Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105895) > Сторінка 806 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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R6024ENZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 24A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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R6024ENZM12C8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 24A TO3Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6024ENZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 24A TO247Grade: Automotive Qualification: AEC-Q101 Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: TO-247 Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 587 шт: термін постачання 21-31 дні (днів) |
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R6024KNZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 24A TO247Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole |
на замовлення 267 шт: термін постачання 21-31 дні (днів) |
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MNR18ERAPJ513 | Rohm Semiconductor | Description: RES ARRAY 8 RES 51K OHM 1606 |
на замовлення 2864 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BD9E303EFJ-LBH2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 3A 8HTSOP-JPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 36V Topology: Buck Supplier Device Package: 8-HTSOP-J Synchronous Rectifier: Yes Voltage - Output (Max): 28.8V Voltage - Input (Min): 7V Voltage - Output (Min/Fixed): 1V Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SCR553RTL | Rohm Semiconductor |
Description: TRANS NPN 50V 2A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz Supplier Device Package: TSMT3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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2SCR553RTL | Rohm Semiconductor |
Description: TRANS NPN 50V 2A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz Supplier Device Package: TSMT3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 1769 шт: термін постачання 21-31 дні (днів) |
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2SCR553PFRAT100 | Rohm Semiconductor |
Description: TRANS NPN 50V 2A MPT3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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2SCR553PFRAT100 | Rohm Semiconductor |
Description: TRANS NPN 50V 2A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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2SAR512P5T100 | Rohm Semiconductor |
Description: TRANS PNP 30V 2A MPT3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 430MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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2SAR512P5T100 | Rohm Semiconductor |
Description: TRANS PNP 30V 2A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 430MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
на замовлення 2630 шт: термін постачання 21-31 дні (днів) |
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2SAR512PFRAT100 | Rohm Semiconductor |
Description: PNP DRIVER TRANSISTOR (CORRESPON |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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2SAR512PFRAT100 | Rohm Semiconductor |
Description: PNP DRIVER TRANSISTOR (CORRESPON |
на замовлення 775 шт: термін постачання 21-31 дні (днів) |
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BD733L2FP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 200MA TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive Part Status: Active PSRR: 63dB (120Hz) Voltage Dropout (Max): 1V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 15 µA Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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BD733L2FP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 200MA TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive Part Status: Active PSRR: 63dB (120Hz) Voltage Dropout (Max): 1V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 15 µA Qualification: AEC-Q100 |
на замовлення 920 шт: термін постачання 21-31 дні (днів) |
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BD733L5FP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 500MA TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive PSRR: 63dB (120Hz) Voltage Dropout (Max): 0.8V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 15 µA Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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BD733L5FP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 500MA TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive PSRR: 63dB (120Hz) Voltage Dropout (Max): 0.8V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 15 µA Qualification: AEC-Q100 |
на замовлення 806 шт: термін постачання 21-31 дні (днів) |
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BD733L2FP3-EVK-301 | Rohm Semiconductor |
Description: EVAL BOARD FOR BD733Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 4.37V ~ 45V Current - Output: 200mA Contents: Board(s) Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: BD733 Supplied Contents: Board(s) Channels per IC: 1 - Single Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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RB218NS200TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 200V 20A LPTSCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPTS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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RB218NS200TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 200V 20A LPTSCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPTS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 613 шт: термін постачання 21-31 дні (днів) |
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RB521G-40FHT2R | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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RB521G-40FHT2R | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE AEC-Q101 |
на замовлення 7748 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SH8KA4TB | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A 8SOPSupplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9A Drain to Source Voltage (Vdss): 30V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 41250 шт: термін постачання 21-31 дні (днів) |
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SH8KA2GZETB | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 8A 8SOP Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 2.8W Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2907 шт: термін постачання 21-31 дні (днів) |
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SH8KA7GZETB | Rohm Semiconductor |
Description: SH8KA7 IS LOW ON-RESISTANCE AND |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SH8KA7GZETB | Rohm Semiconductor |
Description: SH8KA7 IS LOW ON-RESISTANCE AND |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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QH8KA2TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 4.5A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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QH8KA2TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 4.5A TSMT8Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) |
на замовлення 2177 шт: термін постачання 21-31 дні (днів) |
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SH8KA4TB1 | Rohm Semiconductor |
Description: MOSFET2 N-CH SOP8GSupplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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2SK2463T100 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 2A MPT3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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2SK2463T100 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 2A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
на замовлення 886 шт: термін постачання 21-31 дні (днів) |
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BU7233YF-CGE2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 CMOS 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: CMOS Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Supplier Device Package: 8-SOP Propagation Delay (Max): 1.8µs (Typ) Current - Quiescent (Max): 25µA Voltage - Input Offset (Max): 14mV @ 3V Current - Input Bias (Max): 300pA @ 3V Current - Output (Typ): 7mA @ 3V CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BU7233YF-CGE2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 CMOS 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: CMOS Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Supplier Device Package: 8-SOP Propagation Delay (Max): 1.8µs (Typ) Current - Quiescent (Max): 25µA Voltage - Input Offset (Max): 14mV @ 3V Current - Input Bias (Max): 300pA @ 3V Current - Output (Typ): 7mA @ 3V CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 5855 шт: термін постачання 21-31 дні (днів) |
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BAS21VMFHTE-17 | Rohm Semiconductor |
Description: DIODE STANDARD 200V 200MA UMD2Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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BAS21VMFHTE-17 | Rohm Semiconductor |
Description: DIODE STANDARD 200V 200MA UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 36474 шт: термін постачання 21-31 дні (днів) |
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VS18VUA1LAMTFTR | Rohm Semiconductor |
Description: TVS DIODE 18VWM 29.2VC PMDTMQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 29.2V Voltage - Breakdown (Min): 20V Unidirectional Channels: 1 Supplier Device Package: PMDTM Voltage - Reverse Standoff (Typ): 18V Current - Peak Pulse (10/1000µs): 20.5A Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS18VUA1LAMTFTR | Rohm Semiconductor |
Description: TVS DIODE 18VWM 29.2VC PMDTMPower - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 29.2V Voltage - Breakdown (Min): 20V Unidirectional Channels: 1 Supplier Device Package: PMDTM Voltage - Reverse Standoff (Typ): 18V Current - Peak Pulse (10/1000µs): 20.5A Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KDZVTFTR18B | Rohm Semiconductor |
Description: DIODE ZENER 19.15V 1W PMDUSupplier Device Package: PMDU Voltage - Zener (Nom) (Vz): 19.15 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Tolerance: ±6.39% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 13 V Power - Max: 1 W |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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KDZVTFTR18B | Rohm Semiconductor |
Description: DIODE ZENER 19.15V 1W PMDUCurrent - Reverse Leakage @ Vr: 10 µA @ 13 V Power - Max: 1 W Supplier Device Package: PMDU Voltage - Zener (Nom) (Vz): 19.15 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Tolerance: ±6.39% Packaging: Cut Tape (CT) |
на замовлення 19809 шт: термін постачання 21-31 дні (днів) |
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DTB143ECHZGT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.5A SST3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SST3 DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTB143ECHZGT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.5A SST3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 200 mW Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SST3 DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Frequency - Transition: 200 MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTB143ECT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A SST3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SST3 DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTB143ECT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A SST3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SST3 DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 6355 шт: термін постачання 21-31 дні (днів) |
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DTB143EKFRAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A SMT3 Qualification: AEC-Q101 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DTB143EKFRAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A SMT3 Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| KX128-1091 | Rohm Semiconductor |
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA Packaging: Tape & Reel (TR) Package / Case: 12-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Axis: X, Y, Z Acceleration Range: ±2g, 4g, 8g Supplier Device Package: 12-LGA (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCX17HZGT116 | Rohm Semiconductor |
Description: TRANS PNP 45V 0.5A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BCX17HZGT116 | Rohm Semiconductor |
Description: TRANS PNP 45V 0.5A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTC123EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3FResistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: EMT3F (SOT-416FL) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Current - Collector Cutoff (Max): 500nA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DTC123EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3FPackaging: Cut Tape (CT) Resistors Included: R1 and R2 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: EMT3F (SOT-416FL) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDZT40RB5.1 | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 100MW SMD0402Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDZT40RB5.1 | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 100MW SMD0402Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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FDZT40RB7.5 | Rohm Semiconductor |
Description: DIODE ZENER 7.5V 100MW SMD0402Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDZT40RB6.2 | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 100MW SMD0402Current - Reverse Leakage @ Vr: 1 µA @ 3 V Power - Max: 100 mW Supplier Device Package: SMD0402 Voltage - Zener (Nom) (Vz): 6.2 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 01005 (0402 Metric) Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDZT40RB6.2 | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 100MW SMD0402Current - Reverse Leakage @ Vr: 1 µA @ 3 V Power - Max: 100 mW Supplier Device Package: SMD0402 Voltage - Zener (Nom) (Vz): 6.2 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 01005 (0402 Metric) Tolerance: ±5% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDZT40RB5.6 | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 100MW SMD0402Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Power - Max: 100 mW Supplier Device Package: SMD0402 Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 01005 (0402 Metric) Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 40000 шт В кошику од. на суму грн. | ||||||||||||||||
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ESR18EZPJ104 | Rohm Semiconductor |
Description: RES 100K OHM 5% 1/2W 1206Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 100 kOhms |
на замовлення 3909 шт: термін постачання 21-31 дні (днів) |
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RRU1LAM4STFTR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1A PMDTPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDT Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RRU1LAM4STFTR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1A PMDTPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDT Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 6002 шт: термін постачання 21-31 дні (днів) |
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| R6024ENZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 24A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 507.47 грн |
| 30+ | 280.46 грн |
| 60+ | 255.63 грн |
| 120+ | 220.27 грн |
| R6024ENZM12C8 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO3
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 24A TO3
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| R6024ENZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO247
Grade: Automotive
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: TO-247
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 24A TO247
Grade: Automotive
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: TO-247
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 587 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 482.10 грн |
| 30+ | 266.46 грн |
| 120+ | 233.96 грн |
| R6024KNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO247
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 600V 24A TO247
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
на замовлення 267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 520.16 грн |
| 30+ | 289.21 грн |
| 120+ | 258.75 грн |
| MNR18ERAPJ513 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 8 RES 51K OHM 1606
Description: RES ARRAY 8 RES 51K OHM 1606
на замовлення 2864 шт:
термін постачання 21-31 дні (днів)
| BD9E303EFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
Part Status: Active
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 195.20 грн |
| 500+ | 182.02 грн |
| 750+ | 179.05 грн |
| 1250+ | 164.94 грн |
| 1750+ | 163.13 грн |
| 2500+ | 161.39 грн |
| 2SCR553RTL |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 2SCR553RTL |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1769 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.92 грн |
| 10+ | 32.07 грн |
| 100+ | 20.65 грн |
| 500+ | 14.72 грн |
| 1000+ | 13.23 грн |
| 2SCR553PFRAT100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 12.94 грн |
| 2SCR553PFRAT100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.03 грн |
| 10+ | 32.53 грн |
| 100+ | 22.14 грн |
| 500+ | 15.59 грн |
| 2SAR512P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS PNP 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 12.53 грн |
| 2000+ | 11.00 грн |
| 2SAR512P5T100 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS PNP 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 430MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 2630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.51 грн |
| 12+ | 26.57 грн |
| 100+ | 19.87 грн |
| 500+ | 14.65 грн |
| 2SAR512PFRAT100 |
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Виробник: Rohm Semiconductor
Description: PNP DRIVER TRANSISTOR (CORRESPON
Description: PNP DRIVER TRANSISTOR (CORRESPON
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 2SAR512PFRAT100 |
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Виробник: Rohm Semiconductor
Description: PNP DRIVER TRANSISTOR (CORRESPON
Description: PNP DRIVER TRANSISTOR (CORRESPON
на замовлення 775 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.30 грн |
| 12+ | 27.72 грн |
| 100+ | 20.70 грн |
| 500+ | 15.27 грн |
| BD733L2FP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 200MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BD733L2FP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 200MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 1V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
на замовлення 920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.42 грн |
| 10+ | 93.92 грн |
| 25+ | 85.52 грн |
| 100+ | 71.54 грн |
| 250+ | 67.38 грн |
| 500+ | 64.87 грн |
| BD733L5FP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BD733L5FP-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 63dB (120Hz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
на замовлення 806 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.76 грн |
| 10+ | 115.30 грн |
| 25+ | 105.19 грн |
| 100+ | 88.31 грн |
| 250+ | 83.35 грн |
| 500+ | 80.91 грн |
| BD733L2FP3-EVK-301 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD733
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Description: EVAL BOARD FOR BD733
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1382.07 грн |
| RB218NS200TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 200V 20A LPTS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 200V 20A LPTS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RB218NS200TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 200V 20A LPTS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 200V 20A LPTS
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 613 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 211.71 грн |
| 10+ | 169.66 грн |
| 100+ | 135.07 грн |
| 500+ | 107.26 грн |
| RB521G-40FHT2R |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE AEC-Q101
Description: SCHOTTKY BARRIER DIODE AEC-Q101
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RB521G-40FHT2R |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE AEC-Q101
Description: SCHOTTKY BARRIER DIODE AEC-Q101
на замовлення 7748 шт:
термін постачання 21-31 дні (днів)
| SH8KA4TB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 9A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 41250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.09 грн |
| 10+ | 49.71 грн |
| 100+ | 35.86 грн |
| 500+ | 28.74 грн |
| 1000+ | 27.84 грн |
| SH8KA2GZETB |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.8W
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 8A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.8W
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2907 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.87 грн |
| 10+ | 81.62 грн |
| 100+ | 63.46 грн |
| 500+ | 50.48 грн |
| 1000+ | 41.12 грн |
| SH8KA7GZETB |
![]() |
Виробник: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
Description: SH8KA7 IS LOW ON-RESISTANCE AND
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| SH8KA7GZETB |
![]() |
Виробник: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
Description: SH8KA7 IS LOW ON-RESISTANCE AND
товару немає в наявності
В кошику
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| QH8KA2TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| QH8KA2TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
на замовлення 2177 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.84 грн |
| 10+ | 51.08 грн |
| 50+ | 37.83 грн |
| 100+ | 31.47 грн |
| 500+ | 24.39 грн |
| SH8KA4TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET2 N-CH SOP8G
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET2 N-CH SOP8G
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SK2463T100 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 2SK2463T100 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
на замовлення 886 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.05 грн |
| 10+ | 50.62 грн |
| 100+ | 33.33 грн |
| 500+ | 24.30 грн |
| BU7233YF-CGE2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 49.10 грн |
| BU7233YF-CGE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 5855 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.12 грн |
| 10+ | 69.79 грн |
| 25+ | 63.31 грн |
| 100+ | 52.75 грн |
| 250+ | 49.56 грн |
| 500+ | 47.63 грн |
| 1000+ | 45.29 грн |
| BAS21VMFHTE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.70 грн |
| 9000+ | 3.00 грн |
| BAS21VMFHTE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 36474 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.24 грн |
| 29+ | 10.69 грн |
| 50+ | 7.64 грн |
| 100+ | 6.23 грн |
| 500+ | 4.57 грн |
| VS18VUA1LAMTFTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: PMDTM
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 20.5A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: TVS DIODE 18VWM 29.2VC PMDTM
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: PMDTM
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 20.5A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| VS18VUA1LAMTFTR |
![]() |
Виробник: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: PMDTM
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 20.5A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Description: TVS DIODE 18VWM 29.2VC PMDTM
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 29.2V
Voltage - Breakdown (Min): 20V
Unidirectional Channels: 1
Supplier Device Package: PMDTM
Voltage - Reverse Standoff (Typ): 18V
Current - Peak Pulse (10/1000µs): 20.5A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| KDZVTFTR18B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Supplier Device Package: PMDU
Voltage - Zener (Nom) (Vz): 19.15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Power - Max: 1 W
Description: DIODE ZENER 19.15V 1W PMDU
Supplier Device Package: PMDU
Voltage - Zener (Nom) (Vz): 19.15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Power - Max: 1 W
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.39 грн |
| 6000+ | 8.67 грн |
| 9000+ | 7.80 грн |
| KDZVTFTR18B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Power - Max: 1 W
Supplier Device Package: PMDU
Voltage - Zener (Nom) (Vz): 19.15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 19.15V 1W PMDU
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Power - Max: 1 W
Supplier Device Package: PMDU
Voltage - Zener (Nom) (Vz): 19.15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
на замовлення 19809 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.89 грн |
| 12+ | 26.04 грн |
| 100+ | 15.60 грн |
| 500+ | 13.56 грн |
| 1000+ | 9.22 грн |
| DTB143ECHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS PNP 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.14 грн |
| DTB143ECHZGT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 200 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 200 MHz
Description: TRANS PREBIAS PNP 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 200 mW
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 200 MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 34+ | 9.16 грн |
| 100+ | 5.67 грн |
| 500+ | 3.89 грн |
| 1000+ | 3.43 грн |
| DTB143ECT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.03 грн |
| 6000+ | 3.49 грн |
| DTB143ECT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 6355 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.82 грн |
| 27+ | 11.53 грн |
| 100+ | 7.15 грн |
| 500+ | 4.95 грн |
| 1000+ | 4.37 грн |
| DTB143EKFRAT146 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTB143EKFRAT146 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Resistors Included: R1 and R2
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| KX128-1091 |
Виробник: Rohm Semiconductor
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Supplier Device Package: 12-LGA (2x2)
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Supplier Device Package: 12-LGA (2x2)
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| BCX17HZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 45V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BCX17HZGT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 45V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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| DTC123EEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: EMT3F (SOT-416FL)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: EMT3F (SOT-416FL)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| DTC123EEBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: EMT3F (SOT-416FL)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: EMT3F (SOT-416FL)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
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| FDZT40RB5.1 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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| FDZT40RB5.1 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.58 грн |
| 19+ | 16.57 грн |
| 100+ | 8.35 грн |
| FDZT40RB7.5 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.5V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Description: DIODE ZENER 7.5V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
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| FDZT40RB6.2 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW SMD0402
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 100 mW
Supplier Device Package: SMD0402
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 6.2V 100MW SMD0402
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 100 mW
Supplier Device Package: SMD0402
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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| FDZT40RB6.2 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW SMD0402
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 100 mW
Supplier Device Package: SMD0402
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 6.2V 100MW SMD0402
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 100 mW
Supplier Device Package: SMD0402
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Tolerance: ±5%
Packaging: Cut Tape (CT)
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| FDZT40RB5.6 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 100MW SMD0402
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 100 mW
Supplier Device Package: SMD0402
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 5.6V 100MW SMD0402
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 100 mW
Supplier Device Package: SMD0402
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 40000 шт
В кошику
од. на суму грн.
| ESR18EZPJ104 |
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Виробник: Rohm Semiconductor
Description: RES 100K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
Description: RES 100K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
на замовлення 3909 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.89 грн |
| 52+ | 5.88 грн |
| 66+ | 4.64 грн |
| 78+ | 3.68 грн |
| 100+ | 3.16 грн |
| 250+ | 2.64 грн |
| 500+ | 2.30 грн |
| 1000+ | 2.06 грн |
| RRU1LAM4STFTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.96 грн |
| 6000+ | 12.76 грн |
| RRU1LAM4STFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 6002 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.03 грн |
| 10+ | 34.13 грн |
| 100+ | 23.70 грн |
| 500+ | 17.37 грн |
| 1000+ | 14.11 грн |

























