Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162748) > Сторінка 235 з 2713

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STM8/128-D/RAIS STM8/128-D/RAIS STMicroelectronics ST%28M8%2C7%29-%28D%2CSK%29RAIS.pdf Description: BOARD DAUGHTER FOR STM8S207/8
Packaging: Box
For Use With/Related Products: Raisonance REva Starter Kits, STM8S20x
Accessory Type: Daughter Board
Utilized IC / Part: Raisonance REva Starter Kits, STM8S20x
товару немає в наявності
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STR9-COMSTICK STMicroelectronics en.CD00155816.pdf Description: KIT EVAL/DEV STR91XF
товару немає в наявності
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STR79-RVDK/9 STMicroelectronics CD00133191.pdf Description: KIT DEV RVDK STR7 TO RVDK STR7/9
товару немає в наявності
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STR79-RVDKCPP/9 STMicroelectronics CD00133191.pdf Description: KIT DEV UPGRADE RVDK STR7/9 C++
товару немає в наявності
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ST7FLITU0-D/RAIS STMicroelectronics ST(M8,7)-(D,SK)RAIS.pdf Description: BOARD DAUGHTER STNDAL ST7FLITEU0
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ST7FOXA0-D/RAIS STMicroelectronics ST(M8,7)-(D,SK)RAIS.pdf Description: BOARD DAUGHTER STANDALON STFOXA0
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ST72325-D/RAIS STMicroelectronics ST%28M8%2C7%29-%28D%2CSK%29RAIS.pdf Description: BOARD DAUGHTER WITH ST72325
Packaging: Box
For Use With/Related Products: ST7232X-SK/RAIS, ST72F325AR9
Accessory Type: Daughter Board
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ST72321B-D/RAIS STMicroelectronics ST%28M8%2C7%29-%28D%2CSK%29RAIS.pdf Description: BOARD DAUGHTER WITH ST72321
Packaging: Box
For Use With/Related Products: ST7232X-SK/RAIS, ST72F321BAR9
Accessory Type: Daughter Board
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ST7FLI49-D/RAIS STMicroelectronics ST(M8,7)-(D,SK)RAIS.pdf Description: BOARD DAUGHTER 32LQFP ST7FLITE4
товару немає в наявності
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STR79-RVDK/UPG STMicroelectronics CD00133191.pdf Description: KIT UPGRADE RVDK BASIC TO FULL
товару немає в наявності
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BUL128FP STMicroelectronics BUL128FP.pdf Description: TRANS NPN 400V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 31 W
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STWH13009 STWH13009 STMicroelectronics Description: TRANS NPN 400V 12A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2.4A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 5A, 5V
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 125 W
товару немає в наявності
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BUL1203E BUL1203E STMicroelectronics BUL1203E.pdf Description: TRANS NPN 550V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 2A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 550 V
Power - Max: 100 W
на замовлення 863 шт:
термін постачання 21-31 дні (днів)
2+175.77 грн
50+82.57 грн
100+74.13 грн
500+55.66 грн
Мінімальне замовлення: 2
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BULT118M BULT118M STMicroelectronics CD00003551.pdf Description: TRANS NPN 400V 2A SOT-32
товару немає в наявності
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BULK128 BULK128 STMicroelectronics bulk128.pdf Description: TRANS NPN 400V 4A SOT-82-3
Packaging: Tube
Package / Case: SOT-82
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: SOT-82-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 55 W
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BUL128-K BUL128-K STMicroelectronics BUL128.pdf Description: TRANS NPN 400V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
товару немає в наявності
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2STP535FP 2STP535FP STMicroelectronics en.CD00244882.pdf Description: TRANS NPN DARL 180V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 37 W
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
3+156.81 грн
50+80.46 грн
100+73.10 грн
500+56.26 грн
Мінімальне замовлення: 3
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2STN2540-A 2STN2540-A STMicroelectronics 2STN2540-A.pdf Description: TRANS PNP 40V 5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.6 W
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PD55025TR-E PD55025TR-E STMicroelectronics en.CD00108676.pdf Description: RF MOSFET LDMOS 12.5V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 500MHz
Power - Output: 25W
Gain: 14.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Active
Voltage - Rated: 40 V
Voltage - Test: 12.5 V
Current - Test: 200 mA
товару немає в наявності
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PD85025TR-E PD85025TR-E STMicroelectronics steval-tdr022v1.pdf Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
товару немає в наявності
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PD85025STR-E PD85025STR-E STMicroelectronics steval-tdr022v1.pdf Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
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PD20015C PD20015C STMicroelectronics PD20015C.pdf Description: RF MOSFET LDMOS 13.6V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 7A
Frequency: 2GHz
Power - Output: 15W
Gain: 11dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+5167.98 грн
10+4675.48 грн
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PD84010S-E PD84010S-E STMicroelectronics en.CD00167351.pdf Description: RF MOSFET LDMOS 7.5V PWRSO-10RF
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 8A
Frequency: 870MHz
Power - Output: 2W
Gain: 16.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 40 V
Voltage - Test: 7.5 V
Current - Test: 300 mA
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PD85025C PD85025C STMicroelectronics PD85025C.pdf Description: FET RF 40V 945MHZ M243
товару немає в наявності
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PD85015TR-E PD85015TR-E STMicroelectronics CD00185996.pdf Description: TRANS RF N-CH FET POWERSO-10RF
товару немає в наявності
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PD55015TR-E PD55015TR-E STMicroelectronics en.CD00128612.pdf Description: RF MOSFET LDMOS 12.5V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 5A
Frequency: 500MHz
Power - Output: 15W
Gain: 14dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 12.5 V
Current - Test: 150 mA
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
600+1105.98 грн
Мінімальне замовлення: 600
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ST26025A ST26025A STMicroelectronics ST26025A.pdf Description: TRANS PNP DARL 100V 20A TO-3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: PNP - Darlington
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
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PD20010S-E PD20010S-E STMicroelectronics en.CD00228754.pdf Description: TRANS RF N-CH FET POWERSO-10RF
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ST5027 ST5027 STMicroelectronics Power%20Bipolar%20Transistors.pdf Description: TRANS NPN 800V 3A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 90 W
товару немає в наявності
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PD20015-E PD20015-E STMicroelectronics Description: TRANS RF PWR N-CH POWERSO-10RF
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PD20015S-E PD20015S-E STMicroelectronics en.CD00173496.pdf Description: TRANS RF N-CH FET POWERSO-10RF
товару немає в наявності
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SD2931-11 SD2931-11 STMicroelectronics SD2931-11.pdf Description: RF MOSFET 50V M246
Packaging: Box
Package / Case: M246
Current Rating (Amps): 20A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M246
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 250 mA
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PD57006STR-E PD57006STR-E STMicroelectronics PD57006%28S%29-E.pdf Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 1A
Frequency: 945MHz
Power - Output: 6W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 70 mA
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PD85035C PD85035C STMicroelectronics en.CD00176191.pdf Description: FET RF 40V 945MHZ M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 8A
Frequency: 945MHz
Power - Output: 15W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
товару немає в наявності
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START499D START499D STMicroelectronics CD00187074.pdf Description: TRANS RF NPN 4.5V 1A SOT-89
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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PD54003S-E PD54003S-E STMicroelectronics en.CD00100209.pdf Description: RF MOSFET LDMOS 7.5V PWRSO-10RF
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 4A
Frequency: 500MHz
Power - Output: 3W
Gain: 12dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 25 V
Voltage - Test: 7.5 V
Current - Test: 50 mA
товару немає в наявності
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PD85035TR-E PD85035TR-E STMicroelectronics en.CD00162008.pdf Description: TRANS RF N-CH FET POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 8A
Frequency: 870MHz
Power - Output: 15W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Active
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
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PD20010-E PD20010-E STMicroelectronics radio-frequency-transistors.html Description: TRANS RF N-CH FET POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 5A
Frequency: 2GHz
Power - Output: 10W
Gain: 11dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 150 mA
товару немає в наявності
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P0115DA 1AA3 P0115DA 1AA3 STMicroelectronics CD00217835.pdf Description: IC SCR 0.8A 400V TO-92
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BTB06-800SWRG BTB06-800SWRG STMicroelectronics bta06.pdf Description: TRIAC ALTERNISTOR 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
товару немає в наявності
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STF30NM60N STF30NM60N STMicroelectronics en.CD00174866.pdf Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
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STI21NM60ND STI21NM60ND STMicroelectronics STx21NM60ND_Rev3.pdf Description: MOSFET N-CH 600V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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STP6NK90ZFP STP6NK90ZFP STMicroelectronics en.CD00003175.pdf description Description: MOSFET N-CH 900V 5.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 60.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
2+298.12 грн
50+146.33 грн
100+132.66 грн
500+102.04 грн
Мінімальне замовлення: 2
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STP7NK80ZFP STP7NK80ZFP STMicroelectronics en.CD00003046.pdf description Description: MOSFET N-CH 800V 5.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
2+287.78 грн
50+140.73 грн
100+127.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STD17NF03L-1 STD17NF03L-1 STMicroelectronics STD17NF03L%28-1%29.pdf Description: MOSFET N-CH 30V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
товару немає в наявності
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STD70N02L-1 STD70N02L-1 STMicroelectronics en.CD00067209.pdf Description: MOSFET N-CH 25V 60A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 16 V
товару немає в наявності
В кошику  од. на суму  грн.
STB7NK80Z-1 STB7NK80Z-1 STMicroelectronics en.CD00003046.pdf Description: MOSFET N-CH 800V 5.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP9NK70ZFP STP9NK70ZFP STMicroelectronics en.CD00002909.pdf Description: MOSFET N-CH 700V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
на замовлення 984 шт:
термін постачання 21-31 дні (днів)
2+322.24 грн
50+159.25 грн
100+144.60 грн
500+111.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF6N62K3 STF6N62K3 STMicroelectronics en.CD00195598.pdf Description: MOSFET N-CH 620V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.28Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)
2+189.56 грн
50+89.67 грн
100+80.62 грн
500+60.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STD2NC45-1 STD2NC45-1 STMicroelectronics en.CD00003138.pdf Description: MOSFET N-CH 450V 1.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 664 шт:
термін постачання 21-31 дні (днів)
3+120.63 грн
75+51.61 грн
150+46.19 грн
525+36.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF60N55F3 STF60N55F3 STMicroelectronics en.CD00152203.pdf Description: MOSFET N-CH 55V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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STF30NM60ND STF30NM60ND STMicroelectronics en.CD00174884.pdf Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
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STD2NK60Z-1 STD2NK60Z-1 STMicroelectronics en.CD00003700.pdf Description: MOSFET N-CH 600V 1.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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STF6NK70Z STF6NK70Z STMicroelectronics en.CD00043979.pdf Description: MOSFET N-CH 700V 5A TO220FP
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STP9NK50ZFP STP9NK50ZFP STMicroelectronics en.CD00002970.pdf Description: MOSFET N-CH 500V 7.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
2+211.10 грн
50+100.71 грн
100+90.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP75NF68 STP75NF68 STMicroelectronics en.CD00205590.pdf Description: MOSFET N-CH 68V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
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STF6NM60N STF6NM60N STMicroelectronics en.CD00157375.pdf Description: MOSFET N-CH 600V 4.6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
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STD1NK60-1 STD1NK60-1 STMicroelectronics std1nk60-1.pdf Description: MOSFET N-CH 600V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
на замовлення 1817 шт:
термін постачання 21-31 дні (днів)
3+122.35 грн
75+52.03 грн
150+46.57 грн
525+36.43 грн
1050+33.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF2HNK60Z STF2HNK60Z STMicroelectronics stf2hnk60z.pdf Description: MOSFET N-CH 600V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 670 шт:
термін постачання 21-31 дні (днів)
3+171.46 грн
50+80.08 грн
100+71.85 грн
500+53.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF2NK60Z STF2NK60Z STMicroelectronics en.CD00003700.pdf Description: MOSFET N-CH 600V 1.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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STM8/128-D/RAIS ST%28M8%2C7%29-%28D%2CSK%29RAIS.pdf
STM8/128-D/RAIS
Виробник: STMicroelectronics
Description: BOARD DAUGHTER FOR STM8S207/8
Packaging: Box
For Use With/Related Products: Raisonance REva Starter Kits, STM8S20x
Accessory Type: Daughter Board
Utilized IC / Part: Raisonance REva Starter Kits, STM8S20x
товару немає в наявності
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STR9-COMSTICK en.CD00155816.pdf
Виробник: STMicroelectronics
Description: KIT EVAL/DEV STR91XF
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STR79-RVDK/9 CD00133191.pdf
Виробник: STMicroelectronics
Description: KIT DEV RVDK STR7 TO RVDK STR7/9
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STR79-RVDKCPP/9 CD00133191.pdf
Виробник: STMicroelectronics
Description: KIT DEV UPGRADE RVDK STR7/9 C++
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ST7FLITU0-D/RAIS ST(M8,7)-(D,SK)RAIS.pdf
Виробник: STMicroelectronics
Description: BOARD DAUGHTER STNDAL ST7FLITEU0
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ST7FOXA0-D/RAIS ST(M8,7)-(D,SK)RAIS.pdf
Виробник: STMicroelectronics
Description: BOARD DAUGHTER STANDALON STFOXA0
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ST72325-D/RAIS ST%28M8%2C7%29-%28D%2CSK%29RAIS.pdf
Виробник: STMicroelectronics
Description: BOARD DAUGHTER WITH ST72325
Packaging: Box
For Use With/Related Products: ST7232X-SK/RAIS, ST72F325AR9
Accessory Type: Daughter Board
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ST72321B-D/RAIS ST%28M8%2C7%29-%28D%2CSK%29RAIS.pdf
Виробник: STMicroelectronics
Description: BOARD DAUGHTER WITH ST72321
Packaging: Box
For Use With/Related Products: ST7232X-SK/RAIS, ST72F321BAR9
Accessory Type: Daughter Board
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ST7FLI49-D/RAIS ST(M8,7)-(D,SK)RAIS.pdf
Виробник: STMicroelectronics
Description: BOARD DAUGHTER 32LQFP ST7FLITE4
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STR79-RVDK/UPG CD00133191.pdf
Виробник: STMicroelectronics
Description: KIT UPGRADE RVDK BASIC TO FULL
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BUL128FP BUL128FP.pdf
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 31 W
товару немає в наявності
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STWH13009
STWH13009
Виробник: STMicroelectronics
Description: TRANS NPN 400V 12A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2.4A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 5A, 5V
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 125 W
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BUL1203E BUL1203E.pdf
BUL1203E
Виробник: STMicroelectronics
Description: TRANS NPN 550V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 2A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 550 V
Power - Max: 100 W
на замовлення 863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.77 грн
50+82.57 грн
100+74.13 грн
500+55.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BULT118M CD00003551.pdf
BULT118M
Виробник: STMicroelectronics
Description: TRANS NPN 400V 2A SOT-32
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BULK128 bulk128.pdf
BULK128
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A SOT-82-3
Packaging: Tube
Package / Case: SOT-82
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: SOT-82-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 55 W
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BUL128-K BUL128.pdf
BUL128-K
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
товару немає в наявності
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2STP535FP en.CD00244882.pdf
2STP535FP
Виробник: STMicroelectronics
Description: TRANS NPN DARL 180V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 37 W
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+156.81 грн
50+80.46 грн
100+73.10 грн
500+56.26 грн
Мінімальне замовлення: 3
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2STN2540-A 2STN2540-A.pdf
2STN2540-A
Виробник: STMicroelectronics
Description: TRANS PNP 40V 5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.6 W
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PD55025TR-E en.CD00108676.pdf
PD55025TR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 12.5V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 500MHz
Power - Output: 25W
Gain: 14.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Active
Voltage - Rated: 40 V
Voltage - Test: 12.5 V
Current - Test: 200 mA
товару немає в наявності
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PD85025TR-E steval-tdr022v1.pdf
PD85025TR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
товару немає в наявності
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PD85025STR-E steval-tdr022v1.pdf
PD85025STR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 7A
Frequency: 870MHz
Power - Output: 10W
Gain: 17.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 300 mA
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PD20015C PD20015C.pdf
PD20015C
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 7A
Frequency: 2GHz
Power - Output: 15W
Gain: 11dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5167.98 грн
10+4675.48 грн
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PD84010S-E en.CD00167351.pdf
PD84010S-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 7.5V PWRSO-10RF
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 8A
Frequency: 870MHz
Power - Output: 2W
Gain: 16.3dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 40 V
Voltage - Test: 7.5 V
Current - Test: 300 mA
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PD85025C PD85025C.pdf
PD85025C
Виробник: STMicroelectronics
Description: FET RF 40V 945MHZ M243
товару немає в наявності
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PD85015TR-E CD00185996.pdf
PD85015TR-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
товару немає в наявності
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PD55015TR-E en.CD00128612.pdf
PD55015TR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 12.5V PWRSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 5A
Frequency: 500MHz
Power - Output: 15W
Gain: 14dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 40 V
Voltage - Test: 12.5 V
Current - Test: 150 mA
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
600+1105.98 грн
Мінімальне замовлення: 600
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ST26025A ST26025A.pdf
ST26025A
Виробник: STMicroelectronics
Description: TRANS PNP DARL 100V 20A TO-3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: PNP - Darlington
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
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PD20010S-E en.CD00228754.pdf
PD20010S-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
товару немає в наявності
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ST5027 Power%20Bipolar%20Transistors.pdf
ST5027
Виробник: STMicroelectronics
Description: TRANS NPN 800V 3A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 90 W
товару немає в наявності
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PD20015-E
PD20015-E
Виробник: STMicroelectronics
Description: TRANS RF PWR N-CH POWERSO-10RF
товару немає в наявності
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PD20015S-E en.CD00173496.pdf
PD20015S-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
товару немає в наявності
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SD2931-11 SD2931-11.pdf
SD2931-11
Виробник: STMicroelectronics
Description: RF MOSFET 50V M246
Packaging: Box
Package / Case: M246
Current Rating (Amps): 20A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: M246
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 250 mA
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PD57006STR-E PD57006%28S%29-E.pdf
PD57006STR-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 1A
Frequency: 945MHz
Power - Output: 6W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 70 mA
товару немає в наявності
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PD85035C en.CD00176191.pdf
PD85035C
Виробник: STMicroelectronics
Description: FET RF 40V 945MHZ M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 8A
Frequency: 945MHz
Power - Output: 15W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
товару немає в наявності
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START499D CD00187074.pdf
START499D
Виробник: STMicroelectronics
Description: TRANS RF NPN 4.5V 1A SOT-89
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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PD54003S-E en.CD00100209.pdf
PD54003S-E
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 7.5V PWRSO-10RF
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 4A
Frequency: 500MHz
Power - Output: 3W
Gain: 12dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 25 V
Voltage - Test: 7.5 V
Current - Test: 50 mA
товару немає в наявності
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PD85035TR-E en.CD00162008.pdf
PD85035TR-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 8A
Frequency: 870MHz
Power - Output: 15W
Gain: 17dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Active
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 350 mA
товару немає в наявності
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PD20010-E radio-frequency-transistors.html
PD20010-E
Виробник: STMicroelectronics
Description: TRANS RF N-CH FET POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 5A
Frequency: 2GHz
Power - Output: 10W
Gain: 11dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 40 V
Voltage - Test: 13.6 V
Current - Test: 150 mA
товару немає в наявності
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P0115DA 1AA3 CD00217835.pdf
P0115DA 1AA3
Виробник: STMicroelectronics
Description: IC SCR 0.8A 400V TO-92
товару немає в наявності
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BTB06-800SWRG bta06.pdf
BTB06-800SWRG
Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
товару немає в наявності
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STF30NM60N en.CD00174866.pdf
STF30NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
товару немає в наявності
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STI21NM60ND STx21NM60ND_Rev3.pdf
STI21NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
товару немає в наявності
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STP6NK90ZFP description en.CD00003175.pdf
STP6NK90ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 900V 5.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 60.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 548 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+298.12 грн
50+146.33 грн
100+132.66 грн
500+102.04 грн
Мінімальне замовлення: 2
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STP7NK80ZFP description en.CD00003046.pdf
STP7NK80ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+287.78 грн
50+140.73 грн
100+127.52 грн
Мінімальне замовлення: 2
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STD17NF03L-1 STD17NF03L%28-1%29.pdf
STD17NF03L-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
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STD70N02L-1 en.CD00067209.pdf
STD70N02L-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 25V 60A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 16 V
товару немає в наявності
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STB7NK80Z-1 en.CD00003046.pdf
STB7NK80Z-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
товару немає в наявності
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STP9NK70ZFP en.CD00002909.pdf
STP9NK70ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 700V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
на замовлення 984 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+322.24 грн
50+159.25 грн
100+144.60 грн
500+111.62 грн
Мінімальне замовлення: 2
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STF6N62K3 en.CD00195598.pdf
STF6N62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.28Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.56 грн
50+89.67 грн
100+80.62 грн
500+60.75 грн
Мінімальне замовлення: 2
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STD2NC45-1 en.CD00003138.pdf
STD2NC45-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 450V 1.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 664 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.63 грн
75+51.61 грн
150+46.19 грн
525+36.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF60N55F3 en.CD00152203.pdf
STF60N55F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
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STF30NM60ND en.CD00174884.pdf
STF30NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
товару немає в наявності
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STD2NK60Z-1 en.CD00003700.pdf
STD2NK60Z-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 1.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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STF6NK70Z en.CD00043979.pdf
STF6NK70Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 700V 5A TO220FP
товару немає в наявності
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STP9NK50ZFP en.CD00002970.pdf
STP9NK50ZFP
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+211.10 грн
50+100.71 грн
100+90.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP75NF68 en.CD00205590.pdf
STP75NF68
Виробник: STMicroelectronics
Description: MOSFET N-CH 68V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
товару немає в наявності
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STF6NM60N en.CD00157375.pdf
STF6NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
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STD1NK60-1 std1nk60-1.pdf
STD1NK60-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
на замовлення 1817 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.35 грн
75+52.03 грн
150+46.57 грн
525+36.43 грн
1050+33.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF2HNK60Z stf2hnk60z.pdf
STF2HNK60Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 670 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+171.46 грн
50+80.08 грн
100+71.85 грн
500+53.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF2NK60Z en.CD00003700.pdf
STF2NK60Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 1.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
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