Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102219) > Сторінка 810 з 1704
| Фото | Назва | Виробник | Інформація |
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BD2267G-MGTR | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:1 5SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C Output Configuration: High Side Rds On (Typ): 120mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.12A Ratio - Input:Output: 1:1 Supplier Device Package: 5-SSOP Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1301 шт: термін постачання 21-31 дні (днів) |
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BD2268G-MGTR | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:1 5SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C Output Configuration: High Side Rds On (Typ): 110mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: 5-SSOP Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Grade: Automotive Qualification: AEC-Q100 |
на замовлення 22093 шт: термін постачання 21-31 дні (днів) |
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BD2269G-MGTR | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:1 5SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C Output Configuration: High Side Rds On (Typ): 110mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: 5-SSOP Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2895 шт: термін постачання 21-31 дні (днів) |
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BD42500G-CTR | Rohm Semiconductor |
Description: IC REG LINEAR POS ADJ 50MA 5SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 42V Current - Supply: 80µA Supplier Device Package: 5-SSOP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 7607 шт: термін постачання 21-31 дні (днів) |
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BD48E28G-MTR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 2.8V Supplier Device Package: 5-SSOP DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD48E40G-MTR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 4V Supplier Device Package: 5-SSOP Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 1211 шт: термін постачання 21-31 дні (днів) |
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BD48E43G-MTR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 4.3V Supplier Device Package: 5-SSOP DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2778 шт: термін постачання 21-31 дні (днів) |
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BD48E44G-MTR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5SSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR25H128F-2ACE2 | Rohm Semiconductor |
Description: MEMORY EEPROM |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR25H128FJ-2ACE2 | Rohm Semiconductor |
Description: MEMORY EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25H640FJ-2ACE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOPJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2121 шт: термін постачання 21-31 дні (днів) |
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BU28JA2VG-CGTR | Rohm Semiconductor |
Description: PWR MGMT LINEAR REGULATOR |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BM61S40RFV-CE2 | Rohm Semiconductor |
Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOPPackaging: Tape & Reel (TR) Package / Case: 10-SSOP (0.315", 8.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 2500Vrms Approval Agency: UL Supplier Device Package: 10-SSOP-BW Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 65ns, 65ns Pulse Width Distortion (Max): 60ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 16V ~ 20V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BM61M41RFV-CE2 | Rohm Semiconductor |
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOPPackaging: Tape & Reel (TR) Package / Case: 10-SSOP (0.315", 8.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 3750Vrms Approval Agency: UL Supplier Device Package: 10-SSOP-BW Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 65ns, 65ns Pulse Width Distortion (Max): 60ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 9V ~ 24V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BM60213FV-CE2 | Rohm Semiconductor |
Description: IC GATE DRVR HI/LOW SIDE 20SSOPPackaging: Tape & Reel (TR) Package / Case: 20-SSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 24V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: 20-SSOP-BW Rise / Fall Time (Typ): 50ns, 50ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 4.5A, 3.9A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BM61S40RFV-CE2 | Rohm Semiconductor |
Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOPPackaging: Cut Tape (CT) Package / Case: 10-SSOP (0.315", 8.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 2500Vrms Approval Agency: UL Supplier Device Package: 10-SSOP-BW Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 65ns, 65ns Pulse Width Distortion (Max): 60ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 16V ~ 20V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2843 шт: термін постачання 21-31 дні (днів) |
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BM61S41RFV-CE2 | Rohm Semiconductor |
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOPPackaging: Cut Tape (CT) Package / Case: 10-SSOP (0.315", 8.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 3750Vrms Approval Agency: UL Supplier Device Package: 10-SSOP-BW Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 65ns, 65ns Pulse Width Distortion (Max): 60ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 16V ~ 24V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 15364 шт: термін постачання 21-31 дні (днів) |
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BM61M41RFV-CE2 | Rohm Semiconductor |
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOPPackaging: Cut Tape (CT) Package / Case: 10-SSOP (0.315", 8.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 3750Vrms Approval Agency: UL Supplier Device Package: 10-SSOP-BW Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 65ns, 65ns Pulse Width Distortion (Max): 60ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 9V ~ 24V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1359 шт: термін постачання 21-31 дні (днів) |
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BM60213FV-CE2 | Rohm Semiconductor |
Description: IC GATE DRVR HI/LOW SIDE 20SSOPPackaging: Cut Tape (CT) Package / Case: 20-SSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 24V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: 20-SSOP-BW Rise / Fall Time (Typ): 50ns, 50ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 4.5A, 3.9A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2051 шт: термін постачання 21-31 дні (днів) |
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BM61S41RFV-CE2 | Rohm Semiconductor |
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOPPackaging: Tape & Reel (TR) Package / Case: 10-SSOP (0.315", 8.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 3750Vrms Approval Agency: UL Supplier Device Package: 10-SSOP-BW Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 65ns, 65ns Pulse Width Distortion (Max): 60ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 16V ~ 24V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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RGS50TSX2DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 1200V 50A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 182 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/140ns Switching Energy: 1.4mJ (on), 1.65mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 67 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 395 W |
на замовлення 335 шт: термін постачання 21-31 дні (днів) |
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RGS50TSX2HRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 1200V 50A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/140ns Switching Energy: 1.4mJ (on), 1.65mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 67 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 395 W |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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RGS80TSX2DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 1200V 80A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 198 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 49ns/199ns Switching Energy: 3mJ (on), 3.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 555 W |
на замовлення 1314 шт: термін постачання 21-31 дні (днів) |
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RGS00TS65HRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 88A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/115ns Switching Energy: 1.46mJ (on), 1.29mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 58 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 326 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGS80TSX2HRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 1200V 80A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 49ns/199ns Switching Energy: 3mJ (on), 3.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 104 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 555 W |
на замовлення 434 шт: термін постачання 21-31 дні (днів) |
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RGS80TS65HRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 73A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/112ns Switching Energy: 1.05mJ (on), 1.03mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 48 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 73 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 272 W |
на замовлення 163 шт: термін постачання 21-31 дні (днів) |
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RGS60TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 56A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/104ns Switching Energy: 660µJ (on), 810µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 36 nC Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 223 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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R6047ENZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 47A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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R6020KNZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
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R6047KNZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 47A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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R6030ENZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Power Dissipation (Max): 305W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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RHK003N06FRAT146 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 300MA SMT3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RHK005N03FRAT146 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 500MA SMT3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RHU002N06FRAT106 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 200MA UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: UMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RHK005N03FRAT146 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 500MA SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V |
на замовлення 382 шт: термін постачання 21-31 дні (днів) |
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RHK003N06FRAT146 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 300MA SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RHU002N06FRAT106 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 200MA UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: UMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5852 шт: термін постачання 21-31 дні (днів) |
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ML62Q1700-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 32KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 37 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ML62Q1710-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 32KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 41 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ML62Q1712-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 64KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 41 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ML62Q1702-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 64KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 37 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ML62Q1720-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 32KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ML62Q1724-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 128KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ML62Q1720-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 32KB FLASH 48TQFPPackaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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ML62Q1702-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 64KB FLASH 48TQFPPackaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 37 DigiKey Programmable: Not Verified |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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ML62Q1710-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 32KB FLASH 48TQFPPackaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 41 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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ML62Q1712-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 64KB FLASH 48TQFPPackaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 41 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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ML62Q1700-NNNTBZ0BX | Rohm Semiconductor |
Description: IC MCU 16BIT 32KB FLASH 48TQFPPackaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b; D/A 1x8b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 37 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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R6009END3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R6507ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 7A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6009END3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 9A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
на замовлення 5016 шт: термін постачання 21-31 дні (днів) |
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R6507ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 7A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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DTB113ECHZGT116 | Rohm Semiconductor |
Description: DTB113ECHZG IS THE HIGH RELIABILPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTD123YCHZGT116 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RU1L002SNTL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA UMT3FPackaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: UMT3F Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMD3NFHATR | Rohm Semiconductor |
Description: TRANS PREBIAS NPN+PNP 50V UMT6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: NPN + PNP Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: UMT6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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UMZ1NFHATR | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 150MA UMT6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz, 140MHz Supplier Device Package: UMT6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RU1L002SNTL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: UMT3F Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
на замовлення 8651 шт: термін постачання 21-31 дні (днів) |
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DTD123YCHZGT116 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4640 шт: термін постачання 21-31 дні (днів) |
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UMZ1NFHATR | Rohm Semiconductor |
Description: TRANS NPN/PNP 50V 150MA UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz, 140MHz Supplier Device Package: UMT6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5652 шт: термін постачання 21-31 дні (днів) |
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| BD2267G-MGTR |
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Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.12A
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.12A
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1301 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.68 грн |
| 10+ | 91.70 грн |
| 25+ | 77.08 грн |
| 100+ | 56.78 грн |
| 250+ | 49.14 грн |
| 500+ | 44.44 грн |
| 1000+ | 39.84 грн |
| BD2268G-MGTR |
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Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 22093 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.68 грн |
| 10+ | 91.70 грн |
| 25+ | 77.08 грн |
| 100+ | 56.78 грн |
| 250+ | 49.14 грн |
| 500+ | 44.44 грн |
| 1000+ | 39.84 грн |
| BD2269G-MGTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.68 грн |
| 10+ | 91.70 грн |
| 25+ | 77.08 грн |
| 100+ | 56.78 грн |
| 250+ | 49.14 грн |
| 500+ | 44.44 грн |
| 1000+ | 39.84 грн |
| BD42500G-CTR |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR POS ADJ 50MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 42V
Current - Supply: 80µA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 50MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 42V
Current - Supply: 80µA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7607 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.09 грн |
| 10+ | 71.16 грн |
| 25+ | 59.45 грн |
| 100+ | 43.41 грн |
| 250+ | 37.31 грн |
| 500+ | 33.56 грн |
| 1000+ | 29.92 грн |
| BD48E28G-MTR |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.8V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.8V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.78 грн |
| 10+ | 49.57 грн |
| 25+ | 46.58 грн |
| 100+ | 35.68 грн |
| 250+ | 33.14 грн |
| 500+ | 28.21 грн |
| 1000+ | 22.20 грн |
| BD48E40G-MTR |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4V
Supplier Device Package: 5-SSOP
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4V
Supplier Device Package: 5-SSOP
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1211 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.83 грн |
| 12+ | 29.03 грн |
| 25+ | 26.04 грн |
| 100+ | 21.30 грн |
| 250+ | 19.80 грн |
| 500+ | 18.90 грн |
| 1000+ | 17.86 грн |
| BD48E43G-MTR |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.3V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.3V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2778 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.73 грн |
| 10+ | 56.04 грн |
| 25+ | 46.58 грн |
| 100+ | 33.71 грн |
| 250+ | 28.80 грн |
| 500+ | 25.77 грн |
| 1000+ | 22.86 грн |
| BD48E44G-MTR |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BR25H128F-2ACE2 |
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Виробник: Rohm Semiconductor
Description: MEMORY EEPROM
Description: MEMORY EEPROM
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.97 грн |
| 10+ | 110.55 грн |
| 25+ | 107.59 грн |
| 50+ | 100.43 грн |
| 100+ | 89.78 грн |
| 250+ | 89.52 грн |
| 500+ | 86.72 грн |
| 1000+ | 83.04 грн |
| BR25H128FJ-2ACE2 |
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Виробник: Rohm Semiconductor
Description: MEMORY EEPROM
Description: MEMORY EEPROM
товару немає в наявності
В кошику
од. на суму грн.
| BR25H640FJ-2ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 64KBIT SPI 10MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2121 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.17 грн |
| 10+ | 96.07 грн |
| 25+ | 93.52 грн |
| 50+ | 87.34 грн |
| 100+ | 78.06 грн |
| 250+ | 77.83 грн |
| 500+ | 75.40 грн |
| 1000+ | 72.20 грн |
| BU28JA2VG-CGTR |
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Виробник: Rohm Semiconductor
Description: PWR MGMT LINEAR REGULATOR
Description: PWR MGMT LINEAR REGULATOR
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BM61S40RFV-CE2 |
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Виробник: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 20V
Grade: Automotive
Qualification: AEC-Q100
Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 20V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BM61M41RFV-CE2 |
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Виробник: Rohm Semiconductor
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 9V ~ 24V
Grade: Automotive
Qualification: AEC-Q100
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 9V ~ 24V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BM60213FV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 24V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4.5A, 3.9A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HI/LOW SIDE 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 24V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4.5A, 3.9A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 182.14 грн |
| BM61S40RFV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 20V
Grade: Automotive
Qualification: AEC-Q100
Description: DGTL ISO 2.5KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 20V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2843 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 485.39 грн |
| 10+ | 307.46 грн |
| 25+ | 265.99 грн |
| 100+ | 205.50 грн |
| 250+ | 183.85 грн |
| 500+ | 170.53 грн |
| BM61S41RFV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 24V
Grade: Automotive
Qualification: AEC-Q100
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 24V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15364 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 338.43 грн |
| 10+ | 247.37 грн |
| 25+ | 227.79 грн |
| 100+ | 193.57 грн |
| 250+ | 183.94 грн |
| 500+ | 178.14 грн |
| BM61M41RFV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 9V ~ 24V
Grade: Automotive
Qualification: AEC-Q100
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Cut Tape (CT)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 9V ~ 24V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 467.76 грн |
| 10+ | 295.65 грн |
| 25+ | 255.48 грн |
| 100+ | 197.08 грн |
| 250+ | 176.12 грн |
| 500+ | 163.23 грн |
| BM60213FV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 24V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4.5A, 3.9A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR HI/LOW SIDE 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 24V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4.5A, 3.9A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2051 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 475.32 грн |
| 10+ | 309.64 грн |
| 25+ | 271.29 грн |
| 100+ | 214.26 грн |
| 250+ | 194.67 грн |
| 500+ | 182.74 грн |
| 1000+ | 170.00 грн |
| BM61S41RFV-CE2 |
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Виробник: Rohm Semiconductor
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 24V
Grade: Automotive
Qualification: AEC-Q100
Description: DGT ISO 3.75KV 1CH GT DVR 10SSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-SSOP (0.315", 8.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3750Vrms
Approval Agency: UL
Supplier Device Package: 10-SSOP-BW
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 65ns, 65ns
Pulse Width Distortion (Max): 60ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 16V ~ 24V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 171.39 грн |
| RGS50TSX2DHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 1200V 50A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 182 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/140ns
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 395 W
Description: IGBT TRENCH FS 1200V 50A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 182 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/140ns
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 395 W
на замовлення 335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 669.30 грн |
| 30+ | 378.76 грн |
| 120+ | 320.48 грн |
| RGS50TSX2HRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 50A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/140ns
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 395 W
Description: IGBT TRENCH FLD 1200V 50A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/140ns
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 395 W
на замовлення 446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 756.64 грн |
| 30+ | 429.97 грн |
| 120+ | 364.40 грн |
| RGS80TSX2DHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 1200V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
Description: IGBT TRENCH FS 1200V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
на замовлення 1314 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1009.41 грн |
| 30+ | 592.06 грн |
| 120+ | 508.81 грн |
| 510+ | 465.35 грн |
| RGS00TS65HRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
товару немає в наявності
В кошику
од. на суму грн.
| RGS80TSX2HRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
Description: IGBT TRENCH FLD 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
на замовлення 434 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 955.67 грн |
| 30+ | 552.35 грн |
| 120+ | 471.71 грн |
| RGS80TS65HRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
на замовлення 163 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 483.71 грн |
| 30+ | 372.15 грн |
| 120+ | 332.97 грн |
| RGS60TS65DHRC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 56A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/104ns
Switching Energy: 660µJ (on), 810µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 223 W
Description: IGBT TRENCH FS 650V 56A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/104ns
Switching Energy: 660µJ (on), 810µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 223 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 593.72 грн |
| 30+ | 333.23 грн |
| 120+ | 280.73 грн |
| R6047ENZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1222.72 грн |
| 10+ | 1081.77 грн |
| R6020KNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 410 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 717.17 грн |
| 30+ | 404.80 грн |
| 120+ | 342.00 грн |
| R6047KNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1192.49 грн |
| 10+ | 1055.40 грн |
| R6030ENZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 831.38 грн |
| RHK003N06FRAT146 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.83 грн |
| RHK005N03FRAT146 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
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В кошику
од. на суму грн.
| RHU002N06FRAT106 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.66 грн |
| RHK005N03FRAT146 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
на замовлення 382 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.63 грн |
| 12+ | 29.03 грн |
| 100+ | 17.42 грн |
| RHK003N06FRAT146 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 300MA SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.67 грн |
| 13+ | 25.80 грн |
| 100+ | 16.44 грн |
| 500+ | 11.65 грн |
| 1000+ | 10.43 грн |
| RHU002N06FRAT106 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5852 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.07 грн |
| 18+ | 18.11 грн |
| 100+ | 11.46 грн |
| 500+ | 8.03 грн |
| 1000+ | 7.14 грн |
| ML62Q1700-NNNTBZ0BX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| ML62Q1710-NNNTBZ0BX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| ML62Q1712-NNNTBZ0BX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| ML62Q1702-NNNTBZ0BX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| ML62Q1720-NNNTBZ0BX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| ML62Q1724-NNNTBZ0BX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 128KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| ML62Q1720-NNNTBZ0BX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 402.25 грн |
| 10+ | 321.69 грн |
| 25+ | 298.82 грн |
| 100+ | 253.21 грн |
| ML62Q1702-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 90 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 392.18 грн |
| 10+ | 313.85 грн |
| 25+ | 291.54 грн |
| ML62Q1710-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 387.98 грн |
| 10+ | 310.05 грн |
| 25+ | 287.95 грн |
| 100+ | 243.88 грн |
| ML62Q1712-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 412.33 грн |
| 10+ | 329.70 грн |
| 25+ | 306.23 грн |
| 100+ | 259.54 грн |
| ML62Q1700-NNNTBZ0BX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 32KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 367.82 грн |
| 10+ | 294.28 грн |
| 25+ | 273.20 грн |
| 100+ | 231.24 грн |
| R6009END3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: MOSFET N-CH 600V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 86.38 грн |
| R6507ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| R6009END3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: MOSFET N-CH 600V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
на замовлення 5016 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.47 грн |
| 10+ | 153.24 грн |
| 100+ | 121.96 грн |
| 500+ | 96.84 грн |
| 1000+ | 82.17 грн |
| R6507ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: MOSFET N-CH 650V 7A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 331.71 грн |
| 10+ | 210.09 грн |
| 100+ | 147.94 грн |
| 500+ | 113.94 грн |
| DTB113ECHZGT116 |
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Виробник: Rohm Semiconductor
Description: DTB113ECHZG IS THE HIGH RELIABIL
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: DTB113ECHZG IS THE HIGH RELIABIL
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| DTD123YCHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.67 грн |
| RU1L002SNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Description: MOSFET N-CH 60V 250MA UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.53 грн |
| UMD3NFHATR |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN+PNP 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN + PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN+PNP 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN + PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.62 грн |
| 6000+ | 6.67 грн |
| UMZ1NFHATR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 150MA UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP 50V 150MA UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.62 грн |
| RU1L002SNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Description: MOSFET N-CH 60V 250MA UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
на замовлення 8651 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.51 грн |
| 22+ | 15.12 грн |
| 100+ | 9.68 грн |
| 500+ | 5.55 грн |
| 1000+ | 4.91 грн |
| DTD123YCHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4640 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.71 грн |
| 18+ | 18.36 грн |
| 100+ | 8.96 грн |
| 500+ | 7.01 грн |
| 1000+ | 4.87 грн |
| UMZ1NFHATR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 150MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP 50V 150MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5652 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.43 грн |
| 16+ | 20.54 грн |
| 100+ | 13.00 грн |
| 500+ | 9.14 грн |
| 1000+ | 8.15 грн |























