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STM32L041E6Y6TR STMicroelectronics en.DM00152023.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; WLCSP25; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 20
Case: WLCSP25
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: reel; tape
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STM32L041F6P7 STMicroelectronics en.DM00152023.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; TSSOP20; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 15
Case: TSSOP20
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041G6U7 STMicroelectronics en.DM00152023.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN28; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 21
Case: UFQFPN28
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041K6T7 STMicroelectronics en.DM00152023.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041K6U6 STMicroelectronics en.DM00152023.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041K6U6D STMicroelectronics en.DM00152023.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.65...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041K6U7 STMicroelectronics en.DM00152023.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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L9822EPD L9822EPD STMicroelectronics L9822E.pdf Category: Drivers - integrated circuits
Description: IC: driver; low-side; PowerSO20; Ch: 8; 4.5÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: PowerSO20
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V
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L9822EPD013TR STMicroelectronics L9822E.pdf Category: Drivers - integrated circuits
Description: IC: driver; low-side; PowerSO20; Ch: 8; 4.5÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: PowerSO20
Number of channels: 8
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
на замовлення 583 шт:
термін постачання 21-30 дні (днів)
1+579.35 грн
3+370.14 грн
7+350.22 грн
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STPST8H100SF STMicroelectronics stpst8h100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 8A; reel,tape
Mounting: SMD
Case: TO277A
Leakage current: 17µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.695V
Load current: 8A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 200A
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STPST1H100ZFY STMicroelectronics stpst1h100-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Case: SOD123F
Leakage current: 1.7µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.725V
Load current: 1A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 25A
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STPST1H100ZF STMicroelectronics stpst1h100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Case: SOD123F
Leakage current: 1.7µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.725V
Load current: 1A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 25A
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STPST5H100AF STMicroelectronics stpst5h100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 100V; 5A; reel,tape
Mounting: SMD
Case: SOD128F
Leakage current: 11.5µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.68V
Load current: 5A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 75A
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STPST15H100SBYTR STMicroelectronics stpst15h100sb-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 15A; reel,tape
Mounting: SMD
Case: DPAK
Leakage current: 28µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Load current: 15A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 230A
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STPST2H100AF STMicroelectronics stpst2h100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD128F
Leakage current: 2.7µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.805V
Load current: 2A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 35A
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STPST10H100SBYTR STMicroelectronics stpst10h100sb-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 10A; reel,tape
Mounting: SMD
Case: DPAK
Leakage current: 26µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.715V
Load current: 10A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 210A
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STPST10H100SFY STMicroelectronics stpst10h100-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Mounting: SMD
Case: TO277A
Leakage current: 26µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.7V
Load current: 10A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 235A
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STPST12H100SF STMicroelectronics stpst12h100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Mounting: SMD
Case: TO277A
Leakage current: 24µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.57V
Load current: 12A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 230A
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STPST2H100AFY STMicroelectronics stpst2h100-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD128F
Leakage current: 2.7µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.805V
Load current: 2A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 35A
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LF347DT LF347DT STMicroelectronics LFx47.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; 8÷36V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 16V/μs
Operating temperature: 0...70°C
Input offset voltage: 3mV
Power dissipation: 0.68W
Kind of package: reel; tape
Operating voltage: 8...36V
на замовлення 633 шт:
термін постачання 21-30 дні (днів)
11+37.96 грн
15+25.75 грн
42+21.46 грн
50+21.38 грн
75+21.30 грн
100+20.69 грн
115+20.23 грн
Мінімальне замовлення: 11
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M48T02-70PC1 M48T02-70PC1 STMicroelectronics M48T02_M48T12.pdf description Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 16kbSRAM; PCDIP24; 4.75÷5.5V
Case: PCDIP24
DC supply current: 80mA
Operating voltage: 4.75...5.5V
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory organisation: 2kx8bit
Access time: 70ns
Date format: YY-MM-DD-dd
Clock format: HH:MM:SS (24h)
Time keeping current: 3mA
Battery/ rechargeable battery: battery Li(CF) BR1225 2,8V x1
Trade name: TIMEKEEPER®
Memory: 16kb SRAM
Mounting: THT
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
1+1392.25 грн
2+1225.37 грн
14+1216.94 грн
28+1178.62 грн
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STW10NK80Z STW10NK80Z STMicroelectronics STP10NK80ZFP.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 176 шт:
термін постачання 21-30 дні (днів)
2+354.05 грн
8+111.88 грн
22+105.75 грн
Мінімальне замовлення: 2
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STW10N95K5 STMicroelectronics stw10n95k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 32A
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STW10N105K5 STMicroelectronics stw10n105k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STGB6NC60HDT4 STMicroelectronics en.CD00058424.pdf description Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40V60F STMicroelectronics en.DM00086251.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
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STGB10M65DF2 STMicroelectronics en.DM00157911.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40H65FB STMicroelectronics en.DM00306732.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
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STGB50H65FB2 STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
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STGB20M65DF2 STMicroelectronics en.DM00244727.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N36LZAG STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB5H60DF STMicroelectronics en.DM00149621.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB6M65DF2 STMicroelectronics en.DM00250133.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10H60DF STMicroelectronics en.DM00092752.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10NB40LZT4 STMicroelectronics en.DM00372350.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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STGB14NC60KDT4 STGB14NC60KDT4 STMicroelectronics stgb14nc60kdt4.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB15M65DF2 STMicroelectronics en.DM00096991.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H60DF STMicroelectronics en.DM00066598.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H65FB2 STMicroelectronics stgb20h65fb2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
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STGB20N45LZAG STMicroelectronics en.DM00242156.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry
Version: ESD
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STGB20NB41LZT4 STMicroelectronics en.CD00003294.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry; ignition systems
Version: ESD
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STGB20V60DF STMicroelectronics en.DM00079434.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N40LZAG STMicroelectronics STGB25N40LZAG.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB30M65DF2 STMicroelectronics STGB30M65DF2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB30V60DF STGB30V60DF STMicroelectronics stgb30v60df.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB4M65DF2 STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7H60DF STMicroelectronics en.DM00164492.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7NC60HDT4 STMicroelectronics en.CD00003695.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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VNP35N07-E VNP35N07-E STMicroelectronics vnb35n07-e.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 35A; Ch: 1; THT; TO220-3; tube
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 35A
Number of channels: 1
Mounting: THT
Case: TO220-3
On-state resistance: 28mΩ
Kind of package: tube
Output voltage: 70V
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
2+316.91 грн
3+278.95 грн
5+217.64 грн
12+206.14 грн
100+198.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
L9362013TR STMicroelectronics l9362.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 4; SMD; PowerSSO36; reel,tape; 3MHz
Mounting: SMD
Operating temperature: -40...150°C
Case: PowerSSO36
Supply voltage: 4.5...5.5V
Frequency: 3MHz
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: reel; tape
Kind of integrated circuit: low-side
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SMAJ48A-TR SMAJ48A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2303 шт:
термін постачання 21-30 дні (днів)
20+20.63 грн
28+14.10 грн
50+11.80 грн
100+10.81 грн
167+5.52 грн
457+5.21 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
STL260N4F7 STMicroelectronics stl260n4f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STL260N4LF7 STMicroelectronics stl260n4lf7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STWA88N65M5 STMicroelectronics stwa88n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 50.5A; Idm: 336A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
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SMCJ15A-TR SMCJ15A-TR STMicroelectronics smcj15a.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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MC3303DT MC3303DT STMicroelectronics mc3303.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 3÷36V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 6mV
Bandwidth: 1MHz
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.5V/μs
Input offset current: 200nA
Input bias current: 0.8µA
Operating voltage: 3...36V
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VN820 VN820 STMicroelectronics VN820.pdf Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 9A; Pentawatt
Type of integrated circuit: power switch
Case: Pentawatt
Output current: 9A
Number of channels: 1
Kind of integrated circuit: high-side
Mounting: THT
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SCT070H120G3AG STMicroelectronics sct070h120g3ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT070W120G3-4AG STMicroelectronics sct070w120g3-4ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 116A; 236W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 116A
Power dissipation: 236W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
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SMAJ28A-TR SMAJ28A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 9740 шт:
термін постачання 21-30 дні (днів)
16+27.23 грн
23+16.94 грн
50+13.56 грн
100+12.18 грн
163+5.44 грн
449+5.13 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
STM32L041E6Y6TR en.DM00152023.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; WLCSP25; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 20
Case: WLCSP25
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: reel; tape
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STM32L041F6P7 en.DM00152023.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; TSSOP20; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 15
Case: TSSOP20
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041G6U7 en.DM00152023.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN28; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 21
Case: UFQFPN28
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041K6T7 en.DM00152023.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041K6U6 en.DM00152023.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041K6U6D en.DM00152023.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.65÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.65...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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STM32L041K6U7 en.DM00152023.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI x2; USART
Kind of architecture: Cortex M0+
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; watchdog
Memory: 1kB EEPROM; 8kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32L0
Kind of package: in-tray
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L9822EPD L9822E.pdf
L9822EPD
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; low-side; PowerSO20; Ch: 8; 4.5÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: PowerSO20
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V
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L9822EPD013TR L9822E.pdf
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; low-side; PowerSO20; Ch: 8; 4.5÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: PowerSO20
Number of channels: 8
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...5.5V
на замовлення 583 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+579.35 грн
3+370.14 грн
7+350.22 грн
В кошику  од. на суму  грн.
STPST8H100SF stpst8h100.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 8A; reel,tape
Mounting: SMD
Case: TO277A
Leakage current: 17µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.695V
Load current: 8A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 200A
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STPST1H100ZFY stpst1h100-y.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Case: SOD123F
Leakage current: 1.7µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.725V
Load current: 1A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 25A
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STPST1H100ZF stpst1h100.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Case: SOD123F
Leakage current: 1.7µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.725V
Load current: 1A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 25A
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STPST5H100AF stpst5h100.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 100V; 5A; reel,tape
Mounting: SMD
Case: SOD128F
Leakage current: 11.5µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.68V
Load current: 5A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 75A
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STPST15H100SBYTR stpst15h100sb-y.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 15A; reel,tape
Mounting: SMD
Case: DPAK
Leakage current: 28µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Load current: 15A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 230A
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STPST2H100AF stpst2h100.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD128F
Leakage current: 2.7µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.805V
Load current: 2A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 35A
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STPST10H100SBYTR stpst10h100sb-y.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 10A; reel,tape
Mounting: SMD
Case: DPAK
Leakage current: 26µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.715V
Load current: 10A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 210A
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STPST10H100SFY stpst10h100-y.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Mounting: SMD
Case: TO277A
Leakage current: 26µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.7V
Load current: 10A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 235A
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STPST12H100SF stpst12h100.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Mounting: SMD
Case: TO277A
Leakage current: 24µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.57V
Load current: 12A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 230A
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STPST2H100AFY stpst2h100-y.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD128F
Leakage current: 2.7µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.805V
Load current: 2A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Max. forward impulse current: 35A
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LF347DT LFx47.pdf
LF347DT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; 8÷36V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 16V/μs
Operating temperature: 0...70°C
Input offset voltage: 3mV
Power dissipation: 0.68W
Kind of package: reel; tape
Operating voltage: 8...36V
на замовлення 633 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+37.96 грн
15+25.75 грн
42+21.46 грн
50+21.38 грн
75+21.30 грн
100+20.69 грн
115+20.23 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
M48T02-70PC1 description M48T02_M48T12.pdf
M48T02-70PC1
Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 16kbSRAM; PCDIP24; 4.75÷5.5V
Case: PCDIP24
DC supply current: 80mA
Operating voltage: 4.75...5.5V
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory organisation: 2kx8bit
Access time: 70ns
Date format: YY-MM-DD-dd
Clock format: HH:MM:SS (24h)
Time keeping current: 3mA
Battery/ rechargeable battery: battery Li(CF) BR1225 2,8V x1
Trade name: TIMEKEEPER®
Memory: 16kb SRAM
Mounting: THT
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1392.25 грн
2+1225.37 грн
14+1216.94 грн
28+1178.62 грн
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STW10NK80Z description STP10NK80ZFP.pdf
STW10NK80Z
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 176 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+354.05 грн
8+111.88 грн
22+105.75 грн
Мінімальне замовлення: 2
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STW10N95K5 stw10n95k5.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 32A
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STW10N105K5 stw10n105k5.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STGB6NC60HDT4 description en.CD00058424.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40V60F en.DM00086251.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
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STGB10M65DF2 en.DM00157911.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40H65FB en.DM00306732.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
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STGB50H65FB2
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
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STGB20M65DF2 en.DM00244727.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N36LZAG
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB5H60DF en.DM00149621.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB6M65DF2 en.DM00250133.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10H60DF en.DM00092752.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10NB40LZT4 en.DM00372350.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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STGB14NC60KDT4 stgb14nc60kdt4.pdf
STGB14NC60KDT4
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB15M65DF2 en.DM00096991.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H60DF en.DM00066598.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H65FB2 stgb20h65fb2.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
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STGB20N45LZAG en.DM00242156.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Application: automotive industry
Version: ESD
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STGB20NB41LZT4 en.CD00003294.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry; ignition systems
Version: ESD
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STGB20V60DF en.DM00079434.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB25N40LZAG STGB25N40LZAG.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB30M65DF2 STGB30M65DF2.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB30V60DF stgb30v60df.pdf
STGB30V60DF
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB4M65DF2
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7H60DF en.DM00164492.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7NC60HDT4 en.CD00003695.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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VNP35N07-E vnb35n07-e.pdf
VNP35N07-E
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 35A; Ch: 1; THT; TO220-3; tube
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 35A
Number of channels: 1
Mounting: THT
Case: TO220-3
On-state resistance: 28mΩ
Kind of package: tube
Output voltage: 70V
на замовлення 348 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+316.91 грн
3+278.95 грн
5+217.64 грн
12+206.14 грн
100+198.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
L9362013TR l9362.pdf
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; Ch: 4; SMD; PowerSSO36; reel,tape; 3MHz
Mounting: SMD
Operating temperature: -40...150°C
Case: PowerSSO36
Supply voltage: 4.5...5.5V
Frequency: 3MHz
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: reel; tape
Kind of integrated circuit: low-side
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SMAJ48A-TR SMAJxxX_ser.pdf
SMAJ48A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2303 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+20.63 грн
28+14.10 грн
50+11.80 грн
100+10.81 грн
167+5.52 грн
457+5.21 грн
Мінімальне замовлення: 20
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STL260N4F7 stl260n4f7.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 72nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STL260N4LF7 stl260n4lf7.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Case: PowerFLAT 5x6
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
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STWA88N65M5 stwa88n65m5.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 50.5A; Idm: 336A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
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SMCJ15A-TR smcj15a.pdf
SMCJ15A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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MC3303DT mc3303.pdf
MC3303DT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 3÷36V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 6mV
Bandwidth: 1MHz
Integrated circuit features: low power
Kind of package: reel; tape
Slew rate: 0.5V/μs
Input offset current: 200nA
Input bias current: 0.8µA
Operating voltage: 3...36V
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VN820 VN820.pdf
VN820
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 9A; Pentawatt
Type of integrated circuit: power switch
Case: Pentawatt
Output current: 9A
Number of channels: 1
Kind of integrated circuit: high-side
Mounting: THT
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SCT070H120G3AG sct070h120g3ag.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT070W120G3-4AG sct070w120g3-4ag.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 116A; 236W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 116A
Power dissipation: 236W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
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SMAJ28A-TR SMAJxxX_ser.pdf
SMAJ28A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 9740 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.23 грн
23+16.94 грн
50+13.56 грн
100+12.18 грн
163+5.44 грн
449+5.13 грн
Мінімальне замовлення: 16
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