2.5A TUMT6Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 |
на замовлення 815 шт: термін постачання 21-31 дні (днів) |
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SP8M51FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A 8SOPConfiguration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UM6K31NFHATCN | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 0.25A UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: UMT6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1325 шт: термін постачання 21-31 дні (днів) |
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RB238NS100FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 40A LPDSCurrent - Reverse Leakage @ Vr: 20 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 40A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 24.7 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ30NS65AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 65V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 450 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 16.1 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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BD83733HFP-MTR | Rohm Semiconductor |
Description: IC LED DRVR LIN PWM 500MA HRP7Packaging: Cut Tape (CT) Package / Case: HRP-7 (7 Leads + Tab) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100Hz ~ 5kHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: HRP7 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1835 шт: термін постачання 21-31 дні (днів) |
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BR24A02FJ-WME2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 256 x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 2Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 324 шт: термін постачання 21-31 дні (днів) |
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BR24A08F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOPDigiKey Programmable: Not Verified Memory Organization: 1K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 8Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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BR24A16F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOPQualification: AEC-Q100 Grade: Automotive Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Memory Organization: 2K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM |
на замовлення 621 шт: термін постачання 21-31 дні (днів) |
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BR24A32F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOPDigiKey Programmable: Not Verified Memory Organization: 4K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 4919 шт: термін постачання 21-31 дні (днів) |
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BR25H640FVT-2ACE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT SPI 8TSSOPBGrade: Automotive Supplier Device Package: 8-TSSOP-B Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 8K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RB558VYM150FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 500MA TUMD2MQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 500mA Technology: Schottky Reverse Recovery Time (trr): 6.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 15354 шт: термін постачання 21-31 дні (днів) |
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BAS40-04HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS40-05HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS40-06HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1423 шт: термін постачання 21-31 дні (днів) |
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BAS40HMFHT116 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 120mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54AHMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 30V 200MA SSD3 |
на замовлення 1431 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54HMFHT116 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 200MA SSD3Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SSD3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 12pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54SHMFHT116 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 200MA SSD3Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SSD3 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Schottky Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BAV170HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD00C0AWHFP-CTR | Rohm Semiconductor |
Description: IC REG LINEAR POS ADJ 1A HRP-5Current - Supply (Max): 2.5 mA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.5V @ 500mA PSRR: 55dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 1V Voltage - Output (Max): 15V Supplier Device Package: HRP-5 Number of Regulators: 1 Voltage - Input (Max): 26.5V Current - Quiescent (Iq): 2.5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 1A Mounting Type: Surface Mount Output Type: Adjustable Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 942 шт: термін постачання 21-31 дні (днів) |
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BD81842MUV-ME2 | Rohm Semiconductor |
Description: AUTOMOTIVE PANEL POWER MANAGEMENPart Status: Active Supplier Device Package: VQFN24SV4040 Current - Supply: 1.2mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive Applications: TFT-LCD Panels |
на замовлення 2380 шт: термін постачання 21-31 дні (днів) |
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RB055LAM-40TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDTMQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 14.6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
на замовлення 9631 шт: термін постачання 21-31 дні (днів) |
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RF2001NS3DFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 300V 20A LPDSCurrent - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Voltage - DC Reverse (Vr) (Max): 300 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RSS060P05FRATB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 6A 8SOP |
товару немає в наявності |
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RSS065N06FRATB | Rohm Semiconductor |
Description: MOSFET N-CH 60V 6.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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RSS070N05FRATB | Rohm Semiconductor |
Description: MOSFET N-CH 45V 7A 8SOPQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB088BM150FHTL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODECurrent - Reverse Leakage @ Vr: 15 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 10.7 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 3145 шт: термін постачання 21-31 дні (днів) |
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RB098BM150FHTL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE (CORRESPOMounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 7 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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RB225NS-40FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 27.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 327 шт: термін постачання 21-31 дні (днів) |
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RB400DFHT146 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 500MA SMD3Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMD3 Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 130pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 7.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB400VYM-50FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 500MA TUMD2MQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 130pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 7.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 3167 шт: термін постачання 21-31 дні (днів) |
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RB420DFHT146 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MA SMD3Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMD3 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 6pF @ 10V, 1MHz Technology: Schottky |
на замовлення 2781 шт: термін постачання 21-31 дні (днів) |
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RBQ10BM45AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 10A TO252Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 150 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 45 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1567 шт: термін постачання 21-31 дні (днів) |
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RFN20NS3SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 350V 20A LPDSCurrent - Reverse Leakage @ Vr: 10 µA @ 350 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A Voltage - DC Reverse (Vr) (Max): 350 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 412pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
на замовлення 244 шт: термін постачання 21-31 дні (днів) |
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RFN20NS6SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 20A LPDSCurrent - Average Rectified (Io): 20A Capacitance @ Vr, F: 322pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS |
на замовлення 705 шт: термін постачання 21-31 дні (днів) |
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RRE02VTM4SFHTR | Rohm Semiconductor |
Description: DIODE GP 400V 200MA TUMD2SMCurrent - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2SM Current - Average Rectified (Io): 200mA Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
на замовлення 53890 шт: термін постачання 21-31 дні (днів) |
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RTL020P02FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TUMT6Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4358 шт: термін постачання 21-31 дні (днів) |
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RFN20NS4SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 430V 20A LPDSQualification: AEC-Q101 Grade: Automotive Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 430 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Voltage - DC Reverse (Vr) (Max): 430 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 268pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns |
на замовлення 967 шт: термін постачання 21-31 дні (днів) |
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BD83732HFP-MTR | Rohm Semiconductor |
Description: IC LED DRVR LIN PWM 500MA HRP7Packaging: Cut Tape (CT) Package / Case: HRP-7 (7 Leads + Tab) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100Hz ~ 5kHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: HRP7 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1980 шт: термін постачання 21-31 дні (днів) |
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RB058LAM-60TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTMQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 4 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 35.3 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
на замовлення 5430 шт: термін постачання 21-31 дні (днів) |
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RB095BM-90FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 6A TO252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 150 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 8.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 13395 шт: термін постачання 21-31 дні (днів) |
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RB160VYM-40FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 1A TUMD2MQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 7.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 9212 шт: термін постачання 21-31 дні (днів) |
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RB238NS150FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 150V 40A LPDSPart Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 40A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 20.2 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 30 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 150 V Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1733 шт: термін постачання 21-31 дні (днів) |
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RF05VYM1SFHTR | Rohm Semiconductor |
Description: DIODE GEN PURP 100V 500MA TUMD2MCurrent - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 500mA Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
на замовлення 11825 шт: термін постачання 21-31 дні (днів) |
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RF202LAM2STFTR | Rohm Semiconductor |
Description: DIODE STANDARD 200V 2A PMDTMCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 7016 шт: термін постачання 21-31 дні (днів) |
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RF301BM2SFHTL | Rohm Semiconductor |
Description: SUPER FAST RECOVERY DIODES |
на замовлення 2301 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RF302LAM2STFTR | Rohm Semiconductor |
Description: DIODE STANDARD 200V 3A PMDTMQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
на замовлення 12301 шт: термін постачання 21-31 дні (днів) |
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RFN1LAM7STFTR | Rohm Semiconductor |
Description: DIODE GEN PURP 700V 800MA PMDTMCurrent - Average Rectified (Io): 800mA Technology: Standard Reverse Recovery Time (trr): 80 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 700 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 700 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM |
на замовлення 17698 шт: термін постачання 21-31 дні (днів) |
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RFN3BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252Supplier Device Package: TO-252 Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RR1VWM6STFTR | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 1A PMDEQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: 175°C (Max) Supplier Device Package: PMDE Current - Average Rectified (Io): 1A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
на замовлення 2728 шт: термін постачання 21-31 дні (днів) |
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BD1HC500FVM-CTR | Rohm Semiconductor |
Description: IC PWR SWITCH P-CHAN 1:1 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 500mOhm Input Type: CMOS Voltage - Supply (Vcc/Vdd): 4V ~ 18V Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-MSOP Fault Protection: Over Current, Over Temperature, UVLO Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4132 шт: термін постачання 21-31 дні (днів) |
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| RF2001NS2DFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 20A LPDS
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 200V 20A LPDS
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
на замовлення 111 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.22 грн |
| 10+ | 156.33 грн |
| 100+ | 108.64 грн |
| RB050LAM-60TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 26.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 60V 3A PMDTM
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 26.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
на замовлення 12659 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.68 грн |
| 10+ | 36.57 грн |
| 100+ | 29.81 грн |
| 500+ | 21.27 грн |
| 1000+ | 18.92 грн |
| RB085BM-40FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 10A TO252
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 12.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 40V 10A TO252
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 12.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 6381 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.12 грн |
| 10+ | 80.99 грн |
| 100+ | 54.53 грн |
| 500+ | 40.49 грн |
| 1000+ | 37.05 грн |
| RB160VYM-60FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 6.65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 6.65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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| RBQ20BM45AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 20A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 20A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2081 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.98 грн |
| 10+ | 71.54 грн |
| 100+ | 55.65 грн |
| 500+ | 44.27 грн |
| 1000+ | 36.06 грн |
| RBQ30NS45AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 647 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 159.81 грн |
| 10+ | 99.04 грн |
| 100+ | 67.55 грн |
| 500+ | 50.73 грн |
| RF501BM2SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
на замовлення 4666 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 66.97 грн |
| 100+ | 52.07 грн |
| 500+ | 41.42 грн |
| 1000+ | 33.74 грн |
| RK7002BMHZGT116 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12166 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.45 грн |
| 39+ | 7.92 грн |
| 100+ | 4.93 грн |
| 500+ | 3.38 грн |
| 1000+ | 2.97 грн |
| RRL025P03FRATR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TUMT6
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2.5A TUMT6
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
на замовлення 815 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.96 грн |
| 10+ | 33.90 грн |
| 100+ | 21.85 грн |
| 500+ | 15.62 грн |
| SP8M51FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N/P-CH 100V 3A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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| UM6K31NFHATCN |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.25A UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.81 грн |
| 15+ | 20.57 грн |
| 100+ | 13.06 грн |
| 500+ | 9.19 грн |
| 1000+ | 8.19 грн |
| RB238NS100FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 40A LPDS
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 24.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOTT 100V 40A LPDS
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 24.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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од. на суму грн.
| RBQ30NS65AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 16.1 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 65V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 16.1 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.54 грн |
| 10+ | 81.60 грн |
| 100+ | 56.71 грн |
| 500+ | 42.27 грн |
| BD83733HFP-MTR |
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Виробник: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1835 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.42 грн |
| 10+ | 140.56 грн |
| 25+ | 128.72 грн |
| 100+ | 108.51 грн |
| 250+ | 102.66 грн |
| 500+ | 99.13 грн |
| 1000+ | 94.65 грн |
| BR24A02FJ-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 324 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.84 грн |
| 10+ | 43.73 грн |
| 25+ | 43.24 грн |
| 50+ | 40.34 грн |
| 100+ | 36.07 грн |
| 250+ | 35.76 грн |
| BR24A08F-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.29 грн |
| 10+ | 55.31 грн |
| 25+ | 54.67 грн |
| 50+ | 50.98 грн |
| 100+ | 45.59 грн |
| 250+ | 45.20 грн |
| 500+ | 43.80 грн |
| BR24A16F-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
на замовлення 621 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.83 грн |
| 10+ | 62.40 грн |
| 25+ | 60.64 грн |
| 50+ | 55.67 грн |
| 100+ | 54.42 грн |
| 250+ | 52.76 грн |
| 500+ | 50.67 грн |
| BR24A32F-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 4919 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.59 грн |
| 10+ | 114.36 грн |
| 25+ | 111.11 грн |
| 50+ | 101.93 грн |
| 100+ | 99.59 грн |
| 250+ | 96.50 грн |
| 500+ | 92.63 грн |
| 1000+ | 90.35 грн |
| BR25H640FVT-2ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 8TSSOPB
Grade: Automotive
Supplier Device Package: 8-TSSOP-B
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 64KBIT SPI 8TSSOPB
Grade: Automotive
Supplier Device Package: 8-TSSOP-B
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.97 грн |
| 10+ | 96.38 грн |
| 25+ | 93.80 грн |
| 50+ | 87.58 грн |
| 100+ | 78.29 грн |
| 250+ | 78.06 грн |
| 500+ | 75.62 грн |
| 1000+ | 72.41 грн |
| RB558VYM150FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Schottky
Reverse Recovery Time (trr): 6.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 150V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Schottky
Reverse Recovery Time (trr): 6.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 15354 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.56 грн |
| 14+ | 23.24 грн |
| 100+ | 14.80 грн |
| 500+ | 10.43 грн |
| 1000+ | 9.32 грн |
| BAS40-04HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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| BAS40-05HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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од. на суму грн.
| BAS40-06HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1423 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 44+ | 6.93 грн |
| 100+ | 4.29 грн |
| 500+ | 2.93 грн |
| 1000+ | 2.57 грн |
| BAS40HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 120mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 120mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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од. на суму грн.
| BAT54AHMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
на замовлення 1431 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BAT54HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA SSD3
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 30V 200MA SSD3
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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од. на суму грн.
| BAT54SHMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 200MA SSD3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 30V 200MA SSD3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 18 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BAV170HMFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| BD00C0AWHFP-CTR |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR POS ADJ 1A HRP-5
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Voltage - Output (Max): 15V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR POS ADJ 1A HRP-5
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Voltage - Output (Max): 15V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 942 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 108.39 грн |
| 10+ | 76.57 грн |
| 25+ | 69.57 грн |
| 100+ | 58.04 грн |
| 250+ | 54.58 грн |
| 500+ | 52.49 грн |
| BD81842MUV-ME2 |
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Виробник: Rohm Semiconductor
Description: AUTOMOTIVE PANEL POWER MANAGEMEN
Part Status: Active
Supplier Device Package: VQFN24SV4040
Current - Supply: 1.2mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Applications: TFT-LCD Panels
Description: AUTOMOTIVE PANEL POWER MANAGEMEN
Part Status: Active
Supplier Device Package: VQFN24SV4040
Current - Supply: 1.2mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Applications: TFT-LCD Panels
на замовлення 2380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.27 грн |
| 10+ | 218.27 грн |
| 25+ | 200.89 грн |
| 100+ | 170.56 грн |
| 250+ | 162.01 грн |
| 500+ | 156.86 грн |
| 1000+ | 150.11 грн |
| RB055LAM-40TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 14.6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 3A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 14.6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 9631 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.47 грн |
| 11+ | 30.32 грн |
| 100+ | 22.04 грн |
| 500+ | 15.78 грн |
| 1000+ | 14.20 грн |
| RF2001NS3DFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 300V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 300V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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| RSS060P05FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 6A 8SOP
Description: MOSFET P-CH 45V 6A 8SOP
товару немає в наявності
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| RSS065N06FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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| RSS070N05FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 7A 8SOP
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 45V 7A 8SOP
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| RB088BM150FHTL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Current - Reverse Leakage @ Vr: 15 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 10.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: SCHOTTKY BARRIER DIODE
Current - Reverse Leakage @ Vr: 15 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 10.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 3145 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 110.76 грн |
| 10+ | 95.38 грн |
| 100+ | 74.35 грн |
| 500+ | 57.64 грн |
| 1000+ | 45.51 грн |
| RB098BM150FHTL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (CORRESPO
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 7 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: SCHOTTKY BARRIER DIODE (CORRESPO
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 7 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB225NS-40FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 27.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 27.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 327 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.86 грн |
| 10+ | 96.53 грн |
| 100+ | 65.72 грн |
| RB400DFHT146 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA SMD3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 7.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 500MA SMD3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 7.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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| RB400VYM-50FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 7.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 7.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 3167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.06 грн |
| 18+ | 17.83 грн |
| 100+ | 10.85 грн |
| 500+ | 7.90 грн |
| 1000+ | 7.04 грн |
| RB420DFHT146 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA SMD3
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
Description: DIODE SCHOTTKY 40V 100MA SMD3
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
на замовлення 2781 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.94 грн |
| 23+ | 13.26 грн |
| 100+ | 7.07 грн |
| 500+ | 5.83 грн |
| 1000+ | 5.47 грн |
| RBQ10BM45AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 10A TO252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1567 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.71 грн |
| 10+ | 48.15 грн |
| 100+ | 37.45 грн |
| 500+ | 29.79 грн |
| 1000+ | 24.27 грн |
| RFN20NS3SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 412pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: DIODE STANDARD 350V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 412pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
на замовлення 244 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.94 грн |
| 10+ | 78.93 грн |
| 100+ | 62.59 грн |
| RFN20NS6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 20A LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 322pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Description: DIODE STANDARD 600V 20A LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 322pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
на замовлення 705 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.62 грн |
| 10+ | 89.90 грн |
| 100+ | 65.48 грн |
| 500+ | 48.88 грн |
| RRE02VTM4SFHTR |
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Виробник: Rohm Semiconductor
Description: DIODE GP 400V 200MA TUMD2SM
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: DIODE GP 400V 200MA TUMD2SM
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
на замовлення 53890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.60 грн |
| 12+ | 25.75 грн |
| 100+ | 14.57 грн |
| 500+ | 9.06 грн |
| 1000+ | 6.94 грн |
| RTL020P02FRATR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 20V 2A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4358 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.63 грн |
| 11+ | 30.32 грн |
| 100+ | 19.44 грн |
| 500+ | 13.84 грн |
| 1000+ | 12.42 грн |
| RFN20NS4SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 430V 20A LPDS
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 430 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 268pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Description: DIODE STANDARD 430V 20A LPDS
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 430 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 268pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
на замовлення 967 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.47 грн |
| 10+ | 78.24 грн |
| 100+ | 58.21 грн |
| 500+ | 43.24 грн |
| BD83732HFP-MTR |
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Виробник: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.42 грн |
| 10+ | 140.56 грн |
| 25+ | 128.72 грн |
| 100+ | 108.51 грн |
| 250+ | 102.66 грн |
| 500+ | 99.13 грн |
| 1000+ | 94.65 грн |
| RB058LAM-60TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 35.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 3A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 35.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 5430 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.10 грн |
| 11+ | 28.34 грн |
| 100+ | 19.81 грн |
| 500+ | 14.17 грн |
| 1000+ | 12.74 грн |
| RB095BM-90FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 8.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 90V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 8.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 13395 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.83 грн |
| 10+ | 54.32 грн |
| 100+ | 42.21 грн |
| 500+ | 33.58 грн |
| 1000+ | 27.35 грн |
| RB160VYM-40FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 7.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 1A TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 7.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 9212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.69 грн |
| 18+ | 17.07 грн |
| 100+ | 10.96 грн |
| 500+ | 7.68 грн |
| 1000+ | 6.84 грн |
| RB238NS150FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 150V 40A LPDS
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 20.2 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY SCHOTT 150V 40A LPDS
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 20.2 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1733 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 181.97 грн |
| 10+ | 125.48 грн |
| 100+ | 98.67 грн |
| 500+ | 79.39 грн |
| RF05VYM1SFHTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 100V 500MA TUMD2M
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 100V 500MA TUMD2M
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
на замовлення 11825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.48 грн |
| 16+ | 19.20 грн |
| 100+ | 9.71 грн |
| 500+ | 7.43 грн |
| 1000+ | 5.51 грн |
| RF202LAM2STFTR |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 200V 2A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 200V 2A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 7016 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.10 грн |
| 10+ | 31.92 грн |
| 100+ | 24.25 грн |
| 500+ | 18.32 грн |
| 1000+ | 15.48 грн |
| RF301BM2SFHTL |
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Виробник: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODES
Description: SUPER FAST RECOVERY DIODES
на замовлення 2301 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RF302LAM2STFTR |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 200V 3A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 200V 3A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 12301 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.59 грн |
| 10+ | 41.29 грн |
| 100+ | 31.26 грн |
| 500+ | 22.74 грн |
| 1000+ | 20.62 грн |
| RFN1LAM7STFTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDTM
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 700 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Description: DIODE GEN PURP 700V 800MA PMDTM
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 700 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
на замовлення 17698 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.72 грн |
| 10+ | 35.12 грн |
| 100+ | 24.39 грн |
| 500+ | 17.87 грн |
| 1000+ | 14.52 грн |
| RFN3BM6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Description: DIODE GEN PURP 600V 3A TO252
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 53.41 грн |
| 100+ | 41.53 грн |
| 500+ | 33.03 грн |
| 1000+ | 26.91 грн |
| RR1VWM6STFTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1A PMDE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: PMDE
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1A PMDE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: PMDE
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
на замовлення 2728 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.27 грн |
| 15+ | 21.64 грн |
| 100+ | 12.98 грн |
| 500+ | 11.28 грн |
| 1000+ | 7.67 грн |
| BD1HC500FVM-CTR |
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Виробник: Rohm Semiconductor
Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: CMOS
Voltage - Supply (Vcc/Vdd): 4V ~ 18V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Over Current, Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: CMOS
Voltage - Supply (Vcc/Vdd): 4V ~ 18V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Over Current, Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4132 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.12 грн |
| 10+ | 55.46 грн |
| 25+ | 50.10 грн |
| 100+ | 41.53 грн |
| 250+ | 38.91 грн |
| 500+ | 37.34 грн |
| 1000+ | 35.94 грн |




























