Продукція > SMC DIODE SOLUTIONS > Всі товари виробника SMC DIODE SOLUTIONS (9725) > Сторінка 157 з 163
Фото | Назва | Виробник | Інформація |
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5.0SMCJ24ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 5kW; 26.7÷29.5V; 129A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 129A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: 5.0SMCJ |
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SDUR1620CT | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; THT; 200V; 8Ax2; tube; TO220AB; Ufmax: 1.2V; 35ns Max. off-state voltage: 200V Max. load current: 16A Max. forward voltage: 1.2V Load current: 8A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Leakage current: 5µA Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Mounting: THT Case: TO220AB |
на замовлення 188 шт: термін постачання 21-30 дні (днів) |
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GBU1006TB | SMC DIODE SOLUTIONS |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 10A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
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ER2DTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.95V Leakage current: 5µA Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
S3D03065ETR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 3A; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 265A Kind of package: reel; tape |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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S3D03065LTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 3A; reel,tape Type of diode: Schottky rectifying Case: DFN8x8 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 265A Kind of package: reel; tape |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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S3D03065I | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 3A; TO220ISO; Ufmax: 2V Type of diode: Schottky rectifying Case: TO220ISO Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 265A Kind of package: tube |
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S3D03065A | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 3A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 265A Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||
S3D03065F | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 3A; ITO220AC; Ufmax: 2V Type of diode: Schottky rectifying Case: ITO220AC Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 2V Max. load current: 14A Max. forward impulse current: 25A Kind of package: tube Power dissipation: 39W |
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В кошику од. на суму грн. | |||||||||||||||||
S3D03065T | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SiC; SMD; 650V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 2V Max. load current: 4A Max. forward impulse current: 9A Kind of package: reel; tape Power dissipation: 6.5W |
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В кошику од. на суму грн. | |||||||||||||||||
MBRD1060TR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 10A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: common anode; single diode Max. forward voltage: 0.8V Kind of package: reel; tape Capacitance: 300pF Max. forward impulse current: 120A Leakage current: 1mA |
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В кошику од. на суму грн. | |||||||||||||||||
MBRF1060 | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AC; Ufmax: 800mV Type of diode: Schottky rectifying Case: ITO220AC Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 150A Kind of package: tube Capacitance: 400pF Leakage current: 1mA |
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В кошику од. на суму грн. | |||||||||||||||||
MBRF1060CTP | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AB; Ufmax: 700mV Type of diode: Schottky rectifying Case: ITO220AB Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.7V Max. forward impulse current: 125A Kind of package: tube Capacitance: 220pF Leakage current: 1mA |
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В кошику од. на суму грн. | |||||||||||||||||
MBRB1060TR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 150A Kind of package: reel; tape Capacitance: 400pF Leakage current: 1mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MBRD1060CTTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 10A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.7V Max. forward impulse current: 125A Kind of package: reel; tape Capacitance: 300pF Leakage current: 1mA |
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В кошику од. на суму грн. | |||||||||||||||||
MBRF1060CT | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AB; Ufmax: 700mV Type of diode: Schottky rectifying Case: ITO220AB Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.7V Max. forward impulse current: 125A Kind of package: tube Capacitance: 220pF Leakage current: 1mA |
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В кошику од. на суму грн. | |||||||||||||||||
MBRF1060CTL | SMC DIODE SOLUTIONS |
![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AB; Ufmax: 600mV Type of diode: Schottky rectifying Case: ITO220AB Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Max. forward impulse current: 125A Kind of package: tube Capacitance: 220pF Leakage current: 1mA |
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В кошику од. на суму грн. | |||||||||||||||||
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S3M0040120D | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Case: TO247-3 Mounting: THT Kind of package: tube Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 130W Polarisation: unipolar Gate charge: 143nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 223A |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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S3M0040120K | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Case: TO247-4 Mounting: THT Kind of package: tube Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 130W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 143nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 223A |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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S3M0040120J-A | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W Case: D2PAK-7 Mounting: SMD Kind of package: tube Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 50mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 600W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 143nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 223A |
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В кошику од. на суму грн. | |||||||||||||||||
S3M0040120J-A | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 50mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 600W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 143nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 223A |
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BAV16WTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 1µA Power dissipation: 0.4W Kind of package: reel; tape |
на замовлення 44864 шт: термін постачання 21-30 дні (днів) |
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GBJ2508TB | SMC DIODE SOLUTIONS |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 0.3kA Electrical mounting: THT Version: flat Max. forward voltage: 1.1V Leads: flat pin Case: GBJ Kind of package: tube |
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SMAJ130ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 144÷159V; 1.9A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 130V Breakdown voltage: 144...159V Max. forward impulse current: 1.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMAJ |
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SMAJ36ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
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SMBJ90ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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FR102GTA | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; THT; 100V; 1A; Ammo Pack; DO41; Ufmax: 1.3V; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: Ammo Pack Case: DO41 Max. forward voltage: 1.3V Reverse recovery time: 150ns Leakage current: 5µA Capacitance: 15pF |
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1.5KE24ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 22.8÷25.2V; 45.8A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20.5V Breakdown voltage: 22.8...25.2V Max. forward impulse current: 45.8A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Manufacturer series: 1.5KE |
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SMCJ6.5CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 134A; bidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 134A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 0.5mA Kind of package: reel Manufacturer series: SMCJ |
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GBJ2506TB | SMC DIODE SOLUTIONS |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 0.3kA Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Case: GBJ |
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В кошику од. на суму грн. | |||||||||||||||||
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SMAJ9.0ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 26A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 10µA Kind of package: reel Manufacturer series: SMAJ |
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В кошику од. на суму грн. | ||||||||||||||||
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SMAJ9.0CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 26A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 10µA Kind of package: reel Manufacturer series: SMAJ |
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В кошику од. на суму грн. | ||||||||||||||||
SMCJ5.0ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 6.4÷7V; 163A; unidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 0.8mA Kind of package: reel Manufacturer series: SMCJ |
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STD1045CTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.5V Max. forward impulse current: 120A Kind of package: reel; tape |
на замовлення 2491 шт: термін постачання 21-30 дні (днів) |
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SB150TA | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 700mV; tape Max. off-state voltage: 50V Max. forward voltage: 0.7V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 0.5mA Kind of package: tape Type of diode: Schottky rectifying Mounting: THT Case: DO41 Capacitance: 80pF |
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SDURB1060TR | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; SMD; 600V; 10A; 32ns; D2PAK; Ufmax: 2.2V; Ir: 10uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 2.2V Leakage current: 10µA Kind of package: reel; tape |
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113CNQ100SM | SMC DIODE SOLUTIONS |
![]() Description: Module: diode; double,common cathode; 100V; If: 55Ax2; PRM2-SM Case: PRM2-SM Kind of package: bulk Electrical mounting: THT Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Max. off-state voltage: 100V Max. load current: 110A Load current: 55A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 720A |
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113CNQ100 | SMC DIODE SOLUTIONS |
![]() Description: Module: diode; double,common cathode; 100V; If: 55Ax2; PRM2; THT Case: PRM2 Kind of package: bulk Electrical mounting: THT Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Max. off-state voltage: 100V Max. load current: 110A Load current: 55A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 720A |
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113CNQ100SL | SMC DIODE SOLUTIONS |
![]() Description: Module: diode; double,common cathode; 100V; If: 55Ax2; PRM2-SL Case: PRM2-SL Kind of package: bulk Electrical mounting: SMT Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Max. off-state voltage: 100V Max. load current: 110A Load current: 55A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 720A |
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В кошику од. на суму грн. | |||||||||||||||||
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S1M1000170K | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W Drain-source voltage: 1.7kV Drain current: 3.7A On-state resistance: 1.9Ω Type of transistor: N-MOSFET Power dissipation: 81W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 10nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 15A Mounting: THT Case: TO247-4 |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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1.5KE10ATA | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 9.5÷10.5V; 104.8A; unidirectional; DO201AD; tape Manufacturer series: 1.5KE Max. forward impulse current: 104.8A Breakdown voltage: 9.5...10.5V Leakage current: 10µA Kind of package: tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO201AD Max. off-state voltage: 8.55V Semiconductor structure: unidirectional |
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В кошику од. на суму грн. | |||||||||||||||||
1.5KE10ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 9.5÷10.5V; 104.8A; unidirectional; DO201AD; reel Manufacturer series: 1.5KE Max. forward impulse current: 104.8A Breakdown voltage: 9.5...10.5V Leakage current: 10µA Kind of package: reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO201AD Max. off-state voltage: 8.55V Semiconductor structure: unidirectional |
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TPK15KP45A | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 15kW; 50÷55.3V; 207A; unidirectional; SPD4; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 207A Semiconductor structure: unidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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TPK15KP45CA | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 15kW; 50÷55.3V; 207A; bidirectional; SPD4; bulk; TPK15KP Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 207A Semiconductor structure: bidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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В кошику од. на суму грн. | |||||||||||||||||
MBRB3045CTTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 30A Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward voltage: 0.65V Capacitance: 900pF Leakage current: 0.2mA Max. forward impulse current: 0.24kA |
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SMBJ14ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 25.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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MBRB40200CTTR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 40A; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 200V Type of diode: Schottky rectifying Max. forward voltage: 0.9V Load current: 40A Semiconductor structure: common cathode; double Max. forward impulse current: 396A Leakage current: 1mA Capacitance: 450pF |
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MBRB40150CTTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 40A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 150V Load current: 40A Semiconductor structure: common cathode; double Kind of package: reel; tape Capacitance: 900pF Max. forward voltage: 0.95V Max. forward impulse current: 250A Leakage current: 1mA |
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BAV19WSTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 0.25W Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Leakage current: 0.1µA Power dissipation: 0.25W Kind of package: reel; tape |
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16CTQ080 | SMC DIODE SOLUTIONS |
![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 80V; 16A; TO220AB; Ufmax: 880mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 80V Load current: 16A Semiconductor structure: common cathode; double Kind of package: tube Capacitance: 500pF Leakage current: 0.55mA Max. forward impulse current: 280A Max. forward voltage: 0.88V |
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123SPC100A | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SPD3A; SMD; 100V; 120A; bulk Type of diode: Schottky rectifying Mounting: SMD Kind of package: bulk Case: SPD3A Semiconductor structure: single diode Capacitance: 3nF Max. off-state voltage: 100V Max. forward voltage: 0.87V Load current: 120A Max. forward impulse current: 1.65kA Leakage current: 2mA |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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63SPB100A | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SPD2A; SMD; 100V; 60A; bulk Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 60A Semiconductor structure: single diode Case: SPD2A Max. forward voltage: 0.87V Max. forward impulse current: 860A Kind of package: bulk Capacitance: 1.5nF Leakage current: 1mA |
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63SPD100A | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SPD4; SMD; 100V; 60A; bulk Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 60A Semiconductor structure: single diode Case: SPD4 Max. forward voltage: 0.87V Max. forward impulse current: 860A Kind of package: bulk Capacitance: 1.5nF Leakage current: 1mA |
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123SPD100A | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SPD4; SMD; 100V; 120A; bulk Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 120A Semiconductor structure: single diode Case: SPD4 Max. forward voltage: 0.87V Max. forward impulse current: 1.65kA Kind of package: bulk Capacitance: 3nF Leakage current: 2mA |
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SMAJ24ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
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RL201GTA | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; THT; 50V; 2A; Ammo Pack; DO15; Ufmax: 1.1V; Ir: 5uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Capacitance: 20pF Kind of package: Ammo Pack Case: DO15 Max. forward voltage: 1.1V Leakage current: 5µA |
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SMAJ70ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
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SMAJ170ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 189÷209V; 1.5A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 1.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
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P4SMF45A | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SOD123F; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel Manufacturer series: P4SMF |
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P4SMF6.5A | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 33.1A; unidirectional; SOD123F; reel Type of diode: TVS Case: SOD123F Max. off-state voltage: 6.5V Semiconductor structure: unidirectional Max. forward impulse current: 33.1A Breakdown voltage: 7.22...7.98V Leakage current: 0.5mA Kind of package: reel Manufacturer series: P4SMF Peak pulse power dissipation: 0.4kW Mounting: SMD |
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5.0SMCJ24ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 26.7÷29.5V; 129A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 129A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 26.7÷29.5V; 129A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 129A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
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SDUR1620CT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; TO220AB; Ufmax: 1.2V; 35ns
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 1.2V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Leakage current: 5µA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO220AB
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; TO220AB; Ufmax: 1.2V; 35ns
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 1.2V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Leakage current: 5µA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO220AB
на замовлення 188 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 52.32 грн |
12+ | 32.59 грн |
39+ | 22.95 грн |
107+ | 21.75 грн |
GBU1006TB |
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Виробник: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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ER2DTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
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S3D03065ETR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 265A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 265A
Kind of package: reel; tape
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.06 грн |
10+ | 61.30 грн |
19+ | 47.84 грн |
52+ | 44.85 грн |
S3D03065LTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 265A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 265A
Kind of package: reel; tape
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 107.06 грн |
10+ | 87.46 грн |
14+ | 68.77 грн |
36+ | 65.03 грн |
S3D03065I |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 3A; TO220ISO; Ufmax: 2V
Type of diode: Schottky rectifying
Case: TO220ISO
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 265A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 3A; TO220ISO; Ufmax: 2V
Type of diode: Schottky rectifying
Case: TO220ISO
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 265A
Kind of package: tube
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S3D03065A |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 3A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 265A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 3A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 265A
Kind of package: tube
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S3D03065F |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 3A; ITO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Case: ITO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 14A
Max. forward impulse current: 25A
Kind of package: tube
Power dissipation: 39W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 3A; ITO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Case: ITO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 14A
Max. forward impulse current: 25A
Kind of package: tube
Power dissipation: 39W
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S3D03065T |
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SiC; SMD; 650V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 4A
Max. forward impulse current: 9A
Kind of package: reel; tape
Power dissipation: 6.5W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SiC; SMD; 650V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. load current: 4A
Max. forward impulse current: 9A
Kind of package: reel; tape
Power dissipation: 6.5W
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MBRD1060TR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common anode; single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 300pF
Max. forward impulse current: 120A
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common anode; single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 300pF
Max. forward impulse current: 120A
Leakage current: 1mA
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MBRF1060 |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Case: ITO220AC
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: tube
Capacitance: 400pF
Leakage current: 1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Case: ITO220AC
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: tube
Capacitance: 400pF
Leakage current: 1mA
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MBRF1060CTP |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AB; Ufmax: 700mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 125A
Kind of package: tube
Capacitance: 220pF
Leakage current: 1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AB; Ufmax: 700mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 125A
Kind of package: tube
Capacitance: 220pF
Leakage current: 1mA
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MBRB1060TR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: reel; tape
Capacitance: 400pF
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: reel; tape
Capacitance: 400pF
Leakage current: 1mA
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MBRD1060CTTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 125A
Kind of package: reel; tape
Capacitance: 300pF
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 125A
Kind of package: reel; tape
Capacitance: 300pF
Leakage current: 1mA
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MBRF1060CT |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AB; Ufmax: 700mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 125A
Kind of package: tube
Capacitance: 220pF
Leakage current: 1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AB; Ufmax: 700mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 125A
Kind of package: tube
Capacitance: 220pF
Leakage current: 1mA
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MBRF1060CTL |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AB; Ufmax: 600mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 125A
Kind of package: tube
Capacitance: 220pF
Leakage current: 1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AB; Ufmax: 600mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 125A
Kind of package: tube
Capacitance: 220pF
Leakage current: 1mA
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S3M0040120D |
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Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 405.72 грн |
3+ | 339.36 грн |
4+ | 294.52 грн |
S3M0040120K |
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Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Case: TO247-4
Mounting: THT
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Case: TO247-4
Mounting: THT
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 436.31 грн |
3+ | 316.94 грн |
8+ | 299.75 грн |
30+ | 290.03 грн |
S3M0040120J-A |
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W
Case: D2PAK-7
Mounting: SMD
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 600W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W
Case: D2PAK-7
Mounting: SMD
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 600W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
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S3M0040120J-A |
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 600W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 600W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
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BAV16WTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 1µA
Power dissipation: 0.4W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 1µA
Power dissipation: 0.4W
Kind of package: reel; tape
на замовлення 44864 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
111+ | 3.63 грн |
148+ | 2.54 грн |
164+ | 2.29 грн |
250+ | 1.92 грн |
500+ | 1.73 грн |
642+ | 1.40 грн |
1764+ | 1.32 грн |
30000+ | 1.29 грн |
GBJ2508TB |
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Виробник: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
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SMAJ130ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1.9A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1.9A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
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SMAJ36ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
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SMBJ90ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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FR102GTA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ammo Pack; DO41; Ufmax: 1.3V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Case: DO41
Max. forward voltage: 1.3V
Reverse recovery time: 150ns
Leakage current: 5µA
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ammo Pack; DO41; Ufmax: 1.3V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Case: DO41
Max. forward voltage: 1.3V
Reverse recovery time: 150ns
Leakage current: 5µA
Capacitance: 15pF
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1.5KE24ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22.8÷25.2V; 45.8A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 45.8A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22.8÷25.2V; 45.8A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 45.8A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
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SMCJ6.5CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 134A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 134A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.22÷7.98V; 134A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 134A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel
Manufacturer series: SMCJ
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GBJ2506TB |
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Виробник: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Case: GBJ
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Case: GBJ
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SMAJ9.0ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel
Manufacturer series: SMAJ
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SMAJ9.0CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel
Manufacturer series: SMAJ
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SMCJ5.0ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 163A; unidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 163A; unidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel
Manufacturer series: SMCJ
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STD1045CTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.5V
Max. forward impulse current: 120A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.5V
Max. forward impulse current: 120A
Kind of package: reel; tape
на замовлення 2491 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 52.32 грн |
16+ | 23.62 грн |
25+ | 17.79 грн |
64+ | 14.20 грн |
174+ | 13.38 грн |
SB150TA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 700mV; tape
Max. off-state voltage: 50V
Max. forward voltage: 0.7V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.5mA
Kind of package: tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
Capacitance: 80pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 700mV; tape
Max. off-state voltage: 50V
Max. forward voltage: 0.7V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.5mA
Kind of package: tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
Capacitance: 80pF
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SDURB1060TR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 32ns; D2PAK; Ufmax: 2.2V; Ir: 10uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 2.2V
Leakage current: 10µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 32ns; D2PAK; Ufmax: 2.2V; Ir: 10uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 2.2V
Leakage current: 10µA
Kind of package: reel; tape
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113CNQ100SM |
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Виробник: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 55Ax2; PRM2-SM
Case: PRM2-SM
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 100V
Max. load current: 110A
Load current: 55A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 720A
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 55Ax2; PRM2-SM
Case: PRM2-SM
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 100V
Max. load current: 110A
Load current: 55A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 720A
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113CNQ100 |
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Виробник: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 55Ax2; PRM2; THT
Case: PRM2
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 100V
Max. load current: 110A
Load current: 55A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 720A
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 55Ax2; PRM2; THT
Case: PRM2
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 100V
Max. load current: 110A
Load current: 55A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 720A
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113CNQ100SL |
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Виробник: SMC DIODE SOLUTIONS
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 55Ax2; PRM2-SL
Case: PRM2-SL
Kind of package: bulk
Electrical mounting: SMT
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 100V
Max. load current: 110A
Load current: 55A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 720A
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 55Ax2; PRM2-SL
Case: PRM2-SL
Kind of package: bulk
Electrical mounting: SMT
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 100V
Max. load current: 110A
Load current: 55A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 720A
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S1M1000170K |
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Drain-source voltage: 1.7kV
Drain current: 3.7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 81W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 10nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 15A
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 15A; 81W
Drain-source voltage: 1.7kV
Drain current: 3.7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 81W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 10nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 15A
Mounting: THT
Case: TO247-4
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 135.30 грн |
8+ | 121.10 грн |
10+ | 119.60 грн |
21+ | 114.37 грн |
1.5KE10ATA |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 9.5÷10.5V; 104.8A; unidirectional; DO201AD; tape
Manufacturer series: 1.5KE
Max. forward impulse current: 104.8A
Breakdown voltage: 9.5...10.5V
Leakage current: 10µA
Kind of package: tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO201AD
Max. off-state voltage: 8.55V
Semiconductor structure: unidirectional
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 9.5÷10.5V; 104.8A; unidirectional; DO201AD; tape
Manufacturer series: 1.5KE
Max. forward impulse current: 104.8A
Breakdown voltage: 9.5...10.5V
Leakage current: 10µA
Kind of package: tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO201AD
Max. off-state voltage: 8.55V
Semiconductor structure: unidirectional
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1.5KE10ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 9.5÷10.5V; 104.8A; unidirectional; DO201AD; reel
Manufacturer series: 1.5KE
Max. forward impulse current: 104.8A
Breakdown voltage: 9.5...10.5V
Leakage current: 10µA
Kind of package: reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO201AD
Max. off-state voltage: 8.55V
Semiconductor structure: unidirectional
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 9.5÷10.5V; 104.8A; unidirectional; DO201AD; reel
Manufacturer series: 1.5KE
Max. forward impulse current: 104.8A
Breakdown voltage: 9.5...10.5V
Leakage current: 10µA
Kind of package: reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO201AD
Max. off-state voltage: 8.55V
Semiconductor structure: unidirectional
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TPK15KP45A |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 50÷55.3V; 207A; unidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 207A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 50÷55.3V; 207A; unidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 207A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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TPK15KP45CA |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 50÷55.3V; 207A; bidirectional; SPD4; bulk; TPK15KP
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 207A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 50÷55.3V; 207A; bidirectional; SPD4; bulk; TPK15KP
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 207A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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MBRB3045CTTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.65V
Capacitance: 900pF
Leakage current: 0.2mA
Max. forward impulse current: 0.24kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.65V
Capacitance: 900pF
Leakage current: 0.2mA
Max. forward impulse current: 0.24kA
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SMBJ14ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.2V; 25.9A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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MBRB40200CTTR |
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 40A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Type of diode: Schottky rectifying
Max. forward voltage: 0.9V
Load current: 40A
Semiconductor structure: common cathode; double
Max. forward impulse current: 396A
Leakage current: 1mA
Capacitance: 450pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 40A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Type of diode: Schottky rectifying
Max. forward voltage: 0.9V
Load current: 40A
Semiconductor structure: common cathode; double
Max. forward impulse current: 396A
Leakage current: 1mA
Capacitance: 450pF
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MBRB40150CTTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 40A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 40A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Capacitance: 900pF
Max. forward voltage: 0.95V
Max. forward impulse current: 250A
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 40A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 40A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Capacitance: 900pF
Max. forward voltage: 0.95V
Max. forward impulse current: 250A
Leakage current: 1mA
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BAV19WSTR |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Leakage current: 0.1µA
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Leakage current: 0.1µA
Power dissipation: 0.25W
Kind of package: reel; tape
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16CTQ080 | ![]() |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 16A; TO220AB; Ufmax: 880mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 80V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Capacitance: 500pF
Leakage current: 0.55mA
Max. forward impulse current: 280A
Max. forward voltage: 0.88V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 16A; TO220AB; Ufmax: 880mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 80V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Capacitance: 500pF
Leakage current: 0.55mA
Max. forward impulse current: 280A
Max. forward voltage: 0.88V
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123SPC100A |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SPD3A; SMD; 100V; 120A; bulk
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: bulk
Case: SPD3A
Semiconductor structure: single diode
Capacitance: 3nF
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 120A
Max. forward impulse current: 1.65kA
Leakage current: 2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SPD3A; SMD; 100V; 120A; bulk
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: bulk
Case: SPD3A
Semiconductor structure: single diode
Capacitance: 3nF
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 120A
Max. forward impulse current: 1.65kA
Leakage current: 2mA
на замовлення 86 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 868.60 грн |
2+ | 593.52 грн |
5+ | 561.37 грн |
63SPB100A |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SPD2A; SMD; 100V; 60A; bulk
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 60A
Semiconductor structure: single diode
Case: SPD2A
Max. forward voltage: 0.87V
Max. forward impulse current: 860A
Kind of package: bulk
Capacitance: 1.5nF
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SPD2A; SMD; 100V; 60A; bulk
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 60A
Semiconductor structure: single diode
Case: SPD2A
Max. forward voltage: 0.87V
Max. forward impulse current: 860A
Kind of package: bulk
Capacitance: 1.5nF
Leakage current: 1mA
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63SPD100A |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SPD4; SMD; 100V; 60A; bulk
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 60A
Semiconductor structure: single diode
Case: SPD4
Max. forward voltage: 0.87V
Max. forward impulse current: 860A
Kind of package: bulk
Capacitance: 1.5nF
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SPD4; SMD; 100V; 60A; bulk
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 60A
Semiconductor structure: single diode
Case: SPD4
Max. forward voltage: 0.87V
Max. forward impulse current: 860A
Kind of package: bulk
Capacitance: 1.5nF
Leakage current: 1mA
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123SPD100A |
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Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SPD4; SMD; 100V; 120A; bulk
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 120A
Semiconductor structure: single diode
Case: SPD4
Max. forward voltage: 0.87V
Max. forward impulse current: 1.65kA
Kind of package: bulk
Capacitance: 3nF
Leakage current: 2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SPD4; SMD; 100V; 120A; bulk
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 120A
Semiconductor structure: single diode
Case: SPD4
Max. forward voltage: 0.87V
Max. forward impulse current: 1.65kA
Kind of package: bulk
Capacitance: 3nF
Leakage current: 2mA
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SMAJ24ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
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RL201GTA |
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Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2A; Ammo Pack; DO15; Ufmax: 1.1V; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 20pF
Kind of package: Ammo Pack
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 5µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2A; Ammo Pack; DO15; Ufmax: 1.1V; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 20pF
Kind of package: Ammo Pack
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 5µA
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SMAJ70ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
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SMAJ170ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189÷209V; 1.5A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 1.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189÷209V; 1.5A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 1.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
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P4SMF45A |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel
Manufacturer series: P4SMF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel
Manufacturer series: P4SMF
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В кошику
од. на суму грн.
P4SMF6.5A |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 33.1A; unidirectional; SOD123F; reel
Type of diode: TVS
Case: SOD123F
Max. off-state voltage: 6.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 33.1A
Breakdown voltage: 7.22...7.98V
Leakage current: 0.5mA
Kind of package: reel
Manufacturer series: P4SMF
Peak pulse power dissipation: 0.4kW
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 33.1A; unidirectional; SOD123F; reel
Type of diode: TVS
Case: SOD123F
Max. off-state voltage: 6.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 33.1A
Breakdown voltage: 7.22...7.98V
Leakage current: 0.5mA
Kind of package: reel
Manufacturer series: P4SMF
Peak pulse power dissipation: 0.4kW
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.