Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164655) > Сторінка 314 з 2745
| Фото | Назва | Виробник | Інформація |
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STB14NK50ZT4 | STMicroelectronics |
Description: MOSFET N-CH 500V 14A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STB170NF04 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
на замовлення 516 шт: термін постачання 21-31 дні (днів) |
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STB6NK60ZT4 | STMicroelectronics |
Description: MOSFET N-CH 600V 6A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V |
на замовлення 889 шт: термін постачання 21-31 дні (днів) |
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STB9NK50ZT4 | STMicroelectronics |
Description: MOSFET N-CH 500V 7.2A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
на замовлення 1224 шт: термін постачання 21-31 дні (днів) |
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STB9NK60ZT4 | STMicroelectronics |
Description: MOSFET N-CH 600V 7A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V |
на замовлення 455 шт: термін постачання 21-31 дні (днів) |
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STD13003T4 | STMicroelectronics |
Description: TRANS NPN 400V 1.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 20 W |
на замовлення 2286 шт: термін постачання 21-31 дні (днів) |
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STD25NF10LA | STMicroelectronics |
Description: MOSFET N-CH 100V 25A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
на замовлення 2572 шт: термін постачання 21-31 дні (днів) |
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STD40NF3LLT4 | STMicroelectronics |
Description: MOSFET N-CH 30V 40A DPAK |
на замовлення 1319 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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STF826 | STMicroelectronics |
Description: TRANS PNP 30V 3A SOT-89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.4 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STGD7NB60ST4 | STMicroelectronics |
Description: IGBT 600V 15A 55W DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A Supplier Device Package: DPAK Td (on/off) @ 25°C: 700ns/- Switching Energy: 3.5mJ (off) Test Condition: 480V, 7A, 1kOhm, 15V Gate Charge: 33 nC Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 55 W |
на замовлення 4454 шт: термін постачання 21-31 дні (днів) |
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STL15N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 15A POWERFLAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS130U | STMicroelectronics |
Description: DIODE SCHOTTKY 30V 1A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 30 V |
на замовлення 11892 шт: термін постачання 21-31 дні (днів) |
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STPS1H100MF | STMicroelectronics |
Description: DIODE SCHOTT 100V 1A STMITE FLATPackaging: Cut Tape (CT) Package / Case: DO-222AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: STmite Flat Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 100 V |
на замовлення 12270 шт: термін постачання 21-31 дні (днів) |
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STPS20150CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOT 150V 10A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
на замовлення 1455 шт: термін постачання 21-31 дні (днів) |
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STPS20SM100SG-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 100V 20A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: D²PAK Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS30150CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOT 150V 15A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A Current - Reverse Leakage @ Vr: 6.5 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS30SM100SG-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 100V 30A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 30 A Current - Reverse Leakage @ Vr: 45 µA @ 100 V |
на замовлення 17541 шт: термін постачання 21-31 дні (днів) |
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STPS3L60QRL | STMicroelectronics |
Description: DIODE SCHOTTKY 60V 3A DO15Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-15 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Current - Reverse Leakage @ Vr: 60 µA @ 60 V |
на замовлення 11955 шт: термін постачання 21-31 дні (днів) |
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STPS40SM100CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 100V D2PAK |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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STPS660CB-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: 125°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS745G-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 45V 7.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 7.5A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
на замовлення 1711 шт: термін постачання 21-31 дні (днів) |
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STS1DNC45 | STMicroelectronics |
Description: MOSFET 2N-CH 450V 0.4A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 3407 шт: термін постачання 21-31 дні (днів) |
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STS6NF20V | STMicroelectronics |
Description: MOSFET N-CH 20V 6A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.95V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V |
на замовлення 5694 шт: термін постачання 21-31 дні (днів) |
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STTH1002CB-TR | STMicroelectronics |
Description: DIODE ARRAY GP 200V 8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15091 шт: термін постачання 21-31 дні (днів) |
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STTH3R04RL | STMicroelectronics |
Description: DIODE STANDARD 400V 3A DO201ADPackaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 11620 шт: термін постачання 21-31 дні (днів) |
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TN2540-600G-TR | STMicroelectronics |
Description: SCR 600V 25A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 314A Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 µA Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 600 V |
на замовлення 1230 шт: термін постачання 21-31 дні (днів) |
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TPI12011NRL | STMicroelectronics |
Description: THYRISTOR 30A 8SOIC |
на замовлення 2392 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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Z0103MN 6AA4 | STMicroelectronics |
Description: TRIAC SENS GATE 600V 1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 7 mA Current - Gate Trigger (Igt) (Max): 3 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: SOT-223 Part Status: Active Current - On State (It (RMS)) (Max): 1 A Voltage - Off State: 600 V |
на замовлення 23587 шт: термін постачання 21-31 дні (днів) |
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Z0107MA 5AL2 | STMicroelectronics |
Description: TRIAC SENS GATE 600V 1A TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 1 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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Z0107NA 5AL2 | STMicroelectronics |
Description: TRIAC SENS GATE 800V 1A TO92Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-92 Part Status: Active Current - On State (It (RMS)) (Max): 1 A Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESDA6V1-5P6 | STMicroelectronics |
Description: TVS DIODE 3VWM SOT666IPPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-666IP Unidirectional Channels: 5 Voltage - Breakdown (Min): 6.1V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active |
на замовлення 3234 шт: термін постачання 21-31 дні (днів) |
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LFTVS10-1F3 | STMicroelectronics |
Description: TVS DIODE 8VWM 13VC 4FLIPCHIP Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 200pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: 4-FlipChip (0.77x0.77) Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 350W Power Line Protection: No Part Status: Obsolete |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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Z0107SN 5AA4 | STMicroelectronics |
Description: TRIAC SENS GATE 700V 1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: SOT-223 Part Status: Active Current - On State (It (RMS)) (Max): 1 A Voltage - Off State: 700 V |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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STD40NF3LLT4 | STMicroelectronics |
Description: MOSFET N-CH 30V 40A DPAK |
на замовлення 1319 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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STL15N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 15A POWERFLAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPI12011NRL | STMicroelectronics |
Description: THYRISTOR 30A 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LET9045 | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RFPackaging: Tube Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Current Rating (Amps): 9A Frequency: 960MHz Power - Output: 59W Gain: 17.5dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Formed Lead) Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 300 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LET9045S | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RFPackaging: Tube Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) Current Rating (Amps): 9A Frequency: 960MHz Power - Output: 59W Gain: 17.5dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Straight Lead) Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 300 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LET9060STR | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RFPackaging: Tape & Reel (TR) Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) Current Rating (Amps): 12A Frequency: 960MHz Power - Output: 60W Gain: 17.2dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Straight Lead) Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 300 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LET9060TR | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RFPackaging: Tape & Reel (TR) Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Current Rating (Amps): 12A Frequency: 960MHz Power - Output: 60W Gain: 17.2dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Formed Lead) Part Status: Obsolete Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 300 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB95N4F3 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STF6N65K3 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.4A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STGW50H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 100A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 62ns/178ns Switching Energy: 890µJ (on), 860µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 217 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 360 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STGW60H65F | STMicroelectronics |
Description: IGBT TRENCH FS 650V 120A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 65ns/180ns Switching Energy: 750µJ (on), 1.05mJ (off) Test Condition: 400V, 60A, 10Ohm, 15V Gate Charge: 217 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 360 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS30M60DJF-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 60V 30A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A Current - Reverse Leakage @ Vr: 90 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LET9060TR | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RFPackaging: Cut Tape (CT) Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Current Rating (Amps): 12A Frequency: 960MHz Power - Output: 60W Gain: 17.2dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Formed Lead) Part Status: Obsolete Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 300 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB95N4F3 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A D2PAK |
на замовлення 391 шт: термін постачання 21-31 дні (днів) |
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STPS30M60DJF-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 60V 30A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A Current - Reverse Leakage @ Vr: 90 µA @ 60 V |
на замовлення 1146 шт: термін постачання 21-31 дні (днів) |
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LDP24A | STMicroelectronics |
Description: TVS DIODE 24VWM 40VC R6Packaging: Cut Tape (CT) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Applications: General Purpose Capacitance @ Frequency: 8000pF @ 1MHz Current - Peak Pulse (10/1000µs): 30A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: R-6 Unidirectional Channels: 1 Voltage - Breakdown (Min): 25V Voltage - Clamping (Max) @ Ipp: 40V Power Line Protection: No |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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1.5KE6V8CA | STMicroelectronics |
Description: TVS DIODE 5.8VWM 13.4VC DO201Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Applications: General Purpose Capacitance @ Frequency: 4750pF @ 1MHz Current - Peak Pulse (10/1000µs): 746A (8/20µs) Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 13.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
на замовлення 365 шт: термін постачання 21-31 дні (днів) |
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BZW04-5V8B | STMicroelectronics |
Description: TVS DIODE 5.8VWM 10.5V DO204ACPackaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Applications: General Purpose Capacitance @ Frequency: 1750pF @ 1MHz Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
на замовлення 338 шт: термін постачання 21-31 дні (днів) |
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BZW50-120B | STMicroelectronics |
Description: TVS DIODE 120VWM 274VC R6Packaging: Cut Tape (CT) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Applications: General Purpose Capacitance @ Frequency: 950pF @ 1MHz Current - Peak Pulse (10/1000µs): 219A (8/20µs) Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: R-6 Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 274V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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BZW50-68 | STMicroelectronics |
Description: TVS DIODE 68VWM 157VC R6Packaging: Cut Tape (CT) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Applications: General Purpose Capacitance @ Frequency: 3000pF @ 1MHz Current - Peak Pulse (10/1000µs): 382A (8/20µs) Voltage - Reverse Standoff (Typ): 68V Supplier Device Package: R-6 Unidirectional Channels: 1 Voltage - Breakdown (Min): 75.6V Voltage - Clamping (Max) @ Ipp: 157V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZW50-68B | STMicroelectronics |
Description: TVS DIODE 68VWM 157VC R6Packaging: Cut Tape (CT) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Applications: General Purpose Capacitance @ Frequency: 1500pF @ 1MHz Current - Peak Pulse (10/1000µs): 382A (8/20µs) Voltage - Reverse Standoff (Typ): 68V Supplier Device Package: R-6 Bidirectional Channels: 1 Voltage - Breakdown (Min): 75.6V Voltage - Clamping (Max) @ Ipp: 157V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
на замовлення 74 шт: термін постачання 21-31 дні (днів) |
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STTH1L06 | STMicroelectronics |
Description: DIODE STANDARD 600V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 2099 шт: термін постачання 21-31 дні (днів) |
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STTH1R02Q | STMicroelectronics |
Description: DIODE GEN PURP 200V 1.5A DO15Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-15 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
на замовлення 1159 шт: термін постачання 21-31 дні (днів) |
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TPA270 | STMicroelectronics |
Description: THYRISTOR 270V 150A DO204AC |
на замовлення 378 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BZW50-33RL | STMicroelectronics |
Description: TVS DIODE 33VWM 76VC R6Packaging: Cut Tape (CT) Package / Case: R-6, Axial Mounting Type: Through Hole Type: Zener Applications: General Purpose Capacitance @ Frequency: 5750pF @ 1MHz Current - Peak Pulse (10/1000µs): 789A (8/20µs) Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: R-6 Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.6V Voltage - Clamping (Max) @ Ipp: 76V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
на замовлення 1562 шт: термін постачання 21-31 дні (днів) |
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P0111MN 5AA4 | STMicroelectronics |
Description: SCR 600V 800MA SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 25 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 7A, 8A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.95 V Current - Off State (Max): 10 µA Supplier Device Package: SOT-223 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V |
на замовлення 6704 шт: термін постачання 21-31 дні (днів) |
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SM15T12CA | STMicroelectronics |
Description: TVS DIODE 10.2VWM 21.7VC SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 461A (8/20µs) Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 21.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 3318 шт: термін постачання 21-31 дні (днів) |
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| STB14NK50ZT4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 500V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 380.98 грн |
| 10+ | 244.18 грн |
| 100+ | 174.61 грн |
| 500+ | 157.48 грн |
| STB170NF04 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
на замовлення 516 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 258.96 грн |
| 10+ | 185.67 грн |
| 100+ | 150.52 грн |
| 500+ | 120.01 грн |
| STB6NK60ZT4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Description: MOSFET N-CH 600V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
на замовлення 889 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.19 грн |
| 10+ | 152.34 грн |
| 100+ | 106.02 грн |
| 500+ | 85.64 грн |
| STB9NK50ZT4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Description: MOSFET N-CH 500V 7.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 1224 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.00 грн |
| 10+ | 102.07 грн |
| 100+ | 69.50 грн |
| 500+ | 52.13 грн |
| STB9NK60ZT4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Description: MOSFET N-CH 600V 7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
на замовлення 455 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 297.98 грн |
| 10+ | 189.11 грн |
| 100+ | 133.21 грн |
| STD13003T4 |
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Виробник: STMicroelectronics
Description: TRANS NPN 400V 1.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
Description: TRANS NPN 400V 1.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
на замовлення 2286 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.15 грн |
| 10+ | 52.75 грн |
| 100+ | 34.73 грн |
| 500+ | 25.33 грн |
| 1000+ | 22.99 грн |
| STD25NF10LA |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
на замовлення 2572 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.80 грн |
| 10+ | 94.95 грн |
| 100+ | 64.41 грн |
| 500+ | 48.18 грн |
| 1000+ | 46.09 грн |
| STD40NF3LLT4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 40A DPAK
Description: MOSFET N-CH 30V 40A DPAK
на замовлення 1319 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STF826 |
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Виробник: STMicroelectronics
Description: TRANS PNP 30V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.4 W
Description: TRANS PNP 30V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.4 W
товару немає в наявності
В кошику
од. на суму грн.
| STGD7NB60ST4 |
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Виробник: STMicroelectronics
Description: IGBT 600V 15A 55W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/-
Switching Energy: 3.5mJ (off)
Test Condition: 480V, 7A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 55 W
Description: IGBT 600V 15A 55W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/-
Switching Energy: 3.5mJ (off)
Test Condition: 480V, 7A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 55 W
на замовлення 4454 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 205.01 грн |
| 10+ | 127.88 грн |
| 100+ | 88.13 грн |
| 500+ | 68.11 грн |
| STL15N3LLH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 15A POWERFLAT
Description: MOSFET N-CH 30V 15A POWERFLAT
товару немає в наявності
В кошику
од. на суму грн.
| STPS130U |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
на замовлення 11892 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.39 грн |
| 19+ | 16.86 грн |
| 100+ | 11.29 грн |
| 500+ | 8.17 грн |
| 1000+ | 7.04 грн |
| STPS1H100MF |
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Виробник: STMicroelectronics
Description: DIODE SCHOTT 100V 1A STMITE FLAT
Packaging: Cut Tape (CT)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite Flat
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Description: DIODE SCHOTT 100V 1A STMITE FLAT
Packaging: Cut Tape (CT)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite Flat
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
на замовлення 12270 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.54 грн |
| 18+ | 18.62 грн |
| 100+ | 11.77 грн |
| 500+ | 8.25 грн |
| 1000+ | 7.06 грн |
| 2000+ | 6.51 грн |
| 5000+ | 5.67 грн |
| STPS20150CG-TR |
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Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 150V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE ARRAY SCHOT 150V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.69 грн |
| 10+ | 71.14 грн |
| 100+ | 51.46 грн |
| 500+ | 38.13 грн |
| STPS20SM100SG-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: D²PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Description: DIODE SCHOTTKY 100V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: D²PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS30150CG-TR |
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Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 150V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 150 V
Description: DIODE ARRAY SCHOT 150V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS30SM100SG-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 100 V
Description: DIODE SCHOTTKY 100V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 100 V
на замовлення 17541 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.44 грн |
| 10+ | 51.55 грн |
| STPS3L60QRL |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 3A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
на замовлення 11955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.63 грн |
| 13+ | 24.94 грн |
| 100+ | 15.92 грн |
| 500+ | 11.27 грн |
| 1000+ | 9.80 грн |
| 2000+ | 9.09 грн |
| STPS40SM100CG-TR |
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Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 100V D2PAK
Description: DIODE ARRAY SCHOTTKY 100V D2PAK
на замовлення 32 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STPS660CB-TR |
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Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS745G-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 7.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE SCHOTTKY 45V 7.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 1711 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.05 грн |
| STS1DNC45 |
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Виробник: STMicroelectronics
Description: MOSFET 2N-CH 450V 0.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 450V 0.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 3407 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.73 грн |
| 10+ | 119.65 грн |
| 100+ | 82.13 грн |
| 500+ | 62.40 грн |
| STS6NF20V |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 20V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.95V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Description: MOSFET N-CH 20V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.95V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
на замовлення 5694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.55 грн |
| 10+ | 49.79 грн |
| 100+ | 33.99 грн |
| 500+ | 25.86 грн |
| 1000+ | 23.45 грн |
| STTH1002CB-TR |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 200V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15091 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.82 грн |
| 10+ | 36.69 грн |
| 100+ | 28.39 грн |
| 500+ | 20.54 грн |
| 1000+ | 18.57 грн |
| STTH3R04RL |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 11620 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.20 грн |
| 15+ | 22.30 грн |
| 100+ | 18.86 грн |
| 500+ | 13.45 грн |
| TN2540-600G-TR |
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Виробник: STMicroelectronics
Description: SCR 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 314A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
Description: SCR 600V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 314A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 237.38 грн |
| 10+ | 148.66 грн |
| 100+ | 103.35 грн |
| 500+ | 82.97 грн |
| TPI12011NRL |
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Виробник: STMicroelectronics
Description: THYRISTOR 30A 8SOIC
Description: THYRISTOR 30A 8SOIC
на замовлення 2392 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| Z0103MN 6AA4 |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 600V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 7 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 7 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
на замовлення 23587 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.35 грн |
| 15+ | 22.06 грн |
| 100+ | 14.04 грн |
| 500+ | 9.90 грн |
| 1000+ | 8.84 грн |
| 2000+ | 7.95 грн |
| Z0107MA 5AL2 |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 600V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 600 V
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| Z0107NA 5AL2 |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 1A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-92
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 1A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-92
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 800 V
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| ESDA6V1-5P6 |
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Виробник: STMicroelectronics
Description: TVS DIODE 3VWM SOT666IP
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666IP
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM SOT666IP
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666IP
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 3234 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.94 грн |
| 42+ | 7.75 грн |
| 100+ | 5.69 грн |
| LFTVS10-1F3 |
Виробник: STMicroelectronics
Description: TVS DIODE 8VWM 13VC 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: 4-FlipChip (0.77x0.77)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 8VWM 13VC 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: 4-FlipChip (0.77x0.77)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Obsolete
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.45 грн |
| 10+ | 58.03 грн |
| 100+ | 38.18 грн |
| 500+ | 27.84 грн |
| 1000+ | 25.27 грн |
| Z0107SN 5AA4 |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 700V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 700 V
Description: TRIAC SENS GATE 700V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 700 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.36 грн |
| 10+ | 45.56 грн |
| STD40NF3LLT4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 40A DPAK
Description: MOSFET N-CH 30V 40A DPAK
на замовлення 1319 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STL15N3LLH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 15A POWERFLAT
Description: MOSFET N-CH 30V 15A POWERFLAT
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| TPI12011NRL |
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Виробник: STMicroelectronics
Description: THYRISTOR 30A 8SOIC
Description: THYRISTOR 30A 8SOIC
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| LET9045 |
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Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 9A
Frequency: 960MHz
Power - Output: 59W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 9A
Frequency: 960MHz
Power - Output: 59W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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| LET9045S |
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Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 9A
Frequency: 960MHz
Power - Output: 59W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 9A
Frequency: 960MHz
Power - Output: 59W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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| LET9060STR |
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Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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| LET9060TR |
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Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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| STB95N4F3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Description: MOSFET N-CH 40V 80A D2PAK
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| STF6N65K3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 5.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 650V 5.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
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| STGW50H60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/178ns
Switching Energy: 890µJ (on), 860µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 360 W
Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/178ns
Switching Energy: 890µJ (on), 860µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 360 W
товару немає в наявності
В кошику
од. на суму грн.
| STGW60H65F |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 65ns/180ns
Switching Energy: 750µJ (on), 1.05mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 65ns/180ns
Switching Energy: 750µJ (on), 1.05mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 217 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
товару немає в наявності
В кошику
од. на суму грн.
| STPS30M60DJF-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
Description: DIODE SCHOTTKY 60V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| LET9060TR |
![]() |
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
товару немає в наявності
В кошику
од. на суму грн.
| STB95N4F3 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Description: MOSFET N-CH 40V 80A D2PAK
на замовлення 391 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 201.69 грн |
| 10+ | 174.40 грн |
| 100+ | 140.17 грн |
| STPS30M60DJF-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
Description: DIODE SCHOTTKY 60V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 30 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
на замовлення 1146 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.92 грн |
| 10+ | 67.94 грн |
| 100+ | 50.33 грн |
| 500+ | 37.26 грн |
| 1000+ | 34.05 грн |
| LDP24A |
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Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 40VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 40V
Power Line Protection: No
Description: TVS DIODE 24VWM 40VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Voltage - Clamping (Max) @ Ipp: 40V
Power Line Protection: No
на замовлення 110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 316.24 грн |
| 10+ | 199.98 грн |
| 1.5KE6V8CA |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 5.8VWM 13.4VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 4750pF @ 1MHz
Current - Peak Pulse (10/1000µs): 746A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.8VWM 13.4VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 4750pF @ 1MHz
Current - Peak Pulse (10/1000µs): 746A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.22 грн |
| 13+ | 25.02 грн |
| 100+ | 24.28 грн |
| BZW04-5V8B | ![]() |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 5.8VWM 10.5V DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 1750pF @ 1MHz
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.8VWM 10.5V DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 1750pF @ 1MHz
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 338 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.37 грн |
| 16+ | 20.70 грн |
| 100+ | 14.01 грн |
| BZW50-120B |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 120VWM 274VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 950pF @ 1MHz
Current - Peak Pulse (10/1000µs): 219A (8/20µs)
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 120VWM 274VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 950pF @ 1MHz
Current - Peak Pulse (10/1000µs): 219A (8/20µs)
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 96 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 264.77 грн |
| 10+ | 166.97 грн |
| BZW50-68 |
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Виробник: STMicroelectronics
Description: TVS DIODE 68VWM 157VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 382A (8/20µs)
Voltage - Reverse Standoff (Typ): 68V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 75.6V
Voltage - Clamping (Max) @ Ipp: 157V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 68VWM 157VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 3000pF @ 1MHz
Current - Peak Pulse (10/1000µs): 382A (8/20µs)
Voltage - Reverse Standoff (Typ): 68V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 75.6V
Voltage - Clamping (Max) @ Ipp: 157V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BZW50-68B |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 68VWM 157VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 1500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 382A (8/20µs)
Voltage - Reverse Standoff (Typ): 68V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 75.6V
Voltage - Clamping (Max) @ Ipp: 157V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 68VWM 157VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 1500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 382A (8/20µs)
Voltage - Reverse Standoff (Typ): 68V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 75.6V
Voltage - Clamping (Max) @ Ipp: 157V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 74 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 209.16 грн |
| 10+ | 166.97 грн |
| STTH1L06 |
![]() |
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 2099 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.54 грн |
| 20+ | 16.31 грн |
| 100+ | 8.86 грн |
| 500+ | 7.14 грн |
| 1000+ | 6.34 грн |
| STTH1R02Q |
![]() |
Виробник: STMicroelectronics
Description: DIODE GEN PURP 200V 1.5A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 1.5A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.22 грн |
| 17+ | 19.26 грн |
| 100+ | 9.70 грн |
| 500+ | 8.06 грн |
| TPA270 | ![]() |
![]() |
Виробник: STMicroelectronics
Description: THYRISTOR 270V 150A DO204AC
Description: THYRISTOR 270V 150A DO204AC
на замовлення 378 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BZW50-33RL |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 33VWM 76VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 5750pF @ 1MHz
Current - Peak Pulse (10/1000µs): 789A (8/20µs)
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.6V
Voltage - Clamping (Max) @ Ipp: 76V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 33VWM 76VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 5750pF @ 1MHz
Current - Peak Pulse (10/1000µs): 789A (8/20µs)
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.6V
Voltage - Clamping (Max) @ Ipp: 76V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 1562 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.07 грн |
| 10+ | 135.96 грн |
| 100+ | 98.08 грн |
| 500+ | 88.36 грн |
| P0111MN 5AA4 |
![]() |
Виробник: STMicroelectronics
Description: SCR 600V 800MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 25 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7A, 8A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.95 V
Current - Off State (Max): 10 µA
Supplier Device Package: SOT-223
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Description: SCR 600V 800MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 25 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7A, 8A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.95 V
Current - Off State (Max): 10 µA
Supplier Device Package: SOT-223
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 6704 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.16 грн |
| 13+ | 25.58 грн |
| 100+ | 16.27 грн |
| 500+ | 11.49 грн |
| SM15T12CA |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 10.2VWM 21.7VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 461A (8/20µs)
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 21.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 10.2VWM 21.7VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 461A (8/20µs)
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 21.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3318 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.57 грн |
| 10+ | 51.95 грн |
| 100+ | 37.76 грн |
| 500+ | 28.44 грн |
| 1000+ | 27.34 грн |




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