Виробник: Huber+Suhner, Inc.
Description: 9076.99.N078-50
Packaging: Bulk
Accessory Type: Grounding Kit

Виробник: HUBER+SUHNER
RF Connector Accessories

Виробник: Huber+Suhner, Inc.
Description: 9076.99.N114-50
Packaging: Bulk

Виробник: Ampleon USA Inc.
Description: RF MOSFET LDMOS 50V SOT539B
Packaging: Tray
Package / Case: SOT-539B
Mounting Type: Surface Mount
Frequency: 600MHz ~ 700MHz
Configuration: Dual, Common Source
Power - Output: 750W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: SOT539B
Voltage - Rated: 104 V
Voltage - Test: 50 V
Current - Test: 600 mA

Виробник: Ampleon USA Inc.
Description: RF MOSFET LDMOS 50V 4HSOPF
Packaging: Cut Tape (CT)
Package / Case: SOT-1223-2
Mounting Type: Surface Mount
Frequency: 108MHz
Configuration: Dual, Common Source
Power - Output: 250W
Gain: 27dB
Technology: LDMOS
Supplier Device Package: 4-HSOPF
Part Status: Obsolete
Voltage - Rated: 135 V
Voltage - Test: 50 V
Current - Test: 100 mA

Виробник: Ampleon USA Inc.
Description: RF MOSFET LDMOS 50V 4HSOPF
Packaging: Tape & Reel (TR)
Package / Case: SOT-1223-2
Mounting Type: Surface Mount
Frequency: 108MHz
Configuration: Dual, Common Source
Power - Output: 250W
Gain: 27dB
Technology: LDMOS
Supplier Device Package: 4-HSOPF
Part Status: Obsolete
Voltage - Rated: 135 V
Voltage - Test: 50 V
Current - Test: 100 mA

Виробник: WeEn Semiconductors
Triacs BTA312G-600CT/I2PAK/STANDARD M

Виробник: ITT Cannon
Circular MIL Spec Connector

Виробник: ITT Cannon
Standard Circular Connector

Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified

Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC

Виробник: TE Connectivity Aerospace, Defense and Marine
Description: CONN MICRO-D PLUG 9POS SLDR CUP
Packaging: Bulk
Connector Type: Plug, Male Pins
Contact Finish: Gold
Current Rating (Amps): 3A
Mounting Type: Free Hanging (In-Line)
Number of Positions: 9
Number of Rows: 2
Contact Type: Signal
Flange Feature: Housing/Shell (Unthreaded)
Termination: Solder Cup
Connector Style: D-Type, Micro-D
Contact Finish Thickness: 50.0µin (1.27µm)
Shell Material, Finish: Plastic
Shell Size, Connector Layout: 0.050 Pitch x 0.050 Row to Row
Part Status: Active

Виробник: WeEn Semiconductors
Triacs OT418/SC-73/REEL 7" Q1/T1 *STA

Виробник: WeEn Semiconductors
Triacs OT419/SIL3P/STANDARD MARKING *

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 85A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7973 pF @ 25 V

Виробник: Nexperia
MOSFET PSMN012-100YL/SOT669/LFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.72mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1334 pF @ 12 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.69mOhm @ 15A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 61A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 61A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V

Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 21.8VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 430pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10.5A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 21.8V
Power - Peak Pulse: 230W
Power Line Protection: No
Part Status: Active

Виробник: TE Connectivity Passive Product
Description: RES 267 OHMS 0.1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±0.1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±10ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thin Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 267 Ohms

Виробник: Amphenol
Plug Female with O-ring Seal and End Cap with Individual Rear Wire Seal 10 Contacts 20AWG 5A/150V Shell Size 12

Виробник: NXP USA Inc.
Description: SL3S1215FUD2/HAPBZ
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 840MHz ~ 960MHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C (TA)
Standards: EPC
Supplier Device Package: Wafer

Виробник: NXP Semiconductors
NFC/RFID Tags & Transponders SL3S1215FUD2/HAP