Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104262) > Сторінка 811 з 1738
Фото | Назва | Виробник | Інформація |
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R6006JNJGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R6007JNJGTL | Rohm Semiconductor |
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на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6009JNJGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6007JND3TL1 | Rohm Semiconductor |
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на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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R6009JND3TL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R6007JNXC7G | Rohm Semiconductor |
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на замовлення 2036 шт: термін постачання 21-31 дні (днів) |
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R6009JNXC7G | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 1899 шт: термін постачання 21-31 дні (днів) |
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R6025JNXC7G | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 7V @ 4.5mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V |
на замовлення 1961 шт: термін постачання 21-31 дні (днів) |
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R6025JNZ4C13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 7V @ 4.5mA Supplier Device Package: TO-247G Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V |
на замовлення 597 шт: термін постачання 21-31 дні (днів) |
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R6030JNZ4C13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-247G Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 391 шт: термін постачання 21-31 дні (днів) |
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R6004JNJGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 7V @ 450µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V |
на замовлення 993 шт: термін постачання 21-31 дні (днів) |
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R6006JNJGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
на замовлення 1098 шт: термін постачання 21-31 дні (днів) |
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R6007JNJGTL | Rohm Semiconductor |
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на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
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R6009JNJGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6009JND3TL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 7V @ 1.38mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD16950EFV-CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 5.5V Input Type: Non-Inverting Supplier Device Package: 24-HTSSOP-B Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BD7F100EFJ-EVK-001 | Rohm Semiconductor |
![]() Packaging: Box Voltage - Output: 5V Voltage - Input: 24V Current - Output: 1A Frequency - Switching: 400kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: BD7F100 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD7F200EFJ-EVK-001 | Rohm Semiconductor |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD7F200EFJ-EVK-002 | Rohm Semiconductor |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD7F200HFN-EVK-001 | Rohm Semiconductor |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD7F200HFN-EVK-002 | Rohm Semiconductor |
![]() Packaging: Box Voltage - Output: 5V Voltage - Input: 24V Current - Output: 2A Frequency - Switching: 400kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: BD7F200 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Isolated |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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BA12004DF-ZE2 | Rohm Semiconductor |
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на замовлення 2418 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BA12003DF-ZE2 | Rohm Semiconductor |
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на замовлення 2231 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LM339F-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 14-SOP Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 4.5mV @ 32V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 5684 шт: термін постачання 21-31 дні (днів) |
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BD16950EFV-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 5.5V Input Type: Non-Inverting Supplier Device Package: 24-HTSSOP-B Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4888 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ121T-LBZ | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 131 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ122T-LBZ | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 220 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ123T-LBZ | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BM2SCQ124T-LBZ | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 223 шт: термін постачання 21-31 дні (днів) |
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BSS64AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 140MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS63AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS5130AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS4130AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD71837AMWV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Current - Supply: 197µA Supplier Device Package: UQFN68CV8080 Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BD71837AMWV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Current - Supply: 197µA Supplier Device Package: UQFN68CV8080 Part Status: Active |
на замовлення 2706 шт: термін постачання 21-31 дні (днів) |
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BSS4130AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 248 шт: термін постачання 21-31 дні (днів) |
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BSS5130AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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BSS63AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
на замовлення 2307 шт: термін постачання 21-31 дні (днів) |
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BSS64AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 140MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901DT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
CSL0901MT | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901PT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901UT | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 280mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901VT | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 180mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 630nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
CSL0901WT | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901YT | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 320mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 590nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901DT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
на замовлення 219 шт: термін постачання 21-31 дні (днів) |
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CSL0901MT | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901PT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901UT | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 280mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 1915 шт: термін постачання 21-31 дні (днів) |
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CSL0901VT | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 180mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 630nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 1067 шт: термін постачання 21-31 дні (днів) |
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CSL0901WT | Rohm Semiconductor |
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на замовлення 1366 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901YT | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 320mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 590nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RGCL60TS60DGC11 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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RGCL60TS60GC11 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
на замовлення 362 шт: термін постачання 21-31 дні (днів) |
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RGCL80TS60DGC11 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 148 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RGCL80TS60GC11 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 148 W |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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RB085T-90NZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 87 шт: термін постачання 21-31 дні (днів) |
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RGC80TSX8RGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 80ns/565ns Switching Energy: 1.85mJ (on), 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 468 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1800 V Current - Collector Pulsed (Icm): 120 A Power - Max: 535 W |
на замовлення 743 шт: термін постачання 21-31 дні (днів) |
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RGCL60TK60DGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 54 W |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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R6006JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
R6007JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
Description: MOSFET N-CH 600V 7A LPTS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 109.60 грн |
R6009JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 108.61 грн |
R6007JND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO252
Description: MOSFET N-CH 600V 7A TO252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
R6009JND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 97.08 грн |
R6007JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
Description: MOSFET N-CH 600V 7A TO220FM
на замовлення 2036 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 231.30 грн |
10+ | 199.67 грн |
100+ | 163.62 грн |
500+ | 130.71 грн |
1000+ | 110.24 грн |
2000+ | 104.73 грн |
R6009JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 1899 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 82.84 грн |
50+ | 64.09 грн |
100+ | 52.73 грн |
500+ | 44.68 грн |
R6025JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 479.00 грн |
50+ | 248.70 грн |
100+ | 228.21 грн |
500+ | 213.23 грн |
R6025JNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 775.91 грн |
30+ | 443.04 грн |
120+ | 376.29 грн |
510+ | 325.27 грн |
R6030JNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 30A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 391 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 897.30 грн |
30+ | 517.28 грн |
120+ | 441.15 грн |
R6004JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 7V @ 450µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
на замовлення 993 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 114.01 грн |
10+ | 91.30 грн |
100+ | 72.68 грн |
500+ | 61.59 грн |
R6006JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Description: MOSFET N-CH 600V 6A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
на замовлення 1098 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 262.47 грн |
10+ | 164.99 грн |
100+ | 114.79 грн |
500+ | 87.59 грн |
R6007JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
Description: MOSFET N-CH 600V 7A LPTS
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 223.10 грн |
10+ | 192.88 грн |
100+ | 155.04 грн |
500+ | 119.54 грн |
R6009JNJGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 209.97 грн |
10+ | 169.89 грн |
100+ | 137.41 грн |
500+ | 114.63 грн |
R6009JND3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.43 грн |
10+ | 183.48 грн |
100+ | 147.50 грн |
500+ | 113.73 грн |
1000+ | 94.23 грн |
BD16950EFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 242.19 грн |
BD7F100EFJ-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD7F100
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 1A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Description: EVAL BOARD FOR BD7F100
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 1A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
товару немає в наявності
В кошику
од. на суму грн.
BD7F200EFJ-EVK-001 |
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Виробник: Rohm Semiconductor
Description: BD7F200EFJ-EVK-001 EVALUATION BO
Description: BD7F200EFJ-EVK-001 EVALUATION BO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BD7F200EFJ-EVK-002 |
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Виробник: Rohm Semiconductor
Description: BD7F200EFJ-EVK-002 EVALUATION BO
Description: BD7F200EFJ-EVK-002 EVALUATION BO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BD7F200HFN-EVK-001 |
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Виробник: Rohm Semiconductor
Description: BD7F200HFN-EVK-001 EVALUATION BO
Description: BD7F200HFN-EVK-001 EVALUATION BO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BD7F200HFN-EVK-002 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD7F200
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 2A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F200
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Description: EVAL BOARD FOR BD7F200
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 24V
Current - Output: 2A
Frequency - Switching: 400kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: BD7F200
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 8673.65 грн |
BA12004DF-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
на замовлення 2418 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BA12003DF-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
LM339F-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 5684 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.52 грн |
10+ | 42.89 грн |
25+ | 38.64 грн |
100+ | 31.88 грн |
250+ | 29.79 грн |
500+ | 28.52 грн |
1000+ | 27.03 грн |
BD16950EFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4888 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 463.41 грн |
10+ | 341.92 грн |
25+ | 315.99 грн |
100+ | 269.78 грн |
250+ | 257.03 грн |
500+ | 249.34 грн |
1000+ | 239.03 грн |
BM2SCQ121T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 131 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1193.40 грн |
10+ | 801.52 грн |
34+ | 684.89 грн |
102+ | 569.80 грн |
BM2SCQ122T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1193.40 грн |
10+ | 801.52 грн |
34+ | 684.89 грн |
102+ | 569.80 грн |
BM2SCQ123T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
товару немає в наявності
В кошику
од. на суму грн.
BM2SCQ124T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1193.40 грн |
10+ | 801.52 грн |
34+ | 684.89 грн |
102+ | 569.80 грн |
BSS64AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
BSS63AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
BSS5130AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
BSS4130AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
BD71837AMWV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 265.03 грн |
2000+ | 249.81 грн |
BD71837AMWV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
на замовлення 2706 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 453.57 грн |
10+ | 336.07 грн |
25+ | 310.75 грн |
100+ | 265.58 грн |
250+ | 253.16 грн |
500+ | 245.67 грн |
BSS4130AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 248 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.83 грн |
13+ | 24.64 грн |
100+ | 15.71 грн |
BSS5130AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 196 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.81 грн |
13+ | 24.48 грн |
100+ | 14.71 грн |
BSS63AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
на замовлення 2307 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.25 грн |
18+ | 17.69 грн |
100+ | 8.96 грн |
500+ | 6.86 грн |
1000+ | 5.09 грн |
BSS64AT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
CSL0901DT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901MT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901PT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901UT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
В кошику
од. на суму грн.
CSL0901VT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
В кошику
од. на суму грн.
CSL0901WT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901YT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
В кошику
од. на суму грн.
CSL0901DT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
на замовлення 219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 48.39 грн |
12+ | 28.67 грн |
100+ | 16.51 грн |
CSL0901MT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901PT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
CSL0901UT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 1915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 48.39 грн |
12+ | 28.59 грн |
100+ | 16.44 грн |
1000+ | 12.07 грн |
CSL0901VT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.57 грн |
12+ | 28.28 грн |
100+ | 16.28 грн |
1000+ | 11.96 грн |
CSL0901WT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
на замовлення 1366 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
CSL0901YT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 7 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RGCL60TS60DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
на замовлення 34 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 395.34 грн |
10+ | 254.09 грн |
RGCL60TS60GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
на замовлення 362 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 356.79 грн |
10+ | 228.02 грн |
RGCL80TS60DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 600V 65A TO247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
Description: IGBT TRNCH FIELD 600V 65A TO247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
товару немає в наявності
В кошику
од. на суму грн.
RGCL80TS60GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 65A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
Description: IGBT TRENCH FS 600V 65A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 199.31 грн |
10+ | 124.16 грн |
RB085T-90NZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARR SCHOTT 90V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 87 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 118.11 грн |
50+ | 48.27 грн |
RGC80TSX8RGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 1800V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 80ns/565ns
Switching Energy: 1.85mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 468 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1800 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 535 W
Description: IGBT TRENCH FS 1800V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 80ns/565ns
Switching Energy: 1.85mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 468 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1800 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 535 W
на замовлення 743 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 792.32 грн |
30+ | 453.15 грн |
120+ | 385.17 грн |
510+ | 334.24 грн |
RGCL60TK60DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
на замовлення 34 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 230.48 грн |
30+ | 120.37 грн |