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2SCR372P5T100Q 2SCR372P5T100Q Rohm Semiconductor 2scr372p5t100q-e.pdf Description: TRANS NPN 120V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SCR375P5T100Q 2SCR375P5T100Q Rohm Semiconductor 2scr375p5t100q-e.pdf Description: TRANS NPN 120V 1.5A MPT3
товару немає в наявності
В кошику  од. на суму  грн.
2SCR512P5T100 2SCR512P5T100 Rohm Semiconductor datasheet?p=2SCR512P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SCR513P5T100 2SCR513P5T100 Rohm Semiconductor datasheet?p=2SCR513P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+13.60 грн
2000+11.82 грн
3000+11.17 грн
5000+9.80 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SCR514P5T100 2SCR514P5T100 Rohm Semiconductor datasheet?p=2SCR514P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SCR533P5T100 2SCR533P5T100 Rohm Semiconductor datasheet?p=2SCR533P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SCR544P5T100 2SCR544P5T100 Rohm Semiconductor datasheet?p=2SCR544P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 2.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SCR552P5T100 2SCR552P5T100 Rohm Semiconductor datasheet?p=2SCR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 127000 шт:
термін постачання 21-31 дні (днів)
1000+14.16 грн
2000+12.37 грн
3000+11.72 грн
5000+10.71 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SCR553P5T100 2SCR553P5T100 Rohm Semiconductor datasheet?p=2SCR553P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+15.31 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SCR554P5T100 2SCR554P5T100 Rohm Semiconductor datasheet?p=2SCR554P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+16.63 грн
2000+14.51 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BM6204FS-EVK-001 BM6204FS-EVK-001 Rohm Semiconductor Description: EVAL BOARD FOR BM6204
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6204
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+9984.50 грн
В кошику  од. на суму  грн.
BM6205FS-EVK-001 BM6205FS-EVK-001 Rohm Semiconductor Description: EVAL BOARD FOR BM6205
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6205
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+9984.50 грн
В кошику  од. на суму  грн.
BM6206FS-EVK-001 BM6206FS-EVK-001 Rohm Semiconductor Description: EVAL BOARD FOR BM6206
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6206
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+9984.50 грн
В кошику  од. на суму  грн.
BM6207FS-EVK-001 BM6207FS-EVK-001 Rohm Semiconductor BM6207FS.pdf Description: EVAL BOARD FOR BM6207
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6207
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+9984.50 грн
В кошику  од. на суму  грн.
BM6209FS-EVK-001 BM6209FS-EVK-001 Rohm Semiconductor BM6209FS.pdf Description: EVAL BOARD FOR BM6209
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6209
товару немає в наявності
В кошику  од. на суму  грн.
2SCR293P5T100 2SCR293P5T100 Rohm Semiconductor datasheet?p=2SCR293P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 8693 шт:
термін постачання 21-31 дні (днів)
12+29.40 грн
15+21.78 грн
100+13.07 грн
500+11.36 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
2SCR372P5T100R 2SCR372P5T100R Rohm Semiconductor 2scr372p5t100q-e.pdf Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SCR372P5T100Q 2SCR372P5T100Q Rohm Semiconductor 2scr372p5t100q-e.pdf Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
5+73.49 грн
10+43.80 грн
100+28.63 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2SCR375P5T100R 2SCR375P5T100R Rohm Semiconductor 2scr375p5t100q-e.pdf Description: TRANS NPN 120V 1.5A MPT3
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
7+53.90 грн
10+44.35 грн
100+33.14 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2SCR375P5T100Q 2SCR375P5T100Q Rohm Semiconductor 2scr375p5t100q-e.pdf Description: TRANS NPN 120V 1.5A MPT3
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SCR512P5T100 2SCR512P5T100 Rohm Semiconductor datasheet?p=2SCR512P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
11+31.03 грн
13+25.24 грн
100+17.54 грн
500+12.85 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
2SCR513P5T100 2SCR513P5T100 Rohm Semiconductor datasheet?p=2SCR513P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 5394 шт:
термін постачання 21-31 дні (днів)
7+50.63 грн
11+30.12 грн
100+19.28 грн
500+13.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2SCR514P5T100 2SCR514P5T100 Rohm Semiconductor datasheet?p=2SCR514P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
9+36.75 грн
12+27.36 грн
100+16.43 грн
500+14.28 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
2SCR533P5T100 2SCR533P5T100 Rohm Semiconductor datasheet?p=2SCR533P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
10+34.30 грн
12+28.54 грн
100+19.82 грн
500+14.53 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
2SCR544P5T100 2SCR544P5T100 Rohm Semiconductor datasheet?p=2SCR544P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 2.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 939 шт:
термін постачання 21-31 дні (днів)
5+65.33 грн
10+39.08 грн
100+25.36 грн
500+18.26 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2SCR552P5T100 2SCR552P5T100 Rohm Semiconductor datasheet?p=2SCR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 128344 шт:
термін постачання 21-31 дні (днів)
6+64.51 грн
10+38.22 грн
100+24.76 грн
500+17.76 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SCR553P5T100 2SCR553P5T100 Rohm Semiconductor datasheet?p=2SCR553P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 2018 шт:
термін постачання 21-31 дні (днів)
6+56.35 грн
10+33.58 грн
100+21.59 грн
500+15.40 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SCR554P5T100 2SCR554P5T100 Rohm Semiconductor datasheet?p=2SCR554P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 5638 шт:
термін постачання 21-31 дні (днів)
6+60.43 грн
10+36.25 грн
100+23.34 грн
500+16.71 грн
Мінімальне замовлення: 6
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SCT3022ALGC11 SCT3022ALGC11 Rohm Semiconductor datasheet?p=SCT3022AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 1298 шт:
термін постачання 21-31 дні (днів)
1+3217.38 грн
30+2571.65 грн
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SCT3030ALGC11 SCT3030ALGC11 Rohm Semiconductor datasheet?p=SCT3030AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 8797 шт:
термін постачання 21-31 дні (днів)
1+1922.26 грн
30+1449.22 грн
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SCT3030KLGC11 SCT3030KLGC11 Rohm Semiconductor datasheet?p=SCT3030KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 72A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
1+4545.17 грн
30+4375.91 грн
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SCT3040KLGC11 SCT3040KLGC11 Rohm Semiconductor datasheet?p=SCT3040KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
на замовлення 459 шт:
термін постачання 21-31 дні (днів)
1+2520.83 грн
30+1906.98 грн
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SCT3060ALGC11 SCT3060ALGC11 Rohm Semiconductor datasheet?p=SCT3060AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 39A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 163 шт:
термін постачання 21-31 дні (днів)
1+1074.64 грн
30+566.96 грн
120+547.68 грн
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SCT3080KLGC11 SCT3080KLGC11 Rohm Semiconductor datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
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SCT3120ALGC11 SCT3120ALGC11 Rohm Semiconductor datasheet?p=SCT3120AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 3888 шт:
термін постачання 21-31 дні (днів)
1+676.14 грн
30+350.19 грн
120+334.78 грн
510+287.75 грн
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SCT3160KLGC11 SCT3160KLGC11 Rohm Semiconductor datasheet?p=SCT3160KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
на замовлення 1157 шт:
термін постачання 21-31 дні (днів)
1+405.85 грн
30+354.75 грн
120+354.66 грн
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FDZT40RB6.8 FDZT40RB6.8 Rohm Semiconductor FDZ6.8.pdf Description: DIODE ZENER 6.8V 100MW SMD0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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SCT3080ALGC11 SCT3080ALGC11 Rohm Semiconductor datasheet?p=SCT3080AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 549 шт:
термін постачання 21-31 дні (днів)
1+493.22 грн
30+419.65 грн
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BD68610EFV-E2 BD68610EFV-E2 Rohm Semiconductor Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: Parallel
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 20-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
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BD68610EFV-E2 BD68610EFV-E2 Rohm Semiconductor Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: Parallel
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 20-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
2+222.11 грн
10+134.94 грн
25+114.43 грн
100+85.64 грн
250+74.95 грн
Мінімальне замовлення: 2
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BD57020MWV-E2 BD57020MWV-E2 Rohm Semiconductor uqfn040v5050_1-e.pdf Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
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BD57015GWL-E2 BD57015GWL-E2 Rohm Semiconductor BD57015GWL.pdf Description: IC WIRELESS PWR REC UCSP50L4C
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 0V ~ 17.4V
Applications: Wireless Power Receiver
Current - Supply: 44mA, 27mA
Supplier Device Package: UCSP50L4C
Part Status: Not For New Designs
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BD57020MWV-E2 BD57020MWV-E2 Rohm Semiconductor uqfn040v5050_1-e.pdf Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
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BD57015GWL-E2 BD57015GWL-E2 Rohm Semiconductor BD57015GWL.pdf Description: IC WIRELESS PWR REC UCSP50L4C
Packaging: Cut Tape (CT)
Package / Case: 63-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 0V ~ 17.4V
Applications: Wireless Power Receiver
Current - Supply: 44mA, 27mA
Supplier Device Package: UCSP50L4C
Part Status: Not For New Designs
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BD71815AGW-E2 BD71815AGW-E2 Rohm Semiconductor datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Tape & Reel (TR)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+167.04 грн
Мінімальне замовлення: 2500
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SCS205KGHRC SCS205KGHRC Rohm Semiconductor datasheet?p=SCS205KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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SCS206AGHRC SCS206AGHRC Rohm Semiconductor datasheet?p=SCS206AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
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SCS208AGHRC SCS208AGHRC Rohm Semiconductor datasheet?p=SCS208AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Qualification: AEC-Q101
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SCS220AE2HRC SCS220AE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
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SCS220AGHRC SCS220AGHRC Rohm Semiconductor datasheet?p=SCS220AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
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SCS220KE2HRC SCS220KE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
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SCS220KGHRC SCS220KGHRC Rohm Semiconductor datasheet?p=SCS220KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
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SCS230AE2HRC SCS230AE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
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SCS240AE2HRC SCS240AE2HRC Rohm Semiconductor ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
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BD71815AGW-E2 BD71815AGW-E2 Rohm Semiconductor datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
на замовлення 9176 шт:
термін постачання 21-31 дні (днів)
1+328.27 грн
10+240.54 грн
25+221.56 грн
100+188.38 грн
250+179.06 грн
500+173.44 грн
1000+166.05 грн
В кошику  од. на суму  грн.
TFZVTR18B TFZVTR18B Rohm Semiconductor TFZV18B Description: ZENER DIODE
товару немає в наявності
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TFZVTR16B TFZVTR16B Rohm Semiconductor TFZV16B Description: DIODE ZENER 16V 500MW SOD323HE
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TFZVTR13B TFZVTR13B Rohm Semiconductor TFZV13B Description: ZENER DIODE
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TFZVTR2.0B TFZVTR2.0B Rohm Semiconductor TFZV2.0B Description: ZENER DIODE
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TFZVTR36B TFZVTR36B Rohm Semiconductor datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
товару немає в наявності
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2SCR372P5T100Q 2scr372p5t100q-e.pdf
2SCR372P5T100Q
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
товару немає в наявності
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2SCR375P5T100Q 2scr375p5t100q-e.pdf
2SCR375P5T100Q
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 1.5A MPT3
товару немає в наявності
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2SCR512P5T100 datasheet?p=2SCR512P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR512P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товару немає в наявності
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2SCR513P5T100 datasheet?p=2SCR513P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR513P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+13.60 грн
2000+11.82 грн
3000+11.17 грн
5000+9.80 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SCR514P5T100 datasheet?p=2SCR514P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR514P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
товару немає в наявності
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2SCR533P5T100 datasheet?p=2SCR533P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR533P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
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2SCR544P5T100 datasheet?p=2SCR544P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR544P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 2.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SCR552P5T100 datasheet?p=2SCR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR552P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 127000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+14.16 грн
2000+12.37 грн
3000+11.72 грн
5000+10.71 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SCR553P5T100 datasheet?p=2SCR553P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+15.31 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2SCR554P5T100 datasheet?p=2SCR554P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR554P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+16.63 грн
2000+14.51 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BM6204FS-EVK-001
BM6204FS-EVK-001
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6204
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6204
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9984.50 грн
В кошику  од. на суму  грн.
BM6205FS-EVK-001
BM6205FS-EVK-001
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6205
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6205
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9984.50 грн
В кошику  од. на суму  грн.
BM6206FS-EVK-001
BM6206FS-EVK-001
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6206
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6206
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9984.50 грн
В кошику  од. на суму  грн.
BM6207FS-EVK-001 BM6207FS.pdf
BM6207FS-EVK-001
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6207
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6207
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9984.50 грн
В кошику  од. на суму  грн.
BM6209FS-EVK-001 BM6209FS.pdf
BM6209FS-EVK-001
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM6209
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM6209
товару немає в наявності
В кошику  од. на суму  грн.
2SCR293P5T100 datasheet?p=2SCR293P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR293P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 8693 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.40 грн
15+21.78 грн
100+13.07 грн
500+11.36 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
2SCR372P5T100R 2scr372p5t100q-e.pdf
2SCR372P5T100R
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SCR372P5T100Q 2scr372p5t100q-e.pdf
2SCR372P5T100Q
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.49 грн
10+43.80 грн
100+28.63 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2SCR375P5T100R 2scr375p5t100q-e.pdf
2SCR375P5T100R
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 1.5A MPT3
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.90 грн
10+44.35 грн
100+33.14 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2SCR375P5T100Q 2scr375p5t100q-e.pdf
2SCR375P5T100Q
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 1.5A MPT3
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SCR512P5T100 datasheet?p=2SCR512P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR512P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.03 грн
13+25.24 грн
100+17.54 грн
500+12.85 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
2SCR513P5T100 datasheet?p=2SCR513P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR513P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 5394 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.63 грн
11+30.12 грн
100+19.28 грн
500+13.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2SCR514P5T100 datasheet?p=2SCR514P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR514P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+36.75 грн
12+27.36 грн
100+16.43 грн
500+14.28 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
2SCR533P5T100 datasheet?p=2SCR533P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR533P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.30 грн
12+28.54 грн
100+19.82 грн
500+14.53 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
2SCR544P5T100 datasheet?p=2SCR544P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR544P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 2.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 939 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+65.33 грн
10+39.08 грн
100+25.36 грн
500+18.26 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2SCR552P5T100 datasheet?p=2SCR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR552P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 128344 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+64.51 грн
10+38.22 грн
100+24.76 грн
500+17.76 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SCR553P5T100 datasheet?p=2SCR553P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR553P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 2018 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.35 грн
10+33.58 грн
100+21.59 грн
500+15.40 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SCR554P5T100 datasheet?p=2SCR554P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR554P5T100
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 5638 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.43 грн
10+36.25 грн
100+23.34 грн
500+16.71 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SCT3022ALGC11 datasheet?p=SCT3022AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3022ALGC11
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 1298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3217.38 грн
30+2571.65 грн
В кошику  од. на суму  грн.
SCT3030ALGC11 datasheet?p=SCT3030AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3030ALGC11
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 8797 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1922.26 грн
30+1449.22 грн
В кошику  од. на суму  грн.
SCT3030KLGC11 datasheet?p=SCT3030KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3030KLGC11
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 72A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 339W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4545.17 грн
30+4375.91 грн
В кошику  од. на суму  грн.
SCT3040KLGC11 datasheet?p=SCT3040KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3040KLGC11
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
на замовлення 459 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2520.83 грн
30+1906.98 грн
В кошику  од. на суму  грн.
SCT3060ALGC11 datasheet?p=SCT3060AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3060ALGC11
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 39A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 163 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1074.64 грн
30+566.96 грн
120+547.68 грн
В кошику  од. на суму  грн.
SCT3080KLGC11 datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KLGC11
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
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SCT3120ALGC11 datasheet?p=SCT3120AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3120ALGC11
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 3888 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+676.14 грн
30+350.19 грн
120+334.78 грн
510+287.75 грн
В кошику  од. на суму  грн.
SCT3160KLGC11 datasheet?p=SCT3160KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3160KLGC11
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 17A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
на замовлення 1157 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+405.85 грн
30+354.75 грн
120+354.66 грн
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FDZT40RB6.8 FDZ6.8.pdf
FDZT40RB6.8
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 100MW SMD0402
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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SCT3080ALGC11 datasheet?p=SCT3080AL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080ALGC11
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 549 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+493.22 грн
30+419.65 грн
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BD68610EFV-E2
BD68610EFV-E2
Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: Parallel
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 20-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
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BD68610EFV-E2
BD68610EFV-E2
Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: Parallel
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 20-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+222.11 грн
10+134.94 грн
25+114.43 грн
100+85.64 грн
250+74.95 грн
Мінімальне замовлення: 2
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BD57020MWV-E2 uqfn040v5050_1-e.pdf
BD57020MWV-E2
Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
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BD57015GWL-E2 BD57015GWL.pdf
BD57015GWL-E2
Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR REC UCSP50L4C
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 0V ~ 17.4V
Applications: Wireless Power Receiver
Current - Supply: 44mA, 27mA
Supplier Device Package: UCSP50L4C
Part Status: Not For New Designs
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BD57020MWV-E2 uqfn040v5050_1-e.pdf
BD57020MWV-E2
Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Supply: 5V
Applications: Wireless Power Transmitter
Supplier Device Package: UQFN040V5050
Part Status: Not For New Designs
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BD57015GWL-E2 BD57015GWL.pdf
BD57015GWL-E2
Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR REC UCSP50L4C
Packaging: Cut Tape (CT)
Package / Case: 63-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 0V ~ 17.4V
Applications: Wireless Power Receiver
Current - Supply: 44mA, 27mA
Supplier Device Package: UCSP50L4C
Part Status: Not For New Designs
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BD71815AGW-E2 datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD71815AGW-E2
Виробник: Rohm Semiconductor
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Tape & Reel (TR)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+167.04 грн
Мінімальне замовлення: 2500
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SCS205KGHRC datasheet?p=SCS205KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS205KGHRC
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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SCS206AGHRC datasheet?p=SCS206AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS206AGHRC
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Qualification: AEC-Q101
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SCS208AGHRC datasheet?p=SCS208AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS208AGHRC
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Qualification: AEC-Q101
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SCS220AE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS220AE2HRC
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
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SCS220AGHRC datasheet?p=SCS220AGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220AGHRC
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
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SCS220KE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS220KE2HRC
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Qualification: AEC-Q101
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SCS220KGHRC datasheet?p=SCS220KGHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220KGHRC
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 1200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1060pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Qualification: AEC-Q101
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SCS230AE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS230AE2HRC
Виробник: Rohm Semiconductor
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
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SCS240AE2HRC ?p_p_state=maximized&p_p_mode=view&saveLastPath=false&_com_liferay_login_web_portlet_LoginPortlet_mvcRenderCommandName=%2Flogin%2Flogin&p_p_id=com_liferay_login_web_portlet_LoginPortlet&p_p_lifecycle=0&_com_liferay_login_web_portlet_L
SCS240AE2HRC
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Qualification: AEC-Q101
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BD71815AGW-E2 datasheet?p=BD71815AGW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD71815AGW-E2
Виробник: Rohm Semiconductor
Description: IC REG 13OUT BUCK/LDO 55UCSP
Packaging: Cut Tape (CT)
Package / Case: 55-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.9V ~ 5.5V
Frequency - Switching: 6MHz
Topology: Step-Down (Buck) Synchronous (5), Linear (LDO) (8)
Supplier Device Package: UCSP55M4C
Voltage/Current - Output 1: Programmable, 1A
Voltage/Current - Output 2: Programmable, 800mA
Voltage/Current - Output 3: Programmable, 500mA
w/LED Driver: Yes
w/Supervisor: No
w/Sequencer: Yes
Part Status: Active
Number of Outputs: 13
на замовлення 9176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+328.27 грн
10+240.54 грн
25+221.56 грн
100+188.38 грн
250+179.06 грн
500+173.44 грн
1000+166.05 грн
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TFZVTR18B TFZV18B
TFZVTR18B
Виробник: Rohm Semiconductor
Description: ZENER DIODE
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TFZVTR16B TFZV16B
TFZVTR16B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW SOD323HE
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TFZVTR13B TFZV13B
TFZVTR13B
Виробник: Rohm Semiconductor
Description: ZENER DIODE
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TFZVTR2.0B TFZV2.0B
TFZVTR2.0B
Виробник: Rohm Semiconductor
Description: ZENER DIODE
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TFZVTR36B datasheet?p=TFZV36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZVTR36B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW SOD323HE
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: TUMD2M
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 27 V
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