Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103512) > Сторінка 778 з 1726
| Фото | Назва | Виробник | Інформація |
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RGPZ10BM40FHTL | Rohm Semiconductor |
Description: IGBT 460V 20A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: TO-252 Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 14 nC Grade: Automotive Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 460 V Power - Max: 107 W Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BD433M5FP2-CZE2 | Rohm Semiconductor |
Description: IC REG LIN 3.3V 500MA TO263-3FPackaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: TO-263-3F Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Grade: Automotive Part Status: Active PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.75V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 175 µA Qualification: AEC-Q100 |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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RGPR30BM40HRTL | Rohm Semiconductor |
Description: IGBT 430V 30A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: TO-252 Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 22 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 125 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3783 шт: термін постачання 21-31 дні (днів) |
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RGPR30NS40HRTL | Rohm Semiconductor |
Description: IGBT 430V 30A IGNITION LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: LPDS Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 22 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 125 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1032 шт: термін постачання 21-31 дні (днів) |
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RGPZ10BM40FHTL | Rohm Semiconductor |
Description: IGBT 460V 20A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: TO-252 Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 14 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 460 V Power - Max: 107 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7413 шт: термін постачання 21-31 дні (днів) |
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BD433M5FP2-CZE2 | Rohm Semiconductor |
Description: IC REG LIN 3.3V 500MA TO263-3FPackaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: TO-263-3F Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 60dB (120Hz) Voltage Dropout (Max): 0.75V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 175 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1158 шт: термін постачання 21-31 дні (днів) |
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BD90C0AFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 9V 1A TO252-3Current - Supply (Max): 2.5 mA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.5V @ 500mA PSRR: 50dB (120Hz) Part Status: Active Voltage - Output (Min/Fixed): 9V Supplier Device Package: TO-252-3 Number of Regulators: 1 Voltage - Input (Max): 26.5V Current - Quiescent (Iq): 2.5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Grade: Automotive Qualification: AEC-Q100 Current - Output: 1A |
на замовлення 1325 шт: термін постачання 21-31 дні (днів) |
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RF601BM2DFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 6A TO252Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2300 шт: термін постачання 21-31 дні (днів) |
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RSF015N06FRATL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 1.5A TUMT3Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Grade: Automotive Supplier Device Package: TUMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 5889 шт: термін постачання 21-31 дні (днів) |
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RSX071VYM30FHTR | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE (AEC-Q101 |
на замовлення 2829 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB520CS-30FHT2RA | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MAVMN2Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 735 шт: термін постачання 21-31 дні (днів) |
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RSJ250P10FRATL | Rohm Semiconductor |
Description: MOSFET P-CH 100V 25A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4190 шт: термін постачання 21-31 дні (днів) |
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RSX101VYM30FHTR | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE (AEC-Q101 |
на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BD50C0AFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 1A TO252Qualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 2.5 mA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.5V @ 500mA PSRR: 55dB (120Hz) Part Status: Active Voltage - Output (Min/Fixed): 5V Supplier Device Package: TO-252 Number of Regulators: 1 Voltage - Input (Max): 26.5V Current - Quiescent (Iq): 2.5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 1A Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 4482 шт: термін постачання 21-31 дні (днів) |
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BD50GC0MEFJ-ME2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 1.5A 8HTSOPQualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 1.2 mA Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 1.2V @ 1A Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 5V Supplier Device Package: 8-HTSOP-J Number of Regulators: 1 Voltage - Input (Max): 14V Output Configuration: Positive Operating Temperature: -40°C ~ 105°C Current - Output: 1A Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 428 шт: термін постачання 21-31 дні (днів) |
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BR24A02FVM-WMTR | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOPQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 256 x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 2Kbit Mounting Type: Surface Mount Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) |
на замовлення 577 шт: термін постачання 21-31 дні (днів) |
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DA228KFHT146 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA SMD3Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SMD3 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection |
на замовлення 1702 шт: термін постачання 21-31 дні (днів) |
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RFN10BM3SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 350V 10A TO252Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 10A Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Voltage - DC Reverse (Vr) (Max): 350 V |
на замовлення 4195 шт: термін постачання 21-31 дні (днів) |
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RFN6BM2DFHTL | Rohm Semiconductor |
Description: SUPER FAST RECOVERY DIODE (AEC-Q |
на замовлення 362 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB095BM-60FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 6A TO252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 300 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Reverse Recovery Time (trr): 8.3 ns |
на замовлення 3882 шт: термін постачання 21-31 дні (днів) |
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RF505BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 5A Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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BD80C0AFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 8V 1A TO252-3Qualification: AEC-Q100 Current - Supply (Max): 2.5 mA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.5V @ 500mA PSRR: 50dB (120Hz) Grade: Automotive Voltage - Output (Min/Fixed): 8V Supplier Device Package: TO-252 Number of Regulators: 1 Voltage - Input (Max): 26.5V Current - Quiescent (Iq): 2.5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 1A Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1730 шт: термін постачання 21-31 дні (днів) |
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DAN222WMFHTL | Rohm Semiconductor |
Description: SWITCHING DIODES (CORRESPONDS TO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR24A01AF-WME2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPSupplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 1Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 128 x 8 |
на замовлення 1081 шт: термін постачання 21-31 дні (днів) |
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BR24A02F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPMemory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 2Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 256 x 8 |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR24A04F-WME2 | Rohm Semiconductor |
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8 |
на замовлення 2395 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DAP222WMFHTL | Rohm Semiconductor |
Description: SWITCHING DIODES (CORRESPONDS TO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DAN222MFHT2L | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA VMD3Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: VMD3 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Cathode Technology: Standard Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6939 шт: термін постачання 21-31 дні (днів) |
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RSL020P03FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TUMT6Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 7403 шт: термін постачання 21-31 дні (днів) |
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DAP222MFHT2L | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA VMD3Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: VMD3 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3845 шт: термін постачання 21-31 дні (днів) |
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RFN10BM6SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A TO252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2504 шт: термін постачання 21-31 дні (днів) |
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RFN10NS6SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A LPDSCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 169pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 860 шт: термін постачання 21-31 дні (днів) |
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RHU003N03FRAT106 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 300MA UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: UMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 823 шт: термін постачання 21-31 дні (днів) |
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SP8M24FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 4.5A 8SOPTechnology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Not For New Designs Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 45V Power - Max: 2W Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M4FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 9A 8SOPCurrent - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M5FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 6A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8M6FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 5A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB095BM-40FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 6A TO252Qualification: AEC-Q101 Grade: Automotive Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 11.4 ns |
на замовлення 251 шт: термін постачання 21-31 дні (днів) |
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RJ1U330AAFRGTL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 33A LPTSInput Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 244 шт: термін постачання 21-31 дні (днів) |
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SP8K32FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 4.5A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K33FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 5A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K52FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 3A 8SOPQualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Part Status: Not For New Designs |
на замовлення 2460 шт: термін постачання 21-31 дні (днів) |
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SP8M21FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 6A 8SOPGate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Drain to Source Voltage (Vdss): 45V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RJK005N03FRAT146 | Rohm Semiconductor |
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101 |
на замовлення 3878 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RSS070P05FRATB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 7A 8SOP |
на замовлення 1820 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RSS100N03FRATB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2072 шт: термін постачання 21-31 дні (днів) |
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BD90C0AWFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 9V 1A TO252-5Qualification: AEC-Q100 Grade: Automotive Voltage - Input (Max): 26.5V Current - Quiescent (Iq): 2.5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 1A Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Cut Tape (CT) Supplier Device Package: TO-252-5 Number of Regulators: 1 Part Status: Active Current - Supply (Max): 2.5 mA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.5V @ 500mA PSRR: 50dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 9V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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BR24A01AFJ-WME2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ |
на замовлення 2293 шт: термін постачання 21-31 дні (днів) |
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BR25H640F-2ACE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOPQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 8K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Grade: Automotive Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 957 шт: термін постачання 21-31 дні (днів) |
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DAN217UMFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 200 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RB085BM-90FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 90V 10A TO252Qualification: AEC-Q101 Grade: Automotive Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 150 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 7.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
на замовлення 2313 шт: термін постачання 21-31 дні (днів) |
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RB168VYM150FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 1A TUMD2MPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.8 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 19328 шт: термін постачання 21-31 дні (днів) |
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RB218NS150FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 150V 20A LPDSOperating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 14.8 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 20 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active |
на замовлення 11744 шт: термін постачання 21-31 дні (днів) |
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RR601BM4SFHTL | Rohm Semiconductor |
Description: RECTIFYING DIODE (AEC-Q101 QUALI |
на замовлення 1229 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RUC002N05HZGT116 | Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1456 шт: термін постачання 21-31 дні (днів) |
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RUF025N02FRATL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2.5A TUMT3Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2743 шт: термін постачання 21-31 дні (днів) |
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SP8K22FRATB | Rohm Semiconductor |
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP |
на замовлення 2442 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K24FRATB | Rohm Semiconductor |
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP |
на замовлення 2349 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SP8K31FRATB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 3.5A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DAN202UMFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3FSupplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 150°C (Max) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1033 шт: термін постачання 21-31 дні (днів) |
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| RGPZ10BM40FHTL |
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Виробник: Rohm Semiconductor
Description: IGBT 460V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Supplier Device Package: TO-252
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Gate Charge: 14 nC
Grade: Automotive
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 460 V
Power - Max: 107 W
Qualification: AEC-Q101
Description: IGBT 460V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Supplier Device Package: TO-252
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Gate Charge: 14 nC
Grade: Automotive
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 460 V
Power - Max: 107 W
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 64.36 грн |
| 5000+ | 58.27 грн |
| BD433M5FP2-CZE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 3.3V 500MA TO263-3F
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.75V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 500MA TO263-3F
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.75V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 175 µA
Qualification: AEC-Q100
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 102.68 грн |
| RGPR30BM40HRTL |
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Виробник: Rohm Semiconductor
Description: IGBT 430V 30A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Supplier Device Package: TO-252
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Gate Charge: 22 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 430V 30A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Supplier Device Package: TO-252
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Gate Charge: 22 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3783 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 172.47 грн |
| 10+ | 107.12 грн |
| 100+ | 73.38 грн |
| 500+ | 55.32 грн |
| 1000+ | 55.11 грн |
| RGPR30NS40HRTL |
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Виробник: Rohm Semiconductor
Description: IGBT 430V 30A IGNITION LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Supplier Device Package: LPDS
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Gate Charge: 22 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 430V 30A IGNITION LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Supplier Device Package: LPDS
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Gate Charge: 22 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1032 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 181.97 грн |
| 10+ | 113.29 грн |
| 100+ | 77.81 грн |
| 500+ | 59.28 грн |
| RGPZ10BM40FHTL |
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Виробник: Rohm Semiconductor
Description: IGBT 460V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Supplier Device Package: TO-252
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 460 V
Power - Max: 107 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 460V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Supplier Device Package: TO-252
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 460 V
Power - Max: 107 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7413 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 212.03 грн |
| 10+ | 132.11 грн |
| 100+ | 91.19 грн |
| 500+ | 69.15 грн |
| 1000+ | 66.94 грн |
| BD433M5FP2-CZE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 3.3V 500MA TO263-3F
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.75V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 175 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 500MA TO263-3F
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-3F
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 0.75V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 175 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1158 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 183.55 грн |
| 10+ | 131.88 грн |
| 25+ | 120.65 грн |
| 100+ | 101.64 грн |
| 250+ | 96.12 грн |
| BD90C0AFP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 9V 1A TO252-3
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 50dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 9V
Supplier Device Package: TO-252-3
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Grade: Automotive
Qualification: AEC-Q100
Current - Output: 1A
Description: IC REG LINEAR 9V 1A TO252-3
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 50dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 9V
Supplier Device Package: TO-252-3
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Grade: Automotive
Qualification: AEC-Q100
Current - Output: 1A
на замовлення 1325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.86 грн |
| 10+ | 58.36 грн |
| 25+ | 52.78 грн |
| 100+ | 43.81 грн |
| 250+ | 41.07 грн |
| 500+ | 39.42 грн |
| 1000+ | 37.44 грн |
| RF601BM2DFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 6A TO252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 200V 6A TO252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 80.70 грн |
| 10+ | 63.08 грн |
| 100+ | 49.08 грн |
| 500+ | 39.04 грн |
| 1000+ | 31.80 грн |
| RSF015N06FRATL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TUMT3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 1.5A TUMT3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 5889 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 13+ | 23.69 грн |
| 100+ | 15.08 грн |
| 500+ | 10.66 грн |
| 1000+ | 9.35 грн |
| RSX071VYM30FHTR |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
на замовлення 2829 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB520CS-30FHT2RA |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 735 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.32 грн |
| 21+ | 14.93 грн |
| 100+ | 10.18 грн |
| 500+ | 7.12 грн |
| RSJ250P10FRATL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 178.01 грн |
| 10+ | 110.55 грн |
| 100+ | 75.77 грн |
| 500+ | 57.16 грн |
| RSX101VYM30FHTR |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BD50C0AFP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 1A TO252
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-252
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 1A TO252
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-252
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 4482 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.82 грн |
| 10+ | 61.18 грн |
| 25+ | 55.37 грн |
| 100+ | 45.96 грн |
| 250+ | 43.09 грн |
| 500+ | 41.36 грн |
| 1000+ | 39.28 грн |
| BD50GC0MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 1.5A 8HTSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 14V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 1.5A 8HTSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 14V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 428 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.08 грн |
| 10+ | 83.42 грн |
| 25+ | 70.85 грн |
| 100+ | 53.22 грн |
| 250+ | 46.73 грн |
| BR24A02FVM-WMTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
на замовлення 577 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.47 грн |
| 10+ | 41.45 грн |
| 25+ | 40.93 грн |
| 50+ | 38.17 грн |
| 100+ | 34.11 грн |
| 250+ | 33.83 грн |
| 500+ | 32.78 грн |
| DA228KFHT146 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA SMD3
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Description: DIODE ARRAY GP 80V 100MA SMD3
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
на замовлення 1702 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.53 грн |
| 21+ | 15.08 грн |
| 100+ | 8.15 грн |
| 500+ | 6.78 грн |
| 1000+ | 6.34 грн |
| RFN10BM3SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 350V 10A TO252
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 350 V
Description: DIODE STANDARD 350V 10A TO252
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 350 V
на замовлення 4195 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.47 грн |
| 10+ | 72.76 грн |
| 100+ | 50.98 грн |
| 500+ | 37.66 грн |
| 1000+ | 34.39 грн |
| RFN6BM2DFHTL |
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Виробник: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE (AEC-Q
Description: SUPER FAST RECOVERY DIODE (AEC-Q
на замовлення 362 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB095BM-60FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 8.3 ns
Description: DIODE ARRAY SCHOTT 60V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 8.3 ns
на замовлення 3882 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.62 грн |
| 10+ | 54.85 грн |
| 100+ | 42.66 грн |
| 500+ | 33.94 грн |
| 1000+ | 27.65 грн |
| RF505BM6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 5A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 113.93 грн |
| 10+ | 98.13 грн |
| BD80C0AFP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 8V 1A TO252-3
Qualification: AEC-Q100
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 50dB (120Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 8V
Supplier Device Package: TO-252
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 8V 1A TO252-3
Qualification: AEC-Q100
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 50dB (120Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 8V
Supplier Device Package: TO-252
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1730 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.48 грн |
| 10+ | 86.78 грн |
| 25+ | 82.37 грн |
| 100+ | 63.49 грн |
| 250+ | 59.35 грн |
| 500+ | 52.45 грн |
| 1000+ | 40.73 грн |
| DAN222WMFHTL |
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Виробник: Rohm Semiconductor
Description: SWITCHING DIODES (CORRESPONDS TO
Description: SWITCHING DIODES (CORRESPONDS TO
товару немає в наявності
В кошику
од. на суму грн.
| BR24A01AF-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOP
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 128 x 8
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOP
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 128 x 8
на замовлення 1081 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.56 грн |
| 10+ | 35.43 грн |
| 25+ | 34.56 грн |
| 50+ | 31.74 грн |
| 100+ | 31.04 грн |
| 250+ | 30.13 грн |
| 500+ | 28.95 грн |
| 1000+ | 28.27 грн |
| BR24A02F-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOP
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOP
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BR24A04F-WME2 |
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Виробник: Rohm Semiconductor
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8
Description: EEPROM SERIAL-I2C 4K-BIT 512 X 8
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DAP222WMFHTL |
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Виробник: Rohm Semiconductor
Description: SWITCHING DIODES (CORRESPONDS TO
Description: SWITCHING DIODES (CORRESPONDS TO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DAN222MFHT2L |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA VMD3
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 80V 100MA VMD3
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6939 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.36 грн |
| 25+ | 12.34 грн |
| 100+ | 7.73 грн |
| 500+ | 5.34 грн |
| 1000+ | 4.72 грн |
| 2000+ | 4.20 грн |
| RSL020P03FRATR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 2A TUMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 7403 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.56 грн |
| 10+ | 33.52 грн |
| 100+ | 22.98 грн |
| 500+ | 18.32 грн |
| 1000+ | 16.55 грн |
| DAP222MFHT2L |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA VMD3
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 80V 100MA VMD3
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.69 грн |
| 19+ | 16.30 грн |
| 100+ | 10.23 грн |
| 500+ | 7.14 грн |
| 1000+ | 6.34 грн |
| 2000+ | 5.67 грн |
| RFN10BM6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 600V 10A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.11 грн |
| 10+ | 92.79 грн |
| 100+ | 63.95 грн |
| 500+ | 47.69 грн |
| 1000+ | 43.73 грн |
| RFN10NS6SFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 169pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 600V 10A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 169pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 860 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.53 грн |
| 10+ | 97.98 грн |
| 100+ | 66.66 грн |
| 500+ | 49.79 грн |
| RHU003N03FRAT106 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
на замовлення 823 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.57 грн |
| 26+ | 12.04 грн |
| 100+ | 7.54 грн |
| 500+ | 5.23 грн |
| SP8M24FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| SP8M4FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A 8SOP
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
Description: MOSFET N/P-CH 30V 9A 8SOP
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
товару немає в наявності
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| SP8M5FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 6A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| SP8M6FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| RB095BM-40FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Description: DIODE ARRAY SCHOTT 40V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
на замовлення 251 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.62 грн |
| 10+ | 57.83 грн |
| 100+ | 40.04 грн |
| RJ1U330AAFRGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 250V 33A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 244 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 324.38 грн |
| 10+ | 280.67 грн |
| 100+ | 229.93 грн |
| SP8K32FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| SP8K33FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| SP8K52FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 3A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Part Status: Not For New Designs
Description: MOSFET 2N-CH 100V 3A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Part Status: Not For New Designs
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.37 грн |
| 10+ | 58.51 грн |
| 100+ | 45.49 грн |
| 500+ | 36.18 грн |
| 1000+ | 29.48 грн |
| SP8M21FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Description: MOSFET N/P-CH 45V 6A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
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| RJK005N03FRAT146 |
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Виробник: Rohm Semiconductor
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101
Description: 2.5V DRIVE NCH MOSFET (AEC-Q101
на замовлення 3878 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RSS070P05FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Description: MOSFET P-CH 45V 7A 8SOP
на замовлення 1820 шт:
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| RSS100N03FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2072 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.90 грн |
| 10+ | 60.03 грн |
| 100+ | 39.88 грн |
| 500+ | 29.30 грн |
| 1000+ | 26.69 грн |
| BD90C0AWFP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 9V 1A TO252-5
Qualification: AEC-Q100
Grade: Automotive
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252-5
Number of Regulators: 1
Part Status: Active
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 50dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 9V
Description: IC REG LINEAR 9V 1A TO252-5
Qualification: AEC-Q100
Grade: Automotive
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252-5
Number of Regulators: 1
Part Status: Active
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 50dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 9V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.67 грн |
| 10+ | 101.63 грн |
| BR24A01AFJ-WME2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ
Description: IC EEPROM 1KBIT I2C 400KHZ 8SOPJ
на замовлення 2293 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.10 грн |
| 10+ | 42.74 грн |
| 25+ | 39.71 грн |
| 50+ | 37.08 грн |
| 100+ | 32.92 грн |
| 250+ | 32.51 грн |
| 500+ | 31.49 грн |
| 1000+ | 30.65 грн |
| BR25H640F-2ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 957 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.97 грн |
| 10+ | 95.99 грн |
| 25+ | 93.37 грн |
| 50+ | 87.17 грн |
| 100+ | 77.93 грн |
| 250+ | 77.70 грн |
| 500+ | 75.28 грн |
| DAN217UMFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA UMD3F
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB085BM-90FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 10A TO252
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 7.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: DIODE ARR SCHOTT 90V 10A TO252
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 7.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.86 грн |
| 10+ | 95.77 грн |
| 100+ | 65.03 грн |
| 500+ | 48.64 грн |
| 1000+ | 44.65 грн |
| RB168VYM150FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.8 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.8 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19328 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.59 грн |
| 10+ | 33.67 грн |
| 100+ | 22.19 грн |
| 500+ | 15.94 грн |
| 1000+ | 14.36 грн |
| RB218NS150FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 150V 20A LPDS
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 14.8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Description: DIODE ARR SCHOTT 150V 20A LPDS
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 14.8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
на замовлення 11744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.55 грн |
| 10+ | 89.59 грн |
| 100+ | 71.30 грн |
| 500+ | 56.62 грн |
| RR601BM4SFHTL |
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Виробник: Rohm Semiconductor
Description: RECTIFYING DIODE (AEC-Q101 QUALI
Description: RECTIFYING DIODE (AEC-Q101 QUALI
на замовлення 1229 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RUC002N05HZGT116 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1456 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.24 грн |
| 37+ | 8.30 грн |
| 100+ | 5.14 грн |
| 500+ | 3.52 грн |
| 1000+ | 3.10 грн |
| RUF025N02FRATL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2743 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.31 грн |
| 12+ | 26.44 грн |
| 100+ | 16.94 грн |
| 500+ | 12.05 грн |
| 1000+ | 10.81 грн |
| SP8K22FRATB |
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Виробник: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
на замовлення 2442 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SP8K24FRATB |
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Виробник: Rohm Semiconductor
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
Description: 4V DRIVE NCH+NCH MOSFET (CORRESP
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SP8K31FRATB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DAN202UMFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 80V 100MA UMD3F
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 30+ | 10.36 грн |
| 100+ | 6.45 грн |
| 500+ | 4.44 грн |
| 1000+ | 3.91 грн |






























