Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170063) > Сторінка 2811 з 2835
Фото | Назва | Виробник | Інформація |
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SM6T7V5CA | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 7.5V; 53A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.4V Breakdown voltage: 7.5V Max. forward impulse current: 53A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape |
на замовлення 2725 шт: термін постачання 21-30 дні (днів) |
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SM6T200A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 659 шт: термін постачання 21-30 дні (днів) |
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SM6T24CA | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 18A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2483 шт: термін постачання 21-30 дні (днів) |
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SM6T150A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2459 шт: термін постачання 21-30 дні (днів) |
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SM6T24A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 18A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1185 шт: термін постачання 21-30 дні (днів) |
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BZW50-33 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 36.6V; 85A; unidirectional; R6; reel,tape Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 36.6V Max. forward impulse current: 85A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 5kW Kind of package: reel; tape |
на замовлення 1123 шт: термін постачання 21-30 дні (днів) |
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STW15NK90Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 350W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 177 шт: термін постачання 21-30 дні (днів) |
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STM6821LWY6F | STMicroelectronics |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Operating temperature: -40...85°C Case: SOT23-5 Supply voltage: 1.2...5.5V DC Type of integrated circuit: supervisor circuit Active logical level: high Kind of RESET output: push-pull Integrated circuit features: manual reset; watchdog Threshold on-voltage: 4.63V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM6821MWY6F | STMicroelectronics |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Operating temperature: -40...85°C Case: SOT23-5 Supply voltage: 1.2...5.5V DC Type of integrated circuit: supervisor circuit Active logical level: high Kind of RESET output: push-pull Integrated circuit features: manual reset; watchdog Threshold on-voltage: 4.39V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM6821RWY6F | STMicroelectronics |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Operating temperature: -40...85°C Case: SOT23-5 Supply voltage: 1.2...5.5V DC Type of integrated circuit: supervisor circuit Active logical level: high Kind of RESET output: push-pull Integrated circuit features: manual reset; watchdog Threshold on-voltage: 2.63V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MJB44H11T4-A | STMicroelectronics |
![]() Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZW50-68B | STMicroelectronics |
![]() Description: Diode: TVS; 75.6V; 41A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 68V Semiconductor structure: bidirectional Max. forward impulse current: 41A Breakdown voltage: 75.6V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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BZW50-180 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 200V; 16A; unidirectional; R6; Ammo Pack Max. off-state voltage: 180V Max. forward impulse current: 16A Case: R6 Semiconductor structure: unidirectional Breakdown voltage: 200V Leakage current: 5µA Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW Mounting: THT |
на замовлення 262 шт: термін постачання 21-30 дні (днів) |
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BZW50-56B | STMicroelectronics |
![]() Description: Diode: TVS; 99.6V; 50A; bidirectional; R6; 5kW; Ammo Pack Case: R6 Max. off-state voltage: 56V Semiconductor structure: bidirectional Max. forward impulse current: 50A Breakdown voltage: 99.6V Leakage current: 5µA Mounting: THT Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW |
на замовлення 388 шт: термін постачання 21-30 дні (днів) |
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BZW50-39B | STMicroelectronics |
![]() Description: Diode: TVS; 43.3V; 72A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 39V Semiconductor structure: bidirectional Max. forward impulse current: 72A Breakdown voltage: 43.3V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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BZW50-39 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 43.3V; 72A; unidirectional; R6; reel,tape Case: R6 Max. off-state voltage: 39V Semiconductor structure: unidirectional Max. forward impulse current: 72A Breakdown voltage: 43.3V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
на замовлення 279 шт: термін постачання 21-30 дні (днів) |
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BZW50-33BRL | STMicroelectronics |
![]() Description: Diode: TVS; 36.6V; 85A; bidirectional; R6; 5kW; reel,tape Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 36.6V Max. forward impulse current: 85A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 5kW Kind of package: reel; tape |
на замовлення 827 шт: термін постачання 21-30 дні (днів) |
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BZW50-82B | STMicroelectronics |
![]() Description: Diode: TVS; 91V; 34A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 82V Semiconductor structure: bidirectional Max. forward impulse current: 34A Breakdown voltage: 91V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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BZW50-47B | STMicroelectronics |
![]() Description: Diode: TVS; 52V; 60.1A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 47V Semiconductor structure: bidirectional Max. forward impulse current: 60.1A Breakdown voltage: 52V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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BZW50-100B | STMicroelectronics |
![]() Description: Diode: TVS; 111V; 28A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 100V Semiconductor structure: bidirectional Max. forward impulse current: 28A Breakdown voltage: 111V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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BZW50-68 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 75.6V; 41A; unidirectional; R6; reel,tape Case: R6 Max. off-state voltage: 68V Semiconductor structure: unidirectional Max. forward impulse current: 41A Breakdown voltage: 75.6V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZW50-56 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 62.2V; 50A; unidirectional; R6; reel,tape Case: R6 Max. off-state voltage: 56V Semiconductor structure: unidirectional Max. forward impulse current: 50A Breakdown voltage: 62.2V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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BZW50-120B | STMicroelectronics |
![]() Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack Case: R6 Max. off-state voltage: 120V Semiconductor structure: bidirectional Max. forward impulse current: 23A Breakdown voltage: 133V Leakage current: 5µA Mounting: THT Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZW50-18 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape Max. off-state voltage: 18V Max. forward impulse current: 155A Case: R6 Semiconductor structure: unidirectional Breakdown voltage: 20V Leakage current: 5µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZW50-22 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape Case: R6 Max. off-state voltage: 22V Semiconductor structure: unidirectional Max. forward impulse current: 127A Breakdown voltage: 24.4V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZW50-22B | STMicroelectronics |
![]() Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 22V Semiconductor structure: bidirectional Max. forward impulse current: 127A Breakdown voltage: 24.4V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZW50-12B | STMicroelectronics |
![]() Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack Case: R6 Max. off-state voltage: 12V Semiconductor structure: bidirectional Max. forward impulse current: 227A Breakdown voltage: 13.3V Leakage current: 5µA Mounting: THT Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZW50-82 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack Case: R6 Max. off-state voltage: 82V Semiconductor structure: unidirectional Max. forward impulse current: 34A Breakdown voltage: 91V Leakage current: 5µA Mounting: THT Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STM32H755IIT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: LQFP176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32H755BIT3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 480MHz Mounting: SMD Number of inputs/outputs: 148 Case: LQFP208 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Number of comparators: 2 Family: STM32H7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32H755BIT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 148 Case: LQFP208 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32H755IIK3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: UFBGA176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32H755IIK6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: UFBGA176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32H755IIT3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: LQFP176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32H755XIH3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 168 Case: TFBGA240 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32H755XIH6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 168 Case: TFBGA240 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32H755ZIT3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 97 Case: LQFP144 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMCJ5.0CA-TR | STMicroelectronics |
![]() ![]() Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.74V Max. forward impulse current: 171A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 2mA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BTB08-600CRG | STMicroelectronics |
![]() Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 25mA Mounting: THT Kind of package: tube Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STB7NK80ZT4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.3A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 557 шт: термін постачання 21-30 дні (днів) |
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M95M01-RMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: SPI Memory organisation: 128kx8bit Operating voltage: 1.8...5.5V Clock frequency: 16MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VND5050AJTR-E | STMicroelectronics |
![]() Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 18A Mounting: SMD Number of channels: 2 Case: PowerSSO12 Supply voltage: 4.5...36V Kind of package: reel; tape On-state resistance: 50mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STH30N65DM6-7AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A Mounting: SMD Case: H2PAK7 Drain-source voltage: 650V Drain current: 18A On-state resistance: 0.115Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 223W Polarisation: unipolar Gate charge: 46nC Technology: MDmesh™ DM6 Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 112A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STGW35HF60WD | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 35A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STM32F103T6U7A | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN32 Supply voltage: 2...3.6V DC Interface: CAN; I2C; SPI; USART x2; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 10kB SRAM; 32kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 10 Number of 16bit timers: 3 Family: STM32F1 Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32F103TBU6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN32 Supply voltage: 2...3.6V DC Interface: CAN; I2C; SPI; USART x2; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 20kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 4 Family: STM32F1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM1810LWX7F | STMicroelectronics |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1.2...5.5V DC Case: SOT23-3 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 4.62V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SCTWA30N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 34A Pulsed drain current: 90A Power dissipation: 270W Case: HIP247™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 105nC Kind of package: tube |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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TN3015H-6G | STMicroelectronics |
![]() Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube Max. off-state voltage: 0.6kV Max. load current: 30A Load current: 19A Gate current: 15mA Max. forward impulse current: 270A Kind of package: tube Features of semiconductor devices: high temperature Type of thyristor: thyristor Mounting: SMD Case: D2PAK |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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TN3015H-6T | STMicroelectronics |
![]() Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube Max. off-state voltage: 0.6kV Max. load current: 30A Load current: 19A Gate current: 15mA Max. forward impulse current: 270A Kind of package: tube Features of semiconductor devices: high temperature Type of thyristor: thyristor Mounting: THT Case: TO220AB |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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TIP121 | STMicroelectronics |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 1002 шт: термін постачання 21-30 дні (днів) |
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TN1215-800H | STMicroelectronics |
![]() Description: Thyristor; 800V; Ifmax: 12A; 8A; Igt: 15mA; IPAK; THT; tube; Ifsm: 110A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 12A Load current: 8A Gate current: 15mA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 110A |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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TN815-800B-TR | STMicroelectronics |
![]() Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 200mA; DPAK; SMD; reel,tape Kind of package: reel; tape Type of thyristor: thyristor Mounting: SMD Case: DPAK Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 200mA Max. forward impulse current: 70A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STM32F302VBT6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 87 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 32kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 4 Number of 12bit D/A converters: 1 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VN800PSTR-E | STMicroelectronics |
![]() Description: IC: power switch; high-side; 700mA; SO8; 5.5÷36V; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Mounting: SMD Number of channels: 1 Operating temperature: -40...150°C Case: SO8 Supply voltage: 5.5...36V Kind of package: reel; tape On-state resistance: 0.27Ω |
на замовлення 1334 шт: термін постачання 21-30 дні (днів) |
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M41T11MH6F | STMicroelectronics |
![]() Description: IC: RTC circuit; I2C; NV RAM; SOP28; 2÷5.5V; 56B Type of integrated circuit: RTC circuit Interface: I2C Kind of memory: NV RAM Mounting: SMD Case: SOP28 Clock format: HH:MM:SS Date format: YY-MM-DD-dd Operating voltage: 2...5.5V Time keeping current: 0.8µA Memory capacity: 56B |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STPS1545D | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.5V Max. off-state voltage: 45V; 45V Max. load current: 30A; 30A Max. forward voltage: 0.5V; 0.5V Load current: 15A; 15A Semiconductor structure: single diode; single diode Max. forward impulse current: 220A; 220A Kind of package: tube; tube Type of diode: Schottky rectifying; Schottky rectifying Heatsink thickness: 1.23...1.32mm; 1.23...1.32mm Mounting: THT; THT Case: TO220AC; TO220AC |
на замовлення 388 шт: термін постачання 21-30 дні (днів) |
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STWA35N65DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STWA63N65DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STWA65N65DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 50mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
SM6T7V5CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.5V; 53A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.5V; 53A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.63 грн |
15+ | 26.91 грн |
50+ | 22.78 грн |
100+ | 18.58 грн |
149+ | 6.19 грн |
408+ | 5.81 грн |
SM6T200A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 659 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.99 грн |
15+ | 26.45 грн |
50+ | 22.71 грн |
100+ | 18.04 грн |
102+ | 9.02 грн |
280+ | 8.49 грн |
SM6T24CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2483 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.52 грн |
25+ | 15.90 грн |
50+ | 13.00 грн |
100+ | 11.77 грн |
144+ | 6.27 грн |
396+ | 5.89 грн |
SM6T150A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2459 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 46.10 грн |
13+ | 30.58 грн |
50+ | 24.31 грн |
100+ | 9.17 грн |
274+ | 8.72 грн |
SM6T24A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1185 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.29 грн |
20+ | 19.42 грн |
50+ | 16.67 грн |
100+ | 13.15 грн |
158+ | 5.81 грн |
434+ | 5.50 грн |
BZW50-33 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 36.6V; 85A; unidirectional; R6; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 36.6V; 85A; unidirectional; R6; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 185.24 грн |
10+ | 97.85 грн |
26+ | 92.50 грн |
1000+ | 88.68 грн |
STW15NK90Z | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 177 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 420.70 грн |
4+ | 225.52 грн |
11+ | 212.53 грн |
STM6821LWY6F |
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Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
STM6821MWY6F |
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Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.39V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.39V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
STM6821RWY6F |
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Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
MJB44H11T4-A |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZW50-68B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 75.6V; 41A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: bidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 75.6V; 41A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: bidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 209.12 грн |
3+ | 175.83 грн |
8+ | 115.44 грн |
22+ | 109.32 грн |
BZW50-180 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 200V; 16A; unidirectional; R6; Ammo Pack
Max. off-state voltage: 180V
Max. forward impulse current: 16A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 200V
Leakage current: 5µA
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 200V; 16A; unidirectional; R6; Ammo Pack
Max. off-state voltage: 180V
Max. forward impulse current: 16A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 200V
Leakage current: 5µA
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
на замовлення 262 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 161.31 грн |
9+ | 110.09 грн |
23+ | 104.73 грн |
BZW50-56B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 99.6V; 50A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: bidirectional
Max. forward impulse current: 50A
Breakdown voltage: 99.6V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 99.6V; 50A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: bidirectional
Max. forward impulse current: 50A
Breakdown voltage: 99.6V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 388 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 233.82 грн |
3+ | 196.47 грн |
8+ | 129.20 грн |
20+ | 122.32 грн |
BZW50-39B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 43.3V; 72A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: bidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 43.3V; 72A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: bidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 222.29 грн |
3+ | 186.54 грн |
8+ | 123.08 грн |
21+ | 116.20 грн |
BZW50-39 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 43.3V; 72A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: unidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 43.3V; 72A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: unidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 279 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 143.72 грн |
10+ | 95.56 грн |
27+ | 90.21 грн |
BZW50-33BRL |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36.6V; 85A; bidirectional; R6; 5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36.6V; 85A; bidirectional; R6; 5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
на замовлення 827 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 179.48 грн |
5+ | 149.84 грн |
8+ | 116.20 грн |
22+ | 110.09 грн |
BZW50-82B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 91V; 34A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: bidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 91V; 34A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: bidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 35 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 214.88 грн |
3+ | 181.18 грн |
8+ | 119.26 грн |
10+ | 118.50 грн |
22+ | 112.38 грн |
BZW50-47B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 52V; 60.1A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 47V
Semiconductor structure: bidirectional
Max. forward impulse current: 60.1A
Breakdown voltage: 52V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 52V; 60.1A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 47V
Semiconductor structure: bidirectional
Max. forward impulse current: 60.1A
Breakdown voltage: 52V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 222.29 грн |
3+ | 186.54 грн |
8+ | 123.08 грн |
21+ | 116.20 грн |
BZW50-100B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 111V; 28A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 100V
Semiconductor structure: bidirectional
Max. forward impulse current: 28A
Breakdown voltage: 111V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 111V; 28A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 100V
Semiconductor structure: bidirectional
Max. forward impulse current: 28A
Breakdown voltage: 111V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 78 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 218.17 грн |
3+ | 183.48 грн |
8+ | 120.79 грн |
21+ | 113.91 грн |
BZW50-68 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 75.6V; 41A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 75.6V; 41A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-56 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 62.2V; 50A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: unidirectional
Max. forward impulse current: 50A
Breakdown voltage: 62.2V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 62.2V; 50A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: unidirectional
Max. forward impulse current: 50A
Breakdown voltage: 62.2V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 167.13 грн |
8+ | 119.26 грн |
10+ | 118.50 грн |
22+ | 112.38 грн |
BZW50-120B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 23A
Breakdown voltage: 133V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 23A
Breakdown voltage: 133V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-18 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape
Max. off-state voltage: 18V
Max. forward impulse current: 155A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 20V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape
Max. off-state voltage: 18V
Max. forward impulse current: 155A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 20V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
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BZW50-22 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-22B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-12B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 227A
Breakdown voltage: 13.3V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 227A
Breakdown voltage: 13.3V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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BZW50-82 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: unidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: unidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
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STM32H755IIT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755BIT3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Number of comparators: 2
Family: STM32H7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Number of comparators: 2
Family: STM32H7
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STM32H755BIT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIK6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755IIT3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755XIH6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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STM32H755ZIT3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
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SMCJ5.0CA-TR | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
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BTB08-600CRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
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STB7NK80ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 557 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 203.35 грн |
10+ | 146.78 грн |
14+ | 68.04 грн |
37+ | 64.98 грн |
M95M01-RMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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VND5050AJTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
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STH30N65DM6-7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Mounting: SMD
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 18A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 223W
Polarisation: unipolar
Gate charge: 46nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 112A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Mounting: SMD
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 18A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 223W
Polarisation: unipolar
Gate charge: 46nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 112A
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STGW35HF60WD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 35A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 35A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STM32F103T6U7A |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 10kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32F1
Kind of package: in-tray
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 10kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32F1
Kind of package: in-tray
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STM32F103TBU6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
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STM1810LWX7F |
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Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.62V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.62V
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SCTWA30N120 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1947.92 грн |
TN3015H-6G |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; D2PAK; SMD; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.49 грн |
10+ | 88.68 грн |
16+ | 58.10 грн |
TN3015H-6T |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220AB
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 30A; 19A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 30A
Load current: 19A
Gate current: 15mA
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220AB
на замовлення 146 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.92 грн |
10+ | 63.45 грн |
19+ | 48.16 грн |
52+ | 45.87 грн |
TIP121 |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 53.51 грн |
11+ | 35.40 грн |
25+ | 31.73 грн |
42+ | 21.79 грн |
50+ | 21.71 грн |
113+ | 20.56 грн |
1000+ | 19.80 грн |
TN1215-800H |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 8A; Igt: 15mA; IPAK; THT; tube; Ifsm: 110A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 8A; Igt: 15mA; IPAK; THT; tube; Ifsm: 110A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
на замовлення 148 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 123.49 грн |
20+ | 45.26 грн |
55+ | 42.73 грн |
TN815-800B-TR |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 200mA; DPAK; SMD; reel,tape
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 200mA
Max. forward impulse current: 70A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 200mA; DPAK; SMD; reel,tape
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 200mA
Max. forward impulse current: 70A
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STM32F302VBT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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VN800PSTR-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 700mA; SO8; 5.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: SO8
Supply voltage: 5.5...36V
Kind of package: reel; tape
On-state resistance: 0.27Ω
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 700mA; SO8; 5.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: SO8
Supply voltage: 5.5...36V
Kind of package: reel; tape
On-state resistance: 0.27Ω
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 139.96 грн |
11+ | 84.86 грн |
29+ | 80.27 грн |
500+ | 77.21 грн |
M41T11MH6F |
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Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; I2C; NV RAM; SOP28; 2÷5.5V; 56B
Type of integrated circuit: RTC circuit
Interface: I2C
Kind of memory: NV RAM
Mounting: SMD
Case: SOP28
Clock format: HH:MM:SS
Date format: YY-MM-DD-dd
Operating voltage: 2...5.5V
Time keeping current: 0.8µA
Memory capacity: 56B
Category: RTC circuits
Description: IC: RTC circuit; I2C; NV RAM; SOP28; 2÷5.5V; 56B
Type of integrated circuit: RTC circuit
Interface: I2C
Kind of memory: NV RAM
Mounting: SMD
Case: SOP28
Clock format: HH:MM:SS
Date format: YY-MM-DD-dd
Operating voltage: 2...5.5V
Time keeping current: 0.8µA
Memory capacity: 56B
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STPS1545D |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.5V
Max. off-state voltage: 45V; 45V
Max. load current: 30A; 30A
Max. forward voltage: 0.5V; 0.5V
Load current: 15A; 15A
Semiconductor structure: single diode; single diode
Max. forward impulse current: 220A; 220A
Kind of package: tube; tube
Type of diode: Schottky rectifying; Schottky rectifying
Heatsink thickness: 1.23...1.32mm; 1.23...1.32mm
Mounting: THT; THT
Case: TO220AC; TO220AC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.5V
Max. off-state voltage: 45V; 45V
Max. load current: 30A; 30A
Max. forward voltage: 0.5V; 0.5V
Load current: 15A; 15A
Semiconductor structure: single diode; single diode
Max. forward impulse current: 220A; 220A
Kind of package: tube; tube
Type of diode: Schottky rectifying; Schottky rectifying
Heatsink thickness: 1.23...1.32mm; 1.23...1.32mm
Mounting: THT; THT
Case: TO220AC; TO220AC
на замовлення 388 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.45 грн |
9+ | 45.87 грн |
11+ | 37.77 грн |
27+ | 33.87 грн |
50+ | 32.64 грн |
73+ | 32.03 грн |
250+ | 30.81 грн |
STWA35N65DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
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STWA63N65DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STWA65N65DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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