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SM6T7V5CA SM6T7V5CA STMicroelectronics SM6T-st.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.5V; 53A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)
10+43.63 грн
15+26.91 грн
50+22.78 грн
100+18.58 грн
149+6.19 грн
408+5.81 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SM6T200A SM6T200A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 659 шт:
термін постачання 21-30 дні (днів)
10+41.99 грн
15+26.45 грн
50+22.71 грн
100+18.04 грн
102+9.02 грн
280+8.49 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SM6T24CA SM6T24CA STMicroelectronics SM6T.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2483 шт:
термін постачання 21-30 дні (днів)
17+25.52 грн
25+15.90 грн
50+13.00 грн
100+11.77 грн
144+6.27 грн
396+5.89 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SM6T150A SM6T150A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2459 шт:
термін постачання 21-30 дні (днів)
9+46.10 грн
13+30.58 грн
50+24.31 грн
100+9.17 грн
274+8.72 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SM6T24A SM6T24A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1185 шт:
термін постачання 21-30 дні (днів)
14+31.29 грн
20+19.42 грн
50+16.67 грн
100+13.15 грн
158+5.81 грн
434+5.50 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BZW50-33 BZW50-33 STMicroelectronics bzw50.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 36.6V; 85A; unidirectional; R6; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)
3+185.24 грн
10+97.85 грн
26+92.50 грн
1000+88.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STW15NK90Z STW15NK90Z STMicroelectronics STW15NK90Z-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
1+420.70 грн
4+225.52 грн
11+212.53 грн
В кошику  од. на суму  грн.
STM6821LWY6F STMicroelectronics stm6321.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
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STM6821MWY6F STMicroelectronics stm6321.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.39V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
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STM6821RWY6F STMicroelectronics stm6321.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
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MJB44H11T4-A STMicroelectronics mjb44h11t4-a.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BZW50-68B BZW50-68B STMicroelectronics bzw50.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 75.6V; 41A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: bidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
2+209.12 грн
3+175.83 грн
8+115.44 грн
22+109.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-180 BZW50-180 STMicroelectronics BZW50_ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 200V; 16A; unidirectional; R6; Ammo Pack
Max. off-state voltage: 180V
Max. forward impulse current: 16A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 200V
Leakage current: 5µA
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
3+161.31 грн
9+110.09 грн
23+104.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BZW50-56B BZW50-56B STMicroelectronics BZW50_ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 99.6V; 50A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: bidirectional
Max. forward impulse current: 50A
Breakdown voltage: 99.6V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 388 шт:
термін постачання 21-30 дні (днів)
2+233.82 грн
3+196.47 грн
8+129.20 грн
20+122.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-39B BZW50-39B STMicroelectronics bzw50.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 43.3V; 72A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: bidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
2+222.29 грн
3+186.54 грн
8+123.08 грн
21+116.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-39 BZW50-39 STMicroelectronics bzw50.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 43.3V; 72A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: unidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 279 шт:
термін постачання 21-30 дні (днів)
3+143.72 грн
10+95.56 грн
27+90.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BZW50-33BRL BZW50-33BRL STMicroelectronics BZW50_ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36.6V; 85A; bidirectional; R6; 5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
на замовлення 827 шт:
термін постачання 21-30 дні (днів)
3+179.48 грн
5+149.84 грн
8+116.20 грн
22+110.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BZW50-82B BZW50-82B STMicroelectronics bzw50.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 91V; 34A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: bidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
2+214.88 грн
3+181.18 грн
8+119.26 грн
10+118.50 грн
22+112.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-47B BZW50-47B STMicroelectronics bzw50.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 52V; 60.1A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 47V
Semiconductor structure: bidirectional
Max. forward impulse current: 60.1A
Breakdown voltage: 52V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
2+222.29 грн
3+186.54 грн
8+123.08 грн
21+116.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-100B BZW50-100B STMicroelectronics bzw50.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 111V; 28A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 100V
Semiconductor structure: bidirectional
Max. forward impulse current: 28A
Breakdown voltage: 111V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
2+218.17 грн
3+183.48 грн
8+120.79 грн
21+113.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-68 BZW50-68 STMicroelectronics bzw50.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 75.6V; 41A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-56 BZW50-56 STMicroelectronics bzw50.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 62.2V; 50A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: unidirectional
Max. forward impulse current: 50A
Breakdown voltage: 62.2V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
3+167.13 грн
8+119.26 грн
10+118.50 грн
22+112.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BZW50-120B BZW50-120B STMicroelectronics BZW50_ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 23A
Breakdown voltage: 133V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-18 BZW50-18 STMicroelectronics bzw50.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape
Max. off-state voltage: 18V
Max. forward impulse current: 155A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 20V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
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BZW50-22 BZW50-22 STMicroelectronics bzw50.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-22B BZW50-22B STMicroelectronics bzw50.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-12B BZW50-12B STMicroelectronics BZW50_ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 227A
Breakdown voltage: 13.3V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-82 BZW50-82 STMicroelectronics BZW50_ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: unidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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STM32H755IIT6 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755BIT3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Number of comparators: 2
Family: STM32H7
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STM32H755BIT6 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK6 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIT3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH6 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755ZIT3 STMicroelectronics stm32h755bi.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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SMCJ5.0CA-TR SMCJ5.0CA-TR STMicroelectronics SMCJ33CA-TR.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
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BTB08-600CRG STMicroelectronics en.CD00002266.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
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STB7NK80ZT4 STB7NK80ZT4 STMicroelectronics STB7NK80Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 557 шт:
термін постачання 21-30 дні (днів)
3+203.35 грн
10+146.78 грн
14+68.04 грн
37+64.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
M95M01-RMN6TP M95M01-RMN6TP STMicroelectronics M95M01-RMN6TP.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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VND5050AJTR-E VND5050AJTR-E STMicroelectronics vnd5050aj-e.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
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STH30N65DM6-7AG STMicroelectronics sth30n65dm6-7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Mounting: SMD
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 18A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 223W
Polarisation: unipolar
Gate charge: 46nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 112A
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STGW35HF60WD STGW35HF60WD STMicroelectronics STGW35HF60WD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 35A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STM32F103T6U7A STMicroelectronics en.CD00210843.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 10kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32F1
Kind of package: in-tray
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STM32F103TBU6TR STMicroelectronics stm32f103cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
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STM1810LWX7F STMicroelectronics stm1810.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.62V
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SCTWA30N120 SCTWA30N120 STMicroelectronics sctwa30n120.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1947.92 грн
В кошику  од. на суму  грн.
TN3015H-6G TN3015H-6G STMicroelectronics tn3015h-6g.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
3+137.49 грн
10+88.68 грн
16+58.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TN3015H-6T TN3015H-6T STMicroelectronics tn3015h-6t.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220AB
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
6+74.92 грн
10+63.45 грн
19+48.16 грн
52+45.87 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TIP121 TIP121 STMicroelectronics TIP121.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)
8+53.51 грн
11+35.40 грн
25+31.73 грн
42+21.79 грн
50+21.71 грн
113+20.56 грн
1000+19.80 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TN1215-800H TN1215-800H STMicroelectronics tn1215.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 8A; Igt: 15mA; IPAK; THT; tube; Ifsm: 110A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
4+123.49 грн
20+45.26 грн
55+42.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TN815-800B-TR STMicroelectronics TS820.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 200mA; DPAK; SMD; reel,tape
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 200mA
Max. forward impulse current: 70A
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STM32F302VBT6TR STM32F302VBT6TR STMicroelectronics stm32f302cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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VN800PSTR-E VN800PSTR-E STMicroelectronics VN800PS-E.pdf Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 700mA; SO8; 5.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: SO8
Supply voltage: 5.5...36V
Kind of package: reel; tape
On-state resistance: 0.27Ω
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)
3+139.96 грн
11+84.86 грн
29+80.27 грн
500+77.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
M41T11MH6F STMicroelectronics m41t11.pdf Category: RTC circuits
Description: IC: RTC circuit; I2C; NV RAM; SOP28; 2÷5.5V; 56B
Type of integrated circuit: RTC circuit
Interface: I2C
Kind of memory: NV RAM
Mounting: SMD
Case: SOP28
Clock format: HH:MM:SS
Date format: YY-MM-DD-dd
Operating voltage: 2...5.5V
Time keeping current: 0.8µA
Memory capacity: 56B
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STPS1545D STPS1545D STMicroelectronics stps1545.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.5V
Max. off-state voltage: 45V; 45V
Max. load current: 30A; 30A
Max. forward voltage: 0.5V; 0.5V
Load current: 15A; 15A
Semiconductor structure: single diode; single diode
Max. forward impulse current: 220A; 220A
Kind of package: tube; tube
Type of diode: Schottky rectifying; Schottky rectifying
Heatsink thickness: 1.23...1.32mm; 1.23...1.32mm
Mounting: THT; THT
Case: TO220AC; TO220AC
на замовлення 388 шт:
термін постачання 21-30 дні (днів)
8+58.45 грн
9+45.87 грн
11+37.77 грн
27+33.87 грн
50+32.64 грн
73+32.03 грн
250+30.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STWA35N65DM2 STMicroelectronics stwa35n65dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
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STWA63N65DM2 STWA63N65DM2 STMicroelectronics STWA63N65DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STWA65N65DM2AG STMicroelectronics stwa65n65dm2ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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SM6T7V5CA SM6T-st.pdf
SM6T7V5CA
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.5V; 53A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.63 грн
15+26.91 грн
50+22.78 грн
100+18.58 грн
149+6.19 грн
408+5.81 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SM6T200A SM6T.pdf
SM6T200A
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 659 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+41.99 грн
15+26.45 грн
50+22.71 грн
100+18.04 грн
102+9.02 грн
280+8.49 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SM6T24CA SM6T.pdf
SM6T24CA
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2483 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.52 грн
25+15.90 грн
50+13.00 грн
100+11.77 грн
144+6.27 грн
396+5.89 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SM6T150A SM6T.pdf
SM6T150A
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2459 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+46.10 грн
13+30.58 грн
50+24.31 грн
100+9.17 грн
274+8.72 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SM6T24A SM6T.pdf
SM6T24A
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1185 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.29 грн
20+19.42 грн
50+16.67 грн
100+13.15 грн
158+5.81 грн
434+5.50 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BZW50-33 bzw50.pdf
BZW50-33
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 36.6V; 85A; unidirectional; R6; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+185.24 грн
10+97.85 грн
26+92.50 грн
1000+88.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STW15NK90Z description STW15NK90Z-DTE.pdf
STW15NK90Z
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+420.70 грн
4+225.52 грн
11+212.53 грн
В кошику  од. на суму  грн.
STM6821LWY6F stm6321.pdf
Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
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STM6821MWY6F stm6321.pdf
Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.39V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
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STM6821RWY6F stm6321.pdf
Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
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MJB44H11T4-A mjb44h11t4-a.pdf
Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BZW50-68B bzw50.pdf
BZW50-68B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 75.6V; 41A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: bidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+209.12 грн
3+175.83 грн
8+115.44 грн
22+109.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-180 BZW50_ser.pdf
BZW50-180
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 200V; 16A; unidirectional; R6; Ammo Pack
Max. off-state voltage: 180V
Max. forward impulse current: 16A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 200V
Leakage current: 5µA
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+161.31 грн
9+110.09 грн
23+104.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BZW50-56B BZW50_ser.pdf
BZW50-56B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 99.6V; 50A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: bidirectional
Max. forward impulse current: 50A
Breakdown voltage: 99.6V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 388 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+233.82 грн
3+196.47 грн
8+129.20 грн
20+122.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-39B bzw50.pdf
BZW50-39B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 43.3V; 72A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: bidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+222.29 грн
3+186.54 грн
8+123.08 грн
21+116.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-39 bzw50.pdf
BZW50-39
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 43.3V; 72A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: unidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 279 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+143.72 грн
10+95.56 грн
27+90.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BZW50-33BRL BZW50_ser.pdf
BZW50-33BRL
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36.6V; 85A; bidirectional; R6; 5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
на замовлення 827 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+179.48 грн
5+149.84 грн
8+116.20 грн
22+110.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BZW50-82B bzw50.pdf
BZW50-82B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 91V; 34A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: bidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+214.88 грн
3+181.18 грн
8+119.26 грн
10+118.50 грн
22+112.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-47B bzw50.pdf
BZW50-47B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 52V; 60.1A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 47V
Semiconductor structure: bidirectional
Max. forward impulse current: 60.1A
Breakdown voltage: 52V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+222.29 грн
3+186.54 грн
8+123.08 грн
21+116.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-100B bzw50.pdf
BZW50-100B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 111V; 28A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 100V
Semiconductor structure: bidirectional
Max. forward impulse current: 28A
Breakdown voltage: 111V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+218.17 грн
3+183.48 грн
8+120.79 грн
21+113.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZW50-68 bzw50.pdf
BZW50-68
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 75.6V; 41A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-56 bzw50.pdf
BZW50-56
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 62.2V; 50A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: unidirectional
Max. forward impulse current: 50A
Breakdown voltage: 62.2V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+167.13 грн
8+119.26 грн
10+118.50 грн
22+112.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BZW50-120B BZW50_ser.pdf
BZW50-120B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 23A
Breakdown voltage: 133V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-18 bzw50.pdf
BZW50-18
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape
Max. off-state voltage: 18V
Max. forward impulse current: 155A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 20V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
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BZW50-22 bzw50.pdf
BZW50-22
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-22B bzw50.pdf
BZW50-22B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-12B BZW50_ser.pdf
BZW50-12B
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 227A
Breakdown voltage: 13.3V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-82 BZW50_ser.pdf
BZW50-82
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: unidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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STM32H755IIT6 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755BIT3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Number of comparators: 2
Family: STM32H7
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STM32H755BIT6 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK6 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIT3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH6 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755ZIT3 stm32h755bi.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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SMCJ5.0CA-TR description SMCJ33CA-TR.pdf
SMCJ5.0CA-TR
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
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BTB08-600CRG en.CD00002266.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
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STB7NK80ZT4 STB7NK80Z.pdf
STB7NK80ZT4
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 557 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+203.35 грн
10+146.78 грн
14+68.04 грн
37+64.98 грн
Мінімальне замовлення: 3
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M95M01-RMN6TP M95M01-RMN6TP.pdf
M95M01-RMN6TP
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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VND5050AJTR-E vnd5050aj-e.pdf
VND5050AJTR-E
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
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STH30N65DM6-7AG sth30n65dm6-7ag.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Mounting: SMD
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 18A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 223W
Polarisation: unipolar
Gate charge: 46nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 112A
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STGW35HF60WD STGW35HF60WD.pdf
STGW35HF60WD
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 35A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STM32F103T6U7A en.CD00210843.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 10kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32F1
Kind of package: in-tray
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STM32F103TBU6TR stm32f103cb.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
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STM1810LWX7F stm1810.pdf
Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.62V
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SCTWA30N120 sctwa30n120.pdf
SCTWA30N120
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1947.92 грн
В кошику  од. на суму  грн.
TN3015H-6G tn3015h-6g.pdf
TN3015H-6G
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+137.49 грн
10+88.68 грн
16+58.10 грн
Мінімальне замовлення: 3
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TN3015H-6T tn3015h-6t.pdf
TN3015H-6T
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220AB
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.92 грн
10+63.45 грн
19+48.16 грн
52+45.87 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TIP121 TIP121.pdf
TIP121
Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+53.51 грн
11+35.40 грн
25+31.73 грн
42+21.79 грн
50+21.71 грн
113+20.56 грн
1000+19.80 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TN1215-800H tn1215.pdf
TN1215-800H
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 8A; Igt: 15mA; IPAK; THT; tube; Ifsm: 110A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+123.49 грн
20+45.26 грн
55+42.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TN815-800B-TR TS820.pdf
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 200mA; DPAK; SMD; reel,tape
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 200mA
Max. forward impulse current: 70A
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STM32F302VBT6TR stm32f302cb.pdf
STM32F302VBT6TR
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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VN800PSTR-E VN800PS-E.pdf
VN800PSTR-E
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 700mA; SO8; 5.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: SO8
Supply voltage: 5.5...36V
Kind of package: reel; tape
On-state resistance: 0.27Ω
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+139.96 грн
11+84.86 грн
29+80.27 грн
500+77.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
M41T11MH6F m41t11.pdf
Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; I2C; NV RAM; SOP28; 2÷5.5V; 56B
Type of integrated circuit: RTC circuit
Interface: I2C
Kind of memory: NV RAM
Mounting: SMD
Case: SOP28
Clock format: HH:MM:SS
Date format: YY-MM-DD-dd
Operating voltage: 2...5.5V
Time keeping current: 0.8µA
Memory capacity: 56B
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STPS1545D stps1545.pdf
STPS1545D
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.5V
Max. off-state voltage: 45V; 45V
Max. load current: 30A; 30A
Max. forward voltage: 0.5V; 0.5V
Load current: 15A; 15A
Semiconductor structure: single diode; single diode
Max. forward impulse current: 220A; 220A
Kind of package: tube; tube
Type of diode: Schottky rectifying; Schottky rectifying
Heatsink thickness: 1.23...1.32mm; 1.23...1.32mm
Mounting: THT; THT
Case: TO220AC; TO220AC
на замовлення 388 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+58.45 грн
9+45.87 грн
11+37.77 грн
27+33.87 грн
50+32.64 грн
73+32.03 грн
250+30.81 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STWA35N65DM2 stwa35n65dm2.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
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STWA63N65DM2 STWA63N65DM2.pdf
STWA63N65DM2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STWA65N65DM2AG stwa65n65dm2ag.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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