Виробник: IR
Транзистори > Польові N-канальні
Uds,V: 100 V
Idd,A: 120 A
Rds(on), Ohm: 3,7 mOhm
Ciss, pF/Qg, nC: 9620/150
Монтаж: THT

Виробник: Amphenol FCI
Crimpers / Crimping Tools INSULATION CRMPR

Виробник: Essentra Components
Description: BLACK NYLON 6/6 FIR TREE RIVETS,
Packaging: Bag
Color: Black
Material: Nylon
Hole Diameter: 0.189" (4.80mm)
Type: Barbed Fastener
Head Diameter: 0.469" (11.91mm)
Rivet Length: 0.701" (17.80mm)
Grip Range: 0.098" ~ 0.598" (2.50mm ~ 15.20mm)
Part Status: Active

Виробник: Essentra Components
Description: BLACK NYLON 6/6 FIR TREE RIVETS,
Packaging: Bag
Color: Black
Material: Nylon
Hole Diameter: 0.189" (4.80mm)
Type: Barbed Fastener
Head Diameter: 0.748" (19.00mm)
Rivet Length: 0.480" (12.20mm)
Grip Range: 0.028" ~ 0.315" (0.70mm ~ 8.00mm)
Part Status: Active

Виробник: Essentra Components
Description: BLACK NYLON 6/6 FIR TREE RIVETS,
Packaging: Bag
Color: Black
Material: Nylon
Hole Diameter: 0.161" ~ 0.205" (4.09mm ~ 5.20mm)
Type: Barbed Fastener
Head Diameter: 0.472" (11.99mm)
Rivet Length: 0.236" (5.99mm)
Grip Range: 0.039" ~ 0.098" (0.99mm ~ 2.50mm)
Part Status: Active

Виробник: Essentra
Screws & Fasteners TREE CLIP A=4.1 D=6

Виробник: TE Connectivity
Category: Solar connectors
Description: Connector: solar
Type of connector: solar

Виробник: MOLEX
Category: Raster signal connectors 3,96mm
Description: Wire-board
Type of connector: wire-board

Виробник: Belden Inc.
Description: MDVO BNC COAXIAL MODULE,
Packaging: Bulk

Виробник: Belden Inc.
Description: MDVO VIDEO F COAXIAL
Packaging: Bulk
Part Status: Active

Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.75A; SOD323; reel,tape
Max. off-state voltage: 40V
Max. forward voltage: 0.74V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward impulse current: 8A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323

Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.75A; SOD323; reel,tape
Max. off-state voltage: 40V
Max. forward voltage: 0.74V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward impulse current: 8A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
кількість в упаковці: 1 шт

Виробник: WELLER
Category: Soldering tips
Description: Tip; conical; 0.4mm; for soldering iron,for soldering station
Type of tip: for sold. irons with heating element
Tip shape: conical
Tip dimensions: 0.4mm
Applications of soldering equipment: for soldering iron; for soldering station
Related items: WEL.WD1000; WEL.WD1000T; WEL.WP80; WEL.WSD81; WEL.WSP80

Виробник: WELLER
Category: Soldering tips
Description: Tip; conical; 0.4mm; for soldering iron,for soldering station
Type of tip: for sold. irons with heating element
Tip shape: conical
Tip dimensions: 0.4mm
Applications of soldering equipment: for soldering iron; for soldering station
Related items: WEL.WD1000; WEL.WD1000T; WEL.WP80; WEL.WSD81; WEL.WSP80
кількість в упаковці: 1 шт

Виробник: Weller
Soldering Irons WELLER CONICAL LONG .4MM X 21.0MM

Виробник: Apex Tool Group
Description: TIP SOLDER CONICAL
Packaging: Bulk
For Use With/Related Products: WP80, WSP80
Width: 0.016" (0.40mm)
Tip Shape: Conical
Tip Type: Soldering
Part Status: Active

Виробник: WELLER
Soldering tip; Conical; Tip outside diameter 4,6mm; Tip width 0,4mm; Length 20mm; Iron plated copper; 2,2g; T0054440699 LT-S Weller NL GL.WEL.LT-S
кількість в упаковці: 2 шт

Виробник: HUBER+SUHNER
Antennas Railway Rooftop, Tetra, DVB-T, 2G/3G/4G cellular and WiFi 2.4/5 GHz bands, GPS, 7.5 / 8dBi, vertical polarized; Connectors N, jack (f), TNC, plug (m)

Виробник: Nexperia
Schottky Diodes & Rectifiers 1PS79SB40/SOD523/SC-79

Виробник: OMRON INDUSTRIAL AUTOMATION
Description: OMRON INDUSTRIAL AUTOMATION - A16-12DY - Lampe, A16 Series, A16
tariffCode: 85414100
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Zur Verwendung mit: A16 Series
usEccn: EAR99
Produktpalette: A16
SVHC: No SVHC (17-Dec-2014)

Виробник: Nexperia
Schottky Diodes & Rectifiers BAT165A/SOD323/SOD2

Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 9pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 8 µA @ 40 V

Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 9pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 8 µA @ 40 V

Виробник: Ampleon USA Inc.
Description: RF MOSFET LDMOS 50V SOT539A
Packaging: Tray
Package / Case: SOT-539A
Mounting Type: Chassis Mount
Frequency: 600MHz ~ 700MHz
Configuration: Dual, Common Source
Power - Output: 750W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: SOT539A
Part Status: Active
Voltage - Rated: 104 V
Voltage - Test: 50 V
Current - Test: 600 mA

Виробник: WeEn Semiconductors
Description: TRIAC 600V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V

Виробник: 4CARMEDIA
Category: Car antennas plugs and adapters
Description: Socket; antenna; RAKU II female; straight
Connector variant: straight
Kind of wire: RG58; RG174
Type of car connector: antenna
Connector: socket
Kind of connector: RAKU II female

Виробник: Smiths Interconnect / IDI
Contact Probes .075' CTR 3AMP PROBE 30 DEG SPEAR STEEL

Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 ns
Technology: Schottky
Capacitance @ Vr, F: 24pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 8 µA @ 40 V
Qualification: AEC-Q101

Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 ns
Technology: Schottky
Capacitance @ Vr, F: 24pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 8 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101

Виробник: Nexperia
Schottky Diodes & Rectifiers PMEG4005CEJ/SOD323F/SOD323F

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 62A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V

Виробник: Nexperia
MOSFET PSMN014-80YL/SOT669/LFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 62A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 69A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 69A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V

Виробник: Nexperia
MOSFET PSMN015-100YL/SOT669/LFPAK

Виробник: Nexperia
MOSFET PSMN019-100YL/SOT669/LFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V

Виробник: Nexperia
MOSFET PSMN021-100YL/SOT669/LFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V

Виробник: Nexperia
MOSFET PSMN025-80YL/SOT669/LFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 89.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6721 pF @ 12 V

Виробник: Nexperia
MOSFET PSMN0R9-25YLD/SOT669/LFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 89.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6721 pF @ 12 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 71.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5308 pF @ 12 V

Виробник: Nexperia
MOSFET PSMN1R0-25YLD/SOT669/LFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 71.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5308 pF @ 12 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 60.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4327 pF @ 12 V

Виробник: Nexperia
MOSFET PSMN1R2-25YLD/SOT669/LFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 60.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4327 pF @ 12 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V

Виробник: Nexperia
MOSFET PSMN1R7-25YLD/SOT669/LFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.27mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 34.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 12 V

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.27mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 34.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 12 V

Виробник: Nexperia
MOSFET PSMN2R0-25MLD/SOT1210/mLFPAK

Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.09mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 34.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2485 pF @ 12 V