Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170345) > Сторінка 2840 з 2840
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SCT040H120G3AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 156A; 300W; H2PAK7 Polarisation: unipolar Mounting: SMD Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 300W Kind of package: reel; tape Version: Automotive Gate charge: 54nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 156A Case: H2PAK7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
SCT040H65G3AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; H2PAK7 Polarisation: unipolar Mounting: SMD Drain-source voltage: 650V Drain current: 30A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 221W Kind of package: reel; tape Gate charge: 39.5nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 160A Case: H2PAK7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
SCT040HU65G3AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; HU3PAK Polarisation: unipolar Mounting: SMD Drain-source voltage: 650V Drain current: 30A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 221W Kind of package: reel; tape Gate charge: 39.5nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 160A Case: HU3PAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
SCT040W120G3AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W; HIP247™ Polarisation: unipolar Mounting: THT Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 312W Kind of package: tube Version: Automotive Gate charge: 56nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 179A Case: HIP247™ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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TIP127 | STMicroelectronics |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 65W |
на замовлення 2107 шт: термін постачання 21-30 дні (днів) |
|
SCT040H120G3AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 156A; 300W; H2PAK7
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Kind of package: reel; tape
Version: Automotive
Gate charge: 54nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 156A
Case: H2PAK7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 156A; 300W; H2PAK7
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Kind of package: reel; tape
Version: Automotive
Gate charge: 54nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 156A
Case: H2PAK7
товару немає в наявності
В кошику
од. на суму грн.
SCT040H65G3AG |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; H2PAK7
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Kind of package: reel; tape
Gate charge: 39.5nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: H2PAK7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; H2PAK7
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Kind of package: reel; tape
Gate charge: 39.5nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: H2PAK7
товару немає в наявності
В кошику
од. на суму грн.
SCT040HU65G3AG |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; HU3PAK
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Kind of package: reel; tape
Gate charge: 39.5nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: HU3PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; HU3PAK
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Kind of package: reel; tape
Gate charge: 39.5nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: HU3PAK
товару немає в наявності
В кошику
од. на суму грн.
SCT040W120G3AG |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W; HIP247™
Polarisation: unipolar
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Kind of package: tube
Version: Automotive
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 179A
Case: HIP247™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W; HIP247™
Polarisation: unipolar
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Kind of package: tube
Version: Automotive
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 179A
Case: HIP247™
товару немає в наявності
В кошику
од. на суму грн.
TIP127 |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 65W
на замовлення 2107 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.19 грн |
47+ | 19.05 грн |
129+ | 17.99 грн |