Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (161826) > Сторінка 2696 з 2698
| Фото | Назва | Виробник | Інформація |
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STPS140ZY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Leakage current: 5mA Max. forward impulse current: 5.5A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STPS140AFN | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA flat Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.65V Leakage current: 2mA Max. forward impulse current: 60A Kind of package: reel; tape Max. load current: 7A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STPS140AY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.65V Leakage current: 2mA Max. forward impulse current: 60A Kind of package: reel; tape Application: automotive industry Max. load current: 7A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STPS140UY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.65V Leakage current: 2mA Max. forward impulse current: 60A Kind of package: reel; tape Application: automotive industry Max. load current: 7A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBTA42 | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSH22IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 25MHz; Ch: 2; 3÷30VDC; SO8; 3.5mV Type of integrated circuit: operational amplifier Bandwidth: 25MHz Number of channels: 2 Mounting: SMT Voltage supply range: 3...30V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 15V/μs Input offset voltage: 3.5mV Kind of package: reel; tape |
на замовлення 655 шт: термін постачання 21-30 дні (днів) |
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STPS60SM200CW | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247; Ufmax: 0.64V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 0.64V Max. forward impulse current: 0.5kA Kind of package: tube |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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M48T37V-10MH1F | STMicroelectronics |
Category: RTC circuitsDescription: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM Mounting: SMD Case: BSSOP44 Trade name: TIMEKEEPER® Date format: YY-MM-DD-dd Operating voltage: 3...3.6V Memory: 256kb SRAM Kind of integrated circuit: timer/calendar Clock format: HH:MM:SS (24h) Kind of memory: NV SRAM Interface: parallel Type of integrated circuit: RTC circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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M48T35AV-10MH1F | STMicroelectronics |
Category: RTC circuitsDescription: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM Mounting: SMD Operating voltage: 3...3.6V Type of integrated circuit: RTC circuit Case: SOH28 Trade name: TIMEKEEPER® Kind of integrated circuit: timer/calendar Date format: YY-MM-DD-dd Memory: 256kb SRAM Clock format: HH:MM:SS (24h) Kind of memory: NV SRAM Interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MLPF-WB-02D3 | STMicroelectronics |
Category: Filters - integrated circuitsDescription: MLPF-WB-02D3 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BTB08-600BWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 50mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 50mA Mounting: THT Kind of package: tube Technology: Snubberless™ |
на замовлення 411 шт: термін постачання 21-30 дні (днів) |
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BTB08-800TWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 5mA; logic level Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 5mA Mounting: THT Kind of package: tube Features of semiconductor devices: logic level |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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BTB08-600TWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 5mA; logic level Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 5mA Mounting: THT Kind of package: tube Features of semiconductor devices: logic level |
на замовлення 246 шт: термін постачання 21-30 дні (днів) |
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BTB08-600CWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 35mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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BTB08-600SRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 10mA; logic level Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10mA Mounting: THT Kind of package: tube Features of semiconductor devices: logic level |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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BTB08-600SWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 10mA; logic level Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10mA Mounting: THT Kind of package: tube Features of semiconductor devices: logic level |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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BTB08-600BRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 50mA Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTB08-600CRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 25mA Mounting: THT Kind of package: tube Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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T3050H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™ Case: TO220AB Features of semiconductor devices: high temperature Kind of package: tube Mounting: THT Technology: Snubberless™ Type of thyristor: triac Gate current: 50mA Max. load current: 30A Max. forward impulse current: 284A Max. off-state voltage: 0.6kV |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
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| T3050H-6I | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A Case: TO220ABIns Features of semiconductor devices: high temperature Kind of package: tube Mounting: THT Type of thyristor: triac Gate current: 50mA Max. load current: 30A Max. forward impulse current: 284A Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T3050H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature Case: D2PAK Features of semiconductor devices: high temperature Kind of package: tube Mounting: SMD Type of thyristor: triac Gate current: 50mA Max. load current: 30A Max. forward impulse current: 284A Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T3050H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature Case: D2PAK Features of semiconductor devices: high temperature Kind of package: reel; tape Mounting: SMD Type of thyristor: triac Gate current: 50mA Max. load current: 30A Max. forward impulse current: 284A Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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P6KE18CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 18V; 24A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.3V Breakdown voltage: 18V Max. forward impulse current: 24A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
на замовлення 533 шт: термін постачання 21-30 дні (днів) |
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| STB80NF55-06T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 300W Case: D2PAK; TO263 On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 189nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STTH5R06B | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 5A; 40ns; DPAK; Ufmax: 1.4V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 40ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK Max. forward voltage: 1.4V Max. load current: 10A Max. forward impulse current: 50A Kind of package: tube |
на замовлення 402 шт: термін постачання 21-30 дні (днів) |
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| STPS20120CB-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 120V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 120V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 1.02V Max. load current: 30A Leakage current: 5mA Max. forward impulse current: 150A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F732RET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP64; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 50 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: CAN; I2C x3; QUAD SPI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F7 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STTH806TTI | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AB; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: double series Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220AB Max. forward voltage: 2.6V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 30ns |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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STTH806DTI | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 180A; TO220ACIns; 13ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: TO220ACIns Max. forward voltage: 2.24V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 13ns Max. load current: 14A |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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STTH806G-TR | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.1V; Ifsm: 90A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 90A Case: D2PAK Max. forward voltage: 1.1V Reverse recovery time: 35ns |
на замовлення 407 шт: термін постачання 21-30 дні (днів) |
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| STTH806DIRG | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 90A; TO220ACIns; 55ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 90A Case: TO220ACIns Max. forward voltage: 1.85V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 55ns Leakage current: 0.2mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP5NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.16A Pulsed drain current: 20A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
на замовлення 138 шт: термін постачання 21-30 дні (днів) |
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STP6NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.8A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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L78M09CDT-TR | STMicroelectronics |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; L78M; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 9V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: L78M Kind of package: reel; tape Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 11.5...24V |
на замовлення 5147 шт: термін постачання 21-30 дні (днів) |
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L78M09ABDT-TR | STMicroelectronics |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; L78M; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 9V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: L78M Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 11.5...24V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LD1117ADT-TR | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷3.3V; 1A; DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...3.3V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: LD1117A Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 0...15V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5KE150A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 150V; 7.2A; unidirectional; DO201; Ammo Pack Type of diode: TVS Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 7.2A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 3761 шт: термін постачання 21-30 дні (днів) |
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SMA6J12CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 14V; 31A; bidirectional; SMA; reel,tape; SMA6J Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMA6J Max. forward impulse current: 31A |
на замовлення 5925 шт: термін постачання 21-30 дні (днів) |
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| STP23NM50N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STW10NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 156W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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| STB10NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 115W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 36A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TN3015H-6T | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube Features of semiconductor devices: high temperature Mounting: THT Type of thyristor: thyristor Gate current: 15mA Load current: 19A Max. load current: 30A Max. off-state voltage: 0.6kV Max. forward impulse current: 270A Case: TO220AB Kind of package: tube |
на замовлення 115 шт: термін постачання 21-30 дні (днів) |
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TN3015H-6G | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube Features of semiconductor devices: high temperature Mounting: SMD Type of thyristor: thyristor Gate current: 15mA Load current: 19A Max. load current: 30A Max. off-state voltage: 0.6kV Max. forward impulse current: 270A Case: D2PAK Kind of package: tube |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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TN3015H-6I | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220ABIns; THT; tube Features of semiconductor devices: high temperature Mounting: THT Type of thyristor: thyristor Gate current: 15mA Load current: 19A Max. load current: 30A Max. off-state voltage: 0.6kV Max. forward impulse current: 270A Case: TO220ABIns Kind of package: tube |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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STP12N50M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 500V; 7A; Idm: 40A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 85W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 15nC On-state resistance: 0.38Ω Drain current: 7A Pulsed drain current: 40A Gate-source voltage: ±25V Drain-source voltage: 500V Kind of channel: enhancement Technology: MDmesh™ M2 |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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| STPST15H100SBYTR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 100V; 15A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 100V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.74V Leakage current: 28µA Max. forward impulse current: 230A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G031C8U6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 44 Case: UFQFPN48 Supply voltage: 1.7...3.6V DC Interface: I2C x2; LPUART; SPI x2; USART x2 Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog Memory: 8kB SRAM; 64kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 16bit timers: 7 Number of 32bit timers: 1 Family: STM32G0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSC1031IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA Type of integrated circuit: instrumentation amplifier Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Kind of package: reel; tape Input bias current: 15µA Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSC103IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA Type of integrated circuit: instrumentation amplifier Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Kind of package: reel; tape Input bias current: 15µA Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TSC103IPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape Type of integrated circuit: instrumentation amplifier Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: TSSOP8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Kind of package: reel; tape Input bias current: 15µA Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TSC1031IPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape Type of integrated circuit: instrumentation amplifier Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: TSSOP8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Kind of package: reel; tape Input bias current: 15µA Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSC1031IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA Type of integrated circuit: instrumentation amplifier Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Kind of package: reel; tape Input bias current: 15µA Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TSC1031IYPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape Type of integrated circuit: instrumentation amplifier Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: TSSOP8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Kind of package: reel; tape Input bias current: 15µA Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSC103IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA Type of integrated circuit: instrumentation amplifier Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Kind of package: reel; tape Input bias current: 15µA Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TSC103IYPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape Type of integrated circuit: instrumentation amplifier Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: TSSOP8 Operating temperature: -40...125°C Slew rate: 0.6V/μs Kind of package: reel; tape Input bias current: 15µA Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
STGF3NC120HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 3A Power dissipation: 25W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 24nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TS3021ILT | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; fast; Cmp: 1; 1.8÷5V; SMT; SOT23-5; reel,tape; 100nA Type of integrated circuit: comparator Case: SOT23-5 Kind of comparator: fast Mounting: SMT Kind of output: push-pull Kind of package: reel; tape Operating temperature: -40...125°C Input offset current: 100nA Input offset voltage: 7mV Number of comparators: 1 Operating voltage: 1.8...5V |
на замовлення 15692 шт: термін постачання 21-30 дні (днів) |
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TS3011ILT | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; fast; Cmp: 1; 2.2÷5V; SMT; SOT23-5; reel,tape; 100pA Type of integrated circuit: comparator Case: SOT23-5 Kind of comparator: fast Mounting: SMT Kind of output: push-pull Kind of package: reel; tape Operating temperature: -40...125°C Input offset current: 0.1nA Input offset voltage: 9mV Number of comparators: 1 Operating voltage: 2.2...5V |
на замовлення 2489 шт: термін постачання 21-30 дні (днів) |
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TS3022IDT | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; fast; Cmp: 2; 1.8÷5V; SMT; SO8; reel,tape; 100nA Type of integrated circuit: comparator Case: SO8 Kind of comparator: fast Mounting: SMT Kind of output: push-pull Kind of package: reel; tape Operating temperature: -40...125°C Input offset current: 100nA Input offset voltage: 7mV Number of comparators: 2 Operating voltage: 1.8...5V |
на замовлення 2450 шт: термін постачання 21-30 дні (днів) |
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BTA26-800BWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 25A; TOP3; Igt: 50mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TOP3 Gate current: 50mA Technology: Snubberless™ Mounting: THT Kind of package: tube |
на замовлення 241 шт: термін постачання 21-30 дні (днів) |
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| STPS140ZY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 5mA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 5mA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| STPS140AFN |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Leakage current: 2mA
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Leakage current: 2mA
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 7A
товару немає в наявності
В кошику
од. на суму грн.
| STPS140AY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Leakage current: 2mA
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Leakage current: 2mA
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 7A
товару немає в наявності
В кошику
од. на суму грн.
| STPS140UY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Leakage current: 2mA
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Leakage current: 2mA
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 7A
товару немає в наявності
В кошику
од. на суму грн.
| MMBTA42 |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TSH22IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 25MHz; Ch: 2; 3÷30VDC; SO8; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 25MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 15V/μs
Input offset voltage: 3.5mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 25MHz; Ch: 2; 3÷30VDC; SO8; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 25MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 15V/μs
Input offset voltage: 3.5mV
Kind of package: reel; tape
на замовлення 655 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.96 грн |
| 10+ | 85.89 грн |
| 25+ | 77.63 грн |
| 100+ | 66.07 грн |
| 250+ | 61.12 грн |
| 500+ | 57.81 грн |
| STPS60SM200CW |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.64V
Max. forward impulse current: 0.5kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.64V
Max. forward impulse current: 0.5kA
Kind of package: tube
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 316.63 грн |
| 30+ | 222.16 грн |
| M48T37V-10MH1F |
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Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Mounting: SMD
Case: BSSOP44
Trade name: TIMEKEEPER®
Date format: YY-MM-DD-dd
Operating voltage: 3...3.6V
Memory: 256kb SRAM
Kind of integrated circuit: timer/calendar
Clock format: HH:MM:SS (24h)
Kind of memory: NV SRAM
Interface: parallel
Type of integrated circuit: RTC circuit
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Mounting: SMD
Case: BSSOP44
Trade name: TIMEKEEPER®
Date format: YY-MM-DD-dd
Operating voltage: 3...3.6V
Memory: 256kb SRAM
Kind of integrated circuit: timer/calendar
Clock format: HH:MM:SS (24h)
Kind of memory: NV SRAM
Interface: parallel
Type of integrated circuit: RTC circuit
товару немає в наявності
В кошику
од. на суму грн.
| M48T35AV-10MH1F |
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Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Mounting: SMD
Operating voltage: 3...3.6V
Type of integrated circuit: RTC circuit
Case: SOH28
Trade name: TIMEKEEPER®
Kind of integrated circuit: timer/calendar
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Clock format: HH:MM:SS (24h)
Kind of memory: NV SRAM
Interface: parallel
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Mounting: SMD
Operating voltage: 3...3.6V
Type of integrated circuit: RTC circuit
Case: SOH28
Trade name: TIMEKEEPER®
Kind of integrated circuit: timer/calendar
Date format: YY-MM-DD-dd
Memory: 256kb SRAM
Clock format: HH:MM:SS (24h)
Kind of memory: NV SRAM
Interface: parallel
товару немає в наявності
В кошику
од. на суму грн.
| MLPF-WB-02D3 |
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на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 13.16 грн |
| BTB08-600BWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
на замовлення 411 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.61 грн |
| 15+ | 28.99 грн |
| 50+ | 25.60 грн |
| 250+ | 23.21 грн |
| 300+ | 22.30 грн |
| BTB08-800TWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 5mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 5mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.27 грн |
| 10+ | 55.58 грн |
| 25+ | 48.56 грн |
| 50+ | 43.44 грн |
| BTB08-600TWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
на замовлення 246 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.14 грн |
| 50+ | 36.26 грн |
| 100+ | 32.13 грн |
| BTB08-600CWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 444.71 грн |
| BTB08-600SRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.60 грн |
| 10+ | 43.44 грн |
| 50+ | 36.09 грн |
| BTB08-600SWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.92 грн |
| 10+ | 41.79 грн |
| BTB08-600BRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTB08-600CRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
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| T3050H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™
Case: TO220AB
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: THT
Technology: Snubberless™
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™
Case: TO220AB
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: THT
Technology: Snubberless™
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
на замовлення 191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.58 грн |
| 10+ | 98.28 грн |
| 25+ | 95.80 грн |
| T3050H-6I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A
Case: TO220ABIns
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A
Case: TO220ABIns
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
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| T3050H-6G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Case: D2PAK
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Case: D2PAK
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
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| T3050H-6G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Case: D2PAK
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Case: D2PAK
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
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| P6KE18CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 24A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.3V
Breakdown voltage: 18V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 24A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.3V
Breakdown voltage: 18V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
на замовлення 533 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.95 грн |
| 23+ | 18.42 грн |
| 100+ | 13.79 грн |
| 500+ | 10.98 грн |
| STB80NF55-06T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 189nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 189nC
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| STTH5R06B |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 40ns; DPAK; Ufmax: 1.4V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward voltage: 1.4V
Max. load current: 10A
Max. forward impulse current: 50A
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 40ns; DPAK; Ufmax: 1.4V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward voltage: 1.4V
Max. load current: 10A
Max. forward impulse current: 50A
Kind of package: tube
на замовлення 402 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.68 грн |
| 26+ | 16.10 грн |
| STPS20120CB-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 120V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.02V
Max. load current: 30A
Leakage current: 5mA
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 120V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.02V
Max. load current: 30A
Leakage current: 5mA
Max. forward impulse current: 150A
Kind of package: reel; tape
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| STM32F732RET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN; I2C x3; QUAD SPI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F7
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN; I2C x3; QUAD SPI; SAI x 2; SDMMC; SPI x3; UART x2; USART x4; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F7
Kind of package: in-tray
Kind of core: 32-bit
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| STTH806TTI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AB
Max. forward voltage: 2.6V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AB
Max. forward voltage: 2.6V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 30ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 113.15 грн |
| 10+ | 100.76 грн |
| STTH806DTI | ![]() |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 180A; TO220ACIns; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220ACIns
Max. forward voltage: 2.24V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
Max. load current: 14A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 180A; TO220ACIns; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220ACIns
Max. forward voltage: 2.24V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
Max. load current: 14A
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 128.08 грн |
| 10+ | 99.11 грн |
| 25+ | 93.32 грн |
| STTH806G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.1V; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 90A
Case: D2PAK
Max. forward voltage: 1.1V
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; D2PAK; Ufmax: 1.1V; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 90A
Case: D2PAK
Max. forward voltage: 1.1V
Reverse recovery time: 35ns
на замовлення 407 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.82 грн |
| 10+ | 49.88 грн |
| 100+ | 39.23 грн |
| STTH806DIRG |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 90A; TO220ACIns; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO220ACIns
Max. forward voltage: 1.85V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 55ns
Leakage current: 0.2mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 90A; TO220ACIns; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO220ACIns
Max. forward voltage: 1.85V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 55ns
Leakage current: 0.2mA
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| STP5NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 138 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.48 грн |
| 10+ | 51.54 грн |
| 50+ | 45.42 грн |
| 100+ | 43.44 грн |
| STP6NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 100.50 грн |
| 10+ | 80.94 грн |
| 25+ | 67.72 грн |
| 50+ | 56.99 грн |
| 100+ | 50.38 грн |
| L78M09CDT-TR |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; L78M; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 9V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...24V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; L78M; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 9V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...24V
на замовлення 5147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.13 грн |
| 20+ | 21.72 грн |
| 25+ | 19.00 грн |
| 50+ | 17.26 грн |
| 100+ | 16.02 грн |
| 250+ | 14.62 грн |
| 500+ | 13.79 грн |
| 1000+ | 13.21 грн |
| 2500+ | 12.55 грн |
| L78M09ABDT-TR |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; L78M; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 9V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 11.5...24V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; L78M; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 9V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: L78M
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 11.5...24V
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| LD1117ADT-TR |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷3.3V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: LD1117A
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 0...15V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷3.3V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: LD1117A
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 0...15V
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| 1.5KE150A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 3761 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.79 грн |
| 21+ | 20.07 грн |
| 50+ | 17.84 грн |
| 100+ | 16.85 грн |
| 250+ | 15.61 грн |
| 600+ | 14.37 грн |
| 1200+ | 14.12 грн |
| SMA6J12CA-TR | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14V; 31A; bidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J
Max. forward impulse current: 31A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14V; 31A; bidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA6J
Max. forward impulse current: 31A
на замовлення 5925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.90 грн |
| 2500+ | 14.45 грн |
| 5000+ | 13.38 грн |
| STP23NM50N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| STW10NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 156W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 156W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 307.74 грн |
| 10+ | 151.96 грн |
| STB10NK60ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 36A
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| TN3015H-6T |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube
Features of semiconductor devices: high temperature
Mounting: THT
Type of thyristor: thyristor
Gate current: 15mA
Load current: 19A
Max. load current: 30A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 270A
Case: TO220AB
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube
Features of semiconductor devices: high temperature
Mounting: THT
Type of thyristor: thyristor
Gate current: 15mA
Load current: 19A
Max. load current: 30A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 270A
Case: TO220AB
Kind of package: tube
на замовлення 115 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.20 грн |
| 10+ | 80.11 грн |
| 20+ | 71.03 грн |
| 50+ | 58.64 грн |
| 100+ | 50.38 грн |
| TN3015H-6G |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube
Features of semiconductor devices: high temperature
Mounting: SMD
Type of thyristor: thyristor
Gate current: 15mA
Load current: 19A
Max. load current: 30A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 270A
Case: D2PAK
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube
Features of semiconductor devices: high temperature
Mounting: SMD
Type of thyristor: thyristor
Gate current: 15mA
Load current: 19A
Max. load current: 30A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 270A
Case: D2PAK
Kind of package: tube
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.62 грн |
| 5+ | 88.37 грн |
| 10+ | 78.46 грн |
| 25+ | 66.07 грн |
| TN3015H-6I |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220ABIns; THT; tube
Features of semiconductor devices: high temperature
Mounting: THT
Type of thyristor: thyristor
Gate current: 15mA
Load current: 19A
Max. load current: 30A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 270A
Case: TO220ABIns
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220ABIns; THT; tube
Features of semiconductor devices: high temperature
Mounting: THT
Type of thyristor: thyristor
Gate current: 15mA
Load current: 19A
Max. load current: 30A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 270A
Case: TO220ABIns
Kind of package: tube
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.45 грн |
| 5+ | 100.76 грн |
| 10+ | 62.77 грн |
| 50+ | 56.16 грн |
| STP12N50M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 500V; 7A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 0.38Ω
Drain current: 7A
Pulsed drain current: 40A
Gate-source voltage: ±25V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: MDmesh™ M2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 500V; 7A; Idm: 40A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 0.38Ω
Drain current: 7A
Pulsed drain current: 40A
Gate-source voltage: ±25V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: MDmesh™ M2
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.64 грн |
| 10+ | 60.29 грн |
| STPST15H100SBYTR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Leakage current: 28µA
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Leakage current: 28µA
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
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| STM32G031C8U6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; LPUART; SPI x2; USART x2
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: I2C x2; LPUART; SPI x2; USART x2
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
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| TSC1031IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Kind of integrated circuit: current sense
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| TSC103IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Kind of integrated circuit: current sense
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| TSC103IPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Kind of integrated circuit: current sense
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| TSC1031IPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Kind of integrated circuit: current sense
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| TSC1031IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Application: automotive industry
Kind of integrated circuit: current sense
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| TSC1031IYPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Application: automotive industry
Kind of integrated circuit: current sense
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| TSC103IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; SO8; reel,tape; 15uA
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Application: automotive industry
Kind of integrated circuit: current sense
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| TSC103IYPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 2.7÷5.5VDC; TSSOP8; reel,tape
Type of integrated circuit: instrumentation amplifier
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Slew rate: 0.6V/μs
Kind of package: reel; tape
Input bias current: 15µA
Application: automotive industry
Kind of integrated circuit: current sense
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| STGF3NC120HD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| TS3021ILT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 1; 1.8÷5V; SMT; SOT23-5; reel,tape; 100nA
Type of integrated circuit: comparator
Case: SOT23-5
Kind of comparator: fast
Mounting: SMT
Kind of output: push-pull
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 100nA
Input offset voltage: 7mV
Number of comparators: 1
Operating voltage: 1.8...5V
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 1; 1.8÷5V; SMT; SOT23-5; reel,tape; 100nA
Type of integrated circuit: comparator
Case: SOT23-5
Kind of comparator: fast
Mounting: SMT
Kind of output: push-pull
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 100nA
Input offset voltage: 7mV
Number of comparators: 1
Operating voltage: 1.8...5V
на замовлення 15692 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.59 грн |
| 10+ | 43.44 грн |
| 50+ | 41.54 грн |
| 100+ | 41.29 грн |
| TS3011ILT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 1; 2.2÷5V; SMT; SOT23-5; reel,tape; 100pA
Type of integrated circuit: comparator
Case: SOT23-5
Kind of comparator: fast
Mounting: SMT
Kind of output: push-pull
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input offset voltage: 9mV
Number of comparators: 1
Operating voltage: 2.2...5V
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 1; 2.2÷5V; SMT; SOT23-5; reel,tape; 100pA
Type of integrated circuit: comparator
Case: SOT23-5
Kind of comparator: fast
Mounting: SMT
Kind of output: push-pull
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input offset voltage: 9mV
Number of comparators: 1
Operating voltage: 2.2...5V
на замовлення 2489 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.73 грн |
| 10+ | 81.76 грн |
| 25+ | 72.68 грн |
| 50+ | 71.85 грн |
| TS3022IDT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 1.8÷5V; SMT; SO8; reel,tape; 100nA
Type of integrated circuit: comparator
Case: SO8
Kind of comparator: fast
Mounting: SMT
Kind of output: push-pull
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 100nA
Input offset voltage: 7mV
Number of comparators: 2
Operating voltage: 1.8...5V
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 1.8÷5V; SMT; SO8; reel,tape; 100nA
Type of integrated circuit: comparator
Case: SO8
Kind of comparator: fast
Mounting: SMT
Kind of output: push-pull
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 100nA
Input offset voltage: 7mV
Number of comparators: 2
Operating voltage: 1.8...5V
на замовлення 2450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.62 грн |
| 5+ | 90.02 грн |
| 10+ | 83.41 грн |
| 25+ | 77.63 грн |
| BTA26-800BWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 25A; TOP3; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TOP3
Gate current: 50mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TOP3; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TOP3
Gate current: 50mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
на замовлення 241 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 270.38 грн |
| 3+ | 223.81 грн |
| 5+ | 203.99 грн |
| 10+ | 175.09 грн |
| 20+ | 147.83 грн |
| 30+ | 134.62 грн |
| 60+ | 117.28 грн |
| 120+ | 112.32 грн |
































