Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105892) > Сторінка 864 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BD6961F-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 3.3V-14V 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 3.3V ~ 14V Applications: Fan Motor Driver Technology: Power MOSFET Voltage - Load: 3.3V ~ 14V Supplier Device Package: 8-SOP Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC Part Status: Active |
на замовлення 2441 шт: термін постачання 21-31 дні (днів) |
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BD64547MUV-E2 | Rohm Semiconductor |
Description: SYSTEM MOTOR DRIVER FOR PRINTERSStep Resolution: 1 Motor Type - AC, DC: Brushless DC (BLDC) Motor Type - Stepper: Bipolar Supplier Device Package: VQFN048V7070 Voltage - Load: 3.7V ~ 50V Technology: Power MOSFET Applications: Printer Voltage - Supply: 9V ~ 45V Output Configuration: Half Bridge (4) Operating Temperature: -25°C ~ 85°C Interface: Serial Current - Output: 2A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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BD63006MUV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 8V-28V 24VQFNPart Status: Active Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: VQFN020V4040 Voltage - Load: 8V ~ 28V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 8V ~ 28V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: Logic Current - Output: 1.5A Function: Driver Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BD63006MUV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 8V-28V 24VQFNMotor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: VQFN020V4040 Voltage - Load: 8V ~ 28V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 8V ~ 28V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: Logic Current - Output: 1.5A Function: Driver Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BD63001AMUV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFNOperating Temperature: -40°C ~ 85°C (TA) Interface: Logic Current - Output: 30mA Function: Driver Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: VQFN020V4040 Voltage - Load: 6V ~ 28V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Pre-Driver - Half Bridge (3) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BD63001AMUV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFNPart Status: Active Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: VQFN020V4040 Voltage - Load: 6V ~ 28V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 85°C (TA) Interface: Logic Current - Output: 30mA Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Packaging: Cut Tape (CT) Function: Driver |
на замовлення 2366 шт: термін постачання 21-31 дні (днів) |
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R6535KNX3C16 | Rohm Semiconductor |
Description: 650V 35A, TO-220AB, HIGH-SPEED SPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.3mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6524KNX3C16 | Rohm Semiconductor |
Description: 650V 24A, TO-220AB, HIGH-SPEED SInput Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 750µA Power Dissipation (Max): 253W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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R6524KNX3C16 | Rohm Semiconductor |
Description: 650V 24A, TO-220AB, HIGH-SPEED SRds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 750µA Power Dissipation (Max): 253W (Tc) |
на замовлення 388 шт: термін постачання 21-31 дні (днів) |
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R6520KNX3C16 | Rohm Semiconductor |
Description: 650V 20A, TO-220AB, HIGH-SPEED SInput Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 630µA Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 761 шт: термін постачання 21-31 дні (днів) |
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R6006ANDTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A CPTPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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SCMP13WBC8W1 A U | Rohm Semiconductor |
Description: LED WHITE 2SMDLens Size: 0.60mm Lens Style: Square with Flat Top Part Status: Active Supplier Device Package: 2-SMD Height (Max): 0.25mm Current - Test: 5mA Voltage - Forward (Vf) (Typ): 2.9V Configuration: Standard Millicandela Rating: 150mcd Mounting Type: Surface Mount Size / Dimension: 1.00mm L x 0.60mm W Color: White Package / Case: 0402 (1006 Metric) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB550VYM-30FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2MQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 30 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 10.7 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RB550VYM-30FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A TUMD2MQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 30 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 10.7 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2458 шт: термін постачання 21-31 дні (днів) |
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LF-3011MA | Rohm Semiconductor |
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMDPower Dissipation (Max): 480mW Wavelength - Peak: 563nm Current - Test: 10mA Voltage - Forward (Vf) (Typ): 2.1V Digit/Alpha Size: 0.32" (8.00mm) Common Pin: Common Anode Millicandela Rating: 10mcd Number of Characters: 1 Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm) Display Type: 7-Segment Color: Green Package / Case: 10-SMD, Gull Wing Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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LF-3011MA | Rohm Semiconductor |
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMDPower Dissipation (Max): 480mW Wavelength - Peak: 563nm Current - Test: 10mA Voltage - Forward (Vf) (Typ): 2.1V Digit/Alpha Size: 0.32" (8.00mm) Common Pin: Common Anode Millicandela Rating: 10mcd Number of Characters: 1 Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm) Display Type: 7-Segment Color: Green Package / Case: 10-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 2972 шт: термін постачання 21-31 дні (днів) |
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BD9355MWV-E2 | Rohm Semiconductor |
Description: IC REG DGTL CAM 7OUT 36UQFN |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BD4933FVE-TR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5VSOF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD4933FVE-TR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5VSOF |
на замовлення 2935 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD49L33G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD49L33G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 5980 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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1SS356VMFHTE-17 | Rohm Semiconductor |
Description: RF DIODE PIN 35V UMD2Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz Resistance @ If, F: 900mOhm @ 2mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: UMD2 Grade: Automotive Part Status: Active Current - Max: 100 mA Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1SS356VMFHTE-17 | Rohm Semiconductor |
Description: RF DIODE PIN 35V UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz Resistance @ If, F: 900mOhm @ 2mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: UMD2 Grade: Automotive Part Status: Active Current - Max: 100 mA Qualification: AEC-Q101 |
на замовлення 4880 шт: термін постачання 21-31 дні (днів) |
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RBR15BGE40ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 15A TO252GECurrent - Reverse Leakage @ Vr: 240 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RBR15BGE40ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 15A TO252GEDiode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 240 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 15A |
на замовлення 2181 шт: термін постачання 21-31 дні (днів) |
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RBR10BGE60ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 60V 10A TO252GECurrent - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RBR10BGE60ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 60V 10A TO252GECurrent - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2279 шт: термін постачання 21-31 дні (днів) |
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RBR20BGE40ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 20A TO252GECurrent - Reverse Leakage @ Vr: 360 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RBR20BGE40ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 20A TO252GECurrent - Reverse Leakage @ Vr: 360 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1767 шт: термін постачання 21-31 дні (днів) |
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RBR15BGE30ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 15A TO252GECurrent - Reverse Leakage @ Vr: 200 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RBR15BGE30ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 15A TO252GECurrent - Reverse Leakage @ Vr: 200 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR15BGE60ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 60V 15A TO252GECurrent - Reverse Leakage @ Vr: 400 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RBR15BGE60ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 60V 15A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7.5 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBQ10BGE45ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 10A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 45 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ10BGE45ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 10A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 45 V |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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RBQ20BGE45ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 20A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ20BGE45ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 20A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
на замовлення 2329 шт: термін постачання 21-31 дні (днів) |
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RBQ10BGE65ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 65V 10A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RBQ10BGE65ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 65V 10A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V |
на замовлення 2527 шт: термін постачання 21-31 дні (днів) |
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RBR10BGE30ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 10A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RBR10BGE30ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 10A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 4583 шт: термін постачання 21-31 дні (днів) |
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RBQ15BGE65ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 65V 15A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A Current - Reverse Leakage @ Vr: 140 µA @ 65 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RBQ15BGE65ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 65V 15A TO252GECurrent - Reverse Leakage @ Vr: 140 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 65 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2520 шт: термін постачання 21-31 дні (днів) |
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RBQ15BGE45ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 15A TO252GECurrent - Reverse Leakage @ Vr: 140 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RBQ15BGE45ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 15A TO252GECurrent - Reverse Leakage @ Vr: 140 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1407 шт: термін постачання 21-31 дні (днів) |
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RFN6BGE2DTL | Rohm Semiconductor |
Description: SUPER FAST RECOVERY DIODE. RFN6BPart Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RFN6BGE2DTL | Rohm Semiconductor |
Description: SUPER FAST RECOVERY DIODE. RFN6BCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RF601BGE2DTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 3A TO252GEDiode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 3A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RF601BGE2DTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 3A TO252GECurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2424 шт: термін постачання 21-31 дні (днів) |
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RB088BGE-40TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 5A TO-252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RB088BGE-40TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 5A TO-252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 40 V |
на замовлення 1666 шт: термін постачання 21-31 дні (днів) |
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RB098BGE-40TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 3A TO-252GE |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RB098BGE-40TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 3A TO-252GE |
на замовлення 2330 шт: термін постачання 21-31 дні (днів) |
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RB085BGE-90TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 90V 5A TO-252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RB085BGE-90TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 90V 5A TO-252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
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RBR20BGE30ATL | Rohm Semiconductor |
Description: 30V, 20A, TO-252, CATHODE COMMONPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RBR20BGE30ATL | Rohm Semiconductor |
Description: 30V, 20A, TO-252, CATHODE COMMONCurrent - Reverse Leakage @ Vr: 300 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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RB088BGE-30TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 5A TO-252GECurrent - Reverse Leakage @ Vr: 3 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RB088BGE-30TL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 5A TO-252GECurrent - Reverse Leakage @ Vr: 3 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1882 шт: термін постачання 21-31 дні (днів) |
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RBQ20BGE65ATL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 65V 20A TO252GECurrent - Reverse Leakage @ Vr: 200 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 65 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| BD6961F-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 3.3V-14V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.3V ~ 14V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 3.3V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 3.3V-14V 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.3V ~ 14V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 3.3V ~ 14V
Supplier Device Package: 8-SOP
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Part Status: Active
на замовлення 2441 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.56 грн |
| 10+ | 100.64 грн |
| 25+ | 94.96 грн |
| 100+ | 75.92 грн |
| 250+ | 71.29 грн |
| 500+ | 62.38 грн |
| 1000+ | 50.84 грн |
| BD64547MUV-E2 |
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Виробник: Rohm Semiconductor
Description: SYSTEM MOTOR DRIVER FOR PRINTERS
Step Resolution: 1
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: VQFN048V7070
Voltage - Load: 3.7V ~ 50V
Technology: Power MOSFET
Applications: Printer
Voltage - Supply: 9V ~ 45V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 85°C
Interface: Serial
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SYSTEM MOTOR DRIVER FOR PRINTERS
Step Resolution: 1
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: VQFN048V7070
Voltage - Load: 3.7V ~ 50V
Technology: Power MOSFET
Applications: Printer
Voltage - Supply: 9V ~ 45V
Output Configuration: Half Bridge (4)
Operating Temperature: -25°C ~ 85°C
Interface: Serial
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| BD63006MUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 8V-28V 24VQFN
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: VQFN020V4040
Voltage - Load: 8V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 8V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Logic
Current - Output: 1.5A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER 8V-28V 24VQFN
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: VQFN020V4040
Voltage - Load: 8V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 8V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Logic
Current - Output: 1.5A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD63006MUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 8V-28V 24VQFN
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: VQFN020V4040
Voltage - Load: 8V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 8V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Logic
Current - Output: 1.5A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Description: IC MOTOR DRIVER 8V-28V 24VQFN
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: VQFN020V4040
Voltage - Load: 8V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 8V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Logic
Current - Output: 1.5A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.63 грн |
| 10+ | 76.51 грн |
| 25+ | 69.48 грн |
| 100+ | 57.98 грн |
| 250+ | 54.52 грн |
| 500+ | 52.44 грн |
| 1000+ | 49.90 грн |
| BD63001AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFN
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Logic
Current - Output: 30mA
Function: Driver
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: VQFN020V4040
Voltage - Load: 6V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (3)
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFN
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Logic
Current - Output: 30mA
Function: Driver
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: VQFN020V4040
Voltage - Load: 6V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (3)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD63001AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFN
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: VQFN020V4040
Voltage - Load: 6V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Logic
Current - Output: 30mA
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Function: Driver
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFN
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: VQFN020V4040
Voltage - Load: 6V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Logic
Current - Output: 30mA
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Function: Driver
на замовлення 2366 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.34 грн |
| 10+ | 117.13 грн |
| 25+ | 107.02 грн |
| 100+ | 89.96 грн |
| 250+ | 84.96 грн |
| 500+ | 81.95 грн |
| 1000+ | 78.17 грн |
| R6535KNX3C16 |
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Виробник: Rohm Semiconductor
Description: 650V 35A, TO-220AB, HIGH-SPEED S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.3mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: 650V 35A, TO-220AB, HIGH-SPEED S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.3mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 608.18 грн |
| 50+ | 317.79 грн |
| 100+ | 292.01 грн |
| 500+ | 235.46 грн |
| R6524KNX3C16 |
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Виробник: Rohm Semiconductor
Description: 650V 24A, TO-220AB, HIGH-SPEED S
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Description: 650V 24A, TO-220AB, HIGH-SPEED S
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6524KNX3C16 |
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Виробник: Rohm Semiconductor
Description: 650V 24A, TO-220AB, HIGH-SPEED S
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 253W (Tc)
Description: 650V 24A, TO-220AB, HIGH-SPEED S
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 253W (Tc)
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 360.78 грн |
| 10+ | 312.37 грн |
| 100+ | 255.93 грн |
| R6520KNX3C16 |
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Виробник: Rohm Semiconductor
Description: 650V 20A, TO-220AB, HIGH-SPEED S
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 630µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: 650V 20A, TO-220AB, HIGH-SPEED S
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 630µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 761 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 401.22 грн |
| 10+ | 257.40 грн |
| 50+ | 202.08 грн |
| 100+ | 172.95 грн |
| 500+ | 143.69 грн |
| R6006ANDTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A CPT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Description: MOSFET N-CH 600V 6A CPT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SCMP13WBC8W1 A U |
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Виробник: Rohm Semiconductor
Description: LED WHITE 2SMD
Lens Size: 0.60mm
Lens Style: Square with Flat Top
Part Status: Active
Supplier Device Package: 2-SMD
Height (Max): 0.25mm
Current - Test: 5mA
Voltage - Forward (Vf) (Typ): 2.9V
Configuration: Standard
Millicandela Rating: 150mcd
Mounting Type: Surface Mount
Size / Dimension: 1.00mm L x 0.60mm W
Color: White
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Description: LED WHITE 2SMD
Lens Size: 0.60mm
Lens Style: Square with Flat Top
Part Status: Active
Supplier Device Package: 2-SMD
Height (Max): 0.25mm
Current - Test: 5mA
Voltage - Forward (Vf) (Typ): 2.9V
Configuration: Standard
Millicandela Rating: 150mcd
Mounting Type: Surface Mount
Size / Dimension: 1.00mm L x 0.60mm W
Color: White
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RB550VYM-30FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 10.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 10.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RB550VYM-30FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 10.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 10.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2458 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 15+ | 21.61 грн |
| 100+ | 13.70 грн |
| 500+ | 9.64 грн |
| 1000+ | 8.59 грн |
| LF-3011MA |
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Виробник: Rohm Semiconductor
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMD
Power Dissipation (Max): 480mW
Wavelength - Peak: 563nm
Current - Test: 10mA
Voltage - Forward (Vf) (Typ): 2.1V
Digit/Alpha Size: 0.32" (8.00mm)
Common Pin: Common Anode
Millicandela Rating: 10mcd
Number of Characters: 1
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Display Type: 7-Segment
Color: Green
Package / Case: 10-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMD
Power Dissipation (Max): 480mW
Wavelength - Peak: 563nm
Current - Test: 10mA
Voltage - Forward (Vf) (Typ): 2.1V
Digit/Alpha Size: 0.32" (8.00mm)
Common Pin: Common Anode
Millicandela Rating: 10mcd
Number of Characters: 1
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Display Type: 7-Segment
Color: Green
Package / Case: 10-SMD, Gull Wing
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 174.59 грн |
| LF-3011MA |
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Виробник: Rohm Semiconductor
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMD
Power Dissipation (Max): 480mW
Wavelength - Peak: 563nm
Current - Test: 10mA
Voltage - Forward (Vf) (Typ): 2.1V
Digit/Alpha Size: 0.32" (8.00mm)
Common Pin: Common Anode
Millicandela Rating: 10mcd
Number of Characters: 1
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Display Type: 7-Segment
Color: Green
Package / Case: 10-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMD
Power Dissipation (Max): 480mW
Wavelength - Peak: 563nm
Current - Test: 10mA
Voltage - Forward (Vf) (Typ): 2.1V
Digit/Alpha Size: 0.32" (8.00mm)
Common Pin: Common Anode
Millicandela Rating: 10mcd
Number of Characters: 1
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Display Type: 7-Segment
Color: Green
Package / Case: 10-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 2972 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 400.43 грн |
| 10+ | 287.79 грн |
| 100+ | 229.98 грн |
| 500+ | 192.13 грн |
| BD9355MWV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG DGTL CAM 7OUT 36UQFN
Description: IC REG DGTL CAM 7OUT 36UQFN
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD4933FVE-TR |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD4933FVE-TR |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)
| BD49L33G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| BD49L33G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
| 1SS356VMFHTE-17 |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 35V UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Grade: Automotive
Part Status: Active
Current - Max: 100 mA
Qualification: AEC-Q101
Description: RF DIODE PIN 35V UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Grade: Automotive
Part Status: Active
Current - Max: 100 mA
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.05 грн |
| 1SS356VMFHTE-17 |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 35V UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Grade: Automotive
Part Status: Active
Current - Max: 100 mA
Qualification: AEC-Q101
Description: RF DIODE PIN 35V UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Grade: Automotive
Part Status: Active
Current - Max: 100 mA
Qualification: AEC-Q101
на замовлення 4880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.44 грн |
| 13+ | 24.05 грн |
| 100+ | 15.28 грн |
| 500+ | 10.79 грн |
| 1000+ | 9.64 грн |
| RBR15BGE40ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 15A TO252GE
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 40V 15A TO252GE
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RBR15BGE40ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 15A TO252GE
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Description: DIODE ARR SCHOTT 40V 15A TO252GE
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
на замовлення 2181 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.06 грн |
| 10+ | 121.10 грн |
| 50+ | 92.28 грн |
| 100+ | 77.89 грн |
| 500+ | 62.60 грн |
| RBR10BGE60ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 60V 10A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RBR10BGE60ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 60V 10A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2279 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.93 грн |
| 10+ | 87.50 грн |
| 100+ | 59.17 грн |
| 500+ | 44.14 грн |
| 1000+ | 41.64 грн |
| RBR20BGE40ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 20A TO252GE
Current - Reverse Leakage @ Vr: 360 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 40V 20A TO252GE
Current - Reverse Leakage @ Vr: 360 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RBR20BGE40ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 20A TO252GE
Current - Reverse Leakage @ Vr: 360 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 40V 20A TO252GE
Current - Reverse Leakage @ Vr: 360 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1767 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.23 грн |
| 10+ | 137.82 грн |
| 50+ | 105.54 грн |
| 100+ | 89.29 грн |
| 500+ | 72.17 грн |
| RBR15BGE30ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 15A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 30V 15A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RBR15BGE30ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 15A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 30V 15A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RBR15BGE60ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 15A TO252GE
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 60V 15A TO252GE
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RBR15BGE60ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 15A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 15A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| RBQ10BGE45ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RBQ10BGE45ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 45 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.14 грн |
| 10+ | 86.89 грн |
| RBQ20BGE45ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 20A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RBQ20BGE45ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 20A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 2329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.24 грн |
| 10+ | 121.94 грн |
| 100+ | 97.07 грн |
| 500+ | 77.08 грн |
| 1000+ | 65.40 грн |
| RBQ10BGE65ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Description: DIODE ARR SCHOTT 65V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 38.23 грн |
| RBQ10BGE65ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Description: DIODE ARR SCHOTT 65V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
на замовлення 2527 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.35 грн |
| 10+ | 59.56 грн |
| 100+ | 49.98 грн |
| 500+ | 41.16 грн |
| RBR10BGE30ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE ARR SCHOTT 30V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 39.02 грн |
| RBR10BGE30ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE ARR SCHOTT 30V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 4583 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.15 грн |
| 10+ | 62.84 грн |
| 100+ | 57.66 грн |
| 500+ | 43.14 грн |
| 1000+ | 40.70 грн |
| RBQ15BGE65ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 15A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 140 µA @ 65 V
Description: DIODE ARR SCHOTT 65V 15A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 140 µA @ 65 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 49.55 грн |
| RBQ15BGE65ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 15A TO252GE
Current - Reverse Leakage @ Vr: 140 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 65V 15A TO252GE
Current - Reverse Leakage @ Vr: 140 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 65 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 170.48 грн |
| 10+ | 106.06 грн |
| 100+ | 76.65 грн |
| 500+ | 57.80 грн |
| 1000+ | 57.64 грн |
| RBQ15BGE45ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO252GE
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 45V 15A TO252GE
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RBQ15BGE45ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO252GE
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 15A TO252GE
Current - Reverse Leakage @ Vr: 140 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.96 грн |
| 10+ | 103.39 грн |
| 100+ | 76.65 грн |
| 500+ | 57.80 грн |
| 1000+ | 57.64 грн |
| RFN6BGE2DTL |
![]() |
Виробник: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Description: SUPER FAST RECOVERY DIODE. RFN6B
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 44.06 грн |
| RFN6BGE2DTL |
![]() |
Виробник: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: SUPER FAST RECOVERY DIODE. RFN6B
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.25 грн |
| 10+ | 83.92 грн |
| 100+ | 65.27 грн |
| 500+ | 51.92 грн |
| 1000+ | 42.29 грн |
| RF601BGE2DTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252GE
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Description: DIODE ARRAY GP 200V 3A TO252GE
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RF601BGE2DTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252GE
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 200V 3A TO252GE
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2424 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.84 грн |
| 10+ | 84.91 грн |
| 100+ | 66.09 грн |
| 500+ | 52.57 грн |
| 1000+ | 42.82 грн |
| RB088BGE-40TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 5A TO-252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 5A TO-252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 40 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RB088BGE-40TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 5A TO-252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 5A TO-252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 40 V
на замовлення 1666 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.34 грн |
| 10+ | 100.94 грн |
| 50+ | 76.43 грн |
| 100+ | 64.31 грн |
| 500+ | 51.27 грн |
| RB098BGE-40TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 3A TO-252GE
Description: DIODE ARR SCHOTT 40V 3A TO-252GE
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RB098BGE-40TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 3A TO-252GE
Description: DIODE ARR SCHOTT 40V 3A TO-252GE
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.65 грн |
| 10+ | 107.05 грн |
| 50+ | 81.01 грн |
| 100+ | 68.17 грн |
| 500+ | 54.35 грн |
| RB085BGE-90TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 5A TO-252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARR SCHOTT 90V 5A TO-252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RB085BGE-90TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 5A TO-252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Description: DIODE ARR SCHOTT 90V 5A TO-252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
на замовлення 2430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 175.24 грн |
| 10+ | 108.65 грн |
| 100+ | 74.29 грн |
| 500+ | 55.94 грн |
| 1000+ | 55.43 грн |
| RBR20BGE30ATL |
![]() |
Виробник: Rohm Semiconductor
Description: 30V, 20A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: 30V, 20A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RBR20BGE30ATL |
![]() |
Виробник: Rohm Semiconductor
Description: 30V, 20A, TO-252, CATHODE COMMON
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: 30V, 20A, TO-252, CATHODE COMMON
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.76 грн |
| 10+ | 139.58 грн |
| 100+ | 112.19 грн |
| 500+ | 86.51 грн |
| 1000+ | 71.99 грн |
| RB088BGE-30TL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 5A TO-252GE
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 30V 5A TO-252GE
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RB088BGE-30TL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 5A TO-252GE
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 30V 5A TO-252GE
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1882 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.89 грн |
| 10+ | 104.38 грн |
| 100+ | 71.27 грн |
| 500+ | 53.58 грн |
| 1000+ | 52.63 грн |
| RBQ20BGE65ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 20A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 65V 20A TO252GE
Current - Reverse Leakage @ Vr: 200 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 65 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.


















