Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105892) > Сторінка 817 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BH28RB1WGUT-E2 | Rohm Semiconductor |
Description: IC REG LIN 2.8V 150MA 4-VCSP60N1Packaging: Cut Tape (CT) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 72 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-VCSP60N1 (1x1.04) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active PSRR: 63dB (1kHz) Voltage Dropout (Max): 0.15V @ 100mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BH18RB1WGUT-E2 | Rohm Semiconductor |
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 72 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-VCSP60N1 (1x1.04) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 63dB (1kHz) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BH18RB1WGUT-E2 | Rohm Semiconductor |
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1Packaging: Cut Tape (CT) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 72 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-VCSP60N1 (1x1.04) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 63dB (1kHz) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BH31RB1WGUT-E2 | Rohm Semiconductor |
Description: IC REG LIN 3.1V 150MA 4-VCSP60N1Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 72 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-VCSP60N1 (1x1.04) Voltage - Output (Min/Fixed): 3.1V Control Features: On/Off PSRR: 63dB (1kHz) Voltage Dropout (Max): 0.15V @ 100mA Protection Features: Over Current |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD50FA1FP3-ZTL | Rohm Semiconductor |
Description: IC REG LINEAR 5V 100MA SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -25°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active Voltage Dropout (Max): 3V @ 100mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 450 µA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BD50FA1FP3-ZTL | Rohm Semiconductor |
Description: IC REG LINEAR 5V 100MA SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -25°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active Voltage Dropout (Max): 3V @ 100mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 450 µA |
на замовлення 853 шт: термін постачання 21-31 дні (днів) |
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SCT3060ARC14 | Rohm Semiconductor |
Description: SICFET N-CH 650V 39A TO247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V |
на замовлення 334 шт: термін постачання 21-31 дні (днів) |
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BSM080D12P2C008 | Rohm Semiconductor |
Description: MOSFET 2N-CH 1200V 80A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 600W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs(th) (Max) @ Id: 4V @ 13.2mA Supplier Device Package: Module Part Status: Active |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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| SLA-360LT3FXF | Rohm Semiconductor |
Description: LED RED GAAIAS Packaging: Bulk Package / Case: Radial Color: Red Mounting Type: Through Hole Millicandela Rating: 68mcd Voltage - Forward (Vf) (Typ): 1.75V Current - Test: 20mA Viewing Angle: 40° Height (Max): 5.50mm Wavelength - Peak: 660nm Supplier Device Package: T-1 Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 3.10mm Dia |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BD99954MWV-E2 | Rohm Semiconductor |
Description: IC BATT LI-ION 1-4C UQFN040V5050Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Number of Cells: 1 ~ 4 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C, SMBus Operating Temperature: -30°C ~ 85°C Battery Chemistry: Lithium Ion Supplier Device Package: UQFN040V5050 Fault Protection: Over Voltage, Short Circuit |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BD99954MWV-E2 | Rohm Semiconductor |
Description: IC BATT LI-ION 1-4C UQFN040V5050Packaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Number of Cells: 1 ~ 4 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C, SMBus Operating Temperature: -30°C ~ 85°C Battery Chemistry: Lithium Ion Supplier Device Package: UQFN040V5050 Fault Protection: Over Voltage, Short Circuit |
на замовлення 2232 шт: термін постачання 21-31 дні (днів) |
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| BD99954MWV-EVK-101 | Rohm Semiconductor | Description: EVAL BOARD FOR BD99954 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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BD99954GW-E2 | Rohm Semiconductor |
Description: IC BAT MON LI-ION 1-4C UCSP55M3CPackaging: Tape & Reel (TR) Package / Case: 41-UFBGA, CSPBGA Number of Cells: 1 ~ 4 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C, SMBus Operating Temperature: -30°C ~ 85°C Battery Chemistry: Lithium Ion Supplier Device Package: UCSP55M3C Fault Protection: Over Voltage, Short Circuit Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RB560VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 500MA UMD2Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA Current - Reverse Leakage @ Vr: 40 µA @ 40 V |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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RB560VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 500MA UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA Current - Reverse Leakage @ Vr: 40 µA @ 40 V |
на замовлення 39765 шт: термін постачання 21-31 дні (днів) |
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BD49L49G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD49L49G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD49L51G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD49L51G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD49L52G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD49L44G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOPPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 4.4V Supplier Device Package: 3-SSOP Part Status: Not For New Designs DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD49L44G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 4.4V Supplier Device Package: 3-SSOP Part Status: Not For New Designs DigiKey Programmable: Not Verified |
на замовлення 2973 шт: термін постачання 21-31 дні (днів) |
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BD49L50G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD49L50G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 2958 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD49L48G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD49L48G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 2878 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD49L55G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD49L55G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 2690 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RESD1CANT116 | Rohm Semiconductor |
Description: TVS DIODE 24VWM 44VC SSD3 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RESD1CANT116 | Rohm Semiconductor |
Description: TVS DIODE 24VWM 44VC SSD3 |
на замовлення 2635 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD62018AFS-E2 | Rohm Semiconductor |
Description: IC MOTOR DRV PWR MOSFET 24SSOP-APackaging: Tape & Reel (TR) Package / Case: 24-SOP (0.213", 5.40mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: Parallel Operating Temperature: -40°C ~ 110°C (TJ) Output Configuration: Half Bridge (6) Voltage - Supply: 10V ~ 18V Applications: Fan Controller Technology: Power MOSFET Voltage - Load: 5V Supplier Device Package: 24-SSOP-A Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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BD62018AFS-E2 | Rohm Semiconductor |
Description: IC MOTOR DRV PWR MOSFET 24SSOP-APackaging: Cut Tape (CT) Package / Case: 24-SOP (0.213", 5.40mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: Parallel Operating Temperature: -40°C ~ 110°C (TJ) Output Configuration: Half Bridge (6) Voltage - Supply: 10V ~ 18V Applications: Fan Controller Technology: Power MOSFET Voltage - Load: 5V Supplier Device Package: 24-SSOP-A Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
на замовлення 1898 шт: термін постачання 21-31 дні (днів) |
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RF4L055GNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 5.5A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V |
на замовлення 13577 шт: термін постачання 21-31 дні (днів) |
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BU2JJA2DG-CTR | Rohm Semiconductor |
Description: IC REG LINEAR 2.85V 100MA 5SSOP Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 68dB (1kHz) Voltage Dropout (Max): 0.155V @ 100mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BU2JJA2DG-CTR | Rohm Semiconductor |
Description: IC REG LINEAR 2.85V 100MA 5SSOP Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 68dB (1kHz) Voltage Dropout (Max): 0.155V @ 100mA Protection Features: Over Current, Over Temperature |
на замовлення 2216 шт: термін постачання 21-31 дні (днів) |
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RQ5E025TNTL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RQ5E025TNTL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V |
на замовлення 9630 шт: термін постачання 21-31 дні (днів) |
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SCS306AHGC9 | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 6A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS302AHGC9 | Rohm Semiconductor |
Description: SHORTER RECOVERY TIME, ENABLING |
на замовлення 873 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SCS304AHGC9 | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 4A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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SCS308AHGC9 | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 8A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 400pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS308AJTLL | Rohm Semiconductor |
Description: DIODES SILICON CARBIDE |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SCS308AJTLL | Rohm Semiconductor |
Description: DIODES SILICON CARBIDE |
на замовлення 981 шт: термін постачання 21-31 дні (днів) |
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SCS304AMC | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 4A TO220FMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS306AMC | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 6A TO220FMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 534 шт: термін постачання 21-31 дні (днів) |
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SCS308AMC | Rohm Semiconductor |
Description: DIODES SILICON CARBIDE |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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SCS302AJTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 2.15A LPTLPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 2.15A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SCS302AJTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 2.15A LPTLPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 2.15A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V |
на замовлення 499 шт: термін постачання 21-31 дні (днів) |
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SCS304AJTLL | Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 4A LPTLPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SCS304AJTLL | Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 4A LPTLPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 964 шт: термін постачання 21-31 дні (днів) |
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SCS306AJTLL | Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 6A LPTLPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6011END3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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R6011END3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 371 шт: термін постачання 21-31 дні (днів) |
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R6076ENZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 76A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V Power Dissipation (Max): 735W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V |
на замовлення 463 шт: термін постачання 21-31 дні (днів) |
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RR264MM-400TFTR | Rohm Semiconductor |
Description: DIODE STANDARD 400V 700MA PMDUPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 700mA Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SCT3022KLGC11 | Rohm Semiconductor |
Description: SICFET N-CH 1200V 95A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Power Dissipation (Max): 427W Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800 |
на замовлення 198 шт: термін постачання 21-31 дні (днів) |
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CDZFHT2RA6.2B | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 100MW VMN2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CDZFHT2RA6.2B | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 100MW VMN2 |
на замовлення 7560 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD49E41G-MTR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5SSOPPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 4.1V Supplier Device Package: 5-SSOP Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BD49E41G-MTR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 4.1V Supplier Device Package: 5-SSOP Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 8504 шт: термін постачання 21-31 дні (днів) |
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| BH28RB1WGUT-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 2.8V 150MA 4-VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 2.8V 150MA 4-VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| BH18RB1WGUT-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BH18RB1WGUT-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| BH31RB1WGUT-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 3.1V 150MA 4-VCSP60N1
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 3.1V
Control Features: On/Off
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current
Description: IC REG LIN 3.1V 150MA 4-VCSP60N1
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 3.1V
Control Features: On/Off
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD50FA1FP3-ZTL |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 450 µA
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 450 µA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BD50FA1FP3-ZTL |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 450 µA
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 450 µA
на замовлення 853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.09 грн |
| 10+ | 33.14 грн |
| 25+ | 27.30 грн |
| 100+ | 19.47 грн |
| 250+ | 16.44 грн |
| 500+ | 14.58 грн |
| SCT3060ARC14 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 39A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Description: SICFET N-CH 650V 39A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1479.61 грн |
| 30+ | 901.74 грн |
| 120+ | 822.63 грн |
| BSM080D12P2C008 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 80A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 600W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 13.2mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 80A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 600W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 13.2mA
Supplier Device Package: Module
Part Status: Active
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 23522.23 грн |
| 12+ | 21280.57 грн |
| SLA-360LT3FXF |
Виробник: Rohm Semiconductor
Description: LED RED GAAIAS
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 68mcd
Voltage - Forward (Vf) (Typ): 1.75V
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.50mm
Wavelength - Peak: 660nm
Supplier Device Package: T-1
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
Description: LED RED GAAIAS
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 68mcd
Voltage - Forward (Vf) (Typ): 1.75V
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.50mm
Wavelength - Peak: 660nm
Supplier Device Package: T-1
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
товару немає в наявності
В кошику
од. на суму грн.
| BD99954MWV-E2 |
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Виробник: Rohm Semiconductor
Description: IC BATT LI-ION 1-4C UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UQFN040V5050
Fault Protection: Over Voltage, Short Circuit
Description: IC BATT LI-ION 1-4C UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UQFN040V5050
Fault Protection: Over Voltage, Short Circuit
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD99954MWV-E2 |
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Виробник: Rohm Semiconductor
Description: IC BATT LI-ION 1-4C UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UQFN040V5050
Fault Protection: Over Voltage, Short Circuit
Description: IC BATT LI-ION 1-4C UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UQFN040V5050
Fault Protection: Over Voltage, Short Circuit
на замовлення 2232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 580.42 грн |
| 10+ | 383.69 грн |
| 25+ | 338.29 грн |
| 100+ | 269.80 грн |
| 250+ | 246.67 грн |
| 500+ | 232.58 грн |
| 1000+ | 217.26 грн |
| BD99954MWV-EVK-101 |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD99954
Description: EVAL BOARD FOR BD99954
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| BD99954GW-E2 |
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Виробник: Rohm Semiconductor
Description: IC BAT MON LI-ION 1-4C UCSP55M3C
Packaging: Tape & Reel (TR)
Package / Case: 41-UFBGA, CSPBGA
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UCSP55M3C
Fault Protection: Over Voltage, Short Circuit
Part Status: Active
Description: IC BAT MON LI-ION 1-4C UCSP55M3C
Packaging: Tape & Reel (TR)
Package / Case: 41-UFBGA, CSPBGA
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UCSP55M3C
Fault Protection: Over Voltage, Short Circuit
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RB560VM-40TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.61 грн |
| 6000+ | 3.99 грн |
| 9000+ | 3.76 грн |
| 15000+ | 3.29 грн |
| 21000+ | 3.15 грн |
| 30000+ | 3.01 грн |
| RB560VM-40TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
на замовлення 39765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.20 грн |
| 24+ | 13.06 грн |
| 100+ | 8.15 грн |
| 500+ | 5.64 грн |
| 1000+ | 4.99 грн |
| BD49L49G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| BD49L49G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| BD49L51G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| BD49L51G-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| BD49L52G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
товару немає в наявності
В кошику
од. на суму грн.
| BD49L44G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.4V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.4V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD49L44G-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.4V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.4V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2973 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.44 грн |
| 27+ | 11.53 грн |
| 30+ | 10.23 грн |
| 100+ | 8.22 грн |
| 250+ | 7.57 грн |
| 500+ | 7.17 грн |
| 1000+ | 6.74 грн |
| BD49L50G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD49L50G-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 2958 шт:
термін постачання 21-31 дні (днів)
| BD49L48G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD49L48G-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 2878 шт:
термін постачання 21-31 дні (днів)
| BD49L55G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD49L55G-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 2690 шт:
термін постачання 21-31 дні (днів)
| RESD1CANT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 24VWM 44VC SSD3
Description: TVS DIODE 24VWM 44VC SSD3
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RESD1CANT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 24VWM 44VC SSD3
Description: TVS DIODE 24VWM 44VC SSD3
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)
| BD62018AFS-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRV PWR MOSFET 24SSOP-A
Packaging: Tape & Reel (TR)
Package / Case: 24-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 10V ~ 18V
Applications: Fan Controller
Technology: Power MOSFET
Voltage - Load: 5V
Supplier Device Package: 24-SSOP-A
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRV PWR MOSFET 24SSOP-A
Packaging: Tape & Reel (TR)
Package / Case: 24-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 10V ~ 18V
Applications: Fan Controller
Technology: Power MOSFET
Voltage - Load: 5V
Supplier Device Package: 24-SSOP-A
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BD62018AFS-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRV PWR MOSFET 24SSOP-A
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 10V ~ 18V
Applications: Fan Controller
Technology: Power MOSFET
Voltage - Load: 5V
Supplier Device Package: 24-SSOP-A
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRV PWR MOSFET 24SSOP-A
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 10V ~ 18V
Applications: Fan Controller
Technology: Power MOSFET
Voltage - Load: 5V
Supplier Device Package: 24-SSOP-A
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 1898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.61 грн |
| 10+ | 144.39 грн |
| 25+ | 132.16 грн |
| 100+ | 111.43 грн |
| 250+ | 107.27 грн |
| RF4L055GNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
на замовлення 13577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.87 грн |
| 10+ | 63.53 грн |
| 100+ | 42.10 грн |
| 500+ | 30.90 грн |
| 1000+ | 28.12 грн |
| BU2JJA2DG-CTR |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.85V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.85V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BU2JJA2DG-CTR |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.85V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.85V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
на замовлення 2216 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 58.49 грн |
| 25+ | 55.50 грн |
| 100+ | 42.78 грн |
| 250+ | 39.99 грн |
| 500+ | 35.34 грн |
| 1000+ | 27.44 грн |
| RQ5E025TNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.22 грн |
| 6000+ | 10.88 грн |
| 9000+ | 10.43 грн |
| RQ5E025TNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
на замовлення 9630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.82 грн |
| 11+ | 27.79 грн |
| 100+ | 18.90 грн |
| 500+ | 13.92 грн |
| 1000+ | 12.66 грн |
| SCS306AHGC9 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| SCS302AHGC9 |
![]() |
Виробник: Rohm Semiconductor
Description: SHORTER RECOVERY TIME, ENABLING
Description: SHORTER RECOVERY TIME, ENABLING
на замовлення 873 шт:
термін постачання 21-31 дні (днів)
| SCS304AHGC9 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 4A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 4A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.05 грн |
| 50+ | 129.21 грн |
| SCS308AHGC9 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 400pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 8A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 400pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| SCS308AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODES SILICON CARBIDE
Description: DIODES SILICON CARBIDE
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SCS308AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODES SILICON CARBIDE
Description: DIODES SILICON CARBIDE
на замовлення 981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 393.29 грн |
| 10+ | 340.47 грн |
| 100+ | 278.94 грн |
| 500+ | 222.85 грн |
| SCS304AMC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 4A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 4A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| SCS306AMC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 534 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.49 грн |
| 50+ | 214.71 грн |
| 100+ | 184.04 грн |
| 500+ | 153.53 грн |
| SCS308AMC |
![]() |
Виробник: Rohm Semiconductor
Description: DIODES SILICON CARBIDE
Description: DIODES SILICON CARBIDE
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 410.74 грн |
| SCS302AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SCS302AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
на замовлення 499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.19 грн |
| 10+ | 150.65 грн |
| 100+ | 105.05 грн |
| SCS304AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 4A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SCS304AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 4A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 964 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.90 грн |
| 10+ | 150.27 грн |
| 100+ | 121.13 грн |
| 500+ | 106.02 грн |
| SCS306AJTLL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 6A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 127.26 грн |
| R6011END3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| R6011END3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 371 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.05 грн |
| 10+ | 208.83 грн |
| 100+ | 167.87 грн |
| R6076ENZ4C13 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Description: MOSFET N-CH 600V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
на замовлення 463 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1137.85 грн |
| 30+ | 865.34 грн |
| RR264MM-400TFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 400V 700MA PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 700MA PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.64 грн |
| 9000+ | 7.18 грн |
| SCT3022KLGC11 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 95A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
Description: SICFET N-CH 1200V 95A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3512.67 грн |
| 30+ | 2676.66 грн |
| CDZFHT2RA6.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW VMN2
Description: DIODE ZENER 6.2V 100MW VMN2
товару немає в наявності
В кошику
од. на суму грн.
| CDZFHT2RA6.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW VMN2
Description: DIODE ZENER 6.2V 100MW VMN2
на замовлення 7560 шт:
термін постачання 21-31 дні (днів)
| BD49E41G-MTR |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.1V
Supplier Device Package: 5-SSOP
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.1V
Supplier Device Package: 5-SSOP
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.95 грн |
| 6000+ | 14.01 грн |
| BD49E41G-MTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.1V
Supplier Device Package: 5-SSOP
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.1V
Supplier Device Package: 5-SSOP
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 8504 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.44 грн |
| 12+ | 27.26 грн |
| 25+ | 24.40 грн |
| 100+ | 19.96 грн |
| 250+ | 18.56 грн |
| 500+ | 17.72 грн |
| 1000+ | 16.74 грн |





























