Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102954) > Сторінка 814 з 1716
Фото | Назва | Виробник | Інформація |
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BA12004DF-ZE2 | Rohm Semiconductor |
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на замовлення 2418 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BA12003DF-ZE2 | Rohm Semiconductor |
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на замовлення 2231 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LM339F-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 14-SOP Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 4.5mV @ 32V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 5739 шт: термін постачання 21-31 дні (днів) |
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BD16950EFV-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 5.5V Input Type: Non-Inverting Supplier Device Package: 24-HTSSOP-B Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4888 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ121T-LBZ | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 131 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ122T-LBZ | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 220 шт: термін постачання 21-31 дні (днів) |
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BM2SCQ123T-LBZ | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BM2SCQ124T-LBZ | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Frequency - Switching: 30kHz, 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-220-6M Fault Protection: Over Current, Over Voltage Control Features: Soft Start Power (Watts): 1.5 W |
на замовлення 223 шт: термін постачання 21-31 дні (днів) |
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BSS64AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 140MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS63AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS5130AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS4130AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD71837AMWV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Current - Supply: 197µA Supplier Device Package: UQFN68CV8080 Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BD71837AMWV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Current - Supply: 197µA Supplier Device Package: UQFN68CV8080 Part Status: Active |
на замовлення 3067 шт: термін постачання 21-31 дні (днів) |
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BSS4130AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 248 шт: термін постачання 21-31 дні (днів) |
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BSS5130AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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BSS63AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
на замовлення 2307 шт: термін постачання 21-31 дні (днів) |
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BSS64AT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 140MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901DT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
CSL0901MT | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901PT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901UT | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 280mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901VT | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 180mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 630nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
CSL0901WT | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901YT | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 320mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 590nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901DT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
на замовлення 219 шт: термін постачання 21-31 дні (днів) |
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CSL0901MT | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901PT | Rohm Semiconductor | Description: HIGH BRIGHTNESS LENS TYPE LED; C |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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CSL0901UT | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 280mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 1915 шт: термін постачання 21-31 дні (днів) |
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CSL0901VT | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 180mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 630nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 1067 шт: термін постачання 21-31 дні (днів) |
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CSL0901WT | Rohm Semiconductor |
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на замовлення 1366 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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CSL0901YT | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 320mcd Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 1.34mm Wavelength - Dominant: 590nm Supplier Device Package: 0603 Lens Transparency: Clear Part Status: Active Lens Style: Round with Domed Top Lens Size: 1.14mm Dia |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RGCL60TS60DGC11 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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RGCL60TS60GC11 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
на замовлення 362 шт: термін постачання 21-31 дні (днів) |
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RGCL80TS60DGC11 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 148 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RGCL80TS60GC11 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 148 W |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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RB085T-90NZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 87 шт: термін постачання 21-31 дні (днів) |
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RGC80TSX8RGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 80ns/565ns Switching Energy: 1.85mJ (on), 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 468 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1800 V Current - Collector Pulsed (Icm): 120 A Power - Max: 535 W |
на замовлення 743 шт: термін постачання 21-31 дні (днів) |
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RGCL60TK60DGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 54 W |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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RGCL60TK60GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 54 W |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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RGCL80TK60GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 57 W |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
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RGT16NS65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
на замовлення 659 шт: термін постачання 21-31 дні (днів) |
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RGT16TM65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 9 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 22 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGT30NS65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 133 W |
на замовлення 2896 шт: термін постачання 21-31 дні (днів) |
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RGT30TM65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 32 W |
на замовлення 768 шт: термін постачання 21-31 дні (днів) |
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RGT40NS65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 161 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGT40TM65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 39 W |
на замовлення 1875 шт: термін постачання 21-31 дні (днів) |
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RGT50NS65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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RGT50TM65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 47 W |
на замовлення 864 шт: термін постачання 21-31 дні (днів) |
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RGT8NS65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 65 W |
на замовлення 962 шт: термін постачання 21-31 дні (днів) |
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RGT8TM65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 16 W |
на замовлення 711 шт: термін постачання 21-31 дні (днів) |
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RGTH00TK65GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 72 W |
на замовлення 403 шт: термін постачання 21-31 дні (днів) |
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RGTH60TK65DGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 61 W |
на замовлення 403 шт: термін постачання 21-31 дні (днів) |
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RGTH60TK65GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 61 W |
на замовлення 307 шт: термін постачання 21-31 дні (днів) |
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RGTH80TK65DGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/120ns Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 79 nC Part Status: Active Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 66 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RGTVX6TS65DGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 109 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/201ns Switching Energy: 2.65mJ (on), 1.8mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 171 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 144 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 320 A Power - Max: 404 W |
на замовлення 387 шт: термін постачання 21-31 дні (днів) |
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BZX84C3V9LT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5.12% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SSD3 Part Status: Not For New Designs Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C3V9LT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Tolerance: ±5.12% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SSD3 Part Status: Not For New Designs Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C5V6LT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±7.14% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SSD3 Part Status: Not For New Designs Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C5V6LT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Tolerance: ±7.14% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SSD3 Part Status: Not For New Designs Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BA12004DF-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
на замовлення 2418 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BA12003DF-ZE2 |
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Виробник: Rohm Semiconductor
Description: IC DARLINGTON ARRAY 7/0 16SOP
Description: IC DARLINGTON ARRAY 7/0 16SOP
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
LM339F-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 32V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 5739 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 62.13 грн |
10+ | 43.05 грн |
25+ | 38.82 грн |
100+ | 32.02 грн |
250+ | 29.91 грн |
500+ | 28.65 грн |
1000+ | 27.15 грн |
BD16950EFV-CE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDG 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 24-HTSSOP-B
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4888 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 455.90 грн |
10+ | 336.37 грн |
25+ | 310.87 грн |
100+ | 265.41 грн |
250+ | 252.86 грн |
500+ | 245.30 грн |
1000+ | 235.15 грн |
BM2SCQ121T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 131 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1174.03 грн |
10+ | 788.51 грн |
34+ | 673.78 грн |
102+ | 560.56 грн |
BM2SCQ122T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1174.03 грн |
10+ | 788.51 грн |
34+ | 673.78 грн |
102+ | 560.56 грн |
BM2SCQ123T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
товару немає в наявності
В кошику
од. на суму грн.
BM2SCQ124T-LBZ |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
Description: IC OFFLINE SWITCH TO220-6M
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 30kHz, 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-220-6M
Fault Protection: Over Current, Over Voltage
Control Features: Soft Start
Power (Watts): 1.5 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1174.03 грн |
10+ | 788.51 грн |
34+ | 673.78 грн |
102+ | 560.56 грн |
BSS64AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS NPN 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
BSS63AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
BSS5130AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
BSS4130AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
BD71837AMWV-E2 |
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Виробник: Rohm Semiconductor
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 268.96 грн |
2000+ | 253.51 грн |
BD71837AMWV-E2 |
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Виробник: Rohm Semiconductor
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
Description: SYSTEM PMIC FOR I.MX 8M FAMILY.
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Current - Supply: 197µA
Supplier Device Package: UQFN68CV8080
Part Status: Active
на замовлення 3067 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 460.74 грн |
10+ | 341.03 грн |
25+ | 315.37 грн |
100+ | 269.52 грн |
250+ | 256.91 грн |
500+ | 249.31 грн |
BSS4130AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 248 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.15 грн |
13+ | 24.24 грн |
100+ | 15.45 грн |
BSS5130AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 196 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.28 грн |
13+ | 24.09 грн |
100+ | 14.48 грн |
BSS63AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
на замовлення 2307 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.82 грн |
18+ | 17.41 грн |
100+ | 8.81 грн |
500+ | 6.75 грн |
1000+ | 5.00 грн |
BSS64AT116 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
CSL0901DT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901MT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901PT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901UT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
В кошику
од. на суму грн.
CSL0901VT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
В кошику
од. на суму грн.
CSL0901WT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901YT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
товару немає в наявності
В кошику
од. на суму грн.
CSL0901DT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
на замовлення 219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.61 грн |
12+ | 28.21 грн |
100+ | 16.24 грн |
CSL0901MT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
товару немає в наявності
В кошику
од. на суму грн.
CSL0901PT |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
CSL0901UT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 280mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 1915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.61 грн |
12+ | 28.13 грн |
100+ | 16.17 грн |
1000+ | 11.88 грн |
CSL0901VT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 630nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 46.80 грн |
12+ | 27.82 грн |
100+ | 16.01 грн |
1000+ | 11.76 грн |
CSL0901WT |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Description: HIGH BRIGHTNESS LENS TYPE LED; C
на замовлення 1366 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
CSL0901YT |
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Виробник: Rohm Semiconductor
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Description: HIGH BRIGHTNESS LENS TYPE LED; C
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 320mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
на замовлення 7 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RGCL60TS60DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
на замовлення 159 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 401.03 грн |
10+ | 257.89 грн |
RGCL60TS60GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
на замовлення 362 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 361.49 грн |
10+ | 231.39 грн |
RGCL80TS60DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 600V 65A TO247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
Description: IGBT TRNCH FIELD 600V 65A TO247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
товару немає в наявності
В кошику
од. на суму грн.
RGCL80TS60GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 65A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
Description: IGBT TRENCH FS 600V 65A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 148 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 202.53 грн |
10+ | 125.95 грн |
RB085T-90NZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARR SCHOTT 90V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 87 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 116.19 грн |
50+ | 47.49 грн |
RGC80TSX8RGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 1800V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 80ns/565ns
Switching Energy: 1.85mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 468 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1800 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 535 W
Description: IGBT TRENCH FS 1800V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 80ns/565ns
Switching Energy: 1.85mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 468 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1800 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 535 W
на замовлення 743 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 779.46 грн |
30+ | 445.80 грн |
120+ | 378.92 грн |
510+ | 328.82 грн |
RGCL60TK60DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
на замовлення 34 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 234.00 грн |
30+ | 122.15 грн |
RGCL60TK60GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
Description: IGBT TRENCH FS 600V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 54 W
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 214.63 грн |
30+ | 111.27 грн |
RGCL80TK60GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 600V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 57 W
Description: IGBT TRNCH FIELD 600V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 57 W
на замовлення 410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 380.05 грн |
10+ | 307.31 грн |
RGT16NS65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 16A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FIELD 650V 16A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
на замовлення 659 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.17 грн |
50+ | 63.30 грн |
100+ | 56.57 грн |
500+ | 41.99 грн |
RGT16TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 9A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 22 W
Description: IGBT TRENCH FS 650V 9A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 22 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 238.84 грн |
10+ | 149.96 грн |
100+ | 104.33 грн |
500+ | 79.62 грн |
1000+ | 73.74 грн |
RGT30NS65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 30A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 133 W
Description: IGBT TRENCH FIELD 650V 30A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 133 W
на замовлення 2896 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 275.96 грн |
50+ | 135.14 грн |
100+ | 122.43 грн |
500+ | 93.96 грн |
1000+ | 87.22 грн |
2000+ | 83.79 грн |
RGT30TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 14A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 32 W
Description: IGBT TRENCH FS 650V 14A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 32 W
на замовлення 768 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 142.82 грн |
50+ | 65.97 грн |
100+ | 59.05 грн |
500+ | 44.01 грн |
RGT40NS65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 40A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Description: IGBT TRENCH FIELD 650V 40A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 213.83 грн |
10+ | 135.43 грн |
100+ | 102.01 грн |
RGT40TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 17A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 39 W
Description: IGBT TRENCH FS 650V 17A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 39 W
на замовлення 1875 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 300.17 грн |
50+ | 147.77 грн |
100+ | 134.13 грн |
500+ | 103.43 грн |
1000+ | 96.22 грн |
RGT50NS65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 361.49 грн |
50+ | 180.30 грн |
100+ | 164.08 грн |
500+ | 127.31 грн |
RGT50TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 21A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 47 W
Description: IGBT TRENCH FS 650V 21A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 47 W
на замовлення 864 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 322.76 грн |
50+ | 160.10 грн |
100+ | 145.53 грн |
500+ | 112.58 грн |
RGT8NS65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Description: IGBT TRENCH FS 650V 8A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
на замовлення 962 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 119.42 грн |
50+ | 54.13 грн |
100+ | 48.23 грн |
500+ | 35.54 грн |
RGT8TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 5A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 16 W
Description: IGBT TRENCH FS 650V 5A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 16 W
на замовлення 711 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.70 грн |
50+ | 48.02 грн |
100+ | 42.75 грн |
500+ | 31.45 грн |
RGTH00TK65GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
на замовлення 403 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 292.10 грн |
30+ | 154.24 грн |
120+ | 126.10 грн |
RGTH60TK65DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 61 W
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 61 W
на замовлення 403 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 286.45 грн |
30+ | 150.71 грн |
120+ | 123.14 грн |
RGTH60TK65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 28A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 61 W
Description: IGBT TRNCH FIELD 650V 28A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 61 W
на замовлення 307 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 415.55 грн |
30+ | 317.05 грн |
120+ | 271.75 грн |
RGTH80TK65DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 384.89 грн |
30+ | 220.10 грн |
RGTVX6TS65DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 144A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 109 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/201ns
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 171 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 144 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 404 W
Description: IGBT TRENCH FLD 650V 144A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 109 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/201ns
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 171 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 144 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 404 W
на замовлення 387 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 643.90 грн |
10+ | 443.75 грн |
BZX84C3V9LT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±5.12%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: DIODE ZENER 3.9V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±5.12%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
BZX84C3V9LT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±5.12%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: DIODE ZENER 3.9V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±5.12%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
BZX84C5V6LT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.56 грн |
BZX84C5V6LT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.52 грн |